CN1795515B - 浅色静电放电安全陶瓷 - Google Patents
浅色静电放电安全陶瓷 Download PDFInfo
- Publication number
- CN1795515B CN1795515B CN200480013963XA CN200480013963A CN1795515B CN 1795515 B CN1795515 B CN 1795515B CN 200480013963X A CN200480013963X A CN 200480013963XA CN 200480013963 A CN200480013963 A CN 200480013963A CN 1795515 B CN1795515 B CN 1795515B
- Authority
- CN
- China
- Prior art keywords
- scattering material
- electrostatic dispersion
- ceramic element
- dispersion ceramic
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 47
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- 239000006185 dispersion Substances 0.000 claims description 21
- -1 zinc aluminate Chemical class 0.000 claims description 21
- 239000011787 zinc oxide Substances 0.000 claims description 16
- 230000003068 static effect Effects 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- 239000011701 zinc Substances 0.000 claims description 11
- 239000011777 magnesium Substances 0.000 claims description 10
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000002223 garnet Substances 0.000 claims description 7
- 229910000323 aluminium silicate Inorganic materials 0.000 claims description 6
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 5
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000391 magnesium silicate Substances 0.000 claims description 5
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 5
- 235000019792 magnesium silicate Nutrition 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 229910000164 yttrium(III) phosphate Inorganic materials 0.000 claims description 5
- UXBZSSBXGPYSIL-UHFFFAOYSA-K yttrium(iii) phosphate Chemical compound [Y+3].[O-]P([O-])([O-])=O UXBZSSBXGPYSIL-UHFFFAOYSA-K 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000005452 bending Methods 0.000 claims 4
- 238000010998 test method Methods 0.000 claims 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 13
- 229910002076 stabilized zirconia Inorganic materials 0.000 abstract 4
- 239000003607 modifier Substances 0.000 abstract 2
- 239000000523 sample Substances 0.000 description 17
- 239000000654 additive Substances 0.000 description 15
- 230000000996 additive effect Effects 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000013074 reference sample Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 3
- 239000012925 reference material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229910017563 LaCrO Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000004814 ceramic processing Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 210000002307 prostate Anatomy 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
