CN1728345A - 接触孔的形成方法、电路基板和电光学装置的制造方法 - Google Patents
接触孔的形成方法、电路基板和电光学装置的制造方法 Download PDFInfo
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- CN1728345A CN1728345A CNA2005100740863A CN200510074086A CN1728345A CN 1728345 A CN1728345 A CN 1728345A CN A2005100740863 A CNA2005100740863 A CN A2005100740863A CN 200510074086 A CN200510074086 A CN 200510074086A CN 1728345 A CN1728345 A CN 1728345A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H05K3/005—Punching of holes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0286—Programmable, customizable or modifiable circuits
- H05K1/0287—Programmable, customizable or modifiable circuits having an universal lay-out, e.g. pad or land grid patterns or mesh patterns
- H05K1/0289—Programmable, customizable or modifiable circuits having an universal lay-out, e.g. pad or land grid patterns or mesh patterns having a matrix lay-out, i.e. having selectively interconnectable sets of X-conductors and Y-conductors in different planes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
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- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
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Abstract
提供一种接触孔的形成方法、电路基板的制造方法及电光学装置的制造方法。本发明的方法,在具备基板(20)、在基板(20)上设置的第一电极(34b)、在第一电极(34b)上设置的层间膜(32)、和在层间膜(32)上设置的第二电极(34)的电路基板(10)上,被埋入层间膜(32)的接触孔(H)内、使第一电极(34b)与第二电极(34)导通的、由导电性材料构成的导电部(300)。首先用针(P)一边在层间膜(32)上机械开孔,一边用针(P)所含的溶剂将层间膜(32)化学溶解,形成直达第一电极(34b)的接触孔(H),在此接触孔(H)内埋入导电性材料形成导电部(300)。
Description
技术领域
本发明涉及接触孔的形成方法、电路基板的制造方法、以及包括液晶装置、有机EL装置和电泳装置的电光学装置的制造方法。
背景技术
半导体元件中,在电路基板上的不同层上设置的电极之间导通的情况下,利用光刻法或蚀刻法形成接触孔后,将导电性材料埋入所述接触孔中,使所述电极之间导通的技术是已知的(例如专利文献1)。
然而,一旦采用光刻法或蚀刻法,就需要制作图案形成,使制造工序变得复杂,或者需要真空装置和多个药品等,导致制造成本增高。
另一方面还知道,在构成导电性片材的基材的表里面上形成接触孔时,也可以用针等机械方法在基材上形成贯通孔来代替光刻法或蚀刻法,容易形成接触孔的技术(例如专利文献2)。
而且在具备在基板上设置的第一电极、覆盖此第一电极的层间膜和在此层间膜上设置的第二电极的电极基板中,利用针等在所述层间膜上机械开孔,或者通过剥下层间膜,可以考虑在所述第一电极与所述第二电极之间容易形成接触孔后,将导电性材料埋入这种接触孔内,使第一电极与第二电极导通的方法。。
专利文献1:特开平10-96960号公报
专利文献2:特开平2-21507号公报
然而,利用针等在覆盖第一电极的层间膜上开孔,形成接触孔的情况下,一旦针径微小就会使在层间膜上形成的接触孔的直径减小。于是,接触孔就会因层间膜具有的弹性力而堵塞。而且在此接触孔内埋入导电性材料的情况下,由于接触孔中途堵塞,所以不能将导电性材料一直填满至第一电极的表面为止。
因此,在所述第一电极与所述第二电极之间就不能实现导通。而且用针将电极上的层间膜剥下形成接触孔,填满导电性材料的情况下,被剥下的层间膜可以在层间膜上形成凸部。在这种状态下一旦借助于接触孔在层间膜上形成配线,在通过此凸部的配线之处就容易产生断线。
发明内容
本发明正是鉴于上述情况而提出的,其目的在于提供一种用针在层间膜上形成接触孔,埋入导电性材料的情况下,具有导通的可靠性,防止因凸部使配线断线的接触孔的形成方法、电路基板的制造方法及电光学装置的制造方法。
为了解决上述课题,本发明的接触孔的形成方法,是在基板上形成第一电极、在该第一电极上形成层间膜、在该层间膜上形成第二电极,借助于接触孔将所述第一电极与所述第二电极导通的电路基板的所述接触孔的形成方法,其特征在于,其中具备在所述层间膜中插入含有溶剂的针,用所述溶剂将所述层间膜溶解,形成所述接触孔的工序。
而且本申请的电路基板的制造方法,是在基板上形成第一电极、在该第一电极上形成层间膜、在该层间膜上形成第二电极,借助于接触孔将所述第一电极与所述第二电极导通的电路基板的制造方法,其特征在于,其中具备在所述层间膜中插入含有溶剂的针,用所述溶剂将所述层间膜溶解,形成所述接触孔的工序,和向所述接触孔内注入导电性材料的工序。
采用这种方法,能够用针在层间膜上机械开孔,用针中所含的溶剂将层间膜与针的界面化学溶解,使开孔达到第一电极的表面为止。因此,可以在层间膜上形成比针直径大的接触孔。
而且处于接触孔形成区域的层间膜由于被溶剂除去,所以接触孔不会被层间膜具有的弹性力所封闭,能被将导电性材料在接触孔中埋入得与第一电极接触,能够形成可以确实将第一电极和第二电极导通的可靠性高的接触孔。
另外,本发明中形成接触孔之际,由于无需用针将层间膜卷起,所以不会在层间膜的表面上形成因卷起产生的凸部。因此,例如借助于在层间膜上设置的接触孔形成将第一电极和第二电极连接的配线的情况下,能够防止配线因凸起而断线。
因而能够提高第一电极与第二电极导通的可靠性。
而且形成所述接触孔的工序,也可以是用多个所述针同时形成多个所述接触孔的工序。这样一来,能够减少制造工序。而且优选利用液滴喷出法将所述导电性材料注入所述接触孔内。这样一来,由电连接于第二电极与接触孔的配线等也能用相同工序的液滴喷出法制造,所以能够减少制造工序。
此外还可以在所述电路基板上形成以所述第一电极作为栅电极的有机薄膜晶体管。
对于有机薄膜晶体管而言,能够用有机膜形成例如栅绝缘膜。因此,例如采用旋涂法形成这种栅绝缘膜的情况下,这种栅绝缘膜将成为覆盖第一电极的层间膜的一部分。而且采用本发明,就第一电极上设置的栅绝缘膜而言,在针中所含溶剂的溶解作用下也能形成接触孔。因此,如上所述,能够形成可靠性高的接触孔。
本发明的电光学装置的制造方法,其特征在于,其中采用上述的电路基板制造方法。
这样一来,由于采用上述电路基板的制造方法,所以能够防止连接第一电极与第二电极的配线产生断线,提高导通可靠性,使所制造的电光学装置本身的可靠性提高。
附图说明
图1是电路基板的正视图。
图2是电路基板的要部的截面图。
图3是电路基板制造工序的说明图。
图4是导电部形成方法的工序说明图。
图5是电路基板中间工序中的正视图。
图6是电泳装置的正视图。
图中:
10...电路基板,10a...有机薄膜晶体管,20...基板,32...层间膜,34...栅电极(第二电极),35...栅极线连接部(第一电极),200...电泳装置,300...导电部,P...针,H...接触孔
具体实施方式
以下详细说明本发明。
图1是表示采用了本发明的接触孔形成方法的电路基板中第一种实施方式的图,图1中符号10是电路基板。
如图1所示,电路基板10例如在矩形基板20上的大体中央部位上具有多个有机薄膜晶体管10a、栅极线34a和像素电极D。而且在电路基板10上沿着长边方向的外周部10b上可以形成配置栅极线连接部34b。此外连接从栅极线连接部34b引出的栅极线引出线34c或源线引出线30c的外部连接端子35(以下也称栅线连接部),形成配置在沿着电路基板10的一个短边方向的外周部。
图2是表示上述电路基板10在X方向上侧部的截面图。
电路基板10具备柔性,是具备例如用聚碳酸酯等制成的矩形基板20、与在所述基板20上形成的后述的栅电极连接的栅极线连接部(第一电极)34b、层叠在此栅极线连接部34b上的绝缘层(层间膜)32、和在此层间膜32上形成的栅电极(第二电极)34的基板。其中,在所述层间膜32上形成收容层(未图示),当根据后述那样采用液滴喷出法(以下叫作喷墨法)形成栅电极34和栅极线34a时,被喷出的导电性材料将不起作用。
在所述栅极线连接部34b上设置的所述层间膜32上,可以形成将导电性材料埋入了接触孔H内的导电部300。
而且对于栅电极34,借助于根据后述那样用喷墨法形成的栅极线34a和所述导电部300连接在栅极线连接部34b上。而且,对于栅极线连接部34b,如图1所示借助于栅极线引出线34c电连接在外部端子35上。
其中,在所述栅电极34的下侧基板20上备有源电极和漏电极30,形成所谓顶栅结构的有机薄膜晶体管10a。另外,通过在所述层间膜32上层叠保护膜40,制成电路基板10。
(电路基板的制造工序)
以下参照图3~图5,说明在电路基板10的制造工序中形成接触孔的方法,同时说明电路基板10的各构成要素。其中图5是与图3(d)工序中图1所示的电路基板10的俯视图对应的图。
(栅极线连接部的制造工序)
首先如图3(a)所示,将基板20充分洗净后,使基板20脱气,在此基板20上全面蒸镀或溅射金属膜30a。作为金属膜30a,可以利用导电性优良的各种材料。
其次如图3(b)所示,利用旋涂法在金属膜30a上全面涂布光致抗蚀剂,利用热处理使其固化,进而通过实施曝光处理和显影处理形成掩模M。
进而如图3(c)所示,通过用掩模M实施蚀刻处理,根据该掩模M的开口图案形成金属膜图案30b。
最后如图3(d)所示,除去掩模M仅使金属膜图案30b残留在基板20上。所述金属膜图案30b,除有机薄膜晶体管10a的源电极和漏电极30以外,如图5所示,还形成栅极线连接部34b、栅极线引出线34c、外部连接部35和源线引出线30c。
(半导体层的制造工序)
然后如图3(e)所示,通过旋涂法在源电极和漏电极30上形成了半导体层31。作为所述半导体层的材料,例如可以举出萘、蒽、丁省、戊省、己省、酞菁、二萘嵌苯、腙、三苯甲烷、二苯甲烷、1,2-二苯乙烯、芳基乙烯、吡唑啉、三苯胺、三芳基胺、低聚噻吩、或其衍生物之类的低分子有机半导体材料,或聚-N-乙烯基咔唑、聚乙烯芘、聚乙烯蒽、聚噻吩、聚己基噻吩、聚(对苯撑乙烯撑)、聚亚噻嗯基乙烯撑(polythienylenevinylene)、聚芳胺、芘甲醛树脂、乙基咔唑甲醛树脂、芴-双噻吩共聚物、芴-芳胺共聚物或其衍生物之类的高分子有机半导体材料。这些材料中可以使用一种或者两种以上组合使用,但是特别优选高分子半导体材料。
利用蚀刻除去外周部10b、10c中的栅极线连接部34b和栅极线引出线34c上的半导体层,所述源电极和漏电极30上的半导体层31处于互相分离的状态。
另外,也可以减少工序,通过喷墨法仅在所需的位置形成半导体层31,以此来代替用图案化除去半导体层31。
(绝缘层制造工序)
如图3(f)所示,用旋涂法涂布绝缘性聚合物,形成绝缘层32。聚合物使用了聚乙烯苯酚或酚树脂(别名酚醛清漆树脂)。另外也可以使用以PMMA(聚甲基丙烯酸甲酯)为首的丙烯树脂、PC、聚苯乙烯、聚烯烃、聚酰亚胺、氟树脂等。本实施方式中,利用旋涂法涂布了采用PMMA,并以乙酸丁酯作溶剂制成的溶液。
其中,通过溶液的涂布制造绝缘层32的情况下,需要使半导体层31或基板20不被绝缘层32的溶液的溶剂膨润或溶解。当半导体层31本身是溶剂可溶性的情况下需要特别注意。半导体层31容易溶解在含有芳环的共轭分子或共轭高分子化合物的芳烃溶剂中。因此,对于绝缘层32的涂布而言,希望使用芳烃以外的烃类溶剂或者酮类、醚类、酯类的有机溶剂。
而且绝缘层32优选对于后述的栅电极34的材料具有非溶解性特性的。于是为了对后工序中形成的栅电极34和栅极线34a具有良好的湿润性或接触角,可以在绝缘层32的上部形成收容层(未图示)。
(接触孔的形成方法)
接着形成能将在所述层间膜32上形成的栅电极34和所述栅极线连接部34b导通的导电部300。
