CN102201427B - Light emitting element - Google Patents
Light emitting element Download PDFInfo
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- CN102201427B CN102201427B CN 201010144275 CN201010144275A CN102201427B CN 102201427 B CN102201427 B CN 102201427B CN 201010144275 CN201010144275 CN 201010144275 CN 201010144275 A CN201010144275 A CN 201010144275A CN 102201427 B CN102201427 B CN 102201427B
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Abstract
The invention discloses a light emitting element, comprising a carrier, a conductive joint structure formed on the carrier, an epitaxial structure formed on the conductive joint structure, and at least one insulation part arranged between the epitaxial structure and the conductive joint structure, wherein the epitaxial structure includes a first light emitting lamination layer and a second light emitting lamination layer, wherein the first light emitting lamination layer is provided with two electrodes with different polarities on the surface; the bottom part of the second light emitting lamination layer is electrically conducted to the conductive joint structure while the surface of the second light emitting lamination layer is provided with an electrode. The insulation part is arranged under the first light emitting lamination layer such that the first light emitting lamination layer is insulated from the conductive joint structure and is matched with at least one metal lead placed on the surface of the light emitting element for electrically connecting with each light emitting lamination layer through the conductive joint structure, thus the two light emitting lamination layers are connected in parallel or in series.
Description
Technical field
The present invention relates to a light-emitting component, especially relate to a light-emitting component with light emitting diode matrix.
Background technology
The principle of luminosity of light-emitting diode (LED) is not identical with conventional light source with structure, have the advantages such as power consumption is low, component life long, need not warm up the lamp time, reaction speed is fast, add that its volume is little, vibration resistance, be fit to volume production, easily the fit applications demand is made the element of minimum or array, and the application on market is rather extensive.For example, optical display, laser diode, traffic sign, data storage device, communication device, lighting device and medical treatment device etc.
Traditional array LED as shown in Figure 1, comprises a sapphire insulated substrate 10, a plurality of luminous lamination 12 is formed on the sapphire insulated substrate 10, comprises a p-type semiconductor layer 121, a luminescent layer 122 and a N-shaped semiconductor layer 123.Because sapphire substrate 10 is non-conductive, therefore after forming irrigation canals and ditches 14 by etching between a plurality of luminous laminations 12, can make each luminous lamination 12 insulated from each other, pass through again in addition partially-etched a plurality of luminous laminations 12 to N-shaped semiconductor layer 123, respectively at forming one first electrode 18 and one second electrode 16 on N-shaped semiconductor layer 123 exposed regions and the p-type semiconductor layer 121.The first electrode 18 and the second electrode 16 that connect a plurality of luminous laminations 12 by plain conductor 19 selectivity are so that form the circuit of serial or parallel connection again between a plurality of luminous lamination 12.
Summary of the invention
The present invention proposes a light-emitting component, comprising: a carrier; One conductive bond structure is formed on the carrier; One epitaxial structure is formed on the conductive bond structure, includes: at least one first luminous lamination, comprise one first semiconductor layer and one second semiconductor layer, and wherein have respectively an electrode on the first semiconductor layer and the second semiconductor layer surface; And at least one second luminous lamination, comprise one the 3rd semiconductor layer and one the 4th semiconductor layer, wherein the 3rd semiconductor layer bottom surface is electrically connected on the conductive bond structure, has an electrode on the 4th semiconductor layer surface; At least one insulation division, it is positioned between the first luminous lamination and conductive bond structure, so that the first luminous laminated insulation is in the conductive bond structure; And at least one plain conductor, it is located at the light-emitting component surface, for electrically conduct by the conductive bond structure the first luminous lamination and the second luminous lamination.
According to one embodiment of the invention, carrier can be conductive semiconductor substrate or metal substrate.Back of the body gold can be set in the conductive semiconductor substrate bottom surface or by the metal substrate bottom surface connecting an external power source, but and external power source by all second luminous laminations of back of the body gold-carrier-conductive bond structure conducting.
According to another embodiment of the present invention, when carrier is an insulated substrate, can make the superiors of conductive bond structure that one welded gasket is set, its material for example is metal oxide or metal, connect wire to an external power source by welded gasket, to reach the function same with above-mentioned back of the body metallographic.The welded gasket of the present embodiment directly is located on the conductive bond structure, and the back of the body gold of previous embodiment then electrically conducts in the conductive bond structure by the carrier with conductivity.The two all has the function that can be electrically connected on external power source.
