CN104103634A - Alternating-current type flip-chip light-emitting diode structure - Google Patents
Alternating-current type flip-chip light-emitting diode structure Download PDFInfo
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- CN104103634A CN104103634A CN201410322015.XA CN201410322015A CN104103634A CN 104103634 A CN104103634 A CN 104103634A CN 201410322015 A CN201410322015 A CN 201410322015A CN 104103634 A CN104103634 A CN 104103634A
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- light
- emitting diode
- diode
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- backlight unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention discloses an alternating-current type flip-chip light-emitting diode structure. A plurality of diodes are arranged at intervals on a substrate; a plurality of flip-chip light-emitting diodes are arranged on the diodes; and therefore, the area of the substrate can be fully utilized by the flip-chip light-emitting diodes on the substrate, and the light-emitting area of the substrate is equal to the area of the substrate, and thus, light-emitting efficiency can be improved.
Description
The present invention is the divisional application of No. 200910057038.1 patent applications of original applying number, and the applying date of this original application is: on April 7th, 2009, denomination of invention is: AC type flip-chip light-emitting diode structure and manufacture method thereof.
Technical field
The present invention, about a kind of alternating current light-emitting diode structure, especially refers to a kind of AC type flip-chip light-emitting diode structure.
Background technology
The fast development of opto-electronics, light-emitting diode (the Light Emitting Diode of one of light source; LED) owing to thering is the feature of power saving, be widely used in a large number the field in various illuminations or light requirement source, in photoelectric field, occupy very important status, just because of this, countries in the world manufacturer there's no one who doesn't or isn't drops into ample resources in the exploitation of correlation technique, 2005 hold Seoul, South Korea semiconductor and the product presentations of American I II-N Technology the development trend of alternating current light-emitting diode (AC LED) product has more been described, alternating current light-emitting diode product has become the developing trend of global manufacturer.
From the technical development of alternating current light-emitting diode so far, the early stage alternating current light-emitting diode of bridge-type alternating current light-emitting diode Structure Improvement, solve its cannot be in the time that alternating current positive-negative half-cycle signal be inputted all can luminous (full-time luminous) problem, the design concept that it mainly utilizes Wheatstone bridge (Wheatstone Bridge), is improved the luminescence phenomenon of the every alternating current that in a flash only have sum 1/2 of alternating current light-emitting diode in the time that alternating current positive-negative half-cycle signal is inputted.
But, rectifier stack in bridge-type alternating current light-emitting diode structure directly uses alternating current light-emitting diode, cause it to there are two major defects, one, because single rectifier stack (single alternating current luminescent microcrystal grain) reverse bias holding capacity is not good, therefore the quantity of the rectifier stack using cannot reduce, that is, must be series on an arm of Wheatstone bridge by many alternating current luminescent microcrystal grains, just can bear the reverse bias being applied by alternating current, with civil power 110V, the reverse bias peak value being applied by alternating current signal is about 156V (110 × √ 2), therefore, the alternating current luminescent microcrystal grain in alternating current signal plus or minus path that half-wave is flowed through needs approximately 20 altogether, partially contrary on average to bear, avoid by the contrary risk partially puncturing, therefore, rectifier stack sum approximately needs 20 × 2=40 (alternating current signal just and the alternating current light-emitting diode in path that negative half-wave is flowed through), being used to luminous alternating current light-emitting diode quantity is constrained to 110V/3.1V (actuation voltage of every alternating current light-emitting diode)-20 (in order to the alternating current light-emitting diode quantity of rectification)=15, hence one can see that, the quantity that can produce the alternating current light-emitting diode that is used to rectification is much larger than the situation that is used to luminous alternating current light-emitting diode three quantity, and the energy that both consume due to rectification and luminescence component (alternating current light-emitting diode) is identical, therefore the ratio that can make input power be wasted in rectifier stack remains high, and the not good situation of generation whole efficiency, its two, though compared to the design of early stage alternating current light-emitting diode, its light-emitting area is existing to be increased, but still has rectifier stack quite a lot due to the contrary waste that can luminously not cause Integral luminous area partially time.
