CN117253947A - Deep ultraviolet light-emitting epitaxial wafer and preparation method thereof - Google Patents
Deep ultraviolet light-emitting epitaxial wafer and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 247
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 195
- 239000000463 material Substances 0.000 claims abstract description 84
- 230000005641 tunneling Effects 0.000 claims abstract description 67
- 239000013078 crystal Substances 0.000 claims abstract description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 51
- 229910002704 AlGaN Inorganic materials 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 28
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 abstract description 36
- 238000002347 injection Methods 0.000 abstract description 21
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 20
- 229910052582 BN Inorganic materials 0.000 description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 9
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- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
Abstract
The application provides a deep ultraviolet light-emitting epitaxial wafer and a preparation method thereof, and relates to the technical field of light-emitting semiconductors, wherein the deep ultraviolet light-emitting epitaxial wafer is used for reducing electron and hole injection potential barriers and promoting electron injection efficiency and hole injection efficiency by arranging a first tunneling junction below a first active layer, so that the overall quantum efficiency of the ultraviolet light-emitting semiconductor is increased. Comprising a layer of support material; the first tunneling junction is positioned above the supporting material layer, and comprises a first N-type aluminum gallium nitride layer, a first tunneling layer and a first P-type aluminum gallium nitride layer along the growth direction of the crystal direction; the first active layer is positioned above the first tunneling junction; and the second N-type aluminum gallium nitride layer is positioned above the first active layer.
Description
Technical Field
The application relates to the technical field of light-emitting semiconductors, in particular to a deep ultraviolet light-emitting epitaxial wafer and a preparation method thereof.
Background
Ultraviolet light emitting semiconductors with emission wavelengths in the range of 230-350 nanometers have broad application prospects, typical applications of which include surface disinfection, water purification, medical equipment and biochemistry, ultra-high density optical recording light sources, white light illumination, fluorescence analysis, sensing, zero emission vehicles, and other fields.
Through many years of intensive research, the development of ultraviolet light emitting semiconductors still has more difficulties and barriers; in particular, the quantum efficiency of the deep ultraviolet light emitting semiconductor with the emission wavelength less than 300 nanometers is still lower than that of the blue or green visible light emitting device. For example, a deep ultraviolet LED emitting less than 300 nanometers has only 1% EQE compared to an LED in the visible spectrum with an external quantum efficiency (EQE, ratio of extracted photons to injected electron-hole pairs) of greater than 50%. How to improve the quantum efficiency of ultraviolet light emitting semiconductors is an important issue to be solved in related researches.
Disclosure of Invention
In view of this, the present application provides a deep ultraviolet light emitting epitaxial wafer and a preparation method thereof, which are used for reducing electron and hole injection barriers and promoting electron injection efficiency and hole injection efficiency by arranging a first tunneling junction below a first active layer, so as to increase the overall quantum efficiency of an ultraviolet light emitting semiconductor.
The technical scheme adopted for solving the technical problems is as follows:
in a first aspect, the present application provides a deep ultraviolet light emitting epitaxial wafer, including:
a support material layer;
the first tunneling junction is positioned above the supporting material layer, wherein the first tunneling junction comprises a first N-type aluminum gallium nitride layer, a first tunneling layer and a first P-type aluminum gallium nitride layer along the growth direction of the crystal direction;
a first active layer located above the first tunneling junction;
and the second N-type aluminum gallium nitride layer is positioned above the first active layer.
In some embodiments of the present application, the deep ultraviolet aluminum gallium nitride epitaxial structure further includes a buffer layer, where the buffer layer is located between the support material layer and the first N-type aluminum gallium nitride layer.
In some embodiments of the present application, the thickness of the second N-type aluminum gallium nitride layer is smaller than the thickness of the first N-type aluminum gallium nitride layer.
In some embodiments of the present application, the deep ultraviolet aluminum gallium nitride epitaxial structure further includes a first aluminum gallium nitride layer, and the first aluminum gallium nitride layer is located between the first P-type aluminum gallium nitride layer and the first active layer.
In some embodiments of the present application, the second N-type aluminum gallium nitride layer top surface is further grown with at least one cascaded aluminum gallium nitride epitaxial structure along a growth direction from bottom to top, and the cascaded aluminum gallium nitride epitaxial structure includes:
a second P-type AlGaN layer, a second tunneling layer is grown between the second N-type AlGaN layer and the second P-type AlGaN layer, and the second N-type AlGaN layer, the second tunneling layer and the second P-type AlGaN layer form a second tunneling junction;
a second active layer;
and the thickness of the third N-type aluminum gallium nitride layer is smaller than that of the first N-type aluminum gallium nitride layer.
In some embodiments of the present application, the tandem aluminum gallium nitride epitaxial structure further includes a second aluminum gallium nitride layer, and the second aluminum gallium nitride layer is located between the second P-type aluminum gallium nitride layer and the second active layer.
In some embodiments of the present application, the first N-type aluminum gallium nitride layer has a thickness of 500 nm or more, and/or;
the thickness of the second N-type aluminum gallium nitride layer and the thickness of the third N-type aluminum gallium nitride layer are more than 10 nanometers and less than the thickness of the first N-type aluminum gallium nitride layer.