The conductive bond structure directly is electrically connected with the second luminous lamination, and the first luminous lamination electrically conducts with the second luminous lamination after then utilizing plain conductor to connect the conductive bond structure, can simplify the operation that plain conductor is set thus, and then effectively promote production capacity.
Description of drawings
Fig. 1 is the light-emitting component schematic diagram that one of prior art has the luminous lamination of array;
Fig. 2 is light-emitting component the first embodiment schematic diagram of the present invention;
Fig. 3 A to Fig. 3 D is respectively the luminous lamination series-parallel circuit figure that uses light-emitting component the first embodiment of the present invention;
Fig. 4 is light-emitting component the second embodiment schematic diagram of the present invention;
Fig. 5 is light-emitting component the 3rd embodiment schematic diagram of the present invention; And
Fig. 6 is light-emitting component the 4th embodiment schematic diagram of the present invention.
The main element symbol description
Sapphire insulated substrate 10
N-shaped semiconductor layer 121
P-type semiconductor layer 123
Irrigation canals and ditches 14
The first electrode 18
The second electrode 16
Insulation division 208,408,508,608
The first luminous lamination 212,212 ', 212 ", 412,512,512 ', 612
Electrode 2122,2122 ', 2122 ", 5122,5122 '
Electrode 2145,2145 ', 5145,5145 '
Transparency conducting layer 215,603,503
Knitting layer 204,604,207,507
The first semiconductor layer 2121
The second semiconductor layer 2124
The 3rd semiconductor layer 2141
The 4th semiconductor layer 2144
Current- diffusion layer 2126,2146
Light-emitting component 200,400,500,600
Carrier 202,402,502,601
Conductive bond structure 203,404,504,602
Epitaxial structure 206,406,506,606
Plain conductor 210,410,510,610
The second luminous lamination 214,214 ', 414,514,514 ', 614
Electrode 2125,2125 ', 2125 ", 5125,5125 '
Reflector 217,605,505
Dielectric medium 211,411,511,611
Welded gasket 618
DC power supply DC1, DC2
AC power AC1, AC2
Embodiment
The first embodiment
See also Fig. 2, light-emitting component 200 includes a carrier 202, and is formed at epitaxial structure 206 that conductive bond structure 203, on the carrier 202 is positioned at conductive bond structure 203 tops, at least one insulation division 208 and at least one plain conductor 210 that is laid in light-emitting component 200 surfaces of being located at 203 on epitaxial structure 206 and conductive bond structure.
Carrier 202 can be a conductive semiconductor substrate or metal substrate, and conductive bond structure 203 can be a laminated construction with conductivity.
The first luminous lamination 212 and the second luminous lamination 214 can be the luminous lamination with same structure, and meaning is that the first luminous lamination 212 and the second luminous lamination 214 can be formed simultaneously by same epitaxial substrate (not shown).Generation type about the first luminous lamination 212 and the second luminous lamination 214, can be pre-formed aforementioned unprocessed epitaxial structure 206 by aforesaid epitaxial substrate, unprocessed epitaxial structure 206 is engaged with conductive bond structure 203 together with epitaxial substrate, recycling etching visualization way defines the first luminous lamination 212 and the second luminous lamination 214 behind the removable epitaxial substrate afterwards again.Conductive bond structure 203 can comprise a knitting layer 204 with conductivity, be formed at the reflector 217 on the knitting layer 204 and be formed at transparency conducting layer 215 on the reflector 217, transparency conducting layer 215 can be embedded with aforesaid insulation division 208 in the position of corresponding the first luminous lamination 212, and in order to promote the current spread effect of the first luminous lamination 212, the first luminous lamination 212 bottoms have a current-diffusion layer 2126.
Aforementioned transparency conducting layer 215 comprises at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide and the constituent material group of zinc-tin oxide institute.Aforementioned reflector 217 comprises at least a material or other the replaceable material that is selected from Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, the constituent material group of PbSn, AuZn institute.
The first luminous lamination 212 is from from bottom to top including at least one first semiconductor layer 2121 near carrier 202, having electrode 2122, on it is formed at the subregional luminescent layer 2123 in the first semiconductor layer 2121 tops, reaches second semiconductor layer 2124 that is formed on the luminescent layer 2123, has electrode 2125 on it, wherein be embedded with aforesaid insulation division 208 in the transparency conducting layer 215 of the first semiconductor layer 2121 belows, so that the first luminous lamination 212 electrically isolates from conductive bond structure 203.The second luminous lamination 214 then can include one the 3rd semiconductor layer 2141 from bottom to top at least, its bottom surface be connected to conductive bond structure 203, a luminescent layer 2143, and one the 4th semiconductor layer, 2144 its surfaces have electrode 2145, wherein the first semiconductor layer 2121 and the 3rd semiconductor layer 2141 can be the p-type semiconductor layer; The second semiconductor layer 2124 and the 4th semiconductor layer 2144 can be the N-shaped semiconductor layer.The polarity of the respectively institute tool semiconductor layer of the above-described first luminous lamination 212 or the second luminous lamination 214 also can be exchanged, for example the first semiconductor layer 2121 and the 3rd semiconductor layer 2141 can be the N-shaped semiconductor layer, and the second semiconductor layer 2124 and the 4th semiconductor layer 2144 can be the p-type semiconductor layer.
The aforementioned first luminous lamination 212 and the second luminous lamination 214 can comprise at least a material that is selected from AlGaInP, AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.Wherein the structure of the first luminous lamination 212 and the second luminous lamination 214 can be single heterojunction structure (singleheterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi-layer quantum well (multi-quantum well; MQW).Aforementioned dielectric section 208 can be selected from SiO
2And SiN
xAt least a material in institute's constituent material cohort.
In addition, can be formed with respectively the current-diffusion layer 2126 with alligatoring structure in the first semiconductor layer 2121 of the first luminous lamination 212 and the second semiconductor layer 2124.After can first alligatoring being carried out on the surface of the first semiconductor layer 2121 and the second semiconductor layer 2124, on coarse surface, form again the identical electric conducting material of one deck and transparency conducting layer 215, with formation current-diffusion layer 2126; In the second luminous lamination 214 also correspondence be provided with current-diffusion layer 2146, wherein the 3rd semiconductor layer 2141 bottom surfaces are the current-diffusion layer 2146 of tool alligatoring form.By current- diffusion layer 2126 and 2146, electric current is distributed in the first luminous lamination 212 and the second luminous lamination 214 comparatively fifty-fifty.The thickness of the current-diffusion layer 2126 of the first semiconductor layer 2121 bottoms can be slightly larger than current-diffusion layer 2146 to promote the current spread effect of the first luminous lamination 212.The 3rd semiconductor layer 2141 bottom surfaces of the second luminous lamination 214 can directly be incorporated into transparency conducting layer 215, and the interval is formed with a plurality of flat surfaces (not shown) in the current-diffusion layer 2146 of alligatoring form, with and 215 of transparency conducting layers form good ohmic contact.
The plain conductor 210 that is formed at light-emitting component 200 surfaces mainly can be connected to transparency conducting layer 215 in order to electrode 2125 or the electrode 2122 with the first luminous lamination 212, so with the second luminous lamination 214 conductings.Be connected in transparency conducting layer 215 although only illustrate the first luminous lamination 212 among Fig. 2 by plain conductor 210, yet the formation position of plain conductor 210 is not the specific series parallel structure of expression in the accompanying drawing, and the plain conductor 210 also needs of visual circuit directly is connected to 214 of two first luminous laminations 212 or two second luminous laminations 214 or the first luminous lamination 212 and the second luminous laminations.Plain conductor 210 can form by the gold-tinted manufacture craft, and 206 of epitaxial structures are separated by with a dielectric medium 211.Therefore, the bottom surface of the 3rd semiconductor layer 2141 by the second luminous lamination 214 be connected to conductive bond structure 203, and plain conductor 210 be laid in light-emitting component 200 surfaces and can make each first luminous lamination 212 of light-emitting component 200 and the second luminous lamination 214 reach parallel connection, series connection or have the connection of connection in series-parallel combination.
