CN1701438A - 封装的微芯片 - Google Patents

封装的微芯片 Download PDF

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Publication number
CN1701438A
CN1701438A CNA2004800011142A CN200480001114A CN1701438A CN 1701438 A CN1701438 A CN 1701438A CN A2004800011142 A CNA2004800011142 A CN A2004800011142A CN 200480001114 A CN200480001114 A CN 200480001114A CN 1701438 A CN1701438 A CN 1701438A
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Prior art keywords
microchip
encapsulation
heat guard
expansion
thermal coefficient
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CNA2004800011142A
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刘易斯·隆
基兰·P·哈尼
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Analog Devices Inc
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Analog Devices Inc
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Publication of CN1701438A publication Critical patent/CN1701438A/zh
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    • B81—MICROSTRUCTURAL TECHNOLOGY
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    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
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Abstract

一种封装的微芯片具有绝热体，该绝热体使从该封装的微芯片的封装到微芯片的应力传输最小化。为此，封装的微芯片包括应力敏感的微芯片和封装，其中所述应力敏感的微芯片具有有底面面积的底面，而所述的封装具有一体形成的绝热体。所述绝热体具有有顶面面积的顶面，该顶面面积小于所述微芯片的底面面积。所述微芯片底面与所述绝热体的顶面相连接。

Description

封装的微芯片
技术领域
一般地，本发明涉及微芯片，特别是，本发明涉及微芯片的封装技术。
背景技术
微电子机械系统(“MEMS”)用于越来越多的应用中。例如，目前普遍将微电子机械系统作为回转仪，用来检测飞机的俯仰角，而且还作为加速计以选择性地展开汽车中的气囊。简言之，这样的微电子机械系统装置通常具有悬垂于基板之上的结构和相关的电子设备，该电子设备既能检测该悬垂结构的运动，又能将所检测的运动数据传递送到一个或多个外部设备(如外部计算机)。该外部设备处理所检测的数据以计算所测得的属性(如俯仰角或加速度)。
该相关的电子设备、基板和和可运动的结构通常形成在一个或多个芯片上(在本文中简称为“芯片”)，该芯片固定在封装内。例如，通常气密地密封芯片的封装可以由陶瓷或塑料制成。该封装包括允许电子设备将运动数据传送到外部设备的互连接。为了将芯片固定在封装内部，该芯片的底面通常粘接在(如用粘合剂或焊料)封装的内表面(如芯片连接焊盘)。因此，基本上芯片的全部底面区域都粘接在封装的内表面上。
然而，当两个表面的温度变化时，会产生一些问题。特别是，由于两个表面通常具有不同的热膨胀系数，该封装会施加一机械应力到芯片的基板上。不希望地，该应力(在本领域称为“线性应力”，且该应力是热引起的)会使基板弯曲或挠曲到一未知的曲率。从而，基板弯曲或挠曲会影响芯片结构的运动和电子设备的功能，由此引起代表所测量属性的输出数据的误差。以同样的方式，机械地引起的施加于封装上的线性应力或扭转应力也能够传送到芯片，从而引起同样不希望的结果。
发明内容
根据本发明的一方面，封装的微芯片具有一个绝热体，该绝热体使从其封装到其微芯片的应力传输最小化。为此，封装的微芯片包括一应力敏感的微芯片和一封装，其中该应力敏感的微芯片具有一个有底面面积的底面，而该封装具有一体形成的绝热体。该绝热体具有一个有顶面面积的顶面，该顶面面积小于该微芯片的底面面积。该微芯片底面与该绝热体的顶面相连接。
说明性地，绝热体和封装由相同的材料制成。例如，该绝热体和封装可以由氧化铝制成。在其它实施例中，绝热体和封装由氮化铝(AlN)制成。封装可以具有一个有底面的内腔，而微芯片可以与该内腔的底面隔开。当然，该封装可以是腔型封装和扁平型封装中的一种。在一些实施例中，封装和绝热体具有第一热膨胀系数(“CTE”)，而微芯片具有第二热膨胀系数。该第一和第二热膨胀系数因而可以是基本相同的。
根据本发明的另一方面，封装的微芯片具有一应力敏感的微芯片和一封装，其中，该应力敏感的微芯片具有微芯片热膨胀系数，而该封装具有封装热膨胀系数。另外，该封装的微芯片也包括一绝热体，该绝热体具有绝热体热膨胀系数。该绝热体连接在该应力敏感的微芯片和封装之间。该绝热体热膨胀系数是在热膨胀系数的匹配范围内，这里的热膨胀系数匹配范围具有第一端点和第二端点，该第一端点比该微芯片的热膨胀系数大，而第二端点比该微芯片热膨胀系数小。该第一和第二端点与该微芯片热膨胀系数具有相等的距离。该相等的距离是封装热膨胀系数和微芯片热膨胀系数之差的绝对值。
在一些实施例中，绝热体与封装一体地形成。例如，封装可以由氧化铝或氮化铝制成。
根据本发明的再一方面，封装的微芯片包括一应力敏感的微芯片和2)封装，其中，该应力敏感的微芯片具有1)一个有底面面积的底面，而该封装具有一体形成的装置，该装置用于减小从该封装到该微芯片的应力传输。该一体形成的装置具有一个有顶面面积的顶面，该顶面面积小于微芯片的底面面积。该微芯片底面与该一体形成的装置的顶面相连接。
附图说明
从下面参照附图对本发明的的进一步描述中将会更加充分地理解本发明的前述和优点，其中：
图1示意性地示出根据本发明的说明性实施例可以制造的封装的微芯片的局部剖视图；
图2示意性地示出图1所示的封装的微芯片的一个实施例的沿线X-X的截面图；
图3示出制造图1和2所示的封装的微芯片的过程；
图4示意性地示出图1所示的封装的微芯片的另一个实施例的沿线X-X的截面图。
具体实施方式
在本发明的说明性实施例中，封装的微芯片(如微电子机械系统，在本文中也称作“MEMS”)包括将微芯片固定在封装内部的绝热体。选择绝热体的材料和/或尺寸以减小由封装引起的微芯片的应力(如线性应力和扭转应力)。在说明性的实施例中，该绝热体与封装成一体，从而不需要将绝热体粘接于封装。这些或其它一些实施例的细节将在下文中讨论。
图1示意性地示出了封装的微芯片10的局部去掉的等轴立体图，该封装的微芯片10可以用于本发明的不同实施例。在说明性的实施例中，该封装的微芯片10是作为回转仪的微电子机械系统装置。因此，为了说明的目的，在本文中将不同的实施例作为微电子机械系统回转仪讨论。因此，将在图1、2和4中所示的微电子机械系统装置称为回转仪10。然而，应当注意，将不同实施例作为微电子机械系统回转仪讨论仅是示例性的，因而，将不同实施例作为微电子机械系统回转仪讨论并不是想限制本发明的所有实施例。因此，一些实施例可以用于其它类型的微芯片装置，如集成电路。另外，本发明的实施例可以用于其它类型的微电子机械系统装置，如以微电子机械系统为基础的光学转换装置和以微电子机械系统)为基础的加速计。此外，本发明的实施例可以用于安装在封装中的微芯片装置，这些封装并没有气密密封，如空腔塑料封装等。
在图1中所示的回转仪10包括常规封装12、气密密封该封装12的盖14、以及固定在密封的内部32内的常规的回转仪芯片(die)16。回转仪芯片16包括已知的机械结构和测量给定轴线中角速率的电子设备(在下文中将参考图2进行讨论)。从封装12中延伸出的多个引线22与回转仪16电连接，从而允许在回转仪电子设备和外部装置(如计算机)之间进行电通信。
