CN1722396A - 用于导线键合的毛细尖管 - Google Patents
用于导线键合的毛细尖管 Download PDFInfo
- Publication number
- CN1722396A CN1722396A CNA200510076820XA CN200510076820A CN1722396A CN 1722396 A CN1722396 A CN 1722396A CN A200510076820X A CNA200510076820X A CN A200510076820XA CN 200510076820 A CN200510076820 A CN 200510076820A CN 1722396 A CN1722396 A CN 1722396A
- Authority
- CN
- China
- Prior art keywords
- bonding
- point pipe
- terminal
- diameter
- pipe according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48455—Details of wedge bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
Abstract
本发明提供了一种用于在导线键合过程中使键合导线变形到键合表面的尖管末端,其包含有:底面,其沿着该尖管末端的内缘,以靠着键合表面压入该键合导线;外径,其沿着该尖管末端的外缘;还包括第一斜面,其相邻于该底面并倾斜地延伸到该底面;以及第二斜面,其相邻于该第一斜面,并倾斜地延伸到该第一斜面。
Description
技术领域
本发明涉及一种用于传送键合导线的毛细尖管(capillary),尤其是指一种用于通过键合(bonding)的方式,如通过应用超声波能量,而将导线连接到半导体器件上的毛细尖管。
背景技术
在半导体器件的装配过程中,将半导体芯片或者集成电路晶粒放置于基底如引线框上,然后使用导电键合导线电气连接该晶粒和基底通常是必要的。在大功率(high-power)的集成电路封装件中,通常使用厚(heavy)的铝导线以在该晶粒和基底之间形成连接和运载电流。这些铝导线通常具有5毫英寸(mils)及以上的直径,其直径可达到20毫英寸之宽。该铝导线较适宜地通过使用楔形键合(wedgebonding)的方式被键合到每个晶粒和基底的焊接盘上。
现有的厚铝导线的楔形键合存在一些不足。首先,厚导线楔形键合机器的成本昂贵,其能达到相当的球形键合机成本的3倍以上。第二,楔形键合机器的产能很低,同时其通过楔形键合焊接单根导线所花费的时间和相类似的球形键合机相比较能长达3倍以上。因此,对于集成电路装配机构而言,使用铜导线来代替铝导线是具有经济意义的,因为铜导线更加便宜和更适于球形焊接。因此,使用铜球形键合机器替代厚铝楔形键合机器是有经济上的和其他的好处。
在楔形键合中,由于第一和第二键合二者是以相同的方式形成的,当导线的截面面积在整个导线上大体相同时,贯穿整个导线全长的导线载流量没有实质性的变化。因此,在第一焊接盘处第一楔形键合的拉力强度(pull strength)和第二焊接盘处第二楔形键合的拉力强度相比不存在有意义的差别。但是,在球形焊接中,第一键合从焊球(ball)中形成,而第二键合是通过在毛细尖管和键合表面之间压入导线产生具有减小的截面面积的平缓区域而实现的,现称之为针脚式键合(a stitch bond)。因此第一键合的球形焊接区域处的导线载流量高于第二键合的针脚式键合区域处的导线载流量,此处导线的截面面积最小。这样该针脚式键合处存在载流瓶颈。而且,截面面积越小意味着越小的导线键合拉力强度位于该针脚式键合处。
目前,铜球焊接通常限定导线直径大约为2毫英寸(mils)(约50微米)以及以下。对于导线直径大于2毫英寸的导线铜球焊接而言,在针脚式键合处缺少针脚拉力强度(stitch pull strength)和引起更大电阻的导线不均匀性将导致更大的操作问题。在针脚式键合位置处加大导线的截面面积以降低瓶颈影响和提高针脚式键合处的拉力强度是令人期望的。
图1所示为现有技术中毛细尖管100的侧视剖面图。该毛细尖管100具有尖管末端102(capillary tip),其通过该尖管末端102中部的尖管孔洞106进给键合导线104。在该尖管末端102的基座上设有底面108,其有助于将键合导线104压入到键合表面上。相邻于该底面108处是尖管末端溢出表面110(sloping capillary tip face),其通向该尖管末端102的外径112(outer radius)。该尖管末端溢出表面110相对于水平的键合表面形成有表面夹角A0。
