CN1672098B - 形成和修正具有间隙缺陷的光刻版的方法 - Google Patents

形成和修正具有间隙缺陷的光刻版的方法 Download PDF

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Publication number
CN1672098B
CN1672098B CN038175940A CN03817594A CN1672098B CN 1672098 B CN1672098 B CN 1672098B CN 038175940 A CN038175940 A CN 038175940A CN 03817594 A CN03817594 A CN 03817594A CN 1672098 B CN1672098 B CN 1672098B
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China
Prior art keywords
layer
masterplate
forming
substrate
oxide
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Expired - Fee Related
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CN038175940A
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English (en)
Chinese (zh)
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CN1672098A (zh
Inventor
戴维·P.·曼西尼
威廉·J.·道克什尔
凯文·J.·诺德奎斯特
道格拉斯·J.·莱斯尼克
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1672098A publication Critical patent/CN1672098A/zh
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Publication of CN1672098B publication Critical patent/CN1672098B/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
CN038175940A 2002-07-31 2003-07-11 形成和修正具有间隙缺陷的光刻版的方法 Expired - Fee Related CN1672098B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/209,167 US7063919B2 (en) 2002-07-31 2002-07-31 Lithographic template having a repaired gap defect method of repair and use
US10/209,167 2002-07-31
PCT/US2003/021759 WO2004011258A2 (en) 2002-07-31 2003-07-11 Method of forming and repairing a lithographic template having a gap defect

Publications (2)

Publication Number Publication Date
CN1672098A CN1672098A (zh) 2005-09-21
CN1672098B true CN1672098B (zh) 2011-09-14

Family

ID=31186984

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038175940A Expired - Fee Related CN1672098B (zh) 2002-07-31 2003-07-11 形成和修正具有间隙缺陷的光刻版的方法

Country Status (7)

Country Link
US (1) US7063919B2 (enExample)
EP (1) EP1525512A2 (enExample)
JP (1) JP4429903B2 (enExample)
KR (1) KR100943402B1 (enExample)
CN (1) CN1672098B (enExample)
AU (1) AU2003247863A1 (enExample)
WO (1) WO2004011258A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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WO2003075403A1 (en) 2002-03-05 2003-09-12 Sumida Corporation Antenna coil
US6852454B2 (en) * 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
US7771917B2 (en) * 2005-06-17 2010-08-10 Micron Technology, Inc. Methods of making templates for use in imprint lithography
US7425392B2 (en) * 2005-08-26 2008-09-16 Motorola, Inc. Lithographic template and method of formation and use
US7943080B2 (en) * 2005-12-23 2011-05-17 Asml Netherlands B.V. Alignment for imprint lithography
JP4281773B2 (ja) 2006-09-25 2009-06-17 ヤマハ株式会社 微細成形モールド及び微細成形モールドの再生方法
KR101563874B1 (ko) * 2007-02-07 2015-10-29 주식회사 에스앤에스텍 블랭크 스탬프 및 나노 임프린트 리소그래피용 스탬프
CN101246307B (zh) * 2007-02-15 2010-12-01 联华电子股份有限公司 使用半导体工艺制造压印模板的方法及所制得的压印模板
JP5532939B2 (ja) * 2010-01-14 2014-06-25 大日本印刷株式会社 光インプリント用のモールドおよびこれを用いた光インプリント方法
JPWO2011155582A1 (ja) * 2010-06-11 2013-08-15 株式会社日立ハイテクノロジーズ 微細構造転写用スタンパ及び微細構造転写装置
JP2012044090A (ja) * 2010-08-23 2012-03-01 Toshiba Corp 検査方法、テンプレート製造方法、半導体集積回路製造方法および検査システム
JP5823938B2 (ja) * 2012-09-07 2015-11-25 株式会社東芝 モールド洗浄装置及びモールド洗浄方法
JP5614436B2 (ja) * 2012-09-28 2014-10-29 大日本印刷株式会社 反射防止物品製造用賦型版の修正方法及び反射防止物品製造用賦型版の製造方法
JP5806692B2 (ja) * 2013-02-21 2015-11-10 株式会社東芝 リソグラフィ原版検査方法
JP5951566B2 (ja) * 2013-08-23 2016-07-13 株式会社東芝 モールド洗浄装置及びモールド洗浄方法
CN105093817A (zh) * 2014-05-23 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种光掩模图案的修复方法
KR102710915B1 (ko) * 2016-10-25 2024-09-26 엘지디스플레이 주식회사 임프린트 몰드 및 이의 제조방법
CN111199876A (zh) * 2019-12-30 2020-05-26 上海集成电路研发中心有限公司 光刻缺陷修复方法以及半导体器件的制作方法
CN113296182A (zh) * 2021-05-24 2021-08-24 宁波市知行光学科技有限公司 生成补偿器的方法
WO2023121640A1 (en) * 2021-12-20 2023-06-29 Leia Inc. Imprint lithography defect mitigation method and masked imprint lithography mold
US12417946B2 (en) * 2022-04-20 2025-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Film scheme to reduce plasma-induced damage
CN115172141A (zh) * 2022-06-09 2022-10-11 深圳市汇芯通信技术有限公司 氮化铝模板的制备方法和氮化铝模板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340654A (en) * 1980-06-19 1982-07-20 Campi James G Defect-free photomask
CN1115417A (zh) * 1994-06-23 1996-01-24 现代电子产业株式会社 相移掩模
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
CN1164049A (zh) * 1995-03-22 1997-11-05 现代电子产业株式会社 制造曝光掩模的方法
US20010028045A1 (en) * 1998-12-28 2001-10-11 Baorui Yang Method for repairing MoSi attenuated phase shifting masks
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003628A1 (en) 1980-06-19 1981-12-24 Master Images Inc Process for forming a defect-free photomask or repairing defects in an existing photomask and product thereof
US5246799A (en) * 1991-09-20 1993-09-21 At&T Bell Laboratories Method of removing excess material, for repairing phase-shifting lithographic masks
US5246801A (en) * 1991-09-20 1993-09-21 At&T Bell Laboratories Method of repairing indentations in phase-shifting lithographic masks
JPH0580530A (ja) * 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340654A (en) * 1980-06-19 1982-07-20 Campi James G Defect-free photomask
CN1115417A (zh) * 1994-06-23 1996-01-24 现代电子产业株式会社 相移掩模
CN1164049A (zh) * 1995-03-22 1997-11-05 现代电子产业株式会社 制造曝光掩模的方法
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US20010028045A1 (en) * 1998-12-28 2001-10-11 Baorui Yang Method for repairing MoSi attenuated phase shifting masks
US6387787B1 (en) * 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M.Colburn, T.Bailey, B.J.Choi.Development and advantages of step-and-flash lithography.Solid state technology46.2001,4667-76. *

Also Published As

Publication number Publication date
WO2004011258A3 (en) 2004-07-29
WO2004011258A2 (en) 2004-02-05
US20040023126A1 (en) 2004-02-05
EP1525512A2 (en) 2005-04-27
JP4429903B2 (ja) 2010-03-10
KR100943402B1 (ko) 2010-02-22
KR20050032581A (ko) 2005-04-07
AU2003247863A8 (en) 2004-02-16
CN1672098A (zh) 2005-09-21
JP2005534960A (ja) 2005-11-17
AU2003247863A1 (en) 2004-02-16
US7063919B2 (en) 2006-06-20

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Granted publication date: 20110914

Termination date: 20160711