CN1732568A - 具内部偏馈射频功率晶体管 - Google Patents
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Abstract
传统宽频射频功率放大器系使用1/4波长传输线将占用印刷电路板相对较大空间之栅极偏压直流源极从栅极电路去耦合,及第二1/4波长传输线将漏极偏压直流源极从漏板电路去耦合。新宽频射频功率放大器不需1/4波长传输线而使用具有用于注入栅极偏压及漏极偏压直流源极之独立终端的晶体管,藉此免除空间并促进更高密度封装。功率放大器晶体管可以单印模电路或并联操作之多印模电路来实施。
Description
发明背景
本发明大致属于被用于无线通信应用中之射频(RF)放大器,更特定属于高频,高功率电阻器领域。
背景
无线通信应用中使用射频功率放大器系已熟知。由于如个人通信服务之无线服务需求近期成长,无线网络操作频率系急遽增加而现在超过2GhZ。射频功率放大器阶系普遍被用于无线通信网路无线基地台放大器中。该功率放大器亦被广泛用于其它射频相关应用,如手机,呼叫系统,导航系统,电视,航空电子及军事应用。该电路必须操作之高频处,主动组件之阻抗匹配及偏压系为功率放大器有效操作之重要因素。被用来匹配功率晶体管至外部装置之输入及输出电路,通常系以印刷电路板上之接线电感,带状线路或微带结构及分离电容器之组合来实施。
如图2及3所示,典型共享电源放大器阶系具有一射频馈给,一功率晶体管200及一射频输出。功率晶体管200系为一三终端装置,具有一输入终端210,一输出终端220,及为被接地之凸缘205之一共享终端。功率晶体管200系将来自该射频馈给之低功率信号放大为从该射频输出被传递至负载之高功率信号。一输入偏压网络系提供被称为输入偏馈之直流电压至建立晶体管200之输入操作点之功率晶体管200。输出偏压网络系提供被称为输出偏馈之直流电压至建立晶体管200之输出操作点之功率晶体管200。
一输入阻抗变压器231系于操作频率及功率位准处将该射频馈给之阻抗(通常为50欧姆)转换为输入终端210处之阻抗(通常为8-10欧姆)。输入阻抗变压器231较佳为操作频率处之1/4波长(lambda)微带传输味线。
同样地,一输出阻抗变压器241系于操作频率及功率位准处将该输出终端220处之阻抗(通常为1至10欧姆)转换为射频输出之阻抗(通常为50欧姆)。输出阻抗变压器241较佳为操作频率处之1/4波长微带传输线。
输入阻隔电容器232可防止因阻隔直流电压形成之射频馈给电路负载不致进入放大器阶。输出阻隔电容器242可防止因阻隔直流电压形成之射频输出电路负载不致从射频输出。
此外,防止被产生于功率放大器阶内部之高频信号不致沿非预期传输路径逸散系很重要。为了防止功率放大器中之高频信号不致污染可偏压该放大器之直流电压源,设计者通常使用被以微带结构实施之1/4波长传输线。传输线理论预测被短路中止于其末端之1/4波长传输线系于近端具有为开放电路之一近端。实务上,被以相对较低阻抗终止之1/4波长传输线系出现驱动源之高阻抗。此方式系防止被引导朝向输入终端210之射频功率不致泄漏至输入偏压网络,及提供一种耦合直流电压至功率晶体管200而不干扰阻抗匹配结构之方法。
例如,图2及3所示之输入偏压电路上,输入偏压传输线233系为具有其末端被耦合至输入偏馈之直流电压源之1/4波长传输线。近端系被耦合至功率晶体管之输入终端210。组合输入偏馈之直流电压源及去耦合电容器234及235系对接近线233末端处之广泛频率短路。
电容器234系具有小电容值且被选为具有操作频率处或附近之串联共振。具有陶介电值之电容器234典型值系为5至50pF。电容器235系具有大电容值且被选为具有用于低中频之高电容电抗及适度电感。具有钽介电值之电容器235典型值系为0.05至0.5uF。放大器应被操作为连续波(CW)放大器,电容器235并不需要被适度去耦合。