通过该尖管末端102使得导线104抵靠于待键合表面,通常为“引线”或“第二键合表面”,而变形构成针脚式键合,藉此产生楔形形状的键合。针脚式键合的上部顺沿着尖管末端溢出表面110和该尖管末端102的外径112的轮廓线(contour)。该针脚(stitch)下方被焊接或键合的实际区域依赖于该尖管末端的表面结构、所使用的键合参数(超声波能量,键合时间,键合力和键合阶段温度)和被键合材料的键合能力。该尖管末端溢出表面110较小的表面夹角A0将会导致薄于(thinner)具有较大表面夹角的尖管末端溢出表面110的针脚的生成。而且,仅仅增加表面夹角A0获得更厚的针脚会减少键合强度和导致不可靠的键合。
图2所示为由图1中毛细尖管所形成的针脚式键合的侧视剖视图。针脚式键合在导线首先遇到键合表面处的选定点的导线厚度X-X是39微米。由于厚导线的这种导线厚度,可能产生前述的关于拉力强度和载流量方面的问题。
在针脚式键合位置处提高导线拉力强度的一种现有的方法描述于日本专利公开号JP2001-291736,发明名称为“用于导线键合的毛细尖管”,该公开文件公开了一种具有朝下的锥形形状(cone shape)的毛细尖管。该毛细尖管的引导端分两个阶段形成。该引导端具有用于着手细线(leading out a fine wire)的底面,该底面的端缘被用于切割该细线。相邻于该端缘也设置有类似台阶的外部区域。当使用超声波焊接切割细线时,细线靠近于切割末端的部分同时被该类似台阶的外部区域压入。
但是,该发明被假定应用于键合薄金线(thin gold wires),尤其是10-20微米直径的金线,不是厚线(heavy)。虽然具有正交方向的该类似台阶的外部区域计划在楔形键合压入导线并使之变形以有助于加强对于导线末端的键合黏着,但是在毛细尖管的底面处相对平整的接触会相当突然地(abruptly)切割导线。由于针脚式键合和键合表面之间的接触区域是决定针脚拉力强度的因素之一,所以该毛细尖管的平整底面限制了针脚式键合和晶粒或基底的键合表面之间的接触区域,该针脚式键合的针脚外形(stitch profile)的末端仍然相对细小。
而且,该被形成的针脚式键合具有阶梯形状,因为其外围表面分别平行于和垂直于底面,这降低了导线的均匀性。由于该阶梯的尖锐垂直端缘引起了针脚式键合中的、将在后续操作周期中导致破碎的微裂缝,所以可能存在在键合中形成的机械弱点。该毛细尖管的尖锐端缘将会导致导线材料的很快速生成,其导致键合中针脚拉力强度更低和不一致。同时缺少了该针脚式键合的载流量的均匀性。
发明内容
因此,本发明的目的是提供一种用于快速而又准确地测量接合工具定位的传感器,而克服上述现有技术中的一些缺点。
根据本发明的第一方面,提供了一种用于接合工具定位的尖管末端,其包括:压力式传感器,其被装配以用于测量由接合工具在该压力式传感器上所产生的压力;其中该压力式传感器包含有多个压力感测部位,每个感测部位被用来各自检测来自该接合工具的一部分的、作用于该感测部位的许多压力。
根据本发明的另一方面,其提供了一种用于接合工具定位的方法,包括以下步骤:提供压力式传感器,该压力式传感器包含有多个压力感测部位,每个感测部位被用来分别检测来自该接合工具的一部分的、作用于该感测部位的许多压力。使该接合工具在压力式传感器上产生压力;测量该由接合工具在压力式传感器上产生的压力;根据由每个感测部位所测量的许多压力,调整该接合工具的定位。
通过附图及其所说明的一个实施例可以方便和详细地描述本发明。附图和有关的说明书的特性不应该被理解为代替权利要求所定义的本发明的宽特征的共性。
附图说明
根据本发明较佳实施例的尖管末端和方法的示例现参见附图进行说明,其中:
图1所示为现有技术中毛细尖管的侧视剖面图。
图2所示为由图1中现有毛细尖管所形成的针脚式键合的侧视剖视图。
图3是根据本发明第一较佳实施例所述的毛细尖管的侧视剖视图。
图4是布置于印刷电路板上的聚酰亚胺膜层的平面示意图,以用于检测压力式传感器的输出;
图4是由图3中毛细尖管所形成的针脚式键合的侧视剖视图;以及
图5所示为根据本发明第二较佳实施例所述的毛细尖管的侧视剖视图。
具体实施方式
图3是根据本发明第一较佳实施例所述的毛细尖管10的侧视剖视图。该毛细尖管10包含有尖管末端12,其通过倒角孔洞(chamfered hole)16将键合导线14进给到键合位置。当针脚式键合形成于该键合位置之后,尖管末端12的底面18可有效压入该键合导线14并使之变形。该键合导线较适宜地具有不少于3毫英寸(76.2微米)的直径和较适宜地由铜材料制成。
代替现有技术中出现的简单的尖管末端溢出表面110(见图1),该尖管末端12包含有相邻于底面18的并倾斜地延伸到底面18的第一斜面20、相邻于并倾斜地延伸于第一斜面20的第二斜面22。在本实施例中,第二斜面22包括一大体平缓的表面。沿着尖管末端12外缘的外径24邻接于该第二斜面22设置。
