CN100408470C - 带有热应力释放装置的微型芯片 - Google Patents
带有热应力释放装置的微型芯片 Download PDFInfo
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- CN100408470C CN100408470C CNB038210754A CN03821075A CN100408470C CN 100408470 C CN100408470 C CN 100408470C CN B038210754 A CNB038210754 A CN B038210754A CN 03821075 A CN03821075 A CN 03821075A CN 100408470 C CN100408470 C CN 100408470C
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Abstract
一种封装的微型芯片(10)具有应力敏感微型芯片(16),封装件(12),和绝缘体(24),该应力敏感微型芯片具有微型芯片热膨胀系数,该封装件具有封装件热膨胀系数,该绝缘体具有绝缘体热膨胀系数。该绝缘体(24)连接在应力敏感微型芯片(16)和封装件(12)之间。与封装件热膨胀系数相比,微型芯片热膨胀系数更接近绝缘体热膨胀系数。
Description
技术领域
本发明通常涉及微型芯片,特别是,本发明涉及微型芯片的封装技术。
背景技术
微机电系统(“MEMS”)广泛应用于不断增长的用途。例如目前,MEMS作为陀螺仪实施,以便探测飞机的倾角,并且作为加速度计有选择的在汽车内与气囊配置使用。简言之,这种MEMS装置典型的具有悬置在基片上的结构,和相关电子器件,该电子器件既可感知悬置结构的运动,并向一个或更多外部装置(例如外部电脑)传输感知的运动数据。外部装置处理感知的数据,以便计算正在测量的性能(例如倾角或加速度)。
相关电子器件,基片,和可移动的结构通常在一个或多个固定在封装件内的电路小片(die)(这里简称为“电路小片”)上形成,该电路小片。例如,密封着电路小片的该封装件可以由陶瓷或塑料制造。该封装件包括允许电子器件将运动数据传输到外部装置的互连件。为了将电路小片紧固在封装件内,电路小片的底表面通常粘合(例如用粘合剂或焊料)在封装件的内表面(例如模附着垫)。因此,电路小片底表面的基本上全部区域与封装件的内表面结合。
然而,当两个表面的温度改变时,可能带来问题。特别是,由于两表面通常具有不同的热膨胀系数,封装件能够向电路小片的基片施加机械应力。该应力(本领域称之为“线性应力”,这种情况是由于热引起的)不期望地使基片弯曲或挠曲到未知的曲率。结果,基片弯曲或挠曲会影响电路小片结构的运动和电子器件的功能,从而导致表示所测性能(例如加速度)的输出数据错误。相似的方式,施加到封装件上的机械产生的线性或扭曲应力也能够转移到电路小片上,从而导致相同的不期望的效果。
发明内容
根据本发明的一个方面,封装的微型芯片具有一种应力敏感微型芯片,一种封装件,和一种绝缘体,该应力敏感微型芯片具有微型芯片热膨胀系数,该封装件具有封装件热膨胀系数,该绝缘体具有绝缘体热膨胀系数。该绝缘体连接在应力敏感微型芯片和封装件之间。依照说明性的实施例,与封装件热膨胀系数相比,微型芯片热膨胀系数更接近绝缘体热膨胀系数。其中,该绝缘体具有连接到应力敏感微型芯片的底部表面的顶部表面,该绝缘体顶部表面的表面面积比应力敏感微型芯片的底部表面小,从而在该应力敏感微型芯片底部表面和封装件之间形成空间。
在一些实施例中,微型芯片热膨胀系数和绝缘体膨胀系数之间的差别小于微型芯片热膨胀系数和封装件热膨胀系数之间的差别。而且,应力敏感微型芯片可以是MEMS装置,其中应力敏感微型芯片包括悬置在具有基片热膨胀系数的基片上的可移动结构。这种情况下,微型芯片热膨胀系数可以是基片热膨胀系数的函数。