首先如图4(a)所示,将针P配置在形成导电部300的层间膜32上。此时针P中含有能够溶解所述层间膜32的溶剂(例如丙酮等)。作为使针P含有溶剂的方法,例如有将针P制成多孔性结构的方法。据此,像后述那样将针P插入层间膜32中时,无需在针P上涂布溶剂。
而且还可以代替多孔性结构,像注射针头那样将针P制成空心结构,这种情况下一边插入针P一边从针P内部挤出溶剂。此外,也可以将针P浸渍在充填了溶剂的液壶中等中使溶剂附着在针P上之后,插入层间膜32中。
另外,针P是可以用具备能在层间膜32上形成孔的那种强度的材料制成的。
然后将针P沿着如图4(a)所示的箭头方向插入层间膜32中。于是用针P在层间膜32上开始机械开孔。一旦插入针P,孔内部在层间膜32具有的弹性力作用下,针P与层间膜32的界面就变得密接。此时,在层间膜32与针P的界面上,在所述针P上附着的溶剂就开始溶解层间膜32。一旦直接继续插入针P,针P就会几乎从栅极线连接部34b突出。而且可以将针P插入的压力控制在不会将所述栅极线连接部34b贯通的程度。另外,由于针P含有的溶剂能够溶解层间膜32,所以针P与层间膜32、或栅极线连接部34b也可以不产生物理接触。
在层间膜32上不久就会形成比针P直径大的孔的状态。因此在层间膜32与针P之间的界面上由于产生间隙,所以在将针P拔出时在界面上没有摩擦力作用,能够容易地将针P从层间膜32中拔出。
其结果如图4(b)所示,在层间膜32上可以形成直达栅极线连接部34b表面上的接触孔H。
还有,将针P插入进去的角度优选与层间膜32大体垂直,以便防止因被涂布在针P上的溶剂使孔径大于所需的大小。
进而如图4(c)所示,利用喷墨法喷出导电性材料将其埋入所述接触孔H内,形成导电部300。
此时,所述接触孔H,如上所述由于直达上述栅极线连接部34b的表面上,所以借助于由被埋入此接触孔H内的导电性材料组成的导电部300,可以与所述栅极线连接部34b导通。
另外,当以一定间距设置多个针P的情况下,在同时形成多个接触孔H时能够减少制造工序,当像素数目增加时也能容易形成多个导电部300。
喷墨法中,通过使油墨喷头(未图示),以及使油墨喷头与基板20作相对移动的移动机构(未图示)动作,能够在绝缘层32的预定位置上喷出导电性材料。而且喷出液体材料的图案,由于是基于被存储在液滴喷出装置中的位映图图案(bit map pattern)等电子数据形成的,所以仅仅制作电子数据就能在所需位置上涂布液体材料。
对于油墨喷头来说,虽然可以采用由压电元件使油墨储槽的体积变化而喷出液滴的压电方式,通过对油墨储槽中油墨加热使其产生气泡,借以喷出液滴的加热方式,但是在喷出重视导电性油墨、绝缘膜油墨、半导体油墨等功能性液体的情况下,优选采用没有热影响的压电方式。
作为上述液体材料,可以采用PEDOT(聚乙烯二羟基噻吩)的水分散液。除PEDOT以外,还可以采用金属胶体。这些分散液虽然以水作为主要成分,但是也可以以添加了醇类的液体液滴形式形成接触。
(栅电极制造工序)
接着如图4(d)所示,用喷墨法在层间膜32上喷出导电性材料,形成栅电极34使源电极和漏电极30之间(通道上)覆盖,制成有机薄膜晶体管10a。
进而用喷墨法喷出导电性材料,形成将导电部300与所述栅电极34连接的栅极线34a。另外,在图4(d)中表示的是栅极线34a的一部分,实际上形成与栅电极34连接的。
所述栅极线34a,如图所示是与多个栅电极34连接的。而且上述栅极线34a由于是在X方向上延伸的直线,所以用喷墨法形成时,一边使喷头和基板20沿着单一方向扫描一边进行喷出。
最后如图4(e)所示,通过旋涂高分子溶液形成保护膜40,使层间膜32和栅电极34覆盖。此外,也可以与有机薄膜晶体管10a对应地形成像素电极D(参见图1)。而且当需要使电流流过有机EL装置之类电流驱动装置的情况下,或者需要对液晶装置之类电压驱动装置施加电压的情况下,也可以在保护膜40上形成像素电极,依照上述顺序形成导电部300,将像素电极与有机薄膜晶体管10a连接。
通过以上工序可以得到电路基板10。
对于这种接触孔的形成方法而言,用针P在层间膜32上机械开孔,借助于针P所含的溶剂将针P与层间膜32间的界面化学溶解,能够形成比针P直径大的、朝向栅极线连接部35上的接触孔H,使其直达栅极线连接部35的表面上。因此,接触孔H不会被层间膜32具有的弹性力所封闭,将导电性材料埋入所述接触孔H内与栅极线连接部35接触,这种情况下能够形成可以确实将栅极线连接部35导通的可靠性高的导电部300。其中,针P不一定与层间膜32接触,仅靠含有的溶剂将层间膜32溶解的情况下,不用说也能形成接触孔H。
