JP4429903B2 - 修復されたギャップ欠陥を有するリソグラフィックテンプレートの形成方法及び同方法を用いたデバイスの製造方法 - Google Patents

修復されたギャップ欠陥を有するリソグラフィックテンプレートの形成方法及び同方法を用いたデバイスの製造方法 Download PDF

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Publication number
JP4429903B2
JP4429903B2 JP2004524590A JP2004524590A JP4429903B2 JP 4429903 B2 JP4429903 B2 JP 4429903B2 JP 2004524590 A JP2004524590 A JP 2004524590A JP 2004524590 A JP2004524590 A JP 2004524590A JP 4429903 B2 JP4429903 B2 JP 4429903B2
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Japan
Prior art keywords
template
layer
lithographic
substrate
forming
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Expired - Fee Related
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JP2004524590A
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English (en)
Japanese (ja)
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JP2005534960A (ja
JP2005534960A5 (enExample
Inventor
ピー． マンチーニ、デイビッド
ジェイ． ダウクシャー、ウィリアム
ジェイ． ノードキスト、ケビン
ジェイ． レズニック、ダグラス
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NXP USA Inc
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NXP USA Inc
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Publication of JP2005534960A5 publication Critical patent/JP2005534960A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
JP2004524590A 2002-07-31 2003-07-11 修復されたギャップ欠陥を有するリソグラフィックテンプレートの形成方法及び同方法を用いたデバイスの製造方法 Expired - Fee Related JP4429903B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/209,167 US7063919B2 (en) 2002-07-31 2002-07-31 Lithographic template having a repaired gap defect method of repair and use
PCT/US2003/021759 WO2004011258A2 (en) 2002-07-31 2003-07-11 Method of forming and repairing a lithographic template having a gap defect

Publications (3)

Publication Number Publication Date
JP2005534960A JP2005534960A (ja) 2005-11-17
JP2005534960A5 JP2005534960A5 (enExample) 2006-08-31
JP4429903B2 true JP4429903B2 (ja) 2010-03-10

Family

ID=31186984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004524590A Expired - Fee Related JP4429903B2 (ja) 2002-07-31 2003-07-11 修復されたギャップ欠陥を有するリソグラフィックテンプレートの形成方法及び同方法を用いたデバイスの製造方法

Country Status (7)

Country Link
US (1) US7063919B2 (enExample)
EP (1) EP1525512A2 (enExample)
JP (1) JP4429903B2 (enExample)
KR (1) KR100943402B1 (enExample)
CN (1) CN1672098B (enExample)
AU (1) AU2003247863A1 (enExample)
WO (1) WO2004011258A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755558B2 (en) 2002-03-05 2010-07-13 Denso Corporation Antenna coil

Families Citing this family (21)

