CN1353466A - LED with reverse tunnel layer - Google Patents
LED with reverse tunnel layer Download PDFInfo
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- CN1353466A CN1353466A CN00132397A CN00132397A CN1353466A CN 1353466 A CN1353466 A CN 1353466A CN 00132397 A CN00132397 A CN 00132397A CN 00132397 A CN00132397 A CN 00132397A CN 1353466 A CN1353466 A CN 1353466A
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Abstract
A LED with reverse tunnel layer is composed of laminated semiconductor layer, luminous layer, first semiconductor layer, second semiconductor layer, n-type reverse tunnel layer and transparent conducting layer. The luminous layer, the first and the second semiconductor layers constitute the first-direction polarity. The reverse tunnel layer is formed on the said laminated semiconductor layer to form a p-n junction with the second-direction polarity.
Description
The present invention relates to a kind of light-emitting diode, particularly a kind of light-emitting diode with reverse tunnel contact layer.
The application of light-emitting diode is rather extensive, for example, can be applicable to optical display, traffic sign, data storage device, communication device, lighting device and medical treatment device.In this technology, the brightness of one of technical staff's important topic for how improving light-emitting diode at present.
The light-emitting diode of prior art as shown in Figure 1, comprise an insulated substrate 10 that forms by sapphire, be formed on the gallium nitride resilient coating 11 on the insulated substrate 10, be formed on the n type gallium nitride contact layer 12 on the resilient coating 11, be formed on the n type aluminium gallium nitride alloy bond course 13 on the n type gallium nitride contact layer 12, be formed on the InGaN multiple quantum well light emitting layer 14 on the n type aluminium gallium nitride alloy bond course 13, be formed on the p type aluminium gallium nitride alloy bond course 15 on the luminescent layer 14, be formed on the p type gallium nitride contact layer 16 on the p type aluminium gallium nitride alloy bond course 15, be formed on the Ni/Au transparency conducting layer 17 on the p type gallium nitride contact layer 16, its middle body is removed with etching mode, make exposed portions serve p type gallium nitride contact layer 16, and be formed on electrode 18 before the p type on this exposed portions serve of p type gallium nitride contact layer 16, and electrode 18 contacts with transparency conducting layer 17 before making, again because sapphire is non-conductive, so light-emitting diode suitably must be etched to n type gallium nitride contact layer 12, on n type gallium nitride contact layer 12, form a n type rear electrode 19 then.
United States Patent (USP) the 6th, 078, No. 064 (itself and this case have common assignee) discloses another kind of led configurations, wherein is formed on the p type contact layer with the ITO transparency conducting layer.But the major defect of p type contact layer is its surface and forms many defectives, thereby the contact resistance of increase and ITO electrically conducting transparent interlayer, and the carrier concentration that is wherein mixed is difficult for reaching 5e18/cm
3More than, thereby resistance coefficient be difficult for to reduce, these shortcomings all cause the increase of light-emitting diode forward voltage, and to the electrical generation harmful effect of light-emitting diode.
The artificial brightness that improves the prior art light-emitting diode of this case invention, think that semiconductor laminated at transparency conducting layer and light-emitting diode provides a n+ type reverse tunnel layer, by contact action and the electric current peptizaiton that this reverse tunnel layer produced, promptly may improve the brightness of light-emitting diode.Herein " oppositely " mean this n+ reverse tunnel layer and be adjacent the polar orientation that p-n that semiconductor layer forms connects face, luminescent layer is adjacent the polar orientation that p type bond course and n type p-n that bond course forms connect face in the light-emitting diode, in other words, this n+ reverse tunnel layer and one adjacent semiconductor p-n that layer forms connect the opposite polarity directions of face in the p of semiconductor device type electrode and the formed polar orientation of n type electrode." tunnelling " means this n+ reverse tunnel layer can allow electric current pass wherein by tunneling effect (tunneling effect).This case inventor is through this kind of experiment confirm n+ reverse tunnel layer, in the quite little situation of its thickness, unexpected outside, do not increase positive voltage of light emitting diode unexpectedly in fact, and can reach the Expected Results of above-mentioned raising light-emitting diode luminance really.
Thereby main purpose of the present invention is to provide a kind of light-emitting diode of the n+ of having reverse tunnel layer, and it can reach the progressive effect that improves brightness.