作为例证,应力敏感微型芯片具有微型芯片表面,同时绝缘体也具有绝缘体表面。绝缘体表面可以面向并连接微型芯片的表面。作为例证,绝缘体表面可以仅与微型芯片表面的一部分连接。在其它实施例中,封装件具有封装件表面,并且封装件表面的一部分连接到绝缘体。封装件的表面积大于绝缘体的表面积。其它材料中,封装件包括陶瓷材料。封装微型芯片还包括应力吸收材料,该应力吸收材料将绝缘体固定到封装件。
根据本发明的另一方面,传感器具有电路小片,该电路小片包括从具有基片热膨胀系数的基片悬置的可移动结构,具有绝缘体热膨胀系数的绝缘体,和形成包含电路小片的内腔的封装件。封装件也具有封装件热膨胀系数。绝缘体连接在基片和封装件之间。作为例证,与封装件热膨胀系数相比,基片热膨胀系数更接近绝缘体热膨胀系数。其中,该绝缘体具有连接到电路小片的底部表面的顶部表面,该绝缘体顶部表面的表面面积比电路小片的底部表面小,从而在该电路小片底部表面和封装件之间形成空间。
在一些实施例中,传感器还具有固定在封装件上的盖。该盖密封内腔。该传感器还可以包括将绝缘体固定到封装件上的应力吸收材料。而且,封装件的内腔可具有腔表面,同时基片可具有基片表面。这样,绝缘体在基片表面的一部分和腔表面的一部分之间形成一个空间,其中,电路小片可以是陀螺仪,加速计或其它类型MEMS装置中的其中之一。
附图说明
参考附图,通过下面的进一步描述,本发明的前述优点将得到更全面的认识,其中:
图1示意性地显示可以根据本发明的用作说明的实施例制造的封装微型芯片的局部剖开视图。
图2示意性地显示图1中示出的封装微型芯片沿线2-2截取的的剖面图。
图3显示图1和2中所示的封装微型芯片的制造方法。
具体实施方式
本发明的说明性实施例中,封装微型芯片(例如微型电子机械系统,也被称为“MEMS”)包括将微型芯片固定在封装件内部的绝缘体。选择绝缘体的材料和尺寸,以使由封装件产生的微型芯片应力(例如线性应力和扭曲应力)最小。下面详细描述这个和其它实施例的细节。
图1示意性地显示用于本发明的不同实施例的封装微型芯片10的部分剖开等距视图。在说明性实施例中,封装微型芯片10是作为陀螺仪的MEMS装置。而且,为了说明的目的,这里公开了作为MEMS陀螺仪的不同的实施例。图1和2表示的MEMS装置确定为陀螺仪10。然而,应该注意到,作为MEMS陀螺仪的不同实施例仅是作为典型例,而不希望限制本发明的所有实施例。因此,一些实施例可以应用到其它类型微型芯片装置,例如集成电路中。另外,本发明的实施例可以应用到其它类型的MEMS装置,例如基于MEMS的光开关装置和基于MEMS的加速计。另外,本发明的实施例可以应用在微型芯片装置中,该微型芯片装置安装在未密封着的封装件内,例如空腔塑料封装件等。
图1所示陀螺仪10包括常规封装件12,气密性地密封封装件12的盖14,和固定在密封着的内部32的常规的陀螺仪电路小片16。陀螺仪电路小片16包括公知的机械结构和测量相对于特定轴的角位置的电子器件(以下相对图2讨论)。从封装件12延伸的若干引脚22与陀螺仪电路小片16电连接,以允许在陀螺仪电子器件和外部装置(例如电脑)之间进行电通信。
陀螺仪模16不直接连接封装件12的内表面,而是连接绝缘体24,绝缘体自身连接封装件12的内部32。更特别的是,图2示意性地显示图1的封装微型芯片10沿线2-2的剖面图。该图清晰的显示封装件12和它的相应的盖14,电路小片16和绝缘体24。