In some embodiments of the present application, the support material layer includes one of the following structural layers: a substrate, a base plate or a layer of a group iii-v compound material.
In some embodiments of the present application, the supporting material layer is a substrate, the substrate is a heterogeneous substrate or a homogeneous substrate, and the material of the substrate includes one of the following materials: sapphire, silicon wafer, aluminum nitride, gallium nitride, aluminum gallium nitride or silicon carbide.
In a second aspect, the present application provides a method for preparing a deep ultraviolet light-emitting epitaxial wafer, including:
growing a first N-type aluminum gallium nitride layer above the support material layer;
growing a first tunneling layer above the first N-type AlGaN layer;
growing a first P-type AlGaN layer above the first tunneling layer;
growing a first active layer above the first P-type AlGaN layer;
and growing a second N-type aluminum gallium nitride layer above the first active layer.
In summary, due to the adoption of the technical scheme, the application at least comprises the following beneficial effects:
according to the deep ultraviolet light-emitting epitaxial wafer and the preparation method thereof, on one hand, the first tunneling junction is arranged, so that the adoption of a traditional P-type gallium nitride material is avoided, the self-absorption of ultraviolet light emission in an epitaxial layer can be reduced, and the overall quantum efficiency of an ultraviolet light-emitting semiconductor is increased; on the other hand, by arranging the first tunneling junction at the bottom of the first active layer, a built-in electric field caused by the nitride polarization effect can be converted from an injection barrier to an overflow barrier, so that carriers such as electrons, holes and the like are not blocked by the injection barrier when being injected into the first active layer, the injection loss of the carriers is further reduced, the injection efficiency of the carriers is improved, meanwhile, the overflow barrier is utilized to prevent the carriers from overflowing, the injection loss of the carriers is further reduced, the injection efficiency of the carriers is improved, and the quantum efficiency of the ultraviolet light emitting semiconductor is effectively improved.
Drawings
For a clearer description of an embodiment of the present application, reference will be made to the accompanying drawings of embodiments, which, as will become apparent, relate only to some embodiments of the present application and are not limiting of the present application, wherein:
fig. 1 is a schematic structural diagram of a deep ultraviolet light-emitting epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a semiconductor structure with deep ultraviolet light emitting function according to the related art provided in the embodiments of the present application;
FIG. 3 is a schematic view of a portion of a light emitting region of the first tunneling layer of FIG. 2 according to an embodiment of the present application;
FIG. 4 is a schematic view of a portion of a light emitting region of the first tunneling layer of FIG. 1 according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a deep ultraviolet light-emitting epitaxial wafer according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of a third structure of a deep ultraviolet light-emitting epitaxial wafer according to an embodiment of the present disclosure;
fig. 7 is a schematic flow chart of a preparation method of a deep ultraviolet light-emitting epitaxial wafer according to an embodiment of the present application.
The description of the drawings is as follows:
1. a support material layer; 2. a buffer layer; 3. a first N-type aluminum gallium nitride layer; 4. a first tunneling layer; 5. a first P-type aluminum gallium nitride layer; 6. a first active layer; 7. a second N-type aluminum gallium nitride layer; 8. a first aluminum gallium nitride layer; 9. a second tunneling layer; 10. a second P-type aluminum gallium nitride layer; 11. a second active layer; 12. a third N-type aluminum gallium nitride layer; 13. a second aluminum gallium nitride layer; A. a first tunneling junction; B. and a second tunneling junction.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. Based on the embodiments herein, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of the present application.
In the description of the present application, it should be understood that the words "first" and "second" are used for descriptive purposes only and are not to be interpreted as indicating or implying a relative importance or number of features in which such is indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In this application, the term "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as exemplary is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the application. In the following description, details are set forth for purposes of explanation. It will be apparent to one of ordinary skill in the art that the present application may be practiced without these specific details. In other instances, well-known structures and processes have not been shown in detail to avoid obscuring the description of the present application with unnecessary detail. Thus, the present application is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles disclosed herein.
Fig. 2 is a schematic structural diagram of a semiconductor structure with deep ultraviolet light emitting function according to the related art provided in the embodiments of the present application. Referring to fig. 2, there is a related art ultraviolet light emitting semiconductor employing an N-P-N type top tunneling structure, which can effectively avoid the absorption of ultraviolet light by conventional P-type gallium nitride in the P-N structure of the ultraviolet semiconductor, that is, employing N-type aluminum gallium nitride (whose aluminum component is high enough such that its energy band width is substantially transparent to ultraviolet light from the active layer) and a very thin N-type or undoped gallium nitride (5 nm and below), and a P-type aluminum gallium nitride (whose aluminum component is high enough such that its energy band width is substantially transparent to ultraviolet light from the active layer) carrier injection structure based on tunneling effect.
However, the limitations of conventional uv-emitting semiconductors are still faced by such N-P-N top tunneling structure uv-emitting semiconductors. For example, when electrons of the N-type layer are injected into the active region, a built-in electric field due to the polarization effect of the nitride often causes the electrons to face a barrier when being injected into the active region, and thus the electron injection efficiency is reduced. At the same time, holes of the P-type layer are injected into the active region and a potential barrier is also faced to block holes from entering the active region.
For example, the semiconductor structure is used in a deep ultraviolet light emitting device or used in sterilization equipment, and the deep ultraviolet light emitting device of an ultraviolet light emitting semiconductor with an N-P-N type top tunneling structure is used for generating a built-in electric field due to a nitride polarization effect, so that electrons and holes are blocked by a barrier when being injected into an active region to generate larger consumption, the luminous efficiency of the deep ultraviolet light emitting device or the sterilization equipment is not high enough, and the working energy efficiency of the subsequent deep ultraviolet light emitting device or the sterilization equipment is affected.
Based on the above semiconductor structure, please refer to fig. 1, fig. 1 is a schematic structural diagram of a deep ultraviolet light-emitting epitaxial wafer provided in an embodiment of the present application, and the present application provides a deep ultraviolet light-emitting epitaxial wafer, where a light-emitting band of the deep ultraviolet light-emitting epitaxial wafer is between 255 nm and 340 nm, including:
the material of the support material layer 1 may be a substrate or a base plate.
The first tunneling junction A is located above the supporting material layer 1, wherein the first tunneling junction A comprises a first N-type AlGaN layer 3, a first tunneling layer 4 and a first P-type AlGaN layer 5 along the growth direction of the crystal direction.
It should be noted that, the material of the first N-type aluminum gallium nitride layer 3 may be an aluminum gallium nitride epitaxial layer doped with a silicon element, the aluminum-containing component of the first N-type aluminum gallium nitride layer 3 is higher than 10%, the thickness of the first N-type aluminum gallium nitride layer 3 is not lower than 100 nm, the energy band width of the first tunneling layer 4 is smaller than the energy band widths of the first P-type aluminum gallium nitride layer 5 and the first N-type aluminum gallium nitride layer 3, and the first P-type aluminum gallium nitride layer 5 may be an aluminum gallium nitride epitaxial layer doped with a magnesium element, and the aluminum-containing component thereof is higher than 10%.
Note that the material of the first tunneling layer 4 includes, but is not limited to, undoped intrinsic gallium nitride, N-type gallium nitride, P-type gallium nitride, and NP-type co-doped gallium nitride. The semiconductor forbidden band width of undoped intrinsic indium gallium nitride, N-type indium gallium nitride, P-type indium gallium nitride, NP-type co-doped indium gallium nitride, undoped intrinsic indium nitride, N-type indium nitride, P-type indium nitride, NP-type co-doped indium nitride and the like is smaller than that of the N-type aluminum gallium nitride layer and the P-type aluminum gallium nitride layer in the aluminum gallium nitride epitaxial structure.
A first active layer 6, said first active layer 6 being located above said first tunneling junction a.
Note that, the light emission band of the first active layer 6 is between 235 nm and 355 nm, and the structure adopted by the first active layer 6 includes, but is not limited to: and quantum wells, quantum dots, quantum discs and other structures formed by epitaxial layers of gallium nitride, aluminum nitride and the like.
The second N-type aluminum gallium nitride layer 7, the second N-type aluminum gallium nitride layer 7 is located above the first active layer 6, and it should be noted that the topmost structure of the second N-type aluminum gallium nitride layer 7 may be, but is not limited to, a photonic crystal, a nanowire, or other structures, so as to achieve the effect of increasing the top light extraction efficiency.
Fig. 3 is a schematic view of a portion of a light emitting region of the tunneling layer of fig. 2 according to an embodiment of the present application. Referring to fig. 2 and 3, when the tunneling layer is located on the top and the N-type aluminum gallium nitride layer is located on one side of the supporting material layer (substrate), and then the active layer and the P-type aluminum gallium nitride layer are grown along the growth crystal direction, electrons are injected into the active layer from the bottom N-type aluminum gallium nitride layer, a potential barrier is formed on the active layer side close to the N-type aluminum gallium nitride layer due to the unique spontaneous polarization effect of nitride, and a blocking effect is generated on the electron injection, thereby reducing the electron injection efficiency and the working energy efficiency of the aluminum gallium nitride epitaxial structure. Meanwhile, in the interface area of the active layer and the P-type AlGaN layer, under the forward bias working condition of the AlGaN epitaxial structure, a sufficient potential barrier cannot be formed at the interface area to block electron overflow, and the electron injection efficiency is further reduced. Meanwhile, holes injected into the active layer from the P-type AlGaN layer also suffer from similar problems, namely the formation of a hole injection barrier and hole overflow effect, and the working energy efficiency of the AlGaN epitaxial layer is reduced.