- C04B35/6455—Hot isostatic pressing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
- C04B35/119—Composites with zirconium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
- C04B35/488—Composites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/597—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon oxynitride, e.g. SIALONS
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B2235/3222—Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
- C04B2235/3246—Stabilised zirconias, e.g. YSZ or cerium stabilised zirconia
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
- C04B2235/3445—Magnesium silicates, e.g. forsterite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3463—Alumino-silicates other than clay, e.g. mullite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
- C04B2235/445—Fluoride containing anions, e.g. fluosilicate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/447—Phosphates or phosphites, e.g. orthophosphate or hypophosphite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
- C04B2235/661—Multi-step sintering
- C04B2235/662—Annealing after sintering
- C04B2235/663—Oxidative annealing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Dispersion Chemistry (AREA)
- Conductive Materials (AREA)
Abstract
本发明的方面涉及一种静电耗散陶瓷元件，该元件含有稳定的氧化锆基体，表面电阻率为1×105至1×1012欧姆/平方，包含至少2体积％的散射材料。所述稳定的氧化锆的的含量可为60-95重量％。本发明的另外方面涉及一种静电耗散陶瓷材料，该材料包含稳定的氧化锆、电阻率调节剂和散射材料。稳定的氧化锆的含量可占陶瓷材料的60-95重量％。电阻率调节剂的含量可为5-30重量％，散射材料可至少占所述静电耗散陶瓷材料的2体积％。该元件可用来制造硬盘驱动器之类的电子元件。
Description
技术领域
本发明一般地涉及陶瓷材料，该陶瓷材料具有用于静电电荷安全放电的静电放电耗散性质。
背景技术
在日益进步的科技时代，静电放电可以是代价高或危险的。静电放电(ESD)会引燃易燃材料，破坏电子元件，向清洁的环境中吸引玷污物，或者使产品粘在一起。这些效应可造成重大的损失。
静电电荷可以在摩擦起电过程中产生。在这些摩擦起电过程中，互相接触的表面上产生了相反的电荷。当这些表面分离时，不同的电荷仍然保留下来。电荷也可以通过磁场或其它过程产生。
当这些静电电荷放电时，可能会对敏感的电子装置造成破坏。静电放电可能会改变半导体装置的电性质，从而降低其性能或对其造成破坏。静电放电还会影响电子系统的运行，造成仪器故障或失灵。在清洁房间内，带电的表面会吸引和固定玷污物，使得难以从环境中除去这些玷污物。静电电荷还会将玷污物吸引到硅片或电子线路表面上。这些玷污物会产生随机的缺陷，从而降低产率。静电放电还会在织物(web)制造过程和易燃粉末制造过程中造成危险。
ESD对产品的破坏可造成重大的经济损失。估计每年电子工业中ESD破坏所造成的损失高达数十亿美元。如果包括相关的维修、重新加工、运输、劳力和管理费用，ESD造成的经济损失是更大的。
对ESD的控制在电子工业中特别重要，但是要求较高，需要能够成功用于各种自动化电子生产过程的高密度而坚固的ESD安全材料。
由于上述原因，通常需要提供一种改进的静电放电耗散材料，该材料应具有适用于包括电子工业在内的高要求用途的性质。
发明内容
本发明的方面涉及一种静电耗散陶瓷元件，该元件具有稳定的氧化锆基体(base)，该元件的表面电阻率为1×105至1×1012欧姆/平方(square)，包含至少2 体积％的散射材料。所述稳定的氧化锆的的含量可为60-95重量％。
本发明的另外方面涉及一种静电耗散陶瓷材料，该材料包含稳定的氧化锆、电阻率调节剂和散射材料。稳定的氧化锆的含量可为陶瓷材料的60-95重量％。电阻率调节剂的含量可为5-30重量％，散射材料可至少占所述静电耗散陶瓷材料的2体积％。