For achieving the above object, the invention provides a kind of light-emitting diode with reverse tunnel layer, comprise an insulated substrate that forms by sapphire, be formed on this insulated substrate and comprise a resilient coating of gallium nitride, be formed on this resilient coating and comprise a n type contact layer of gallium nitride, be formed on this n type contact layer and comprise a n type bond course of aluminium gallium nitride alloy, be formed on this n type bond course and comprise a multiple quantum well light emitting layer of InGaN, be formed on this luminescent layer and comprise a p type bond course of aluminium gallium nitride alloy, be formed on this p type bond course and comprise a p type contact layer of gallium nitride, be formed on this p type contact layer, comprise InGaN, and a n+ type reverse tunnel layer with high carrier concentration, be formed on this n+ type reverse tunnel layer and comprise the transparency conducting layer of ITO, wherein a part is removed with etching mode, make this n+ type reverse tunnel layer of exposed portions serve, and be formed on electrode before the p type on this exposed portions serve of this n+ type reverse tunnel layer, and this preceding electrode is contacted with this n+ type reverse tunnel layer, again because sapphire is non-conductive, so light-emitting diode suitably must be etched to this n type contact layer, on this n type contact layer, form a n type rear electrode then.
Description describes each preferred embodiment of the present invention in detail.
Fig. 1 is a schematic diagram, shows the structure of a prior art light-emitting diode;
Fig. 2 is a schematic diagram, shows the structure according to the present invention's first preferred embodiment light-emitting diode;
Fig. 3 is a schematic diagram, shows the structure according to the present invention's second preferred embodiment light-emitting diode; And
Fig. 4 is a schematic diagram, shows the structure according to the present invention's the 3rd preferred embodiment light-emitting diode.
Referring now to each accompanying drawing, describe the present invention in detail.
With reference to Fig. 2, the light-emitting diode that has reverse tunnel layer according to the present invention's first preferred embodiment, comprise an insulated substrate 10 that forms by sapphire, be formed on the insulated substrate 10 and comprise a resilient coating 11 of gallium nitride, be formed on the resilient coating 11 and comprise a n type contact layer 12 of gallium nitride, be formed on the n type contact layer 12 and comprise a n type bond course 13 of aluminium gallium nitride alloy, be formed on the n type bond course 13 and comprise a multiple quantum well light emitting layer 14 of InGaN, be formed on the luminescent layer 14 and comprise a p type bond course 15 of aluminium gallium nitride alloy, be formed on the p type bond course 15 and comprise a p type contact layer 16 of gallium nitride, be formed on the p type contact layer 16, comprise InGaN, and a n+ type reverse tunnel layer 20 with high carrier concentration, be formed on the n+ type reverse tunnel layer 20 and comprise the transparency conducting layer 17 of Ni/Au, wherein a part is removed with etching mode, make exposed portions serve n+ type reverse tunnel layer 20, and be formed on electrode 18 before the p type on this exposed portions serve of n+ type reverse tunnel layer 20, and electrode 18 contacts with n+ type reverse tunnel layer 20 before making, again because sapphire is non-conductive, so light-emitting diode suitably must be etched to n type contact layer 12, on n type contact layer 12, form a n type rear electrode 19 then.In this embodiment, the carrier concentration of n+ type reverse tunnel layer 20 is 1.5e20/cm
3Thickness is about 20 dusts, its light transmittance is splendid, 16 p-n that form of this reverse tunnel layer 20 and contact layer connect the polar orientation of face, be adjacent the polar orientation that p type bond course 15 and n type bond course 13 p-n that form connect face in contrast to luminescent layer 14, the high carrier concentration of this reverse tunnel layer 20 makes electronics be passed wherein by tunneling effect.20mA decide test under the electric current, the result shows that the brightness according to this embodiment light-emitting diode of the present invention is about 119% of aforementioned prior art light-emitting diode luminance, and its forward voltage does not increase in fact.The raising of this brightness obviously belongs to valuable enhancement effect.