输入偏馈电压之直流电压源系形成低频交流信号及直流之短路。因为线233末端系被短路终止,所以线233近端之输入阻抗似乎为被产生于输入终端210附近之高频信号之开放电路。此开放电路系阻隔射频信号不致沿非预期传输路径逸散,特别是防止污染输入偏馈之直流电压源。
同样地,1/4波长传输线系被用来防止来自输出终端220之射频信号不致流回输出偏馈之直流电压源。输出偏馈传输线243系为具有其末端被耦合至输出偏馈之直流电压源之1/4波长传输线。近端系被耦合至功率晶体管输出终端220。组合输出偏馈之直流电压源及去耦合电容器244及245系形成接近线243末端处之广泛频率短路。电容器244系具有小电容值且被选为具有操作频率处或附近之串联共振。具有陶介电值之电容器244典型值系为5至50pF。具有钽介电值之电容器245典型值系为0.05至0.5uF。因为线243末端系被短路终止,所以线243近端之输入阻抗似乎为被产生于可阻隔射频信号不污染输出偏馈之直流电压源之输入终端210附近之信号之开放电路。
虽然使用1/4波长传输线来提供输入及输出偏压至晶体管200已被发现为实务偏压解,但仍具有使其用途非最佳之若干因素。印刷电路板上之相对较大区域系为其实施所需,藉以降低放大器之封装密度。此外,1/4波长传输易发出射频能量,降低整体放大器效率。再者,将1/4波长传输线耦合至功率晶体管输入系因使设计处理复杂化之分配组件效应而很难模制。
典型功率晶体管200之实体配置系被更详细描绘于图1A中,而晶体管200之等效电路系出现于图3。功率晶体管200系具有一晶体管印模219,一栅极调谐网络,及一漏极调谐网络。晶体管印模219系较佳为一场效晶体管印模且特别为具有被形成于上表面之一栅极及漏极区域之横向扩散金属氧化硅装置(LDMOS)。高传导潜沉区域系被形成来提供印模219之源极区域及下表面间之低电阻传导路径。印模219系被接合至凸缘205,藉此热及机械耦合印模至该凸缘及电耦合该源极至该凸缘。以下图标及正文中,晶体管印模系被描述为一横向扩散金属氧化硅装置,熟练实施者将得知具有许多制造可接受放大器之其它印模类型选择。
接引线系被用来电耦合印模219之栅极至印模219之输入终端210及漏极至输出终端220。接引线亦被用来互连其它组件。这些接引线系具有典型操作频率不能被忽略之自电应。栅极调谐网络系被要求有效耦合来自射频馈给之射频功率至印模219之栅极。同样地,漏极调谐网络亦被要求有效耦合来自印模219之栅极之射频功率至射频输出及负载。
栅极调谐网络提供补偿接引线电感器及与印模219之栅极连结之输入电容。栅极调谐网络系包含一”T网络”及一”分路网络”。T网络系包含各被耦合至中央节点之被耦合至输入终端210之一第一接引线电感211,被耦合至印模219之栅极之一第二接引线电感212,及被耦合接地于凸缘205上之一第一输入电容器216。分路网络系包含被耦合至相对较高电容之第二输入电容217之第三接引线电感213。第二输入电容217系为一阻隔电容器,其可防止电感213不致于印模219栅极处将直流偏压短路接地。第三接引线电感213系被耦合至印模219之栅极,而第二输入电容器217系被耦合接地于凸缘205上。
T网络系以基本频率将阻抗”注视”转换为晶体管输入终端210来匹配线231之阻抗。分路网络系提供基本信号频率之共振而使栅极电抗无效。
漏极调谐网络提供补偿接引线电感器及与印模219之漏极连结之电容。漏极调谐网络系包含一分路网络及一串联电感。串联电感系为连接印模219之漏极至输出终端220之第五接引线215结果。分路网络系包含被耦合至第一输出电容器218之第四接引线电感214。该第四接引线电感214系被耦合至印模219之漏极,而该第一输出电容器218系被耦合接地于凸缘205上。这些组件系提供预定负载阻抗处之宽频匹配。
