DE60224703D1 - Leseverstärker für nichtflüchtige integrierte mehrebenen-speicherbausteine - Google Patents

Leseverstärker für nichtflüchtige integrierte mehrebenen-speicherbausteine

Info

Publication number
DE60224703D1
DE60224703D1 DE60224703T DE60224703T DE60224703D1 DE 60224703 D1 DE60224703 D1 DE 60224703D1 DE 60224703 T DE60224703 T DE 60224703T DE 60224703 T DE60224703 T DE 60224703T DE 60224703 D1 DE60224703 D1 DE 60224703D1
Authority
DE
Germany
Prior art keywords
cell
sense amplifier
charge
buffer
reader
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60224703T
Other languages
English (en)
Other versions
DE60224703T2 (de
Inventor
Shahzad Khalid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk Corp filed Critical SanDisk Corp
Application granted granted Critical
Publication of DE60224703D1 publication Critical patent/DE60224703D1/de
Publication of DE60224703T2 publication Critical patent/DE60224703T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Amplifiers (AREA)
  • Non-Volatile Memory (AREA)
  • Warehouses Or Storage Devices (AREA)
DE60224703T 2001-11-20 2002-11-12 Leseverstärker für nichtflüchtige integrierte mehrebenen-speicherbausteine Expired - Lifetime DE60224703T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US989996 2001-11-20
US09/989,996 US6747892B2 (en) 2000-11-21 2001-11-20 Sense amplifier for multilevel non-volatile integrated memory devices
PCT/US2002/036356 WO2003044803A2 (en) 2001-11-20 2002-11-12 Sense amplifier for multilevel non-volatile integrated memory devices

Publications (2)

Publication Number Publication Date
DE60224703D1 true DE60224703D1 (de) 2008-03-06
DE60224703T2 DE60224703T2 (de) 2009-01-08

Family

ID=25535640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60224703T Expired - Lifetime DE60224703T2 (de) 2001-11-20 2002-11-12 Leseverstärker für nichtflüchtige integrierte mehrebenen-speicherbausteine

Country Status (9)

Country Link
US (1) US6747892B2 (de)
EP (1) EP1446807B1 (de)
JP (1) JP4274943B2 (de)
KR (1) KR100915883B1 (de)
CN (1) CN100456389C (de)
AT (1) ATE384330T1 (de)
AU (1) AU2002364118A1 (de)
DE (1) DE60224703T2 (de)
WO (1) WO2003044803A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110111824A (zh) * 2018-02-01 2019-08-09 爱思开海力士有限公司 多电平感测电路及包括其的半导体存储器件

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3709846B2 (ja) * 2002-01-18 2005-10-26 ソニー株式会社 並列型ａｄ変換器
KR100942870B1 (ko) * 2005-07-04 2010-02-17 마이크론 테크놀로지, 인크. 저전력 다중 비트 감지 증폭기
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
US7385848B2 (en) * 2005-09-09 2008-06-10 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment
US7489546B2 (en) 2005-12-20 2009-02-10 Micron Technology, Inc. NAND architecture memory devices and operation
JP4855773B2 (ja) * 2005-12-26 2012-01-18 株式会社東芝 半導体記憶装置及びそのデータ読み出し方法
US7457178B2 (en) * 2006-01-12 2008-11-25 Sandisk Corporation Trimming of analog voltages in flash memory devices
US7254071B2 (en) * 2006-01-12 2007-08-07 Sandisk Corporation Flash memory devices with trimmed analog voltages
US7366028B2 (en) 2006-04-24 2008-04-29 Sandisk Corporation Method of high-performance flash memory data transfer
US7525855B2 (en) * 2006-04-24 2009-04-28 Sandisk Corporation Method of high-performance flash memory data transfer
US7345926B2 (en) * 2006-04-24 2008-03-18 Sandisk Corporation High-performance flash memory data transfer
US7499339B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation High-performance flash memory data transfer
US7499369B2 (en) * 2006-07-19 2009-03-03 Sandisk Corporation Method of high-performance flash memory data transfer
US7366029B2 (en) * 2006-04-24 2008-04-29 Sandisk Corporation High-performance flash memory data transfer
JPWO2007125590A1 (ja) 2006-04-28 2009-09-10 スパンション エルエルシー 半導体装置およびその制御方法
US7809994B2 (en) * 2006-05-17 2010-10-05 Sandisk Corporation Error correction coding for multiple-sector pages in flash memory devices
US20070300130A1 (en) * 2006-05-17 2007-12-27 Sandisk Corporation Method of Error Correction Coding for Multiple-Sector Pages in Flash Memory Devices
US7304893B1 (en) 2006-06-30 2007-12-04 Sandisk Corporation Method of partial page fail bit detection in flash memory devices
US7355892B2 (en) * 2006-06-30 2008-04-08 Sandisk Corporation Partial page fail bit detection in flash memory devices
US7522463B2 (en) 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7746713B2 (en) * 2007-09-12 2010-06-29 Massachusetts Institute Of Technology High density 45 nm SRAM using small-signal non-strobed regenerative sensing
KR101026658B1 (ko) * 2008-03-17 2011-04-04 엘피다 메모리 가부시키가이샤 단일-종단 감지 증폭기를 갖는 반도체 디바이스
US7710782B2 (en) * 2008-05-05 2010-05-04 Macronix International Co., Ltd. Sense amplifier and data sensing method thereof
CN101609710B (zh) * 2008-06-17 2011-07-27 旺宏电子股份有限公司 感测放大器电路及其数据感测方法
US8469971B2 (en) * 2008-08-12 2013-06-25 Boston Scientific Neuromodulation Corporation Stylet for guiding leads of implantable electric stimulation systems and methods of making and using
US8509013B1 (en) * 2010-04-30 2013-08-13 Micron Technology, Inc. Partitioned bitline for memory
US9047930B2 (en) * 2013-07-26 2015-06-02 International Business Machines Corporation Single-ended low-swing power-savings mechanism with process compensation
CN105469818B (zh) * 2014-09-12 2018-01-26 上海华虹宏力半导体制造有限公司 读出放大器
US9997250B2 (en) 2016-03-17 2018-06-12 SK Hynix Inc. Non-volatile memory device with a plurality of cache latches and switches and method for operating non-volatile memory device
US11372056B2 (en) * 2020-05-26 2022-06-28 Sandisk Technologies Llc Circuit for detecting pin-to-pin leaks of an integrated circuit package