回转仪芯片16粘接在与封装12一体形成的绝热体24上，而不是直接粘接在该封装12的内部表面。换句话说，作为说明，绝热体24由与用于形成封装12的同一件材料制成(如压制成)。更具体地说，图2示意性地示出图1所示的封装的微芯片10沿线X-X的截面图。该图清楚地示出了封装12和该封装的相应盖14、芯片16和绝热体24。
如上所述，芯片16包括常规的硅微电子机械系统结构18，其机械地检测角度旋转，还包括附属的电子设备20。说明性地，这样的结构18和电子设备20(都示意性地示出在图2中)形成在绝缘硅晶片上，该绝缘硅片晶片在一对硅层之间具有一氧化层。其中，作为例子，该微电子机械系统结构18可以包括一个或多个振动质量，这些振动质量通过多次弯曲而悬垂在硅基板26上方。该结构18也可以包括梳状驱动器和传感装置，用于驱动振动质量和检测振动质量的运动。因此，其中，电子设备20可以包括与梳状驱动器和传感装置连接的的驱动和传感电子设备、以及信号传输电路。金属线23用引线22与附属的电子设备20连接。示例性的微电子机械系统回转仪在两个同时待审查的美国临时专利申请中更详细地讨论，这两个申请的序列号为60/364,322和60/354,610，这两个申请都转让给麻萨诸塞州诺伍德(Norwood)的Analog Device股份有限公司s。所述临时专利的公开内容全部作为参考包含在本文中。
在可选的实施例中，微电子机械系统结构18和附属电子设备20处于不同的芯片上。例如，具有微电子机械系统结构18的芯片16可以通过第一绝热体24安装在封装12上，而具有附属电子设备20的芯片16可以通过第二绝热体24安装在封装12上。可选地，这两个芯片都可以安装在同一绝热体24上。有时，其中一个芯片16(如应力敏感的芯片16)可以安装在绝热体24上，而另一个芯片16(如非应力敏感的芯片16)可以直接安装在封装12上。然而，应当注意的是，说明性地实施例的原理将应用于这样的实施例。
象微芯片和/或集成电路这样的芯片16对于线性应力和扭转应力中任何一个或两者都是敏感的。对于这一点，术语“敏感的”通常意指，当遭受应力时，可以兼顾在芯片16上的结构18和/或电子设备20的运行。例如，如上所述，施加到芯片16上的应力会引起弯曲，使物块悬垂至弯曲或压缩。结果，该物块不会在规定的速率和角度振动，因此产生了正交(quadrature)问题。作为另一个例子，该梳状驱动器将会方向偏离，或电子设备20会损坏。这些示例性的问题中任何一个都会不希望地破坏由微电子机械系统芯片16产生的结果数据。因此，为了这些原因，芯片16或其它的微芯片称作是“应力敏感的”。
为了减轻这些与应力相关的问题，在说明性实施例中，绝热体24和芯片16的粘接表面的尺寸做成使直接接触最小。特别是，绝热体24具有粘接在芯片16的底面30上的顶面28。绝热体顶面28具有比芯片16的底面30小的表面面积，从而在芯片底面30和封装12的内表面之间形成空间。因此，芯片底面30的比较大的部分不会遭受由封装12产生的直接扭转应力。
形成在芯片底面30和封装12的内表面之间的空间可以以多种方式形成。例如，绝热体24可以在封装12内表面的上方升高芯片16一些距离(如图2和4所示)。作为另一个例子，可以使封装12的内表面的轮廓构造成以有效地形成绝热体24。在这种情况下，该绝热体24可以将壁延伸进入由封装12的内表面形成的凹处。
在本文中讨论的选择绝热体24和芯片16的相关尺寸的过程称为“匹配”。从质量方面看，绝热体24和芯片16的相关尺寸应当选择成使绝热体24具有足以支撑芯片16的最小的表面面积。如果绝热体24的尺寸相对于芯片16来说太小，芯片16将会倾斜，或芯片16的端部会向下下倾。
因此，封装的芯片16的不同部件的示例性尺寸如下。在图2中，X方向指长度，Y方向指高度(厚度)，而Z方向(即未示出但与X和Y方向垂直)指宽度。
封装12：高：0.12英寸；
芯片16：长度：0.170英寸；宽度：0.140英寸；高度：0.027英寸；
绝热体24：长度：0.04英寸；宽度：0.04英寸；高度：0.026英寸。
