TWI400788B - Light-emitting element - Google Patents

Description

Light-emitting element

The invention relates to a light-emitting element, in particular a light-emitting element having an array of light-emitting diodes.

The principle and structure of the light-emitting diode (LED) are different from those of the traditional light source, and have the advantages of low power consumption, long component life, no need for warming time, fast reaction speed, etc., plus small size and vibration resistance. It is suitable for mass production, and it is easy to make small or array components with application requirements. It is widely used in the market. For example, an optical display device, a laser diode, a traffic sign, a data storage device, a communication device, a lighting device, and a medical device.

The conventional array type light-emitting diode includes a sapphire insulating substrate 10 and a plurality of light-emitting layers 12 formed on the sapphire insulating substrate 10, and includes a p-type semiconductor layer 121 and a light-emitting layer 122, as shown in FIG. And an n-type semiconductor layer 123. Since the sapphire substrate 10 is not electrically conductive, the light-emitting layers 12 can be insulated from each other after the trenches 14 are formed by etching between the plurality of light-emitting layers 12, and the plurality of light-emitting layers 12 to n-type semiconductor layers are partially etched. 123. Form a first electrode 18 and a second electrode 16 on the exposed region of the n-type semiconductor layer 123 and the p-type semiconductor layer 121, respectively. The first electrode 18 and the second electrode 16 of the plurality of light emitting laminates 12 are selectively connected by the metal wires 19 to form a circuit connected in series or in parallel between the plurality of light emitting laminates 12.

The present invention provides a light-emitting element comprising: a carrier; a conductive bonding structure formed on the carrier; and an epitaxial structure formed on the conductive bonding structure, comprising: at least one first light-emitting layer, including a first a semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer respectively have an electrode on the surface thereof; and at least one second light emitting layer comprises a third semiconductor layer and a fourth semiconductor layer, wherein The bottom surface of the three semiconductor layers is electrically connected to the conductive bonding structure, and the fourth semiconductor layer has an electrode on the surface thereof; at least one insulating portion is disposed between the first light emitting layer and the conductive bonding structure to insulate the first light emitting layer a conductive bonding structure; and at least one metal wire disposed on the surface of the light emitting element for electrically conducting the first light emitting layer and the second light emitting layer through the conductive bonding structure.

According to an embodiment of the invention, the carrier may be a conductive semiconductor substrate or a metal substrate. The back gold may be disposed on the bottom surface of the conductive semiconductor substrate or connected to an external power source through the bottom surface of the metal substrate, and the external power source may conduct all the second light emitting laminates through the back gold-carrier-conductive bonding structure.

According to still another embodiment of the present invention, when the carrier is an insulating substrate, a solder pad may be disposed on the uppermost layer of the conductive bonding structure, and the material thereof is, for example, metal oxide or metal, and the wire is connected to an external power source through the solder pad. In order to achieve the same function as the above-mentioned back gold. The solder pads of this embodiment are directly disposed on the conductive bonding structure, and the back gold of the foregoing embodiment is electrically connected to the conductive bonding structure through the conductive carrier. Both have the function of being electrically connected to an external power source.

The conductive bonding structure is directly electrically connected to the second light emitting layer, and the first light emitting layer is electrically connected to the second light emitting layer by connecting the conductive bonding structure with the metal wire, thereby simplifying the process of setting the metal wire, and further Effectively increase production capacity.

First embodiment

Referring to FIG. 2 , the light emitting device 200 includes a carrier 202 , a conductive bonding structure 203 formed on the carrier 202 , an epitaxial structure 206 disposed above the conductive bonding structure 203 , at least one disposed on the epitaxial structure 206 , and conductive bonding The insulating portion 208 between the structures 203 and at least one metal wire 210 disposed on the surface of the light emitting element 200.

The carrier 202 can be a conductive semiconductor substrate or a metal substrate, and the conductive bonding structure 203 can be a laminated structure having conductivity.

The epitaxial structure 206 can include a first light emitting layer 212 having electrodes 1122 and 2125 on the same side that are different in polarity from each other, and at least one second light emitting layer 214 having an electrode 2145 at the top. The bottom surface of the second light emitting layer 214 is electrically connected to the conductive bonding structure 203.

