KR20120064494A - Light emitting diode - Google Patents

Abstract

PURPOSE: A light emitting device is provided to increase light efficiency by reducing a region of an active layer exposed to the outside by partially etching only a part connecting a secondary finger electrode. CONSTITUTION: A first electrode(160) includes a first electrode pad(162) and a first finger electrode part. The first electrode pad is arranged on one side on a second semiconductor layer. The first finger electrode part is extended in the other side direction while being connected to the first electrode pad. An insulating layer is formed between the second semiconductor layer and the first electrode. A second electrode(170) is arranged in the other side of the second semiconductor layer.

Description

Light emitting diodes

The embodiment relates to a light emitting device, and more particularly, to a light emitting device capable of protecting the light emitting device from electrostatic discharge (ESD) and improving light extraction efficiency.

Fluorescent lamps are increasingly being replaced by other light sources because they are against the trend of the future lighting market aiming to be environmentally friendly due to frequent replacement and the use of fluorescent materials.

The most popular light source is LED (Light Emitting Diode), which has the advantages of fast processing speed and low power consumption of semiconductor, and it is considered as next generation light source because it is environmentally friendly and has high energy saving effect. Therefore, the use of LED to replace the existing fluorescent lamp is actively in progress.

Currently, semiconductor light emitting devices such as LEDs are applied to various devices including televisions, monitors, notebooks, mobile phones, and other display devices, and in particular, are widely used as backlight units in place of existing CCFLs.

Research is underway to improve the light extraction efficiency of light emitting devices, and light emitting devices are vulnerable to ESD.

According to the embodiment, the light emitting device according to the embodiment does not etch all the regions where the electrodes are to be positioned, and only partially etches the portions to which the auxiliary finger electrodes are connected, thereby reducing the area of the active layer exposed to the outside, thereby reducing current leakage. Provided is a light emitting device in which light extraction efficiency and light efficiency are increased.

The embodiment provides a light emitting device in which a finger electrode portion is formed symmetrically at a central portion of the light emitting device so that a current spreading effect is improved.

The light emitting device according to the embodiment includes a substrate, a light emitting structure disposed on the substrate, the light emitting structure comprising an active layer between the first semiconductor layer, the second semiconductor layer and the first semiconductor layer and the second semiconductor layer, the second A first electrode including a first electrode pad disposed on one side of the semiconductor layer and a first finger electrode part connected to the first electrode pad and extending in the other direction, and formed between the second semiconductor layer and the first electrode An insulating layer and a second electrode disposed on the other side of the second semiconductor layer, and the first electrode further includes at least one auxiliary finger electrode connected to the first finger electrode part and connected to the first semiconductor layer. The light emitting structure may include a groove extending from the first finger electrode part to the first semiconductor layer and having a width greater than that of the auxiliary finger electrode.

Here, the first finger electrode unit may include a first finger electrode and a second finger electrode symmetrical with the first finger electrode.

In addition, a plurality of auxiliary finger electrodes may be formed, and the plurality of auxiliary finger electrodes may have the same spacing between two adjacent auxiliary finger electrodes.

The embodiment does not etch all the regions where the electrodes of the light emitting device are to be etched, and only partially etches the portions to which the auxiliary finger electrodes are connected, thereby reducing the area of the active layer exposed to the outside, thereby reducing current leakage. This has the advantage of being increased.

In addition, in the embodiment, a groove in which the auxiliary finger electrode is connected to the first semiconductor layer may be spaced apart from the electrode pad to protect the light emitting device from an electrostatic discharge (ESD).

1 is a layout view illustrating an electrode of a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view taken along the line AA of FIG. 1.
3 is a cross-sectional view taken along line BB of FIG. 1.
4 is a diagram illustrating ESD destruction test data of a light emitting device.
5 is a diagram illustrating light emission experiment data of a light emitting device.
6 is a layout view illustrating an electrode of a light emitting device according to another exemplary embodiment.
7 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Thus, in some embodiments, well known process steps, well known device structures, and well-known techniques are not specifically described to avoid an undesirable interpretation of the present invention. Like reference numerals refer to like elements throughout.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can include both downward and upward directions. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Prior to the description of the embodiments, each layer (film), region, pattern, or structure referred to in the embodiment, each layer (film) region, electrode pad, or "on", "bottom" of the patterns "on" and "under" are all direct, or "indirectly" all other In addition, the reference | standard about the above or below of each layer is demonstrated based on drawing.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size and area of each component do not entirely reflect actual size or area.