Please arrange in pairs or groups and consult Fig. 3 A, can have one first luminous lamination 212 on the light-emitting component 200 of first embodiment of the invention, and one second luminous lamination 214, and the DC power supply DC 1 of two luminous laminations and an outside forms the circuit of connecting, as shown in the figure, the positive pole of DC power supply DC1 is connected in the electrode 2122 of the first luminous lamination 212, electric current is flowed out by electrode 2125 after can entering the first luminous lamination 212 by electrode 2122, and 214 of the electrode 2125 of the first luminous lamination 212 and the second luminous laminations can connect by plain conductor 210, plain conductor 210 1 ends are connected in electrode 2125, the other end then is connected in transparency conducting layer 215, electric current enters the second luminous lamination 214 by the 3rd semiconductor layer 2141 thus, and by electrode 2145 outflows, the negative pole of DC power supply DC1 then is connected in the electrode 2145 of the second luminous lamination 214, makes thus the first luminous lamination 212 of series connection, the second luminous lamination 214 energisings and luminous.The second luminous lamination 214 a plurality of first luminous lamination 212 of in fact can connecting, a plurality of first 212 of luminous laminations can utilize aforementioned metal wire 210 to connect, and the first luminous lamination 212 that is positioned at whole series circuit end points then is connected with DC power supply DC1.
See also Fig. 3 B, can have one first luminous lamination 212 on the light-emitting component 200 of first embodiment of the invention, and one second luminous lamination 214, and two luminous laminations form a circuit in parallel with the DC power supply DC2 of an outside, the electrode 2122 of the first luminous lamination 212 is connected in conductive bond structure 203 with plain conductor 210, the positive pole of DC power supply DC2 is connected in metal level 213, electric current is by carrier 202, conductive bond structure 203 rear shuntings and enter the first luminous lamination 212 by electrode 2122 respectively, and enter the second luminous lamination 214 by the 3rd semiconductor layer 2141, the negative pole of DC power supply DC2 then is connected to respectively the electrode 2125 of the first luminous lamination 212, and the electrode 2145 of the second luminous lamination 214, so that the whole DC power supply DC2 that refluxes afterwards of electric current remittance.Can think and be, the second luminous lamination 214 can continue the series connection one group of first luminous lamination 212, and form a series connection circuit, and organize the first luminous lamination 212 by another again and be connected into another circuit, can obtain a circuit in parallel by two circuit being connected in DC power supply DC2.Can think and be, epitaxial structure can comprise a plurality of second luminous lamination 214 and a plurality of first luminous lamination 212, by plain conductor 210 a plurality of first luminous folded 212 layers are connected into many group series circuits it is connected with each second luminous lamination 214 respectively by plain conductor 210, the DC power supply of arranging in pairs or groups again DC2 can consist of a circuit in parallel.
See also Fig. 3 C, can have one first luminous lamination 212 on the light-emitting component 200 of first embodiment of the invention, reach one second luminous lamination 214, and the AC power AC1 of two luminous laminations and an outside forms a reverse parallel connection circuit, the electrode 2125 of the first luminous lamination 212, and the 3rd semiconductor layer 2141 of the second luminous lamination 214 by plain conductor 210 and 203 conductings of conductive bond structure.AC power AC1 one end is connected to metal level 213 being connected to the 3rd semiconductor layer 2141 of the second luminous lamination 214 and the electrode 2125 of the first luminous lamination 212 by carrier 202 and conductive bond structure 203, and the other end of AC power AC1 then is connected directly to electrode 2122, and the electrode 2145 of the second luminous lamination 214 of the first luminous lamination 212.Can think and be, the second luminous lamination 214 can continue the series connection one group of first luminous lamination 212, and form a series connection circuit, and organize the first luminous lamination 212 by another again and be connected into another circuit, can obtain a reverse parallel connection circuit by two circuit being connected in AC power AC1.
See also Fig. 3 D, can have most the first luminous laminations 212 (212 ') on the light-emitting component 200 of first embodiment of the invention, reach most the second luminous laminations 214 (214 '), and the AC power AC2 of most luminous lamination and an outside forms the circuit of a resistance bridge.
Whiston bridge circuit among Fig. 3 D is by the first a plurality of luminous laminations 212,212 ', 212 " and the second a plurality of luminous laminations 214; 214 ' form; wherein; the first luminous lamination 212 and 212 ' that is positioned at peripheral circuit is the electrode 2125 of institute's tool respectively; 2125 ' is jointly to be connected to the first luminous lamination 212 that is positioned at longitudinal circuit by plain conductor 210 " electrode 2122 "; be positioned at the first luminous lamination 212 of longitudinal circuit " then by plain conductor 210 with its electrode 2125 " be connected to conductive bond structure 203, to connect the second luminous lamination 214 that is positioned at peripheral circuit, the 3rd semiconductor layer 2141 of 214 ' difference institute tool, 2141 '.