* Cited by examiner, † Cited by third party
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US6852454B2 (en) * 2002-06-18 2005-02-08 Freescale Semiconductor, Inc. Multi-tiered lithographic template and method of formation and use
US7771917B2 (en) * 2005-06-17 2010-08-10 Micron Technology, Inc. Methods of making templates for use in imprint lithography
US7425392B2 (en) * 2005-08-26 2008-09-16 Motorola, Inc. Lithographic template and method of formation and use
US7943080B2 (en) * 2005-12-23 2011-05-17 Asml Netherlands B.V. Alignment for imprint lithography
JP4281773B2 (ja) 2006-09-25 2009-06-17 ヤマハ株式会社 微細成形モールド及び微細成形モールドの再生方法
KR101563874B1 (ko) * 2007-02-07 2015-10-29 주식회사 에스앤에스텍 블랭크 스탬프 및 나노 임프린트 리소그래피용 스탬프
CN101246307B (zh) * 2007-02-15 2010-12-01 联华电子股份有限公司 使用半导体工艺制造压印模板的方法及所制得的压印模板
JP5532939B2 (ja) * 2010-01-14 2014-06-25 大日本印刷株式会社 光インプリント用のモールドおよびこれを用いた光インプリント方法
JPWO2011155582A1 (ja) * 2010-06-11 2013-08-15 株式会社日立ハイテクノロジーズ 微細構造転写用スタンパ及び微細構造転写装置
JP2012044090A (ja) * 2010-08-23 2012-03-01 Toshiba Corp 検査方法、テンプレート製造方法、半導体集積回路製造方法および検査システム
JP5823938B2 (ja) * 2012-09-07 2015-11-25 株式会社東芝 モールド洗浄装置及びモールド洗浄方法
JP5614436B2 (ja) * 2012-09-28 2014-10-29 大日本印刷株式会社 反射防止物品製造用賦型版の修正方法及び反射防止物品製造用賦型版の製造方法
JP5806692B2 (ja) * 2013-02-21 2015-11-10 株式会社東芝 リソグラフィ原版検査方法
JP5951566B2 (ja) * 2013-08-23 2016-07-13 株式会社東芝 モールド洗浄装置及びモールド洗浄方法
CN105093817A (zh) * 2014-05-23 2015-11-25 中芯国际集成电路制造(上海)有限公司 一种光掩模图案的修复方法
KR102710915B1 (ko) * 2016-10-25 2024-09-26 엘지디스플레이 주식회사 임프린트 몰드 및 이의 제조방법
CN111199876A (zh) * 2019-12-30 2020-05-26 上海集成电路研发中心有限公司 光刻缺陷修复方法以及半导体器件的制作方法
CN113296182A (zh) * 2021-05-24 2021-08-24 宁波市知行光学科技有限公司 生成补偿器的方法
WO2023121640A1 (en) * 2021-12-20 2023-06-29 Leia Inc. Imprint lithography defect mitigation method and masked imprint lithography mold
US12417946B2 (en) * 2022-04-20 2025-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Film scheme to reduce plasma-induced damage
CN115172141A (zh) * 2022-06-09 2022-10-11 深圳市汇芯通信技术有限公司 氮化铝模板的制备方法和氮化铝模板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1981003628A1 (en) 1980-06-19 1981-12-24 Master Images Inc Process for forming a defect-free photomask or repairing defects in an existing photomask and product thereof
US4340654A (en) * 1980-06-19 1982-07-20 Campi James G Defect-free photomask
US5246799A (en) * 1991-09-20 1993-09-21 At&T Bell Laboratories Method of removing excess material, for repairing phase-shifting lithographic masks
US5246801A (en) * 1991-09-20 1993-09-21 At&T Bell Laboratories Method of repairing indentations in phase-shifting lithographic masks
JPH0580530A (ja) * 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
KR0143707B1 (ko) * 1994-06-23 1998-08-17 김주용 마스크 가장자리에서 투과되는 광의 강도를 보상하기 위한 위상반전 마스크
KR0172558B1 (ko) * 1995-03-22 1999-03-20 김주용 노광 마스크의 제조방법
US5609925A (en) 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US6277526B1 (en) 1998-12-28 2001-08-21 Micron Technology, Inc. Method for repairing MoSi attenuated phase shift masks
US6387787B1 (en) 2001-03-02 2002-05-14 Motorola, Inc. Lithographic template and method of formation and use

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755558B2 (en) 2002-03-05 2010-07-13 Denso Corporation Antenna coil

Also Published As

Publication number Publication date
WO2004011258A3 (en) 2004-07-29
WO2004011258A2 (en) 2004-02-05
US20040023126A1 (en) 2004-02-05
CN1672098B (zh) 2011-09-14
EP1525512A2 (en) 2005-04-27
KR100943402B1 (ko) 2010-02-22
KR20050032581A (ko) 2005-04-07
AU2003247863A8 (en) 2004-02-16
CN1672098A (zh) 2005-09-21
JP2005534960A (ja) 2005-11-17
AU2003247863A1 (en) 2004-02-16
US7063919B2 (en) 2006-06-20

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