CN1747188A - Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer - Google Patents
Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer Download PDFInfo
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- CN1747188A CN1747188A CNA2004100739310A CN200410073931A CN1747188A CN 1747188 A CN1747188 A CN 1747188A CN A2004100739310 A CNA2004100739310 A CN A2004100739310A CN 200410073931 A CN200410073931 A CN 200410073931A CN 1747188 A CN1747188 A CN 1747188A
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 77
- 229910002601 GaN Inorganic materials 0.000 title claims description 75
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims description 65
- 239000011248 coating agent Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 47
- 229910052737 gold Inorganic materials 0.000 claims description 40
- 239000000428 dust Substances 0.000 claims description 36
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 20
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 16
- 239000011777 magnesium Substances 0.000 claims description 16
- 229910052763 palladium Inorganic materials 0.000 claims description 16
- 229910052697 platinum Inorganic materials 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 16
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 230000009977 dual effect Effects 0.000 claims description 10
- 229910018572 CuAlO2 Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- -1 LaCuOS Inorganic materials 0.000 claims description 8
- 229910001051 Magnalium Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910007486 ZnGa2O4 Inorganic materials 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims 12
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 238000005253 cladding Methods 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 4
- 229910052596 spinel Inorganic materials 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The GaN light emitting diode structure uses multiple doping of Mg and Al into Inj-yGayN P-type contacting layer with low resistance. It includes baseboard, buffer layer, N-type GaN layer, active layer, P-type cladding layer and P-type contacting layer. The invention can make Inj-yGayN with multiple doping of Mg and Al to develop a p-type contacting layer with low resistance.
Description
Technical field
The present invention relates to a kind of InGaN/gallium nitride multiple quantum trap structure light-emitting diode (InGaN/GaN MQW LEDs), particularly a kind of magnesium and common p type contact layer that mixes and can make low temperature growth InGaN (Inl-yGayN) low-resistance value of aluminium of utilizing.
Background technology
InGaN in the prior art/gallium nitride multiple quantum well structure (multiquantum well, MQW) light-emitting diode, the p type gallium nitride (GaN) that mainly utilizes the high temperature growth are as contact layer, and contact layer always is formed at active layers (luminescent layer) top usually.In actual manufacture process, find, high temperature growth contact layer, previous step low temperature growth active layers (luminescent layer) brilliant characteristic of heap of stone can not be kept, this effect, regularly arranged when crystalline substance promptly of heap of stone can not keep growing up not only makes the electric properties deteriorate of luminescent layer or conducts electricity the bad waste product that becomes, and then can influence whole assembly, must adopt high voltage is operating voltage, and the electrical power that the result consumes in the time of can making running increases.Therefore, before will overcoming, take off problem, still need a kind of new structure so that obtain low temperature growth low resistance p type contact layer.
Summary of the invention
Gallium nitride based multiple quantum well structure light-emitting diode problem in the prior art about aforementioned announcement, the present invention system provides a kind of gallium nitride based multiple quantum well structure light-emitting diode, but the p type contact layer that the InGaN (Inl-yGayN) that utilizes magnesium and the common doping of aluminium and low temperature to grow up is grown up.
Therefore primary and foremost purpose of the present invention is to make magnesium and the aluminium resistance value of InGaN (Inl-yGayN) growth p type contact layer of mixing jointly, and the resistance value of more traditional p type gallium nitride contact layer is low.Reason is that the present invention with aluminium doping growth p type contact layer, can increase two-dimentional electric hole carrier (carrier) and mobility (mobility) thereof, and InGaN has than the lower energy gap of gallium nitride, so can reach this purpose.
Still a further object of the present invention is to improve the material generation extinction problem of p type contact layer.Generally speaking, p type contact layer is in active layers (luminescent layer) top, so p type contact layer extinction can cause gallium nitride based multiple quantum well structure light-emitting diode luminous efficiency to reduce.And but magnesium of the present invention and aluminium mix InGaN p type contact layer jointly because low temperature growth p type contact layer, make gallium nitride based material side direction growth speed reduce and reach the effect of surface roughening, and then reduce light by the probability of total reflection, to improve the assembly luminous efficiency.