The end of AC power AC2 can be connected on the electrode 2145 of the electrode 2122 of the first luminous lamination 212 and the second luminous lamination 214; The other end of AC power AC2 then can be connected on the electrode 2145 ' of the electrode 2122 ' of the first luminous lamination 212 ' and the second luminous lamination 214 '.Therefore the first luminous lamination 212, the first luminous lamination 212 ", and the second luminous lamination 214 ' consist of one first circuit of a direction; The first luminous lamination 212 ', the first luminous lamination 212 ", and the second luminous lamination 214 then consist of a second circuit of other direction.The first luminous lamination 212 of the first circuit, the second luminous lamination 214 ' can be not limited to only have single luminous lamination, the first luminous lamination 212 can be in series with a plurality of and form one first rectification circuit, and the second luminous lamination 214 ' also can be connected a plurality of first luminous lamination 212 and be formed one second rectification circuit.The first luminous lamination 212 ' of second circuit, the second luminous lamination 214 can be not limited to only have single luminous lamination, the first luminous lamination 212 ' can be in series with a plurality of and form one the 3rd rectification circuit, and the second luminous lamination 214 also can be connected a plurality of first luminous lamination 212 ' and be formed one the 4th rectification circuit.
Similarly, be positioned at the first luminous lamination 212 that longitudinal circuit shares for first and second circuit " quantity can be not limited to only have one; but can be in series with a plurality of first luminous lamination 212 " and form a main illuminating circuit, with the overall brightness of enhancement light-emitting component 200.
Only it can utilize the peculiar structure of light-emitting component 200 of the present invention to be reached in order to specify several more common circuit in the series-parallel circuit configuration that discloses among Fig. 3 A to Fig. 3 D, and the form of unrestricted light-emitting component of the present invention 200, and general personage also should have the ability to utilize spirit of the present invention with above-described circuit in this area, reaches to differ from series-parallel connected mode that the present embodiment given an example.
The second embodiment
See also Fig. 4, light-emitting component 400 includes a carrier 402, and is formed at epitaxial structure 406 that conductive bond structure 404, on the carrier 402 is positioned at conductive bond structure 404 tops, is located at the insulation division 408 of 404 on epitaxial structure 406 and conductive bond structure and the plain conductor 410 that is laid in light-emitting component 400 surfaces.Has a dielectric medium 411 between plain conductor 410 and epitaxial structure 406 surfaces.
Epitaxial structure 406 can include one or more first luminous lamination 412 and one or more electrically conducts in the second luminous lamination 414 of conductive bond structure 404.And the first luminous lamination 412 and the second luminous lamination 414 can be equal to the luminous lamination described in the first embodiment.
The present embodiment and the first embodiment are roughly the same, and difference only is that conductive bond structure 404 is an electrically conducting transparent articulamentum, and carrier 402 is a transparent conductive substrate, increases thus lighting area.
The 3rd embodiment
See also Fig. 5, light-emitting component 500 includes a carrier 502, and is formed at epitaxial structure 506 that conductive bond structure 504, on the carrier 502 is positioned at conductive bond structure 504 tops, at least one insulation division 508 and at least one plain conductor 510 that is laid in light-emitting component 500 surfaces of being located at 504 on epitaxial structure 506 and conductive bond structure.Conductive bond structure 504 comprises a knitting layer 507, be formed at the reflector 505 on the knitting layer 507 and be formed at transparency conducting layer 503 on the reflector 505.Has a dielectric medium 511 between plain conductor 510 and epitaxial structure 506 surfaces.
Epitaxial structure 506 can include the first luminous lamination 512 and 512 ' and electrically conduct in the second luminous lamination 514,514 ' of conductive bond structure 504.
