CN101859839A - Light-emitting diode (LED) chip - Google Patents
Light-emitting diode (LED) chip Download PDFInfo
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- CN101859839A CN101859839A CN200910131545A CN200910131545A CN101859839A CN 101859839 A CN101859839 A CN 101859839A CN 200910131545 A CN200910131545 A CN 200910131545A CN 200910131545 A CN200910131545 A CN 200910131545A CN 101859839 A CN101859839 A CN 101859839A
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Abstract
The invention discloses a light-emitting diode (LED) chip which mainly comprises a substrate, a first doped semiconductor layer, a second doped semiconductor layer, a light-emitting layer, at least one aluminum gallium nitride material layer doped with indium dopants, and at least a tunneling joint layer, wherein the first doped semiconductor layer is arranged on the substrate, and the light-emitting layer is arranged between the first doped semiconductor layer and the second doped semiconductor layer; the aluminum gallium nitride material layer doped with indium dopants is arranged on at least one surface of the light-emitting layer; and the tunneling joint layer is arranged between the aluminum gallium nitride material layer doped with indium dopants and the first doped semiconductor layer and/or between the aluminum gallium nitride material layer doped with indium dopants and the second doped semiconductor layer, wherein the aluminum gallium nitride material layer doped with indium dopants and the tunneling joint layer are positioned at the same side of the light-emitting layer. The LED of the invention has lower operating voltage, flatter surface and lower drain current and effectively improves the quality of the LED chip.
Description
Technical field
The present invention relates to a kind of semiconductor element, particularly relate to a kind of light-emitting diode (Light Emitting Diode, LED) chip.
Background technology
Light-emitting diode belongs to semiconductor element, and the material of its luminescence chip generally can use III-V family chemical element, as: gallium phosphide (GaP), GaAs (GaAs), gallium nitride compound semiconductors such as (GaN).Utilization applies electric current to above-mentioned these compound semiconductors, sees through the combination of electron hole pair, can transfer electric energy to luminous energy, and disengage with the form of light wave, reaches luminous effect.Because the luminescence phenomenon of light-emitting diode is that to belong to cold property luminous, but not by adding thermoluminescence, thus the life-span of light-emitting diode be more than 100,000 hours, and need not warm up the lamp time (idling time).In addition, light-emitting diode has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), reliability height, be fit to advantages such as volume production, therefore its applicable field of institute is very extensive, as the lamp source of scanner, the backlight of LCD screen, outdoor display billboard or automobile-used lighting apparatus etc.
Known light-emitting diode mainly is made up of luminescent layer, n type doping semiconductor layer and p type doping semiconductor layer, and wherein n type doping semiconductor layer and p type doping semiconductor layer are arranged at the both sides of luminescent layer respectively.Generally speaking, owing to have the do not match phenomenon of (lattice mismatch) of lattice between aforementioned each layer material, this can cause generations is bigger in the process of extension (epitaxy) stress (stress) and the reduction epitaxial quality.In addition,, make that the joint at p type doping semiconductor layer and luminescent layer can have bigger pressure drop, therefore need higher operating voltage ability operating light-emitting diodes (leds) because p type doping semiconductor layer has higher resistance value.
Summary of the invention
One of technical problem to be solved by this invention provides a kind of light-emitting diode chip for backlight unit, and it has lower operating voltage and more smooth surface, to solve above-mentioned situation.
Two of technical problem to be solved by this invention provides a kind of light-emitting diode chip for backlight unit, and it has lower leakage current.
For solving the problems of the technologies described above, a kind of light-emitting diode chip for backlight unit of the present invention, it comprises aluminium gallium nitride alloy based material layer (the In doped Al of substrate, the first type doping semiconductor layer, the second type doping semiconductor layer, luminescent layer, at least one doped indium admixture
xGa
1-xN based material layer, 0≤x＜1), at least one tunneling joint layer (tunneling junction layer), first electrode and second electrode.The first type doping semiconductor layer is arranged on the substrate, and the second type doping semiconductor layer is arranged at first type doping semiconductor layer top, and luminescent layer is arranged between the first type doping semiconductor layer and the second type doping semiconductor layer.The aluminium gallium nitride alloy based material layer of doped indium admixture is arranged on one of them surface of luminescent layer, and tunneling joint layer is arranged between the aluminium gallium nitride alloy based material layer of doped indium admixture and the first type doping semiconductor layer and/or between the aluminium gallium nitride alloy based material layer and the second type doping semiconductor layer of doped indium admixture, wherein the aluminium gallium nitride alloy based material layer of doped indium admixture and tunneling joint layer are the same sides that is positioned at luminescent layer.First electrode is arranged on the first type doping semiconductor layer, and second electrode is arranged on the second type doping semiconductor layer.
In addition, the present invention proposes a kind of light-emitting diode chip for backlight unit in addition, and it comprises substrate, the first type doping semiconductor layer, the second type doping semiconductor layer, luminescent layer, at least one unadulterated aluminium gallium nitride alloy based material layer (undoped Al
xGa
1-xN based material layer, 0≤x＜1), at least one tunneling joint layer, first electrode and second electrode.The first type doping semiconductor layer is arranged on the substrate, and the second type doping semiconductor layer is arranged at first type doping semiconductor layer top, and luminescent layer is arranged between the first type doping semiconductor layer and the second type doping semiconductor layer.Unadulterated aluminium gallium nitride alloy based material layer is arranged on one of them surface of luminescent layer, and tunneling joint layer is arranged between the unadulterated aluminium gallium nitride alloy based material layer and the first type doping semiconductor layer and/or between the unadulterated aluminium gallium nitride alloy based material layer and the second type doping semiconductor layer, wherein unadulterated aluminium gallium nitride alloy based material layer and tunneling joint layer are the same sides that is positioned at luminescent layer.First electrode is arranged on the first type doping semiconductor layer, and second electrode is arranged on the second type doping semiconductor layer.
The energy gap width of described tunneling joint layer can be greater than the energy gap width of luminescent layer.
Described tunneling joint layer comprises the first type aluminium gallium nitride alloy based material layer and the second type aluminium gallium nitride alloy based material layer, and wherein the second type aluminium gallium nitride alloy based material layer is arranged on the wherein surface of the first type aluminium gallium nitride alloy based material layer.
The described first type aluminium gallium nitride alloy based material layer can have silicon admixture, indium admixture or its combination, and the second type aluminium gallium nitride alloy based material layer can have magnesium admixture, indium admixture or its combination.
The aluminium gallium nitride alloy based material layer of described doped indium admixture/unadulterated aluminium gallium nitride alloy based material layer is arranged on the upper surface of luminescent layer, and the second type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer/unadulterated aluminium gallium nitride alloy based material layer and the first type aluminium gallium nitride alloy based material layer of doped indium admixture.
The aluminium gallium nitride alloy based material layer of described doped indium admixture/unadulterated aluminium gallium nitride alloy based material layer is arranged on the lower surface of luminescent layer, and the first type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer/unadulterated aluminium gallium nitride alloy based material layer and the second type aluminium gallium nitride alloy based material layer of doped indium admixture.
In addition, the described first type aluminium gallium nitride alloy based material layer also can have magnesium admixture, indium admixture or its combination, and the second type aluminium gallium nitride alloy based material layer can have silicon admixture, indium admixture or its combination.The aluminium gallium nitride alloy based material layer of described doped indium admixture/unadulterated aluminium gallium nitride alloy based material layer is arranged on the upper surface of luminescent layer, and the second type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer/unadulterated aluminium gallium nitride alloy based material layer and the first type aluminium gallium nitride alloy based material layer of doped indium admixture.The aluminium gallium nitride alloy based material layer of described doped indium admixture/unadulterated aluminium gallium nitride alloy based material layer is arranged on the lower surface of luminescent layer, and the first type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer/unadulterated aluminium gallium nitride alloy based material layer and the second type aluminium gallium nitride alloy based material layer of doped indium admixture.
The described first type doping semiconductor layer comprises resilient coating (buffer layer), crystallizing layer (nucleation layer) and the first type contact layer.Resilient coating is arranged on the substrate, and crystallizing layer is arranged on the resilient coating, and the first type contact layer is arranged on the crystallizing layer.
The described second type doping semiconductor layer comprises the second type contact layer.
Comprehensively above-mentioned, because tunneling joint layer can effectively reduce the pressure drop between the first/the second type doping semiconductor layer and the luminescent layer, therefore light-emitting diode of the present invention has lower operating voltage.In addition, the aluminium gallium nitride alloy based material layer of doped indium admixture can make light-emitting diode chip for backlight unit have more smooth surface, and unadulterated aluminium gallium nitride alloy based material layer can make light-emitting diode chip for backlight unit have lower leakage current.Therefore, above-mentioned good characteristic all effectively improves the quality of light-emitting diode chip for backlight unit of the present invention.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 1;
Fig. 2 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 2;
Fig. 3 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 3;
Fig. 4 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 4.
Description of reference numerals among the figure:
100,200,300,400 is light-emitting diode chip for backlight unit, and 110 is substrate,
120 is the first type doping semiconductor layer, and 122 is resilient coating, and 124 is crystallizing layer,
126 is the first type contact layer, and 130 is the second type doping semiconductor layer,
132 is the second type contact layer, and 140 is luminescent layer,
150,250 is the aluminium gallium nitride alloy based material layer of doped indium admixture,
160,260,360,460 is tunneling joint layer,
162,262,362,462 is the first type aluminium gallium nitride alloy based material layer,
164,264,364,464 is the second type aluminium gallium nitride alloy based material layer,
170 is first electrode, and 180 is second electrode.
Embodiment
Embodiment 1
Fig. 1 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 1.With reference to Fig. 1, light-emitting diode chip for backlight unit 100 of the present invention comprises aluminium gallium nitride alloy based material layer (the In doped Al of substrate 110, the first type doping semiconductor layer 120, the second type doping semiconductor layer 130, luminescent layer 140, doped indium admixture
xGa
1-xN based material layer, 0≤x＜1) 150, tunneling joint layer (tunneling junction layer) 160, first electrode 170 and second electrode 180.The first type doping semiconductor layer 120 is arranged on the substrate 110, and the second type doping semiconductor layer 130 is arranged at the first type doping semiconductor layer, 120 tops, and luminescent layer 140 is arranged between the first type doping semiconductor layer 120 and the second type doping semiconductor layer 130.In addition, first electrode 170 is arranged on the first type doping semiconductor layer 120, and second electrode 180 is arranged on the second type doping semiconductor layer 130.When passing to forward current by first electrode 170 and second electrode 180, electronics and hole can be passed to combination in the luminescent layer 140 via the first type doping semiconductor layer 120 and the second type doping semiconductor layer 130 respectively, and release energy and reach luminous effect with the form of light wave.
In the present embodiment, the aluminium gallium nitride alloy based material layer 150 of doped indium admixture is arranged on the upper surface of luminescent layer 140.Because the aluminium gallium nitride alloy based material layer 150 that the present invention is provided with the doped indium admixture to slow down the unmatched phenomenon of lattice between the second type doping semiconductor layer 130 and luminescent layer 140 materials, can reduce the stress that light-emitting diode chip for backlight unit 100 is delayed time outside and produced.Simultaneously, because the indium admixture has preferable surface migration energy (surface migration capability), therefore, light-emitting diode chip for backlight unit 100 can form more smooth surface.Specifically, because the atomic radius of phosphide atom is greater than the atomic radius of gallium atom, so the indium admixture can reduce the vague and general density (vacancy density) of nitrogen element, so that in the process of extension, improve the ratio of V/III, and improve the dislocation defects in the light-emitting diode chip for backlight unit 100.
Refer again to Fig. 1, in the present embodiment, tunneling joint layer 160 is arranged between the aluminium gallium nitride alloy based material layer 150 and the second type doping semiconductor layer 130 of doped indium admixture, so can reduce the pressure drop between the second type doping semiconductor layer 130 and the luminescent layer 140, thereby light-emitting diode chip for backlight unit of the present invention 100 has lower operating voltage.In addition, when the energy gap width of tunneling joint layer 160 during greater than the energy gap width of luminescent layer 140, light-emitting diode chip for backlight unit 100 has the preferable characteristics of luminescence.
From the above, tunneling joint layer 160 comprises the (Al of first type aluminium gallium nitride alloy system
xGa
1-xN, 0≤x＜1) material layer 162 and the (Al of second type aluminium gallium nitride alloy system
xGa
1-xN, 0≤x＜1) material layer 164.In the present embodiment, the second type aluminium gallium nitride alloy based material layer 164 is arranged between the aluminium gallium nitride alloy based material layer 150 and the first type aluminium gallium nitride alloy based material layer 162 of doped indium admixture.In addition, the first type aluminium gallium nitride alloy based material layer 162 can be n type aluminium gallium nitride alloy based material layer, and the second type aluminium gallium nitride alloy based material layer 164 can be p type aluminium gallium nitride alloy based material layer (so, the first type doping semiconductor layer 120 and 130 of the second type doping semiconductor layers are respectively n type aluminium gallium nitride alloy based material layer and p type aluminium gallium nitride alloy based material layer).
For further reducing the operating voltage of light-emitting diode chip for backlight unit 100, but the present invention's doped silicon admixture, indium admixture or its are combined in the first type aluminium gallium nitride alloy based material layer 162, also can magnesium-doped admixture, indium admixture or its be combined in the second type aluminium gallium nitride alloy based material layer 164.It should be noted that, particularly when simultaneously doped silicon admixture and indium admixture are in the first type aluminium gallium nitride alloy based material layer 162, and when magnesium-doped admixture and indium admixture were in the second type aluminium gallium nitride alloy based material layer 164 simultaneously, light-emitting diode chip for backlight unit 100 can have lower operating voltage.
In addition, aluminium gallium nitride alloy based material layer 150, the first type aluminium gallium nitride alloy based material layer 162 and the second type aluminium gallium nitride alloy based material layer 164 of the doped indium admixture in above-mentioned for example is with Metalorganic Chemical Vapor Deposition (Metal Organic Chemical Vapor Deposition, MOCVD) form, and its preferable thickness is between 0.5nm～20nm, and its preferable growth temperature is between 800 ℃～1200 ℃.
Below the material and the structure of substrate and each thin layer of light-emitting diode chip for backlight unit 100 are narrated in segmentation.
The material of substrate 110 comprises alumina single crystal (Sapphire), carborundum (6H-SiC or 4H-SiC), silicon (Si), zinc oxide (ZnO), GaAs (GaAs), spinelle (MgAl
2O
4) or other lattice constant approach the monocrystalline oxide of nitride-based semiconductor, and the material of substrate 110 to form form for example be C-Plane, E-Plane or A-Plane.
Refer again to Fig. 1, the first type doping semiconductor layer 120 comprises resilient coating 122, crystallizing layer 124 and the first type contact layer 126.Resilient coating 122 is arranged on the substrate 110, and it for example is by aluminum indium gallium nitride (Al
aGa
bIn
1-a-bN, 0≤a＜1,0≤b＜1, a+b≤1) constitute.Crystallizing layer 124 is arranged on the resilient coating 122, and the extension after its main function is to make it can be quicker, and the ordering of the lattice of extension is comparatively neat, and the first type contact layer 126 is arranged on the crystallizing layer 124.
From the above, the second type doping semiconductor layer 130 comprises the second type contact layer 132.In the present embodiment, the first type contact layer 126 is a n type contact layer, and the second type contact layer 132 is a p type contact layer, and aforesaid contact layer is that material is constituted by aluminium gallium nitride alloy for example, and by dopant ion dopant species and different its characteristics of adjusting of concentration.In addition, luminescent layer 140 for example is by InGaN (In
aGa
1-aN, 0≤a＜1) the multiple quantum trap structure that is constituted, and the indium gallium element by different proportion can make it send the light of different wave length.
Subsidiary one carry be, be the electrical characteristics of promoting light-emitting diode chip for backlight unit 100, the first type doping semiconductor layer 120 can also comprise that the first type coating (not shown) is arranged on the first type contact layer 126.The second type doping semiconductor layer 130 can also comprise that the second type coating (not shown) is arranged between the second type contact layer 132 and the luminescent layer 140.In addition, the tunneling joint layer 160 of present embodiment has the characteristic of coating simultaneously, and light-emitting diode chip for backlight unit 100 like this need not be provided with the second type coating and can have preferable electrical characteristics.
It should be noted that the present invention can be with unadulterated aluminium gallium nitride alloy based material layer (undoped, Al
xGa
1-xN based material layer, 0≤x＜1) with the aluminium gallium nitride alloy based material layer 150 of substitute doping indium admixture.So, then the present invention can significantly reduce the leakage phenomenon of light-emitting diode chip for backlight unit 100, so that it has preferable electrical characteristics.Subsidiary one what carry is that unadulterated aluminium gallium nitride alloy based material layer for example is to form with Metalorganic Chemical Vapor Deposition, and its preferable thickness is between 0.5nm～20nm, and its preferable growth temperature is between 800 ℃～1200 ℃.
In addition, the present invention do not limit the aluminium gallium nitride alloy based material layer 150 and the tunneling joint layer 160 of doped indium admixture can only be between the second type doping semiconductor layer 130 and luminescent layer 140.Below, will enumerate the light-emitting diode of other structure of other embodiment and conjunction with figs. explanation the present invention.
Embodiment 2
Fig. 2 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 2.With reference to Fig. 2, the light-emitting diode chip for backlight unit 200 of embodiment 2 is similar to the light-emitting diode chip for backlight unit 100 (as shown in Figure 1) of embodiment 1, and its difference is that the aluminium gallium nitride alloy based material layer 250 of doped indium admixture is different with the equipping position of tunneling joint layer 260.In the present embodiment, the aluminium gallium nitride alloy based material layer 250 of doped indium admixture is arranged on the lower surface of luminescent layer 140, and tunneling joint layer 260 is arranged between the aluminium gallium nitride alloy based material layer 250 and the first type doping semiconductor layer 120 of doped indium admixture.In addition, tunneling joint layer 260 comprises the first type aluminium gallium nitride alloy based material layer 262 and the second type aluminium gallium nitride alloy based material layer 264, and wherein the first type aluminium gallium nitride alloy based material layer 262 is arranged between the aluminium gallium nitride alloy based material layer 250 and the second type aluminium gallium nitride alloy based material layer 264 of doped indium admixture.
Similar aforementioned reason, the aluminium gallium nitride alloy based material layer 250 of doped indium admixture can slow down the unmatched phenomenon of lattice between the first type doping semiconductor layer 120 and luminescent layer 140 materials, so that light-emitting diode chip for backlight unit 200 forms more smooth surface.In addition, tunneling joint layer 260 can reduce the pressure drop between the first type doping semiconductor layer 120 and the luminescent layer 140, so that light-emitting diode chip for backlight unit 200 has lower operating voltage.Certainly, the aluminium gallium nitride alloy based material layer 250 of also available unadulterated aluminium gallium nitride alloy based material layer substitute doping indium admixture is so that light-emitting diode chip for backlight unit 200 has lower leakage current.Subsidiary one what carry is that the tunneling joint layer 260 of present embodiment also can replace the aforesaid first type coating simultaneously to promote the electrical characteristics of light-emitting diode chip for backlight unit 200 as coating.
It should be noted that the present invention does not limit the aluminium gallium nitride alloy based material layer of doped indium admixture and the quantity of tunneling joint layer.For example, the present invention can be in conjunction with the embodiments 1 and the light-emitting diode chip for backlight unit 100,200 of embodiment 2, so that the aluminium gallium nitride alloy based material layer of doped indium admixture and tunneling joint layer can be between the luminescent layer and first doping semiconductor layers, and between the luminescent layer and second doping semiconductor layer.The situation that the person of ordinary skill in the field can push away above-mentionedly voluntarily, no longer accompanying drawing is represented herein.
In addition, it is n type aluminium gallium nitride alloy based material layer that the present invention does not also limit the first type aluminium gallium nitride alloy based material layer, and the second type aluminium gallium nitride alloy based material layer is a p type aluminium gallium nitride alloy based material layer.Below, will enumerate the light-emitting diode of other form of other embodiment and conjunction with figs. explanation the present invention.
Embodiment 3, embodiment 4
Fig. 3 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 3, and Fig. 4 is the generalized section according to the light-emitting diode chip for backlight unit of embodiments of the invention 4.With reference to Fig. 3, the light-emitting diode chip for backlight unit 300 of embodiment 3 is similar to the light-emitting diode chip for backlight unit 100 (as shown in Figure 1) of embodiment 1, its difference is that the first type aluminium gallium nitride alloy based material layer 362 of tunneling joint layer 360 is p type aluminium gallium nitride alloy based material layer, and the second type aluminium gallium nitride alloy based material layer 364 is a n type aluminium gallium nitride alloy based material layer.With reference to Fig. 4, the light-emitting diode chip for backlight unit 400 of embodiment 4 is similar to the light-emitting diode chip for backlight unit 200 (as shown in Figure 2) of embodiment 2, its difference is that the first type aluminium gallium nitride alloy based material layer 462 of wearing grand knitting layer 460 is p type aluminium gallium nitride alloy based material layer, and the second type aluminium gallium nitride alloy based material layer 464 is a n type aluminium gallium nitride alloy based material layer.
From the above, simultaneously with reference to Fig. 3 and Fig. 4, in this two embodiment, the first type aluminium gallium nitride alloy based material layer can have magnesium admixture, indium admixture or its combination, and the second type aluminium gallium nitride alloy based material layer 364,464 can have silicon admixture, indium admixture or its combination.It should be noted that, particularly when simultaneously magnesium-doped admixture and indium admixture are in the first type aluminium gallium nitride alloy based material layer 362,462, and when doped silicon admixture and indium admixture were in the second type aluminium gallium nitride alloy based material layer 364,464 simultaneously, light-emitting diode chip for backlight unit 300,400 can have lower operating voltage.Certainly, in the form framework of this two embodiment, then 130 of the first type doping semiconductor layer 120 and the second type doping semiconductor layers need correspond to p type aluminium gallium nitride alloy based material layer and n type aluminium gallium nitride alloy based material layer respectively.
Subsidiary one what carry is that the present invention can plug with molten metal the aluminium gallium nitride alloy based material layer 150,250 (as shown in Figure 3, Figure 4) of admixture with unadulterated aluminium gallium nitride alloy based material layer substitute doping, so that light-emitting diode chip for backlight unit 200 has lower leakage current.In addition, the present invention can be in conjunction with the embodiments 3 and the light-emitting diode chip for backlight unit 300,400 of embodiment 4, so that the aluminium gallium nitride alloy based material layer of doped indium admixture and tunneling joint layer can be between the luminescent layer and first doping semiconductor layers, and between the luminescent layer and second doping semiconductor layer.The situation that the person of ordinary skill in the field can push away above-mentionedly voluntarily, no longer accompanying drawing is represented herein.
In the light-emitting diode chip for backlight unit 100,200,300,400 of the various embodiments described above (as Fig. 1, Fig. 2, Fig. 3, shown in Figure 4), aluminium gallium nitride alloy based material layer of doped indium admixture (or unadulterated aluminium gallium nitride alloy based material layer) and tunneling joint layer are between the luminescent layer and first doping semiconductor layer, or between the luminescent layer and second doping semiconductor layer.Yet the aluminium gallium nitride alloy based material layer (or unadulterated aluminium gallium nitride alloy based material layer) that the present invention does not limit the doped indium admixture can only be positioned at aforesaid two positions with tunneling joint layer.For example, it can also be between second electrode and the second type contact layer, or between the second type contact layer and the second type coating, or the position is so that light-emitting diode chip for backlight unit has preferable quality between the first type coating and the first type contact layer etc.
In sum, light-emitting diode chip for backlight unit of the present invention has following advantage at least:
One, because the aluminium gallium nitride alloy based material layer of doped indium admixture is set, can make light-emitting diode chip for backlight unit have more smooth surface, and improve the dislocation defects that light-emitting diode chip for backlight unit produces in outer time-delay;
Two, because unadulterated aluminium gallium nitride alloy based material layer is set, can reduce the leakage current of light-emitting diode chip for backlight unit, to improve its electrical characteristics;
Three, because tunneling joint layer can effectively reduce the pressure drop between the first/the second type doping semiconductor layer and the luminescent layer, so light-emitting diode chip for backlight unit has lower operating voltage;
Four, because the first type aluminium gallium nitride alloy based material layer simultaneously magnesium-doped admixture and indium admixture, and the second type aluminium gallium nitride alloy based material layer doped silicon admixture and indium admixture simultaneously, therefore can further reduce the operating voltage of light-emitting diode chip for backlight unit;
Five, tunneling joint layer has the characteristic of coating simultaneously, and light-emitting diode chip for backlight unit like this need not be provided with coating and can have preferable electrical characteristics.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (22)
1. light-emitting diode chip for backlight unit is characterized in that: comprising:
Substrate;
The first type doping semiconductor layer is arranged on this substrate;
The second type doping semiconductor layer is arranged at this first type doping semiconductor layer top;
Luminescent layer is arranged between this first type doping semiconductor layer and this second type doping semiconductor layer;
The aluminium gallium nitride alloy based material layer of at least one doped indium admixture is arranged on one of them surface of this luminescent layer;
At least one tunneling joint layer, be arranged between the aluminium gallium nitride alloy based material layer of this doped indium admixture and this first type doping semiconductor layer and/or between the aluminium gallium nitride alloy based material layer and this second type doping semiconductor layer of this doped indium admixture, wherein the aluminium gallium nitride alloy based material layer of this doped indium admixture and this tunneling joint layer are the same sides that is positioned at this luminescent layer;
First electrode is arranged on this first type doping semiconductor layer; And
Second electrode is arranged on this second type doping semiconductor layer.
2. light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the energy gap width of described tunneling joint layer is greater than the energy gap width of this luminescent layer.
3. light-emitting diode chip for backlight unit according to claim 1 is characterized in that: described tunneling joint layer comprises:
The first type aluminium gallium nitride alloy based material layer; And
The second type aluminium gallium nitride alloy based material layer is arranged on the wherein surface of this first type aluminium gallium nitride alloy based material layer.
4. light-emitting diode chip for backlight unit according to claim 3 is characterized in that: the described first type aluminium gallium nitride alloy based material layer has silicon admixture, indium admixture or its combination, and the second type aluminium gallium nitride alloy based material layer has magnesium admixture, indium admixture or its combination.
5. light-emitting diode chip for backlight unit according to claim 4, it is characterized in that: the aluminium gallium nitride alloy based material layer of described doped indium admixture is arranged on the upper surface of this luminescent layer, and this second type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer and this first type aluminium gallium nitride alloy based material layer of this doped indium admixture.
6. light-emitting diode chip for backlight unit according to claim 4, it is characterized in that: the aluminium gallium nitride alloy based material layer of described doped indium admixture is arranged on the lower surface of this luminescent layer, and this first type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer and this second type aluminium gallium nitride alloy based material layer of this doped indium admixture.
7. light-emitting diode chip for backlight unit according to claim 3 is characterized in that: the described first type aluminium gallium nitride alloy based material layer has magnesium admixture, indium admixture or its combination, and this second type aluminium gallium nitride alloy based material layer has silicon admixture, indium admixture or its combination.
8. light-emitting diode chip for backlight unit according to claim 7, it is characterized in that: the aluminium gallium nitride alloy based material layer of described doped indium admixture is arranged on the upper surface of this luminescent layer, and this second type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer and this first type aluminium gallium nitride alloy based material layer of this doped indium admixture.
9. light-emitting diode chip for backlight unit according to claim 7, it is characterized in that: the aluminium gallium nitride alloy based material layer of described doped indium admixture is arranged on the lower surface of this luminescent layer, and this first type aluminium gallium nitride alloy based material layer is arranged between the aluminium gallium nitride alloy based material layer and this second type aluminium gallium nitride alloy based material layer of this doped indium admixture.
10. light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the described first type doping semiconductor layer comprises:
Resilient coating is arranged on this substrate;
Crystallizing layer is arranged on this resilient coating; And
The first type contact layer is arranged on this crystallizing layer.
11. light-emitting diode chip for backlight unit according to claim 1 is characterized in that: the described second type doping semiconductor layer comprises the second type contact layer.
12. a light-emitting diode chip for backlight unit is characterized in that: comprising:
Substrate;
The first type doping semiconductor layer is arranged on this substrate;
The second type doping semiconductor layer is arranged at this first type doping semiconductor layer top;
Luminescent layer is arranged between this first type doping semiconductor layer and this second type doping semiconductor layer;
At least one unadulterated aluminium gallium nitride alloy based material layer is arranged on one of them surface of this luminescent layer;
At least one tunneling joint layer, be arranged between this unadulterated aluminium gallium nitride alloy based material layer and this first type doping semiconductor layer and/or between this unadulterated aluminium gallium nitride alloy based material layer and this second type doping semiconductor layer, wherein this unadulterated aluminium gallium nitride alloy based material layer and this tunneling joint layer are the same sides that is positioned at this luminescent layer;
First electrode is arranged on this first type doping semiconductor layer; And
Second electrode is arranged on this second type doping semiconductor layer.
13. light-emitting diode chip for backlight unit according to claim 12 is characterized in that: the energy gap width of described tunneling joint layer is greater than the energy gap width of this luminescent layer.
14. light-emitting diode chip for backlight unit according to claim 12 is characterized in that: described tunneling joint layer comprises:
The first type aluminium gallium nitride alloy based material layer; And
The second type aluminium gallium nitride alloy based material layer is arranged on the wherein surface of this first type aluminium gallium nitride alloy based material layer.
15. light-emitting diode chip for backlight unit according to claim 14 is characterized in that: the described first type aluminium gallium nitride alloy based material layer has silicon admixture, indium admixture or its combination, and the second type aluminium gallium nitride alloy based material layer has magnesium admixture, indium admixture or its combination.
16. light-emitting diode chip for backlight unit according to claim 15, it is characterized in that: described unadulterated aluminium gallium nitride alloy based material layer is arranged on the upper surface of this luminescent layer, and this second type aluminium gallium nitride alloy based material layer is arranged between this unadulterated aluminium gallium nitride alloy based material layer and this first type aluminium gallium nitride alloy based material layer.
17. light-emitting diode chip for backlight unit according to claim 15, it is characterized in that: described unadulterated aluminium gallium nitride alloy based material layer is arranged on the lower surface of this luminescent layer, and this first type aluminium gallium nitride alloy based material layer is arranged between this unadulterated aluminium gallium nitride alloy based material layer and this second type aluminium gallium nitride alloy based material layer.
18. light-emitting diode chip for backlight unit according to claim 14 is characterized in that: the described first type aluminium gallium nitride alloy based material layer has magnesium admixture, indium admixture or its combination, and this second type aluminium gallium nitride alloy based material layer has silicon admixture, indium admixture or its combination.
19. light-emitting diode chip for backlight unit according to claim 18, it is characterized in that: described unadulterated aluminium gallium nitride alloy based material layer is arranged on the upper surface of this luminescent layer, and this second type aluminium gallium nitride alloy based material layer is arranged between this unadulterated aluminium gallium nitride alloy based material layer and this first type aluminium gallium nitride alloy based material layer.
20. light-emitting diode chip for backlight unit according to claim 18, it is characterized in that: described unadulterated aluminium gallium nitride alloy based material layer is arranged on the lower surface of this luminescent layer, and this first type aluminium gallium nitride alloy based material layer is arranged between this unadulterated aluminium gallium nitride alloy based material layer and this second type aluminium gallium nitride alloy based material layer.
21. light-emitting diode chip for backlight unit according to claim 12 is characterized in that: the described first type doping semiconductor layer comprises:
Resilient coating is arranged on this substrate;
Crystallizing layer is arranged on this resilient coating; And
The first type contact layer is arranged on this crystallizing layer.
22. light-emitting diode chip for backlight unit according to claim 12 is characterized in that: the described second type doping semiconductor layer comprises the second type contact layer.
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| CN200910131545A CN101859839A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910131545A CN101859839A (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode (LED) chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134729A (en) * | 2013-05-03 | 2014-11-05 | 展晶科技(深圳)有限公司 | Luminous chip and manufacturing method thereof |
| CN109863609A (en) * | 2016-08-25 | 2019-06-07 | 亿光电子工业股份有限公司 | Nitride semiconductor device and its manufacturing method and applied encapsulating structure |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
| CN117253947A (en) * | 2023-11-20 | 2023-12-19 | 徐州立羽高科技有限责任公司 | Deep ultraviolet light-emitting epitaxial wafer and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956230A (en) * | 2005-10-27 | 2007-05-02 | 璨圆光电股份有限公司 | LED chip |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1956230A (en) * | 2005-10-27 | 2007-05-02 | 璨圆光电股份有限公司 | LED chip |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134729A (en) * | 2013-05-03 | 2014-11-05 | 展晶科技(深圳)有限公司 | Luminous chip and manufacturing method thereof |
| CN104134729B (en) * | 2013-05-03 | 2017-04-26 | 展晶科技(深圳)有限公司 | luminous chip and manufacturing method thereof |
| CN109863609A (en) * | 2016-08-25 | 2019-06-07 | 亿光电子工业股份有限公司 | Nitride semiconductor device and its manufacturing method and applied encapsulating structure |
| CN114583026A (en) * | 2022-05-05 | 2022-06-03 | 徐州立羽高科技有限责任公司 | Novel semiconductor deep ultraviolet light source structure |
| CN114583026B (en) * | 2022-05-05 | 2022-11-29 | 徐州立羽高科技有限责任公司 | Semiconductor deep ultraviolet light source structure |
| CN117253947A (en) * | 2023-11-20 | 2023-12-19 | 徐州立羽高科技有限责任公司 | Deep ultraviolet light-emitting epitaxial wafer and preparation method thereof |
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