CN102255025A - Light emitting diode - Google Patents

Light emitting diode Download PDF

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Publication number
CN102255025A
CN102255025A CN2010101760865A CN201010176086A CN102255025A CN 102255025 A CN102255025 A CN 102255025A CN 2010101760865 A CN2010101760865 A CN 2010101760865A CN 201010176086 A CN201010176086 A CN 201010176086A CN 102255025 A CN102255025 A CN 102255025A
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China
Prior art keywords
type electrode
emitting diode
light
layer
type
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CN2010101760865A
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Chinese (zh)
Inventor
吴芃逸
黄世晟
凃博闵
杨顺贵
黄嘉宏
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to CN2010101760865A priority Critical patent/CN102255025A/en
Publication of CN102255025A publication Critical patent/CN102255025A/en
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Abstract

The invention relates to a light emitting diode. The light emitting diode comprises: a substrate; a buffer layer, which is on the substrate; an N type semiconductor layer, which is on the buffer layer; a luminescent layer, which is on the N type semiconductor layer; a P type semiconductor layer, which is on the luminescent layer; a transparent conducting layer, which is on the P type semiconductor layer; a P type electrode, which is on the transparent conducting layer; and an N type electrode, which is on the N type semiconductor layer. The P type electrode comprises a first P type electrode and a transparent second P type electrode. Compared with the prior art, the technology employed in the invention enables the light emitting diode to be provided with the second P type electrode that has a characteristic of light transmission, so that lights emitted by the light emitting diode can pass through the diode, thereby substantially improving the luminous efficiency of the light emitting diode.