Moreover, refer to a kind of AC light-emitting body and AC illuminator that TaiWan, China patent application is applied for for No. TWI297200, espespecially a kind of utilization has AC light-emitting body and the AC illuminator that the rectifier stack of high reverse-breakdown voltage and low forward cut-in voltage characteristic carries out rectification, refer to shown in Fig. 1, the light-emitting area of the entire area on substrate is also not equal to substrate area, due to the design of this patent, cause on substrate and must have a fixed area so that rectification circuit to be set, therefore, cause light-emitting area to dwindle.
In sum, the use that is designed primarily to light source of alternating current light-emitting diode, how improving its luminous efficiency is a major subjects, and the use of alternating current light-emitting diode is comparatively extensive in the family use of the mankind, is the problem of a maximum therefore address the above problem real.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of AC type flip-chip light-emitting diode structure, and this structure makes the light-emitting area on light emitting diode base plate equal substrate area, has improved luminous efficiency.
For solving the problems of the technologies described above, the invention provides a kind of AC type flip-chip light-emitting diode structure, comprising:
Substrate, is separated by described substrate the first diode, the second diode, the 3rd diode, the 4th diode is set;
The first light-emitting diode chip for backlight unit, is electrically connected and is arranged at least partly on described the first diode and described the second diode; And
The second light-emitting diode chip for backlight unit, be electrically connected, and described the second light-emitting diode chip for backlight unit is electrically connected and is arranged at least partly on described the 3rd diode and described the 4th diode with described the first light-emitting diode chip for backlight unit;
Wherein, described the first diode, the second diode, the 3rd diode and the 4th diode form at least a portion of rectification circuit, make described flip-chip light-emitting diode structure be applicable to alternating current environment.
A kind of AC type flip-chip light-emitting diode structure provided by the invention, on substrate, be embedded a plurality of diodes using the use as rectification, and a plurality of crystal-coated light-emitting diodes are set on this diode, the area of described substrate can be used completely by crystal-coated light-emitting diodes thereon, make light-emitting area on substrate equal the area of this substrate, to improve luminous efficiency.
Brief description of the drawings
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is the AC(AC system of known technology) structural representation of light-emitting diode;
Fig. 2 is the structural representation of a preferred embodiment of the present invention;
Fig. 3 is the structural representation of another preferred embodiment of the present invention;
Fig. 4 A is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 2;
Fig. 4 B is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 2;
Fig. 4 C is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 2;
Fig. 4 D is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 2;
Fig. 4 E is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 2;
Fig. 5 is the structural representation of a preferred embodiment more of the present invention;
Fig. 6 A is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 5;
Fig. 6 B is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 5;
Fig. 6 C is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 5;
Fig. 6 D is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 5;
Fig. 6 E is the manufacturing process schematic diagram of light-emitting diode shown in Fig. 5;
Description of reference numerals in figure:
10 is that substrate 12 is the first groove
14 is that the second groove 16 is the 3rd groove
18 is that the 4th groove 20 is the first light-emitting diode chip for backlight unit
22 is that the first electrode 24 is the second electrode
26 is that transparency carrier 30 is the second light-emitting diode chip for backlight unit
32 is that third electrode 34 is the 4th electrode
36 is that transparency carrier 38 is semiconductor epitaxial layer
39 is that the second semiconductor epitaxial layer 40 is the first projection
50 is that the second projection 60 is the 3rd projection
70 is that the 4th projection 80 is the first insulating part
85 is that the second insulating part 90 is contact
92 is that insulating barrier 94 is separate layer
96 is that assembled plate 98 is for sharing substrate
100 is that the first diode 102 is P type semiconductor
104 is that N type semiconductor 200 is the second diode
202 is that P type semiconductor 204 is N type semiconductor
300 is that the 3rd diode 302 is P type semiconductor
304 is that N type semiconductor 400 is the 4th diode
402 is that P type semiconductor 404 is N type semiconductor
D1 is that distance B 2 is that distance B 3 is separated space.