Fig. 3 shows second preferred embodiment of the present invention, and itself and the above-mentioned first preferred embodiment difference are replacing the transparency conducting layer 17 that comprises Ni/Au described in the leading portion with the formed transparency conducting layer 17a of tin indium oxide (ITO).The light transmittance of Ni/Au transparency conducting layer 17 only about 50%, and the light transmittance of ITO transparency conducting layer 17a is higher than 95%, in this embodiment, the thickness of ITO transparency conducting layer 17a is about 2800 dusts, 20mA decide test under the electric current, the result shows, than the first preferred embodiment light-emitting diode, the brightness of this second preferred embodiment light-emitting diode increases by 48% approximately, and this second preferred embodiment positive voltage of light emitting diode does not increase in fact.That is than aforementioned prior art light-emitting diode, the brightness of this second preferred embodiment light-emitting diode increases by 76% approximately, the significantly raising of this brightness, extremely valuable really enhancement effect.Another advantage of this second preferred embodiment is need not that ITO transparency conducting layer 17a is carried out sheath and handles, thereby can economize except that in the prior art, for avoiding burning, and need carry out the handling procedure of sheath, so can reach the effect of simplification fabrication schedule to Ni/Au transparency conducting layer 17.This case inventor also experimentizes for the n+ type InGaN reverse tunnel layer of different-thickness in addition, found that the forward voltage of light-emitting diode increased thereupon, so its thickness should not be too big when thickness increased.In fact suitable thickness can be via the experiment decision.
Those skilled in the art can understand easily, and with regard to aforementioned two preferred embodiments, insulated substrate 10 can comprise and is selected from sapphire, LiGaO
3, and LiAlO
3A kind of material in the constituent material group of institute; Resilient coating 11 can be made by the GaN material; N type contact layer 12 can comprise a kind of material that is selected from GaN and the constituent material group of AlGaN institute; N type bond course 13 comprises Al
xGa
1-xN, wherein, 0≤x≤1; InGaN multiple quantum well light emitting layer 14 comprises r indium gallium nitride quantum well and r+1 InGaN barrier layer, make each indium gallium nitride quantum well up and down two sides one InGaN barrier layer is all arranged, wherein, r 〉=1, each indium gallium nitride quantum well is by In
eGa
1-eN constitutes, and each InGaN barrier layer is by In
fGa
1-fN constitutes, and 0≤f≤e≤1; P type bond course 15 can comprise Al
zGa
1-zN, wherein, 0≤z≤1; P type contact layer 16 can comprise a kind of material that is selected from GaN and the constituent material group of AlGaN institute; ITO transparency conducting layer 17a can also CTO or the TiWN transparency conducting layer replace; N+ type reverse tunnel layer 20 can comprise a kind of material that is selected from the constituent material group of the gallium nitride based material of InGaN, GaN and other institute.
Fig. 4 shows the 3rd preferred embodiment of the present invention, wherein a n type electrode 40 be formed at a n type GaAs substrate 41 lower surface and with its formation ohmic contact, one AlGaInP distributed Bragg reflector 42 is formed on the n type GaAs substrate 41, one n type AlGaInP bond course 43 is formed on the distributed Bragg reflector 42, one AlGaInP luminescent layer 44 is formed on the n type AlGaInP bond course 43, one p type AlGaInP bond course 45 is formed on the luminescent layer 44, one p type Window layer 46 is formed on the p type AlGaInP bond course 45, Window layer 46 should adopt as GaP, GaAsP, GaInP, or transparent material such as AlGaAs is made, a n+ type reverse tunnel layer 47 that comprises InGaN and have a high carrier concentration is formed on the Window layer 46, in this embodiment, the carrier concentration of n+ type reverse tunnel layer 47 is 1.5e20/cm
3, thickness is about 20 dusts, and an ITO transparency conducting layer 48 is formed on the n+ type reverse tunnel layer 47, and a p type electrode 49 is formed on the transparency conducting layer 48.In this embodiment, AlGaInP distributed Bragg reflector 42 can be economized and be removed.
The above only is that scope of the present invention is not limited to these preferred embodiments, and is all according to any change that the present invention did, and all belongs to the scope of claim of the present invention in order to convenient explanation the present invention.For example, the single quantum well structure that the InGaN multiple quantum well light emitting layer 14 in this first preferred embodiment can those skilled in the art replaces, or replaces with pure InGaN luminescent layer; Again for example, economize to remove gallium nitride resilient coating 11/ or p type contact layer 16, not etching transparency conducting layer 17 or 17a and p type electrode 18 is formed directly on transparency conducting layer 17 or the 17a, also obvious neither disengaging spirit of the present invention and scope.In addition, obviously also can be used in light-emitting diode other species compound semiconductor devices in addition according to reverse tunnel layer of the present invention, between a metal or a metal conductive oxide layer and a compound semiconductor layer, provide contact action, also neither departing from the scope of the present invention.Again, notion of the present invention obviously also can be applicable to have in the led configurations of transparent conductive substrate.