图1B系描绘功率晶体管100替代型式之实体配置,其具有两个类似被耦合及并联操作的晶体管200者之电路。类似晶体管200,晶体管100系具有三终端装置:一输入终端110,一输出终端120,及一凸缘105。第一印模电路系具有一印模,一栅极调谐网络,及一漏极调谐网络。第二印模电路系具有一印模,一栅极调谐网络,及一漏极调谐网络。经济及实务生产容限内,两印模电路系被匹配使负载可被各印模电路大约等分。各电路功能系如上述的晶体管200。熟练实施者亦得知三个或更多印模电路可被并联耦合来提供额外功率处理能力。
输入偏压传输线233及输出偏压传输线243系占用包含其之印刷电路板上相对较大及有价值空间。三终端射频功率晶体管封装已限制设计者对其提供输入偏压及输出偏压之选择。射频放大器之逐增高密度封装需求系暗示降低被放大器阶消耗之基板空间系可预期及较低成本。因此,需要更有效使用印刷电路板空间而无实际效能损失之输入偏压电路及输出偏压电路。
发明摘要
依据一般观点,在此揭示及说明之本发明系有关被设计及建构来克服上述问题并促使更简单大规模生产之高频,高功率,宽频射频放大器。
一实施例中,宽频射频放大器系包含具有5终端之功率晶体管封装。如图4A所示,晶体管晶体管300系具有一输入终端310,一输出终端320,一凸缘305,一输入偏压终端350,一输出偏压终端360。当被用与新偏压电路共同操作时,输入偏压终端350之增加物系不需1/4波长输入偏压传输线,藉此降低被放大器阶占用之总面积。输出偏压终端360被以类似方式处理,不需1/4波长输出偏压传输线。
另一实施例中,宽频射频放大器系包含具有7终端之功率晶体管封装。如图4B所示,功率晶体管400系具有一输入终端410,一输出终端420,一凸缘405,一第一输入偏压终端450,一第二输入偏压终端451,一第一输出偏压终端460,及一第二输出偏压终端461。当被用与新偏压电路共同操作时,第一及第二输入偏压终端450及451之增加物分别不需第一及第二1/4波长输入偏压传输线,藉此降低被放大器阶占用之总面积。第一及第二输出偏压终端被以类似方式处理。
在此揭示之本发明其它观点及特色此后将得知。
图标简单说明
图标系描绘被揭示发明较佳实施例之设计及使用,其中不同实施例中之类似
组件为了容易描绘系藉由相同参考数字来参照,而其中:
图1A描绘具有一印模电路之典型先前技术之射频功率晶体管实体配置。
图1B描绘具有两个被耦合及并联操作之印模电路之替代先前技术射频功率晶体管实体配置。
图2描绘使用具有图1A之功率晶体管之先前技术宽频射频功率放大器实体配置。
图3系为图2所示先前技术宽频射频功率放大器区段之等效电路图。
图4A描绘具有一印模电路之新射频功率晶体管实体配置。该功率晶体管系具有输入及输出终端处之直流阻隔,及一独立输入偏压终端及输出偏压终端。
图4B描绘具有两个被耦合及并联操作之印模电路之新射频功率晶体管实体配置。该功率晶体管系具有输入及输出终端处之直流阻隔,及用于各印模之一独立输入偏压终端及输出偏压终端。
图5描绘使用具有图4A之功率晶体管之新宽频射频功率放大器区段实体配置。
图6系为图5所示新宽频射频功率放大器区段之等效电路图。
图7描绘使用具有图4B之功率晶体管之新宽频射频功率放大器区段实体配置。
图8系为图7所示新宽频射频功率放大器区段之等效电路图。
较佳实施例之详细说明
图4A描绘一新功率晶体管300及图6所示用于晶体管300之等效电路实体配置。类似图1A之先前技术晶体管,此功率晶体管300系具有一输入终端310,一输出终端320,一场效晶体管印模319,一栅极调谐网络,及一漏极调谐网络。场效晶体管印模319系较佳为一横向扩散金属氧化硅装置。印模319系被接合至凸缘305,藉此热及机械耦合印模319至该凸缘及电耦合源极至凸缘305。不像图1A之先前技术晶体管,此功率晶体管300系具有一输入偏压终端350及一输出偏压终端360,使晶体管300为五个终端装置。以下图标及正文中,晶体管印模系被描述为一横向扩散金属氧化硅装置,熟练实施者将得知具有许多制造可接受放大器之其它印模类型选择。