而且本发明中,形成接触孔H时,不必用针P将层间膜32卷起,不会在层间膜32的表面上形成因剥离而产生的凸起。因此,当在层间膜32上形成通过导电部300将栅电极34与栅极线连接部35连接的栅极线引出线34a时,能够防止所述凸起使栅极线引出线34a断线。
因而能够提高将栅电极34与栅极线连接部35导通的可靠性。
而且在接触孔H内用喷墨法喷出导电性材料的情况下,能够形成导电部300,此外由于能够在同一工序中形成连接栅电极34与导电部300的栅配线34a,因而能减少制造工序。
此外,电路基板10备有有机薄膜晶体管10a,并通过有机膜形成了在栅电极34与栅极线连接部35之间形成的半导体层31。
而且若采用本发明的接触孔的形成方法,则通过所述栅极线连接部35上的半导体层31在被针P所含溶剂溶解,能够在栅电极34与栅极线连接部35之间形成接触孔H。因此如上所述,能够形成可靠性高的导电部300。
另外,并不限于本实施方式,可以作各种变更。例如,在本实施方式中,虽然是在接触孔H内埋入导电性材料形成导电部300后,形成栅电极34与栅极线34a的,但是也可以首先形成栅电极34与栅极线34a后,再于接触孔H内埋入导电性材料形成导电部300。
图6是表示本发明得到的电光学装置的实施方式的图,符号200是电泳装置。
电泳装置200是具备电路基板10、电泳显示部100、和与所述电路基板10连接的柔性基板50(Flexible Printed Circuit,以下简记作FPC)的装置。其中电路基板10是与上述实施方式相同的电路基板。
(电泳显示部分)
如图6所示,电泳显示部100由与电路基板10相对设置的对向基板65,和在这两个基板10、65之间设置的电泳层70构成。
上述电泳层70,由具备多个微胶囊70a构成。
上述微胶囊70a由树脂薄膜形成,微胶囊70a的大小定为与一个像素的大小相当,将多个微胶囊70a配置得将显示区域全部覆盖。而且微胶囊70a由于与实际相邻的微胶囊70a之间密接,所以显示区域被微胶囊70a占满而无间隙地被覆盖。在微胶囊70a中封入具有分散剂71、电泳粒子72等的电泳分散液73。
以下说明具有分散剂71、电泳粒子72等的电泳分散液73。
电泳分散液73是将电泳粒子72分散在由染料染色的分散剂71中制成的。
电泳粒子72是由无机氧化物或无机氢氧化物组成的直径0.01~10微米左右的大体球状微粒,具有与上述分散剂71不同的色调(包括白色和黑色)。在由氧化物或氢氧化物这样组成的电泳粒子72上存在固有的表面等电点,其表面电荷密度(带电量)因分散剂71的氢离子指数pH而变。
这里所述表面等电点是指,用氢离子指数pH表示水溶液中两性电解质电荷的代数和为0状态的指标,例如,当分散剂71的pH等于电泳粒子72的表面等电点的情况下,粒子的实际电荷将等于0,粒子对于外部电场变成没有反应的状态。而且当分散剂71的pH比粒子的表面等电点低的情况下,粒子表面根据下式(1)而带有正电荷。反之,当分散剂71的pH比粒子的表面等电点高的情况下,粒子表面根据下式(2)而带有负电荷。
PH低: ...(1)
PH高: ...(2)
另外,当分散剂71的pH与粒子表面的等电点之差增大的情况下,根据反应式(1)或(2)粒子的带电量将增加,但是此差值一旦达到所定数值以上就会大体饱和,pH即使在其上变化带电量也不变。据认为此差值虽然因粒子的种类、大小和形状而异,但是若处于大约1以上,则粒子的带电量将大体饱和。
作为上述电泳粒子72,例如可以使用二氧化钛、氧化锌、氧化镁、铁丹、氧化铝、黑色次亚氧化钛、氧化铬、一水软铝石、FeOOH、二氧化硅、氢氧化镁、氢氧化镍、氧化锆、氧化铜等。
而且这种电泳粒子72,不仅单独以微粒形式,而且还能以实施了各种表面改质的状态下使用。作为这种表面改质的方法,例如有用丙烯树脂、环氧树脂、聚酯树脂、聚氨酯树脂等聚合物对粒子表面进行涂敷处理的方法,利用硅烷系、钛酸盐系、铝系、氟系等偶合剂进行偶合处理的方法,或利用丙烯系单体、苯乙烯系单体、环氧系单体、异氰酸酯系单体等单体进行接枝聚合处理的方法等,这些处理可以单独进行或者两种以上组合进行。
分散剂71可以使用烃类、卤代烃类、醚类等非水系有机溶剂,而且可以由醇溶黑、油黄、油蓝、油绿、瓦利不褪蓝(Valifast Blue)、马克劳莱克斯蓝(Marcrolex Blue)、油棕、苏丹黑(Sudan Black)、不褪橙(FastOrenge)等染料而被染色,呈现出与电泳粒子72不同的色调。