Claims (9)
1. light-emitting diode with reverse tunnel layer comprises:
A semiconductor laminated structure, comprise a luminescent layer, have first conductivity and be combined in one first semiconductor layer of this first first type surface and have second conductivity and be combined in one second semiconductor layer of this second first type surface, this luminescent layer, this first semiconductor layer, and the common polarity that forms a first direction of this second semiconductor layer with one first first type surface and one second first type surface;
One n+ type reverse tunnel layer, its have first conductivity and be formed on this semiconductor laminated on, itself and this semiconductor laminated formed p-n connects the polarity that mask has second direction, and this first direction and this second direction are rightabouts; And
One transparency conducting layer is formed on this n+ type reverse tunnel layer.
2. light-emitting diode with reverse tunnel layer comprises:
One luminescent layer has one first first type surface and one second first type surface;
One n type bond course has one first first type surface and one second first type surface, and its second first type surface is combined on this first first type surface of this luminescent layer;
One p type bond course has one first first type surface and one second first type surface, and its first first type surface is combined on this second first type surface of this luminescent layer;
One n+ type reverse tunnel layer is incorporated on this second first type surface of this p type bond course; And
One transparency conducting layer is formed on this n+ type reverse tunnel layer.
3. a kind of light-emitting diode with reverse tunnel layer as claimed in claim 2, wherein this transparency conducting layer comprises a kind of material that is selected from Ni/Au, ITO, CTO and the constituent material group of TiWN institute.
4. light-emitting diode with reverse tunnel layer comprises:
One substrate;
One resilient coating is formed on this substrate;
One n type contact layer is formed on this resilient coating, and has one first upper surface portion and one second upper surface portion;
One n type bond course is formed on this first upper surface portion of this n type contact layer;
One luminescent layer is formed on this n type bond course;
One p type bond course is formed on this luminescent layer;
One p type contact layer is formed on this p type bond course;
One n+ type reverse tunnel layer is formed on this p type contact layer;
One transparency conducting layer is formed on this n+ type reverse tunnel layer, wherein and form a hollow bulb, makes exposed portions serve n+ type reverse tunnel layer;
One p type electrode is formed on this exposed portions serve of this n+ type reverse tunnel layer, and contacts with this transparency conducting layer; And
One n type electrode is formed on this second upper surface portion of this n type contact layer.
5. a kind of light-emitting diode with reverse tunnel layer as claimed in claim 4, wherein this transparency conducting layer comprises a kind of material that is selected from Ni/Au, ITO, CTO and the constituent material group of TiWN institute.
6. a kind of light-emitting diode with reverse tunnel layer as claimed in claim 4, wherein this n+ type reverse tunnel layer comprises a kind of material that is selected from the constituent material group of the gallium nitride based material of InGaN, GaN and other institute.
7. light-emitting diode with reverse tunnel layer comprises:
One n type electrode;
One n type GaAs substrate, it has one first main surface and one second main surface, forms ohmic contact between this first main surface and this n type electrode;
One n type AlGaInP bond course is formed on this n type GaAs substrate;
One AlGaInP luminescent layer is formed on this n type AlGaInP bond course;
One p type AlGaInP bond course is formed on this luminescent layer;
One p type Window layer is formed on this p type AlGaInP bond course;
One n+ type reverse tunnel layer is formed on this p type Window layer;
One transparency conducting layer is formed on this n+ type reverse tunnel layer; And
One p type electrode is formed on this transparency conducting layer.
8. light-emitting diode with reverse tunnel layer comprises:
One n type electrode;
One n type GaAs substrate, it has one first main surface and one second main surface, forms ohmic contact between this first main surface and this n type electrode;
One AlGaInP distributed Bragg reflector is formed on this second main surface of this n type GaAs substrate;
One n type AlGaInP bond course is formed on this AlGaInP distributed Bragg reflector;
One AlGaInP luminescent layer is formed on this n type AlGaInP bond course;
One p type AlGaInP bond course is formed on this luminescent layer;
One p type Window layer is formed on this p type AlGaInP bond course;
One n+ type reverse tunnel layer is formed on this p type Window layer;
One transparency conducting layer is formed on this n+ type reverse tunnel layer; And
One p type electrode is formed on this transparency conducting layer.