Embodiment
For making your auditor have further understanding and understanding to technical characterictic of the present invention and effect of reaching, only coordinate and be described in detail as follows with preferred embodiment and accompanying drawing:
Must vacate area so that rectification circuit to be set for solving when known technology arranges light-emitting diode on substrate, cannot use the area of this substrate completely, reduce its light-emitting area, the present invention addresses the above problem so that the area of substrate can design completely.
First, refer to Fig. 2, it is the structural representation of one of the present invention preferred embodiment; As shown in Figure 2, the present invention is a kind of AC type flip-chip light-emitting diode structure, and described AC type flip-chip light-emitting diode structure comprises substrate 10, the first light-emitting diode chip for backlight unit 20, the second light-emitting diode chip for backlight unit 30, the first diode 100, the second diode 200, the 3rd diode 300 and the 4th diode 400.The first diode 100, the second diode 200, the 3rd diode 300, the 4th diode 400 are arranged on this substrate 10, the first light-emitting diode chip for backlight unit 20 is electrically connected and part be arranged at the first diode 100 and, on the second diode 200, the second light-emitting diode chip for backlight unit 30 is electrically connected and part is arranged on the 3rd diode 300 and the 4th diode 400, and the first light-emitting diode chip for backlight unit 20 and the second light-emitting diode chip for backlight unit 30 electric property couplings.Wherein, the first diode 100, the second diode 200, the 3rd diode 300 and the 4th diode 400 form at least a portion of described rectification circuit, make the present invention's flip-chip light-emitting diode structure can be used in alternating current environment.
Substrate 10 further has multiple grooves of establishing of being separated by be embedded the first diode 100, the second diode 200, the 3rd diode 300 and the 4th diode 400.The first light-emitting diode chip for backlight unit 20 comprises that the first electrode 22, the second electrode 24, the second electrodes 24 connect the first diode 100, the second diode 200 by the first projection 40; Wherein, between the first diode 100 and the second diode 200, there is certain distance D1.The present invention further comprises the first insulating part 80, and it is located on substrate 10, and is arranged between the first diode 100 and the second diode 200.
Further, the first diode 100 comprises P type semiconductor 102, N type semiconductor 104, the second diode 200 comprises that P type semiconductor 202, N type semiconductor 204, the first projections 40 connect the N type semiconductor 104 of the first diode 100 and the N type semiconductor 204 of the second diode 200.
Again, the first electrode 22 is connected with contact 90 by the second projection 50, and wherein, contact 90 is arranged on substrate 10, and between contact 90 and substrate 10, be further provided with insulating barrier 92, described insulating barrier 92 is arranged between described the second diode 200 and described the 3rd diode 300.The second light-emitting diode chip for backlight unit 30 comprises that third electrode 32, one the 4th electrode 34, the four electrodes 34 are connected with contact 90 by the 3rd projection 60, and third electrode 32 connects the 3rd diode 300, the 4th diode 400 by the 4th projection 70; Wherein, between the 3rd diode 300, the 4th diode 400, there is certain distance D2.The present invention further comprises the second insulating part 85, and it is located on substrate 10, and is arranged between the 3rd diode 300, the 4th diode 400.
Moreover, the 3rd diode 300 comprises P type semiconductor 302, N type semiconductor 304, the 4th diode 400 comprises that P type semiconductor 402, N type semiconductor 404, the four projections 70 connect the P type semiconductor 302 of the 3rd diode 300 and the P type semiconductor 402 of the 4th diode 400.
