CN101515595A - Package mounting light emitting device - Google Patents
Package mounting light emitting device Download PDFInfo
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- CN101515595A CN101515595A CN 200910126802 CN200910126802A CN101515595A CN 101515595 A CN101515595 A CN 101515595A CN 200910126802 CN200910126802 CN 200910126802 CN 200910126802 A CN200910126802 A CN 200910126802A CN 101515595 A CN101515595 A CN 101515595A
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- light
- emitting device
- substrate
- semiconductor layer
- type semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Abstract
The present invention provides a package for mounting a light emitting device, which includes a lead frame with metal lead wires and the light emitting device mounted on the lead frame. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.
Description
In this please be international filing date be on October 25th, 2005, national applications number be 200580042802.8, denomination of invention divides an application for the patent application of " having the light-emitting device of a plurality of luminescence units and the encapsulation that described light-emitting device is installed ".
Technical field
The present invention relates to a kind of light-emitting device with a plurality of luminescence units and a kind of above the encapsulation of described light-emitting device is installed, and more particularly, relate to a kind of light-emitting device with a plurality of luminescence units, wherein said a plurality of luminescence unit forms serial array and can use AC power supplies directly to drive on single substrate, and relates to the encapsulation that described light-emitting device is installed above a kind of.
Background technology
Light-emitting diode is a kind of el light emitting device with following structure: the p N-type semiconductor N that n N-type semiconductor N that main charge carrier is an electronics and main charge carrier are the hole combines, and launches predetermined light by reconfiguring these electronics and hole.This type of light-emitting diode is used as display unit and backlight, and its application expanded to and use it for general lighting, replaces conventional incandescent bulb and fluorescent lamp simultaneously.
Compare with conventional light bulb or fluorescent lamp, light-emitting diode consumes less electric power and has than the long life.The power consumption of light-emitting diode is less than one 1/tens or several percent of the power consumption of conventional lighting device, and its useful life be several times or tens times, thereby have the power consumption of reduction and splendid durability.
For using this type of light-emitting diode to throw light on, must will be dispersed into the outside from the heat that light-emitting device produces effectively.Therefore, increase day by day for the concern that can will be dispersed into outside flip-chip (flip-chip) type light-emitting device effectively from the heat that light-emitting device produces.
Fig. 1 is the sectional view of the conventional flip chip type light-emitting device 20 of explanation.
Referring to Fig. 1, first and second electrodes 12 and 14 are formed on the target substrate 10 (for example, Submount substrate (submount substrate) or lead frame), and scolder is formed on these electrodes.Then, light-emitting device 20 is bonded on the described substrate 10.At this moment, the p type semiconductor layer of light-emitting device 20 and n type semiconductor layer join scolder separately to.After this, there is the substrate 10 of light-emitting device 20 to seal to top joint.
Use the light-emitting device of closing line (bonding wire) to compare with other, this type of conventional flip chip type light-emitting device has higher radiating efficiency, and owing to existing a little light shielding to improve optical efficiency.In addition, the advantage of flip chip type light-emitting device is to make its encapsulation compact, because they do not use closing line.
Yet,, thereby exist the described light-emitting device can easily impaired problem because this based light emitting device switched on and off repeatedly according to the phase place of AC power supplies.Therefore, be difficult to realize described light-emitting device is used for the general lighting purpose by light-emitting device being directly connected to the family expenses AC power supplies.
Summary of the invention
Technical problem
A purpose of the present invention is to provide a kind of light-emitting device, and it can drive by being directly connected to AC power supplies.
Another object of the present invention is to provide a kind of light-emitting device, wherein can reduce the heat load on the described light-emitting device and can improve luminous efficiency.
A further object of the present invention is to provide a kind of encapsulation, described light-emitting device is installed above the described encapsulation and can drives by being directly connected to AC power supplies.
Another purpose of the present invention is to provide a kind of light-emitting device, wherein can prevent from described light-emitting device is installed in the process complications of Submount or lead frame.
Technical solution
For realizing these purposes of the present invention, the invention provides a kind of light-emitting device with a plurality of luminescence units and a kind of above the encapsulation of described light-emitting device is installed.Encapsulation according to an aspect of the present invention comprises lead frame with metal lead wire and the light-emitting device that is installed on the lead frame, described light-emitting device comprises: a plurality of luminescence units, be formed on first substrate, each luminescence unit in described a plurality of luminescence unit has p type semiconductor layer, active layer and n type semiconductor layer, wherein, p type semiconductor layer is constructed to below active layer; Second substrate, wherein, p electrode and n electrode are constructed between second substrate and described luminescence unit, being exposed with respect to described luminescence unit to small part of p electrode or n electrode, wherein, described a plurality of luminescence unit is electrically connected mutually, thereby uses AC power supplies directly to drive described light-emitting device.
Light-emitting device according to an aspect of the present invention comprises a plurality of luminescence units, described a plurality of luminescence units together be arranged on the substrate and its each have n type semiconductor layer and be positioned at p type semiconductor layer on the part of described n type semiconductor layer.Described a plurality of luminescence unit joins the Submount substrate to.Wherein said a plurality of luminescence unit is electrically connected to each other, and uses AC power supplies directly to drive described light-emitting device.Therefore, owing to can easily distribute the heat that produces from luminescence unit, thereby can reduce the heat load on the light-emitting device.
In certain embodiments of the present invention, described Submount substrate can comprise a plurality of electrode layers that are spaced apart from each other.Described a plurality of luminescence unit can join electrode layer to.At this moment, electrode layer can be electrically connected the n type semiconductor layer and the p type semiconductor layer of two adjacent luminescence units in described a plurality of luminescence unit.Therefore, electrode layer can be connected in series described a plurality of luminescence units and be the series connection array of light emitting cells.Can form at least two the series connection array of light emitting cells, and they each other the mode of reverse parallel connection connect, thereby provide a kind of can be by the direct driven light emitting device of the AC energy.
