CN1669098A - 多抽头线圈 - Google Patents

多抽头线圈 Download PDF

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CN1669098A
CN1669098A CNA038172046A CN03817204A CN1669098A CN 1669098 A CN1669098 A CN 1669098A CN A038172046 A CNA038172046 A CN A038172046A CN 03817204 A CN03817204 A CN 03817204A CN 1669098 A CN1669098 A CN 1669098A
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coil
inductor
integrated circuit
tap
resonant circuit
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W·M·C·多曼斯
C·S·沃彻尔
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Koninklijke Philips NV
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Coils Or Transformers For Communication (AREA)
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Abstract

本发明涉及包含电感器和电容器的多频段谐振电路。这些谐振电路在集成电路上实现。根据本发明，电感器在包含中央(2)抽头和中间抽头(4、6)的单个线圈中实现。

Description

多抽头线圈
本发明涉及至少包含两个谐振电路的集成电路，特别用于多频段操作，每个谐振电路至少包含两个电感器，每个谐振电路至少包含一个电容器，所述的至少两个电感器和所述电容器分别提供一个谐振电路。本发明还涉及电信设备和发明的集成电路的使用。
在多频段广播或电信系统中，通常会使用多个谐振器调谐到相应的多个频段。这些谐振器通过使用电感器和电容器实现。集成电路中电感器的集成对于芯片区和质量系数来说至关重要。
US 5,892,425公开了一个互绕螺旋形中央抽头式电感器。这个中央抽头式电感器在具有绝缘、半绝缘或半导体基板的集成电路上实现，具有可选接地板。公开了一个三端中央抽头式电感器，其中有一对互绕螺旋形电感器共同排列在基板上。互绕螺旋形电感器由相应的一对配置在实质上共同平面上或其中的薄金属迹线构成。
通过使用所述具有中央抽头的多匝线圈，谐振质量系数由于匝之间的交叉导致的损耗增加而有所下降。在M个谐振器电路的情况下，必须提供M个电感线圈，从而要求更多更昂贵的硅面积。
还知道使用一匝线圈，这样不会产生匝之间的交叉。这些线圈的缺点在于它们需要更大的硅面积。例如，两匝线圈的感应系数为L-2a2(其中a为两匝线圈的半径)，而单匝线圈的感应系数为L～b2(其中b为单匝线圈的半径)。这表示单匝线圈的半径必须是两匝线圈半径的1.4倍才能达到相同的感应系数。此外，M个谐振电路需要M个线圈进行多模式操作。
所以本发明的目标之一是提供基板使用减少的谐振电路。本发明的另一个目标是提供具有良好谐振质量系数的电感器。本发明还有一个目标是提供电感器在集成电路中的简易集成。
本发明的这些目标通过集成电路实现，其中用于所述至少两个谐振电路的所述电感器由一个线圈提供，且所述线圈安装在所述集成电路的芯片区。
在两个电感器用于一个谐振电路，且两个谐振电路用于多频段操作时，必须提供四个电感器。根据本发明，这四个电感器由一个线圈提供。这一个线圈具有多个抽头，抽头之间的段各提供一个电感器。通过仅使用一个线圈，可以减少所需的基板空间。有可能在单个线圈中实现一个以上的谐振电路。
首选采用如权利要求2所述的措施。中央抽头将所述线圈分为两个分支。中间的抽头布置在所述中央抽头和所述线圈的连接引线之间。连接引线是线圈的外部端子。通过布置中间抽头，有可能在已经通过一个中央抽头实现分支的一个线圈中提供两个以上的感应分支。
通过提供如权利要求3所述的中间抽头，有可能根据谐振电路需要确定所述电感器的尺寸，其中感应系数由线段长度决定。
使用如权利要求4所述的布置，有可能为谐振电路提供大小相等的电感器。例如，所述的中间抽头将从所述中央抽头到所述连接引线的所述分支各分为两个段，其中中央抽头每侧的段大小相等。
如权利要求5所述的集成电路，其优点在于，电感器的感应系数由段长度决定。有可能每个分支上所述中央抽头与所述第一中间抽头之间的段提供第一电感器，以及所述中央抽头与所述连接引线之间的段(其长度为整个线圈长度的一半)定义第二电感器。所述谐振电路可使用所述第一电感器和所述第二电感器建立。
为了减少基板上所需的空间，建议如权利要求6所述的集成电路。
为了减少通孔导致的损失，建议如权利要求7所述的集成电路。
本发明的另一方面是电信设备，具体地说，是包含上述集成电路的多频段电信设备。
本发明的另一方面是将按照上述集成电路的集成电路用于广播或电信设备中，具体地说，用于多频段操作中。
广播设备可以是具有多频段接收器的电视接收器。电信设备可以是具有多频段标准接收部件的移动通信设备。
通过以下所述的实施例，可以了解和说明本发明的这些方面和其它方面。
图1a是传统的多频段振荡器；
图1b是传统的多匝几何形状；
图1c是传统的单匝几何形状；
图2a是本发明的多频段振荡器；
图2b是本发明的多匝电感线圈几何形状；
图2c是本发明的单匝电感线圈几何形状。
图1说明传统的多频段振荡器。对于每个频段，各提供谐振电路9、15和晶体管16、18。对于第一频段，提供包含电感器12a、12b和电容器11的所述谐振电路9。此谐振电路9调谐到所述的第一频段。还包括晶体管16和18。
对于第二谐振频率，提供所述第二谐振电路15，包含电感器14a、14b和电容器13。晶体管18连接到谐振电路15。
偏置端子2和20a，20a提供用于为所述谐振电路9、15和所述晶体管16、18提供电源。所述偏置端子20a、20b最好提供一个恒定电流。
所述的多频段谐振电路可以作为基板上的集成电路实现。因此，所述电感器12a、12b和14a、14b也必须在所述基板上实现。如上所述，电感器在偏置端子2和抽头4、6、8、10之间提供。电感器12a在偏置端子2和抽头4之间提供。电感器12b在偏置端子2和抽头6之间提供。电感器14a在偏置端子2和抽头8之间提供。电感器14b在偏置端子2和抽头10之间提供。
图1a显示可在基板上实现的电感器。显示了偏置端子2和电感器12a、12b和14a、14b的抽头4、6、8和10。电感器12a、12b可通过具有中央抽头的单个线圈12实现，其中偏置端子2连接到所述中央抽头且所述线圈的连接引线与抽头4、6连接。电感器14a、14b的情况相同，也可以通过单个线圈14实现，其中偏置端子2与所述中央抽头连接且抽头8、10与所述线圈14的所述连接引线连接。
如图1b所示，所述电感器12a、12b和14a、14b可以通过两个线圈12、14实现。图1b显示用于电感器12a、12b和14a、14b的多匝线圈12、14。对于图1a中的所述多频段谐振电路，在基板上必须提供两个线圈12、14。第一线圈12在偏置端子2和抽头4、6之间提供电感器12a、12b，第二线圈14在偏置端子2和抽头8、10之间提供所述电感器14a、14b。
如图1c所示，还可以通过单匝线圈12、14提供所述电感器12a、12b和14a、14b。电感器12a由偏置端子2和抽头4之间的分支提供，电感器12b由偏置端子2和抽头6之间的分支提供。电感器14a在偏置端子2和线圈14的抽头8之间的分支提供，电感器14b在偏置端子2和线圈14的抽头10之间的分支提供。
为了仅使用一个线圈提供多频段谐振电路，建议如图2a的电路布置。
谐振电路19包含电感器22、电容器21并且连接到晶体管26。晶体管26的发射器连接到偏置端子30a处的电流源。
谐振电路25包含电感器24、电容器23并且连接到晶体管28。晶体管28的发射器连接到偏置端子30b处的电流源。
偏置端子2、30a、30b为谐振电路19、25和晶体管26、28提供电源。
根据本发明，所述电感器22a、b和24a、b可以通过具有多匝的仅仅一个单线圈实现，如图2b所示。
偏置端子2和抽头4之间的段实现电感器22a，偏置端子2和抽头6之间的段实现电感器22b。电感器24a通过抽头4和抽头8之间的段实现，电感器24b通过抽头6和抽头10之间的段实现。
图2b显示一个多匝线圈。如图2c所示，通过作为一个单匝线圈的一个线圈也可以实现电感器22a、b和24a、b。电感器22、24再通过所述线圈的相应段实现。偏置端子2和抽头4之间的段实现电感器22a，偏置端子2和抽头6之间的段实现电感器22b。电感器24a通过偏置端子2和抽头8之间的线段实现，电感器24b通过偏置端子2和抽头10之间的段实现。
通过一个所述单个线圈也可以实现四个以上的电感器，因为单个线圈可实现的电感器数量仅与所述线圈上布置的中间抽头数量有关。此数量可以增加。
必须记住，本发明的所述线圈形状会电耦合谐振电路19、25的谐振环。
根据本发明，通过提供一个线圈，可以减少电感器在基板所用的空间。