第一和第二斜面20、22相交点距底面18所在平面的高度D1较适宜地是在键合导线14的导线直径WD的0.1倍至0.5倍之间,即:0.1WD≤D1≤0.5WD。高度D1可更加合适地如此设置:0.3WD≤D1≤0.4WD。底面18的外周的直径D3较适宜地位于11/2WD和3WD之间,即:11/2WD≤D3≤3WD。直径D3可更加合适地如此设置:2WD≤D3≤21/2WD。
包含有曲面的外径24较适宜地具有半径R,其中0.4WD≤R≤1WD。半径R可更加合适地如此设置:0.5WD≤R≤0.8WD。
第二斜面22相对于通常为水平的键合表面的夹角A1较适宜地在4度至11度之间。夹角A1可更加合适地在6度至10度之间。第一斜面20相对面之间的界面间夹角A2较适宜地在70度至120度之间。夹角A2可更加合适地在80度至100度之间。
图4是由图3中毛细尖管所形成的针脚式键合的侧视剖视图。在针脚式键合的选定点处的导线厚度X’-X’为61微米,在该选定点处键合导线14首先接触键合表面(为了便于比较,该点和图2中所选定的点相同)。因此,使用本发明较佳实施例所述的毛细尖管10,在该选定点处的导线厚度从39微米增长到61微米。使用这种导线厚度,由于拉力强度和载流量的问题得到显著的降低。
图5所示为根据本发明第二较佳实施例所述的毛细尖管30的侧视剖视图。该毛细尖管30同样具有包含有倒角孔洞16的尖管末端12,以用于将键合导线14进给到键合位置。底面18相邻于倒角孔洞16设置。
相邻于底面18,存在有第一斜面20,其相邻于并倾斜延伸到底面18。第二斜面,在本实施例是以凹槽26的形式,相邻于并以一倾斜角延伸到第一斜面20。第二斜面或凹槽26相邻于尖管末端12的外径(outside radius)24成形设置。第一和第二实施例毛细尖管10、30的主要差别是第二斜面是以凹槽26的形式还是大体扁平的溢流表面22。
凹槽26较适宜地具有半径R1,其中0.25WD≤R1≤0.75WD。凹槽26的半径R1可更加合适地如此设置:0.35WD≤R1≤0.55WD。外径24较适宜地具有半径R2,其中0.25WD≤R2≤0.75WD。第二斜面22的半径R2可更加合适地如此设置:0.35WD≤R2≤0.55WD。如果R2太低,那么可能导致虚弱的针脚式键合。
外径24的最低点距底面18所在平面的高度D2较适宜地在导线直径WD的0.2倍和一直到WD的0.4倍之间,即:0.2WD≤D2≤0.4WD。深度D2可更加合适地如此设置:0.2WD≤D2≤0.3WD。底面18的外周的直径D4较适宜地在11/2WD和3WD之间,即:11/2WD≤D4≤3WD。直径D4可更加合适地如此设置:2WD≤D4≤3WD。
使用本发明第一实施例所述的毛细尖管10,针对具有直径6毫英寸和截面面积18232.22平方微米的键合导线完成电阻比较。该导线具有5mm的长度和0.9269μΩ(μOhm)的平均阻抗。如下表A中所表明的,发现由该毛细尖管10所完成的针脚式键合具有的电阻比图1所述的现有的毛细尖管100的低27%。
表A
毛细尖管结构 | 针脚宽度(μm) | 针脚厚度(μm) | 截面面积(μm2) | 阻抗(R)(μΩ) |
传统 | 275.89 | 39.39 | 10,867.46 | 1.5551 |
本发明 | 245.695 | 60.61 | 14,891.57 | 1.1349 |
而且,也发现载流量毛细尖管10比现有的毛细尖管100高37%,如下表B中所表明的:
表B
毛细尖管结构 | 针脚截面面积(μm2) | 导线长度(mm) | 熔断时间(s) | 熔断电流(A) |
传统 | 10,867.46 | 5 | 5 | 28.72 |
本发明 | 14,891.57 | 5 | 5 | 39.36 |
同样可以发现,针对每个传统结构和按照本发明较佳实施例所述的结构,在基于共计36根导线所进行的针脚拉力测试(stitch pull tests)中,毛细尖管10能够实现360.077g的平均针脚拉力强度,而现有的毛细尖管100能够实现260.427g的平均针脚拉力强度,因此,通过使用本发明较佳实施例所述的毛细尖管10导致针脚拉力强度的平均增长约为100g。
在此所介绍的发明在所介绍的特性之外还很容易进行变化、修改和/或者添加。可以理解本发明包括所有的落入上述说明书的精神和范围之内的此类变化、修改和/或添加。
Claims (21)
1、一种用于使键合导线变形的尖管末端,其包含有:
底面,其沿着该尖管末端的内缘,以靠着键合表面压入该键合导线;
外径,其沿着该尖管末端的外缘;
第一斜面,其相邻于该底面并倾斜地延伸到该底面;以及
第二斜面,其相邻于该第一斜面,并倾斜地延伸到该第一斜面。
