CN1795515A - 浅色静电放电安全陶瓷 - Google Patents
浅色静电放电安全陶瓷 Download PDFInfo
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- CN1795515A CN1795515A CNA200480013963XA CN200480013963A CN1795515A CN 1795515 A CN1795515 A CN 1795515A CN A200480013963X A CNA200480013963X A CN A200480013963XA CN 200480013963 A CN200480013963 A CN 200480013963A CN 1795515 A CN1795515 A CN 1795515A
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- Prior art keywords
- electrostatic dispersion
- ceramic element
- dispersion ceramic
- scattering material
- electrostatic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 85
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 55
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 39
- 239000006185 dispersion Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 30
- -1 zinc aluminate Chemical class 0.000 claims description 19
- 239000011787 zinc oxide Substances 0.000 claims description 19
- 230000003068 static effect Effects 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- 239000002223 garnet Substances 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 229910000323 aluminium silicate Inorganic materials 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 4
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 4
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000391 magnesium silicate Substances 0.000 claims description 4
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 4
- 235000019792 magnesium silicate Nutrition 0.000 claims description 4
- 229910000164 yttrium(III) phosphate Inorganic materials 0.000 claims description 4
- UXBZSSBXGPYSIL-UHFFFAOYSA-K yttrium(iii) phosphate Chemical compound [Y+3].[O-]P([O-])([O-])=O UXBZSSBXGPYSIL-UHFFFAOYSA-K 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims 5
- 238000010998 test method Methods 0.000 claims 5
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 150000004673 fluoride salts Chemical class 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 150000003016 phosphoric acids Chemical class 0.000 claims 1
- 150000004760 silicates Chemical class 0.000 claims 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 abstract 4
- 239000003607 modifier Substances 0.000 abstract 2
- 239000000523 sample Substances 0.000 description 17
- 239000000654 additive Substances 0.000 description 15
- 230000000996 additive effect Effects 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000013074 reference sample Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 4
- 229910003321 CoFe Inorganic materials 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000012925 reference material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910015372 FeAl Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910017563 LaCrO Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910000604 Ferrochrome Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017771 LaFeO Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910016583 MnAl Inorganic materials 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910009580 YMnO Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000004814 ceramic processing Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 210000002307 prostate Anatomy 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
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- H—ELECTRICITY
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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Abstract
本发明的方面涉及一种静电耗散陶瓷元件，该元件含有稳定的氧化锆基体，表面电阻率为1×105至1×1012欧姆/平方，包含至少2体积％的散射材料。所述稳定的氧化锆的含量可为60－95重量％。本发明的另外方面涉及一种静电耗散陶瓷材料，该材料包含稳定的氧化锆、电阻率调节剂和散射材料。稳定的氧化锆的含量可占陶瓷材料的60－95重量％。电阻率调节剂的含量可为5－30重量％，散射材料可至少占所述静电耗散陶瓷材料的2体积％。该元件可用来制造硬盘驱动器之类的电子元件。
Description
背景
发明领域
本发明一般地涉及陶瓷材料，该陶瓷材料具有用于静电电荷安全放电的静电放电耗散性质。
相关领域描述
在日益进步的科技时代，静电放电可以是代价高或危险的。静电放电(ESD)会引燃易燃材料，破坏电子元件，向清洁的环境中吸引玷污物，或者使产品粘在一起。这些效应可造成重大的损失。
静电电荷可以在摩擦起电过程中产生。在这些摩擦起电过程中，互相接触的表面上产生了相反的电荷。当这些表面分离时，不同的电荷仍然保留下来。电荷也可以通过磁场或其它过程产生。
当这些静电电荷放电时，可能会对敏感的电子装置造成破坏。静电放电可能会改变半导体装置的电性质，从而降低其性能或对其造成破坏。静电放电还会影响电子系统的运行，造成仪器故障或失灵。在清洁房间内，带电的表面会吸引和固定玷污物，使得难以从环境中除去这些玷污物。静电电荷还会将玷污物吸引到硅片或电子线路表面上。这些玷污物会产生随机的缺陷，从而降低产率。静电放电还会在织物(web)制造过程和易燃粉末制造过程中造成危险。
ESD对产品的破坏可造成重大的经济损失。估计每年电子工业中ESD破坏所造成的损失高达数十亿美元。如果包括相关的维修、重新加工、运输、劳力和管理费用，ESD造成的经济损失是更大的。
对ESD的控制在电子工业中特别重要，但是要求较高，需要能够成功用于各种自动化电子生产过程的高密度而坚固的ESD安全材料。
由于上述原因，通常需要提供一种改进的静电放电耗散材料，该材料应具有适用于包括电子工业在内的高要求用途的性质。
概述
本发明的方面涉及一种静电耗散陶瓷元件，该元件具有稳定的氧化锆基体(base)，该元件的表面电阻率为1×105至1×1012欧姆/平方(square)，包含至少2体积％的散射材料。所述稳定的氧化锆的的含量可为60-95重量％。
本发明的另外方面涉及一种静电耗散陶瓷材料，该材料包含稳定的氧化锆、电阻率调节剂和散射材料。稳定的氧化锆的含量可为陶瓷材料的60-95重量％。电阻率调节剂的含量可为5-30重量％，散射材料可至少占所述静电耗散陶瓷材料的2体积％。
本发明的其它方面涉及制造电子元件的方法。该方法包括提供用来支承电子元件的支承装置，和对电子元件进行加工。该支承装置的材料包含60-95重量％稳定的氧化锆和至少2体积％的散射材料。该支承装置的表面电阻率可为1×105至1×1012欧姆/平方。
本发明的方面还涉及制造硬盘驱动器的方法。该方法包括为硬盘驱动器元件提供支承物，并对硬盘驱动器元件进行加工。该支承物包含一种静电耗散材料，该材料包含65-90重量％的稳定的氧化锆和至少2体积％的散射材料。该支承装置的表面电阻率可为1×105至1×1012欧姆/平方。
附图简述
结合这些附图，可以更好地理解本发明，并使其各个目的、特征和优点对本领域的技术人员显而易见。
图1比较参比材料和示例材料的漫反射系数。
图2说明添加剂对漫反射系数的影响。
图3显示添加剂对亮度L*的影响。
在不同的图中，对相近或相同的对象使用相同的指示符号。
优选实施方式的描述
根据本发明的一个实施方式，提供一种包含稳定的二氧化锆基体和散射材料的静电耗散陶瓷元件。所述稳定的氧化锆基体占该元件的60-95重量％，所述散射材料占该元件的2体积％。该元件还可包含电阻率调节剂。静电耗散陶瓷元件的表面电阻率为1×105至1×1012欧姆/平方，其体电阻率可为1×104至1×1011欧姆厘米。
所述稳定的氧化锆可用2.6-10摩尔％的稳定金属氧化物进行稳定。该稳定剂包括氧化钇，氧化钪，稀土元素氧化物例如镧、铈、钪、钕、镱、铒、钆、钐和镝的氧化物之类的稀土氧化物，以及氧化镁与氧化钙之类的碱土氧化物。更具体地说，氧化钇的用量可为2-10摩尔％，在一些情况下为2.5-4.5摩尔％，具体的例子为2.6、2.8和3.0摩尔％。氧化钇部分稳定的氧化锆(Y-PSZ)具有极好的机械性能，这是由于氧化锆部分为四方结构。这些机械性能在ESD安全材料中是有益的，这是因为它们能够用来有益地发挥结构功能。
在一个实施方式中，散射材料具有浅的颜色、低的折射率，而且对陶瓷加工的严酷作用具有稳定性。在例如陶瓷加工过程中经历的条件下，该材料应当基本不与陶瓷基体和任何减小电阻率的材料反应。这种散射材料可包括钇铝石榴石(YAG)、铝酸锌、铝酸镁、磷酸钇之类的稳定磷酸盐、硅酸镁之类的稳定硅酸盐、硅铝酸铍之类的稳定硅铝酸盐和氟化钙之类的稳定氟化物。这些材料本身可以加入将要烧结的混合料，或者也可以它们的组成部分加入，使其在其中反应生成该种材料。例如，向氧化锆中加入氧化铝和氧化锌的混合物，在烧结过程中可生成铝酸锌。
所述散射材料的折射率与基体陶瓷材料可显著不同。折射率可至少相差0.25。然而，折射率也可相差0.3、0.5或更多。例如YAG、铝酸锌和铝酸镁的折射率分别为1.83、1.879、1.72。这些折射率与氧化锆的折射率(2.2)至少相差0.25。
下表示例性地列出了散射材料的折射率。
| 材料 | 折射率 |
| YAG | 1.83 |
| 铝酸锌 | 1.879 |
| 铝酸镁 | 1.72 |
| YPO4 | 1.77 |
| Mg2SiO4 | 1.65 |
| Be3Al2Si6O18 | 1.58 |
| CaF2 | 1.43 |
这些散射材料还应基本不与基体陶瓷材料和任何的电阻率调节剂反应，散射材料的熔点要高于陶瓷加工温度。例如，在高达1200℃或1400℃的条件下，在3％氧化钇稳定的氧化锆和氧化锌存在下，钇铝石榴石(YAG)是稳定的。另一方面，在这些条件下，氧化铝之类的散射材料则会与氧化锌反应形成铝酸锌。因此，优选的散射材料将随着基体材料、电阻率调节剂和加工条件改变。
散射材料的粒度会影响该材料的效果。大颗粒尺寸散射光线的效果较差，小颗粒尺寸的散射效果也较差。当散射材料的粒度为50纳米至5微米(im)时，效果最佳。粒度也可为0.2微米至2微米。
一种示例性的元件可为在可见波长的特定范围内具有较高漫反射系数的浅色元件。根据CIE1976L*a*b标度(scale)，该元件的亮度L*可约大于50。亮度可大于75或80。该元件在可见光的蓝色和绿色区域中应具有较高的漫反射系数。例如，在450纳米处的漫反射系数可大于20。
一种示例性的元件还可相对密实(dense)并具有高的强度。相对密度可大于理论密度的95％。例如，相对密度可不小于理论密度的98、99或99.5％。根据在3毫米×4毫米×50毫米的棒上的4点测试，强度至少可为600兆帕。例如，强度可为700兆帕、800兆帕、900兆帕或高于1100兆帕。
单独使用氧化锆会具有过高的电阻率，从而无法减少静电积累，无法安全放电。可用添加剂来降低电阻率。根据用途，优选的电阻率可在1×105至1×1012欧姆/平方(表面电阻率)和1×104至1×1011欧姆厘米(体电阻率)的范围内变化。添加剂形成导体或半导体分离晶粒相，该相在基体组合物内形成独立的第二相。电阻率调节剂可包括例如金属氧化物、金属碳化物、金属氮化物、金属氧碳化物、金属氮氧化物和金属氧碳氮化物等材料。下表提供了基体材料和电阻率调节添加剂的各种组合。不同的电阻率调节剂或各种电阻调节剂与基体材料的组合会对材料的电阻率产生不同的影响。另外，各种材料和材料的组合会对给定波长下的漫反射系数或颜色亮度产生不同的影响。例如，氧化锌(ZnO)是特别有效的用于氧化锆基体材料的添加剂。然而，ZnO对于氧化铝之类的其它基体材料可能会有不同的效果，或者可能会与这些其它基体材料发生反应。
| 基体材料(绝缘体) | 半导体型 | 通式 | 电阻率调节剂(例子) |
| 氧化锆Y-TZPCe-TZPMg-PSZZTA | 碳化物 | MC | B4C、SiC、TiC、Cr4C、VC、ZrC、TaC、WC、石墨、碳 |
| 氮化物 | MN | TiN、ZrN、HfN | |
| 硼化物 | MB | TiB2、ZrB2、CaB6、LaB6、NbB2 | |
| 硅化物 | MSi | MoSi2 | |
| 碳氮化物 | M(C，N) | Ti(C，N)、Si(CN) | |
| 单一氧化物 | MO | NiO、FeO、MnO、Co2P3、Cr2O3、Fe2O3、Ga2O3、In2O3、GeO2、MnO2、TiO2-X、RuO2、Rh2O3、V2O3、Nb2O5、Ta2O5、WO3 | |
| 掺杂氧化物 | (M+m)O | SnO2、ZnO、CeO2、TiO2、ITO | |
| 钙钛矿 | ABO3(AO·BO2) | MgTiO3、CaTiO3、BaTiO3、SrTiO3、LaCrO3、LaFeO3、LaMnO3、YMnO3、MgTiO3F、FeTiO3、SrSnO3、CaSnO3、LiNbO3 | |
| 尖晶石 | AB2O4(MO·Fe2O3) | Fe3O4、MgFe2O4、MnFe2O4、CoFe2O4、NiFe2O4、ZnFe2O4、CoFe2O4、CoFe2O4、FeAl2O4、MnAl2O4、ZnAl2O4、ZnLa2O4、FeAl2O4、MgIn2O4、MnIn2O4、FeCr2O4、NiCr2O4、ZnGa2O4、LaTaO4、BdTaO4 | |
| 磁铁铅矿 | MO·6Fe2O3 | BaFe12O19 | |
| 石榴石 | 3M2O3·5Fe2O3 | 3Y2O3·5Fe2O3 | |
| 其它氧化物 | Bi2Ru2O7 | ||
| 氧化铝 | TiO2-X | ||
| SiC | Si3N4结合的 | ||
| 氮化硅 | SiC，TiN | ||
| SiAlON | TiN，Ti(O，N) | ||
| 氮化铝 | TiN |
在各种示例性的实施方式中，电阻率调节剂的加入量可为10-40体积％。例如，可向Y-PSZ中加入15-35体积的氧化锌。在其它例子中，LaMNO3的加入量可为20-30体积％，LaCrO3的加入量可为10-40体积％，ZrC的加入量可为10-25体积％，BaO.6Fe2O3的加入量在25体积％附近。在一个具有氧化钇稳定的韧性氧化锆多晶(Y-TZP)基体材料的实施方式中，可优选使用氧化锡和氧化锌，这是由于它们价格较为便宜、毒性较低、颜色较浅。
在一个特定的实施方式中，静电耗散陶瓷元件可包含70-85重量％稳定的氧化锆、15-25重量％的氧化锌和大于2体积％的YAG。
在另一个特殊的实施方式中，静电耗散陶瓷材料可包含60-90重量％稳定的氧化锆、5-30重量％的电阻率调节剂和至少2体积％的散射材料。根据电阻率调节剂种类、电阻率调节剂的量和加工条件等因素，材料的表面电阻率可为1×105至1×1012欧姆/平方。体电阻率可为1×104至1×1011欧姆厘米。按照CIE1976L*a*b标度(scale)，该元件的亮度L*可约大于50。该材料在450纳米还可具有大于20的漫反射系数。材料的相对密度可大于95、98或99％。
在另一个示例性的实施方式中，所述陶瓷材料可包含60-95重量％的氧化锆和分散材料。表面电阻率可为1×105至1×1012欧姆/平方(square)。所含的散射材料的折射率与氧化锆的折射率至少相差0.25。体电阻率为1×104至1×1011欧姆厘米。该静电耗散陶瓷材料可具有大于50的亮度L*，在450纳米的漫反射系数可大于20。该材料还可具有大于98的密度。
另一个静电耗散陶瓷材料的例子的表面电阻率为1×105至1×1012欧姆/平方，相对密度至少为98，包含陶瓷基体和0.2-10重量％的散射材料。该散射材料可为YAG、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍或氟化钙。该散射材料可为磷酸盐、硅酸盐、硅铝酸盐或氟化物。
根据本发明的一个方面，某些工具、支架之类的元件和部件用ESD安全的即静电耗散材料制成。强度足够大、足够机械牢固的ESD安全材料倾向于是密实即低孔隙率的。本发明可得到例如浅色密实的陶瓷。本工业中的许多加工都通过视觉系统实现了自动化。这些视觉系统通常依靠材料间的差异来有效确定部件的位置。如果部件、工具、自动化机械和制造表面之间有强烈的差异，会改进这些自动化系统的操作。例如磁性记录头基本上是黑色的。使用浅色的ESD耗散工具可以改进视觉系统的光学识别能力和性能。
本发明的另一方面涉及制造电子元件的方法。该方法包括提供用来支承电子元件的支承装置，并对该电子元件进行加工。该支承装置的材料包含60-95重量％稳定的氧化锆和至少2体积％的散射材料。该支承装置的表面电阻率可为1×105至1×1012欧姆/平方。
所述支承装置可以是夹具、工具、支架或其它制造部件。在一个例子中，所述电子元件为磁阻头。加工可包括对磁阻头支承面进行磨光或机械加工。
本发明的其它方面涉及制造硬盘驱动器的方法。该方法包括为硬盘驱动器元件提供支承物，并对硬盘驱动器元件进行加工。该支承物包含一种静电耗散材料，该材料包含65-90重量％稳定的氧化锆和至少2体积％的散射材料。该静电耗散材料的表面电阻率可为1×105至l×1012欧姆/平方。
该硬盘驱动器元件可以是例如磁阻头。加工可包括磨光、机械加工以及采集(pick)和安放(place)过程。支承物可以是夹具。
实施例
实施例1
将3摩尔％氧化钇稳定的氧化锆、氧化锌和钇铝石榴石粉末混合起来，其中这三种组分的含量分别为70重量％、17.5重量％和12.5重量％。还制备了参比样，该参比样包含82％钇稳定的氧化锆和18％的氧化锌。将参比样和样品压成圆片，在1400℃烧制1小时，再在1350℃的氩气气氛下、在200兆帕压力进行热等静压45分钟。该方法制得了相对密度大于98％的样品和参比样品。然后在650℃的空气气氛下对样品进行退火，直至表面电阻超过
用伊利诺斯州Bensonville的Prostat公司生产的PRF-912表面电阻探针测量表面电阻。结果列于下表。