The first light-emitting layer 212 and the second light-emitting layer 214 may be light-emitting layers having the same structure, that is, the first light-emitting layer 212 and the second light-emitting layer 214 may be simultaneously formed by the same epitaxial substrate (not shown). . Regarding the formation manner of the first light-emitting layer 212 and the second light-emitting layer 214, the unprocessed epitaxial structure 206 may be formed in advance by the epitaxial substrate, and the unprocessed epitaxial structure 206 together with the epitaxial substrate and the conductive layer may be formed. The bonding structure 203 is bonded, and then the epitaxial substrate can be removed, and then the etching development method is used to define the first A light emitting layer 212 and a second light emitting layer 214. The conductive bonding structure 203 may include a conductive bonding layer 204, a reflective layer 217 formed on the bonding layer 204, and a transparent conductive layer 215 formed on the reflective layer 217. The transparent conductive layer 215 may be corresponding to the first light emitting stack. The insulating layer 208 is embedded in the layer 212. To promote the current spreading effect of the first light emitting layer 212, the first light emitting layer 212 has a current spreading layer 2126 at the bottom.

The transparent conductive layer 215 includes at least one material selected from the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide. The reflective layer 217 includes at least one material selected from the group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBc, AuGc, Ni, PbSn, and AuZn. Other materials that can be substituted.

The first light emitting layer 212 may include at least a first semiconductor layer 2121 from the bottom closest to the carrier 202, and has an electrode 2122, a light emitting layer 2123 formed on a portion of the first semiconductor layer 2121, and a photo forming layer. The second semiconductor layer 2124 on the light-emitting layer 2123 has an electrode 2125 thereon. The insulating layer 208 is embedded in the transparent conductive layer 215 under the first semiconductor layer 2121 to insulate the first light-emitting layer 212. In the conductive bonding structure 203. The second light emitting layer 214 may include at least a third semiconductor layer 2141 from bottom to top, and the bottom surface of the second light emitting layer 214 is electrically connected to the conductive bonding structure 203, a light emitting layer 2143, and a fourth semiconductor layer 2144 having electrodes 2145 on the surface thereof. The first semiconductor layer 2121 and the third semiconductor layer 2141 may be p-type semiconductor layers; the second semiconductor layer 2124 and the fourth semiconductor layer 2144 may be n-type semiconductor layers. The polarity of the semiconductor layer of the first light-emitting layer 212 or the second light-emitting layer 214 described above may also be reversed. For example, the first semiconductor layer 2121 and the third semiconductor layer 2141 may be n-type semiconductor layers, and the second semiconductor layer 2124 and the fourth semiconductor layer 2144 may be p-type semiconductor layers.

The first light emitting layer 212 and the second light emitting layer 214 may include at least one material selected from the group consisting of AlGaInP, AlN, GaN, AlGaN, InGaN, and AlInGaN. The structure of the first light-emitting layer 212 and the second light-emitting layer 214 may be a single heterostructure (SH), a double heterostructure (DH), or a double-side double heterostructure (double-side double heterostructure; DDH), or multi-quantum well (MQW). The insulating portion 208 may be selected from at least one material selected from the group consisting of SiO ₂ and SiN _x .

In addition, a current diffusion layer 2126 having a roughened structure may be formed in each of the first semiconductor layer 2121 and the second semiconductor layer 2124 of the first light-emitting layer 212. The surface of the first semiconductor layer 2121 and the second semiconductor layer 2124 may be roughened, and then a conductive material similar to the transparent conductive layer 215 is formed on the roughened surface to form a current diffusion layer 2126; the second light stack A current diffusion layer 2146 is also disposed in the layer 214, wherein the bottom surface of the third semiconductor layer 2141 is a current diffusion layer 2146 having a roughened form. The current spreading layers 2126 and 2146 allow the current to be evenly distributed among the first and second light emitting stacks 212, 214. The current diffusion layer 2126 at the bottom of the first semiconductor layer 2121 may be slightly thicker than the current diffusion layer 2146 to enhance the current spreading effect of the first light-emitting layer 212. The bottom surface of the third semiconductor layer 2141 of the second light-emitting layer 214 may be directly bonded to the transparent conductive layer 215, and a plurality of flat surfaces (not shown) are formed in the current-diffusion layer 2146 of the roughened form, and the transparent conductive layer is formed. 215 forms a good ohm contact.