The present embodiment can slightly be done change from the first or second embodiment and reach, and is mainly that from the difference of first and second embodiment the luminous lamination that comprises the first luminous lamination 512 (512 '), reaches the second luminous lamination 514 (514 ') can have respectively different epitaxial structures.Among Fig. 5, the first luminous lamination 512 and 512 ' of light-emitting component 500 can be grown up in different epitaxial substrates, and so that in the first luminous lamination 512 the first semiconductor layer 5121 of luminescent layer 5123 both sides and the second semiconductor layer 5124 be respectively p-type and N-shaped; The first semiconductor layer 5121 ' and second semiconductor layer 5124 ' of luminescent layer 5123 ' both sides are respectively N-shaped and p-type in the first luminous lamination 512 '; And/or the second luminous lamination 514 and 514 ' of light-emitting component 500 can grow up in different epitaxial substrates, and so that in the second luminous lamination 514 the 3rd semiconductor layer 5141 of luminescent layer 5143 both sides and the 4th semiconductor layer 5144 be respectively p-type and N-shaped; The 3rd semiconductor layer 5141 ' and the 4th semiconductor layer 5144 ' of luminescent layer 5143 ' both sides are respectively N-shaped and p-type in the second luminous lamination 514 '; And/or first luminous lamination 512 and the second luminous lamination 514 grow up respectively in different epitaxial substrates, for example the first semiconductor layer 5121 has respectively different polarity from the 3rd semiconductor layer 5141, yet the polarity between the first semiconductor layer 5121 and 5121 ' can be identical.
The 4th embodiment
See also Fig. 6, light-emitting component 600 includes and one is formed at epitaxial structure 606 on the conductive bond structure 602 for the carrier 601, of insulated substrate is formed at conductive bond structure 602, on the carrier 601, is located at the insulation division 608 of 602 on epitaxial structure 606 and conductive bond structure and the plain conductor 610 that is laid in light-emitting component 600 surfaces, wherein, has a dielectric medium 611 between plain conductor 610 and epitaxial structure 606 surfaces; Conductive bond structure 602 comprises the knitting layer 604 that is formed on the carrier 601, be formed at the reflector 605 on the knitting layer and be formed at transparency conducting layer 603 on the reflector.
The first luminous lamination 612 of epitaxial structure 606 and the second luminous lamination 614 can be equal to the structure among aforementioned each embodiment.
The present embodiment and previous embodiment difference are that carrier 601 is insulated substrates, get final product and only need the transparency conducting layer 603 of the superiors to have conductive capability in the conductive bond structure 602.Can be provided with in the surface of transparency conducting layer 603 welded gasket 618 to be connected in an external power source (not shown) by the routing mode.Carrier 601 can be silicon rubber (silicone), glass, quartz, pottery, alloy or printed circuit board (PCB) (PCB).Transparency conducting layer 603 can be at least a material in tin indium oxide, cadmium tin, antimony tin, zinc oxide and the constituent material group of zinc-tin oxide institute.Reflector 605 can be selected from least a material or other the replaceable material in Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, the constituent material group of PbSn, AuZn institute.
Cited each embodiment of the present invention is not to limit the scope of the invention only in order to the present invention to be described.Anyone any aobvious and easy to know modification made for the present invention or change neither disengaging spirit of the present invention and scope.
Claims (10)
1. light-emitting component comprises:
Carrier;
The conductive bond structure is formed on this carrier;
Epitaxial structure is positioned on this conductive bond structure, includes:
At least one first luminous lamination comprises the first semiconductor layer and the second semiconductor layer, wherein has respectively an electrode on this first semiconductor layer and this second semiconductor layer surface, and this first semiconductor layer this second semiconductor layer near this carrier; And
At least one second luminous lamination, comprise its bottom surface of the 3rd semiconductor layer electrically conduct in this conductive bond structure, and the 4th semiconductor layer its be positioned at the 3rd semiconductor layer top and the surface has an electrode; And
At least one insulation division, it is positioned between this first luminous lamination and this conductive bond structure so that respectively this first luminous laminated insulation in this conductive bond structure;
Wherein the polarity of this first semiconductor layer of this at least one the first luminous lamination is different from the polarity of the 3rd semiconductor layer of this at least one the second luminous lamination.
2. light-emitting component as claimed in claim 1, wherein, this conductive bond structure comprises an electrically conducting transparent articulamentum, this insulating barrier is embedded in this electrically conducting transparent articulamentum, and this carrier is a transparent conductive substrate.
3. light-emitting component as claimed in claim 1, wherein, this carrier is insulated substrate, and this conductive bond body structure surface is provided with welded gasket, or this carrier is that its bottom of conductive semiconductor substrate has a metal level, or this carrier is metal substrate.