此外,亦注意晶体管300具有一输入阻隔电容器332及一输出阻隔电容器342。先前技术放大器中,这些电容器系外接图2及3所示的晶体管。输入阻隔电容器332系具有其被接合至最接近印模319之位置处之输入终端310之第一终端,及被电耦合至印模319栅极之其第二终端。输出阻隔电容器342系具有其被接合至最接近印模319之位置处之输出终端320之第一终端,及被电耦合至印模319漏极之其第二终端。
接引线系被用来电耦合晶体管300之组件。许多例中,这些接引线系具有典型操作频率时不能被忽略之自电感。接引线系被用来电耦合印模319栅极经由输入阻隔电容器332至输入终端310,及电耦合印模319漏极经由输出阻隔电容器342至输出终端320。栅极调谐网络系被要求有效耦合来自射频馈给之射频功率至印模319之栅极。同样地,漏极调谐网络亦被要求有效耦合来自印模319之栅极之射频功率至射频输出及负载。
栅极调谐网络提供补偿接引线电感器及与印模319之栅极连结之输入电容。参考图6,栅极调谐网络系包含一”T网络”及一”分路网络”。T网络系包含各被耦合至中央节点之被耦合至输入阻隔电容器332之一第一接引线电感311,被耦合至印模319之栅极之一第二接引线电感312,及被耦合接地于凸缘305上之一第一输入电容器316。分路网络系包含被耦合至相对较高电容之第二输入电容317之第三接引线电感313。第二输入电容317系为一阻隔电容器,其可防止电感313不致于印模319栅极处将直流偏压短路接地。第三接引线电感313系被耦合至印模319之栅极,而第二输入电容器317系被耦合接地于凸缘305上。
T网络系以基本频率将阻抗”注视”转换为晶体管输入终端310来匹配线331之阻抗。分路网络系提供基本信号频率之共振而使栅极电抗无效。
漏极调谐网络提供补偿接引线电感器及与印模319之漏极连结之电容。漏极调谐网络系包含一分路网络及一串联电感。串联电感系为连接印模319之漏极至输出阻隔电容器342之第五接引线315结果。分路网络系包含被耦合至第一输出电容器318之第四接引线电感314。该第四接引线电感314系被耦合至印模319之漏极,而该第一输出电容器318系被耦合接地于凸缘305上。这些组件系提供预定负载阻抗处之宽频匹配来提供预期功率位准以利有效放大器操作。
输入偏压接引线351系被用来经由第二输入电容器317电耦合印模319之栅极。输出偏压接引线361系被用来经由第一输出电容器318电耦合印模319之漏极。
图5及6系描绘新共享源极功率放大器阶中的晶体管300使用。类似图2及3之先前技术功率放大器,此功率放大器系具有一射频馈给,一功率晶体管300及一射频输出。然而,重要应注意输入偏馈并不以1/4波长传输线被电耦合至栅极。明确地说,输入偏馈系被直接电耦合至输出偏馈终端360。
回忆图4A,功率晶体管300系为一5终端装置,具有一输入终端310,一输出终端320,被接地之一凸缘305,一输入偏压终端350及一输出偏压终端360。类似图2及3所示之先前技术放大器,图5及6中之功率晶体管300系将来自射频馈给之低功率信号放大为从射频输出被传递至负载之高功率信号。输入阻抗变压器331系将射频馈给之阻抗转换为输入终端310处之阻抗。输入阻抗变压器331系较佳为操作频率处之1/4波长微带传输线。输出阻抗变压器341系将输出终端320处之阻抗转换为射频输出处之阻抗。输出阻抗变压器341亦较佳为操作频率处之1/4波长微带传输线。
输入阻隔电容器332系阻隔内及外直流电压经由输入终端310进入或离开功率晶体管300。输出阻隔电容器342系阻隔内及外直流电压经由输出终端320进入或离开功率晶体管300。