本发明的其它方面涉及制造电子元件的方法。该方法包括提供用来支承电子元件的支承装置，和对电子元件进行加工。该支承装置的材料包含60-95重量％稳定的氧化锆和至少2体积％的散射材料。该支承装置的表面电阻率可为1×105至1×1012欧姆/平方。
本发明的方面还涉及制造硬盘驱动器的方法。该方法包括为硬盘驱动器元件提供支承物，并对硬盘驱动器元件进行加工。该支承物包含一种静电耗散材料，该材料包含65-90重量％的稳定的氧化锆和至少2体积％的散射材料。该支承装置的表面电阻率可为1×105至1×1012欧姆/平方。
附图说明
结合这些附图，可以更好地理解本发明，并使其各个目的、特征和优点对本领域的技术人员显而易见。
图1比较参比材料和示例材料的漫反射系数。
图2说明添加剂对漫反射系数的影响。
图3显示添加剂对亮度L*的影响。
在不同的图中，对相近或相同的对象使用相同的指示符号。
具体实施方式
根据本发明的一个实施方式，提供一种包含稳定的二氧化锆基体和散射材料的静电耗散陶瓷元件。所述稳定的氧化锆基体占该元件的60-95重量％，所述散射材料占该元件的2体积％。该元件还可包含电阻率调节剂。静电耗散陶瓷元件的表面电阻率为1×105至1×1012欧姆/平方，其体电阻率可为1×104至1×1011欧姆厘米。
所述稳定的氧化锆可用2.6-10摩尔％的稳定金属氧化物进行稳定。该稳定剂包括氧化钇，氧化钪，稀土元素氧化物例如镧、铈、钪、钕、镱、铒、钆、钐和镝的氧化物之类的稀土氧化物，以及氧化镁与氧化钙之类的碱土氧化物。 更具体地说，氧化钇的用量可为2-10摩尔％，在一些情况下为2.5-4.5摩尔％，具体的例子为2.6、2.8和3.0摩尔％。氧化钇部分稳定的氧化锆(Y-PSZ)具有极好的机械性能，这是由于氧化锆部分为四方结构。这些机械性能在ESD安全材料中是有益的，这是因为它们能够用来有益地发挥结构功能。
在一个实施方式中，散射材料具有浅的颜色、低的折射率，而且对陶瓷加工的严酷作用具有稳定性。在例如陶瓷加工过程中经历的条件下，该材料应当基本不与陶瓷基体和任何减小电阻率的材料反应。这种散射材料可包括钇铝石榴石(YAG)、铝酸锌、铝酸镁、磷酸钇之类的稳定磷酸盐、硅酸镁之类的稳定硅酸盐、硅铝酸铍之类的稳定硅铝酸盐和氟化钙之类的稳定氟化物。这些材料本身可以加入将要烧结的混合料，或者也可以它们的组成部分加入，使其在其中反应生成该种材料。例如，向氧化锆中加入氧化铝和氧化锌的混合物，在烧结过程中可生成铝酸锌。
所述散射材料的折射率与基体陶瓷材料可显著不同。折射率可至少相差0.25。然而，折射率也可相差0.3、0.5或更多。例如YAG、铝酸锌和铝酸镁的折射率分别为1.83、1.879、1.72。这些折射率与氧化锆的折射率(2.2)至少相差0.25。
下表示例性地列出了散射材料的折射率。
| 材料 | 折射率 |
| YAG | 1.83 |
| 铝酸锌 | 1.879 |
| 铝酸镁 | 1.72 |
| YPO4 | 1.77 |
| Mg2SiO4 | 1.65 |
| Be3Al2Si6O18 | 1.58 |
| CaF2 | 1.43 |
这些散射材料还应基本不与基体陶瓷材料和任何的电阻率调节剂反应，散射材料的熔点要高于陶瓷加工温度。例如，在高达1200℃或1400℃的条件下，在3％氧化钇稳定的氧化锆和氧化锌存在下，钇铝石榴石(YAG)是稳定的。另一方面，在这些条件下，氧化铝之类的散射材料则会与氧化锌反应形成铝酸锌。因此，优选的散射材料将随着基体材料、电阻率调节剂和加工条件改变。
散射材料的粒度会影响该材料的效果。大颗粒尺寸散射光线的效果较差，小颗粒尺寸的散射效果也较差。当散射材料的粒度为50纳米至5微米(im)时，效果最佳。粒度也可为0.2微米至2微米。
一种示例性的元件可为在可见波长的特定范围内具有较高漫反射系数的浅色元件。根据CIE1976L*a*b标度(scale)，该元件的亮度L*可约大于50。亮度可大于75或80。该元件在可见光的蓝色和绿色区域中应具有较高的漫反射系数。例如，在450纳米处的漫反射系数可大于20。
一种示例性的元件还可相对密实(dense)并具有高的强度。相对密度可大于理论密度的95％。例如，相对密度可不小于理论密度的98、99或99.5％。根据在3毫米×4毫米×50毫米的棒上的4点测试，强度至少可为600兆帕。例如，强度可为700兆帕、800兆帕、900兆帕或高于1100兆帕。
单独使用氧化锆会具有过高的电阻率，从而无法减少静电积累，无法安全放电。可用添加剂来降低电阻率。根据用途，优选的电阻率可在1×105至1×1012 欧姆/平方(表面电阻率)和1×104至1×1011欧姆厘米(体电阻率)的范围内变化。添加剂形成导体或半导体分离晶粒相，该相在基体组合物内形成独立的第二相。电阻率调节剂可包括例如金属氧化物、金属碳化物、金属氮化物、金属氧碳化物、金属氮氧化物和金属氧碳氮化物等材料。下表提供了基体材料和电阻率调节添加剂的各种组合。不同的电阻率调节剂或各种电阻调节剂与基体材料的组合会对材料的电阻率产生不同的影响。另外，各种材料和材料的组合会对给定波长下的漫反射系数或颜色亮度产生不同的影响。例如，氧化锌(ZnO)是特别有效的用于氧化锆基体材料的添加剂。然而，ZnO对于氧化铝之类的其它基体材料可能会有不同的效果，或者可能会与这些其它基体材料发生反应。
在各种示例性的实施方式中，电阻率调节剂的加入量可为10-40体积％。例如，可向Y-PSZ中加入15-35体积的氧化锌。在其它例子中，LaMNO3的加入量可为20-30体积％，LaCrO3的加入量可为10-40体积％，ZrC的加入量可为10-25体积％，BaO.6Fe2O3的加入量在25体积％附近。在一个具有氧化钇稳定的韧性氧化锆多晶(Y-TZP)基体材料的实施方式中，可优选使用氧化锡和氧化锌，这是由于它们价格较为便宜、毒性较低、颜色较浅。
在一个特定的实施方式中，静电耗散陶瓷元件可包含70-85重量％稳定的氧化锆、15-25重量％的氧化锌和大于2体积％的YAG。