The metal wire 210 formed on the surface of the light-emitting element 200 can be mainly used to conduct the electrode 2125 or the electrode 2122 of the first light-emitting layer 212 to the transparent conductive layer 215, thereby being electrically connected to the second light-emitting layer 214. Although only the first light emitting layer 212 is connected to the transparent conductive layer 215 through the metal wire 210 in FIG. 2, the position of the metal wire 210 in the drawing does not indicate a specific series-parallel structure, and the metal wire 210 can also be seen as a circuit. It is necessary to directly connect between the two first light emitting layers 212, or the two second light emitting layers 214, or between the first light emitting layer 212 and the second light emitting layer 214. The metal wire 210 can be formed by a yellow light process, and is separated from the epitaxial structure 206 by a dielectric 211. Therefore, the first light emitting layer 212 of the light emitting device 200 can be disposed on the surface of the light emitting device 200 by the bottom surface of the third semiconductor layer 2141 of the second light emitting layer 214 being electrically connected to the conductive bonding structure 203 and the metal wire 210. The second luminescent stack 214 is connected in parallel, in series, or in a series-parallel combination.

The carrier 202 may be a conductive semiconductor substrate, and a metal layer 213 may be formed on the bottom surface thereof, or the carrier 202 may be a metal substrate to make the light-emitting element 200 have a gold back structure. When the light emitting device 200 is coupled to the package structure, it can be electrically connected to the second light emitting layer 214 via a back gold connection to an external power source (not shown) and then through the carrier 202 - the conductive bonding structure 203. The external power source can also be electrically connected to the first light emitting stack 212 through the carrier 202 - the conductive bonding structure 203 - the metal wire 210.

Referring to FIG. 3A, the light-emitting element 200 of the first embodiment of the present invention may have a first light-emitting layer 212 and a second light-emitting layer 214, and the two light-emitting layers and an external DC power source DC1. Compose a string As shown in the figure, the positive electrode of the DC power source DC1 is connected to the electrode 2122 of the first light-emitting layer 212, and the current can flow from the electrode 2122 into the first light-emitting layer 212 and then flow out from the electrode 2125, and the first light-emitting layer 212 The electrode 2125 and the second light-emitting layer 214 can be connected by a metal wire 210. One end of the metal wire 210 is connected to the electrode 2125, and the other end is connected to the transparent conductive layer 215, and the current is entered by the third semiconductor layer 2141. The second light emitting layer 214 is discharged from the electrode 2145, and the negative electrode of the DC power source DC1 is connected to the electrode 2145 of the second light emitting layer 214, thereby energizing the first light emitting layer 212 and the second light emitting layer 214 in series. Glowing. The second light emitting layer 214 may actually connect a plurality of first light emitting layers 212 in series, and the plurality of first light emitting layers 212 may be connected in series by using the metal wires 210, and the first light emitting layer 212 located at the end of the entire series circuit. It is connected to the DC power supply DC1.

Referring to FIG. 3B, the light-emitting element 200 of the first embodiment of the present invention may have a first light-emitting layer 212 and a second light-emitting layer 214, and the two light-emitting layers are combined with an external DC power source DC2. In a parallel circuit, the electrode 2122 of the first light-emitting layer 212 is connected to the conductive joint structure 203 by a metal wire 210. The positive electrode of the DC power source DC2 is connected to the metal layer 213, and the current is transmitted through the carrier 202 and the conductive joint structure 203, and is shunted. The second light-emitting layer 212 is inserted into the first light-emitting layer 212 and the second light-emitting layer 141 is connected to the second light-emitting layer 214. The anode of the DC power source DC2 is connected to the electrode 2125 of the first light-emitting layer 212, and the second light-emitting layer. The electrode 2145 of the stack 214 is used to sink the DC power source DC2 after the current is collected. It is conceivable that the second light-emitting layer 214 can be connected in series to form a first light-emitting layer 212 to form a series circuit, and then another set of first light-emitting layers 212. In combination with another circuit, a parallel circuit can be obtained by connecting the two circuits to the DC power source DC2.