输入偏馈系提供直流电压至功率晶体管300以建立晶体管300之输入操作点。防止被产生于功率放大器阶内部之高频信号不致沿非预期传输路径逸散系很重要。特别重要系防止功率放大器中之高频信号不致污染可偏压该放大器之直流电压源极。图6所示之新输入偏馈及输出偏馈系可不使用先前技术1/4波长传输线而有效将直流电压偏压源极与被产生于放大器阶内部之高频信号隔离。
输入偏馈电路具有一输入偏馈导体333,输入去耦合电容器334及335,及一输入偏压接引线351。输入偏压接引线351系被电耦合至输入偏馈终端350,且与输入偏馈导体333结合来提供经由输入分路网络电感313至印模319栅极之直流路径。输入去耦合电容器334及335系提供从输入偏馈终端350至接地之交流分路路径。输入偏压接引线电感351系被保持如实际上一样低。
输入偏馈导体333系电耦合输入偏馈直流源极至输入偏馈终端350。假设其具有非常低电感,则其可为针对此被选择之任何低电感导体。功率平面,多精确规格接引线,或较大规格镶饰,缕或固导体均可有利地被单独或组合使用。
第一输入去耦合电容器334系具有小电容值且被选择具有操作频率处或附近之串联共振。具有陶介电值之电容器334典型值系为5至50pF。电容器335系具有大电容值且被选为具有用于低中介射频之高电容电抗及适度电感。具有钽介电值之电容器335典型值系为0.05至0.5uF。
输出偏馈电路系以类似输入偏馈电路方式操作。其可不使用先前技术1/4波长传输线而有效将来自输出偏压源极之直流电压与被产生于放大器阶内部之高频信号隔离。来自输出偏压源极之直流电压系被注入被耦合至晶体管输出之输出分路网络。
输出偏馈系提供直流电压至功率晶体管300以建立晶体管300之输入操作点。输出偏馈电路系具有一输出偏馈导体343,输出去耦合电容器344及345,及一输出偏压接引线361。输出偏压接引线361系被电耦合至输出偏馈终端360,且与输出偏馈导体343结合来提供经由输出分路网络电感314至印模319漏极之直流路径。输出去耦合电容器344及345系提供从输出偏馈终端360至接地之低阻抗交流分路路径。输出偏压接引线361系被保持如实际上一样低。
第一输出去耦合电容器344系具有小电容值且被选择具有操作频率处或附近之串联共振。具有陶介电值之电容器344典型值系为5至50pF。电容器345系具有大电容值且被选为具有用于低中介射频之高电容电抗及适度电感。具有钽介电值之电容器345典型值系为0.05至0.5uF。
图4B描绘类似晶体管300者之具有两个被耦合及并联操作之印模电路之新射频功率晶体管实体配置。此晶体管500之等效电路系出现于图8。晶体管500系具有七个终端:一输入终端110,一输出终端120,一凸缘105,一第一输入偏压终端550,一第二输入偏压终端555,一第一输出偏压终端560,及一第二输出偏压终端565。
第一印模电路系具有一印模519,一第一栅极调谐网络,及一第一漏极调谐网络。第二印模电路系具有一印模529,一第二栅极调谐网络,及一第二漏极调谐网络。各印模电路功能系个别如上述图4A的晶体管300。经济及实务生产容限内,该两印模电路系被匹配使各印模电路可大约均等分享该负载。熟练实施者亦得知三个或更多印模电路可被并联耦合来提供额外功率处理能力。
图7及8系描绘新共享源极功率放大器阶中的晶体管500使用。类似图5及6之功率放大器,此功率放大器系具有一射频馈给,一功率晶体管500及一射频输出。此功率放大器可具有一单输入偏压终端及一单输出偏压终端,或相反地,其可具有如图7及8所示用于各印模电路之一独立输入偏压终端及输出偏压终端。
