CN1808323A - 自我补偿的电压调节器、升压电路及其电压调节方法 - Google Patents
自我补偿的电压调节器、升压电路及其电压调节方法 Download PDFInfo
- Publication number
- CN1808323A CN1808323A CN200510137416.9A CN200510137416A CN1808323A CN 1808323 A CN1808323 A CN 1808323A CN 200510137416 A CN200510137416 A CN 200510137416A CN 1808323 A CN1808323 A CN 1808323A
- Authority
- CN
- China
- Prior art keywords
- voltage
- booster
- feedback signal
- transistor
- variable current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/905,386 US7068024B1 (en) | 2004-12-30 | 2004-12-30 | Voltage regulator having positive temperature coefficient for self-compensation and related method of regulating voltage |
US10/905,386 | 2004-12-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1808323A true CN1808323A (zh) | 2006-07-26 |
CN100421045C CN100421045C (zh) | 2008-09-24 |
Family
ID=36600466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101374169A Active CN100421045C (zh) | 2004-12-30 | 2005-12-30 | 自我补偿的电压调节器、升压电路及其电压调节方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7068024B1 (zh) |
CN (1) | CN100421045C (zh) |
TW (1) | TWI278734B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103513686A (zh) * | 2013-09-30 | 2014-01-15 | 无锡中星微电子有限公司 | 一种电压调节器 |
CN103782472A (zh) * | 2011-06-22 | 2014-05-07 | 雷诺股份公司 | 用于车辆车载电池充电器的补偿系统及补偿方法 |
CN108693911A (zh) * | 2017-03-31 | 2018-10-23 | 艾普凌科有限公司 | 基准电压发生装置 |
CN110648697A (zh) * | 2018-06-27 | 2020-01-03 | 台湾积体电路制造股份有限公司 | 选择电路、用于存储器存储系统的防闩锁电路及方法 |
CN111930167A (zh) * | 2020-07-07 | 2020-11-13 | 芯创智(北京)微电子有限公司 | 一种应用于超低静态电流ldo的输出级泄放电路 |
CN115309231A (zh) * | 2021-05-08 | 2022-11-08 | 长鑫存储技术有限公司 | 比较电路与负电压生成系统 |
WO2024036744A1 (zh) * | 2022-08-15 | 2024-02-22 | 长鑫存储技术有限公司 | 电源电路与芯片 |
WO2024036743A1 (zh) * | 2022-08-15 | 2024-02-22 | 长鑫存储技术有限公司 | 电源电路与芯片 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7692442B2 (en) * | 2005-11-17 | 2010-04-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for detecting a current and temperature for an integrated circuit |
US7562245B1 (en) * | 2006-06-09 | 2009-07-14 | Vivante Corporation | Single chip 3D and 2D graphics processor with embedded memory and multiple levels of power controls |
JP4746489B2 (ja) * | 2006-06-28 | 2011-08-10 | 株式会社リコー | 半導体測定装置 |
DE602007008050D1 (de) * | 2007-02-27 | 2010-09-09 | St Microelectronics Srl | Verbesserter Spannungsregler mit Leckstromkompensation |
US20110018616A1 (en) * | 2009-07-22 | 2011-01-27 | Kontel Data System Limited | Charge pump circuit |
CN102097131B (zh) * | 2009-12-15 | 2014-03-12 | 中芯国际集成电路制造(上海)有限公司 | 电压生成电路 |
CN102545589B (zh) * | 2010-12-27 | 2015-09-16 | 上海天马微电子有限公司 | 直流电压转换电路 |
US8547166B2 (en) * | 2011-07-29 | 2013-10-01 | Macronix International Co., Ltd. | Temperature compensation circuit and temperature compensated metal oxide semiconductor transistor using the same |
KR102490273B1 (ko) * | 2018-03-29 | 2023-01-20 | 에스케이하이닉스 주식회사 | 전자 장치 |
KR102662910B1 (ko) * | 2020-04-01 | 2024-05-08 | 삼성디스플레이 주식회사 | 전력 관리 회로, 화소 전원 전압 생성 방법, 및 표시 장치 |
US20230188038A1 (en) * | 2021-12-09 | 2023-06-15 | Renesas Electronics America Inc. | Regulator booster |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4825099A (en) * | 1987-12-04 | 1989-04-25 | Ford Microelectronics | Feedback-controlled current output driver having reduced current surge |
US5783952A (en) * | 1996-09-16 | 1998-07-21 | Atmel Corporation | Clock feedthrough reduction system for switched current memory cells |
US6097242A (en) * | 1998-02-26 | 2000-08-01 | Micron Technology, Inc. | Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits |
US6147914A (en) * | 1998-08-14 | 2000-11-14 | Monolithic System Technology, Inc. | On-chip word line voltage generation for DRAM embedded in logic process |
JP2000065872A (ja) * | 1998-08-20 | 2000-03-03 | Fuji Electric Co Ltd | 電圧検出回路 |
US6075740A (en) | 1998-10-27 | 2000-06-13 | Monolithic System Technology, Inc. | Method and apparatus for increasing the time available for refresh for 1-t SRAM compatible devices |
US6498737B1 (en) | 2002-01-16 | 2002-12-24 | Taiwan Semiconductor Manufacturing Company | Voltage regulator with low sensitivity to body effect |
-
2004
- 2004-12-30 US US10/905,386 patent/US7068024B1/en active Active
-
2005
- 2005-12-30 TW TW094147620A patent/TWI278734B/zh active
- 2005-12-30 CN CNB2005101374169A patent/CN100421045C/zh active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103782472A (zh) * | 2011-06-22 | 2014-05-07 | 雷诺股份公司 | 用于车辆车载电池充电器的补偿系统及补偿方法 |
CN103513686A (zh) * | 2013-09-30 | 2014-01-15 | 无锡中星微电子有限公司 | 一种电压调节器 |
CN103513686B (zh) * | 2013-09-30 | 2016-03-16 | 无锡中感微电子股份有限公司 | 一种电压调节器 |
CN108693911B (zh) * | 2017-03-31 | 2021-01-12 | 艾普凌科有限公司 | 基准电压发生装置 |
CN108693911A (zh) * | 2017-03-31 | 2018-10-23 | 艾普凌科有限公司 | 基准电压发生装置 |
CN110648697A (zh) * | 2018-06-27 | 2020-01-03 | 台湾积体电路制造股份有限公司 | 选择电路、用于存储器存储系统的防闩锁电路及方法 |
US11145335B2 (en) | 2018-06-27 | 2021-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Latch-up prevention circuit for memory storage system |
CN110648697B (zh) * | 2018-06-27 | 2021-12-31 | 台湾积体电路制造股份有限公司 | 选择电路、用于存储器存储系统的防闩锁电路及方法 |
CN111930167A (zh) * | 2020-07-07 | 2020-11-13 | 芯创智(北京)微电子有限公司 | 一种应用于超低静态电流ldo的输出级泄放电路 |
CN115309231A (zh) * | 2021-05-08 | 2022-11-08 | 长鑫存储技术有限公司 | 比较电路与负电压生成系统 |
CN115309231B (zh) * | 2021-05-08 | 2024-05-10 | 长鑫存储技术有限公司 | 比较电路与负电压生成系统 |
WO2024036744A1 (zh) * | 2022-08-15 | 2024-02-22 | 长鑫存储技术有限公司 | 电源电路与芯片 |
WO2024036743A1 (zh) * | 2022-08-15 | 2024-02-22 | 长鑫存储技术有限公司 | 电源电路与芯片 |
Also Published As
Publication number | Publication date |
---|---|
CN100421045C (zh) | 2008-09-24 |
TW200638175A (en) | 2006-11-01 |
TWI278734B (en) | 2007-04-11 |
US7068024B1 (en) | 2006-06-27 |
US20060145679A1 (en) | 2006-07-06 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
CI01 | Publication of corrected invention patent application |
Correction item: Address Correct: Hsinchu City, Taiwan, China False: Taiwan, Hsinchu, China Science Industry Park, Hsinchu Road, force six, No. eight Number: 30 Page: 427 Volume: 22 Correction item: Applicant Correct: Taiwan Semiconductor Manufacturing Co., Ltd. False: Taiwan Semiconductor Mfg Number: 30 Page: 427 Volume: 22 |
|
CI02 | Correction of invention patent application |
Correction item: Address Correct: Hsinchu City, Taiwan, China False: Taiwan, Hsinchu, China Science Industry Park, Hsinchu Road, force six, No. eight Number: 30 Page: The title page Volume: 22 Correction item: Applicant Correct: Taiwan Semiconductor Manufacturing Co., Ltd. False: Taiwan Semiconductor Mfg Number: 30 Page: The title page Volume: 22 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT ADDRESS; FROM: JITIDIAN ROAD, TAIWAN PROVINCE, CHINA CO., LTD. XINZHUKEXUEGONGYEYUAN DISTRICT, TAIWAN PROVINCE, CHINA NO. 8, LIXINGLIU ROAD, XINZHU CITY TO: JITIDIAN ROAD, TAIWAN PROVINCE CO., LTD. XINZHU CITY, TAIWAN, CHINA |
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ERR | Gazette correction |
Free format text: CORRECT: APPLICANT ADDRESS; FROM: JITIDIAN ROAD, TAIWAN PROVINCE, CHINA CO., LTD. XINZHUKEXUEGONGYEYUAN DISTRICT, TAIWAN PROVINCE, CHINA NO. 8, LIXINGLIU ROAD, XINZHU CITY TO: JITIDIAN ROAD, TAIWAN PROVINCE CO., LTD. XINZHU CITY, TAIWAN, CHINA |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |