ATE464653T1 - Auf siloxanen basierende diamine enthaltende unterfüll- und formmassen - Google Patents

Auf siloxanen basierende diamine enthaltende unterfüll- und formmassen

Info

Publication number
ATE464653T1
ATE464653T1 AT04755497T AT04755497T ATE464653T1 AT E464653 T1 ATE464653 T1 AT E464653T1 AT 04755497 T AT04755497 T AT 04755497T AT 04755497 T AT04755497 T AT 04755497T AT E464653 T1 ATE464653 T1 AT E464653T1
Authority
AT
Austria
Prior art keywords
siloxane
molding compounds
containing base
diamines containing
contact points
Prior art date
Application number
AT04755497T
Other languages
English (en)
Inventor
Saikumar Jayaraman
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE464653T1 publication Critical patent/ATE464653T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/42—Polyamides containing atoms other than carbon, hydrogen, oxygen, and nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50—Amines
    • C08G59/504—Amines containing an atom other than nitrogen belonging to the amine group, carbon and hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Silicon Polymers (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
  • Fats And Perfumes (AREA)
  • Food Preservation Except Freezing, Refrigeration, And Drying (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
AT04755497T 2003-06-30 2004-06-16 Auf siloxanen basierende diamine enthaltende unterfüll- und formmassen ATE464653T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/611,618 US7084492B2 (en) 2003-06-30 2003-06-30 Underfill and mold compounds including siloxane-based aromatic diamines
PCT/US2004/019371 WO2005006428A1 (en) 2003-06-30 2004-06-16 Underfill and mold compounds including siloxane-based aromatic diamines

Publications (1)

Publication Number Publication Date
ATE464653T1 true ATE464653T1 (de) 2010-04-15

Family

ID=33541353

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04755497T ATE464653T1 (de) 2003-06-30 2004-06-16 Auf siloxanen basierende diamine enthaltende unterfüll- und formmassen

Country Status (8)

Country Link
US (3) US7084492B2 (de)
EP (1) EP1647052B1 (de)
CN (1) CN100464398C (de)
AT (1) ATE464653T1 (de)
DE (1) DE602004026589D1 (de)
HK (1) HK1082596A1 (de)
TW (1) TWI246129B (de)
WO (1) WO2005006428A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070029653A1 (en) * 2005-08-08 2007-02-08 Lehman Stephen E Jr Application of autonomic self healing composites to integrated circuit packaging
DE102005062783A1 (de) * 2005-12-28 2007-07-05 Robert Bosch Gmbh Elektronikmodul sowie Verfahren zur Herstellung eines solchen
US7534649B2 (en) * 2006-05-12 2009-05-19 Intel Corporation Thermoset polyimides for microelectronic applications
US20080122049A1 (en) * 2006-11-28 2008-05-29 Texas Instruments Incorporated Leadframe finger design to ensure lead-locking for enhanced fatigue life of bonding wire in an overmolded package
US7948090B2 (en) * 2006-12-20 2011-05-24 Intel Corporation Capillary-flow underfill compositions, packages containing same, and systems containing same
US9330993B2 (en) * 2012-12-20 2016-05-03 Intel Corporation Methods of promoting adhesion between underfill and conductive bumps and structures formed thereby

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660434A (en) * 1968-03-26 1972-05-02 Nasa Siloxane-containing epoxide compounds
JP3751054B2 (ja) * 1994-11-18 2006-03-01 宇部興産株式会社 電子部品用接着剤
US5700581A (en) * 1996-06-26 1997-12-23 International Business Machines Corporation Solvent-free epoxy based adhesives for semiconductor chip attachment and process
JPH10163386A (ja) * 1996-12-03 1998-06-19 Toshiba Corp 半導体装置、半導体パッケージおよび実装回路装置
US5922167A (en) * 1997-01-16 1999-07-13 Occidential Chemical Corporation Bending integrated circuit chips
JP4228400B2 (ja) * 1997-02-05 2009-02-25 日本メクトロン株式会社 接着剤組成物溶液
US6190509B1 (en) * 1997-03-04 2001-02-20 Tessera, Inc. Methods of making anisotropic conductive elements for use in microelectronic packaging
US5935372A (en) * 1997-04-29 1999-08-10 Occidental Chemical Corporation Adhesive sealant for bonding metal parts to ceramics
US6156820A (en) * 1998-12-28 2000-12-05 Occidental Chemical Corporation Polyamideimidesiloxane hot melt adhesive
JP3556503B2 (ja) * 1999-01-20 2004-08-18 沖電気工業株式会社 樹脂封止型半導体装置の製造方法
US6512031B1 (en) 1999-04-15 2003-01-28 Shin-Etsu Chemical Co., Ltd. Epoxy resin composition, laminate film using the same, and semiconductor device
US6429238B1 (en) 1999-06-10 2002-08-06 Shin-Etsu Chemical Co., Ltd. Flip-chip type semiconductor device sealing material and flip-chip type semiconductor device
US6444921B1 (en) * 2000-02-03 2002-09-03 Fujitsu Limited Reduced stress and zero stress interposers for integrated-circuit chips, multichip substrates, and the like
JP4753460B2 (ja) * 2000-08-16 2011-08-24 株式会社クリエイティブ テクノロジー 静電チャック及びその製造方法
JP2002121207A (ja) * 2000-10-16 2002-04-23 Kanegafuchi Chem Ind Co Ltd 組成物とそれを用いた感光性組成物及びカバーレイ
JP2002194053A (ja) 2000-12-22 2002-07-10 Shin Etsu Chem Co Ltd 半導体スクリーン印刷封止用液状エポキシ樹脂組成物
US6518096B2 (en) * 2001-01-08 2003-02-11 Fujitsu Limited Interconnect assembly and Z-connection method for fine pitch substrates
US6573592B2 (en) * 2001-08-21 2003-06-03 Micron Technology, Inc. Semiconductor die packages with standard ball grid array footprint and method for assembling the same
JP3723483B2 (ja) 2001-10-16 2005-12-07 日本電気株式会社 電子部品装置

Also Published As

Publication number Publication date
CN100464398C (zh) 2009-02-25
US20040262750A1 (en) 2004-12-30
US7294915B2 (en) 2007-11-13
TWI246129B (en) 2005-12-21
US20080009130A1 (en) 2008-01-10
US7479449B2 (en) 2009-01-20
EP1647052A1 (de) 2006-04-19
WO2005006428A1 (en) 2005-01-20
TW200501284A (en) 2005-01-01
CN1813346A (zh) 2006-08-02
US20060043614A1 (en) 2006-03-02
DE602004026589D1 (de) 2010-05-27
EP1647052B1 (de) 2010-04-14
US7084492B2 (en) 2006-08-01
HK1082596A1 (en) 2006-06-09

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