回忆图4B,功率晶体管500系为一7终端装置,具有一输入终端510,一输出终端520,被接地之一凸缘505,一第一输入偏压终端550,一第一输出偏压终端560,一第二输入偏压终端555,一第二输出偏压终端565。类似图2及3所示之先前技术放大器,功率晶体管500系将来自射频馈给之低功率信号放大为从射频输出被传递至负载之高功率信号。输入阻抗变压器531系将射频馈给之阻抗转换为输入终端510处之阻抗。
输入阻抗变压器531系较佳为操作频率处之1/4波长微带传输线。输出阻抗变压器541系将输出终端520处之阻抗转换为射频输出处之阻抗。输出阻抗变压器541亦较佳为操作频率处之1/4波长微带传输线。
输入阻隔电容器532系阻隔内及外直流电压经由输入终端510进入或离开功率晶体管500。输出阻隔电容器542系阻隔内及外直流电压经由输出终端520进入或离开功率晶体管500。
第一输入偏馈电路系以如图5及6所说明相同方式提供直流电压来偏向第一印模519之输入。再者,第一输出偏馈电路系以如图5及6所说明相同方式提供直流电压来偏向第一印模519之输出。同样地,第二输入偏馈电路系提供直流电压来偏向第二印模529之输入,而第二输出偏馈电路系提供直流电压来偏向第二印模529之输出。
熟练实施者将得知第一及第二印模电路之直流电压输入偏馈源极可为独立源极或共享源极。输入偏馈共享可藉由增添电耦合第一印模519之栅极至第二印模529之栅极之接引线而被达成于功率晶体管内部。可替代是,输入偏馈共享亦可藉由增添电耦合第一分路电容器517至第二分路电容器527之接引线而被达成。再者,该接引线易增加某些应用之放大器稳定性。独立输入偏馈或共享输入偏馈配置均可以成本及效能要求为基础被选择。
同样地,第一及第二印模电路之直流电压输出偏馈源极可为独立源极或共享源极。输出偏馈共享可藉由增添电耦合第一输出分路电容器518至第二输出分路电容器之接引线而被达成于功率晶体管内部。再者,该接引线易增加某些应用之放大器稳定性。独立输出偏馈或共享输出偏馈配置均可以成本及效能要求为基础被选择。
虽然本发明特定实施例已被显示及说明,但本发明并不限于较佳实施例,熟练技术人士了解只要不背离仅被附带权利要求及其等同者定义之本发明范畴,均可作各种改变及修改。
Claims (28)
1.功率晶体管,包含:
-一凸缘;
-一印模,具有一栅极一源极及一漏极,其中该源极系被电耦合至该凸缘;
-一栅极调谐电路,被放置于该凸缘上,具有一输入及一输出,该输出系被与该栅极耦合;
-一漏极调谐电路,被放置于该凸缘上,具有一输入及一输出,该输入系被与该漏极耦合;
-一输入终端,被机械耦合至该凸缘,且被与该栅极调谐电路之该输入电耦合;
-一输入偏压终端,被机械耦合至该凸缘,且被与该栅极电耦合;
-一输出偏压终端,被机械耦合至该凸缘,且被与该漏极电耦合。
2.如权利要求1的晶体管,其中该印模系为一横向扩散金属氧化硅晶体管。
3.如权利要求1的晶体管,其中该栅极调谐网络及该漏极调谐网络各包含一T网络及一分路网络。
4.如权利要求3的晶体管,其中该偏压输入终端及该偏压输出终端各被与该个别分路网络耦合。
5.如权利要求3的晶体管,其中该T网络系包含被串联耦合之第一及第二接引线,及被耦合于该接引线及源极连接间之一电容器。
6.如权利要求1的晶体管,进一步包含被电耦合于该输入终端及该栅极调谐网络间之一输入阻隔电容器。
7.如权利要求6的晶体管,其中该输入阻隔电容器系被放置于该输入终端之近端。
8.如权利要求1的晶体管,进一步包含被电耦合于该输出终端及该漏极调谐网络间之一输出阻隔电容器。
9.如权利要求8的晶体管,其中该输出阻隔电容器系被放置于该输出终端之近端。
10.如权利要求1的晶体管,其中复数印模,复数栅极调谐电路及复数漏极调谐电路系被提供。
11.一种宽频射频信号放大器,包含:
被附着至垫座表面之至少一晶体管,该晶体管系具有一射频输入及一射频输出,一偏压输入及一偏压输出;该垫座包含一支架结构,参考接地及用于该晶体管之散热件;
