CN1725457A - 除去半导体器件的焊盘区中的晶格缺陷的方法 - Google Patents
除去半导体器件的焊盘区中的晶格缺陷的方法 Download PDFInfo
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- CN1725457A CN1725457A CN 200410053074 CN200410053074A CN1725457A CN 1725457 A CN1725457 A CN 1725457A CN 200410053074 CN200410053074 CN 200410053074 CN 200410053074 A CN200410053074 A CN 200410053074A CN 1725457 A CN1725457 A CN 1725457A
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CNB2004100530748A CN100362638C (zh) | 2004-07-22 | 2004-07-22 | 除去半导体器件的焊盘区中的晶格缺陷的方法 |
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CNB2004100530748A CN100362638C (zh) | 2004-07-22 | 2004-07-22 | 除去半导体器件的焊盘区中的晶格缺陷的方法 |
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CN1725457A true CN1725457A (zh) | 2006-01-25 |
CN100362638C CN100362638C (zh) | 2008-01-16 |
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CNB2004100530748A Expired - Fee Related CN100362638C (zh) | 2004-07-22 | 2004-07-22 | 除去半导体器件的焊盘区中的晶格缺陷的方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101295656B (zh) * | 2007-04-24 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN101593711B (zh) * | 2008-05-30 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | 减少芯片焊盘区晶格缺陷形成的方法及相应焊盘形成方法 |
CN103545163A (zh) * | 2012-07-10 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | 具有氟残留或氯残留的半导体结构的处理方法 |
CN104952749A (zh) * | 2014-03-26 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 一种焊盘缺陷的检测方法 |
CN108878350A (zh) * | 2017-05-09 | 2018-11-23 | 中芯国际集成电路制造(上海)有限公司 | 金属层结构及其制作方法、半导体结构及其制作方法 |
CN111276399A (zh) * | 2020-02-19 | 2020-06-12 | 武汉新芯集成电路制造有限公司 | 焊盘结晶缺陷的返工方法及半导体器件 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2295541A1 (en) * | 1997-05-23 | 1998-11-26 | Sammy K. Brown | A system and method for packaging integrated circuits |
US20030196681A1 (en) * | 2002-04-23 | 2003-10-23 | Ching-Ping Wu | Eliminating residual polymer in the cleaning process of post pad etching |
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2004
- 2004-07-22 CN CNB2004100530748A patent/CN100362638C/zh not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101295656B (zh) * | 2007-04-24 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
CN101593711B (zh) * | 2008-05-30 | 2012-05-09 | 中芯国际集成电路制造(上海)有限公司 | 减少芯片焊盘区晶格缺陷形成的方法及相应焊盘形成方法 |
CN103545163A (zh) * | 2012-07-10 | 2014-01-29 | 中芯国际集成电路制造(上海)有限公司 | 具有氟残留或氯残留的半导体结构的处理方法 |
CN104952749A (zh) * | 2014-03-26 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 一种焊盘缺陷的检测方法 |
CN108878350A (zh) * | 2017-05-09 | 2018-11-23 | 中芯国际集成电路制造(上海)有限公司 | 金属层结构及其制作方法、半导体结构及其制作方法 |
CN108878350B (zh) * | 2017-05-09 | 2020-11-03 | 中芯国际集成电路制造(上海)有限公司 | 金属层结构及其制作方法、半导体结构及其制作方法 |
CN111276399A (zh) * | 2020-02-19 | 2020-06-12 | 武汉新芯集成电路制造有限公司 | 焊盘结晶缺陷的返工方法及半导体器件 |
CN111276399B (zh) * | 2020-02-19 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | 焊盘结晶缺陷的返工方法及半导体器件 |
Also Published As
Publication number | Publication date |
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CN100362638C (zh) | 2008-01-16 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
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Effective date of registration: 20111202 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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