In order to solve this problem, referring to fig. 4, fig. 4 is a schematic view of a portion of a light emitting region of the first tunneling layer 4 in fig. 1 provided in the embodiment of the present application, in which the first tunneling layer is disposed on one side of the supporting material layer 1 (a substrate is used in the embodiment of the present application), and the first active layer 6 is disposed above the first tunneling layer 4 (along a growth crystal direction), then, as shown in fig. 4, when the first tunneling layer 4 is disposed at the bottom, and the first N-type aluminum gallium nitride layer 3 is disposed near the substrate side, the first tunneling layer 4 and the first P-type aluminum gallium nitride layer 5 are grown next along the growth crystal direction, and then, when the first active layer 6 and the second N-type aluminum gallium nitride layer 7 are grown on the first P-type aluminum gallium nitride layer 5, electrons are injected into the first active layer 6 from the top second N-type aluminum gallium nitride layer 7, no more potential barrier is formed at the interface between the first N-type aluminum gallium nitride layer 3 and the first active layer 6, but the first active layer 6 is near the first P-type aluminum gallium nitride layer 5, so that electron leakage can be prevented from being generated, and the electron carrier leakage can be reduced, and the epitaxial structure can be obtained. Meanwhile, holes injected from the first P-type AlGaN layer 5 can be similarly improved, namely, the holes do not encounter injection potential barriers any more, meanwhile, blocking potential barriers are formed for hole overflow, holes with higher concentration are obtained, and the working energy efficiency of the AlGaN epitaxial structure is improved.
The beneficial effects of this application: according to the embodiment of the application, the first tunneling junction A is arranged in the AlGaN epitaxial structure, the conventional P-type GaN material is avoided, so that self-absorption of ultraviolet light emission inside an epitaxial layer is reduced, the overall quantum efficiency of an ultraviolet light emitting semiconductor is increased, in addition, the first tunneling junction A is further migrated from the top of the AlGaN epitaxial layer to the bottom of the AlGaN epitaxial layer, namely, the first tunneling junction A is arranged at the top of the first active layer 6 and is converted into the first tunneling junction A arranged at the bottom of the first active layer 6, the built-in electric field caused by the polarization effect of the nitride is facilitated to be reversed, barrier blocking of electrons and holes in the active region (namely, the first active layer 6 in the embodiment of the application) is eliminated, loss and overflow effect of carriers (electrons and holes) injected into the first active layer 6 are reduced, better electron injection efficiency and hole injection efficiency are obtained, and improvement of light emitting efficiency caused by the first tunneling junction A is maintained, and accordingly the working energy efficiency (namely, the light output value of the ultraviolet light emitting semiconductor is remarkably improved.
The deep ultraviolet aluminum gallium nitride epitaxial structure in this embodiment is merely exemplary, and other functional layers or auxiliary layers may be further included between the above layers to improve the performance of the light emitting semiconductor device, or some layers may be omitted to simplify the structure, and in other embodiments of the present disclosure, other forms of epitaxial structure may be possible, provided that the deep ultraviolet aluminum gallium nitride epitaxial structure includes a first tunnel junction a and a first active layer 6, and the form in which the first active layer 6 is located above the first tunnel junction a is within the scope of the present disclosure.
In some embodiments of the present application, referring to fig. 1, the deep ultraviolet aluminum gallium nitride epitaxial structure further includes a buffer layer 2, where the buffer layer 2 is located between the support material layer 1 and the first N-type aluminum gallium nitride layer 3.
It should be noted that the material of the buffer layer 2 may be one of the following materials: the buffer layer 2 may be made of aluminum nitride, aluminum gallium nitride, boron nitride, or the like, and may be made of a single crystal material or a polycrystalline material.
In some embodiments of the present application, referring to fig. 5, fig. 5 is a schematic structural diagram of a deep ultraviolet light emitting epitaxial wafer provided in an embodiment of the present application, where the thickness of the second N-type aluminum gallium nitride layer 7 is smaller than that of the first N-type aluminum gallium nitride layer 3.
Because the thickness of the second N-type AlGaN layer 7 is smaller than that of the first N-type AlGaN layer 3, deep ultraviolet light can be emitted from a specific optical structure at the top of the second N-type AlGaN layer 7, and meanwhile, the stress born by the second N-type AlGaN layer 7 is reasonably controlled without causing cracks on an epitaxial wafer, so that the light extraction rate of a light-emitting semiconductor can be improved.
In some embodiments of the present application, referring to fig. 5, the deep ultraviolet aluminum gallium nitride epitaxial structure further includes a first aluminum gallium nitride layer 8, where the first aluminum gallium nitride layer 8 is located between the first P-type aluminum gallium nitride layer 5 and the first active layer 6.
It should be noted that the material of the first aluminum gallium nitride layer 8 may be undoped intrinsic aluminum gallium nitride, and N-type and P-type co-doped aluminum gallium nitride. Undoped intrinsic aluminum nitride, N-type and P-type co-doped aluminum nitride. The semiconductor forbidden band width of undoped intrinsic boron nitride, N-type and P-type co-doped boron nitride and the like is higher than that of the nitride material of the aluminum component of the light-emitting area of the quantum well, the quantum dot or the quantum disk of the first active layer 6.
Because the potential barrier of the undoped first aluminum gallium nitride layer 8 is higher, two-dimensional hole gas can be formed between the first P-type aluminum gallium nitride layer 5 and the undoped first aluminum gallium nitride layer 8, and a good spreading effect can be achieved on holes. The present application can improve the light emitting efficiency of the light emitting semiconductor by growing the first AlGaN layer 8 between the first P-type AlGaN layer 5 and the first active layer 6.