2、根据权利要求1所述的尖管末端,其中:该第二斜面包含有基本平缓的表面。
3、根据权利要求1所述的尖管末端,其中:第一斜面和第二斜面之间相交点距该底面所在平面的高度是在该键合导线的直径的0.1到0.5倍之间。
4、根据权利要求3所述的尖管末端,其中:该高度是在该键合导线的直径的0.3到0.4倍之间。
5、根据权利要求1所述的尖管末端,其中:该底面的外周的直径是在该键合导线的直径的11/2到3倍之间。
6、根据权利要求5所述的尖管末端,其中:该直径是在该键合导线的直径的2到21/2倍之间。
7、根据权利要求1所述的尖管末端,其中:该外径包含有曲面,该曲面的半径是在该键合导线直径的0.4倍和该键合导线直径之间。
8、根据权利要求7所述的尖管末端,其中:该外径包含有半径位于该键合导线直径的0.5倍和0.8倍之间的区域。
9、根据权利要求1所述的尖管末端,其中:该第二斜面相对于键合表面之间的夹角位于4度和11度之间。
10、根据权利要求9所述的尖管末端,其中:该第二斜面相对于键合表面之间的夹角位于6度和10度之间。
11、根据权利要求1所述的尖管末端,其中:该第一斜面相对面之间的界面夹角位于70度和120度之间。
12、根据权利要求11所述的尖管末端,其中:该夹角位于80度和100度之间。
13、根据权利要求1所述的尖管末端,其中:该第二斜面包含有凹槽。
14、根据权利要求13所述的尖管末端,其中:该凹槽包含有半径位于该键合导线直径的0.25倍和0.75倍之间的区域。
15、根据权利要求14所述的尖管末端,其中:该凹槽包含有半径位于该键合导线直径的0.35倍和0.55倍之间的区域。
16、根据权利要求13所述的尖管末端,其中:该外径包含有半径位于该键合导线直径的0.25倍和0.75倍之间的区域。
17、根据权利要求16所述的尖管末端,其中:该外径包含有半径位于该键合导线直径的0.35倍和0.55倍之间的区域。
18、根据权利要求13所述的尖管末端,其中:该外径的最低点距该底面所在平面的高度是在该键合导线的直径的0.2到0.4倍之间。
19、根据权利要求18所述的尖管末端,其中:该外径的最低点距该底面所在平面的高度是在该键合导线的直径的0.2到0.3倍之间。
20、根据权利要求1所述的尖管末端,其中:该键合导线的直径不小于3毫英寸。
21、根据权利要求20所述的尖管末端,其中:该键合导线包含有铜导线。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/877,079 | 2004-06-24 | ||
US10/877,079 US7427009B2 (en) | 2004-06-24 | 2004-06-24 | Capillary for wire bonding |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1722396A true CN1722396A (zh) | 2006-01-18 |
CN100423219C CN100423219C (zh) | 2008-10-01 |
Family
ID=35504526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200510076820XA Active CN100423219C (zh) | 2004-06-24 | 2005-06-17 | 用于导线键合的毛细尖管 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7427009B2 (zh) |
JP (1) | JP2006013512A (zh) |
KR (1) | KR100749691B1 (zh) |
CN (1) | CN100423219C (zh) |
CH (1) | CH698058B1 (zh) |
MY (1) | MY140036A (zh) |
SG (2) | SG118392A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8357998B2 (en) * | 2009-02-09 | 2013-01-22 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
CN102484080B (zh) | 2009-06-18 | 2015-07-22 | 罗姆股份有限公司 | 半导体装置 |
CN102820236B (zh) * | 2011-06-08 | 2015-08-26 | 无锡华润安盛科技有限公司 | 一种预塑封引线框的引线键合方法 |