具有这些相关尺寸的封装的微芯片将会满意地完成本文所述的目的。当然，这些尺寸仅是为了说明。因而，其它实施例并不限于这些特定的尺寸。因此，具有有不同尺寸的绝热体24、封装12和芯片16的封装的微芯片10在所述的约束条件内将会提供相应的应力衰减。
在说明性的实施例中，粘合剂34将绝热体24粘结到芯片的底面30上。这样的粘合剂34优选地也具有应力吸收性质，因而进一步衰减了所述的应力。在示例性的实施例中，粘合剂34是填充银的玻璃粘合剂材料，例如由加利福尼亚州的圣地亚哥的德克斯特电子设备材料公司(Dexter Electronic Materials of San Diego，California)经销的德克斯特产品号码为QMI3555的产品(Dexter product code numberQMI3555)。德克斯特电子设备材料公司(Dexter Electronic Materials)是德国Loctite公司(Loctite Corporation of Germany)的分公司。
其它类型的材料可以用于将绝热体24粘接到芯片16和封装12上。这样的材料包括其它银玻璃材料、环氧树脂、氰酸脂(cynate？)和硅树脂。高温有机粘结剂，如硅氧烷，也会产生满意的结果。在不同的实施例中，虽然希望，但这些粘结剂不是必需具有应力吸收性质。另外，其它传统方式可以用于将绝热体连接到芯片16和封装12上。因此，粘合剂的讨论是示范性的，且并不是要限制本发明不同实施例的范围。
应当注意到，空腔型封装12的讨论是仅为了特定的实施例。然而，可以将其它不同的实施例用于其它类型的封装12。例如，封装的微芯片10可以用扁平型封装12，其中，盖14或其它装置围绕芯片16密封，从而有效地形成整个装置的内部。因此，不应当将许多实施例限制于空腔型封装12。
除了(或替代)匹配芯片16和绝热体24的相关尺寸之外，一些实施例也将绝热体的材料与芯片16的材料匹配。更具体地说，绝热体24可以由具有热膨胀系数(“CTE”)的材料制成，该材料的热膨胀系数与芯片16的热膨胀系数匹配。换句话说，在说明性的实施例中，绝热体24的热膨胀系数与芯片16的热膨胀系数基本相同。例如，如果芯片16由硅制成，那么绝热体24和封装12的其余部分可以由氮化铝(AlN)制成，该氮化铝(AlN)具有与硅基本相同的热膨胀系数。在其它实施例中，如果芯片16由硅制成，那么绝热体24和封装12的其余部分可以由氧化铝制成(也称“矾土”，并通过化学式Al2O3表示)，该氧化铝的的热膨胀系数与氮化铝的热膨胀系数相比，不如氮化铝的热膨胀系数与硅的热膨胀系数接近。然而，当由氧化铝制成时，优选，芯片16的底面的相关尺寸与绝热体24的顶面的相对尺寸匹配(如上所论述)。
如上所述，说明性地，绝热体24和封装12在这些实施例中是用相同的材料制成，在这些实施例中，绝热体24与封装12是一体的。然而，在可选的实施例中，可以考虑的是，可以用复合材料生产，其中绝热体24具有与封装12不同的热膨胀系数，而绝热体24仍然与封装12是一体的。在该可选实施例中，绝热体24可以由与封装12其余部分不同的材料制成。
图3示出了组装在图1和2中所示的封装的微芯片10的示范性过程。该过程以步骤302开始，其中基板26的底面30粘接到绝热体24的上表面28上。然后，芯片16与封装12相互电连接(步骤302)。下一步，在步骤304，将盖14固定于封装12上，这样就密封了内部32。如果希望，在盖14固定于封装12上之前可以将气体注入封装内部32。
在一些实施中，绝热体24并不与封装12一体形成。特别是，如图4所示，绝热体24是与封装12分离的元件。在这样的实施例中，绝热体24可以用与制造封装12的材料相同或不同的材料制造。例如，绝热体24可以由具有这样的热膨胀系数的材料制成，该热膨胀系数与芯片16的热膨胀系数相匹配。因为绝热体24是分离元件，所以绝热体24可以以任何现有技术中已知的方式与封装12连接，例如用上面所述中粘合剂。对于其它关于该实施例的其他细节，见上述美国专利申请10/234,215号。
为减少这个实施例或相关实施例中应力，希望绝热体24具有这样的热膨胀系数，该热膨胀系数在芯片16的热膨胀系数左右的范围内。该范围具有这样的边界，该边界是大于和小于芯片的热膨胀系数的计算量。该计算量定义为芯片16的热膨胀系数与封装12的热膨胀系数之差的绝对值。这个范围在本文中称为“热膨胀系数)匹配范围”。