4. light-emitting component as claimed in claim 3, wherein, this conductive bond structure comprises that the knitting layer with conductivity is formed on this carrier, the reflector is formed on this knitting layer, and transparency conducting layer be formed between this reflector and this epitaxial structure, wherein this insulation division is embedded in this transparency conducting layer.
5. light-emitting component as claimed in claim 1, wherein, include in those first luminous laminations the first luminous lamination that this first semiconductor layer and this second semiconductor layer be respectively p-type and N-shaped, and this first semiconductor layer and this second semiconductor layer be respectively the first luminous lamination of N-shaped and p-type; And/or include in those second luminous laminations the second luminous lamination that the 3rd semiconductor layer and the 4th semiconductor layer be respectively p-type and N-shaped, and the 3rd semiconductor layer and the 4th semiconductor layer be respectively the second luminous lamination of N-shaped and p-type.
6. light-emitting component as claimed in claim 1, comprise that also at least one plain conductor is located at this light-emitting component surperficial, for electrically conduct at least this first luminous lamination and this second luminous lamination by this conductive bond structure, wherein, this plain conductor is directly connected between this first luminous lamination and the second luminous lamination; Or this plain conductor is directly connected in two these first luminous laminations; Or this plain conductor is directly connected in two these second luminous laminations.
7. light-emitting component as claimed in claim 6, wherein this second luminous lamination is electrically connected on this first luminous lamination by this conductive bond structure and this plain conductor, and this epitaxial structure is by the DC power supply formation one of this plain conductor and an outside connect circuit or a circuit in parallel, or the AC power of the outside of arranging in pairs or groups and consist of a reverse parallel connection circuit.
8. light-emitting component as claimed in claim 6, wherein, this epitaxial structure comprises this a plurality of second luminous laminations and this a plurality of first luminous laminations, by this plain conductor those first luminous laminations are connected into many group series circuits, and those series circuits and be connected with those second luminous laminations respectively by this plain conductor, the DC power supply of the outside of arranging in pairs or groups again and consist of a circuit in parallel.
9. light-emitting component as claimed in claim 6, wherein, this epitaxial structure consists of a whiston bridge circuit with this plain conductor and is connected with the AC power of an outside, this whiston bridge circuit comprises: the first circuit comprises the first rectification circuit of being in series with this first luminous lamination, is in series with the main illuminating circuit of this first luminous lamination and has the second rectification circuit of this second luminous lamination; And second circuit, comprise the 3rd rectification circuit, this main illuminating circuit that is in series with this first luminous lamination and the 4th rectification circuit with this second luminous lamination, wherein be electrically connected by this plain conductor between this main illuminating circuit and this first rectification circuit and the 3rd rectification circuit, be electrically connected by this plain conductor and this conductive bond structure and should share between illuminating circuit and this second rectification circuit and the 4th rectification circuit.
10. light-emitting component as claimed in claim 9, wherein this second rectification circuit and the 4th rectification circuit also are in series with respectively this a plurality of first luminous laminations.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010144275 CN102201427B (en) | 2010-03-22 | 2010-03-22 | Light emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010144275 CN102201427B (en) | 2010-03-22 | 2010-03-22 | Light emitting element |
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| CN102201427A CN102201427A (en) | 2011-09-28 |
| CN102201427B true CN102201427B (en) | 2013-03-27 |
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| CN 201010144275 Active CN102201427B (en) | 2010-03-22 | 2010-03-22 | Light emitting element |
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| TWI617056B (en) * | 2016-10-28 | 2018-03-01 | 隆達電子股份有限公司 | Light-emitting-diode chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585142A (en) * | 2004-06-10 | 2005-02-23 | 颜怀玮 | AC and DC power supply two-purpose bridge illuminating LED and producing method thereof |
| CN101145570A (en) * | 2006-09-13 | 2008-03-19 | 海立尔股份有限公司 | LED structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7880182B2 (en) * | 2002-07-15 | 2011-02-01 | Epistar Corporation | Light-emitting element array |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1585142A (en) * | 2004-06-10 | 2005-02-23 | 颜怀玮 | AC and DC power supply two-purpose bridge illuminating LED and producing method thereof |
| CN101145570A (en) * | 2006-09-13 | 2008-03-19 | 海立尔股份有限公司 | LED structure |
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