一射频输入路径,被电子连接至该晶体管输入,一输入匹配网络,被配置以输入阻抗耦合该输入信号至该晶体管输入,及一输入直流偏压网络,被配置偏压该晶体管输入至一输入操作点,及
一射频输出路径,被电子连接至该晶体管输出,一输出匹配网络,被配置以输出阻抗耦合该个别组件输出信号至该晶体管输出,及一输出直流偏压网络,被配置偏压该晶体管输出至一输出操作点。
12.如权利要求11的该放大器,其中复数晶体管系被提供于该垫座上,且其中该输出路径系包含被配置分割射频输入信号为复数组件输入信号之一分裂器,而其中该分裂器,输入匹配网络及输入偏压网络系至少被部分实施于多位准印刷电路板中。
13.如权利要求12的该放大器,其中该输出路径系包含一组合器,被配置组合被接收于该晶体管输出处之组件输出信号为射频输出信号,而其中该组合器,输出匹配网络及输出偏压网络系至少被部分实施于印刷电路板中。
14.如权利要求11的该放大器,其中该印刷电路板系具有被裁制容纳该垫座之一开口。
15.如权利要求11的该放大器,其中该输入及输出路径系包含被实施于印刷电路板中之个别输入及输出参考接地架,而该垫座及印刷电路板系被安置,使该输入及输出参考接地架邻接该垫座表面。
16.如权利要求15的该放大器,进一步包含电子连接该输入及输出参考接地架至该垫座表面之个别导体。
17.如权利要求16的该放大器,其中该导体系包含各组接引线,该印刷电路板及垫座系被非常接近放置,使该接引线得以提供相对较低电感传输路径。
18.如权利要求11的该放大器,其中该输入匹配网络系包含被实施于印刷电路板中且电子连接该组件输入信号至各晶体管输入之传输线,该传输线系具有该射频输入信号基本频率大约四分之一波长之长度。
19.如权利要求11的该放大器,其中该输出匹配网络系包含被实施于印刷电路板中且电子连接该组件输出信号至该组合器之传输线,该传输线系具有该射频输入信号基本频率大约四分之一波长之长度。
20.如权利要求11的该放大器,其中该输入匹配网络系包含被附着至该垫座之个别输入匹配电容器,该个别输入偏压网络系电子连接输入直流偏压源极至个别输入匹配电容器,该输出匹配网络系包含被附着至该垫座之个别输出匹配电容器,而该个别输出偏压网络系电子连接输出直流偏压源极至个别输出匹配电容器。
21.如权利要求20的该放大器,其中该输入直流偏压源极系经由被实施于该印刷电路板中之个别输入传输线被连接至该输入匹配电容器,而其中该输出直流偏压源板系经由被实施于印刷电路板中之个别输出传输线被连接至该输出匹配电容器,而该个别输入及输出传输线各具有该射频输入信号基本频率大约四分之一波长之长度。
22.如权利要求20的该放大器,其中该输入直流偏压源极系被连接至该输入匹配电容器,而其中该输出直流偏压源极系被连接至该输出匹配电容器,该输入或输出直流偏压源极并不经由具有该射频输入信号基本频率大约四分之一波长之长度之传输线来传送。
23.如权利要求13的该放大器,其中该分裂器及组合器系为被动组件。
24.如权利要求11的该放大器,其中该输入阻抗系相对较高,而该输入操作点系相对较低。
25.如权利要求13的该放大器,进一步包含
第一复数导体,可电子连接被实施于该印刷电路板中之个别输入路径传输线至个别晶体管输入,及第二复数导体电子连接被实施于该印刷电路板中之个别输出路径传输线至个别晶体管输出。
26.如权利要求25的该放大器,其中该第一及第二复数导体系包含延伸于该印刷电路板及该垫座间之各组接引线。
27.如权利要求第10项的该放大器,其中该垫座及印刷电路板系被附着至一共享参考接地及一散热件。
28.如权利要求27的该放大器,其中该输入及输出路径系包含被实施于该印刷电路板中之个别输入及输出参考接地架,而该输入及输出参考接地架系藉由提供低电感路径之个别复数接引线被电子连接至该垫座。