Conventional flip-chip light emitting device 20 means a kind of luminescence chip that wherein is formed with a light-emitting diode.Yet light-emitting device of the present invention has a plurality of light-emitting diodes on single substrate.Therefore, term " luminescence unit " means each in the described a plurality of light-emitting diodes that are formed on the single substrate.In addition, term " series connection array of light emitting cells " means the structure that wherein a plurality of luminescence units are connected in series.On the single substrate two series connection array of light emitting cells can be through connecting with by the indivedual current drives that flow in the opposite direction.Therefore, described light-emitting device can be directly connected to AC power supplies and not use AC-DC transducer or similar device, so that described light-emitting device can be used for general lighting.
Simultaneously, described light-emitting device can further comprise the N type metal coupling (metal bumper) on each that is formed on described n type semiconductor layer and be formed on P type metal coupling on each of described p type semiconductor layer.Described a plurality of luminescence unit joins electrode layer to by described N type and P type metal coupling.Therefore, described a plurality of luminescence units are electrically connected to electrode layer by metal coupling, and simultaneously, heat can easily be dispersed into the Submount substrate by metal coupling.
The Submount substrate can have a plurality of recessed portions and bossing, and n type semiconductor layer and p type semiconductor layer can join bossing and recessed portion respectively to.Recessed portion and bossing can be defined as N district and P district respectively.At this moment, each in the described electrode layer is formed on P district and N district top to be connected P district and N district.
In an embodiment of the present invention, the Submount substrate can comprise P type joint sheet that is formed on one edge and the N type joint sheet that is formed on its another edge.
Simultaneously, in described a plurality of luminescence units, the p type semiconductor layer of luminescence unit that is positioned at the described edge of substrate can be electrically connected to P type joint sheet, and the n type semiconductor layer of luminescence unit that is positioned at described another edge of substrate can be electrically connected to N type joint sheet.
P type semiconductor layer and P type joint sheet can be electrically connected to each other by P type metal coupling, and n type semiconductor layer and N type joint sheet can be electrically connected to each other by N type metal coupling.
A plurality of connection electrode can connect the n type semiconductor layer and the p type semiconductor layer of the adjacent luminescence unit between the luminescence unit of the described edge of substrate and the luminescence unit in described another edge of substrate, thereby form the series connection array of light emitting cells on described substrate.Simultaneously, each in described a plurality of luminescence unit can comprise the resilient coating that is formed on the substrate.N type semiconductor layer can be formed on the described resilient coating, and active layer (active layer) can be positioned on the part of described n type semiconductor layer.In addition, p type semiconductor layer can be positioned on the described active layer.In addition, the first metal layer can be formed on the p type semiconductor layer, and second metal level can be formed on the described the first metal layer.The first metal layer can be a transparency electrode, and second metal level can be a reflectance coating.
Light-emitting device according to a further aspect of the invention comprises a plurality of luminescence units that together are arranged on the substrate.In described a plurality of luminescence unit each has n type semiconductor layer and is positioned at p type semiconductor layer on the part of described n type semiconductor layer.Simultaneously, N type metal coupling is formed on the n type semiconductor layer of a luminescence unit in described a plurality of luminescence unit, and P type metal coupling is formed on the p type semiconductor layer of another luminescence unit in described a plurality of luminescence unit.Light-emitting device is installed on lead frame or the Submount substrate by N type metal coupling and P type metal coupling.A plurality of connection electrode are formed on the substrate and are electrically connected the n type semiconductor layer and the p type semiconductor layer of adjacent luminescence unit, forming the series connection array of light emitting cells on substrate, and an above-mentioned luminescence unit and above-mentioned another luminescence unit are positioned at the place, two ends of series connection array of light emitting cells.Wherein a plurality of luminescence units are electrically connected to each other, and use AC power supplies directly to drive described light-emitting device.
In certain embodiments of the present invention, except that described N type metal coupling, can be in described a plurality of luminescence units form other N type metal coupling on the n type semiconductor layer of the luminescence unit except that an above-mentioned luminescence unit, and except that described P type metal coupling, can be in described a plurality of luminescence units form other P type metal coupling on the p type semiconductor layer of the luminescence unit except that above-mentioned another luminescence unit.Can be by on the Submount substrate, forming electrode layer and being electrically connected described N type and P type metal coupling forms the series connection array of light emitting cells via described electrode layer.
On the contrary, can come on substrate, to form the series connection array of light emitting cells by n type semiconductor layer and the p type semiconductor layer that is electrically connected adjacent luminescence unit with a plurality of connection electrode.At this moment, an above-mentioned luminescence unit and above-mentioned another luminescence unit can be positioned at the place, two ends of described series connection array of light emitting cells.In addition, the top surface that is formed on the top surface of the N type metal coupling on the n type semiconductor layer of a described luminescence unit and is formed on the P type metal coupling on the p type semiconductor layer of described another luminescence unit can flush with the top surface of connection electrode at least.That is to say that the top surface of connection electrode can be positioned at the top surface below of N type and P type metal coupling or be positioned at the identical level place of top surface with N type and P type metal coupling.If the top surface of connection electrode is positioned at the top surface below of metal coupling, can prevent the short circuit between connection electrode and Submount substrate or the lead frame so.If the top surface of connection electrode is positioned at the level place identical with the top surface of joint sheet, the top surface of connection electrode can directly contact with Submount substrate or lead frame so, thereby promotes that heat distributes.
Another aspect of the present invention provides a kind of Submount substrate that is used for installing a plurality of luminescence units in the above.Above comprising, described Submount substrate defines the substrate in a plurality of N district and P district.A plurality of electrode layers are positioned on the described substrate, and are spaced apart from each other simultaneously.Described electrode layer connects adjacent N district and P district.At this moment, dielectric film can be positioned under described a plurality of electrode layer.
Simultaneously, substrate can have recessed portion and bossing, and can respectively described bossing and the female partly be defined as N district and P district.