Claims (9)

1.具有至少两个谐振电路的集成电路，特别用于多频段操作，
-每个谐振电路包含至少两个电感器，
-每个谐振电路包含至少一个电容器，
-所述至少两个电感器和所述电容器各提供一个谐振电路，其特征在于
-用于所述至少两个谐振电路的所述电感器由一个线圈提供，以及
-所述线圈安装在所述集成电路的芯片区。
2.如权利要求1所述的集成电路，其特征在于，所述线圈包含一个中央抽头，所述线圈包含中间抽头，以及所述线圈包含两个连接引线。
3.如权利要求1所述的集成电路，其特征在于，所述线圈由所述中央抽头分为两个分支，以及所述中间抽头将所述分支分为段。
4.如权利要求3所述的集成电路，其特征在于，所述段对称地布置在所述分支上。
5.如权利要求1所述的集成电路，其特征在于，所述电感器由所述中央抽头、所述中间抽头以及所述连接引线之间的所述段决定。
6.如权利要求1所述的集成电路，其特征在于，所述线圈为多匝线圈。
7.如权利要求1所述的集成电路，其特征在于，所述线圈为单匝线圈。
8.电信设备，具体地说，多频段电信设备，包含如权利要求1所述的集成电路。
9.在广播和电信设备中，特别是在多频段操作中，使用如权利要求1所述的集成电路。
CNA038172046A 2002-07-23 2003-06-25 多抽头线圈 Pending CN1669098A (zh)

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CN (1) CN1669098A (zh)
AU (1) AU2003244928A1 (zh)
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AU2003244928A1 (en) 2004-02-09
WO2004010444A1 (en) 2004-01-29

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