Referring to FIG. 3C, the light-emitting element 200 of the first embodiment of the present invention may have a first light-emitting layer 212 and a second light-emitting layer 214, and the two light-emitting layers are combined with an external AC power source AC1. An anti-parallel circuit, the electrode 2125 of the first light-emitting layer 212, and the third semiconductor layer 2141 of the second light-emitting layer 214 are electrically connected through the metal wire 210 and the conductive bonding structure 203. One end of the AC power source AC1 is connected to the metal layer 213 to be connected to the third semiconductor layer 2141 of the second light emitting layer 214 and the electrode 2125 of the first light emitting layer 212 through the carrier 202 and the conductive bonding structure 203. One end is directly connected to the electrode 2122 of the first light emitting layer 212 and the electrode 2145 of the second light emitting layer 214. It can be considered that the second light-emitting layer 214 can be connected in series to form a first light-emitting layer 212 to form a series circuit, and then another series of first light-emitting layers 212 can be connected in series to form another circuit. Connecting the two circuits to the AC power source AC1 results in an anti-parallel circuit.

Referring to FIG. 3D, the light-emitting element 200 of the first embodiment of the present invention may have a plurality of first light-emitting layers 212 (212') and a plurality of second light-emitting layers 214 (214'), and most of the light-emitting layers are An AC power supply AC2 forms an electric circuit with a Wheatstone bridge.

The Wheatstone bridge circuit in FIG. 3D is composed of a plurality of first light-emitting stacks 212, 212', 212" and a plurality of second light-emitting stacks 214, 214', wherein the first circuit is located first. The electrodes 2125, 2125' of the light-emitting stacks 212 and 212' are respectively connected by a metal wire 210 to the electrode 2122" of the first light-emitting layer 212" of the longitudinal circuit, and are located in the longitudinal direction. The first light emitting layer 212" of the circuit connects the electrode 2125" to the conductive bonding structure 203 by the metal wire 210 to conduct the third semiconductor layer respectively disposed on the second light emitting layer 214, 214' of the peripheral circuit. 2141.

One end of the AC power source AC2 can be connected to the electrode 2122 of the first light emitting layer 212 and the electrode 2145 of the second light emitting layer 214; the other end of the AC power source AC2 can be connected to the electrode 2122 of the first light emitting layer 212' And on the electrode 2145' of the second light emitting laminate 214'. Therefore, the first light emitting layer 212, the first light emitting layer 212", and the second light emitting layer 214' constitute a first circuit in one direction; and the first light emitting layer 212', the first light emitting layer 212", And the second light emitting layer 214 constitutes one of the second circuits in the other direction. The first light-emitting layer 212 and the second light-emitting layer 214 ′ of the first circuit are not limited to a single light-emitting layer, and the first light-emitting layer 212 may be connected in series to form a first rectifier circuit, and the second light-emitting layer is formed. 214' may also connect a plurality of first light emitting stacks 212 to form a second rectifier circuit. The first light emitting layer 212' and the second light emitting layer 214 of the second circuit are not limited to only a single light emitting layer. The first light emitting layer 212' may be connected in series to form a third rectifier circuit. Layer 214 may also connect a plurality of first light emitting stacks 212' in series to form a fourth rectifier circuit.

Similarly, the number of the first light emitting stacks 212" located in the vertical circuit for sharing the first and second circuits may not be limited to only one, but a plurality of first light emitting layers 212" may be connected in series to form a main light emitting circuit. In order to enhance the overall brightness of the light-emitting element 200.

The series-parallel circuit configuration disclosed in FIGS. 3A to 3D is only a specific description of several common circuits which can be realized by the unique structure of the light-emitting element 200 of the present invention, and does not limit the shape of the light-emitting element 200 of the present invention. In general, those skilled in the art should also be able to utilize the spirit of the present invention to achieve the above-described circuits in a series-parallel connection different from that exemplified in the present embodiment.

Second embodiment

Referring to FIG. 4 , the light emitting device 400 includes a carrier 402 , a conductive bonding structure 404 formed on the carrier 402 , an epitaxial structure 406 over the conductive bonding structure 404 , an epitaxial structure 406 , and a conductive bonding structure 404 . The insulating portion 408 and the metal wire 410 disposed on the surface of the light emitting element 400. The metal wire 410 has a dielectric 411 between the surface of the epitaxial structure 406.