Again, the first light-emitting diode chip for backlight unit 20, the second light-emitting diode chip for backlight unit 30 are located on substrate 10 in the die bond mode of crystal covering type, the first light-emitting diode chip for backlight unit 20, the second light-emitting diode chip for backlight unit 30 comprise respectively semiconductor epitaxial layer 38, the second semiconductor epitaxial layer 39, and the first light-emitting diode chip for backlight unit 20, the second light-emitting diode chip for backlight unit 30 comprise respectively transparency carrier 26,36, and the surface coarsening degree of transparency carrier 26,36 is between 0.5nm and 10um.
Referring to Fig. 3, is the structural representation of another preferred embodiment of the present invention; As shown in Figure 3, another embodiment of the present invention and a upper embodiment difference are to have a separated space D3 between the first light-emitting diode chip for backlight unit 20 and the second light-emitting diode chip for backlight unit 30, and separated space D3 is provided with separate layer 94.
Referring to Fig. 4 A to Fig. 4 E, is the manufacturing flow chart of preferred embodiment of the present invention; As shown in Fig. 4 A to Fig. 4 E, and consult Fig. 2 simultaneously, the manufacture method of AC type flip-chip light-emitting diode of the present invention, its step comprises: substrate 10 is provided, and etching the first groove 12, the second groove 14, the 3rd groove 16, the 4th groove 18 of being separated by, and form insulating barrier 92 on substrate 10, and contact 90 is set on insulating barrier 92, see Fig. 4 A; Group is established the first diode 100, the second diode 200, the 3rd diode 300, the 4th diode 400 in the first groove 12, the second groove 14, the 3rd groove 16, the 4th groove 18 respectively, sees Fig. 4 B; Assembled plate 96 is provided, and the first light-emitting diode chip for backlight unit 20 is set in assembled plate 96 in assembled plate 96 with respect to the position of the first groove 12, the second groove 14, and, the second light-emitting diode chip for backlight unit 30 being set in assembled plate 96 with respect to the position of the 3rd groove 16, the 4th groove 18, see Fig. 4 C; This assembled plate 96 of overturning also joins the first light-emitting diode chip for backlight unit 20 and the first diode 100, the second diode 200 by the first projection 40, by the second projection 50, the first light-emitting diode chip for backlight unit 20 is joined with contact 90, by the 3rd projection 60, the second light-emitting diode 30 is joined with contact 90, by the 4th projection 70, the second light-emitting diode 30 and the 3rd diode 300, the 4th diode 400 are joined, see Fig. 4 D; And self assembly plate 96 separates the first light-emitting diode chip for backlight unit 20, the second light-emitting diode chip for backlight unit 30, see Fig. 4 E.
Referring to Fig. 5, is the structural representation of another preferred embodiment of the present invention, as shown in Figure 5, this embodiment compared to the difference of above-described embodiment is: use one to share substrate 98, and adopt crystal type of heap of stone to form respectively semiconductor epitaxial layer 38 and the second semiconductor epitaxial layer 39, respectively in semiconductor epitaxial layer 38, on one second semiconductor epitaxial layer 39, form the first electrode 22, the second electrode 24, third electrode 32, the 4th electrode 34, again by semiconductor epitaxial layer 38, the second semiconductor epitaxial layer 39 carries out alligatoring processing procedure, semiconductor epitaxial layer 38, its surface coarsening degree of the second semiconductor epitaxial layer 39 is between 0.5nm and 10um.