US8618677B2 (en) | 2012-04-06 | 2013-12-31 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
US9093515B2 (en) * | 2013-07-17 | 2015-07-28 | Freescale Semiconductor, Inc. | Wire bonding capillary with working tip protrusion |
JP6331633B2 (ja) * | 2014-04-17 | 2018-05-30 | 富士電機株式会社 | ワイヤボンディング装置およびワイヤボンディング方法 |
DE112018007032T5 (de) * | 2018-02-07 | 2020-10-29 | Mitsubishi Electric Corporation | Keilwerkzeug, Bondvorrichtung und Bondprüfverfahren |
US20210111146A1 (en) * | 2019-10-10 | 2021-04-15 | Skyworks Solutions, Inc. | Cupd wire bond capillary design |
IT201900024295A1 (it) * | 2019-12-17 | 2021-06-17 | St Microelectronics Srl | Utensile di wire bonding, procedimento e struttura di bond corrispondenti |
US11515284B2 (en) | 2020-07-14 | 2022-11-29 | Semiconductor Components Industries, Llc | Multi-segment wire-bond |
FR3126898B1 (fr) * | 2021-09-15 | 2023-11-24 | St Microelectronics Grenoble 2 | Outil de soudure par fil |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4315128A (en) * | 1978-04-07 | 1982-02-09 | Kulicke And Soffa Industries Inc. | Electrically heated bonding tool for the manufacture of semiconductor devices |
US4415115A (en) * | 1981-06-08 | 1983-11-15 | Motorola, Inc. | Bonding means and method |
US4974767A (en) * | 1988-04-25 | 1990-12-04 | Texas Instruments Incorporated | Double cone wire bonding capillary |
US5183973A (en) * | 1989-08-14 | 1993-02-02 | Santa Barbara Research Center | Flexible cable for interconnecting electronic components |
US5421503A (en) * | 1994-08-24 | 1995-06-06 | Kulicke And Soffa Investments, Inc. | Fine pitch capillary bonding tool |
US5662261A (en) * | 1995-04-11 | 1997-09-02 | Micron Technology, Inc. | Wire bonding capillary |
US6158647A (en) * | 1998-09-29 | 2000-12-12 | Micron Technology, Inc. | Concave face wire bond capillary |
-
2004
- 2004-06-24 US US10/877,079 patent/US7427009B2/en not_active Expired - Lifetime
-
2005
- 2005-06-17 CN CNB200510076820XA patent/CN100423219C/zh active Active
- 2005-06-20 SG SG200503933A patent/SG118392A1/en unknown