9. compound semiconductor with reverse tunnel layer comprises:
One p type electrode;
One n type electrode;
One n+ type reverse tunnel layer, it is connected between this p type electrode and this n type electrode in the electric connection mode, when electric current from this p type electrode stream when this n type electrode, be to pass this n+ type reverse tunnel layer by the tunnelling effect; And
One conductive layer, comprise a kind of material that is selected from metal and constituent material group of metal oxide materials institute, and be formed on this n+ type reverse tunnel layer, wherein the electric current that flows out from this p type electrode passes through this conductive layer and this n+ type reverse tunnel layer in regular turn, flow to this n type electroplax at last.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001323970A CN1159774C (en) | 2000-11-10 | 2000-11-10 | LED with reverse tunnel layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001323970A CN1159774C (en) | 2000-11-10 | 2000-11-10 | LED with reverse tunnel layer |
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| CN1353466A true CN1353466A (en) | 2002-06-12 |
| CN1159774C CN1159774C (en) | 2004-07-28 |
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| CNB001323970A Expired - Lifetime CN1159774C (en) | 2000-11-10 | 2000-11-10 | LED with reverse tunnel layer |
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| CN100438090C (en) * | 2004-10-08 | 2008-11-26 | 晶元光电股份有限公司 | Light-emitting component with high lightening effect |
| CN1819255B (en) * | 2005-02-03 | 2010-06-02 | 范朝阳 | Micro-led based high voltage ac/dc indicator lamp |
| CN102255025A (en) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode |
| CN102664225A (en) * | 2012-04-18 | 2012-09-12 | 浙江大学 | Light-emitting diode and preparation method thereof |
| CN101834240B (en) * | 2009-03-11 | 2013-07-03 | 旭明光电股份有限公司 | Light-emitting diode with high-reflectivity contact electrode and manufacturing method thereof |
| CN103633206A (en) * | 2012-08-24 | 2014-03-12 | 苏州纳方科技发展有限公司 | GaN-based light-emitting diode and preparation method and application thereof |
| CN104425669A (en) * | 2013-08-23 | 2015-03-18 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN104733581A (en) * | 2013-12-23 | 2015-06-24 | 李德财 | Light emitting diode |
| CN105977355A (en) * | 2016-05-09 | 2016-09-28 | 华灿光电股份有限公司 | LED epitaxial wafer and preparation method thereof |
| CN106848012A (en) * | 2017-02-08 | 2017-06-13 | 华南师范大学 | A kind of LED structure |
| CN109346579A (en) * | 2018-08-13 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109449263A (en) * | 2018-10-30 | 2019-03-08 | 广东工业大学 | A kind of light emitting diode and preparation method thereof |
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2000
- 2000-11-10 CN CNB001323970A patent/CN1159774C/en not_active Expired - Lifetime
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| CN100438090C (en) * | 2004-10-08 | 2008-11-26 | 晶元光电股份有限公司 | Light-emitting component with high lightening effect |
| CN1819255B (en) * | 2005-02-03 | 2010-06-02 | 范朝阳 | Micro-led based high voltage ac/dc indicator lamp |
| CN101834240B (en) * | 2009-03-11 | 2013-07-03 | 旭明光电股份有限公司 | Light-emitting diode with high-reflectivity contact electrode and manufacturing method thereof |
| CN102255025A (en) * | 2010-05-18 | 2011-11-23 | 展晶科技(深圳)有限公司 | Light emitting diode |
| CN102664225A (en) * | 2012-04-18 | 2012-09-12 | 浙江大学 | Light-emitting diode and preparation method thereof |
| CN103633206B (en) * | 2012-08-24 | 2016-08-17 | 苏州纳方科技发展有限公司 | GaN base light emitting diode, its preparation method and application |
| CN103633206A (en) * | 2012-08-24 | 2014-03-12 | 苏州纳方科技发展有限公司 | GaN-based light-emitting diode and preparation method and application thereof |
| CN104425669A (en) * | 2013-08-23 | 2015-03-18 | 上海蓝光科技有限公司 | Light-emitting diode and manufacturing method thereof |
| CN104733581A (en) * | 2013-12-23 | 2015-06-24 | 李德财 | Light emitting diode |
| CN105977355A (en) * | 2016-05-09 | 2016-09-28 | 华灿光电股份有限公司 | LED epitaxial wafer and preparation method thereof |
| CN106848012A (en) * | 2017-02-08 | 2017-06-13 | 华南师范大学 | A kind of LED structure |
| CN109346579A (en) * | 2018-08-13 | 2019-02-15 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109449263A (en) * | 2018-10-30 | 2019-03-08 | 广东工业大学 | A kind of light emitting diode and preparation method thereof |
| CN110265516A (en) * | 2019-05-23 | 2019-09-20 | 武汉大学 | A kind of deep ultraviolet LED chip and preparation method thereof |
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| CN1159774C (en) | 2004-07-28 |
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