Referring to Fig. 6 A to Fig. 6 E, is the manufacturing flow chart of another preferred embodiment of the present invention; As shown in Fig. 6 A to Fig. 6 E, and consult Fig. 5 simultaneously, the manufacture method of AC type flip-chip light-emitting diode of the present invention, its step comprises: substrate 10 is provided, and etching the first groove 12, the second groove 14, the 3rd groove 16, the 4th groove 18 of being separated by, and form insulating barrier 92 on substrate 10, and contact 90 is set on insulating barrier 92, see Fig. 6 A; Group is established the first diode 100, the second diode 200, the 3rd diode 300, the 4th diode 400 in the first groove 12, this second groove 14, the 3rd groove 16, the 4th groove 18 respectively, sees Fig. 6 B; Provide and share substrate 98, and sharing the position of heap of stone brilliant semiconductor epitaxial layer 38 that form first light-emitting diode chip for backlight unit 20 of substrate 98 with respect to the first groove 12, the second groove 14, and, at the second semiconductor epitaxial layer 39 that the second light-emitting diode chip for backlight unit 30 is set with respect to the position of the 3rd groove 16, the 4th groove 18, see Fig. 6 C; Substrate 98 is shared in upset, and by the first projection 40, the first light-emitting diode chip for backlight unit 20 and, the first diode 100, the second diode 200 are joined, by the second projection 50, the first light-emitting diode chip for backlight unit 20 is joined with contact 90, by the 3rd projection 60, the second light-emitting diode 30 is joined with contact 90, by the 4th projection 70, the second light-emitting diode 30 and the 3rd diode 300, the 4th diode 400 are joined, see Fig. 6 D; And certainly share substrate 98 separate the first light-emitting diode chip for backlight unit 20, the second light-emitting diode chip for backlight unit 30, see Fig. 6 E.
More than, by embodiment, the present invention is had been described in detail, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (16)
1. an AC type flip-chip light-emitting diode structure, is characterized in that, comprising:
Substrate, is separated by described substrate the first diode, the second diode, the 3rd diode and the 4th diode is set;
On described substrate, be also provided with the first light-emitting diode chip for backlight unit, described the first light-emitting diode chip for backlight unit is electrically connected and is arranged at least partly on described the first diode and described the second diode; And,
The second light-emitting diode chip for backlight unit, described the second light-emitting diode chip for backlight unit and described the first light-emitting diode chip for backlight unit electric property coupling, and described the second light-emitting diode chip for backlight unit is electrically connected and is arranged at least partly on described the 3rd diode and described the 4th diode;
Wherein, described the first diode, the second diode, the 3rd diode and the 4th diode form at least a portion of rectification circuit, make described flip-chip light-emitting diode structure be applicable to alternating current environment.
2. AC type flip-chip light-emitting diode structure as claimed in claim 1, is characterized in that, described substrate has multiple grooves of being separated by and arranging, to be embedded described the first diode, the second diode, the 3rd diode and the 4th diode.
3. AC type flip-chip light-emitting diode structure as claimed in claim 1, it is characterized in that, described flip-chip light-emitting diode structure also comprises a contact, and described contact is arranged on described substrate, is electrically connected respectively with described the first light-emitting diode chip for backlight unit, described the second light-emitting diode chip for backlight unit.
4. AC type flip-chip light-emitting diode structure as claimed in claim 1, is characterized in that, also has insulating barrier to be arranged on described substrate between described the second diode and described the 3rd diode.
5. AC type flip-chip light-emitting diode structure as claimed in claim 1, it is characterized in that, described the first diode and the each self-contained P type semiconductor of described the second diode and N type semiconductor, and described the first light-emitting diode chip for backlight unit is respectively coupled to the N type semiconductor of described the first diode, and the N type semiconductor of described the second diode.
6. AC type flip-chip light-emitting diode structure as claimed in claim 1, it is characterized in that, described the 3rd diode and the each self-contained P type semiconductor of described the 4th diode and N type semiconductor, and described the second light-emitting diode chip for backlight unit is respectively coupled to the P type semiconductor of described the 3rd diode, and the P type semiconductor of the 4th diode.
7. AC type flip-chip light-emitting diode structure as claimed in claim 1, it is characterized in that, on described the first light-emitting diode chip for backlight unit, the first projection is also set, described the first light-emitting diode chip for backlight unit is arranged on described the first diode, described the second diode by the first projection.