The epitaxial structure 406 can include one or more first light emitting stacks 412 and one or more second light emitting stacks 414 electrically conductive to the conductive bonding structures 404. The first light-emitting layer 412 and the second light-emitting layer 414 are equivalent to the light-emitting layer described in the first embodiment.

This embodiment is substantially the same as the first embodiment except that the conductive bonding structure 404 is a transparent conductive connection layer, and the carrier 402 is a transparent conductive substrate, thereby increasing the light-emitting area.

Third embodiment

Referring to FIG. 5, the light-emitting device 500 includes a carrier 502, a conductive bonding structure 504 formed on the carrier 502, an epitaxial structure 506 over the conductive bonding structure 504, at least one disposed on the epitaxial structure 506, and conductive bonding. An insulating portion 508 between the structures 504 and at least one metal wire 510 disposed on the surface of the light emitting element 500. The conductive bonding structure 504 includes a bonding layer 507, a reflective layer 505 formed on the bonding layer 507, and a transparent conductive layer 503 formed on the reflective layer 505. The metal wire 510 and the surface of the epitaxial structure 506 have a dielectric 511.

The epitaxial structure 506 can include a first luminescent stack 512 and 512', and a second luminescent stack 514, 514' electrically conductive to the conductive bonding structure 504.

This embodiment can be slightly modified from the first or second embodiment, and differs from the first and second embodiments mainly in that it includes a first light-emitting layer 512 (512') and a second light-emitting layer 514 (514'). The light-emitting stacks may each have a different epitaxial structure. In FIG. 5, the first light emitting layers 512 and 512' of the light emitting device 500 can be grown on different epitaxial substrates, so that the first semiconductor layer 5121 and the second side of the first light emitting layer 512 on both sides of the light emitting layer 5123. The semiconductor layer 5124 is respectively p-type and n-type; the first semiconductor layer 5121' and the second semiconductor layer 5124' on both sides of the light-emitting layer 5123' in the first light-emitting layer 512' are respectively n-type and p-type; and/or The second light emitting stacks 514 and 514' of the light emitting device 500 can be grown on different epitaxial substrates, so that the third semiconductor layer 5141 and the fourth semiconductor layer 5144 on both sides of the light emitting layer 5143 in the second light emitting layer 514 are respectively a p-type and an n-type; the third semiconductor layer 5141' and the fourth semiconductor layer 5144' on both sides of the light-emitting layer 5143' in the second light-emitting layer 514' are respectively n-type and p-type; and/or the first light-emitting layer 512 And the second light emitting layer 514 is respectively grown on different epitaxial substrates. For example, the first semiconductor layer 5121 and the third semiconductor layer 5141 have different polarities respectively, but the polarities between the first semiconductor layers 5121 and 5121' may be the same. .

Fourth embodiment

Referring to FIG. 6 , the light-emitting device 600 includes a carrier 601 as an insulating substrate, a conductive bonding structure 602 formed on the carrier 601 , an epitaxial structure 606 formed on the conductive bonding structure 602 , and an epitaxial structure 606 . The insulating portion 608 between the conductive bonding structure 602 and the metal wire 610 disposed on the surface of the light emitting device 600, wherein the metal wire 610 and the surface of the epitaxial structure 606 have a dielectric 611; the conductive bonding structure 602 includes A bonding layer 604 on the carrier 601, a reflective layer 605 formed on the bonding layer, and a transparent conductive layer 603 formed on the reflective layer.

The first light emitting stack 612 and the second light emitting layer 614 of the epitaxial structure 606 can be identical to the structures in the foregoing embodiments.

The difference between the present embodiment and the foregoing embodiment is that the carrier 601 is an insulating substrate, and only the uppermost transparent conductive layer 603 of the conductive bonding structure 602 has electrical conductivity. A solder pad 618 may be disposed on the surface of the transparent conductive layer 603 to be connected to an external power source (not shown) by wire bonding. The carrier 601 can be a silicone, glass, quartz, ceramic, alloy or printed circuit board (PCB). The transparent conductive layer 603 may be at least one of the group consisting of indium tin oxide, cadmium tin oxide, antimony tin oxide, zinc oxide, and zinc tin oxide. The reflective layer 605 may be selected from the group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, At least one of a group of materials composed of PbSn and AuZn or other alternative materials.