Another object of the present invention is for after providing making active layers (luminescent layer), and low temperature is made the simplicity of p type contact layer step, and makes whole electrical characteristics improve, and can reduce the operating voltage of black box, and the electrical power that consumes during its running lowers, and reaches to improve to produce yield.Because p type contact layer growth temperature of the present invention; than prior art p type contact layer; with the gallium nitride is that material is come lowly; so p type contact layer from InGaN active layers (luminescent layer) to InGaN (In1-yGayN) growth; all can adopt same low temperature grows up; and then protection InGaN luminescent layer, thereby improve the assembly whole lighting efficiency.
Description of drawings
Fig. 1 system has first embodiment of the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Fig. 2 system has second embodiment of the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Fig. 3 system has the 3rd embodiment of the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Fig. 4 system has the 4th embodiment of the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Among the figure
10 substrates, 11 resilient coatings
12 n type gallium nitride layers, 13 active layers
14 p type coatings, 15 p type contact layers
16 n type electrode layers, 17 p type electrode layers
20 substrates, 21 resilient coatings
22 n type gallium nitride layers, 23 active layers
24 p type coatings, 25 p type contact layers
26 n type electrode layers, 27 p type electrode layers
31 resilient coatings, 32 n type gallium nitride layers
33 active layers, 340 first coatings
342 second coatings, 35 p type contact layers
36 n type electrode layers, 37 p type electrode layers
41 resilient coatings, 42 n type gallium nitride layers
43 active layers, 440 first coatings
45 p type contact layers, 46 n type electrode layers
47 p type electrode layers
Embodiment
The object of the invention and plurality of advantages will describe in detail by following specific embodiment, and with reference to appended graphic, and disclosed fully.
Fig. 1 system has LED structure with gallium nitride system first embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.Have LED structure with gallium nitride system first embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention, it comprises: substrate 10, resilient coating (buffer layer) 11, n type gallium nitride layer 12, active layers 13, p type coating 14, p type contact layer 15.Substrate 10 materials can be by alumina single crystal (Sapphire) (comprising C-Plane, R-Plane and A-Plane), SiC (6H-SiC or 4H-SiC), Si, ZnO, GaAs and spinelle (MgAl2O4) are made, the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 11 on the substrate 10, its material is aluminum indium gallium nitride (Al1-x-yGaxInyN), wherein 0≤X＜1,0≤Y＜1.
Be positioned at the n type gallium nitride layer 12 on the resilient coating 11.Be positioned at the active layers 13 on the n type gallium nitride layer 12, its material is an InGaN.Be positioned at the p type coating 14 on the active layers 13, its material is the mix p type aluminum indium nitride (Al1-xInxN) of (Mg-doped) of magnesium, 0＜X＜1 wherein, but 0.1≤X≤0.4 be the best, its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degree Celsius are spent to 1100.Be positioned at the p type contact layer 15 on the p type coating 14, its material is mix the jointly p type InGaN (InyGa1-yN) of (Al-Mg-codoped) of magnalium, 0≤Y＜1 wherein, its thickness between between 200 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree.
LED structure with gallium nitride system first embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention can comprise further and is positioned on the n type gallium nitride layer 12 n type electrode layer 16.LED structure with gallium nitride system first embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention can comprise the p type electrode layer 17 that is positioned on the p type contact layer 15 further, and p type electrode layer 17 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, the metal conducting layer of WSix or oxidic, transparent, conductive layers (transparent conductive oxide layer, TCO) comprise ITO, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
Fig. 2 system has LED structure with gallium nitride system second embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.Have LED structure with gallium nitride system second embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention, it comprises: substrate 20, resilient coating 21, n type gallium nitride layer 22, active layers 23, p type coating 24, p type contact layer 25.