以上提到,电路小片16包括常规的硅MEMS结构18,以机械地感知角旋转,还包括附属电子器件20。该结构18和电子器件20(两者在图2中示意地显示)用作说明地在绝缘硅晶片(silicon-on-insulator)上形成,绝缘硅晶片在一对硅层之间有氧化层。作为一实例,尤其是,MEMS结构18可包括一个或多个通过若干挠曲部分悬置在硅基片26上的振动体(vibrating mass)。该结构18也可以包括梳轮驱动和感知设备,以驱动振动体,并且感知其运动。因此,尤其是,电子器件20可以包括驱动和感知电子器件,它们与梳轮驱动和感知设备结合,和信号传输电路。导线23使附属电子器件20与引脚22电连接。典型的MEMS陀螺仪在待审美国临时专利申请60/364,322和60/354,610中详细描述,两者转让给Analog Devices,Norwood公司,马萨诸塞州。公开的两个提到的临时专利公开内容整体在这里提出作为参考。
在可选实施例中,MEMS结构18和附属电子器件20在不同的电路小片上。例如,具有MEMS结构的电路小片16可以通过第一绝缘体24安装在封装件12上,同时具有附属电子器件20的电路小片16可以通过第二绝缘体24安装在封装件12上。可选择的,两个电路小片可以安装到相同的绝缘体24上。在某些情况下,其中的一个电路小片(例如应力敏感电路小片16)可以安装在绝缘体24上,同时,另一个电路小片16(例如非应力敏感电路小片16)可以直接安装在封装件12上。然而,应该注意到用作说明的实施例的原理可应用到这样的实施例。
作为微型芯片和/或集成电路的电路小片16对线性应力和扭曲应力敏感。在上下文中,术语“敏感的”通常意指当承受应力时,在电路小片16上结构18和/或电子器件20的操作能被妥协。例如以上提出的,施加到电路小片16上的应力可以导致悬置振动体的挠曲部分弯曲或压缩。结果,该振动体可能不按指定的比率和角度振动,这样带来转象差问题。作为进一步的实例,梳轮驱动可能不重合,或电子器件20可以受损,任何这些典型的问题不期望地能破坏通过MEMS电路小片16生成的作为结果的数据。而且,因为这些原因,电路小片16或其它微型芯片可以被称为“应力敏感的”。
为解决与应力有关的问题,绝缘体24由具有一定热膨胀系数的材料形成,该热膨胀系数与封装件12的热膨胀系数相比更接近匹配电路小片16的热膨胀系数。换句话说,绝缘体24的热膨胀系数与封装件12的热膨胀系数相比应该更接近电路小片基片26的热膨胀系数。在用作说明的实施例中,封装件12由陶瓷材料形成,例如氧化铝(AL2O3),其通常具有每摄氏度约7ppm的热膨胀系数。而且,在作为说明的实施例中,基片26是硅,其通常具有每摄氏度约4ppm的热膨胀系数。而且,在作为说明的实施例中,绝缘体24的热膨胀系数接近4而不是7。为此,绝缘体24说明性的由硅形成,它精确的与基片26的材料匹配。这样,绝缘体24具有约4的热膨胀系数。而且,绝缘体24和基片26应该基本上以相同的速率响应温度的变化而膨胀和收缩。在可选择的实施例中,绝缘体24由不同于硅的材料形成。然而,说明性的,该材料具有的热膨胀系数相比封装件12的热膨胀系数更接近基片26的热膨胀系数。
尽管这带来有利的结果,然而,绝缘体24仍接触氧化铝封装件12,这样,遭受以上提到的线性应力。然而,绝缘体24减弱了这种应力,减弱程度应该对电路小片性能的影响最小。
在用做说明的实施例中,除了匹配模16和绝缘体的24的材料,还要确定绝缘体的尺寸,以便将扭曲应力的影响减到最小。为此,使绝缘体24和电路小片16的结合表面的尺寸具有接触最小。更特别的是,绝缘体24具有顶面28,该顶面28与电路小片16的底面30结合。绝缘体的顶面28具有的表面积小于电路小片16的底面30的表面积,这样,在电路小片底面30和封装件12之间形成空间。因此,电路小片底面30的较大部分不承受由封装件12产生的正扭曲应力。以基于其热膨胀系数匹配材料的方法类似的方式,选择绝缘体24和电路小片16的相对尺寸的该方法在这里称为“匹配”。
封装模16的不同零部件的典型的尺寸例如下。注意图2,X方向表示长,Y方向表示高(厚度),Z方向(例如,没有显示但垂直于X和Y方向)表示宽。