The encapsulation of the light-emitting device with a plurality of luminescence units above providing, is installed another aspect of the present invention.Described encapsulation comprises the lead frame with metal lead wire.Light-emitting device is positioned on the described lead frame.Described light-emitting device comprises a plurality of luminescence units that together are arranged on the substrate.In described a plurality of luminescence unit each has n type semiconductor layer and is positioned at p type semiconductor layer on the part of described n type semiconductor layer.A plurality of connection electrode are formed on the described substrate and are electrically connected the n type semiconductor layer and the p type semiconductor layer of adjacent luminescence unit, thereby form the series connection array of light emitting cells on substrate.In addition, metal coupling can be positioned at the place, two ends of described series connection array of light emitting cells.Described metal coupling can be electrically connected to described metal lead wire.Wherein said a plurality of luminescence unit is electrically connected to each other, and uses AC power supplies directly to drive described light-emitting device.Therefore,, also can simplify joint, be connected to metal lead wire because be positioned at the metal coupling at place, series connection array of light emitting cells two ends even there are a plurality of luminescence units.Compare with the common process that the flip chip type light-emitting device is installed, can prevent the process complications of mounting light emitting device.
In addition, can between lead frame and light-emitting device, insert the Submount substrate.Described Submount substrate can have the joint sheet corresponding to metal coupling on its top surface.Described joint sheet can be electrically connected to metal lead wire.
Joint sheet can be electrically connected to metal lead wire by closing line, or is directly connected to metal lead wire by the circuit that is formed on the Submount substrate.
Simultaneously, the connection electrode of light-emitting device can contact with the top surface of Submount substrate.At this moment, can distribute the heat that produces from light-emitting device, thereby promote that heat distributes by the Submount substrate.On the contrary, connection electrode can be spaced apart with the top surface of Submount substrate.Therefore, can prevent short circuit between connection electrode and the metal lead wire easily.
The light-emitting device that provides according to a further aspect of the present invention comprises: a plurality of luminescence units, be formed on the substrate and from described substrate separation, each in the described luminescence unit has n type semiconductor layer and is positioned at p type semiconductor layer on the part of described n type semiconductor layer; And the Submount substrate, engaging above it has described a plurality of luminescence unit, and wherein said a plurality of luminescence units are electrically connected to each other, and use AC power supplies directly to drive described light-emitting device.
Aforementioned Submount substrate comprises a plurality of electrode layers that are spaced apart from each other, described a plurality of luminescence unit joins described electrode layer to, and in the described electrode layer each is electrically connected the n type semiconductor layer and the p type semiconductor layer of two adjacent luminescence units in described a plurality of luminescence unit.
Aforesaid light-emitting device, it comprises further and is formed in the described n type semiconductor layer N type metal coupling on each and is formed in the described p type semiconductor layer P type metal coupling on each that wherein said a plurality of luminescence units join described electrode layer to by described N type and P type metal coupling.
In certain embodiments of the present invention, aforementioned Submount substrate has a plurality of recessed portions and bossing, and described n type semiconductor layer and described p type semiconductor layer join described bossing and the female part respectively to.
Advantageous effects
According to the present invention, a kind of light-emitting diode is provided, it can drive via being directly connected to AC power supplies by the series connection array of light emitting cells that employing has a plurality of luminescence units that are connected in series.Owing to made up flip chip type light-emitting device, thereby can easily distribute the heat that produces from luminescence unit, thereby reduced the heat load on the light-emitting device and improve luminous efficiency equally with a plurality of luminescence units that are connected in series.Simultaneously, may provide a kind of by mounting light emitting device in the above and via being directly connected to the encapsulation that AC power supplies drives.In addition,, also can simplify the technology that described a plurality of luminescence units is installed in Submount substrate or lead frame, because by using the connection electrode described a plurality of luminescence unit that is connected in series even adopt a plurality of luminescence units.
Description of drawings
Fig. 1 is the sectional view of the conventional flip chip type light-emitting device of explanation.
Fig. 2 is the circuit diagram of explanation according to the operating principle of the light-emitting device with a plurality of luminescence units of the embodiment of the invention.
Fig. 3 and 4 is explanation sectional views according to the light unit blocks of the flip chip type light-emitting device of the embodiment of the invention.
Fig. 5 is the sectional view of explanation according to the flip chip type Submount substrate of the embodiment of the invention.
Fig. 6 is the sectional view that the light-emitting device of Fig. 4 light unit blocks on Fig. 5 Submount substrate be installed of explanation according to the embodiment of the invention.
Fig. 7 illustrates the sectional view that the light-emitting device of a plurality of luminescence units is installed according to another embodiment of the present invention on the Submount substrate.
Fig. 8 is the sectional view that the light-emitting device of light unit blocks on Submount substrate be installed of explanation according to further embodiment of this invention.
Fig. 9 and 10 is sectional views that light-emitting device according to yet another embodiment of the invention is described.
Figure 11 to 13 is sectional views of encapsulation that the light-emitting device of Figure 10 is installed above the explanation.
Embodiment
Hereinafter will describe the embodiment of the invention in detail referring to accompanying drawing.Following examples only are provided for purpose of explanation, make the those skilled in the art can understand spirit of the present invention fully.Therefore, the invention is not restricted to following examples, but can other form implement.In graphic, for convenience of description for the purpose of, can exaggerate width, length and the thickness etc. of element.Specification and graphic in, same reference numerals is indicated similar elements all the time.
Fig. 2 is the circuit diagram of explanation according to the operating principle of the light-emitting device with a plurality of luminescence units of the embodiment of the invention.
Referring to Fig. 2, first serial array 31 forms by be connected in series luminescence unit 31a, 31b and 31c, and second serial array 33 forms by be connected in series other luminescence unit 33a, 33b and 33c.
Described first and second serial array 31 and 33 each two ends are connected to AC power supplies 35 and ground connection respectively.First and second serial array are connected in parallel between AC power supplies 35 and the ground connection.That is to say that the two ends of first serial array all are electrically connected to the two ends of second serial array.