Description

Light-emitting diode
Technical field
The present invention relates to a kind of semiconductor light-emitting elements, particularly a kind of light-emitting diode with high light-emitting efficiency.
Background technology
As a kind of emerging light source, light-emitting diode relies on advantages such as its luminous efficiency height, volume are little, in light weight, environmental protection, has been widely applied in the middle of the current every field such as illumination, and the trend that replaces conventional light source is arranged greatly.
As lighting source, industry is more and more urgent to the demand of powerful light-emitting diode.Large-power light-emitting diodes is normally realized so that bigger light-emitting area to be provided by the size that adds big light-emitting diodes.This large-area light-emitting diode also can have problems when bigger light-emitting area is provided.For example, the increase of light-emitting diode area might not mean the increase of light-emitting area, because electric current can be selected the minimum path of impedance usually, causes light-emitting zone can concentrate on a place relatively and non-uniform light.In order to reduce current impedance, realize that electrode contacts with the good of p type semiconductor layer, can enlarge the contact area of P type electrode and p type semiconductor layer usually.Yet because P type electrode be thicker conducting metal, when its area is big more, the lighting area that blocks light-emitting diode is also just big more, thereby has reduced the light extraction efficiency of light-emitting diode.Therefore, how to provide a kind of light-emitting diode of high light-emitting efficiency to be still the problem that industry need solve.
Summary of the invention
In view of this, be necessary to provide a kind of light-emitting diode with high light-emitting efficiency.
A kind of light-emitting diode, comprise: a substrate, one resilient coating is positioned on the described substrate, one n type semiconductor layer is positioned on the resilient coating, and a luminescent layer is positioned on the n type semiconductor layer, and a p type semiconductor layer is positioned on the luminescent layer, one transparency conducting layer is positioned on the p type semiconductor layer, one P type electrode is positioned on the transparency conducting layer, and a N type electrode is positioned on the n type semiconductor layer, and described P type electrode comprises one the one a P type electrode and the 2nd a transparent P type electrode.
Compared with prior art, P type electrode in the light-emitting diode of the present invention is provided with the 2nd P type electrode, it can be light transmissive material, thereby reduced the area in the nontransparent zone of P type electrode, promptly reduced the shading area of P type electrode, the light that light-emitting diode is sent is gone out through this transparent electrode layer transmission, therefore improves the luminous efficiency of light-emitting diode greatly.
With reference to the accompanying drawings, the invention will be further described in conjunction with specific embodiments.
Description of drawings
Fig. 1 is the schematic top plan view of the light-emitting diode of one embodiment of the invention.
Fig. 2 is the schematic side view of the light-emitting diode among Fig. 1.
Fig. 3 is the schematic top plan view of the light-emitting diode of another embodiment of the present invention.
The main element symbol description
Light- emitting diode 10,30
Substrate 11
Resilient coating 12
N type semiconductor layer 13
Luminescent layer 14
P type semiconductor layer 15
Transparency conducting layer 16
N type electrode 23,33
P type electrode 25,35
The one P type electrode 251,351
The 2nd P type electrode 252,352
Embodiment
See also Fig. 1-2, light-emitting diode 10 in one embodiment of the invention comprises a substrate 11, be formed at the resilient coating 12 on the substrate 11, be formed at the n type semiconductor layer 13 on the resilient coating 12, be formed at the luminescent layer 14 on the n type semiconductor layer 13, be formed at the p type semiconductor layer 15 on the luminescent layer 14, be formed at the transparency conducting layer 16 on the p type semiconductor layer 15.This light-emitting diode 10 also comprises the P type electrode 25 that is formed on the transparency conducting layer 16 and is formed at N type electrode 23 on the n type semiconductor layer 13.Utilize P type electrode 25 and N type electrode 23 to be connected to external power source respectively, make light-emitting diode 10 forward conductions can make light-emitting diode 10 luminous.
Substrate 11 can use for example present known Sapphire Substrate, silicon carbide substrates or gallium nitride substrate etc.With with respect to the lower environment growth resilient coating 12 of follow-up normal of heap of stone brilliant temperature on substrate 11.N type semiconductor layer 13 can use doped N-type impurity in the nitride semiconductor crystal and form the atom of four families of for example mixing.Luminescent layer 14 can the Doped n-type or doping (dopant) of p type, can be doping of Doped n-type and p type simultaneously, also can undope fully.And, can be that the quantum well layer mixes and barrier layer undopes, the quantum well layer undopes and barrier layer mixes, quantum well layer and barrier layer all mixes or quantum well layer and barrier layer all undope.Moreover, can also carry out the doping (delta doping) of high concentration in the part zone of quantum well layer.P type semiconductor layer 15 can use doping p type impurity in the nitride semiconductor crystal and form the atom of two families of for example mixing.
Transparency conducting layer 16 can contain tin indium oxide (ITO), can increase the distribution area of electric current at p type semiconductor layer 15 thus, improves the light that luminescent layer 14 produces.
P type electrode 25 comprises that one the one P type electrode 251 and one the 2nd P type electrode, 252, the two P type electrodes 252 that are electrically connected with a P type electrode 251 are covered on the transparency conducting layer 16, and the distribution pattern of the 2nd P type electrode 252 is not limit.The 2nd P type electrode 252 in the present embodiment is a pectinate texture, and the area that covers on the transparency conducting layer 16 is less.Further, be arranged to the thickness of the 2nd P type electrode 252 littler than the thickness of transparency conducting layer 16.Preferable, the thickness of the 2nd P type electrode 252 is below 10nm.In other words, the thickness of the 2nd P type electrode 252 can be between 2-10nm.In the present embodiment, the 2nd P type electrode 252 contains nickel billon (Ni/Au), and this kind material not only can be made transparent nature, and conductivity is good.Replace traditional thick metal to make electrode with the 2nd P type electrode 252, not only can reduce to use the amount of thick metal,, more importantly be to reduce cost, the light of light-emitting diode 10 can see through the 2nd P type electrode 252, thereby improves the light extraction efficiency of light-emitting diode 10.The material of the 2nd P type electrode 252 is not limited to above-mentioned a kind of, can also use for example AZO, GZO, FTO, IZO, ZnO, one or more among the CdO.The one P type electrode 251 can comprise platinum alloy (Pt/Au), tungsten (W), chromium billon (Cr/Au) or palladium metal or metal alloy such as (Pd), and a described P type electrode 251 is a contact electrode.In addition, transparency conducting layer 16 and the 2nd P type electrode 252 resistance each other are low more is beneficial to that electric current is to flow well more.If aforementioned two layers of material resistance each other is too big, then electric current will select the less one deck of resistance to flow, and probably will lose the present invention's purpose.Moreover the 2nd P type electrode 252 can be positioned on the same horizontal plane with a P type electrode 251 and all directly contact with transparency conducting layer 16.Also a P type electrode 251 can be arranged on the 2nd P type electrode 252.Because the contact area of a P type electrode 251 and the 2nd P type electrode 252 is bigger, the resistance of formation is less, and electric current can flow more uniformly and distribute.N type electrode 23 can comprise titanium/aluminium/titanium/gold (Ti/Al/Ti/Au), chromium billon (Cr/Au) or plumbous billon (Pd/Au).
