TW201438188A - Stacked LED array structure - Google Patents

Stacked LED array structure Download PDF

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Publication number
TW201438188A
TW201438188A TW102110508A TW102110508A TW201438188A TW 201438188 A TW201438188 A TW 201438188A TW 102110508 A TW102110508 A TW 102110508A TW 102110508 A TW102110508 A TW 102110508A TW 201438188 A TW201438188 A TW 201438188A
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Taiwan
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semiconductor layer
stacked
substrate
electrode
light
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TW102110508A
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Chinese (zh)
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Wen-Qin Cai
li-hong Lai
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Miracle Technology Co Ltd
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Priority to TW102110508A priority Critical patent/TW201438188A/en
Priority to CN201410087516.4A priority patent/CN103956372A/en
Priority to JP2014059921A priority patent/JP2014187366A/en
Priority to US14/222,819 priority patent/US20140284633A1/en
Publication of TW201438188A publication Critical patent/TW201438188A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The present invention provides a stacked LED array structure, which comprises a substrate and a plurality of LED dies sequentially stacked on the substrate. Each LED die comprises a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is configured with a first electrode and stacked with the second semiconductor layer. The second semiconductor layer is configured with a second electrode and stacked with the first semiconductor layer of another LED die. The second electrode of each LED die is connected with the first electrode of another LED die to cascade into a LED array. By stacking multiple LED dies as a LED array in a stacking manner, the present invention is not only easy to manufacture, but also can effectively reduce the overall configuration volume of LED array.

Description

堆疊式發光二極體陣列結構Stacked LED array structure

　　本發明有關於一種發光二極體陣列結構，尤指一種堆疊式之發光二極體陣列結構。
The invention relates to a light-emitting diode array structure, in particular to a stacked light-emitting diode array structure.

　　發光二極體(Light Emitting Diode，LED)是一種半導體發光元件，其被施加正向偏壓時，將會致電發光。目前發光二極體已經發展可以操作在高電壓之交流電源(如AC 110V/220V)上。再者，由於發光二極體相較於電燈泡(如白熾燈泡)或日光燈管(如螢光燈管)係具有低功率消耗及使用壽命長之優點，故發光二極體逐漸地取代電燈泡或日光燈管作為照明之用。A Light Emitting Diode (LED) is a semiconductor light-emitting element that will emit light when it is forward biased. At present, light-emitting diodes have been developed to operate on high voltage AC power sources (such as AC 110V/220V). Furthermore, since the light-emitting diode has the advantages of low power consumption and long service life compared to an electric bulb (such as an incandescent bulb) or a fluorescent tube (such as a fluorescent tube), the light-emitting diode gradually replaces the light bulb or the fluorescent lamp. The tube is used for lighting.

　　發光二極體應用於照明用途時，一般都會將多數個發光二極體串接成一陣列形式，以利用多數個發光二極體進行發光而獲得一寬廣的發光區域。When the light-emitting diode is used for lighting purposes, a plurality of light-emitting diodes are generally connected in series to form a wide light-emitting area by using a plurality of light-emitting diodes to emit light.

　　請參閱第1圖，為習用發光二極體陣列結構之結構示意圖。如圖所示，在單一基板11上，橫向設置多個發光二極體裸晶13，並且每一發光二極體裸晶13間隔一定的距離。再者，每一發光二極體裸晶13之第一電極131利用一金屬線15連接至另一相鄰發光二極體裸晶13之第二電極132，並且利用金屬線15將最左邊發光二極體裸晶13之第一電極131連接至基板11之一第一電位墊111及利用金屬線15將最右邊發光二極體裸晶13之第二電極132連接至基板11之一第二電位墊113。在此，藉由金屬線15的電性連接，而令這些發光二極體裸晶13可以串接成一發光二極體陣列100。Please refer to FIG. 1 , which is a schematic structural view of a conventional LED array structure. As shown, on the single substrate 11, a plurality of light-emitting diode bare electrodes 13 are laterally disposed, and each of the light-emitting diode bare electrodes 13 is spaced apart by a certain distance. Furthermore, the first electrode 131 of each of the LEDs 13 is connected to the second electrode 132 of another adjacent LED 13 by a metal line 15, and the leftmost side is illuminated by the metal line 15. The first electrode 131 of the diode die 13 is connected to one of the first potential pads 111 of the substrate 11 and the second electrode 132 of the rightmost LED die 13 is connected to the second of the substrate 11 by the metal wires 15 Potential pad 113. Here, the light-emitting diodes 13 can be connected in series to form a light-emitting diode array 100 by electrical connection of the metal wires 15.