In addition, the angle and direction mentioned in the process of describing the structure of the light emitting device in the embodiment are based on those described in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

1 is a layout view illustrating an electrode of a light emitting device according to an embodiment, FIG. 2 is a cross-sectional view taken along line AA of FIG. 1, FIG. 3 is a cross-sectional view taken along line BB of FIG. 1, and FIG. 4. FIG. 5 is a view showing ESD destruction test data of a light emitting device, and FIG. 5 is a view showing light emission test data of a light emitting device.

1 to 3, the light emitting device 100 includes a substrate 110, a buffer layer 112, a first semiconductor layer 120, a second semiconductor layer 140, and first and second semiconductor layers 120, The active layer 130 may be included between the 140.

The substrate 110 is a substrate suitable for growing a semiconductor single crystal, and is preferably formed using a transparent material including sapphire. In addition to sapphire, the substrate 110 may be formed of zinc oxide (ZnO), gallium nitride (gallium nitride). gallium nitride (GaN), silicon carbide (SiC) and aluminum nitride (AlN).

A buffer layer 112 may be disposed on the substrate 110 to mitigate lattice mismatch between the substrate 110 and the first semiconductor layer 120. The buffer layer 112 may be formed in a low temperature atmosphere, and may be selected from materials such as GaN, InN, AlN, AlInN, InGaN, AlGaN, and InAlGaN.

The first semiconductor layer 120 may be formed on the buffer layer 112. The first semiconductor layer 120 may include an n-type semiconductor layer to provide electrons to the active layer 130, and the first semiconductor layer 120 may be formed of only the first conductive semiconductor layer or may be formed of a first conductive layer. An undoped semiconductor layer (not shown) may be further included below the conductive semiconductor layer, but the embodiment is not limited thereto.

The n-type semiconductor layer is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), for example, GaN, AlN , AlGaN, InGaN, InN, InAlGaN, AlInN, and the like, and n-type dopants such as Si, Ge, Sn, and the like may be doped.

The undoped semiconductor layer is a layer formed to improve the crystallinity of the first conductivity type semiconductor layer, except that the n-type dopant is not doped so that the first conductivity is lower than that of the first conductivity type semiconductor layer. It will be the same as the type semiconductor layer.

Therefore, the active layer 130 and the second semiconductor layer 140 may be sequentially stacked on the first semiconductor layer 120.

First, the active layer 130 is an area where electrons and holes are recombined. The active layer 130 may transition to a low energy level as the electrons and holes recombine, and may generate light having a corresponding wavelength.

The active layer 130 is, for example, including a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may be formed, and may be formed of a single quantum well structure or a multi quantum well structure (MQW). Therefore, more electrons are collected at the lower energy level of the quantum well layer, and as a result, the probability of recombination of electrons and holes can be increased, thereby improving the light emitting effect. In addition, a quantum wire structure or a quantum dot structure may be included.

The second semiconductor layer 140 injects holes into the active layer 130 described above, and the second semiconductor layer 140 may be implemented as, for example, a p-type semiconductor layer, wherein the p-type semiconductor layer is In _x Al. _y Ga _1-xy N A semiconductor material having a composition formula of (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, or the like; P-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped.

The first semiconductor layer 120, the active layer 130, and the second semiconductor layer 140 may be, for example, metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). It may be formed using a plasma chemical vapor deposition (PECVD; Plasma-Enhanced Chemical Vapor Deposition), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. It does not limit to this.

In addition, the doping concentrations of the conductive dopants in the first semiconductor layer 120 and the second semiconductor layer 140 may be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be variously formed, but is not limited thereto.

In addition, unlike the above, the first semiconductor layer 120 may include a p-type semiconductor layer, and the second semiconductor layer 140 may include an n-type semiconductor layer. That is, although the positions in which the first semiconductor layer 120 and the second semiconductor layer 140 are formed with respect to the active layer 130 may be changed, the first semiconductor layer 120 includes the n-type semiconductor layer below. And formed on the substrate 110.

Referring to FIG. 2 again, the transparent electrode layer 150 may be formed on the second semiconductor layer 140.

The transparent electrode layer 150 is formed of ITO, IZO (In-ZnO), GZO (Ga-ZnO), AZO (Al-ZnO), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), IrO _x , RuO _x , RuO _x / ITO, Ni / IrO _x / Au, and Ni / IrO _x / Au / ITO. Accordingly, light generated in the active layer 130 may be emitted to the outside, and the current group may be prevented by being formed on the whole or part of the outer surface of the second semiconductor layer 140.