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5220531A (en) 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
US5591384A (en) 1994-03-31 1997-01-07 Modern Technologies Corp. Method for molding parts
EP0735542A1 (de) 1995-03-31 1996-10-02 STMicroelectronics S.r.l. Leseschaltung für nichtflüchtige Mehrpegel-Speicherzellenanordnungen
US5684736A (en) 1996-06-17 1997-11-04 Nuram Technology, Inc. Multilevel memory cell sense amplifier system
US6490200B2 (en) 2000-03-27 2002-12-03 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
IT1314042B1 (it) * 1999-10-11 2002-12-03 St Microelectronics Srl Circuito amplificatore di lettura per memorie, ad elevata capacita'di discriminazione di livelli di corrente.
KR100436127B1 (ko) * 2000-06-28 2004-06-14 주식회사 하이닉스반도체 센스앰프를 포함하는 반도체 메모리 장치 및 센스앰프구동 방법
US6538922B1 (en) 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110111824A (zh) * 2018-02-01 2019-08-09 爱思开海力士有限公司 多电平感测电路及包括其的半导体存储器件

Also Published As

Publication number Publication date
ATE384330T1 (de) 2008-02-15
JP4274943B2 (ja) 2009-06-10
KR100915883B1 (ko) 2009-09-07
JP2005510006A (ja) 2005-04-14
CN100456389C (zh) 2009-01-28
DE60224703T2 (de) 2009-01-08
WO2003044803A2 (en) 2003-05-30
US6747892B2 (en) 2004-06-08
EP1446807A4 (de) 2005-11-30
AU2002364118A1 (en) 2003-06-10
KR20040070174A (ko) 2004-08-06
US20030095431A1 (en) 2003-05-22
EP1446807A2 (de) 2004-08-18
WO2003044803A3 (en) 2003-08-28
CN1672215A (zh) 2005-09-21
EP1446807B1 (de) 2008-01-16

Similar Documents

Publication Publication Date Title
DE60224703D1 (de) Leseverstärker für nichtflüchtige integrierte mehrebenen-speicherbausteine
EP0986067A3 (de) Nichtflüchtiger Halbleiterspeicher
US20190108121A1 (en) Memory systems for data collection and compression in a storage device
EP1182669A3 (de) Nichtflüchtige Halbleiterspeicheranordnung
EP1052647A3 (de) Halbleiteranordnung
TW359835B (en) Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path
WO2005001839A3 (en) High performance gain cell architecture
EP0911831A3 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE602004014349D1 (de) Leseverstärkersysteme und damit ausgestattete matrixadressierbare speichereinrichtung
TW200710851A (en) Non-volatile memory device, and control method of non-volatile memory device
EP1387361A3 (de) Halbleiterspeicheranordnung
DE602004010134D1 (de) Kompensation einer langen lesezeit einer speichervorrichtung in datenvergleichs- und schreiboperationen
SG131754A1 (en) Semiconductor storage device and information apparatus
TW200614239A (en) Semiconductor memory device for low power system
ATE243359T1 (de) Wortleitungssignale einer flashspeicher bleiben überall auf dem chip verlustfrei
DE60126800D1 (de) Burstread mit ausgangbasierter redundanz
TW358940B (en) Semiconductor storage device
EP0869509A3 (de) Nichtflüchtiger Halbleiterspeicher
DE602004026204D1 (de) Verfahren und vorrichtung zur lese-bitleitungs-klemmung für verstärkungszellen-dram-bausteine
TW200614236A (en) Semiconductor memory device for low power condition
KR100368133B1 (ko) 메모리 셀 정보 저장 방법
EP0952586A3 (de) Halbleiterspeicheranordnung
ITMI991618A0 (it) Dispositivo di memoria non volatile con basso consumo di potenza e rel ativi metodi di scrittura lettura e cancellazione
KR100316576B1 (ko) 센스 앰프에 부가된 부하를 감소시켜 감지 시간을 단축시킬 수있는 반도체 장치
TW434544B (en) Semiconductor integrated circuit

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 1446807

Country of ref document: EP

Representative=s name: PATENTANWAELTE MAXTON LANGMAACK & PARTNER, DE