In some embodiments of the present application, referring to fig. 6, fig. 6 is a schematic diagram of a third structure of the deep ultraviolet light emitting epitaxial wafer provided in the embodiments of the present application, at least one cascaded aluminum gallium nitride epitaxial structure is further grown on the top surface of the second N-type aluminum gallium nitride layer 7 along the growth direction from bottom to top, and the cascaded aluminum gallium nitride epitaxial structure includes:
a second tunneling layer 9 is grown between the second P-type aluminum gallium nitride layer 10 and the second N-type aluminum gallium nitride layer 7, the second tunneling layer 9 and the second P-type aluminum gallium nitride layer 10 form a second tunneling junction B.
A second active layer 11.
The third N-type aluminum gallium nitride layer 12, the thickness of the third N-type aluminum gallium nitride layer 12 is smaller than the thickness of the first N-type aluminum gallium nitride layer 3.
According to the method, at least one cascading aluminum gallium nitride epitaxial structure grows on the top surface of the second N-type aluminum gallium nitride layer 7 along the growth direction (crystal orientation) from bottom to top, each cascading aluminum gallium nitride epitaxial structure comprises a second P-type aluminum gallium nitride layer 10, a second active layer 11 and a third N-type aluminum gallium nitride layer 12 which are sequentially stacked, a plurality of cascading aluminum gallium nitride epitaxial structures are sequentially stacked, carriers injected into the active layer can be fully compounded, the composite efficiency of electrons and holes in the active layer is improved, and the luminous efficiency of a luminous semiconductor is further improved.
In some embodiments of the present application, referring to fig. 6, the tandem aluminum gallium nitride epitaxial structure further includes a second aluminum gallium nitride layer 13, where the second aluminum gallium nitride layer 13 is located between the second P-type aluminum gallium nitride layer 10 and the second active layer 11.
Because the barrier of the undoped second aluminum gallium nitride layer 13 is higher, two-dimensional hole gas can be formed between the second P-type aluminum gallium nitride layer 10 and the undoped second aluminum gallium nitride layer 13, and a good spreading effect can be achieved on holes. According to the embodiment of the application, the second AlGaN layer 13 is additionally arranged between the second P-type AlGaN layer 10 and the second active layer 11, so that the luminous efficiency of the luminous semiconductor can be improved.
In some embodiments of the present application, the first N-type aluminum gallium nitride layer 3 has a thickness of 500 nm or more, and/or. The thickness of the second N-type aluminum gallium nitride layer 7 and the thickness of the third N-type aluminum gallium nitride layer 12 are greater than 10 nanometers and less than the thickness of the first N-type aluminum gallium nitride layer 3.
According to the method, the thickness of the second N-type aluminum gallium nitride layer 7 and the thickness of the third N-type aluminum gallium nitride layer 12 are set to be smaller than the thickness of the first N-type aluminum gallium nitride layer 3, deep ultraviolet light can be emitted from a top specific optical structure of the third N-type aluminum gallium nitride layer 12, and meanwhile, the stress born by the third N-type aluminum gallium nitride layer 12 is reasonably controlled without causing cracks in an epitaxial wafer, so that the luminous efficiency of a luminous semiconductor is improved.
In some embodiments of the present application, the support material layer 1 comprises one of the following structural layers: a substrate, a base plate or a layer of a group iii-v compound material.
The support material layer 1 in the embodiment of the present application may be a substrate, a base plate, or a material layer of a group iii-v compound.
In some embodiments of the present application, the supporting material layer 1 is a substrate, the substrate is a heterogeneous substrate or a homogeneous substrate, and the material of the substrate includes one of the following materials: sapphire, silicon wafer, aluminum nitride, gallium nitride, aluminum gallium nitride or silicon carbide.
Since sapphire has good light transmittance, sapphire is optimally used as the substrate in the embodiment of the application.
Referring to fig. 7, fig. 7 is a schematic flow chart of a preparation method of a deep ultraviolet light-emitting epitaxial wafer provided in an embodiment of the present application, and the present application further provides a preparation method of a deep ultraviolet light-emitting epitaxial wafer, which includes steps S1 to S5.
And step S1, growing a first N-type aluminum gallium nitride layer 3 above the support material layer 1.
The buffer layer 2 may be grown over the first N-type aluminum gallium nitride layer 3, or the remaining layer structure of the epitaxial layer may be grown directly over the first N-type aluminum gallium nitride layer 3.
Step S2, a first tunneling layer 4 is grown above the first N-type AlGaN layer 3.
Step S3, a first P type AlGaN layer 5 is grown above the first tunneling layer 4.
It should be noted that the first N-type aluminum gallium nitride layer 3, the first tunneling layer 4 and the first P-type aluminum gallium nitride layer 5 form a first tunneling junction a.
And step S4, growing a first active layer 6 above the first P-type AlGaN layer 5.
It should be noted that, the first active layer 6 is grown above the first P-type aluminum gallium nitride layer 5, and in the process of growing the first quantum well of the first active layer 6, one of the following methods may be adopted: molecular beam epitaxy, plasma assisted molecular beam epitaxy, electron cyclotron resonance molecular beam epitaxy, gas source molecular beam epitaxy, metal organic chemical vapor deposition or atomic layer deposition.