- 2005-06-20 SG SG200718824-6A patent/SG138614A1/en unknown
- 2005-06-22 CH CH01060/05A patent/CH698058B1/de unknown
- 2005-06-23 MY MYPI20052875A patent/MY140036A/en unknown
- 2005-06-23 JP JP2005184156A patent/JP2006013512A/ja active Pending
- 2005-06-24 KR KR1020050054831A patent/KR100749691B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20050284913A1 (en) | 2005-12-29 |
SG138614A1 (en) | 2008-01-28 |
JP2006013512A (ja) | 2006-01-12 |
MY140036A (en) | 2009-11-30 |
KR100749691B1 (ko) | 2007-08-17 |
SG118392A1 (en) | 2006-01-27 |
US7427009B2 (en) | 2008-09-23 |
CH698058B1 (de) | 2009-05-15 |
KR20060048506A (ko) | 2006-05-18 |
CN100423219C (zh) | 2008-10-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1722396A (zh) | 用于导线键合的毛细尖管 | |
CN1260797C (zh) | 引线接合方法及引线接合装置 | |
US7416107B2 (en) | Concave face wire bond capillary and method | |
US7500590B2 (en) | Multi-part capillary | |
US5868301A (en) | Semiconductor inner lead bonding tool | |
CN1946504A (zh) | 低回路导线邦定的系统和方法 | |
CN1130306A (zh) | 半导体器件及其制造方法 | |
US5662261A (en) | Wire bonding capillary | |
CN1267236C (zh) | 有效能量传输毛细管 | |
US20050090091A1 (en) | Method of forming multi-piled bump | |
US6352197B1 (en) | Method and apparatus for wire-bonding for electric components | |
US20080054052A1 (en) | Method of manufacturing semiconductor device | |
CN1387258A (zh) | 键合区 | |
JP4105996B2 (ja) | ワイヤボンディング方法 | |
KR100718889B1 (ko) | 투스텝 하이 보틀넥을 갖는 와이어 본딩 캐필러리 | |
US8247272B2 (en) | Copper on organic solderability preservative (OSP) interconnect and enhanced wire bonding process | |
JPH11186315A (ja) | ワイヤボンディング装置及びそれを用いた半導体装置の製造方法 | |
US8138081B2 (en) | Aluminum bump bonding for fine aluminum wire | |
JPH056893A (ja) | キヤピラリ、それによるバンプ製造方法及びそれによる半導体装置 | |
JPH0469942A (ja) | キャピラリー及び半導体装置及びワイヤーボンディング方法 | |
KR20080085687A (ko) | 전극 패턴 및 와이어본딩 방법 | |
KR970007598B1 (ko) | 와이어 본딩방법 | |
JP3146634B2 (ja) | 半導体装置のワイヤボンディング装置及び半導体装置の製造方法 | |
JPH088308A (ja) | ボンディング方法及び半導体装置 | |
KR100460047B1 (ko) | 반도체패키지의 본딩검사방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |