CN102005515A - Light emitting diode with low-temperature interlayer of gallium nitride series - Google Patents
Light emitting diode with low-temperature interlayer of gallium nitride series Download PDFInfo
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- CN102005515A CN102005515A CN200910194802XA CN200910194802A CN102005515A CN 102005515 A CN102005515 A CN 102005515A CN 200910194802X A CN200910194802X A CN 200910194802XA CN 200910194802 A CN200910194802 A CN 200910194802A CN 102005515 A CN102005515 A CN 102005515A
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Abstract
The invention relates to a light emitting diode with a low-temperature interlayer of gallium nitride series, wherein the major difference for the structure of the light emitting diode with low-temperature interlayer of gallium nitride series to the existing light emitting diode of gallium nitride series is that a low-temperature interlayer is generated between a InGaN/GaN multiple quantum-well active layer and a p type GaN contact layer, and the low-temperature interlayer is composed of a p type low-temperature gallium nitride layer and a p type low-temperature InGaN/InLAlGaN superlattice. The result of the embodiment provided by the invention indicates that the luminous intensity and luminous efficiency of the light emitting diode of gallium nitride series are improved greatly.
Description
Technical field
The present invention relates to a kind of GaN series LED, particularly a kind of GaN series LED with low temperature intermediate layer.
Background technology
Light-emitting diode has with its high-efficiency environment friendly and replaces the potentiality that incandescent lamp, fluorescent lamp become illuminating product of future generation.The GaN series LED of broad-band gap (abbreviating " LED " as) is one of emphasis of present industry research.
In existing gallium nitride based LED, adopt sapphire usually as substrate.Yet, because the lattice mismatch between sapphire and the III group-III nitride and the polarization characteristic of III group-III nitride, make the very strong polarization field of existence in active layer and whole LED structure, thereby weakened restriction, reduced the luminous efficiency of device charge carrier.Though adopt p type aluminum gallium nitride electronic barrier layer (EBL, Electron blockinglayer) to strengthen the restriction to charge carrier at present usually, effect is unsatisfactory.
In addition, existing gallium nitride based LED adopts the p type GaN layer of high growth temperature as contact layer usually, and p type contact layer is usually located at active layer (luminescent layer) top.People find in the manufacturing process of reality, when growing p-type GaN contact layer at high temperature, indium gallium nitrogen in the active layer can take place to decompose and diffusion, and the p type dopant (such as magnesium) in the p type GaN contact layer is at high temperature very fast to the diffusion increase ground of active layer.Therefore, in the process of p type GaN contact layer high growth temperature, the characteristic of active layer can not be kept, then the photoelectric characteristic variation of active layer, thus have a strong impact on the characteristics of luminescence of light-emitting diode.Similarly, also there are the problems referred to above in the p type aluminum gallium nitride electronic barrier layer of high growth temperature.
Therefore, in order to overcome the problems referred to above, carried out the present invention.
Summary of the invention
The object of the present invention is to provide a kind of not only effectively limiting carrier, but also can reduce GaN series LED with low temperature intermediate layer to the adverse effect of active layer.
GaN series LED of the present invention comprises:
Substrate, its monocrystalline oxide that can be approached nitride-based semiconductor by alumina single crystal, 6H-SiC, 4H-SiC or the lattice constant of C-face, R-face or A-face is made;
Resilient coating, it is positioned on this substrate, can be by In
xAl
1-x-yGa
yN constitutes, wherein 0≤x＜1,0≤y≤1;
N type contact layer, it is positioned on this resilient coating, and GaN constitutes by the n type;
Active layer, it is positioned on this n type contact layer and covers the part surface of this n type contact layer, by In
xGa
1-xN trap layer and In
yAl
zGa
1-y-zThe Multiple Quantum Well that N builds the formation of layer interaction cascading constitutes, wherein 0＜x＜1,0≤y＜1,0≤z＜1,0≤y+z＜1;
Negative electrode, it is positioned on the upper surface that this n type contact layer do not cover by this active layer;
The low temperature intermediate layer, it is positioned on this active layer, is made up of low temperature p type GaN layer and low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice;
P type contact layer, it is positioned on this low temperature intermediate layer, is made of p type III group-III nitride semiconductor;
Positive electrode, it is positioned on this p type contact layer.
Low temperature intermediate layer among the present invention is meant that the growth temperature of the low temperature p type GaN layer that constitutes it and/or low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is lower than the In in the active layer that is in direct contact with it
yAl
zGa
1-y-zN builds the intermediate layer of the growth temperature of layer.
In an embodiment of the invention, low-temperature epitaxy p type GaN layer on active layer earlier, low-temperature epitaxy p type indium gallium nitrogen/aluminium gallium nitrogen superlattice on low temperature p type GaN layer again, thus form the low temperature intermediate layer.
In another embodiment of the present invention, low-temperature epitaxy p type indium gallium nitrogen/aluminium gallium nitrogen superlattice on active layer earlier, low-temperature epitaxy p type GaN layer on low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice again, thus form the low temperature intermediate layer.
In addition, the low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice in the low temperature intermediate layer can comprise first superlattice part and the second superlattice part, and this moment, low temperature p type GaN layer was between this first superlattice part and second superlattice part.
Low temperature p type GaN layer in the low temperature intermediate layer can comprise first and second portion, and low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice are between this first and second portion at this moment.
In embodiments of the present invention, the growth temperature of preferred low temperature p type GaN layer is lower than the growth temperature of low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice.
The growth temperature of preferred low temperature p type GaN layer and low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is 600～1100 ℃.When their growth temperature was lower than 600 ℃, crystal mass was too poor, thereby influenced the luminous efficiency of light-emitting diode.When their growth temperature surpasses 1100 ℃, can destroy the structure of active layer, thereby influence the luminous efficiency of light-emitting diode.
The growth temperature of preferred low temperature p type GaN layer or low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is than the In in the active layer that is in direct contact with it
yAl
zGa
1-y-zN builds the growth temperature of layer and hangs down 30～300 ℃, and this moment, the crystal mass of active layer can obtain bigger improvement, and can reduce the diffusion of p type dopant to the active region to greatest extent.
The thickness of the low temperature p type GaN layer among the present invention is preferably 5～300 nanometers, and the diffusion effect of low temperature p type GaN layer restriction this moment p type dopant is better, and less the effect that influences low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice limiting carrier.
When low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice in the present invention are an integral body, the gross thickness of low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is preferably 0.5～50 nanometer, the thickness of each indium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness of each aluminium gallium nitrogen individual layer is 0.1～5 nanometer, and the thickness in the single cycle that is made of indium gallium nitrogen individual layer and aluminium gallium nitrogen individual layer is 0.5～5 nanometer.The effect of low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice limiting carrier is better at this moment.
Low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice in the present invention comprise in the situation of first superlattice part and second superlattice part, the gross thickness of low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is preferably 0.5～100 nanometer, the thickness of each indium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness of each aluminium gallium nitrogen individual layer is 0.1～5 nanometer, and the thickness in the single cycle that is made of indium gallium nitrogen individual layer and aluminium gallium nitrogen individual layer is 0.5～5 nanometer.The effect of low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice limiting carrier is better at this moment.
The present invention is by being provided with the low temperature intermediate layer between the p of active layer and high growth temperature type contact layer, limiting carrier effectively, and reduce adverse effect to active layer, thus obtained the GaN series LED of high brightness.The growth temperature that is lower than low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice in this growth temperature with low temperature p type GaN layer is that example describes.
Formerly low-temperature epitaxy p type GaN layer, again in the situation of low-temperature epitaxy p type indium gallium nitrogen/aluminium gallium nitrogen superlattice, because low temperature p type GaN layer growth temperature is low, so reduced the diffusion of p type dopant (such as Mg) to greatest extent to the active region; In addition, the growth course of low temperature p type GaN layer is an annealing process to active layer, so the crystal mass of active layer is by crystallization again and by perfect.When low-temperature epitaxy p type indium gallium nitrogen next/aluminium gallium nitrogen superlattice; though temperature raises relatively to some extent; but because the crystal mass of the GaN layer of the rapid low-temperature epitaxy of previous step is relatively poor; so reduced the diffusion of p type dopant (such as Mg) in low temperature p type GaN layer effectively, thereby the active region played a protective role.
Formerly low-temperature epitaxy p type indium gallium nitrogen/aluminium gallium nitrogen superlattice, again in the situation of low-temperature epitaxy p type GaN layer, because the p type indium gallium nitrogen/growth temperature of aluminium gallium nitrogen superlattice is lower than the growth temperature of p type GaN contact layer, so relatively reduced the influence to the active region; The In that mixes in p type indium gallium nitrogen/aluminium gallium nitrogen superlattice can suppress the migration of p type dopant (such as Mg) effectively simultaneously, thereby has reduced the influence that makes the luminous efficiency reduction because of p type dopant to the diffusion of active region.Next with lower temperature growing low temperature p type GaN layer time, active region and low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice are annealed and are had the crystal mass of raising.
In addition, the low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice in the low temperature intermediate layer can serve as electronic barrier layer effectively.Usually use p type aluminum gallium nitride as electronic barrier layer in the prior art, but the growth temperature of AlGaN higher (usually above the growth temperature of active layer) is bigger to the influence of active region; Simultaneously, the piezoelectric field effect that lattice mismatch caused of AlGaN and GaN has weakened its stopping electronics.And adopt low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice to have following advantage among the present invention as electronic barrier layer.On the one hand, the low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice among the present invention are grown under with respect to the lower temperature of p type AlGaN, thereby have reduced the influence to the active region.On the other hand, owing to can recently regulate the effective lattice constant and the band gap width of these superlattice by the component of regulating each composition in p type indium gallium nitrogen/aluminium gallium nitrogen superlattice, thus can reduce polarity effect with improve electronics stop aspect in the outstanding balance of acquisition.
Description of drawings
Fig. 1 is the schematic diagram according to the embodiment 1 of the GaN series LED with low temperature intermediate layer of the present invention.
Fig. 2 is the schematic diagram according to the embodiment 2 of the GaN series LED with low temperature intermediate layer of the present invention.
Fig. 3 is the schematic diagram according to the embodiment 3 of the GaN series LED with low temperature intermediate layer of the present invention.
Fig. 4 is the schematic diagram according to the embodiment 4 of the GaN series LED with low temperature intermediate layer of the present invention.
Fig. 5 is existing and according to the forward injection current-luminous intensity I-L curve of GaN series LED of the present invention, and wherein the lines of circular mark are the GaN series LED with low temperature intermediate layer of the present invention; The lines of square mark are the existing GaN series LED that does not have the low temperature intermediate layer.
The explanation of reference number:
10 substrates
11 resilient coatings
12n type GaN contact layer
13 active layers
14 low temperature p type GaN layers
15 low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice
16p type GaN contact layer
17n type electrode layer
18p type electrode layer
20 substrates
21 resilient coatings
22n type GaN layer
23 active layers
24 low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice
25 low temperature p type GaN layers
26p type GaN contact layer
27n type electrode layer
28p type electrode layer
30 substrates
31 resilient coatings
32n type GaN layer
33 active layers
34 low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice
340 first superlattice parts
341 second superlattice parts
35 low temperature p type GaN layers
36p type GaN contact layer
37n type electrode layer
38p type electrode layer
40 substrates
41 resilient coatings
42n type GaN layer
43 active layers
44 low temperature p type GaN layers
440 firsts
441 second portions
45 low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice
46p type GaN contact layer
47n type electrode layer
48p type electrode layer
Embodiment
Below in conjunction with drawings and Examples the present invention is described in detail, but the present invention is not limited to this.
Fig. 1 is the schematic diagram according to the embodiment 1 of the GaN series LED with low temperature intermediate layer of the present invention.As shown in Figure 1, this embodiment is to be substrate 10 with the alumina single crystal of C-face, R-face or A-face or SiC (6H-SiC or 4H-SiC), and other materials that can be used for substrate 10 also comprise Si, ZnO, GaAs, spinelle (MgAl
2O
4) or lattice constant approach the monocrystalline oxide of nitride-based semiconductor.At first on substrate 10, form by In
xAl
1-x-yGa
yResilient coating 11 that N (wherein 0≤x＜1,0≤y≤1) is constituted and the n type GaN contact layer 12 on this resilient coating 11.Then form the active layer 13 that covers its part surface on this n type GaN contact layer 12, this active layer 13 is by In
xGa
1-xN (wherein 0＜x＜1) trap layer and In
yAl
zGa
1-y-zThe Multiple Quantum Well that N (0≤y＜1,0≤z＜1,0≤y+z＜1) builds the formation of layer interaction cascading constitutes.The part that is not covered by active layer 13 on n type GaN contact layer 12 forms n type electrode layer 17 in addition.
On this active layer 13, form low temperature p type gallium nitride layer 14 then earlier, on this low temperature p type gallium nitride layer 14, form low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 15 again, thereby form the low temperature intermediate layer.Wherein low temperature p type gallium nitride layer 14 uses the p type GaN that mixes magnesium, and its thickness is 5～300 nanometers, and growth temperature is 600～1100 ℃, and the In in its growth temperature specific activity layer 13
yAl
zGa
1-y-zN builds the growth temperature of layer and hangs down 30～300 ℃.Low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 15 use the p type In that mixes magnesium
xGa
1-xN/In
yAl
zGa
1-y-zN (0＜x＜1 wherein, 0≤y＜1,0≤z＜1,0≤y+z＜1), this low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice are made up of the indium gallium nitrogen of 1～100 periodicity and the thin layer of aluminium gallium nitrogen, and its gross thickness is 0.5～50 nanometer, and the thickness of each indium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness of each aluminium gallium nitrogen individual layer is 0.1～5 nanometer, and the thickness in the single cycle that is made of indium gallium nitrogen individual layer and aluminium gallium nitrogen individual layer is 0.5～5 nanometer; The growth temperature of this low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is 600～1100 ℃, and the In in its growth temperature specific activity layer 13
yAl
zGa
1-y-zN builds the growth temperature of layer and hangs down 30～300 ℃.
The last p type gallium nitride contact layer 16 of high growth temperature and the p type electrode layer 18 on p type gallium nitride contact layer 16 of on low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 15, forming.
This p type electrode layer 18 can be metal conducting layer or oxidic, transparent, conductive layers, and wherein this metal conducting layer mainly comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWNx (x 〉=0) or WSix (x 〉=0); This oxidic, transparent, conductive layers mainly comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2
Fig. 2 is the schematic diagram according to the embodiment 2 of the GaN series LED with low temperature intermediate layer of the present invention.This embodiment 2 adopts the mode identical with embodiment 1 to make, different just, first on active layer 23 growing low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 24, growing low temperature p type gallium nitride layer 25 on these superlattice 24 again.
Fig. 3 is the schematic diagram according to the embodiment 3 of the GaN series LED with low temperature intermediate layer of the present invention.This embodiment 3 adopts the mode identical with embodiment 1 to make, different just low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 34 comprise the first superlattice part 340 and the second superlattice part 341, and low temperature p type gallium nitride layer 35 is between this first superlattice part 340 and the second superlattice part 341.The first superlattice part 340 and the second superlattice part 341 are made up of the indium gallium nitrogen of 1～100 periodicity and the thin layer of aluminium gallium nitrogen respectively, the thickness of each indium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness of each aluminium gallium nitrogen individual layer is 0.1～5 nanometer, and the thickness in the single cycle that is made of indium gallium nitrogen individual layer and aluminium gallium nitrogen individual layer is 0.5～5 nanometer.The gross thickness of this low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 34 (comprising 340 and 341) is 0.5～100 nanometer.
Fig. 4 is the schematic diagram according to the embodiment 4 of the GaN series LED with low temperature intermediate layer of the present invention.This embodiment 4 adopts the mode identical with embodiment 1 to make, different just, low temperature p type GaN layer 44 comprises first 440 and second portion 441, and low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice 45 are between first 440 and second portion 441.The thickness of this first 440 and second portion 441 is respectively 5～300 nanometers.
Fig. 5 is existing and according to the forward injection current-luminous intensity I-L curve of GaN series LED of the present invention, and wherein the lines of circular mark are the GaN series LED with low temperature intermediate layer of the present invention; The lines of square mark are the existing GaN series LED that does not have the low temperature intermediate layer.As seen from Figure 5, compare with traditional GaN series LED, GaN series LED with low temperature intermediate layer of the present invention has higher luminous intensity under identical forward injection current, its luminous efficiency is largely increased, especially when the forward injection current was higher, the raising of its luminous efficiency was more obvious.
The foregoing description only is used to specify the present invention, should not see limitation of the present invention as.Anyly do not break away from the various modifications and changes that aim of the present invention is carried out, all should be in protection scope of the present invention.
Claims (13)
1. GaN series LED, it comprises:
Substrate;
Resilient coating, it is positioned on the described substrate;
N type contact layer, it is positioned on the described resilient coating, and GaN constitutes by the n type;
Active layer, it is positioned on the described n type contact layer and covers the part surface of described n type contact layer, by In
xGa
1-xN trap layer and In
yAl
zGa
1-y-zThe Multiple Quantum Well that N builds the formation of layer interaction cascading constitutes, wherein 0＜x＜1,0≤y＜1,0≤z＜1,0≤y+z＜1;
Negative electrode, it is positioned on the upper surface that described n type contact layer do not cover by described active layer;
The low temperature intermediate layer, it is positioned on the described active layer, is made up of low temperature p type GaN layer and low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice;
P type contact layer, it is positioned on the described low temperature intermediate layer, is made of p type III group-III nitride semiconductor;
Positive electrode, it is positioned on the described p type contact layer.
2. GaN series LED as claimed in claim 1, it is characterized in that, described low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice comprise first superlattice part and the second superlattice part, and described low temperature p type GaN layer is between described first superlattice part and described second superlattice part.
3. GaN series LED as claimed in claim 1 is characterized in that, described low temperature p type GaN layer comprises first and second portion, and described low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice are between described first and described second portion.
4. GaN series LED as claimed in claim 1 is characterized in that, the growth temperature of described low temperature p type GaN layer is lower than the growth temperature of described low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice.
5. as each described GaN series LED in the claim 1～4, it is characterized in that the growth temperature of described low temperature p type GaN layer is 600～1100 ℃, its growth temperature is than the In in the described active layer that is in direct contact with it
yAl
zGa
1-y-zN builds the growth temperature of layer and hangs down 30～300 ℃.
6. GaN series LED as claimed in claim 1 or 2 is characterized in that, the thickness of described low temperature p type GaN layer is 5～300 nanometers.
7. GaN series LED as claimed in claim 3 is characterized in that, the first in the described low temperature p type GaN layer and the thickness of second portion are respectively 5～300 nanometers.
8. as each described GaN series LED in the claim 1～4, it is characterized in that the growth temperature of described low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is 600～1100 ℃, its growth temperature is than the In in the described active layer that is in direct contact with it
yAl
zGa
1-y-zN builds the growth temperature of layer and hangs down 30～300 ℃.
9. as claim 1 or 3 described GaN series LEDs, it is characterized in that, described low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice are made up of the indium gallium nitrogen of 1～100 periodicity and the thin layer of aluminium gallium nitrogen, its gross thickness is 0.5～50 nanometer, the thickness of each indium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness of each aluminium gallium nitrogen individual layer is 0.1～5 nanometer, and the thickness in the single cycle that is made of indium gallium nitrogen individual layer and aluminium gallium nitrogen individual layer is 0.5～5 nanometer.
10. GaN series LED as claimed in claim 2, it is characterized in that, described first superlattice part and described second superlattice part are made up of the indium gallium nitrogen of 1～100 periodicity and the thin layer of aluminium gallium nitrogen respectively, the thickness of each indium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness of each aluminium gallium nitrogen individual layer is 0.1～5 nanometer, the thickness in the single cycle that is made of indium gallium nitrogen individual layer and aluminium gallium nitrogen individual layer is 0.5～5 nanometer, and the gross thickness of described low temperature p type indium gallium nitrogen/aluminium gallium nitrogen superlattice is 0.5～100 nanometer.
11., it is characterized in that described low temperature p type indium gallium nitrogen/the aluminium gallium nitrogen superlattice are the p type In that mixes magnesium as each described GaN series LED in the claim 1～4
xGa
1-xN/In
yAl
zGa
1-y-zN superlattice, wherein 0＜x＜1,0≤y＜1,0≤z＜1,0≤y+z＜1.
12. as each described GaN series LED in the claim 1～4, it is characterized in that described substrate is made by the monocrystalline oxide that alumina single crystal, 6H-SiC, 4H-SiC or the lattice constant of C-face, R-face or A-face approaches nitride-based semiconductor.
13., it is characterized in that described resilient coating is by In as each described GaN series LED in the claim 1～4
xA1
1-x-yGa
yN constitutes, wherein 0≤x＜1,0≤y≤1.
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|---|---|---|---|
| CN200910194802XA CN102005515A (en) | 2009-08-28 | 2009-08-28 | Light emitting diode with low-temperature interlayer of gallium nitride series |
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|---|---|---|---|
| CN200910194802XA CN102005515A (en) | 2009-08-28 | 2009-08-28 | Light emitting diode with low-temperature interlayer of gallium nitride series |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931303A (en) * | 2012-10-22 | 2013-02-13 | 合肥彩虹蓝光科技有限公司 | Epitaxial structure and growing method thereof |
| CN103337451A (en) * | 2013-07-12 | 2013-10-02 | 湘能华磊光电股份有限公司 | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
| CN103700745A (en) * | 2014-01-03 | 2014-04-02 | 合肥彩虹蓝光科技有限公司 | High-brightness GaN-based light emitting diode epitaxial growth method |
| CN107093654A (en) * | 2017-03-16 | 2017-08-25 | 华灿光电（浙江）有限公司 | Manufacturing method of light-emitting diode epitaxial wafer |
| CN110635005A (en) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
-
2009
- 2009-08-28 CN CN200910194802XA patent/CN102005515A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931303A (en) * | 2012-10-22 | 2013-02-13 | 合肥彩虹蓝光科技有限公司 | Epitaxial structure and growing method thereof |
| CN103337451A (en) * | 2013-07-12 | 2013-10-02 | 湘能华磊光电股份有限公司 | Growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure |
| CN103337451B (en) * | 2013-07-12 | 2016-03-30 | 湘能华磊光电股份有限公司 | The growth method of electronic barrier layer of epitaxial structure and corresponding epitaxial structure thereof |
| CN103700745A (en) * | 2014-01-03 | 2014-04-02 | 合肥彩虹蓝光科技有限公司 | High-brightness GaN-based light emitting diode epitaxial growth method |
| CN107093654A (en) * | 2017-03-16 | 2017-08-25 | 华灿光电（浙江）有限公司 | Manufacturing method of light-emitting diode epitaxial wafer |
| CN107093654B (en) * | 2017-03-16 | 2019-06-11 | 华灿光电（浙江）有限公司 | Manufacturing method of light-emitting diode epitaxial wafer |
| CN110635005A (en) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure and preparation method thereof |
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Application publication date: 20110406 |