　　然而，由於習用發光二極體陣列100只能在一有限的橫向空間內排列設置發光二極體裸晶13，導致一預定的區域空間內無法設置較多數量的發光二極體裸晶13，而令發光強度往往無法有效地提升。However, since the conventional LED array 100 can only arrange the LEDs 13 in a limited lateral space, a large number of LEDs 13 cannot be disposed in a predetermined area. However, the luminous intensity often cannot be effectively improved.

　　或者，請參閱第2圖，為習用另一發光二極體陣列結構之結構示意圖。如圖所示，發光二極體陣列200包括一基板21及複數個發光二極體元件23，這些發光二極體元件23分別為一封裝完成之電子元件。各發光二極體元件23將以垂直方向堆疊設置於基板21之上，並且各發光二極體元件23之間將隔離設置一透光板材25。其中，最下層之發光二極體元件23之第一電極231利用金屬線27連接至基板21之第一電位墊211，最上層之發光二極體元件23之第二電極233利用金屬線27連接至基板21之第二電位墊213，以及各發光二極體元件23之第一電極231利用金屬線27連接至另一發光二極體之第二電極233。在此，藉由金屬線27的電性連接，以將這些發光二極體元件23串接成另一種發光二極體陣列200。Alternatively, please refer to FIG. 2, which is a schematic structural view of another LED array structure. As shown, the LED array 200 includes a substrate 21 and a plurality of LED components 23, each of which is a packaged electronic component. The light-emitting diode elements 23 are stacked on the substrate 21 in a vertical direction, and a light-transmitting sheet 25 is disposed between the light-emitting diode elements 23 . The first electrode 231 of the lowermost light-emitting diode element 23 is connected to the first potential pad 211 of the substrate 21 by a metal wire 27, and the second electrode 233 of the uppermost light-emitting diode element 23 is connected by a metal wire 27. The second potential pad 213 to the substrate 21 and the first electrode 231 of each of the light emitting diode elements 23 are connected to the second electrode 233 of the other light emitting diode by a metal wire 27. Here, the light-emitting diode elements 23 are connected in series to another light-emitting diode array 200 by electrical connection of the metal wires 27.

　　習用另一種發光二極體陣列200採用堆疊方式進行各發光二極體元件23之佈設，雖然易於調整發光二極體元件23在一預定的區域空間內之設置數量。然而，該發光二極體陣列200必須採用每一封裝完成後的發光二極體元件23作為基本的組成構件相對地也會增加封裝的成本及整體的設置體積。
Another type of light-emitting diode array 200 is conventionally arranged in a stacked manner for each of the light-emitting diode elements 23, although it is easy to adjust the number of the light-emitting diode elements 23 disposed in a predetermined area. However, the LED array 200 must use the LED component 23 after each package as a basic component to relatively increase the cost of the package and the overall installation volume.

　　本發明之一目的，在於提供一種堆疊式發光二極體陣列結構，其利用堆疊方式將多個發光二極體裸晶垂直地向上疊設成一發光二極體陣列，如此將可在一區域空間內設置較多數量之發光二極體裸晶。An object of the present invention is to provide a stacked LED array structure in which a plurality of LEDs are stacked vertically in a stacked manner to form an array of LEDs, so that it can be in an area. A larger number of LEDs are placed in the space.

　　本發明之一目的，在於提供一種堆疊式發光二極體陣列結構，其採用製程方式係將製作多個發光二極體裸晶之半導體材料直接沉積於基板之上，以在基板之上形成發光二極體陣列，在此，不僅容易進行發光二極體陣列之製作，且可以有效降低發光二極體陣列整體的設置體積。An object of the present invention is to provide a stacked LED array structure in which a semiconductor material in which a plurality of LEDs are fabricated is directly deposited on a substrate to form a light-emitting layer on the substrate. In the case of the diode array, not only the fabrication of the light-emitting diode array but also the entire installation volume of the light-emitting diode array can be effectively reduced.

　　本發明之一目的，在於提供一種堆疊式發光二極體陣列結構，其可將多組堆疊式發光二極體陣列橫向設置於基板之上，以進一步獲得更寬廣的發光區域及提升區域的發光強度。An object of the present invention is to provide a stacked LED array structure, wherein a plurality of stacked LED arrays can be laterally disposed on a substrate to further obtain a wider illumination area and a light-emitting area. strength.

　　本發明之一目的，在於提供一種堆疊式發光二極體陣列結構，其堆疊式發光二極體陣列係以覆晶方式設置於基板之上。An object of the present invention is to provide a stacked LED array structure in which a stacked LED array is disposed on a substrate in a flip chip manner.

　　為達成上述目的，本發明提供一種堆疊式發光二極體陣列結構，包括：一基板，其表面設置一第一電位墊及一第二電位墊；複數個發光二極體裸晶，依序堆疊於基板之上，每一發光二極體裸晶分別包括：一第一半導體層；及一第二半導體層，其中第一半導體層之上表面設置有一第一電極及疊設有第二半導體層，而第二半導體層之上表面設置有一第二電極及/或疊設另一個發光二極體之第一半導體層；及至少一金屬層，每一發光二極體裸晶之第二電極透過對應的金屬層與另一發光二極體裸晶之第一電極進行連接，以串接成一發光二極體陣列；其中，堆疊在最下方之第一半導體層之第一電極透過一金屬線連接至基板之第一電位墊，堆疊在最上方的第二半導體層之第二電極透過另一金屬線連接至基板之第二電位墊。In order to achieve the above object, the present invention provides a stacked LED array structure, comprising: a substrate having a first potential pad and a second potential pad disposed on a surface thereof; a plurality of light emitting diodes are bare, sequentially stacked On the substrate, each of the LEDs includes: a first semiconductor layer; and a second semiconductor layer, wherein a first electrode is disposed on the upper surface of the first semiconductor layer and a second semiconductor layer is stacked a second semiconductor layer and/or a first semiconductor layer on which another light emitting diode is stacked; and at least one metal layer, the second electrode of each of the light emitting diodes is transparent Corresponding metal layer is connected to the first electrode of another LED diode to be connected in series to form a light emitting diode array; wherein the first electrode stacked on the lowermost first semiconductor layer is connected through a metal wire The first potential pad to the substrate, the second electrode stacked on the uppermost second semiconductor layer is connected to the second potential pad of the substrate through another metal line.

　　本發明又提供一種堆疊式發光二極體陣列結構，包括：一基板，其表面設置一第一電位墊及一第二電位墊；複數個發光二極體裸晶，依序堆疊於基底之上，每一發光二極體裸晶分別包括：一第一半導體層；及一第二半導體層，其中第一半導體層之上表面設置有一第一電極及疊設有第二半導體層，而第二半導體層之上表面設置有一第二電極及/或疊設另一個發光二極體之第一半導體層；及至少一金屬層，每一發光二極體裸晶之第二電極透過對應的金屬層與另一發光二極體裸晶之第一電極進行連接，以串接成一發光二極體陣列；其中，發光二極體陣列透過覆晶形式設置於基板之上，堆疊在最下方之第一半導體層之第一電極連接至基板之第一電位墊，堆疊在最上方的第二半導體層之第二電極連接至基板之第二電位墊。The present invention further provides a stacked LED array structure, comprising: a substrate having a first potential pad and a second potential pad disposed on the surface; a plurality of LED dipoles are sequentially stacked on the substrate Each of the LEDs includes: a first semiconductor layer; and a second semiconductor layer, wherein a first electrode is disposed on the upper surface of the first semiconductor layer and a second semiconductor layer is stacked, and the second a second electrode is disposed on the upper surface of the semiconductor layer and/or a first semiconductor layer on which another light emitting diode is stacked; and at least one metal layer, and the second electrode of each of the bare diodes transmits through the corresponding metal layer Connecting with the first electrode of another LED diode to be connected in series to form an array of light emitting diodes; wherein the LED array is disposed on the substrate through the flip chip form, stacked first at the bottom The first electrode of the semiconductor layer is connected to the first potential pad of the substrate, and the second electrode of the second semiconductor layer stacked on the uppermost layer is connected to the second potential pad of the substrate.

　　本發明一實施例中，其中第一半導體層為一N型半導體層，第二半導體層為一P型半導體層。In an embodiment of the invention, the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer.

　　本發明一實施例中，其中在基板之上橫向設置有多組堆疊式發光二極體陣列。
In an embodiment of the invention, a plurality of sets of stacked LED arrays are laterally disposed on the substrate.

100．．．發光二極體陣列100. . . Light-emitting diode array

11．．．基板11. . . Substrate

111．．．第一電位墊111. . . First potential pad

113．．．第二電位墊113. . . Second potential pad

13．．．發光二極體裸晶13. . . LED diode

131．．．第一電極131. . . First electrode

132．．．第二電極132. . . Second electrode

15．．．金屬線15. . . metal wires

200．．．發光二極體陣列200. . . Light-emitting diode array

21．．．基板twenty one. . . Substrate

211．．．第一電位墊211. . . First potential pad

213．．．第二電位墊213. . . Second potential pad

23．．．發光二極體元件twenty three. . . Light-emitting diode component

231．．．第一電極231. . . First electrode

233．．．第二電極233. . . Second electrode

25．．．透光板材25. . . Translucent sheet

27．．．金屬線27. . . metal wires

300．．．發光二極體陣列300. . . Light-emitting diode array

301．．．發光二極體陣列301. . . Light-emitting diode array

31．．．基板31. . . Substrate

311．．．第一電位墊311. . . First potential pad

313．．．第二電位墊313. . . Second potential pad

33．．．發光二極體裸晶33. . . LED diode

330．．．基底330. . . Base

331．．．第一半導體層331. . . First semiconductor layer

3311．．．第一電極3311. . . First electrode

333．．．第二半導體層333. . . Second semiconductor layer

3331．．．第二電極3331. . . Second electrode

35．．．金屬層35. . . Metal layer

371．．．金屬線371. . . metal wires

373．．．金屬線373. . . metal wires

第1圖：習用發光二極體陣列結構之結構示意圖。
第2圖：習用另一發光二極體陣列結構之結構示意圖。
第3圖：本發明堆疊式發光二極體陣列結構一較佳實施例之結構示意圖。
第4A-4B圖：本發明堆疊式發光二極體陣列結構又一實施例之結構製作流程圖。
第5圖：本發明堆疊式發光二極體陣列結構又一實施例之結構示意圖。
第6圖：本發明堆疊式發光二極體陣列結構又一實施例之結構示意圖。
Figure 1: Schematic diagram of a conventional light-emitting diode array structure.
Fig. 2 is a schematic view showing the structure of another light-emitting diode array structure.
FIG. 3 is a schematic view showing the structure of a stacked LED array structure according to a preferred embodiment of the present invention.
4A-4B is a flow chart showing the structure of another embodiment of the stacked LED array structure of the present invention.
Fig. 5 is a structural schematic view showing still another embodiment of the stacked light-emitting diode array structure of the present invention.
Figure 6 is a schematic view showing the structure of still another embodiment of the stacked light-emitting diode array structure of the present invention.

　　請參閱第3圖，為本發明堆疊式發光二極體陣列結構一較佳實施例之結構示意圖。如圖所示，發光二極體陣列300包括一基板31及複數個發光二極體裸晶33。Please refer to FIG. 3 , which is a schematic structural view of a stacked LED array structure according to a preferred embodiment of the present invention. As shown, the LED array 300 includes a substrate 31 and a plurality of LED dipoles 33.

　　各發光二極體裸晶33依序堆疊於基板31之上，其分別包括有一第一半導體層331及一第二半導體層333。第一半導體層331為一N型半導體層，而第二半導體層333為一P型半導體層。Each of the LEDs 33 is sequentially stacked on the substrate 31 and includes a first semiconductor layer 331 and a second semiconductor layer 333, respectively. The first semiconductor layer 331 is an N-type semiconductor layer, and the second semiconductor layer 333 is a P-type semiconductor layer.

　　利用沉積程序，以將每一發光二極體裸晶33之第二半導體層333沉積疊設於第一半導體層331之部分表面上，以及將每一發光二極體裸晶33之第一半導體層331沉積疊設於基板31之部分表面上或另一發光二極體裸晶33之第二半導體層333之部分表面上。再者，第一半導體層331之一側邊外露表面係可設置有一第一電極3311，而第二半導體層333之一側邊外露表面係可設置有一第二電極3331。每一發光二極體裸晶33之第二電極3331分別透過一金屬層35與另一發光二極體裸晶33之第一電極3311進行電性連接，以令這些發光二極體裸晶33可以串接成發光二極體陣列300。此外，金屬層35同樣利用沉積程序以沉積於第二半導體層333之側邊外露表面上。Depositing a deposition process to deposit a second semiconductor layer 333 of each of the light-emitting diodes 33 on a portion of the surface of the first semiconductor layer 331 and a first semiconductor of each of the light-emitting diodes 33 The layer 331 is deposited on a portion of the surface of the substrate 31 or a portion of the surface of the second semiconductor layer 333 of the other of the light emitting diodes 33. Furthermore, one of the exposed surfaces of the first semiconductor layer 331 may be provided with a first electrode 3311, and one of the exposed surfaces of the second semiconductor layer 333 may be provided with a second electrode 3331. The second electrode 3331 of each of the LEDs 33 is electrically connected to the first electrode 3311 of the other LED 33 through a metal layer 35 to make the LEDs 33 The LED array 300 can be connected in series. In addition, the metal layer 35 is also deposited on the exposed side surfaces of the second semiconductor layer 333 by a deposition process.

　　又，基板31的表面尚設置一第一電位墊311及一第二電位墊313。第一電位墊311亦可為一接地的電位墊，而第二電位墊313亦可為一供電的電位墊。於本發明實施例中，堆疊於最下方之第一半導體層331之第一電極3311可以透過一金屬線371連接至基板31之第一電位墊311，而堆疊在最上方之第二半導體層333之第二電極3331透過另一金屬線373連接至基板31之第二電位墊313。則，經由基板31之第一電位墊311及第二電位墊313傳送供電電源，以使發光二極體陣列300可以驅動發光。Moreover, a first potential pad 311 and a second potential pad 313 are further disposed on the surface of the substrate 31. The first potential pad 311 can also be a grounded potential pad, and the second potential pad 313 can also be a powered potential pad. In the embodiment of the present invention, the first electrode 3311 stacked on the lowermost first semiconductor layer 331 may be connected to the first potential pad 311 of the substrate 31 through a metal line 371, and stacked on the uppermost second semiconductor layer 333. The second electrode 3331 is connected to the second potential pad 313 of the substrate 31 through another metal line 373. Then, the power supply is transmitted through the first potential pad 311 and the second potential pad 313 of the substrate 31, so that the LED array 300 can drive the light.

　　在此，本發明採用製程的方式係將製作多個發光二極體裸晶33之半導體材料331、333依序垂直地向上沉積疊設於基板31之上，以在基板31之上形成發光二極體陣列300。如此，不僅容易進行發光二極體陣列300之製作，且有效降低發光二極體陣列300整體的設置體積，並可以在一區域空間內設置較多數量之發光二極體裸晶33。Here, in the method of the present invention, the semiconductor materials 331 and 333 of the plurality of light-emitting diodes 33 are sequentially stacked vertically on the substrate 31 to form a light-emitting layer on the substrate 31. Polar body array 300. In this way, not only the fabrication of the LED array 300 but also the overall installation volume of the LED array 300 can be effectively reduced, and a larger number of LED dipoles 33 can be disposed in a region.

　　請參閱第4A-4B圖，為本發明堆疊式發光二極體陣列結構又一實施例之結構製作流程圖。在上述實施例中，發光二極體陣列300採用打線方式(如金屬線371、373)電性接合至基板31之第一電位墊311及第二電位墊313。而，在本實施例中，發光二極體陣列301採用覆晶方式電性接合至基板31之第一電位墊311及第二電位墊313。Please refer to FIG. 4A-4B, which is a flow chart of the structure of another embodiment of the stacked LED array structure of the present invention. In the above embodiment, the LED array 300 is electrically bonded to the first potential pad 311 and the second potential pad 313 of the substrate 31 by wire bonding (such as metal wires 371 and 373). In the present embodiment, the LED array 301 is electrically bonded to the first potential pad 311 and the second potential pad 313 of the substrate 31 by flip chip bonding.