The first electrode 160 may be disposed on the second semiconductor layer 1400.

The first electrode 160 is connected to the first electrode pad 162 and the first electrode pad 162 disposed on one side of the second semiconductor layer 140, and extends to the other side of the first finger electrode 164. 166).

The first electrode 160 may include a conductive material. For example, nickel (Ni), platinum (Pt), ruthenium (Ru), iridium (Ir), rhodium (Rh), tantalum (Ta), and molybdenum (Mo), titanium (Ti), silver (Ag), tungsten (W), copper (Cu), chromium (Cr), palladium (Pd), vanadium (V), cobalt (Co), niobium (Nb), zirconium It may be formed of at least one of (Zr), indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO), but is not limited thereto.

An insulating layer 190 may be formed between the second semiconductor layer 140 and the first electrode 160 to prevent an electrical short.

An arrangement shape of the insulating layer 190 may be formed to correspond to the first electrode 160, and preferably, may be formed to have a width larger than the width of the first electrode 160, but is not limited thereto.

The insulating layer 190 includes a non-conductive organic material or an inorganic material. Preferably, the insulating layer 190 may be formed of, for example, urethane, polyester, or acrylic, and may be formed of a single layer or a multilayer structure. have. However, it is not limited thereto.

In addition, the first electrode 160 may further include at least one auxiliary finger electrode 168 connected to the first finger electrode parts 164 and 166 and connected to the first semiconductor layer 120. In other words, the auxiliary finger electrode 168 connected to the first finger electrode parts 164 and 166 penetrates the insulating layer 190, the second semiconductor layer 140, and the active layer 130 to form the first semiconductor layer 120. ).

In this case, the light emitting structure corresponds to the auxiliary finger electrode 168 and extends from the first finger electrode parts 164 and 166 to the first semiconductor layer 120 so that the first semiconductor layer 120 is exposed. 180 may be formed. That is, the groove 180 may be formed in a portion of the second semiconductor layer 140, the active layer 130, and the first semiconductor layer 120 formed therebetween so that the auxiliary finger electrode 168 is connected to the first semiconductor layer 120. ) Is formed.

The groove 180 may be formed by a wet etching, dry etching, or laser lift off method, but is not limited thereto.

The size or shape of the groove 180 is not limited, but may preferably have a width larger than that of the auxiliary finger electrode 168 to prevent electrical short.

If the first semiconductor layer 120 is an n-type semiconductor, the first electrode 160 operates as an n-type electrode.

The number of auxiliary finger electrodes 168 is not limited, and may be formed in an appropriate number according to the size, area, and light emitting capacity of the light emitting device 100.

A plurality of auxiliary finger electrodes 168 may be formed, and the plurality of auxiliary finger electrodes 168 may have the same distance d1 between two adjacent auxiliary finger electrodes 168. Since the interval between the auxiliary finger electrodes 168 is the same, current spreading may be uniformly performed throughout the light emitting device 100.

In addition, a plurality of auxiliary finger electrodes 168 may be formed, and the distance between two auxiliary finger electrodes 168 adjacent to each other may be closer to each other from the first electrode pad 162. Therefore, even if the auxiliary finger electrode 168 is formed far from the first electrode pad 162, it is possible to smoothly supply current.

In addition, the thickness of the auxiliary finger electrode 168 may increase as the distance from the first electrode pad 162 increases. Therefore, even if the auxiliary finger electrode 168 is formed far from the first electrode pad 162, it is possible to smoothly supply current.

According to the exemplary embodiment, the light emitting device may be protected from electrostatic discharge (ESD) by supplying a mesa-etched portion and a passage current through the auxiliary finger electrode instead of supplying a current to the semiconductor layer directly from the electrode pad. Referring to FIG. 4, the ESD breakdown test of the related art shows a yield of 52%, while the embodiment shows a yield of 84%, thereby further improving ESD resistance.