Simultaneously, first and second serial array 31 and 33 through arranging so that its luminescence unit by the current drives that flows in the opposite direction.In other words, as shown in the figure, be included in the anode and the negative electrode of the luminescence unit in first serial array 31 and be included in the anode of the luminescence unit in second array 33 and negative electrode is arranged in the opposite direction.
Therefore, if AC power supplies 35 is in positive, it is next luminous to connect the luminescence unit that is included in first serial array 31 so, and disconnects the luminescence unit that is included in second serial array 33.On the contrary, if AC power supplies 35 is in negative, disconnect the luminescence unit that is included in first serial array 31 so, and connect the luminescence unit that is included in second serial array 33.
Therefore, alternately switch on and off first and second serial array 31 and 33, make that the light-emitting device that comprises first and second serial array is luminous continuously by AC power supplies.
Though each comprises that the luminescence chip of single light-emitting diode can be connected to each other to drive (as the circuit of Fig. 2) by AC power supplies, has increased the shared space of luminescence chip.Yet, in light-emitting device of the present invention, can drive single chip by being connected to AC power supplies, thereby prevent increase by the light-emitting device occupation space.
Simultaneously, though circuit shown in Figure 2 is configured to make each the two ends in first and second serial array to be connected respectively to AC power supplies 35 and ground connection, circuit can be configured to make that its two ends are connected to two terminals of AC power supplies.In addition, though each in first and second serial array comprises three luminescence units, this is for the illustrative example of better understanding purpose, and can increase the number of luminescence unit where necessary.Also can increase the number of serial array.
Simultaneously, can between AC power supplies and serial array, arrange bridge rectifier (bridge rectifier), to provide by the AC power supplies driven light emitting device.At this moment, can use luminescence unit to dispose described bridge rectifier.By adopting this type of bridge rectifier, the light-emitting device that only has a serial array may be provided, described light-emitting device can be driven by AC power supplies.
Fig. 3 and 4 is explanation sectional views according to the light unit blocks 1000 of the flip chip type light-emitting device of the embodiment of the invention, and Fig. 5 is the sectional view of explanation according to the flip chip type Submount substrate 2000 of the embodiment of the invention.
Referring to Fig. 3 and 4, light unit blocks 1000 has a plurality of luminescence units on Sapphire Substrate of being arranged in 110.In the described luminescence unit each comprises the resilient coating 120 that is formed on the substrate 110, be formed on n type semiconductor layer 130 on the described resilient coating 120, be formed on the active layer 140 on the part of described n type semiconductor layer 130 and be formed on p type semiconductor layer 150 on the described active layer 140.In addition, on described p type semiconductor layer 150, form the first metal layer 160.Simultaneously, on the first metal layer 160, be formed for the P type metal coupling 170 of bump bond (bumping), and on n type semiconductor layer 130, be formed for the N type metal coupling 180 of bump bond.Equally, can on the first metal layer 160 and n type semiconductor layer 130, form second metal level (not shown) with 10% to 100% reflectivity.In addition, can on p type semiconductor layer 150, be formed for the extra ohmic metal layer of steady supply of current.
Though can use gallium nitride (GaN) film that is doped with N type impurity as n type semiconductor layer 130, it is not limited to this, and can use various semiconductor material layers.In this embodiment, n type semiconductor layer 130 can form and comprise N type Al
xGa
1-xN (0≤x≤1) film.In addition, can use be doped with p type impurity gallium nitride film as p type semiconductor layer 150.In this embodiment, p type semiconductor layer 150 comprises P type Al through forming
xGa
1-xN (0≤x≤1) film.Simultaneously, the InGaN film can be used as semiconductor layer.In addition, each formed multilayer film of n type semiconductor layer 130 and p type semiconductor layer 150.Si is as N type impurity, and Zn and Mg are used separately as InGaAlP and based on the p type impurity of the compound of nitride.
In addition, at N type Al
xGa
1-xThe multilayer film that is concatenated to form quantum well layer (quantum welllayer) and barrier layer (barrier layer) on N (0≤x≤1) film is as active layer 140.Stop that trap layer (barrierwell layer) and quantum well layer can be by for example binary compound, for example In of GaN, InN or AlN
xGa
1-xN (0≤x≤1) or Al
xGa
1-xThe ternary compound of N (0≤x≤1) or Al for example
xIn
xGa
1-x-yThe quaternary compound of N (0≤x+y≤1) is made.Described binary can be doped with N type or p type impurity to quaternary compound.
Preferably, ELD is as the first metal layer 160.In this embodiment, use ITO.Reflectance coating with conductivity is as second metal level.N type and P type metal coupling 170 and 180 can be made by among Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag, Ni and the Ti at least one.
The method of making the light unit blocks 1000 with aforementioned structure hereinafter will briefly be described.
On substrate 110, form resilient coating 120, n type semiconductor layer 130, active layer 140 and p type semiconductor layer 150 successively.
Form these material layers by various depositions and growing method, described method comprises metal organic chemical vapor deposition (metal organic chemical vapor deposition, MOCVD), molecular beam epitaxy (molecular beam epitaxy, MBE), hydride gas-phase epitaxy (hydride vapor phaseepitaxy, HVPE) etc.
Part removes P type semiconductor 150, active layer 140, n type semiconductor layer 130 and resilient coating 120, to separate described luminescence unit.For this purpose, on p type semiconductor layer 150, form predetermined mask pattern (not shown), and pass through mask pattern and exposed portions in etching P type semiconductor 150, active layer 140, n type semiconductor layer 130 and the resilient coating 120, so that described a plurality of luminescence unit electrically separates each other.
Then, partly remove P type semiconductor 150 and active layer 140, to expose the part of n type semiconductor layer 130 by predetermined etch process.For instance, be formed for exposing the etching mask pattern of the part of p type semiconductor layer 150 in the above, and then remove the expose portion of p type semiconductor layer 150 and active layer 140, so that can partly expose n type semiconductor layer 130 by dry type or wet etch process.At this moment, can partly remove the top of n type semiconductor layer 130 simultaneously.
After this, on p type semiconductor layer 150, form the first metal layer 160.Described the first metal layer 160 can use stripping technology (lift-off process) to form.That is to say, on total, apply photoresist, and then use predetermined mask to be formed for exposing the first photoresist pattern (not shown) of p type semiconductor layer 150 by photoetching and developing process.Subsequently, on total, form the first metal layer 160, and then remove the first photoresist pattern.As a result, remove another part the part on being positioned at p type semiconductor layer 150 in the metal level 160, so that the first metal layer 160 is retained on the p type semiconductor layer 150.
On the first metal layer 160, form P type metal coupling 170, and on n type semiconductor layer 130, form N type metal coupling 180.For this purpose, on total, apply photoresist, and then use predetermined mask to be formed for exposing the second photoresist pattern of the part of the part of the first metal layer 160 and n type semiconductor layer 130 by photoetching and developing process.Then, depositing metal layers on total, and then remove the part on the expose portion that is formed on the first metal layer 160 in the metal level and be formed on the part and the second photoresist pattern the part on the expose portion of n type semiconductor layer 130.As a result, on the first metal layer 160, form P type metal coupling 170, and on n type semiconductor layer 130, form N type metal coupling 180.
The technology that making according to the present invention is used for the light unit blocks of flip chip type light-emitting device is not limited to preceding method, but can further add various modifications and material membrane to it.That is to say, on p type semiconductor layer, form after the first metal layer, can carry out the etch process that separates luminescence unit.In addition, after exposing n type semiconductor layer, the part in the expose portion of removable n type semiconductor layer and the resilient coating below the part of n type semiconductor layer is to separate described luminescence unit.In addition, can on the first metal layer, further form by film formed second metal level of metallic reflection.
Fig. 5 is the sectional view of explanation according to the Submount substrate 2000 that is used for the flip chip type light-emitting device of the embodiment of the invention.
Referring to Fig. 5, described Submount substrate 2000 comprises: substrate 200 defines a plurality of N district B and P district A above it; Dielectric film 210, it is formed on the substrate 200; With a plurality of electrode layers 230, its each adjacent N district B and P district A are connected to each other singlely.The Submount substrate further comprises the P type joint sheet 240 that extends to P district A of an edge that is positioned at substrate and the N type joint sheet 250 that extends to N district B that is positioned at its another edge.
N district B refers to the district that N type metal coupling 180 is connected in the light unit blocks 1000, and P district A refers to the district that P type metal coupling 170 is connected in the light unit blocks 1000.
At this moment, various materials with thermal conductivity can be used for substrate 200, and for instance, can use SiC, Si, Ge, SiGe, AlN, metal and analog.Have under the conductive situation at substrate 200, dielectric film 210 makes electrode 230 and joint sheet 240 and 250 and substrate 200 electric insulations.Dielectric film 210 can form multilayer film.Dielectric film 210 can be by (for example) SiO
2, among MgO and the SiN at least one make.
The method of making Submount substrate 2000 hereinafter will be described.
On substrate 200, form recessed portion and bossing, to define N district B and P district A in the above.Can come width, height and the shape of N district B and P district A are carried out various modifications according to the size of N type metal coupling 180 and P type metal coupling 170.In this embodiment, the bossing of substrate 200 becomes N district B, and the recessed portion of substrate 200 becomes P district A.Substrate 200 with this type of shape can use molding technique or make by etch process.That is to say, on substrate 200, be formed for exposing the mask of P district A, and then the expose portion of etch substrate 200 forms the P district A of depression.Then, remove described mask, so that form the P district A and relative outstanding N district B of depression.Perhaps, can form the P district A of depression by means of machining.
Then, go up formation dielectric film 210 in total (that is the substrate 200 that, has recessed portion and bossing).At this moment, not under the situation about making at substrate 200 by conductive material, can not form dielectric film 210.In this embodiment, the metal material with good electric conductivity is as substrate 200, to improve thermal conductivity.Therefore, dielectric film 210 is through forming to serve as abundant insulator.
Next, form electrode layer 230 on dielectric film 210, each of described electrode layer 230 connects adjacent N district B and P district A in pairs.Can or use the gas-phase deposition of predetermined mask pattern to form electrode layer 230 by screen painting (screen printing) method.
After this, aforementioned light unit blocks 1000 joins Submount substrate 2000 to, makes to make to obtain light-emitting device.
Fig. 6 is explanation is equipped with the light-emitting device of light unit blocks 1000 on Submount substrate 2000 a sectional view.
Referring to Fig. 6, the P type of light unit blocks 1000 and N type metal coupling 170 and 180 join the N district B and the P district A of Submount substrate 2000 to, and the N type metal coupling 180 of two adjacent luminescence units and P type metal coupling 170 are connected to each other by the electrode layer 230 of Submount substrate 200, as shown in the figure.The P type metal coupling 170 that is positioned at an edge of light unit blocks 1000 is connected to the P type joint sheet 240 of Submount substrate 2000, and the N type metal coupling 180 that is positioned at another edge of light unit blocks 1000 is connected to the N type joint sheet 250 of Submount substrate 2000.
At this moment, metal coupling 170 and 180, electrode layer 230 and joint sheet 240 and 250 can engage by various joint methods, and described method is for example used the eutectic method of eutectic temperature (eutectic temperature).As a result, described a plurality of luminescence units join the top of Submount substrate 2000 to, make to form the array of light emitting cells that is connected in series.
At this moment, can come the number of the luminescence unit that is connected in series is carried out various modifications according to the power consumption of power supply to be used and luminescence unit.
Preferably, the light unit blocks 1000 that is formed with 10 to 1,000 luminescence units above joins Submount substrate 2000 to, to make the light-emitting device that luminescence unit is connected in series by substrate 2000.More preferably, the light unit blocks 1000 that is formed with 15 to 50 luminescence units above joins Submount substrate 2000 to, to make the light-emitting device that luminescence unit is connected in series by substrate 2000.For instance, when being driven by the 220V AC power supplies, may be produced on the flip chip type light-emitting device of 66 or 67 unit luminescence units that have 3.3V under the specific drive current, described unit luminescence unit joins Submount substrate 2000 to.In addition, when being driven by the 110V AC power supplies, may be produced on the light-emitting device of 33 or 34 unit luminescence units that have 3.3V under the specific drive current, the luminescence unit series connection of described unit is incorporated into Submount substrate 2000.