　　如第4A圖所示，首先，多個發光二極體裸晶33將會依序堆疊在一透光之基底330之上，以在基底330之上形成一發光二極體陣列301。接著，如第4B圖所示，發光二極體陣列301形成之後，翻轉發光二極體陣列301，以令堆疊在最下方之第一半導體層331之第一電極3311利用凸塊接合至基板31之第一電位墊311，而堆疊在最上方之第二半導體層333之第二電極3331利用凸塊接合至基板31之第二電位墊313。As shown in FIG. 4A, first, a plurality of LEDs 33 will be sequentially stacked on a light-transmissive substrate 330 to form a light-emitting diode array 301 over the substrate 330. Next, as shown in FIG. 4B, after the LED array 301 is formed, the LED array 301 is flipped so that the first electrode 3311 of the first semiconductor layer 331 stacked at the bottom is bonded to the substrate 31 by bumps. The first potential pad 311, and the second electrode 3331 of the second semiconductor layer 333 stacked on the uppermost side is bonded to the second potential pad 313 of the substrate 31 by bumps.

　　則，本發明堆疊式之發光二極體陣列301採用覆晶方式設置於基板31之上，將可以增加發光二極體陣列301與基板31之間電性連接上的穩定性。Then, the stacked LED array 301 of the present invention is disposed on the substrate 31 in a flip chip manner, which can increase the stability of the electrical connection between the LED array 301 and the substrate 31.

　　請參閱第5圖，為本發明堆疊式發光二極體陣列結構又一實施例之結構示意圖。如圖所示，多組堆疊式發光二極體陣列300係可以利用打線的方式橫向設置於基板31之上。Please refer to FIG. 5 , which is a schematic structural view of still another embodiment of the stacked LED array structure of the present invention. As shown, the plurality of stacked LED arrays 300 can be laterally disposed on the substrate 31 by wire bonding.

　　或者，請參閱第6圖，為本發明堆疊式發光二極體陣列結構又一實施例之結構示意圖。如圖所示，多組堆疊式發光二極體陣列301係可以利用覆晶的方式橫向設置於基板31之上。Alternatively, please refer to FIG. 6 , which is a schematic structural diagram of still another embodiment of the stacked LED array structure of the present invention. As shown, the plurality of stacked LED arrays 301 can be laterally disposed on the substrate 31 by flip chip.

　　在此，本發明若應用於照明用途時，於基板31之上設置多組堆疊式之發光二極體陣列300/301，將可以獲得更寬廣的發光區域及提升區域的發光強度。Here, when the present invention is applied to illumination applications, a plurality of stacked LED arrays 300/301 are disposed on the substrate 31, so that a wider illumination area and a light-emitting intensity of the lift area can be obtained.

　　以上所述者，僅為本發明之一較佳實施例而已，並非用來限定本發明實施之範圍，即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, which is equivalent to the changes in shape, structure, features and spirit of the present invention. Modifications are intended to be included in the scope of the patent application of the present invention.

300．．．發光二極體陣列300. . . Light-emitting diode array

31．．．基板31. . . Substrate

311．．．第一電位墊311. . . First potential pad

313．．．第二電位墊313. . . Second potential pad

33．．．發光二極體裸晶33. . . LED diode

331．．．第一半導體層331. . . First semiconductor layer

3311．．．第一電極3311. . . First electrode

333．．．第二半導體層333. . . Second semiconductor layer

3331．．．第二電極3331. . . Second electrode

35．．．金屬層35. . . Metal layer

371．．．金屬線371. . . metal wires

373．．．金屬線373. . . metal wires

Claims (6)