In an exemplary embodiment, the insulating layer 190 is formed between the first electrode 160 and the second semiconductor layer 140, instead of mesa etching all regions in which the first electrode 160 is to be located. Since only a portion of the light emitting device 100 is etched so that the auxiliary finger electrode 168 connected to the portions 164 and 166 may be connected to the first semiconductor layer 120, the area of the active layer 130 exposed to the outside is reduced. This prevents current leakage and increases light extraction efficiency and light efficiency. Referring to FIG. 5, in the light emission experiment data shown in FIG. 5, the conventional invention has an emission area ratio of 76%, while the embodiment has an effect of improving 3% to 79%.

1 and 3, the inner surfaces of the auxiliary finger electrode 168 and the groove 180 may be electrically shorted. For example, the inner side surfaces of the auxiliary finger electrode 168 and the groove 180 may be spaced apart from each other.

Accordingly, electrical short between the auxiliary finger electrode 168, the second semiconductor layer 140, and the active layer 130 may be prevented.

In addition, the insulating layer 190 may be formed to extend to surround the outer circumferential surface of the auxiliary finger electrode 168. That is, the insulating layer 190 may be formed in the space between the inner surface of the groove 180 and the auxiliary finger electrode 168. Therefore, electrical short can be prevented.

The number of first finger electrodes 164 and 166 is not limited, but may preferably include a first finger electrode 164 and a second finger electrode 166. That is, the light emitting device 100 may be arranged in various ways.

The first finger electrode 164 and the second finger electrode 166 may be symmetrically disposed with each other. Since the first finger electrode 164 and the second finger electrode 166 are disposed symmetrically with each other, efficient current spreading can be expected.

In addition, any one or more of the first finger electrode 164 and the second finger electrode 166 may include bending. The bending may be arranged in various forms in consideration of the shape and current spreading of the light emitting device 100. The bending may have a curvature, but is not limited thereto.

The second semiconductor layer 140 may include a second electrode 170.

The second electrode 170 is connected to the second electrode pad 172 and the second electrode pad 172 disposed on one side of the second semiconductor layer and at least one second extending in the first electrode pad direction 162. Finger electrode portions 174, 176, and 178 may be included.

At least one second finger electrode unit 174, 176, and 178 may be disposed, and the number of second finger electrodes 174, 176, and 178 is not limited. Preferably, as illustrated in FIG. 1, the third finger electrode 174 and the fourth finger electrode ( 176 and a fifth finger electrode 178. That is, according to the size of the light emitting device 100 may be disposed in various ways in consideration of current diffusion.

The third finger electrode 174 is disposed between the first finger electrode 164 and the second finger electrode 166 and is spaced apart from the first finger electrode 164 and the second finger electrode 166 by a predetermined distance. Is placed. The separation distance d2 of the first finger electrode 164 and the third finger electrode 174 may be the same as the separation distance d3 of the second finger electrode 166 and the third finger electrode 174. This is because other fingers are arranged symmetrically with respect to the third finger electrode 174 to improve the current spreading effect. However, the separation distance d2 of the first finger electrode 164 and the third finger electrode 174 may be different from the separation distance d3 of the second finger electrode 166 and the third finger electrode 174. . Of course, it is not limited to this.

The fourth finger electrode 176 and the fifth finger electrode 178 may be symmetrically disposed with respect to the third finger electrode 174. In addition, the fourth finger electrode 176 and the fifth finger electrode 178 may be spaced apart from the first finger electrode 164 and the second finger electrode 166 by a predetermined distance.

The separation distance between the third finger electrode 174 and the fourth finger electrode 176 may be equal to the separation distance between the third finger electrode 174 and the fifth finger electrode 178, but is not limited thereto.

The separation distance d4 of the first finger electrode 164 and the fourth finger electrode 176 may be different from the separation distance d5 of the first finger electrode 164 and the fifth finger electrode 178. The same may be arranged.

That is, the distance between each finger is constant and symmetrically arranged so that the current diffusion effect can be improved.

At least one of the third and fifth finger electrodes 174 to 178 may include bending, and the bending may be formed to have a curvature.

6 is a layout view illustrating an electrode of a light emitting device according to another exemplary embodiment. Referring to FIG. 6, the light emitting device 200 of the embodiment differs from the light emitting device 100 of another embodiment only in the arrangement of the fingers, and the other configurations are the same.

In the light emitting device 200, a first finger electrode part 264 is disposed on a center surface of the light emitting device 200, and two second finger electrode parts 274 are symmetrical with respect to the first finger electrode part 264. , 276 is disposed. The embodiment shows only one example in which the arrangement of the fingers may vary according to the size of the light emitting device 200, and the present invention is not limited thereto.