Joint method of the present invention is not limited to this, and can form various embodiment.
For instance, the light unit blocks 1000 that replaces wherein said a plurality of luminescence units shown in Figure 6 to connect by substrate 110, indivedual luminescence unit 100a, 100b and 100c can be positioned on the Submount substrate 2000, and are spaced apart from each other simultaneously, as shown in Figure 7.At this moment, adjacent luminescence unit 100a is electrically connected to each other by the electrode layer 230 that is formed on the Submount substrate 2000 to N type metal coupling 170 and the P type metal coupling 180 of 100c.
By in the light unit blocks 1000 of Fig. 6, substrate 110 and a plurality of luminescence units being separated to come luminescence unit 100a, 100b and the 100c of construction drawing 7.Can use laser or grinding technics that substrate 110 is separated with luminescence unit.
Perhaps, as shown in Figure 8, can be by forming electrode layer 230 (described electrode layer 230 is connected adjacent N district B and P district A in pairs) on the flat substrate 200 that defines a plurality of N district B and P district A in the above to form Submount substrate 2000 and make light-emitting device on Submount substrate 2000 by light unit blocks is installed.That is to say that (for example, recessed portion and bossing electrode layer 230 that formation is spaced apart from each other on) the substrate 200, and the N type metal coupling 180 of adjacent luminescence unit and P type metal coupling 170 are electrically connected to each other not form specific pattern in the above.At this moment, N type metal coupling 180 and P type metal coupling 170 join electrode layer 230 at the par place, as shown in the figure.
Simultaneously, replace on luminescence unit, forming P type and N type metal coupling 170 and 180, can on N district B on the Submount substrate 2000 and P district A, form metal coupling 170 and 180.At this moment, can on N type and p type semiconductor layer 130 and 150, further form special metal electrode (not shown), so that join metal coupling 170 and 180 to.
In embodiments of the present invention, can be connected to form luminescence unit on substrate 110, to form at least two series connection array of light emitting cells by electrode layer 230.Described at least two series connection array of light emitting cells can be driven by the family expenses AC power supplies, and reverse parallel connection connection each other simultaneously.On the contrary, can in light-emitting device, dispose extra bridgt circuit.Described bridgt circuit can use luminescence unit and electrode layer to dispose.
In the aforementioned embodiment, the electrode layer of Submount substrate 2000 is electrically connected to each other described a plurality of luminescence units, to form the series connection array of light emitting cells.Yet owing to described a plurality of luminescence units should be aimed at the electrode layer of Submount substrate 2000, thereby to join described a plurality of luminescence units to Submount substrate 2000 in the present embodiment may be complicated.
Hereinafter the light-emitting device that can prevent from a plurality of luminescence units are joined to the process complications of Submount substrate or lead frame according to another embodiment of the present invention will be described.
Fig. 9 is the sectional view that light-emitting device 50 according to yet another embodiment of the invention is described.
Referring to Fig. 9, described light-emitting device 50 comprises substrate 51 and a plurality of luminescence units that are formed on the described substrate.Consideration will form the lattice coefficient of superincumbent semiconductor layer and select described substrate 51.For instance, under the situation of formation based on the semiconductor layer of GaN on the substrate 51, substrate 51 can be Sapphire Substrate.
In the described luminescence unit each comprises n type semiconductor layer 55, active layer 57 and p type semiconductor layer 59.Described active layer 57 is positioned on the part of described N type semiconductor 55, and described p type semiconductor layer 59 is positioned on the described active layer 57.Therefore, the part of the top surface of n type semiconductor layer is covered by active layer 57 and p type semiconductor layer 59, and the remainder of the top surface of n type semiconductor layer is exposed.Simultaneously, metal level 61 can be positioned on the p type semiconductor layer 59, and another metal level 63 can be positioned on another part of n type semiconductor layer 55.Metal level 61 and 63 and P type and n type semiconductor layer form ohmic contact, to reduce junction resistance.At this moment, though another metal level 63 can be by making with the metal material identical materials that is included in the metal level, it is not limited to this.In addition, if do not need to be used to form the metal level of extra ohmic contact, will remove metal level 63 so.
Simultaneously, can between n type semiconductor layer 55 and substrate 51, insert resilient coating 53.Described resilient coating 53 is used to reduce because the stress that the difference between the lattice coefficient of substrate 51 and n type semiconductor layer 55 causes.As resilient coating, can use semiconductor layer based on GaN.
Though n type semiconductor layer 55 can be (for example, the N type Al of the film based on GaN that is doped with N type impurity
xGa
1-xN (0≤x≤1) film), but it is not limited to this, and can be formed by various semiconductor layers.In addition, though p type semiconductor layer 59 can be (for example, the P type Al of the film based on GaN that is doped with p type impurity
xGa
1-xN (0≤x≤1) film), but it is not limited to this, and can be formed by various semiconductor layers.N type and p type semiconductor layer can be In
xGa
1-xN (0≤x≤1) film, and form multilayer film.Simultaneously, Si can be used as N type impurity, and Mg can be used as p type impurity.If semiconductor layer is not GaN based on GaP, Zn can be used as p type impurity so.
In addition, metal level 61 can comprise first and second metal levels of lamination up and down.Described the first metal layer and described second metal level can be respectively transparent electrode layer and reflector.Optical efficiency is improved by light being reflected back into substrate 51 in the reflector, described light from active layer emission and then transmission pass transparent electrode layer.Transparent electrode layer can be indium tin oxide target (ITO) film, and described reflector can be that reflectivity is 10% to 100% metal level.