And step S5, growing a second N-type AlGaN layer 7 above the first active layer 6.
It should be noted that, growing the second N-type aluminum gallium nitride layer 7 above the first active layer 6 includes roughening treatment on the surface of the second N-type aluminum gallium nitride layer 7, where the roughening treatment includes one of the following methods: through the roughening treatment, the surface of the second N-type aluminum gallium nitride layer 7 is damaged by ultraviolet light to perform waveguide transmission on the layer so as to improve the light extraction efficiency, and the roughening structure comprises but is not limited to the following three types: 1. a distribution of pyramid-shaped three-dimensional geometries is formed. 2. A distribution of discontinuous surface structures of a two-dimensional plane perpendicular to the epitaxial growth direction is formed. 3. A distribution of three-dimensional geometries similar to photonic crystals and nanowires is formed.
Here, several application examples of the deep ultraviolet light emitting epitaxial wafer provided in the embodiments of the present application are briefly described.
First embodiment
In a first exemplary embodiment of the present disclosure, a deep ultraviolet light emitting epitaxial wafer is provided, as shown in fig. 1, and the deep ultraviolet epitaxial structure disclosed in the present application, which adopts an aluminum gallium nitride material system, has a light emitting band between 255 nm and 340 nm, and includes, along a crystal direction growth direction:
a substrate, wherein the substrate material includes, but is not limited to: sapphire, silicon wafer, aluminum nitride, gallium nitride, aluminum gallium nitride, silicon carbide and the like.
The material of the buffer layer 2 may be aluminum nitride, aluminum gallium nitride, boron nitride, or the like, and may be a single crystal material or a polycrystalline material.
The first N-type aluminum gallium nitride layer 3, wherein the material of the first N-type aluminum gallium nitride layer 3 may be an aluminum gallium nitride epitaxial layer doped with silicon element, and the aluminum-containing component is higher than 10%.
First tunneling layer 4, wherein the material of first tunneling layer 4 may be undoped intrinsic gallium nitride, N-type gallium nitride, P-type gallium nitride, NP-type co-doped gallium nitride. Undoped intrinsic InGaN, N-type InGaN, P-type InGaN, NP-type co-doped InGaN. The semiconductor forbidden band width of undoped intrinsic indium nitride, N-type indium nitride, P-type indium nitride, N-type and P-type co-doped indium nitride and the like is smaller than that of the material of the first N-type layer aluminum gallium nitride.
The material of the first P-type aluminum gallium nitride layer 5 may be an aluminum gallium nitride epitaxial layer doped with magnesium element, and the aluminum-containing component of the first P-type aluminum gallium nitride layer 5 is higher than 10%.
The material of the first active layer 6 may be a quantum well, a quantum dot, a quantum disk, or the like formed by an epitaxial layer of gallium nitride, aluminum nitride, or the like.
And a second N-type AlGaN layer 7, wherein the thickness of the second N-type AlGaN layer 7 is not less than 50 nm.
Second embodiment
In a first exemplary embodiment of the present disclosure, a deep ultraviolet light emitting epitaxial wafer is provided, and referring to fig. 5, a deep ultraviolet epitaxial structure based on an aluminum gallium nitride material system is disclosed, wherein a light emitting band is between 255 nm and 340 nm, and the deep ultraviolet light emitting epitaxial wafer includes, along a crystal direction growth direction:
a substrate, wherein the substrate material includes, but is not limited to: sapphire, silicon wafer, aluminum nitride, gallium nitride, aluminum gallium nitride, silicon carbide and the like.
The material of the buffer layer 2 may be aluminum nitride, aluminum gallium nitride, boron nitride, or the like, and may be a single crystal material or a polycrystalline material.
The first N-type aluminum gallium nitride layer 3, wherein the material of the first N-type aluminum gallium nitride layer 3 may be an aluminum gallium nitride epitaxial layer doped with silicon element, and the aluminum-containing component is higher than 10%.
First tunneling layer 4, wherein the material of first tunneling layer 4 may be undoped intrinsic gallium nitride, N-type gallium nitride, P-type gallium nitride, NP-type co-doped gallium nitride. Undoped intrinsic InGaN, N-type InGaN, P-type InGaN, NP-type co-doped InGaN. The semiconductor forbidden band width of undoped intrinsic indium nitride, N-type indium nitride, P-type indium nitride, N-type and P-type co-doped indium nitride and the like is smaller than that of the material of the first N-type layer aluminum gallium nitride.
The material of the first P-type aluminum gallium nitride layer 5 may be an aluminum gallium nitride epitaxial layer doped with magnesium element, and the aluminum-containing component of the first P-type aluminum gallium nitride layer 5 is higher than 10%.
The first aluminum gallium nitride layer 8, wherein the material of the first aluminum gallium nitride layer 8 may be: undoped intrinsic aluminum gallium nitride, N-type and P-type co-doped aluminum gallium nitride; undoped intrinsic aluminum nitride, N-type and P-type co-doped aluminum nitride; the semiconductor forbidden band width of undoped intrinsic boron nitride, N-type and P-type co-doped boron nitride and the like is higher than that of the nitride material of the aluminum component of the light-emitting area of the quantum well, the quantum dot or the quantum disk of the first active layer.