| 样品 | ZrO2-Y2O3 | ZnO | YAG | 表面电阻(MW) |
| 参比样品(不含YAG) | 82 | 18 | 0 | 2.4 |
| S1 | 70 | 17.5 | 12.5 | 4.5 |
用弗吉尼亚州的Hunter Associates Laboratory of Reston制造的Miniscan XE脉冲分光计测量样品和参比样品的漫反射系数。如图1所示，样品S1的漫反射系数平均高于参比材料的漫反射系数。具体来说，在光谱的蓝端，样品的漫反射系数显著地大于参比材料。CIEL*a*b值列于下表。L*测量值显示了亮度并在0-100之间变化，其中100为白色，1为黑色。当a*测量值为正值时表示红色，当其为负值时，表示绿色。当b*测量值为正值时表示黄色，当其为负值时，表示蓝色。样品的亮度与参比样品接近。然而，样品显示比参比样品更多的红色和更少的黄色。
| 样品 | L* | a* | b* |
| S1 | 80.84 | -2.30 | 9.56 |
| 参比样品 | 78.78 | -0.58 | 41.53 |
实施例2
按照与实施例1相同的操作过程制备了大量样品。这些样品的组成列于下表。在每种样品中，材料的平衡是18.7重量％氧化锌和81.3重量％氧化锆的混合物。表的最后一列是散射材料添加剂的体积分数，假定散射材料与样品其它组分没有显著的互溶度。又是在忽略互溶的情况下，与添加剂一起另外加入氧化锌，将氧化锌的体积分数保持在20％。
| 样品名 | 重量％YAG | 重量％ZnAl2O4 | 重量％MgAl2O4 | 加入混合物的重量％ZnO，用以保持20体积％ZnO | Eq体积％添加剂 |
| 1RM3- | 0.23 | 0.07 | 0.3 | ||
| 2RM3- | 0.23 | 0.07 | 0.3 | ||
| 5RM3- | 0.78 | 0.24 | 1 | ||
| 6RM3- | 0.78 | 0.24 | 1 | ||
| 9RM3- | 2.36 | 0.71 | 3 | ||
| 10RM3- | 2.36 | 0.71 | 3 | ||
| 13RM3- | 7.99 | 2.41 | 10 | ||
| 14RM3- | 7.99 | 2.41 | 10 | ||
| 23RM3- | 7.92 | 2.41 | 10 | ||
| 25RM3- | 6.27 | 2.41 | 10 |
热等静压处理之后，对样品表面进行磨光，并在空气中、650℃下对样品进行加热，直至表面电阻超过1
用Miniscan XE脉冲分光计测定漫反射系数，CIEL*，a*，b*标度列于下表。表面电阻显示出从1.16至703
的变化。L*测量值为75.14至85.79。a*测量值是-1.71至1.15，b*测量值为10.85至40.34。在450纳米的漫反射系数为20.2-43.27。这些结果的图表形式见图2和3。
| 样品名 | 表面电阻(MW) | L* | a* | b* | 在450纳米的漫反射系数 |
| RM3-1 | 45.3 | 75.54 | 0.96 | 38.76 | 20.22 |
| RM3-2 | 13.7 | 75.8 | -0.7 | 36.23 | 21.76 |
| RM3-5 | 1.56 | 77.55 | -1.11 | 34.11 | 24.96 |
| RM3-6 | 3.93 | 78.9 | -0.58 | 35.27 | 25.54 |
| RM3-9 | 34.1 | 81.26 | 2.11 | 40.34 | 24.07 |
| RM3-10 | 11.3 | 80.76 | -0.95 | 33.42 | 28.63 |
| RM3-13 | 3.52 | 79.82 | -0.91 | 21.05 | 37.1 |
| RM3-14 | 10.9 | 82.98 | -1.71 | 19.01 | 43.27 |
| RM3-22 | 0.012 | 82.9 | -3.91 | 23.35 | 39.12 |
| RM3-23 | 1.16 | 85.79 | 1.15 | 36.84 | 28.51 |
| RM3-25 | 703 | 75.14 | -2.16 | 10.85 | 39.63 |
图2显示散射材料添加剂对450纳米的漫反射系数的影响。横轴表示添加剂的体积百分数，纵轴表示漫反射的百分数。随着YAG体积百分数的增加，漫反射系数从20％增加到最高43.27％。当加入大约10体积％的铝酸锌或铝酸镁时，450纳米处的漫反射系数分别为28.51和39.63。甚至较小量的钇铝石榴石，对漫反射系数也有影响。添加剂含量优选大于2体积％。
图3说明添加剂对亮度L*的影响。横轴表示添加剂的体积百分数，纵轴表示L*。同样地，随着YAG含量的增加，L*值增大。当铝酸锌含量为10体积％时，L*＝85.79，当铝酸镁含量为10体积％时，L*＝75.14。在这些实施例中，添加剂的粒度小于5微米。粒度通常可为0.05-5微米，较佳的是0.2-2微米。
Claims (43)
1.一种静电耗散陶瓷元件，所述元件包含：60-95重量％稳定的氧化锆、具有1×105至1×1012欧姆/平方的表面电阻率、且包含至少2体积％的散射材料。
2.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料的折射率与氧化锆的折射率至少相差0.25。
3.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述体电阻率为1×104至1×1011欧姆厘米。
4.如权利要求1所述的静电耗散陶瓷元件，所述元件的亮度L*大于约50。
5.如权利要求1所述的静电耗散陶瓷元件，所述元件的亮度L*大于约75。
6.如权利要求1所述的静电耗散陶瓷元件，所述元件具有大于约95％理论密度的密度。
7.如权利要求1所述的静电耗散陶瓷元件，所述元件具有大于约98％理论密度的密度。
8.如权利要求1所述的静电耗散陶瓷元件，所述元件具有大于约99％理论密度的密度。
9.如权利要求1所述的静电耗散陶瓷元件，所述元件在450纳米处具有大于20％的漫反射系数。
10.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料的粒度为约0.05-约5微米。
11.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料的粒度为0.2-2微米。
12.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料选自下组：钇铝石榴石、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍和氟化钙。
13.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料选自下组：磷酸盐类、硅酸盐类、硅铝酸盐类和氟化物类。
14.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料具有高于1200℃的熔点，且在1200℃基本不与氧化锆反应。
15.如权利要求1所述的静电耗散陶瓷元件，所述元件还包含电阻率调节剂。
16.如权利要求1所述的静电耗散陶瓷元件，所述元件还包含选自下组的电阻率调节剂：氧化锌、氧化锡、氧化铟、氧化镓和氧化镉。
17.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度大于600兆帕。
18.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度至少为800兆帕。
19.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度至少为900兆帕。
20.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度至少为1100兆帕。
21.如权利要求1所述的静电耗散陶瓷元件，所述元件包含70-85重量％稳定的氧化锆、15-25重量％的氧化锌和至少2体积％的钇铝石榴石。
22.一种静电耗散陶瓷元件，所述元件包含：60-95重量％稳定的氧化锆、5-30重量％的电阻率调节剂和至少2体积％的散射材料。
23.如权利要求22所述的静电耗散陶瓷元件，其特征在于，所述散射材料的折射率与氧化锆的折射率至少相差0.25。
24.如权利要求22所述的静电耗散陶瓷元件，其特征在于，所述表面电阻率为1×105至1×1012欧姆/平方。
25.如权利要求22所述的静电耗散陶瓷元件，所述元件的亮度L*大于约50。
26.如权利要求22所述的静电耗散陶瓷元件，所述元件具有大于约95％理论密度的密度。
27.如权利要求22所述的静电耗散陶瓷元件，所述元件在450纳米处具有大于20％的漫反射系数。
28.如权利要求22所述的静电耗散陶瓷元件，其特征在于，所述散射材料的粒度为约0.05-约5微米。
29.如权利要求22所述的静电耗散陶瓷元件，其特征在于，所述散射材料选自下组：钇铝石榴石、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍和氟化钙。
30.如权利要求22所述的静电耗散陶瓷元件，其特征在于，所述散射材料在所述静电耗散陶瓷材料中占2-10体积％。
31.如权利要求22所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度大于600兆帕。
32.如权利要求22所述的静电耗散陶瓷元件，所述元件包含70-85重量％稳定的氧化锆、15-25重量％的氧化锌和至少2体积％的钇铝石榴石。
33.一种制造电子元件的方法，所述方法包括：
提供用来支承电子元件的支承装置，所述支承装置包含60-95重量％稳定的氧化锆和至少2体积％的散射材料，所述支承装置的表面电阻率为1×105至1×1012欧姆/平方；和
对所述电子元件进行加工。
34.如权利要求33所述的方法，其特征在于，所述支承装置为载体。
35.如权利要求33所述的方法，其特征在于，所述支承装置为夹具。
36.如权利要求33所述的方法，其特征在于，所述电子元件为磁阻头。
37.如权利要求33所述的方法，其特征在于，所述加工为磨光。
38.如权利要求33所述的方法，其特征在于，所述加工为对磁阻头支承面进行机械加工。
39.一种制造硬盘驱动器的方法，所述方法包括：
提供用来支承硬盘驱动器元件的支承物，所述支承物包含静电耗散材料，所述静电耗散材料包含60-95重量％稳定的氧化锆和至少2体积％的散射材料，所述静电耗散材料的表面电阻率为1×105至1×1012欧姆/平方；和
对所述硬盘驱动元件进行加工。
40.如权利要求39所述的方法，其特征在于，所述硬盘驱动元件为磁阻头。
41.如权利要求39所述的方法，其特征在于，所述加工为磨光。
42.如权利要求39所述的方法，其特征在于，所述加工为采集和安放过程。
43.如权利要求39所述的方法，其特征在于，所述支承物为夹具。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/442,616 | 2003-05-21 | ||
| US10/442,616 US6946417B2 (en) | 2003-05-21 | 2003-05-21 | Light-colored ESD safe ceramics |
| PCT/US2004/016130 WO2004105052A1 (en) | 2003-05-21 | 2004-05-20 | Light-colored esd safe ceramics |
Publications (2)
| Publication Number | Publication Date |
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| CN1795515A true CN1795515A (zh) | 2006-06-28 |
| CN1795515B CN1795515B (zh) | 2011-03-09 |
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| CN200480013963XA Expired - Fee Related CN1795515B (zh) | 2003-05-21 | 2004-05-20 | 浅色静电放电安全陶瓷 |
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| US (2) | US6946417B2 (zh) |
| JP (1) | JP4861169B2 (zh) |
| KR (1) | KR100710029B1 (zh) |
| CN (1) | CN1795515B (zh) |
| MY (1) | MY137542A (zh) |
| TW (1) | TWI236681B (zh) |
| WO (1) | WO2004105052A1 (zh) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106145938A (zh) * | 2015-04-27 | 2016-11-23 | 深圳市商德先进陶瓷有限公司 | 氧化锆复合陶瓷及其制备方法 |
| CN107986781A (zh) * | 2017-11-30 | 2018-05-04 | 深圳市商德先进陶瓷股份有限公司 | 防静电陶瓷及其制备方法和应用 |
| CN108975891A (zh) * | 2018-08-27 | 2018-12-11 | 佛山石湾鹰牌陶瓷有限公司 | 喷墨渗花玉质抛光砖及其制备方法 |
| CN110615669A (zh) * | 2018-06-20 | 2019-12-27 | 日亚化学工业株式会社 | 陶瓷复合体、使用了其的发光装置和陶瓷复合体的制造方法 |
| CN116283280A (zh) * | 2023-03-29 | 2023-06-23 | 合肥商德应用材料有限公司 | 氧化锆基复合陶瓷和陶瓷吸嘴 |
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| US6669871B2 (en) * | 2000-11-21 | 2003-12-30 | Saint-Gobain Ceramics & Plastics, Inc. | ESD dissipative ceramics |
| US6958303B2 (en) * | 2003-05-30 | 2005-10-25 | Dou Yee Technologies Pte Ltd. | Electro-static dissipative ceramic products and methods |
| JP5325518B2 (ja) * | 2008-07-22 | 2013-10-23 | ショット アクチエンゲゼルシャフト | 透明セラミック及びその製造方法ならびにその透明セラミックスを用いた光学素子 |
| EP2377506B1 (en) | 2010-04-16 | 2014-08-13 | Ivoclar Vivadent AG | Composite ceramic material comprising zirconia |
| WO2018025800A1 (ja) * | 2016-08-02 | 2018-02-08 | 三井金属鉱業株式会社 | 希土類リン酸塩粒子、それを用いた散乱性向上方法 |
| CN107555990A (zh) * | 2017-09-12 | 2018-01-09 | 潮州三环（集团）股份有限公司 | 一种白色陶瓷 |
| RU2665734C1 (ru) * | 2017-11-13 | 2018-09-04 | Федеральное государственное бюджетное учреждение науки Институт металлургии и материаловедения им. А.А. Байкова Российской академии наук (ИМЕТ РАН) | Керамический материал с низкой температурой спекания на основе диоксида циркония тетрагональной модификации |
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| CN1074689C (zh) * | 1996-04-04 | 2001-11-14 | E·O·帕通电子焊接研究院电子束工艺国际中心 | 基体上制备有跨厚度化学组成和结构梯度并陶瓷外层方法 |
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| US6136232A (en) * | 1999-08-13 | 2000-10-24 | Xylon Ceramic Materials Inc. | Electro-static dissipative zirconia |
| US6669871B2 (en) | 2000-11-21 | 2003-12-30 | Saint-Gobain Ceramics & Plastics, Inc. | ESD dissipative ceramics |
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| US6958303B2 (en) * | 2003-05-30 | 2005-10-25 | Dou Yee Technologies Pte Ltd. | Electro-static dissipative ceramic products and methods |
-
2003
- 2003-05-21 US US10/442,616 patent/US6946417B2/en not_active Expired - Lifetime
-
2004
- 2004-05-19 MY MYPI20041897A patent/MY137542A/en unknown
- 2004-05-20 CN CN200480013963XA patent/CN1795515B/zh not_active Expired - Fee Related
- 2004-05-20 JP JP2006514929A patent/JP4861169B2/ja not_active Expired - Lifetime
- 2004-05-20 KR KR1020057022093A patent/KR100710029B1/ko active IP Right Grant
- 2004-05-20 WO PCT/US2004/016130 patent/WO2004105052A1/en active Application Filing
- 2004-05-21 TW TW093114528A patent/TWI236681B/zh active
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106145938A (zh) * | 2015-04-27 | 2016-11-23 | 深圳市商德先进陶瓷有限公司 | 氧化锆复合陶瓷及其制备方法 |
| CN107986781A (zh) * | 2017-11-30 | 2018-05-04 | 深圳市商德先进陶瓷股份有限公司 | 防静电陶瓷及其制备方法和应用 |
| CN110615669A (zh) * | 2018-06-20 | 2019-12-27 | 日亚化学工业株式会社 | 陶瓷复合体、使用了其的发光装置和陶瓷复合体的制造方法 |
| CN110615669B (zh) * | 2018-06-20 | 2023-01-17 | 日亚化学工业株式会社 | 陶瓷复合体、使用了其的发光装置和陶瓷复合体的制造方法 |
| CN108975891A (zh) * | 2018-08-27 | 2018-12-11 | 佛山石湾鹰牌陶瓷有限公司 | 喷墨渗花玉质抛光砖及其制备方法 |
| CN108975891B (zh) * | 2018-08-27 | 2021-11-05 | 佛山石湾鹰牌陶瓷有限公司 | 喷墨渗花玉质抛光砖及其制备方法 |
| CN116283280A (zh) * | 2023-03-29 | 2023-06-23 | 合肥商德应用材料有限公司 | 氧化锆基复合陶瓷和陶瓷吸嘴 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7094719B2 (en) | 2006-08-22 |
| TW200506969A (en) | 2005-02-16 |
| US6946417B2 (en) | 2005-09-20 |
| WO2004105052A1 (en) | 2004-12-02 |
| JP4861169B2 (ja) | 2012-01-25 |
| TWI236681B (en) | 2005-07-21 |
| CN1795515B (zh) | 2011-03-09 |
| MY137542A (en) | 2009-02-27 |
| US20050266977A1 (en) | 2005-12-01 |
| US20040235639A1 (en) | 2004-11-25 |
| KR100710029B1 (ko) | 2007-04-27 |
| JP2006526270A (ja) | 2006-11-16 |
| KR20060017799A (ko) | 2006-02-27 |
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