Although the embodiment has been described with reference to a horizontal light emitting device, the present invention is not limited thereto, and may be applied to a vertical light emitting device, a flip light emitting device, or a light emitting device having a via hole structure.

7 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 7, the light emitting device package 300 includes a body 320, a first electrode layer 331 and a second electrode layer 332 provided on the body 320, and a first electrode layer installed on the body 320. 331 and a light emitting device 350 according to an embodiment electrically connected to the second electrode layer 332, and a molding member 340 sealing the light emitting device 350.

The body 320 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 350.

The first electrode layer 331 and the second electrode layer 332 are electrically separated from each other, and provide power to the light emitting device 350. In addition, the first electrode layer 331 and the second electrode layer 332 can increase the light efficiency by reflecting the light generated from the light emitting device 350, and discharges heat generated from the light emitting device 350 to the outside It can also play a role.

The light emitting device 350 may be installed on the body 320 or on the first electrode layer 331 or the second electrode layer 332.

The light emitting device 350 may be electrically connected to the first electrode layer 331 and the second electrode layer 332 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 340 may seal and protect the light emitting device 350. In addition, the molding member 340 may include a phosphor to change the wavelength of light emitted from the light emitting device 350.

The light emitting device package may mount at least one of the light emitting devices of the above-described embodiments as one or more, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting system may include a lamp or a street lamp.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100: light emitting element 110: substrate
112: buffer layer 120: first semiconductor layer
130: active layer 140: second semiconductor layer
150: transparent electrode layer 160: first electrode
162: first electrode pad 164: first finger electrode
166: second finger electrode 168: auxiliary finger electrode
170: second electrode 172: second electrode pad
174: third finger electrode 176: fourth finger electrode
178: fifth finger electrode 180: groove
190: insulation layer

Claims (15)

Board;
A light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer;
A first electrode including a first electrode pad disposed on one side of the second semiconductor layer and a first finger electrode part connected to the first electrode pad and extending in the other direction;
An insulating layer formed between the second semiconductor layer and the first electrode; And
And a second electrode disposed on the other side of the second semiconductor layer.
The first electrode further includes at least one auxiliary finger electrode connected to the first finger electrode part and connected to the first semiconductor layer.
The light emitting device includes a groove extending from the first finger electrode part to the first semiconductor layer and having a groove having a width greater than that of the auxiliary finger electrode. The method of claim 1,
The first finger electrode unit,
A first finger electrode; And
And a second finger electrode symmetrical with the first finger electrode. The method of claim 1,
The auxiliary finger electrode,
Multiple dogs are formed,
The plurality of auxiliary finger electrodes of the light emitting device having the same spacing between two adjacent adjacent finger electrodes. The method of claim 1,
The auxiliary finger electrode,
Multiple dogs are formed,
The light emitting device of claim 2, wherein the distance between two adjacent auxiliary finger electrodes is closer to each other from the first electrode pad. The method of claim 1,
The auxiliary finger electrode,
A light emitting device electrically shorted to an inner side surface of the groove except for the first semiconductor layer. The method of claim 1,
The insulating layer,
The light emitting device is formed in the space between the auxiliary finger electrode and the inner surface of the groove. The method of claim 1,
The second electrode,
And a second finger electrode part connected to a second electrode pad and the second electrode pad and extending in the direction of the first electrode pad. The method of claim 7, wherein
The second finger electrode unit,
A third finger electrode disposed between the first and second finger electrodes; And
A light emitting device comprising a fourth finger electrode and a fifth finger electrode spaced apart from each other by a predetermined distance on the outside of the first and second finger electrodes. The method of claim 2 or 8,
At least one of the first to fifth finger electrodes has a curvature. The method of claim 8,
The groove is a light emitting device arranged symmetrically with respect to the third finger electrode. The method of claim 8,
And a separation distance between the first finger electrode and the third finger electrode is equal to a separation distance between the second finger electrode and the third finger electrode. The method of claim 8,
And a separation distance between the first finger electrode and the fourth finger electrode is the same as the separation distance between the second finger electrode and the fifth finger electrode. The method of claim 8,
The distance between the third finger electrode and the fourth finger electrode is disposed equal to the distance between the third finger electrode and the fifth finger electrode. 10. The method of claim 9,
The fourth finger electrode and the fifth finger electrode are arranged symmetrically with respect to the third finger electrode. A light emitting device package comprising the light emitting device according to any one of claims 1 to 14.

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