The examples of the invention are intended to be illustrative only and not to limit the scope of the invention. Any changes or modifications of the present invention to those skilled in the art will be made without departing from the spirit and scope of the invention.

10‧‧‧Sapphire insulating substrate

12‧‧‧Lighting laminate

123‧‧‧n type semiconductor layer

122‧‧‧Lighting layer

121‧‧‧p-type semiconductor layer

14‧‧‧ Ditch

18‧‧‧First electrode

16‧‧‧second electrode

19‧‧‧Metal wire

208, 408, 508, 608‧‧‧Insulation

212, 212', 212", 412, 512, 512', 612‧‧‧ first light-emitting laminate

2122, 2122', 2122" ‧ ‧ electrodes

2123, 2143, 5123, 5123', 5143, 5143'‧‧‧ luminescent layer

2145, 2145', 5145, 5145' ‧ ‧ electrodes

215, 603, 503‧‧ ‧ transparent conductive layer

204, 604, 507‧‧‧ joint layer

2121‧‧‧First semiconductor layer

2124‧‧‧Second semiconductor layer

2141‧‧‧ Third semiconductor layer

2144‧‧‧ fourth semiconductor layer

2126, 2146‧‧‧current diffusion layer

200, 400, 500, 600‧‧‧Lighting elements

202, 402, 502, 601‧‧‧ carriers

203, 404, 504, 602‧‧‧ conductive joint structure

206, 406, 506, 606‧‧‧ epitaxial structure

210, 410, 510, 610‧‧‧Metal wires

214, 214', 414, 514, 514', 614‧‧‧ second light-emitting laminate

2125, 2125', 2125" ‧ ‧ electrodes

213‧‧‧metal layer

217, 605, 505‧ ‧ reflective layer

211, 411, 511, 611‧‧‧ dielectric

618‧‧‧ solder pad

DC1, DC2‧‧‧ DC power supply

AC1, AC2‧‧‧ AC power supply

1 is a schematic view showing a light-emitting element having an array type light-emitting layer in one of the prior art; FIG. 2 is a schematic view showing a first embodiment of the light-emitting element of the present invention; and FIGS. 3A to 3D are respectively showing the application of the present invention FIG. 4 is a schematic view showing a second embodiment of a light-emitting element of the present invention; FIG. 5 is a view showing a third embodiment of the light-emitting element of the present invention; and a sixth embodiment; The figure shows a schematic view of a fourth embodiment of the light-emitting element of the present invention.

200‧‧‧Lighting elements

215‧‧‧Transparent conductive layer

202‧‧‧Vector

210‧‧‧Metal wire

203‧‧‧Electrical joint structure

214‧‧‧Second light-emitting laminate

206‧‧‧ epitaxial structure

2125‧‧‧electrode

208‧‧‧Insulation

213‧‧‧metal layer

212‧‧‧First light-emitting laminate

217‧‧‧reflective layer

2121‧‧‧First semiconductor layer

2122‧‧‧electrode

2123, 2143‧‧‧Lighting layer

2145‧‧‧electrode

2124‧‧‧Second semiconductor layer

2141‧‧‧ Third semiconductor layer

2126, 2146‧‧‧current diffusion layer

211‧‧‧ dielectric

204‧‧‧Connection layer

Claims (13)