封装件12:高:0.12英寸
电路小片16:长:0.170英寸;宽:0.140英寸;高:0.027英寸;
绝缘体24:长0.084英寸;宽:0.084英寸;高:0.026英寸
具有这些相对尺寸的封装微型芯片应该满意地实现这里描述的目的。当然,这些尺寸只是示例。因此,其它实施例不限于这些特定尺寸。因此,在以上提到的限制内,封装微型芯片10具有不同尺寸的绝缘体24,封装件12和电路小片16,该封装微型芯片10应该提供对应的应力减弱。在一些实施例中,材料是不匹配的,然而相关的绝缘体24/模16的尺寸如上所述匹配。在其它实施例中,材料是匹配的,然而相关的绝缘体24/模16的尺寸如上所述不匹配。
在作为说明的实施例中,绝缘体24是硅晶片,该硅晶片借助粘合剂34与电路小片底面30和封装件内表面结合。该粘合剂34优选的具有吸收应力性能,这进一步减弱提到的应力。在典型的实施例中,粘合剂34是镀银玻璃粘附材料,例如编号为QMI3555,由加利福尼亚,圣地亚哥的Dexter Electronic Materials分配的Dexter产品,DexterElectronic Materials是德国的Loctite公司的分公司。
其它类型的材料可以用来使绝缘体24与Dexter产品16以及封装件12结合。这样的材料包括其它镀银玻璃材料,环氧树脂类,氰酸盐酯,和硅树脂。在不同的实施例中,尽管希望,但没有必要这些粘接剂具有应力吸收性能。另外,其它常规的装置可以用于使绝缘体24与电路小片16和封装件12连接。因此,粘附剂34的讨论是典型的,并且不希望限制本发明的不同实施例的范围。
在可选实施例中,绝缘体24与电路小片16成整体,因而相同的材料。在其它实施例中,绝缘体24与封装件12成整体(即绝缘体24结合在封装件内)。在这样的实施例中,绝缘体24和封装件12可由具有更接近模16的热膨胀系数的材料制造。例如,封装件12可以由氮化铝(AlN)制造。
图3显示如图1和2所示的封装微型芯片10的典型封装方法。该方法从步骤300开始,其中粘附剂34使绝缘体24与封装件12的内表面结合。如本领域的普通技术人员所知,内表面通常被称为“电路小片附着垫”。该方法继续到步骤302,其中基片26的底面30与绝缘体24的顶面28结合。接着,电路小片16与封装件12电互连(步骤304)。接着,在步骤306,盖14固定到封装件12的顶部,从而来密封内部32。如果需要,在盖14紧固在封装件12上之前,可以将气体注入封装件内部32内。
在可选择的实施例中,步骤300和302以相反顺序实施。换句话说,在这样的实施例中,绝缘体24首先与基片26结合,接着绝缘体24(具有连接的基片26)与封装件12的内部32结合。
尽管这里公开了本发明的不同的典型实施例,本领域的普通技术人员显然可知,在不超出本发明的实质范围的前提下,不同的改变和修改同样可以实现本发明的一些优点。
Claims (19)
1. 一种封装微型芯片,它包括:
具有微型芯片热膨胀系数的应力敏感微型芯片;
具有封装件热膨胀系数的封装件;以及
具有绝缘体热膨胀系数的绝缘体,绝缘体连接在应力敏感微型芯片和封装件之间,
与封装件热膨胀系数相比,微型芯片热膨胀系数更接近绝缘体热膨胀系数;其中
该绝缘体具有连接到应力敏感微型芯片的底部表面的顶部表面,该绝缘体顶部表面的表面面积比应力敏感微型芯片的底部表面小,从而在该应力敏感微型芯片底部表面和封装件之间形成空间。
2. 如权利要求1所述的封装微型芯片,其中,微型芯片热膨胀系数和绝缘体膨胀系数之间的差别小于微型芯片热膨胀系数和封装件热膨胀系数之间的差别。
3. 如权利要求1所述的封装微型芯片,其中,所述应力敏感微型芯片是MEMS装置。