Fig. 3 is the schematic top plan view of the light-emitting diode 30 of another embodiment of the present invention.The structural similarity of the light-emitting diode 10 among the structure of this light-emitting diode 30 and the last embodiment, its P type electrode 35 is connected to external power source respectively with N type electrode 33, makes light-emitting diode 30 forward conductions can make light-emitting diode 30 luminous.P type electrode 35 comprises a P type electrode 351 and the 2nd P type electrode 352 that is electrically connected with a P type electrode 351 equally.The 2nd P type electrode 352 can be arranged on the same horizontal plane with a P type electrode 351 and all directly contact with transparency conducting layer (Fig. 3 is not shown).Preferable mode is arranged at a P type electrode 351 on the 2nd P type electrode 352.Because the contact area of a P type electrode 351 and the 2nd P type electrode 352 is bigger, the resistance of formation is less, and electric current can flow more uniformly and distribute.Difference is that the area of the 2nd P type electrode 352 is bigger, covers transparency conducting layer fully, and also promptly the area of the 2nd P type electrode 352 is identical with the area of transparency conducting layer.
Below, be that example describes manufacturing method for LED of the present invention with the structure of light-emitting diode 10.
At first, form an epitaxial structure.On the surface of substrate 11, utilize for example present known metal Metalorganic chemical vapor deposition method (MOCVD) or molecular beam epitaxy (MBE; Molecular BeamEpitaxy), make resilient coating 12, n type semiconductor layer 13, luminescent layer 14, p type semiconductor layer 15 according to this order of crystallization growth.
Because lattice structure and lattice constant are another important evidence of selecting brilliant substrate of heap of stone.If lattice constant difference is excessive between substrate and the epitaxial layer, often needs to form a resilient coating 12 earlier and just can obtain preferable crystalloid amount of heap of stone.Generally with respect to the lower environment growth resilient coating 12 of follow-up normal brilliant temperature of heap of stone on substrate 11.
13 of n type semiconductor layers can use silicon atom (Si), and the precursor of silicon can be silicomethane (SiH in the Metalorganic chemical vapor deposition board 4) or silicon ethane (Si 2H 6).The generation type of n type semiconductor layer 13 is mixed the gallium nitride layer (GaN) of silicon atom (Si) or aluminium gallium nitride alloy layer (AlGaN) gallium nitride layer or the aluminium gallium nitride alloy layer (AlGaN) to low concentration doping silicon atom (Si) by high concentration in regular turn.High concentration is mixed the gallium nitride layer (GaN) of silicon atom (Si) or the nurse contact difficult to understand (Ohmic Contact) that aluminium gallium nitride alloy layer (AlGaN) can provide N type semiconductor.
Luminescent layer 14 can be single heterojunction structure, double-heterostructure, single quantum well layer or multiple quantum trap layer structure.At present multiple quantum trap layer structure, just structures of multiple quantum trap layer/barrier layer of adopting more.The quantum well layer can use InGaN (InGaN), and barrier layer can use the ternary structural of aluminium gallium nitride alloy (AlGaN) etc.In addition, also can adopt quad arrangement, just use aluminum indium gallium nitride (Al xInyGa 1-x-yN) simultaneously as quantum well layer and barrier layer.The ratio of wherein adjusting aluminium and indium makes the energy rank of aluminum indium gallium nitride lattice can become the barrier layer on high energy rank and the quantum well layer on low energy rank respectively.Luminescent layer 14 can the Doped n-type or doping (dopant) of p type, can be doping of Doped n-type and p type simultaneously, also can undope fully.And, can be that the quantum well layer mixes and barrier layer undopes, the quantum well layer undopes and barrier layer mixes, quantum well layer and barrier layer all mixes or quantum well layer and barrier layer all undope.Moreover, can also carry out the doping (delta doping) of high concentration in the part zone of quantum well layer.
Magnesium-doped atom is to form p type semiconductor layer 15 on luminescent layer 14.And the precursor of magnesium can be CP in the Metalorganic chemical vapor deposition board 2Mg.The generation type of p type semiconductor layer 15 is mixed the gallium nitride layer (GaN) of magnesium atom (Mg) or gallium nitride layer or the aluminium gallium nitride alloy layer (AlGaN) that aluminium gallium nitride alloy layer (AlGaN) to high concentration is mixed magnesium atom (Mg) by low concentration in regular turn.High concentration is mixed the gallium nitride layer (GaN) of magnesium atom (Mg) or the nurse contact difficult to understand (Ohmic Contact) that the aluminium gallium nitride alloy layer can provide P type semiconductor.
Photoresist is coated comprehensively the surface of p type semiconductor layer 15 with centrifugal force to form the photoresistance film by photoresistance spin coating machine.With light lithography method (Photolithography) the photoresistance film patterning is formed shielding again, make and estimate that etching partly appears.Again with (the Inductivelycoupled plasma etcher of inductance type electric paste etching system; ICP) etch n type semiconductor layer 13, remove photoresistance again.
Then, on the surface of p type semiconductor layer 15, utilize method such as electron beam evaporation plating to form the transparency conducting layer 16 that contains tin indium oxide.
Afterwards, on the surface of transparency conducting layer 16, utilize method such as electron beam evaporation plating to form the 2nd P type electrode 252 that contains other material of mentioning in Ni/Au or the embodiment of the invention part with predetermined pattern.Also the 2nd P type electrode 252 can be covered on the transparency conducting layer 16 fully.
On the 2nd P type electrode 252, form a P type electrode 251 with the sputter or the mode of evaporation at last and on n type semiconductor layer 13, form N type electrode 23.It should be noted that a P type electrode 251 is metal, so the area of its formation can not be too big, otherwise can have influence on the light emission rate of light-emitting diode.
In addition, a P type electrode 251 can be positioned on the same horizontal plane with the 2nd P type electrode 252 and all directly contact with transparency conducting layer 16.