Substrate 20, its material can be by alumina single crystal (Sapphire) (comprising C-Plane, R-Plane and A-Plane), SiC (6H-SiC or 4H-SiC), Si, ZnO, GaAs and spinelle (MgAl2O4) are made, and the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 21 on the substrate 20, its material is aluminum indium gallium nitride (Al1-x-yGaxInyN), wherein 0≤X＜1,0≤Y＜1.Be positioned at the n type gallium nitride layer 22 on the resilient coating 21.Be positioned at the active layers 23 on the n type gallium nitride layer 22, its material is an InGaN.Be positioned at the p type coating 24 on the active layers 23, its material is mix the jointly aluminum indium nitride (Al1-xInxN) of (Mg-Ga-codoped) of magnesium gallium, 0＜X＜1 wherein, but 0.1≤X≤0.4 the best, its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degree Celsius are spent to 1100.Be positioned at the p type contact layer 25 on the p type coating 24, its material is mix the jointly p type InGaN (InyGa1-yN) of (Al-Mg-codoped) of magnalium, 0≤Y＜1 wherein, its thickness between between 200 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree.
LED structure with gallium nitride system second embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention comprises the n type electrode layer 26 that is positioned on the n type gallium nitride layer 22 further.LED structure with gallium nitride system second embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention can comprise the p type electrode layer 27 on the p type contact layer 25 further.P type electrode layer 27 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, (transparent conductive oxide layer TCO) comprises ITO for the metal conducting layer of WSix or the oxide layer of electrically conducting transparent, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
Fig. 3 system has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.The present invention has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer, and it comprises: substrate 30, resilient coating 31, n type gallium nitride layer 32, active layers 33, dual coating 34, p type contact layer 35.Substrate 30, its material can be by alumina single crystal (Sapphire) (comprising C-Plane, R-Plane and A-Plane), SiC (6H-SiC or 4H-SiC), Si, ZnO, GaAs and spinelle (MgAl2O4) are made, and the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 31 on the substrate 30, its material is aluminum indium gallium nitride (Al1-x-yGaxInyN), wherein 0≤X＜1,0≤Y＜1.N type gallium nitride layer 32 is positioned on the resilient coating 31.
Be positioned at the dual coating 34 on the active layers 33, it comprises: first coating, 340, the second coatings 342.Be positioned at first coating 340 on the active layers 33, it is the p type aluminum indium nitride (Al1-xInxN) of magnesium gallium doping (Mg-Ga-codoped), 0＜X＜1 wherein, but 0.1≤X≤0.4 the best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100.Be positioned at second coating 342 on first coating 340, it is the p type aluminum indium nitride (Al1-zInzN) of magnesium doping (Mg-doped), 0＜Z＜1 wherein, but 0.1≤Z≤0.4 the best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100.
P type contact layer 35, its material is mix the jointly InGaN (InyGa1-yN) of (Al-Mg-codoped) of magnalium, 0≤Y＜1 wherein, and it is positioned on the dual coating 34, its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degree Celsius are spent to 1100.
The present invention has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer, comprises the n type electrode layer 36 that is positioned on the n type gallium nitride layer 32 further.The present invention has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer, can comprise the p type electrode layer 37 that is positioned on the p type contact layer 35 further.P type electrode layer 37 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, (transparent conductive oxide layer TCO) comprises ITO for the metal conducting layer of WSix or oxidic, transparent, conductive layers, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
Fig. 4 system has LED structure with gallium nitride system the 4th embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.The present invention has LED structure with gallium nitride system the 4th embodiment of growth under low-temperature and low-resistance p type contact layer, and it comprises: substrate 40, resilient coating 41, n type gallium nitride layer 42, active layers 43, dual coating 44, p type contact layer 45.Substrate 40, its material can be by alumina single crystal (Sapphire) (comprising C-Plane, R-Plane and A-Plane), SiC (6H-SiC or 4H-SiC), Si, ZnO, GaAs and spinelle (MgAl2O4) are made, and the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 41 on the substrate 40, its material is aluminum indium gallium nitride (Al1-x-yGaxInyN), wherein 0≤X＜1,0≤Y＜1.N type gallium nitride layer 42 is to be positioned on the resilient coating 41.
Be positioned at the active layers 43 on the n type gallium nitride layer 42, its material is an InGaN.
Be positioned at the dual coating 44 on the active layers 43, it comprises: first coating 440 and second coating 442.Be positioned at first coating 440 on the active layers 43, it is the p type aluminum indium nitride (Al1-xInxN) of magnesium doping (Mg-doped), 0＜X＜1 wherein, but 0.1≤X≤0.4 is best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100.Be positioned at second coating 442 on first coating 440, it is mix the jointly p type aluminum indium nitride (Al1-zInzN) of (Mg-Ga codoped) of magnesium gallium, 0＜Z＜1 wherein, 0.1≤Z≤0.4 the best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100.
Be positioned at the p type contact layer 45 on the dual coating 44, its material is mix the jointly p type InGaN (InyGa1-yN) of (Al-Mg-codoped) of magnalium, 0≤Y＜1 wherein, its thickness between between 200 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree.
The present invention has LED structure with gallium nitride system the 4th embodiment of growth under low-temperature and low-resistance p type contact layer, comprises the n type contact layer 46 that is positioned on the n type gallium nitride layer 42 further.LED structure with gallium nitride system the 4th embodiment of the present invention comprises the electrode layer 47 that is positioned on the p type contact layer 45 further.Electrode layer 47 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, the metal conducting layer of WSix or oxidic, transparent, conductive layers (transparent conductive oxide layer, TCO), it comprises ITO, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
The above is preferred embodiment of the present invention only for this paper, is not in order to limiting claim of the present invention, and any other all change or modification that does not break away from disclosed spirit and finish all should belong to claim of the present invention.
Claims (16)
1. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material can comprise C-Plane, R-Plane and A-Plane, SiC by alumina single crystal, be 6H-SiC or 4H-SiC, Si, ZnO, GaAs and spinelle are made, or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor, but generally use Sapphire and SiC;
One resilient coating, its material is an aluminum indium gallium nitride, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is to be positioned on this resilient coating;
One active layers, its material is an InGaN, is positioned on this n type gallium nitride layer;
One p type coating is positioned on this active layers, and its material is a magnesium doped p type aluminum indium nitride, 0＜X＜1,0.1≤X≤0.4 the best wherein, its thickness between between 50 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree; And
One p type contact layer is positioned on this p type coating, and its material is the common doped p type of a magnalium InGaN, 0≤Y＜1 wherein, its thickness between between 200 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree.
2. light emitting diode construction according to claim 1 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
3. light emitting diode construction according to claim 1 comprises a p type electrode layer further, is positioned on this p type contact layer.
4. according to claim 1 or 3 described light emitting diode constructions, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, and wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
5. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material can comprise C-Plane, R-Plane and A-Plane, SiC by alumina single crystal, be 6H-SiC or 4H-SiC, Si, ZnO, GaAs and spinelle are made, or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor, but generally use Sapphire and SiC;
One resilient coating, its material is an aluminum indium gallium nitride, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is to be positioned on this resilient coating;
One active layers, its material is an InGaN, is positioned on this n type gallium nitride layer;
One p type coating, its material are the common aluminum indium nitride that mixes of magnesium gallium, 0＜X＜1 wherein, but 0.1≤X≤0.4 the best is positioned on this active layers, its thickness between between 50 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree; And
One p type contact layer, its material are the common doped p type of magnalium InGaN, and wherein 0≤Y＜1 is positioned on this p type coating, and its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degree Celsius are spent to 1100.
6. light emitting diode construction according to claim 5 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
7. light emitting diode construction according to claim 5 comprises a p type electrode layer further, is positioned on this p type contact layer.