4. 如权利要求3所述的封装微型芯片,其中,所述应力敏感微型芯片包括悬置在基片上的可移动结构。
5. 如权利要求4所述的封装微型芯片,其中,所述基片具有基片热膨胀系数,所述微型芯片热膨胀系数是基片热膨胀系数的函数。
6. 如权利要求1所述的封装微型芯片,其中,所述封装件具有封装件表面,封装件表面的一部分连接到绝缘体,封装件表面积大于绝缘体表面积。
7. 如权利要求1所述的封装微型芯片,其中,所述封装件包括陶瓷材料。
8. 如权利要求1所述的封装微型芯片还包括将所述绝缘体固定到所述封装件的应力吸收材料。
9. 一种传感器,它包括:
包括从基片悬置的可移动结构的电路小片,该基片具有基片热膨胀系数;
具有绝缘体热膨胀系数的绝缘体;以及
形成包含所述电路小片的内腔的封装件,该封装件具有封装件热膨胀系数,
在基片和封装件之间连接的绝缘体,
相比封装件热膨胀系数,基片热膨胀系数更接近绝缘体热膨胀系数;其中
该绝缘体具有连接到电路小片的底部表面的顶部表面,该绝缘体顶部表面的表面面积比电路小片的底部表面小,从而在该电路小片底部表面和封装件之间形成空间。
10. 如权利要求9所述的传感器,其进一步包括:
固定到封装件的盖,该盖密封内腔。
11. 如权利要求9所述的传感器,其中,所述电路小片是陀螺仪和加速计中的一个。
12. 如权利要求9所述的传感器还包括将绝缘体固定到封装件的应力吸收材料。
13. 如权利要求9所述的传感器,其中,所述封装件的内腔具有腔表面,所述基片具有基片表面,所述绝缘体在基片表面的一部分和腔表面的一部分之间形成一个空间。
14. 如权利要求9所述的传感器,其中,所述封装件包括陶瓷材料。
15. 一种封装微型芯片,它包括:
具有微型芯片热膨胀系数的应力敏感微型芯片;
用于封装应力敏感微型芯片的装置,该封装装置具有封装件热膨胀系数;以及
用于将所述应力敏感微型芯片固定到封装装置的装置,该固定装置具有固定装置热膨胀系数,
相比封装件热膨胀系数,微型芯片热膨胀系数更接近固定装置热膨胀系数;
其中,该固定装置具有连接到应力敏感微型芯片的底部表面的顶部表面,该固定装置顶部表面的表面面积比应力敏感微型芯片的底部表面小,从而在该应力敏感微型芯片底部表面和封装件之间形成空间。
16. 如权利要求15所述的封装微型芯片,其中,所述封装装置包括陶瓷封装件。
17. 如权利要求15所述的封装微型芯片还包括将固定装置固定到封装装置的应力吸收材料。
18. 如权利要求15所述的封装微型芯片,其中,所述固定装置在应力敏感微型芯片的一部分和封装装置的一部分之间形成一个空间。
19. 如权利要求15所述的封装微型芯片,其中,所述应力敏感微型芯片包括悬置在基片上的可移动结构。
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US10/234,215 | 2002-09-04 | ||
US10/234,215 US6768196B2 (en) | 2002-09-04 | 2002-09-04 | Packaged microchip with isolation |
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EP (1) | EP1534624A1 (zh) |
JP (1) | JP2005538551A (zh) |
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AU2003270331A1 (en) | 2004-03-29 |
CN1678513A (zh) | 2005-10-05 |
WO2004022477A1 (en) | 2004-03-18 |
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