如图6所示,将FPC50连接在电路基板10的外部端子35上。
上述FPC50,是具备驱动电路基板10的有机晶体管10a(参见图2)用的驱动电路(未图示)的电路基板,通过将电力供给电路基板10的源线,而且将驱动信号供给栅极线34a,能够驱动有机薄膜晶体管10a。
将FPC50连接在电路基板10时,利用光刻法和蚀刻法将外部端子35上的半导体层31和层间膜32和保护膜40剥离后,借助于各向异性导电膜(ACF)或各向异性导电糊(ACP)连接。
对于电光学装置的制造方法而言,采用上述导电部300的形成方法时,由于具备可靠性高的导电部300,而且防止连接栅电极34和栅极线连接部35的栅极线34a的断线,所以能够提高被制造的电泳装置200本身的可靠性。
Claims (6)
1.一种接触孔的形成方法,是在基板上形成第一电极、在该第一电极上形成层间膜、在该层间膜上形成第二电极,借助于接触孔将所述第一电极与所述第二电极导通的电路基板的所述接触孔的形成方法,
其特征在于,其中具备:
在所述层间膜中插入含有溶剂的针,用所述溶剂将所述层间膜溶解,形成所述接触孔的工序。
2.一种电路基板的制造方法,是在基板上形成第一电极、在该第一电极上形成层间膜、在该层间膜上形成第二电极,借助于接触孔将所述第一电极与所述第二电极导通的电路基板的制造方法,
其特征在于,其中具备:
在所述层间膜中插入含有溶剂的针,用所述溶剂将所述层间膜溶解,形成所述接触孔的工序,和
向所述接触孔内注入导电性材料的工序。
3.根据权利要求2所述的电路基板的制造方法,其特征在于,形成所述接触孔的工序,是用多个所述针同时形成多个所述接触孔的工序。
4.根据权利要求2或3所述的电路基板的制造方法,其特征在于,所述导电性材料借助于液滴喷出法注入。
5.根据权利要求2或3所述的电路基板的制造方法,其特征在于,其中还具备在层间膜上形成兼作有机晶体管的栅电极用的第二电极的工序。
6.一种电光学装置的制造方法,其特征在于,其中采用权利要求2~5中任何一项所述的电路基板的制造方法。
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CN105552028A (zh) * | 2016-02-18 | 2016-05-04 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板及显示装置 |
US10254609B2 (en) | 2016-02-18 | 2019-04-09 | Boe Technology Group Co., Ltd. | Array substrate including pixel electrode and drain electrode in direct contact to each other, and method of manufacturing the same, display panel, and display device |
CN110959313A (zh) * | 2017-06-29 | 2020-04-03 | 奥钢联钢铁公司 | 用于在覆有覆层的板材上建立电联接接触部的设备和方法 |
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KR100690546B1 (ko) | 2007-03-09 |
CN100394558C (zh) | 2008-06-11 |
TW200625408A (en) | 2006-07-16 |
US7199049B2 (en) | 2007-04-03 |
US20060024957A1 (en) | 2006-02-02 |
KR20060049801A (ko) | 2006-05-19 |
US7459793B2 (en) | 2008-12-02 |
TWI292180B (en) | 2008-01-01 |
KR20060103484A (ko) | 2006-10-02 |
JP2006041180A (ja) | 2006-02-09 |
JP3879751B2 (ja) | 2007-02-14 |
KR100690548B1 (ko) | 2007-03-12 |
US20060263945A1 (en) | 2006-11-23 |
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