8. AC type flip-chip light-emitting diode structure as claimed in claim 7, is characterized in that, between described the first projection and described substrate, the first insulating part is also set, and described the first insulating part is arranged between described the first diode and described the second diode.
9. AC type flip-chip light-emitting diode structure as claimed in claim 1, it is characterized in that, the 4th projection is also set on described the second light-emitting diode chip for backlight unit, and described the second light-emitting diode chip for backlight unit is arranged on described the 3rd diode, described the 4th diode by described the 4th projection.
10. AC type flip-chip light-emitting diode structure as claimed in claim 9, is characterized in that, between described the 4th projection and described substrate, the second insulating part is also set, and described the second insulating part is arranged between described the 3rd diode and described the 4th diode.
11. AC type flip-chip light-emitting diode structures as claimed in claim 1, is characterized in that, between described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit, form a separated space.
12. AC type flip-chip light-emitting diode structures as claimed in claim 1, is characterized in that, between described the first light-emitting diode chip for backlight unit and described the second light-emitting diode chip for backlight unit, a separate layer are set.
13. AC type flip-chip light-emitting diode structures as claimed in claim 1, is characterized in that, described the first light-emitting diode chip for backlight unit and the second light-emitting diode chip for backlight unit comprise respectively semiconductor epitaxial layer.
14. AC type flip-chip light-emitting diode structures as claimed in claim 13, is characterized in that, described the first light-emitting diode chip for backlight unit, described the second light-emitting diode chip for backlight unit also comprise respectively: transparency carrier.
15. AC type flip-chip light-emitting diode structures as claimed in claim 13, is characterized in that, the surface coarsening degree of described semiconductor epitaxial layer is between 0.5nm and 10um.
16. AC type flip-chip light-emitting diode structures as claimed in claim 14, is characterized in that, the surface coarsening degree of described transparency carrier is between 0.5nm and 10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410322015.XA CN104103634A (en) | 2009-04-07 | 2009-04-07 | Alternating-current type flip-chip light-emitting diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410322015.XA CN104103634A (en) | 2009-04-07 | 2009-04-07 | Alternating-current type flip-chip light-emitting diode structure |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910057038.1A Division CN101859756B (en) | 2009-04-07 | 2009-04-07 | AC type flip-chip light-emitting diode structure and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104103634A true CN104103634A (en) | 2014-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410322015.XA Pending CN104103634A (en) | 2009-04-07 | 2009-04-07 | Alternating-current type flip-chip light-emitting diode structure |
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| CN2657203Y (en) * | 2003-09-01 | 2004-11-17 | 光鼎电子股份有限公司 | Luminous diode packaging device with rectification circuit |
| CN1681121A (en) * | 2004-04-09 | 2005-10-12 | 元砷光电科技股份有限公司 | Crystal coated sealing structure of light-emitting diodes |
| CN1983594A (en) * | 2005-12-15 | 2007-06-20 | 鼎元光电科技股份有限公司 | LED luminescent device combined with rectifying circuit on secondary carrier and its production |
| CN101076900A (en) * | 2004-12-14 | 2007-11-21 | 首尔Opto仪器股份有限公司 | Light emitting device with multiple light emitting units and package for mounting the same light emitting device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2657203Y (en) * | 2003-09-01 | 2004-11-17 | 光鼎电子股份有限公司 | Luminous diode packaging device with rectification circuit |
| CN1681121A (en) * | 2004-04-09 | 2005-10-12 | 元砷光电科技股份有限公司 | Crystal coated sealing structure of light-emitting diodes |
| CN101076900A (en) * | 2004-12-14 | 2007-11-21 | 首尔Opto仪器股份有限公司 | Light emitting device with multiple light emitting units and package for mounting the same light emitting device |
| CN1983594A (en) * | 2005-12-15 | 2007-06-20 | 鼎元光电科技股份有限公司 | LED luminescent device combined with rectifying circuit on secondary carrier and its production |
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Application publication date: 20141015 |