8. light emitting diode construction according to claim 7, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, and wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
9. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material can comprise C-Plane, R-Plane and A-Plane, SiC by alumina single crystal, be 6H-SiC or 4H-SiC, Si, ZnO, GaAs and spinelle are made, or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor, but generally use Sapphire and SiC;
One resilient coating, its material is an aluminum indium gallium nitride, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is to be positioned on this resilient coating;
One active layers, its material is an InGaN, is positioned on this n type gallium nitride layer;
One dual coating is to be positioned on this active layers, and it comprises:
One first coating is magnesium gallium doped p type aluminum indium nitride, wherein 0≤X＜1,0.1≤X≤0.4 the best, the best is positioned on this active layers, and its thickness is between between 50 dust to 3000 dusts, 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100; And
One second coating is magnesium doped p type aluminum indium nitride, wherein 0≤Z＜1,0.1≤Z≤0.4 the best is positioned on this first coating, its thickness is between between 50 dust to 3000 dusts, 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100; And
One p type contact layer, material are the common InGaN that mixes of magnalium, 0≤Y＜1 wherein, it is positioned on this dual coating, its thickness between between 200 dust to 3000 dusts, and its growth temperature between 600 degree Celsius between 1100 degree.
10. light emitting diode construction according to claim 9 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
11. light emitting diode construction according to claim 9 comprises a p type electrode layer further, is positioned on this p type contact layer.
12. according to the light emitting diode construction of claim 11 described 1, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
13. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material can comprise C-Plane, R-Plane and A-Plane, SiC by alumina single crystal, be 6H-SiC or 4H-SiC, Si, ZnO, GaAs and spinelle are made, or lattice constant approaches the monocrystalline oxide of nitride-based semiconductor, but generally use Sapphire and SiC;
One resilient coating, its material is an aluminum indium gallium nitride, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is to be positioned on this resilient coating;
One active layers, its material is an InGaN, is positioned on this n type gallium nitride layer;
One dual coating is to be positioned on this active layers, and it comprises:
One first coating is a magnesium doped p type aluminum indium nitride, and wherein 0＜X＜1,0.1≤X≤0.4 the best is positioned on this active layers, its thickness between between 50 dust to 3000 dusts, 50 dust to 1000 dust the bests, and its growth temperature between Celsius 600 the degree to 1100 the degree between; And
One second coating is the common doped p type of magnesium gallium aluminum indium nitride, wherein 0＜Z＜1,0.1≤Z≤0.4 the best is positioned on this first coating, its thickness is between between 50 dust to 3000 dusts, 50 dust to 1000 dust the bests, and its growth temperature is between 600 degree Celsius are spent to 1100; And
One p type contact layer, its material are the common doped p type of magnalium InGaN, and wherein 0≤Y＜1 is positioned on this dual coating, and its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degree Celsius are spent to 1100.
14. light emitting diode construction according to claim 13 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
15. light emitting diode construction according to claim 13 comprises a p type electrode layer further, is positioned on this p type contact layer.
16. light emitting diode construction according to claim 15, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, and wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx, WSix, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa2O4, SnO2:Sb, Ga2O3:Sn, AgInO2:Sn, In2O3:Zn, CuAlO2, LaCuOS, NiO, CuGaO2, SrCu2O2.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101330118B (en) * | 2007-06-22 | 2010-06-09 | 晶能光电（江西）有限公司 | Method for producing p type semiconductor structure |
| CN102255025A (en) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100244208B1 (en) * | 1997-02-12 | 2000-02-01 | 구자홍 | Light emitting diode and method for fabricating the same |
| JP2004006957A (en) * | 1999-02-05 | 2004-01-08 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor equipment |
| CN1134849C (en) * | 1999-09-20 | 2004-01-14 | 晶元光电股份有限公司 | Light emitting diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330118B (en) * | 2007-06-22 | 2010-06-09 | 晶能光电（江西）有限公司 | Method for producing p type semiconductor structure |
| CN102255025A (en) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode |
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