CN1672215A - 用于多级非易失性集成存储器装置的读出放大器 - Google Patents
用于多级非易失性集成存储器装置的读出放大器 Download PDFInfo
- Publication number
- CN1672215A CN1672215A CNA028230825A CN02823082A CN1672215A CN 1672215 A CN1672215 A CN 1672215A CN A028230825 A CNA028230825 A CN A028230825A CN 02823082 A CN02823082 A CN 02823082A CN 1672215 A CN1672215 A CN 1672215A
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- Prior art keywords
- memory cell
- cascode device
- sensor amplifier
- voltage
- charging circuit
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- 230000015654 memory Effects 0.000 claims abstract description 114
- 230000008929 regeneration Effects 0.000 claims abstract description 12
- 238000011069 regeneration method Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 28
- 230000001172 regenerating effect Effects 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 21
- 230000003321 amplification Effects 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Amplifiers (AREA)
- Warehouses Or Storage Devices (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/989,996 | 2001-11-20 | ||
US09/989,996 US6747892B2 (en) | 2000-11-21 | 2001-11-20 | Sense amplifier for multilevel non-volatile integrated memory devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1672215A true CN1672215A (zh) | 2005-09-21 |
CN100456389C CN100456389C (zh) | 2009-01-28 |
Family
ID=25535640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028230825A Expired - Fee Related CN100456389C (zh) | 2001-11-20 | 2002-11-12 | 用于多级非易失性集成存储器装置的读出放大器 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6747892B2 (zh) |
EP (1) | EP1446807B1 (zh) |
JP (1) | JP4274943B2 (zh) |
KR (1) | KR100915883B1 (zh) |
CN (1) | CN100456389C (zh) |
AT (1) | ATE384330T1 (zh) |
AU (1) | AU2002364118A1 (zh) |
DE (1) | DE60224703T2 (zh) |
WO (1) | WO2003044803A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105469818A (zh) * | 2014-09-12 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | 读出放大器 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3709846B2 (ja) * | 2002-01-18 | 2005-10-26 | ソニー株式会社 | 並列型ad変換器 |
KR100942870B1 (ko) * | 2005-07-04 | 2010-02-17 | 마이크론 테크놀로지, 인크. | 저전력 다중 비트 감지 증폭기 |
US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
US7385848B2 (en) * | 2005-09-09 | 2008-06-10 | Sharp Kabushiki Kaisha | Semiconductor storage device and electronic equipment |
US7489546B2 (en) * | 2005-12-20 | 2009-02-10 | Micron Technology, Inc. | NAND architecture memory devices and operation |
JP4855773B2 (ja) * | 2005-12-26 | 2012-01-18 | 株式会社東芝 | 半導体記憶装置及びそのデータ読み出し方法 |
US7457178B2 (en) * | 2006-01-12 | 2008-11-25 | Sandisk Corporation | Trimming of analog voltages in flash memory devices |
US7254071B2 (en) * | 2006-01-12 | 2007-08-07 | Sandisk Corporation | Flash memory devices with trimmed analog voltages |
US7499369B2 (en) * | 2006-07-19 | 2009-03-03 | Sandisk Corporation | Method of high-performance flash memory data transfer |
US7366028B2 (en) | 2006-04-24 | 2008-04-29 | Sandisk Corporation | Method of high-performance flash memory data transfer |
US7345926B2 (en) * | 2006-04-24 | 2008-03-18 | Sandisk Corporation | High-performance flash memory data transfer |
US7499339B2 (en) * | 2006-07-19 | 2009-03-03 | Sandisk Corporation | High-performance flash memory data transfer |
US7525855B2 (en) * | 2006-04-24 | 2009-04-28 | Sandisk Corporation | Method of high-performance flash memory data transfer |
US7366029B2 (en) * | 2006-04-24 | 2008-04-29 | Sandisk Corporation | High-performance flash memory data transfer |
WO2007125590A1 (ja) | 2006-04-28 | 2007-11-08 | Spansion Llc | 半導体装置およびその制御方法 |
US20070300130A1 (en) * | 2006-05-17 | 2007-12-27 | Sandisk Corporation | Method of Error Correction Coding for Multiple-Sector Pages in Flash Memory Devices |
US7809994B2 (en) * | 2006-05-17 | 2010-10-05 | Sandisk Corporation | Error correction coding for multiple-sector pages in flash memory devices |
US7304893B1 (en) | 2006-06-30 | 2007-12-04 | Sandisk Corporation | Method of partial page fail bit detection in flash memory devices |
US7355892B2 (en) * | 2006-06-30 | 2008-04-08 | Sandisk Corporation | Partial page fail bit detection in flash memory devices |
US7522463B2 (en) | 2007-01-12 | 2009-04-21 | Atmel Corporation | Sense amplifier with stages to reduce capacitance mismatch in current mirror load |
US7599224B2 (en) * | 2007-07-03 | 2009-10-06 | Sandisk Corporation | Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7508715B2 (en) * | 2007-07-03 | 2009-03-24 | Sandisk Corporation | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7746713B2 (en) * | 2007-09-12 | 2010-06-29 | Massachusetts Institute Of Technology | High density 45 nm SRAM using small-signal non-strobed regenerative sensing |
KR101026658B1 (ko) * | 2008-03-17 | 2011-04-04 | 엘피다 메모리 가부시키가이샤 | 단일-종단 감지 증폭기를 갖는 반도체 디바이스 |
US7710782B2 (en) * | 2008-05-05 | 2010-05-04 | Macronix International Co., Ltd. | Sense amplifier and data sensing method thereof |