一種堆疊式發光二極體陣列結構，包括：一基板，其表面設置一第一電位墊及一第二電位墊；複數個發光二極體裸晶，依序堆疊於基板之上，每一發光二極體裸晶分別包括：一第一半導體層；及一第二半導體層，其中第一半導體層之上表面設置有一第一電極及疊設有第二半導體層，而第二半導體層之上表面設置有一第二電極及/或疊設另一個發光二極體之第一半導體層；及至少一金屬層，每一發光二極體裸晶之第二電極透過對應的金屬層與另一發光二極體裸晶之第一電極進行連接，以串接成一發光二極體陣列；其中，堆疊在最下方之第一半導體層之第一電極透過一金屬線連接至基板之第一電位墊，堆疊在最上方的第二半導體層之第二電極透過另一金屬線連接至基板之第二電位墊。A stacked LED array structure includes: a substrate having a first potential pad and a second potential pad disposed on a surface thereof; a plurality of LEDs are barely stacked on the substrate in sequence, each of which emits light The diode die includes a first semiconductor layer and a second semiconductor layer, wherein a first electrode is disposed on the upper surface of the first semiconductor layer and a second semiconductor layer is stacked on the second semiconductor layer a second electrode and/or a first semiconductor layer on which another light emitting diode is stacked; and at least one metal layer, wherein the second electrode of each of the bare diodes transmits through the corresponding metal layer and another light The first electrodes of the diode die are connected to be connected in series to form an array of light emitting diodes; wherein the first electrode stacked on the lowermost first semiconductor layer is connected to the first potential pad of the substrate through a metal wire, The second electrode stacked on the uppermost second semiconductor layer is connected to the second potential pad of the substrate through another metal line. 如申請專利範圍第1項所述之堆疊式發光二極體陣列結構，其中該第一半導體層為一N型半導體層，該第二半導體層為一P型半導體層。The stacked LED array structure of claim 1, wherein the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer. 如申請專利範圍第1項所述之堆疊式發光二極體陣列結構，其中在該基板之上橫向設置有多組該堆疊式發光二極體陣列。The stacked LED array structure of claim 1, wherein a plurality of the stacked LED arrays are laterally disposed on the substrate. 一種堆疊式發光二極體陣列結構，包括：一基板，其表面設置一第一電位墊及一第二電位墊；複數個發光二極體裸晶，依序堆疊於基底之上，每一發光二極體裸晶分別包括：一第一半導體層；及一第二半導體層，其中第一半導體層之上表面設置有一第一電極及疊設有第二半導體層，而第二半導體層之上表面設置有一第二電極及/或疊設另一個發光二極體之第一半導體層；及至少一金屬層，每一發光二極體裸晶之第二電極透過對應的金屬層與另一發光二極體裸晶之第一電極進行連接，以串接成一發光二極體陣列；其中，發光二極體陣列透過覆晶形式設置於基板之上，堆疊在最下方之第一半導體層之第一電極連接至基板之第一電位墊，堆疊在最上方的第二半導體層之第二電極連接至基板之第二電位墊。A stacked LED array structure includes: a substrate having a first potential pad and a second potential pad disposed on a surface thereof; a plurality of LEDs are barely stacked on the substrate in sequence, each of which emits light The diode die includes a first semiconductor layer and a second semiconductor layer, wherein a first electrode is disposed on the upper surface of the first semiconductor layer and a second semiconductor layer is stacked on the second semiconductor layer a second electrode and/or a first semiconductor layer on which another light emitting diode is stacked; and at least one metal layer, wherein the second electrode of each of the bare diodes transmits through the corresponding metal layer and another light The first electrodes of the diode die are connected to be connected in series to form an array of light emitting diodes; wherein the array of light emitting diodes is disposed on the substrate through the flip chip form, and stacked on the first semiconductor layer at the bottom An electrode is connected to the first potential pad of the substrate, and a second electrode of the second semiconductor layer stacked on the uppermost side is connected to the second potential pad of the substrate. 如申請專利範圍第4項所述之堆疊式發光二極體陣列結構，其中該第一半導體層為一N型半導體層，該第二半導體層為一P型半導體層。The stacked LED array structure of claim 4, wherein the first semiconductor layer is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer. 如申請專利範圍第4項所述之堆疊式發光二極體陣列結構，其中在該基板之上橫向設置有多組該堆疊式發光二極體陣列。The stacked LED array structure of claim 4, wherein a plurality of the stacked LED arrays are laterally disposed on the substrate.
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