Can be by on substrate 51, forming resilient coating, n type semiconductor layer, active layer and p type semiconductor layer successively and forming described luminescence unit by using photoetching and etch process to come that they are carried out etching.At this moment, can form material layer by various depositions and growing method, described method is metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) and hydride gas-phase epitaxy (HVPE) for example.Before carrying out photoetching and etch process, can further on p type semiconductor layer, form metal level.
Use photoetching and etch process with luminescence unit separated from one another after, can form other metal level 63.Can and use photoetching and etch process to come the described metal level of patterning to form described other metal level by depositing metal layers on the luminescence unit that separates.
Simultaneously, the n type semiconductor layer of adjacent luminescence unit and p type semiconductor layer are by connection electrode 65 electrical connections separately.Luminescence unit is connected in series by connection electrode 65, to form the series connection array of light emitting cells.As describing, can on substrate 51, form at least two series connection luminescence units referring to Fig. 2.Described at least two series connection array of light emitting cells are through arranging with by the current drives that flows in the opposite direction.
In forming under the situation of metal level 61 and 63 metal level 61 on the connection electrode 65 connection p type semiconductor layers and the metal level 63 on the n type semiconductor layer on N type and p type semiconductor layer 55 and 59.Connection electrode 65 can air-bridge (airbridge) or the ladder form that covers (step-cover) connect metal level.Can use vapor deposited metal, plating or chemical plating (electroless plating) to form connection electrode 65.
Simultaneously, metal coupling 67a and 67b are positioned at the place, two ends of series connection array of light emitting cells.Metal coupling 67a and 67b are carrying out the metal coupling of bump bond effect after a while during mounting light emitting device 50 on Submount substrate or lead frame.
The thickness of metal coupling 67a can be 0.01 to 1000, and the top surface of metal coupling 67a and 67b is positioned at the level place higher than the level of connection electrode 65.
Simultaneously, metal coupling can be formed on place, series connection array of light emitting cells two ends, but is not limited to this.Metal coupling can be formed on the two ends place of a serial array, and each the two ends in other serial array can be electrically connected to described metal coupling.
Light-emitting device 50 according to the embodiment of the invention can be operated by being directly connected to AC power supplies.Because luminescence unit is connected to each other by connection electrode 65, thereby can be by with metal coupling 67a with 67b joins the Submount substrate to or lead frame comes operating light-emitting device 50.Therefore, even there is described a plurality of luminescence unit, also may prevent the process complications of mounting light emitting device 50.
Figure 10 is the sectional view that light-emitting device 70 according to yet another embodiment of the invention is described.
Referring to Figure 10, light-emitting device 70 comprises the identical assembly of assembly with the light-emitting device of describing referring to Fig. 9 50.Hereinafter parts different with those parts of light-emitting device 50 in the light-emitting device 70 will only be described.
The light-emitting device 70 of this embodiment has the connection electrode 75 that is positioned at the level place identical with the top surface of metal coupling 67a and 67b.Therefore, can use the technology identical to form metal coupling 67a and 67b with the technology that forms connection electrode 75.In addition, owing to contact electrode also contacts with the top of Submount substrate or lead frame, thereby compare with the light-emitting device 50 of Fig. 9, light-emitting device 70 can improve heat and distribute.
Figure 11 to 13 is sectional views that the encapsulation with light-emitting device 70 according to other embodiments of the present invention is described.Figure 11 is the sectional view that explanation light-emitting device 70 is installed in the encapsulation on the lead frame, and Figure 12 and 13 is sectional views that explanation light-emitting device 70 is installed in the encapsulation on the Submount substrate.
Referring to Figure 11, encapsulation 3000 comprises the lead frame with metal lead wire 101a and 101b.It is package main body 103 through inserted mode system that described lead frame can comprise metal lead wire wherein.In addition, lead frame can be a printed circuit board (PCB).
Light-emitting device 70 is installed on the lead frame and then is electrically connected to metal lead wire 101a and 101b.At this moment, the metal coupling 67a of light-emitting device 70 and 67b join metal lead wire 101a and 101b respectively to.As a result, the series connection array of light emitting cells of light-emitting device 70 is electrically connected to metal lead wire 101a and 101b.Simultaneously, connection electrode 75 contacts with the top surface physics of lead frame, and simultaneously spaced apart with metal lead wire.Therefore, the heat that produces from light-emitting device 70 can easily be dispersed into lead frame by connection electrode 75.
Simultaneously, encapsulation 3000 can further comprise fin (heat sink) 107 under package main body 103.Fin 107 promotes distributing from the heat of light-emitting device 70 emissions.
According to this embodiment, providing a kind of can have the light-emitting device 70 of a plurality of luminescence units via being directly connected to the encapsulation 3000 that AC power supplies drives by installation.In addition, because connection electrode 75 contacts with the top surface physics of lead frame, thereby can promote distributing from the heat of light-emitting device 70 generations.
Simultaneously, replace light-emitting device 70, but the light-emitting device 50 of installation diagram 9.At this moment, owing to compare with 67b with metal coupling 67a, the connection electrode 65 of light-emitting device 50 has lower height, thereby they do not contact with the top surface formation physics of lead frame.Therefore, can prevent short circuit between connection electrode 65 and metal lead wire 101a and the 101b easily.
Referring to Figure 12, dispose encapsulation 4000 according to this embodiment by add Submount substrates 201 and closing line 203a and 203b to the encapsulation of describing referring to Figure 11 3000.Submount substrate 201 is inserted between light-emitting device 70 and the lead frame top surface.
Preferably, the substrate of Submount substrate is made by the material with thermal conductivity.By SiC, Si, germanium (Ge), SiGe (silicone germanium, SiGe), the substrate made of aluminium nitride (AlN), metal or analog can be used as described substrate.Simultaneously, can on the substrate top surface, form dielectric layer.Described dielectric layer makes joint sheet 201a and 201b and connection electrode 75 and insulated substrate.Simultaneously, if substrate is made by insulating material, can remove dielectric layer so.
Described joint sheet 201a and 201b and described metal lead wire 101a and 101b are electrically connected by closing line.