And the material of the first active layer can be a quantum well, a quantum dot, a quantum disk and other structures formed by epitaxial layers such as gallium nitride, aluminum nitride and the like.
And a second N-type AlGaN layer 7, wherein the thickness of the second N-type AlGaN layer 7 is not less than 50 nanometers, and the thickness of the second N-type AlGaN layer 7 is lower than that of the first N-type AlGaN layer 3.
Third embodiment
In a first exemplary embodiment of the present disclosure, a deep ultraviolet light emitting epitaxial wafer is provided, and referring to fig. 6, a deep ultraviolet epitaxial structure using an aluminum gallium nitride material system is disclosed, wherein a light emitting band is between 255 nm and 340 nm, and the deep ultraviolet light emitting epitaxial wafer includes, along a crystal direction growth direction:
a substrate, wherein the substrate material includes, but is not limited to: sapphire, silicon wafer, aluminum nitride, gallium nitride, aluminum gallium nitride, silicon carbide and the like.
The material of the buffer layer 2 may be aluminum nitride, aluminum gallium nitride, boron nitride, or the like, and may be a single crystal material or a polycrystalline material.
The first N-type aluminum gallium nitride layer 3, wherein the material of the first N-type aluminum gallium nitride layer 3 may be an aluminum gallium nitride epitaxial layer doped with silicon element, and the aluminum-containing component is higher than 10%.
The material of the first tunneling layer 4 may be undoped intrinsic gallium nitride, N-type gallium nitride, P-type gallium nitride, NP-type co-doped gallium nitride, undoped intrinsic indium gallium nitride, N-type indium gallium nitride, P-type indium gallium nitride, NP-type co-doped indium gallium nitride, undoped intrinsic indium nitride, N-type indium nitride, P-type indium nitride, N-type and P-type co-doped indium nitride, which has a semiconductor forbidden band width smaller than that of the first N-type layer aluminum gallium nitride layer 3.
The material of the first P-type aluminum gallium nitride layer 5 may be an aluminum gallium nitride epitaxial layer doped with magnesium element, and the aluminum-containing component of the first P-type aluminum gallium nitride layer 5 is higher than 10%.
The first aluminum gallium nitride layer 8, wherein the material of the first aluminum gallium nitride layer 8 may be: the semiconductor energy gap width of undoped intrinsic aluminum gallium nitride, N-type and P-type co-doped aluminum gallium nitride, undoped intrinsic aluminum nitride, N-type and P-type co-doped aluminum nitride, undoped intrinsic boron nitride, N-type and P-type co-doped boron nitride and the like is higher than that of the nitride material of the aluminum component of the light emitting area of the quantum well, the quantum dot or the quantum disk of the first active layer 6.
The material of the first active layer 6 may be a quantum well, a quantum dot, a quantum disk, or the like formed by an epitaxial layer of gallium nitride, aluminum nitride, or the like.
And a second N-type AlGaN layer 7, wherein the thickness of the second N-type AlGaN layer 7 is not less than 10 nanometers, and the thickness of the second N-type AlGaN layer 7 is less than the thickness of the first N-type AlGaN layer 3.
And a second tunneling layer 9, where the material of the second tunneling layer 9 may be undoped intrinsic gallium nitride, n-type gallium nitride, p-type gallium nitride, np-type co-doped gallium nitride, undoped intrinsic indium gallium nitride, n-type indium gallium nitride, p-type indium gallium nitride, np-type co-doped indium gallium nitride, undoped intrinsic indium nitride, n-type indium nitride, p-type indium nitride, n-type and p-type co-doped indium nitride, and the semiconductor bandgap width is smaller than that of the second n-type layer aluminum gallium nitride.
The second P-type aluminum gallium nitride layer 10, wherein the material of the second P-type aluminum gallium nitride layer 10 may be an aluminum gallium nitride epitaxial layer doped with magnesium element, and the aluminum-containing component is higher than 10%.
And a second aluminum gallium nitride layer 13, wherein the material of the second aluminum gallium nitride layer 13 may be undoped intrinsic aluminum gallium nitride, n-type and p-type co-doped aluminum gallium nitride, undoped intrinsic aluminum nitride, n-type and p-type co-doped aluminum nitride, undoped intrinsic boron nitride, n-type and p-type co-doped boron nitride, and the like, which has a semiconductor forbidden band width higher than that of the nitride material of the aluminum component of the light emitting region of the quantum well, quantum dot or quantum disk of the second active layer 11.
And a second active layer 11, wherein the second active layer 11 may be a quantum well, a quantum dot, a quantum disk, or the like formed by epitaxial layers of gallium nitride, aluminum nitride, or the like.
And a third N-type aluminum gallium nitride layer 12, wherein the thickness of the third N-type aluminum gallium nitride layer 12 is lower than that of the first N-type aluminum gallium nitride layer 3.