Claims (10)

1. light-emitting diode comprises:
One substrate;
One resilient coating is positioned on the described substrate;
One n type semiconductor layer is positioned on the resilient coating;
One luminescent layer is positioned on the n type semiconductor layer;
One p type semiconductor layer is positioned on the luminescent layer;
One transparency conducting layer is positioned on the p type semiconductor layer;
One P type electrode is positioned on the transparency conducting layer; And
One N type electrode is positioned on the n type semiconductor layer, it is characterized in that: described P type electrode comprises one the one a P type electrode and the 2nd a transparent P type electrode.
2. light-emitting diode as claimed in claim 1 is characterized in that: described transparency conducting layer contains tin indium oxide.
3. light-emitting diode as claimed in claim 1 is characterized in that: a described P type electrode is platinum alloy (Pt/Au), tungsten (W), chromium billon (Cr/Au) or palladium (Pd).
4. light-emitting diode as claimed in claim 1 is characterized in that: described N type electrode is titanium/aluminium/titanium/gold (Ti/Al/Ti/Au), chromium billon (Cr/Au) or plumbous billon (Pd/Au).
5. light-emitting diode as claimed in claim 1 is characterized in that: described the 2nd P type electrode comprises Ni/Au, AZO, GZO, FTO, IZO, ZnO, at least a among the CdO.
6. light-emitting diode as claimed in claim 1 is characterized in that: the thickness of described the 2nd P type electrode is less than the thickness of transparency conducting layer.
7. light-emitting diode as claimed in claim 6 is characterized in that: the thickness of described the 2nd P type electrode is between 2-10nm.
8. as any described light-emitting diode in the claim 1-7 item, it is characterized in that: described the 2nd P type electrode covers on the transparency conducting layer with figure.
9. as any described light-emitting diode in the claim 1-7 item, it is characterized in that: a described P type electrode is positioned at described the 2nd P type electrode top, is directly contacted with this transparency conducting layer by the 2nd P type electrode.
10. as any described light-emitting diode in the claim 1-7 item, it is characterized in that: a described P type electrode is positioned on the same horizontal plane with described the 2nd P type electrode and all directly contacts with transparency conducting layer.
CN2010101760865A 2010-05-18 2010-05-18 Light emitting diode Pending CN102255025A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112274A (en) * 2019-05-22 2019-08-09 厦门乾照光电股份有限公司 Thin-film LED and production method

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CN1661818A (en) * 2004-02-27 2005-08-31 广镓光电股份有限公司 Structure of LED
CN1681137A (en) * 2004-04-07 2005-10-12 夏普株式会社 Light emitting nitride semiconductor device and method of fabricating the same
CN1747188A (en) * 2004-09-06 2006-03-15 璨圆光电股份有限公司 Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer
CN1805162A (en) * 2004-04-16 2006-07-19 华上光电股份有限公司 Gallium nitride-based light emitting diode
CN101075652A (en) * 2006-09-05 2007-11-21 武汉迪源光电科技有限公司 Production of coarsening electrode for high-brightness packed LED chip and vertical LED chip
US20090267048A1 (en) * 2005-06-09 2009-10-29 Rohm Co., Ltd. Semiconductor light emitting element

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1353466A (en) * 2000-11-10 2002-06-12 晶元光电股份有限公司 LED with reverse tunnel layer
CN1661820A (en) * 2004-02-26 2005-08-31 元砷光电科技股份有限公司 Light emitting diode
CN1661818A (en) * 2004-02-27 2005-08-31 广镓光电股份有限公司 Structure of LED
CN1681137A (en) * 2004-04-07 2005-10-12 夏普株式会社 Light emitting nitride semiconductor device and method of fabricating the same
CN1805162A (en) * 2004-04-16 2006-07-19 华上光电股份有限公司 Gallium nitride-based light emitting diode
CN1747188A (en) * 2004-09-06 2006-03-15 璨圆光电股份有限公司 Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer
US20090267048A1 (en) * 2005-06-09 2009-10-29 Rohm Co., Ltd. Semiconductor light emitting element
CN101075652A (en) * 2006-09-05 2007-11-21 武汉迪源光电科技有限公司 Production of coarsening electrode for high-brightness packed LED chip and vertical LED chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112274A (en) * 2019-05-22 2019-08-09 厦门乾照光电股份有限公司 Thin-film LED and production method

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Application publication date: 20111123