例如，如果芯片16由硅制成(硅具有每摄氏度4ppm的热膨胀系数)，且封装12由氧化铝制成(氧化铝具有每摄氏度约7ppm的热膨胀系数)，那么说明性地绝热体24由这样的材料制成，该材料的热膨胀系数在每摄氏度1ppm到每摄氏度约7ppm之间。在这种情况下，虽然在绝热体24由具有每摄氏度约4ppm的热膨胀系数的材料制造时预料得到更好的结果，但如果材料的热膨胀系数在所述范围内，也会出现改进的结果(与所用绝热体材料与封装12的材料相同时相比)。
作为另一个例子，如果封装材料的热膨胀系数与芯片的热膨胀系数相等，那么热膨胀系数)的有效匹配范围为零。在这种情况下，如果绝热体材料具有与芯片材料相同的热膨胀系数，那么认为绝热体的热膨胀系数是在热膨胀系数匹配范围内。如上述讨论的那样，当绝热体24和芯片16的尺寸匹配时也预期得到改进的结果。
虽然，前面公开了本发明的不同示例性实施例，但对于本领域技术人员来说，进行不同的改变和改进是显然的，这些改变和改进将在不脱离本发明的真正范围的情况下达到本发明的一些优点。

Claims (20)

1.一种封装的微芯片，包括：
应力敏感的微芯片，所述应力敏感的微芯片具有一个有底面面积的底面；
封装，所述封装具有一体形成的绝热体，所述绝热体具有一个有顶面面积的顶面，所述顶面面积小于所述微芯片的底面面积，
所述微芯片底面连接于所述绝热体的顶面。
2.根据权利要求1所述的封装的微芯片，其中所述绝热体和封装由相同的材料制成。
3.根据权利要求2所述的封装的微芯片，其中所述绝热体和封装由氧化铝制成。
4.根据权利要求2所述的封装的微芯片，其中所述绝热体和封装由氮化铝制成。
5.根据权利要求1所述的封装的微芯片，其中所述封装具有有底面的内腔，所述微芯片与所述内腔的底面隔开。
6.根据权利要求1所述的封装的微芯片，其中所述封装和绝热体具有第一热膨胀系数，所述微芯片具有第二热膨胀系数，所述的第一和第二热膨胀系数基本相同。
7.根据权利要求1所述的封装的微芯片，其中所述封装是腔型封装和扁平型封装中的一种。
8.一种封装的微芯片包括：
应力敏感的微芯片，所述的应力敏感的微芯片具有微芯片热膨胀系数；
封装，所述的封装具有封装热膨胀系数；以及
绝热体，该绝热体具有绝热体热膨胀系数，所述绝热体连接在所述应力敏感的微芯片和封装之间，
所述绝热体热膨胀系数是在热膨胀系数匹配范围内，所述热膨胀系数匹配范围具有比所述微芯片的热膨胀系数大的第一端点，所述热膨胀系数匹配范围具有比所述微芯片热膨胀系数(CTE)小的第二端点，所述第一和第二端点与所述微芯片热膨胀系数具有相等的距离，所述相等的距离是所述封装热膨胀系数和所述微芯片热膨胀系数之差的绝对值。
9.根据权利要求8所述的封装的微芯片，其中所述绝热体与所述封装一体地形成。
10.根据权利要求9所述的封装的微芯片，其中所述封装由氧化铝制成。
11.根据权利要求9所述的封装的微芯片，其中所述封装由氮化铝制成。
12.根据权利要求8所述的封装的微芯片，其中所述封装具有有底面的内腔，所述微芯片与所述内腔的底面隔开。
13.根据权利要求8所述的封装的微芯片，其中所述微芯片具有有底面面积的底面，所述绝热体具有有顶面面积的顶面，所述微芯片底面与所述绝热体的顶面相连接，所述底面面积大于所述顶面面积。
14.一种封装的微芯片包括：
应力敏感的微芯片，所述应力敏感的微芯片具有有底面面积的底面；
封装，所述封装具有一体形成的装置，该装置用于减小从所述封装到所述微芯片的应力传输，所述减小装置具有有顶面面积的顶面，该顶面面积小于所述微芯片的底面面积，
所述微芯片底面与所述减小装置的顶面相连接。
15.根据权利要求14所述的封装的微芯片，其中所述减小装置包括绝热体。
16.根据权利要求14所述的封装的微芯片，其中所述减小装置和封装由相同材料制成。
17.根据权利要求14所述的封装的微芯片，其中所述微芯片是微电子机械系统装置。
18.根据权利要求14所述的封装的微芯片，其中所述封装具有有底面的内腔，所述微芯片与所述内腔的底面隔开。
19.根据权利要求14所述的封装的微芯片，其中所述封装是腔型封装和扁平型封装中的一种。
20.根据权利要求14所述的封装的微芯片，其中所述封装和减小装置具有第一热膨胀系数，所述微芯片具有第二热膨胀系数，所述第一和第二热膨胀系数基本相同。
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