While the basic concepts have been described above, it will be apparent to those skilled in the art that the foregoing detailed disclosure is by way of example only and is not intended to be limiting. Although not explicitly described herein, various modifications, improvements, and adaptations of the present application may occur to one skilled in the art. Such modifications, improvements, and modifications are intended to be suggested within this application, and are therefore within the spirit and scope of the exemplary embodiments of this application.
Meanwhile, the present application uses specific words to describe embodiments of the present application. Reference to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic is associated with at least one embodiment of the present application. Thus, it should be emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various positions in this specification are not necessarily referring to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of the present application may be combined as suitable.
Likewise, it should be noted that in order to simplify the presentation disclosed herein and thereby aid in understanding one or more application embodiments, various features are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure. This method of disclosure, however, is not intended to imply that more features than are presented in the claims are required for the subject application. Indeed, less than all of the features of a single embodiment disclosed above.
For each patent, patent application publication, and other material, such as articles, books, specifications, publications, documents, etc., cited in this application, the entire contents of which are hereby incorporated by reference into this application, except for the application history documents which are inconsistent or conflict with the contents of this application, and for documents which have limited the broadest scope of the claims of this application (currently or hereafter attached to this application). It is noted that the descriptions, definitions, and/or terms used in the subject matter of this application are subject to the use of descriptions, definitions, and/or terms in case of inconsistent or conflicting disclosure.
Claims (10)
1. The deep ultraviolet light-emitting epitaxial wafer is characterized by comprising:
a support material layer (1);
the first tunneling junction (A) is positioned above the supporting material layer (1), wherein the first tunneling junction (A) comprises a first N-type aluminum gallium nitride layer (3), a first tunneling layer (4) and a first P-type aluminum gallium nitride layer (5) along the growth direction of the crystal direction;
-a first active layer (6), the first active layer (6) being located above the first tunnel junction (a);
and the second N-type aluminum gallium nitride layer (7), wherein the second N-type aluminum gallium nitride layer (7) is positioned above the first active layer (6).
2. Epitaxial wafer according to claim 1, characterized in that the deep ultraviolet aluminum gallium nitride epitaxial structure further comprises a buffer layer (2), the buffer layer (2) being located between the support material layer (1) and the first N-type aluminum gallium nitride layer (3).
3. Epitaxial wafer according to claim 1, characterized in that the thickness of the second N-type aluminum gallium nitride layer (7) is smaller than the thickness of the first N-type aluminum gallium nitride layer (3).
4. An epitaxial wafer according to claim 3, characterized in that the deep ultraviolet aluminium gallium nitride epitaxial structure further comprises a first aluminium gallium nitride layer (8), the first aluminium gallium nitride layer (8) being located between the first P-type aluminium gallium nitride layer (5) and the first active layer (6).
5. An epitaxial wafer according to claim 3, wherein the top surface of the second N-type aluminum gallium nitride layer (7) is further grown with at least one cascaded aluminum gallium nitride epitaxial structure along the direction of growth of the support material layer (1) towards the top surface of the epitaxial layer, the cascaded aluminum gallium nitride epitaxial structure comprising:
a second P-type AlGaN layer (10), a second tunneling layer (9) is grown between the second N-type AlGaN layer (7) and the second P-type AlGaN layer (10), and the second tunneling layer (7), the second tunneling layer (9) and the second P-type AlGaN layer (10) form a second tunneling junction (B);
a second active layer (11);
and the thickness of the third N-type aluminum gallium nitride layer (12) is smaller than that of the first N-type aluminum gallium nitride layer (3).
6. Epitaxial wafer according to claim 5, characterized in that the cascaded aluminum gallium nitride epitaxial structure further comprises a second aluminum gallium nitride layer (13), the second aluminum gallium nitride layer (13) being located between the second P-type aluminum gallium nitride layer (10) and the second active layer (11).
7. Epitaxial wafer according to claim 4, characterized in that the thickness of the first N-type aluminium gallium nitride layer (3) is 500 nm or more, and/or;
the thickness of the second N-type aluminum gallium nitride layer (7) and the thickness of the third N-type aluminum gallium nitride layer (12) are larger than 10 nanometers and smaller than the thickness of the first N-type aluminum gallium nitride layer (3).
8. Epitaxial wafer according to claim 1, characterized in that the layer of support material (1) comprises one of the following structural layers: a substrate, a base plate or a layer of a group iii-v compound material.
9. Epitaxial wafer according to claim 8, characterized in that the support material layer (1) is a substrate, which is a hetero-substrate or a homo-substrate, the material of which comprises one of the following materials: sapphire, silicon wafer, aluminum nitride, gallium nitride, aluminum gallium nitride or silicon carbide.
10. The preparation method of the deep ultraviolet light-emitting epitaxial wafer is characterized by comprising the following steps of:
growing a first N-type aluminum gallium nitride layer (3) above the support material layer (1);
growing a first tunneling layer (4) above the first N-type AlGaN layer (3);
growing a first P-type AlGaN layer (5) above the first tunneling layer (4);
growing a first active layer (6) above the first P-type AlGaN layer (5);
and growing a second N-type aluminum gallium nitride layer (7) above the first active layer (6).
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