在另一个特殊的实施方式中，静电耗散陶瓷材料可包含60-90重量％稳定的氧化锆、5-30重量％的电阻率调节剂和至少2体积％的散射材料。根据电阻率调 节剂种类、电阻率调节剂的量和加工条件等因素，材料的表面电阻率可为1×105至1×1012欧姆/平方。体电阻率可为1×104至1×1011欧姆厘米。按照CIE1976L*a*b标度(scale)，该元件的亮度L*可约大于50。该材料在450纳米还可具有大于20的漫反射系数。材料的相对密度可大于95、98或99％。
在另一个示例性的实施方式中，所述陶瓷材料可包含60-95重量％的氧化锆和分散材料。表面电阻率可为1×105至1×1012欧姆/平方(square)。所含的散射材料的折射率与氧化锆的折射率至少相差0.25。体电阻率为1×104至1×1011欧姆厘米。该静电耗散陶瓷材料可具有大于50的亮度L*，在450纳米的漫反射系数可大于20。该材料还可具有大于98的密度。
另一个静电耗散陶瓷材料的例子的表面电阻率为1×105至1×1012欧姆/平方，相对密度至少为98，包含陶瓷基体和0.2-10重量％的散射材料。该散射材料可为YAG、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍或氟化钙。该散射材料可为磷酸盐、硅酸盐、硅铝酸盐或氟化物。
根据本发明的一个方面，某些工具、支架之类的元件和部件用ESD安全的即静电耗散材料制成。强度足够大、足够机械牢固的ESD安全材料倾向于是密实即低孔隙率的。本发明可得到例如浅色密实的陶瓷。本工业中的许多加工都通过视觉系统实现了自动化。这些视觉系统通常依靠材料间的差异来有效确定部件的位置。如果部件、工具、自动化机械和制造表面之间有强烈的差异，会改进这些自动化系统的操作。例如磁性记录头基本上是黑色的。使用浅色的ESD耗散工具可以改进视觉系统的光学识别能力和性能。
本发明的另一方面涉及制造电子元件的方法。该方法包括提供用来支承电子元件的支承装置，并对该电子元件进行加工。该支承装置的材料包含60-95重量％稳定的氧化锆和至少2体积％的散射材料。该支承装置的表面电阻率可为1×105至1×1012欧姆/平方。
所述支承装置可以是夹具、工具、支架或其它制造部件。在一个例子中，所述电子元件为磁阻头。加工可包括对磁阻头支承面进行磨光或机械加工。
本发明的其它方面涉及制造硬盘驱动器的方法。该方法包括为硬盘驱动器元件提供支承物，并对硬盘驱动器元件进行加工。该支承物包含一种静电耗散材料，该材料包含65-90重量％稳定的氧化锆和至少2体积％的散射材料。该静 电耗散材料的表面电阻率可为1×105至l×1012欧姆/平方。
该硬盘驱动器元件可以是例如磁阻头。加工可包括磨光、机械加工以及采集(pick)和安放(place)过程。支承物可以是夹具。
实施例
实施例1
将3摩尔％氧化钇稳定的氧化锆、氧化锌和钇铝石榴石粉末混合起来，其中这三种组分的含量分别为70重量％、17.5重量％和12.5重量％。还制备了参比样，该参比样包含82％钇稳定的氧化锆和18％的氧化锌。将参比样和样品压成圆片，在1400℃烧制1小时，再在1350℃的氩气气氛下、在200兆帕压力进行热等静压45分钟。该方法制得了相对密度大于98％的样品和参比样品。然后在650℃的空气气氛下对样品进行退火，直至表面电阻超过
用伊利诺斯州Bensonville的Prostat公司生产的PRF-912表面电阻探针测量表面电阻。结果列于下表。
| 样品 | ZrO2-Y2O3 | ZnO | YAG | 表面电阻 (MW) |
| 参比样品 (不含YAG) | 82 | 18 | 0 | 2.4 |
| S1 | 70 | 17.5 | 12.5 | 4.5 |
用弗吉尼亚州的Hunter Associates Laboratory of Reston制造的Miniscan XE脉冲分光计测量样品和参比样品的漫反射系数。如图1所示，样品S1的漫反射系数平均高于参比材料的漫反射系数。具体来说，在光谱的蓝端，样品的漫反射系数显著地大于参比材料。CIEL*a*b值列于下表。L*测量值显示了亮度并在0-100之间变化，其中100为白色，1为黑色。当a*测量值为正值时表示红色，当其为负值时，表示绿色。当b*测量值为正值时表示黄色，当其为负值时，表示蓝色。样品的亮度与参比样品接近。然而，样品显示比参比样品更多的红色和更少的黄色。
| 样品 | L* | a* | b* |
| S1 | 80.84 | -2.30 | 9.56 |
| 参比样品 | 78.78 | -0.58 | 41.53 |
实施例2
按照与实施例1相同的操作过程制备了大量样品。这些样品的组成列于下 表。在每种样品中，材料的平衡是18.7重量％氧化锌和81.3重量％氧化锆的混合物。表的最后一列是散射材料添加剂的体积分数，假定散射材料与样品其它组分没有显著的互溶度。又是在忽略互溶的情况下，与添加剂一起另外加入氧化锌，将氧化锌的体积分数保持在20％。
| 样品名 | 重量％ YAG | 重量％ ZnAl2O4 | 重量％ MgAl2O4 | 加入混合物的重量％ZnO， 用以保持20体积％ZnO | Eq体积％ 添加剂 |
| 1RM3- | 0.23 | 0.07 | 0.3 | ||
| 2RM3- | 0.23 | 0.07 | 0.3 | ||
| 5RM3- | 0.78 | 0.24 | 1 | ||
| 6RM3- | 0.78 | 0.24 | 1 | ||
| 9RM3- | 2.36 | 0.71 | 3 | ||
| 10RM3- | 2.36 | 0.71 | 3 | ||
| 13RM3- | 7.99 | 2.41 | 10 | ||
| 14RM3- | 7.99 | 2.41 | 10 | ||
| 23RM3- | 7.92 | 2.41 | 10 | ||
| 25RM3- | 6.27 | 2.41 | 10 |
热等静压处理之后，对样品表面进行磨光，并在空气中、650℃下对样品进行加热，直至表面电阻超过1
用Miniscan XE脉冲分光计测定漫反射系数，CIEL*，a*，b*标度列于下表。表面电阻显示出从1.16至703的变化。L* 测量值为75.14至85.79。a*测量值是-1.71至1.15，b*测量值为10.85至40.34。在450纳米的漫反射系数为20.2-43.27。这些结果的图表形式见图2和3。
| 样品名 | 表面电阻 (MW) | L* | a* | b* | 在450纳米的 漫反射系数 |
| RM3-1 | 45.3 | 75.54 | 0.96 | 38.76 | 20.22 |
| RM3-2 | 13.7 | 75.8 | -0.7 | 36.23 | 21.76 |
| RM3-5 | 1.56 | 77.55 | -1.11 | 34.11 | 24.96 |
| RM3-6 | 3.93 | 78.9 | -0.58 | 35.27 | 25.54 |
| RM3-9 | 34.1 | 81.26 | 2.11 | 40.34 | 24.07 |
| RM3-10 | 11.3 | 80.76 | -0.95 | 33.42 | 28.63 |
| RM3-13 | 3.52 | 79.82 | -0.91 | 21.05 | 37.1 |
| RM3-14 | 10.9 | 82.98 | -1.71 | 19.01 | 43.27 |
| RM3-22 | 0.012 | 82.9 | -3.91 | 23.35 | 39.12 |
| RM3-23 | 1.16 | 85.79 | 1.15 | 36.84 | 28.51 |
| RM3-25 | 703 | 75.14 | -2.16 | 10.85 | 39.63 |
图2显示散射材料添加剂对450纳米的漫反射系数的影响。横轴表示添加剂的体积百分数，纵轴表示漫反射的百分数。随着YAG体积百分数的增加，漫反射系数从20％增加到最高43.27％。当加入大约10体积％的铝酸锌或铝酸镁时，450纳米处的漫反射系数分别为28.51和39.63。甚至较小量的钇铝石榴石，对漫反射系数也有影响。添加剂含量优选大于2体积％。
图3说明添加剂对亮度L*的影响。横轴表示添加剂的体积百分数，纵轴表示L*。同样地，随着YAG含量的增加，L*值增大。当铝酸锌含量为10体积％时， L*＝85.79，当铝酸镁含量为10体积％时，L*＝75.14。在这些实施例中，添加剂的粒度小于5微米。粒度通常可为0.05-5微米，较佳的是0.2-2微米。
Claims (26)
1.一种静电耗散陶瓷元件，所述元件具有1×105至1×1012欧姆/平方的表面电阻率，在450纳米处的漫反射系数大于20％，其包含：65-90重量％稳定的氧化锆、且包含2-10体积％的散射材料，所述散射材料的折射率比氧化锆的折射率至少小0.25，还包含5-30重量％的电阻率调节剂，所述散射材料选自下组：钇铝石榴石、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍和氟化钙。
2.如权利要求1所述的静电耗散陶瓷元件，其特征在于，体电阻率为1×104至1×1011欧姆厘米。
3.如权利要求1所述的静电耗散陶瓷元件，根据CIE 1976L*a*b*标度，所述元件的亮度L*大于50。
4.如权利要求1所述的静电耗散陶瓷元件，根据CIE 1976L*a*b*标度，所述元件的亮度L*大于75。
5.如权利要求1所述的静电耗散陶瓷元件，所述元件具有大于95％理论密度的密度。
6.如权利要求1所述的静电耗散陶瓷元件，所述元件具有大于98％理论密度的密度。
7.如权利要求1所述的静电耗散陶瓷元件，所述元件具有大于99％理论密度的密度。
8.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料的粒度为0.05-5微米。
9.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料的粒度为0.2-2微米。
10.如权利要求1所述的静电耗散陶瓷元件，其特征在于，所述散射材料具有高于1200℃的熔点，且在1200℃基本不与氧化锆反应。
11.如权利要求1所述的静电耗散陶瓷元件，所述元件还包含选自下组的电阻率调节剂：氧化锌、氧化锡、氧化铟、氧化镓和氧化镉。
12.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度大于600兆帕。
13.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度至少为800兆帕。
14.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度至少为900兆帕。
15.如权利要求1所述的静电耗散陶瓷元件，所述元件根据4点弯曲测试法测得的弯曲强度至少为1100兆帕。
16.一种制造电子元件的方法，所述方法包括：
提供用来支承电子元件的支承装置，所述支承装置包含65-90重量％稳定的氧化锆，2-10体积％的散射材料和5-30重量％的电阻率调节剂，其中所述散射材料的折射率比氧化锆的折射率至少小0.25，所述支承装置的表面电阻率为1×105至1×1012欧姆/平方，在450纳米处的漫反射系数大于20％，所述散射材料选自下组：钇铝石榴石、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍和氟化钙；和
对所述电子元件进行加工。
17.如权利要求16所述的方法，其特征在于，所述支承装置为载体。
18.如权利要求16所述的方法，其特征在于，所述支承装置为夹具。
19.如权利要求16所述的方法，其特征在于，所述电子元件为磁阻头。
20.如权利要求16所述的方法，其特征在于，所述加工为磨光。
21.如权利要求16所述的方法，其特征在于，所述加工为对磁阻头支承面进行机械加工。
22.一种制造硬盘驱动器的方法，所述方法包括：
提供用来支承硬盘驱动器元件的支承物，所述支承物包含静电耗散材料，所述静电耗散材料包含65-90重量％稳定的氧化锆，2-10体积％的散射材料和5-30重量％的电阻率调节剂，其中所述散射材料的折射率比氧化锆的折射率至少小0.25，所述静电耗散材料的表面电阻率为1×105至1×1012欧姆/平方，在450纳米处的漫反射系数大于20％，所述散射材料选自下组：钇铝石榴石、铝酸锌、铝酸镁、磷酸钇、硅酸镁、硅铝酸铍和氟化钙；和
对所述硬盘驱动器元件进行加工。
23.如权利要求22所述的方法，其特征在于，所述硬盘驱动器元件为磁阻头。
24.如权利要求22所述的方法，其特征在于，所述加工为磨光。
25.如权利要求22所述的方法，其特征在于，所述加工为采集和安放过程。
26.如权利要求22所述的方法，其特征在于，所述支承物为夹具。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/442,616 | 2003-05-21 | ||
| US10/442,616 US6946417B2 (en) | 2003-05-21 | 2003-05-21 | Light-colored ESD safe ceramics |
| PCT/US2004/016130 WO2004105052A1 (en) | 2003-05-21 | 2004-05-20 | Light-colored esd safe ceramics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1795515A CN1795515A (zh) | 2006-06-28 |
| CN1795515B true CN1795515B (zh) | 2011-03-09 |
Family
ID=33450247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200480013963XA Expired - Fee Related CN1795515B (zh) | 2003-05-21 | 2004-05-20 | 浅色静电放电安全陶瓷 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6946417B2 (zh) |
| JP (1) | JP4861169B2 (zh) |
| KR (1) | KR100710029B1 (zh) |
| CN (1) | CN1795515B (zh) |
| MY (1) | MY137542A (zh) |
| TW (1) | TWI236681B (zh) |
| WO (1) | WO2004105052A1 (zh) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6669871B2 (en) * | 2000-11-21 | 2003-12-30 | Saint-Gobain Ceramics & Plastics, Inc. | ESD dissipative ceramics |
| US6958303B2 (en) * | 2003-05-30 | 2005-10-25 | Dou Yee Technologies Pte Ltd. | Electro-static dissipative ceramic products and methods |
| JP5325518B2 (ja) * | 2008-07-22 | 2013-10-23 | ショット アクチエンゲゼルシャフト | 透明セラミック及びその製造方法ならびにその透明セラミックスを用いた光学素子 |
| EP2377506B1 (en) * | 2010-04-16 | 2014-08-13 | Ivoclar Vivadent AG | Composite ceramic material comprising zirconia |
| CN106145938A (zh) * | 2015-04-27 | 2016-11-23 | 深圳市商德先进陶瓷有限公司 | 氧化锆复合陶瓷及其制备方法 |
| JP6605148B2 (ja) * | 2016-08-02 | 2019-11-13 | 三井金属鉱業株式会社 | 希土類リン酸塩粒子、それを用いた散乱性向上方法 |
| CN107555990A (zh) * | 2017-09-12 | 2018-01-09 | 潮州三环（集团）股份有限公司 | 一种白色陶瓷 |
| RU2665734C1 (ru) * | 2017-11-13 | 2018-09-04 | Федеральное государственное бюджетное учреждение науки Институт металлургии и материаловедения им. А.А. Байкова Российской академии наук (ИМЕТ РАН) | Керамический материал с низкой температурой спекания на основе диоксида циркония тетрагональной модификации |
| CN107986781B (zh) * | 2017-11-30 | 2020-08-11 | 深圳市商德先进陶瓷股份有限公司 | 防静电陶瓷及其制备方法和应用 |
| JP7089175B2 (ja) * | 2018-06-20 | 2022-06-22 | 日亜化学工業株式会社 | セラミックス複合体、それを用いた発光装置及びセラミックス複合体の製造方法 |
| CN108975891B (zh) * | 2018-08-27 | 2021-11-05 | 佛山石湾鹰牌陶瓷有限公司 | 喷墨渗花玉质抛光砖及其制备方法 |
| CN116283280A (zh) * | 2023-03-29 | 2023-06-23 | 合肥商德应用材料有限公司 | 氧化锆基复合陶瓷和陶瓷吸嘴 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296421A (en) * | 1991-12-25 | 1994-03-22 | Sumitomo Chemical Company, Limited | Method for producing zirconia-based sintered body |
| CN1167657A (zh) * | 1996-04-04 | 1997-12-17 | E·O·帕通电子焊接研究院电子束工艺国际中心 | 基体上制备有跨厚度化学组成和结构梯度并陶瓷外层方法 |
| US5994250A (en) * | 1995-11-07 | 1999-11-30 | Ngk Spark Plug Company Limited | Sintered ceramic bodies and ceramic working tools |
| CN1290239A (zh) * | 1997-09-10 | 2001-04-04 | 联合讯号公司 | 氧化锆基料的结构性材料的水法注模方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3726700A (en) * | 1971-03-19 | 1973-04-10 | Du Pont | Composite pigments and their preparation |
| US4316964A (en) * | 1980-07-14 | 1982-02-23 | Rockwell International Corporation | Al2 O3 /ZrO2 ceramic |
| JPS60161374A (ja) * | 1984-01-26 | 1985-08-23 | 東レ株式会社 | 部分安定化ジルコニア焼結体 |
| CA1268489A (en) * | 1986-01-24 | 1990-05-01 | Walter W. Henslee | Ceramic composites from chemically derived magnesium- aluminate and zirconium oxide |
| US5958813A (en) * | 1996-11-26 | 1999-09-28 | Kyocera Corporation | Semi-insulating aluminum nitride sintered body |
| US6274524B1 (en) * | 1997-04-25 | 2001-08-14 | Kyocera Corporation | Semiconductive zirconia sintering body and electrostatic removing member constructed by semiconductive zirconia sintering body |
| JP3669196B2 (ja) * | 1998-07-27 | 2005-07-06 | 日東電工株式会社 | 紫外線硬化型粘着シート |
| US6136232A (en) * | 1999-08-13 | 2000-10-24 | Xylon Ceramic Materials Inc. | Electro-static dissipative zirconia |
| US6669871B2 (en) * | 2000-11-21 | 2003-12-30 | Saint-Gobain Ceramics & Plastics, Inc. | ESD dissipative ceramics |
| NO20030254L (no) * | 2002-01-18 | 2003-07-21 | Ngk Spark Plug Co | Sintret zirkondioksydlegeme, slitasjebestandig element, lagerkule og element for optisk koblingsstykke |
| US6958303B2 (en) * | 2003-05-30 | 2005-10-25 | Dou Yee Technologies Pte Ltd. | Electro-static dissipative ceramic products and methods |
-
2003
- 2003-05-21 US US10/442,616 patent/US6946417B2/en not_active Expired - Lifetime
-
2004
- 2004-05-19 MY MYPI20041897A patent/MY137542A/en unknown
- 2004-05-20 CN CN200480013963XA patent/CN1795515B/zh not_active Expired - Fee Related
- 2004-05-20 WO PCT/US2004/016130 patent/WO2004105052A1/en active Application Filing
- 2004-05-20 KR KR1020057022093A patent/KR100710029B1/ko active IP Right Grant
- 2004-05-20 JP JP2006514929A patent/JP4861169B2/ja not_active Expired - Lifetime
- 2004-05-21 TW TW093114528A patent/TWI236681B/zh not_active IP Right Cessation
-
2005
- 2005-06-27 US US11/167,820 patent/US7094719B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5296421A (en) * | 1991-12-25 | 1994-03-22 | Sumitomo Chemical Company, Limited | Method for producing zirconia-based sintered body |
| US5994250A (en) * | 1995-11-07 | 1999-11-30 | Ngk Spark Plug Company Limited | Sintered ceramic bodies and ceramic working tools |
| CN1167657A (zh) * | 1996-04-04 | 1997-12-17 | E·O·帕通电子焊接研究院电子束工艺国际中心 | 基体上制备有跨厚度化学组成和结构梯度并陶瓷外层方法 |
| CN1290239A (zh) * | 1997-09-10 | 2001-04-04 | 联合讯号公司 | 氧化锆基料的结构性材料的水法注模方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI236681B (en) | 2005-07-21 |
| US6946417B2 (en) | 2005-09-20 |
| US7094719B2 (en) | 2006-08-22 |
| TW200506969A (en) | 2005-02-16 |
| JP2006526270A (ja) | 2006-11-16 |
| CN1795515A (zh) | 2006-06-28 |
| KR100710029B1 (ko) | 2007-04-27 |
| US20040235639A1 (en) | 2004-11-25 |
| JP4861169B2 (ja) | 2012-01-25 |
| KR20060017799A (ko) | 2006-02-27 |
| MY137542A (en) | 2009-02-27 |
| US20050266977A1 (en) | 2005-12-01 |
| WO2004105052A1 (en) | 2004-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1795515B (zh) | 浅色静电放电安全陶瓷 | |
| KR100553118B1 (ko) | 정전기 방전 소산성 세라믹 성분 | |
| KR101248969B1 (ko) | 용융 알루미나-지르코니아 입자의 혼합물 | |
| CN101018841B (zh) | 荧光体及其制造方法和发光器具 | |
| KR101402190B1 (ko) | 전계발광 장치 | |
| US7598661B2 (en) | Spark plug | |
| JP2004519407A5 (zh) | ||
| TW201437182A (zh) | 強散射性陶瓷轉換器及其製備方法 | |
| EP3553153B1 (en) | Ceramic composition | |
| JP5850450B2 (ja) | 高反射率セラミック基板 | |
| CN109716178A (zh) | 光波长转换部件及发光装置 | |
| CN101070242A (zh) | 透明的多晶氧化铝 | |
| KR102141347B1 (ko) | 세라믹스 소결체 | |
| KR102307670B1 (ko) | 광 파장 변환 부재 및 발광 장치 | |
| DE112019005815T5 (de) | Verfahren zur herstellung eines keramischen konverterelements, keramisches konverterelement und optoelektronisches bauelement | |
| TW201802229A (zh) | 螢光體及發光裝置 | |
| EP3534398B1 (en) | Heat-dissipating member and electronic device using same | |
| CN110167902B (zh) | 热处理用载置部件 | |
| CN111548794A (zh) | 氮化物荧光体的制造方法和氮化物荧光体 | |
| BRPI0713451A2 (pt) | vela de ignição | |
| US20200251620A1 (en) | Two Component Glass Body for Tape Casting Phosphor in Glass LED Converters | |
| JP2007223842A (ja) | アルミナ質焼結体及びこれを用いた磁気ヘッド加工組立用治具 | |
| FR3035346A1 (fr) | Outil de coupe pour l'usinage des materiaux abrasifs et notamment de materiaux a base de bois | |
| TWI716050B (zh) | 光波長轉換構件及發光裝置 | |
| US20180019224A1 (en) | Wedge bonding component |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110309 Termination date: 20110520 |