A light-emitting element comprising: a carrier; a conductive bonding structure formed on the carrier; an epitaxial structure on the conductive bonding structure, comprising: at least one first light-emitting layer, comprising a first semiconductor layer And a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer respectively have an electrode on the surface; and at least one second light emitting layer comprises a third semiconductor layer, wherein the bottom surface is electrically connected to the conductive joint The structure and the fourth semiconductor layer have an electrode on the surface thereof; and at least one insulating portion is disposed between the first light emitting layer and the conductive bonding structure to insulate each of the first light emitting layers from the conductive bonding structure. The illuminating element of claim 1, wherein the conductive bonding structure comprises a transparent conductive connecting layer, the insulating layer is embedded in the transparent conductive connecting layer, and the carrier is a transparent conductive substrate. The light-emitting element of claim 1, wherein the carrier is an insulating substrate, and a surface of the conductive bonding structure is provided with a solder pad, or the carrier is a conductive semiconductor substrate having a metal layer at the bottom thereof. or The carrier is a metal substrate. The light-emitting element of claim 3, wherein the conductive joint structure comprises a conductive bonding layer formed on the carrier, a reflective layer formed on the bonding layer, and a transparent conductive layer formed on Between the reflective layer and the epitaxial structure, the insulating portion is embedded in the transparent conductive layer. The illuminating device of claim 1, wherein the first semiconductor layer is located at the bottom of the first luminescent laminate and has the same polarity as the third semiconductor layer; the second semiconductor layer is located at the first semiconductor Above the layer and having the same polarity as the fourth semiconductor layer; wherein the first semiconductor layer and the second semiconductor layer, and the third semiconductor layer and the fourth semiconductor layer respectively have a light-emitting layer. The light-emitting device of claim 1, wherein each of the first semiconductor layer and the third semiconductor layer is a p-type semiconductor layer, and each of the second semiconductor layer and the fourth semiconductor layer is an n-type semiconductor layer Or each of the first semiconductor layer and the third semiconductor layer is an n-type semiconductor layer, and each of the second semiconductor layer and the fourth semiconductor layer is a p-type semiconductor layer. The light-emitting device of claim 1, wherein the first light-emitting layer comprises a first light-emitting layer of the p-type and the n-type, respectively, wherein the first semiconductor layer and the second semiconductor layer are respectively And the first semiconductor layer and the first The second semiconductor layers are respectively n-type and p-type first light-emitting layers; and/or the second light-emitting layers include the third semiconductor layer and the fourth semiconductor layer respectively being p-type and n-type a second light emitting layer, and the third semiconductor layer and the fourth semiconductor layer are respectively n-type and p-type second light-emitting layers; and/or the first semiconductor layer is a bottom semiconductor layer of the first light-emitting layer And the polarity of the first light emitting layer is different from the third light emitting layer. The light-emitting device of claim 1, wherein at least one metal wire is disposed on the surface of the light-emitting device, and the first light-emitting layer and the second light-emitting layer are electrically conductively transmitted through the conductive joint structure. a layer, wherein the metal wire is directly connected between the first light emitting layer and the second light emitting layer; or the metal wire is directly connected to the two first light emitting layers; or the metal wire is directly connected to the two A second luminescent stack. The light-emitting element of claim 8, wherein the epitaxial structure comprises a series circuit or a parallel circuit by the metal wire and an external DC power source, and wherein the second light-emitting layer is transparent to the light-emitting layer The conductive bonding structure and the metal wire are electrically connected to the first light emitting laminate. The light-emitting element of claim 8, wherein the epitaxial structure comprises a plurality of the second light-emitting stacks and the plurality of first light-emitting stacks, wherein the first light-emitting stacks are formed by the metal wires The layers are connected into a plurality of sets of series circuits, and the series circuits are respectively connected to the second by the metal wires The light-emitting stack is connected, and then combined with an external DC power source to form a parallel circuit. The light-emitting element of claim 8, wherein the epitaxial structure forms an anti-parallel circuit by the metal wire and an external AC power source, wherein the second light-emitting layer transmits the conductive The bonding structure and the metal wire are electrically connected to the first light emitting laminate. The illuminating device of claim 8, wherein the epitaxial structure and the metal wire form a Wheatstone bridge circuit and is connected to an external AC power source, the Wheatstone bridge circuit comprising: a first circuit comprising: a first rectifying circuit in series with the first illuminating stack, a main illuminating circuit in series with the first illuminating stack, and a second rectifying circuit having the second illuminating stack; And a second circuit comprising: a third rectifier circuit in series with the first light emitting layer, the main light emitting circuit, and a fourth rectifier circuit having the second light emitting layer, wherein the main light emitting circuit and the first A rectifying circuit and the third rectifying circuit are electrically connected through the metal wire, and the main illuminating circuit and the second rectifying circuit and the fourth rectifying circuit are electrically connected through the metal wire and the conductive joint structure . The light-emitting element according to claim 12, wherein the second rectifier circuit and the fourth rectifier circuit are respectively connected in series with the plurality of first light-emitting laminates.