As described in referring to Figure 11, replace light-emitting device 70, but the light-emitting device 50 of installation diagram 9.
Referring to Figure 13, have in the mode identical according to the encapsulation 5000 of this embodiment and to be inserted in Submount substrate 301 between light-emitting device 70 and the lead frame with encapsulation illustrated in fig. 12.Yet Submount substrate 301 is that with the difference of the Submount substrate 201 of Figure 12 it has joint sheet 301a and the 301b that penetrated the Submount substrate.Therefore, because joint sheet directly joins metal lead wire 101a and 101b to, thereby can remove the closing line of Figure 12.
In addition, replace light-emitting device 70, the light-emitting device 50 of Fig. 9 can be installed on the Submount substrate 301.
Claims (5)
1, a kind of encapsulation, described encapsulation comprises:
Lead frame has metal lead wire;
Light-emitting device is installed on the lead frame, and described light-emitting device comprises:
A plurality of luminescence units are formed on first substrate, and each luminescence unit in described a plurality of luminescence units has p type semiconductor layer, active layer and n type semiconductor layer, and wherein, p type semiconductor layer is constructed to below active layer;
Second substrate,
Wherein, p electrode and n electrode are constructed between second substrate and described luminescence unit, being exposed with respect to described luminescence unit to small part of p electrode or n electrode,
Wherein, described a plurality of luminescence units are electrically connected mutually, thereby use AC power supplies directly to drive described light-emitting device.
2, encapsulation according to claim 1, wherein, the p electrode is an electric conducting material, and comprises reflector and knitting layer.
3, encapsulation according to claim 2, wherein, the n electrode is an electric conducting material, and comprises knitting layer and articulamentum, described articulamentum is connected to the p electrode.
4, encapsulation according to claim 1, wherein, first substrate and light-emitting device are separated.
5, encapsulation according to claim 1, described encapsulation also comprise the line that connects the lead frame and second substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040105368 | 2004-12-14 | ||
| KR1020040105368A KR101106148B1 (en) | 2004-12-14 | 2004-12-14 | Luminous device |
| KR1020050008309 | 2005-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200580042802 Division CN100487932C (en) | 2004-12-14 | 2005-10-25 | Light emitting device with multiple light emitting units and package for mounting the same light emitting device |
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| CN101515595A true CN101515595A (en) | 2009-08-26 |
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| CN 200580042802 Active CN100487932C (en) | 2004-12-14 | 2005-10-25 | Light emitting device with multiple light emitting units and package for mounting the same light emitting device |
| CN 200910126802 Pending CN101515595A (en) | 2004-12-14 | 2005-10-25 | Package mounting light emitting device |
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| KR100787171B1 (en) * | 2007-01-02 | 2007-12-21 | (주)에피플러스 | Light emitting diode |
| KR101017394B1 (en) * | 2008-09-30 | 2011-02-28 | 서울옵토디바이스주식회사 | Light emitting device and method of fabricating the same |
| CN104103634A (en) * | 2009-04-07 | 2014-10-15 | 宁波璨圆光电有限公司 | Alternating-current type flip-chip light-emitting diode structure |
| WO2010149027A1 (en) | 2009-06-22 | 2010-12-29 | Industrial Technology Research Institute | Light-emitting unit array, method for fabricating the same and projection apparatus |
| KR100986570B1 (en) * | 2009-08-31 | 2010-10-07 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| JP2011199221A (en) * | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | Light emitting diode |
| DE102010013494A1 (en) | 2010-03-31 | 2011-10-06 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| CN102222857B (en) * | 2010-04-14 | 2013-05-22 | 海特光电有限责任公司 | Narrow-pulse-width low-duty-cycle laser diode array structure |
| KR101144351B1 (en) * | 2010-09-30 | 2012-05-11 | 서울옵토디바이스주식회사 | wafer level LED package and fabrication method thereof |
| CN104091815A (en) * | 2010-10-12 | 2014-10-08 | 晶元光电股份有限公司 | Light-emitting component |
| KR20120091839A (en) * | 2011-02-10 | 2012-08-20 | 삼성전자주식회사 | Flip chip light emitting device package and manufaturing method thereof |
| TWI484672B (en) * | 2011-08-29 | 2015-05-11 | Genesis Photonics Inc | Light emitting diode structure and fabricating method thereof |
| CN102299228A (en) * | 2011-09-23 | 2011-12-28 | 厦门市三安光电科技有限公司 | Flip-chip plug-in type light-emitting diode chip structure and manufacturing method thereof |
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| CN102927481B (en) * | 2011-11-25 | 2013-11-20 | 俞国宏 | High-power LED lamp |
| CN104112815B (en) * | 2013-04-18 | 2017-04-12 | 亿光电子工业股份有限公司 | Light-emitting diode device and manufacturing method thereof |
| CN103579478B (en) * | 2013-11-08 | 2016-05-18 | 中国科学院半导体研究所 | Make the method for upside-down mounting integrated LED chip level light source module |
| CN103887378B (en) * | 2014-03-28 | 2017-05-24 | 西安神光皓瑞光电科技有限公司 | Method for epitaxial growth of ultraviolet LED with high luminous efficacy |
| JP6277875B2 (en) * | 2014-06-12 | 2018-02-14 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
| KR102032158B1 (en) * | 2014-12-19 | 2019-10-15 | 글로 에이비 | Light emitting diode array on a backplane and method of making thereof |
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| US6885035B2 (en) * | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
| US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
| KR100958054B1 (en) * | 2003-03-08 | 2010-05-13 | 삼성전자주식회사 | Submount of semiconductor laser diode, manufacturing method thereof and semiconductor laser diode assembly adopting the same |
| US20040206970A1 (en) * | 2003-04-16 | 2004-10-21 | Martin Paul S. | Alternating current light emitting device |
-
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| KR101106148B1 (en) | 2012-01-20 |
| CN101076900A (en) | 2007-11-21 |
| CN100487932C (en) | 2009-05-13 |
| KR20060066870A (en) | 2006-06-19 |
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