CN101609710B (zh) * | 2008-06-17 | 2011-07-27 | 旺宏电子股份有限公司 | 感测放大器电路及其数据感测方法 |
US8469971B2 (en) * | 2008-08-12 | 2013-06-25 | Boston Scientific Neuromodulation Corporation | Stylet for guiding leads of implantable electric stimulation systems and methods of making and using |
US8509013B1 (en) * | 2010-04-30 | 2013-08-13 | Micron Technology, Inc. | Partitioned bitline for memory |
US9047930B2 (en) * | 2013-07-26 | 2015-06-02 | International Business Machines Corporation | Single-ended low-swing power-savings mechanism with process compensation |
US9997250B2 (en) | 2016-03-17 | 2018-06-12 | SK Hynix Inc. | Non-volatile memory device with a plurality of cache latches and switches and method for operating non-volatile memory device |
KR102424285B1 (ko) * | 2018-02-01 | 2022-07-25 | 에스케이하이닉스 주식회사 | 멀티 레벨 센싱 회로 및 이를 포함하는 반도체 장치 |
US11372056B2 (en) * | 2020-05-26 | 2022-06-28 | Sandisk Technologies Llc | Circuit for detecting pin-to-pin leaks of an integrated circuit package |
US12094542B2 (en) | 2020-12-08 | 2024-09-17 | Stmicroelectronics International N.V. | Device and method to generate bias voltages in non-volatile memory |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5268319A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
US5095344A (en) * | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5220531A (en) | 1991-01-02 | 1993-06-15 | Information Storage Devices, Inc. | Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
FR2694119B1 (fr) * | 1992-07-24 | 1994-08-26 | Sgs Thomson Microelectronics | Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture. |
US5591384A (en) | 1994-03-31 | 1997-01-07 | Modern Technologies Corp. | Method for molding parts |
EP0735542A1 (en) | 1995-03-31 | 1996-10-02 | STMicroelectronics S.r.l. | Reading circuit for multilevel non-volatile memory cell devices |
US5684736A (en) | 1996-06-17 | 1997-11-04 | Nuram Technology, Inc. | Multilevel memory cell sense amplifier system |
US6490200B2 (en) | 2000-03-27 | 2002-12-03 | Sandisk Corporation | Non-volatile memory with improved sensing and method therefor |
IT1314042B1 (it) * | 1999-10-11 | 2002-12-03 | St Microelectronics Srl | Circuito amplificatore di lettura per memorie, ad elevata capacita'di discriminazione di livelli di corrente. |
KR100436127B1 (ko) * | 2000-06-28 | 2004-06-14 | 주식회사 하이닉스반도체 | 센스앰프를 포함하는 반도체 메모리 장치 및 센스앰프구동 방법 |
US6538922B1 (en) | 2000-09-27 | 2003-03-25 | Sandisk Corporation | Writable tracking cells |
-
2001
- 2001-11-20 US US09/989,996 patent/US6747892B2/en not_active Expired - Lifetime
-
2002
- 2002-11-12 DE DE60224703T patent/DE60224703T2/de not_active Expired - Lifetime
- 2002-11-12 WO PCT/US2002/036356 patent/WO2003044803A2/en active IP Right Grant
- 2002-11-12 EP EP02799188A patent/EP1446807B1/en not_active Expired - Lifetime
- 2002-11-12 JP JP2003546354A patent/JP4274943B2/ja not_active Expired - Fee Related
- 2002-11-12 AT AT02799188T patent/ATE384330T1/de not_active IP Right Cessation
- 2002-11-12 AU AU2002364118A patent/AU2002364118A1/en not_active Abandoned
- 2002-11-12 KR KR1020047007706A patent/KR100915883B1/ko not_active IP Right Cessation
- 2002-11-12 CN CNB028230825A patent/CN100456389C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105469818A (zh) * | 2014-09-12 | 2016-04-06 | 上海华虹宏力半导体制造有限公司 | 读出放大器 |
CN105469818B (zh) * | 2014-09-12 | 2018-01-26 | 上海华虹宏力半导体制造有限公司 | 读出放大器 |
Also Published As
Publication number | Publication date |
---|---|
KR100915883B1 (ko) | 2009-09-07 |
EP1446807A2 (en) | 2004-08-18 |
US6747892B2 (en) | 2004-06-08 |
EP1446807A4 (en) | 2005-11-30 |
KR20040070174A (ko) | 2004-08-06 |
EP1446807B1 (en) | 2008-01-16 |
WO2003044803A3 (en) | 2003-08-28 |
AU2002364118A1 (en) | 2003-06-10 |
JP4274943B2 (ja) | 2009-06-10 |
JP2005510006A (ja) | 2005-04-14 |
DE60224703D1 (de) | 2008-03-06 |
CN100456389C (zh) | 2009-01-28 |
DE60224703T2 (de) | 2009-01-08 |
US20030095431A1 (en) | 2003-05-22 |
WO2003044803A2 (en) | 2003-05-30 |
ATE384330T1 (de) | 2008-02-15 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120322 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120322 Address after: American Texas Patentee after: Sandisk Corp. Address before: california Patentee before: Sandisk Corp. |
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C56 | Change in the name or address of the patentee |
Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER NAME: SANDISK TECHNOLOGIES, INC. |
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CP01 | Change in the name or title of a patent holder |
Address after: American Texas Patentee after: Sandisk Corp. Address before: American Texas Patentee before: Sandisk Corp. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090128 Termination date: 20181112 |
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CF01 | Termination of patent right due to non-payment of annual fee |