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JP3060981B2 (ja) * | 1997-02-21 | 2000-07-10 | 日本電気株式会社 | マイクロ波増幅器 |
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CN1623232B (zh) * | 2002-01-24 | 2010-05-26 | Nxp股份有限公司 | 射频放大器装置以及与其相关的模块和方法 |
-
2002
- 2002-12-19 US US10/324,694 patent/US6734728B1/en not_active Expired - Lifetime
-
2003
- 2003-11-14 TW TW092132085A patent/TWI285993B/zh not_active IP Right Cessation
- 2003-11-24 WO PCT/EP2003/013191 patent/WO2004057666A2/en not_active Application Discontinuation
- 2003-11-24 EP EP03767634.3A patent/EP1573813B1/en not_active Expired - Lifetime
- 2003-11-24 CN CNB2003801070887A patent/CN100459121C/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103178040A (zh) * | 2011-12-21 | 2013-06-26 | 财团法人工业技术研究院 | 半导体结构及其制造方法 |
CN108206677A (zh) * | 2016-12-20 | 2018-06-26 | 恩智浦美国有限公司 | 用于具有增强视频带宽的rf功率放大器的多基带终端组件 |
CN108206677B (zh) * | 2016-12-20 | 2023-09-26 | 恩智浦美国有限公司 | 用于具有增强视频带宽的rf功率放大器的多基带终端组件 |
CN107508561A (zh) * | 2017-08-14 | 2017-12-22 | 电子科技大学 | 一种跨倍频程宽带功率放大器及其实现方法 |
CN107508561B (zh) * | 2017-08-14 | 2020-09-25 | 电子科技大学 | 一种跨倍频程宽带功率放大器及其实现方法 |
WO2022143504A1 (zh) * | 2020-12-30 | 2022-07-07 | 华为技术有限公司 | 一种射频放大器 |
CN117895933A (zh) * | 2024-03-18 | 2024-04-16 | 上海唯捷创芯电子技术有限公司 | 射频开关电路、芯片及其电子设备 |
Also Published As
Publication number | Publication date |
---|---|
WO2004057666A3 (en) | 2004-09-10 |
WO2004057666A2 (en) | 2004-07-08 |
TW200417134A (en) | 2004-09-01 |
EP1573813B1 (en) | 2016-10-19 |
EP1573813A2 (en) | 2005-09-14 |
TWI285993B (en) | 2007-08-21 |
CN100459121C (zh) | 2009-02-04 |
US6734728B1 (en) | 2004-05-11 |
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