CN1664162A - 通过离子注入和热处理制备有色金刚石的方法 - Google Patents
通过离子注入和热处理制备有色金刚石的方法 Download PDFInfo
- Publication number
- CN1664162A CN1664162A CN2005100531552A CN200510053155A CN1664162A CN 1664162 A CN1664162 A CN 1664162A CN 2005100531552 A CN2005100531552 A CN 2005100531552A CN 200510053155 A CN200510053155 A CN 200510053155A CN 1664162 A CN1664162 A CN 1664162A
- Authority
- CN
- China
- Prior art keywords
- diamond
- ion
- ion implantation
- manufacturing
- color
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/28—After-treatment, e.g. purification, irradiation, separation or recovery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Adornments (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040014557 | 2004-03-04 | ||
KR10-2004-0014557 | 2004-03-04 | ||
KR1020040014557A KR100644929B1 (ko) | 2004-03-04 | 2004-03-04 | 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1664162A true CN1664162A (zh) | 2005-09-07 |
CN100424225C CN100424225C (zh) | 2008-10-08 |
Family
ID=34910015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100531552A Expired - Fee Related CN100424225C (zh) | 2004-03-04 | 2005-03-04 | 通过离子注入和热处理制备有色金刚石的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7604846B2 (zh) |
JP (1) | JP4413157B2 (zh) |
KR (1) | KR100644929B1 (zh) |
CN (1) | CN100424225C (zh) |
IT (1) | ITTO20050139A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102021525A (zh) * | 2010-12-02 | 2011-04-20 | 武汉科技大学 | 一种基于离子注入的彩色不锈钢及其制备方法 |
CN102208321A (zh) * | 2011-05-11 | 2011-10-05 | 江苏大学 | 一种激光诱导等离子体注入基材的方法及装置 |
CN107840331A (zh) * | 2017-11-02 | 2018-03-27 | 长沙新材料产业研究院有限公司 | 一种金刚石改性的方法及改性金刚石 |
CN110625123A (zh) * | 2019-08-26 | 2019-12-31 | 中南钻石有限公司 | 一种高性能聚晶金刚石复合片及其制备方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5177472B2 (ja) * | 2006-10-05 | 2013-04-03 | 地方独立行政法人 東京都立産業技術研究センター | カット面を着色したダイヤモンド粒子の製造方法、およびカット面に文様を描画したダイヤモンド粒子の製造方法 |
US8778463B2 (en) * | 2008-06-12 | 2014-07-15 | Jae-Won Park | Method for manufacturing the color controlled sapphire |
US8961920B1 (en) | 2011-04-26 | 2015-02-24 | Us Synthetic Corporation | Methods of altering the color of a diamond by irradiation and high-pressure/high-temperature processing |
WO2021013308A1 (de) | 2019-07-25 | 2021-01-28 | Jan Meijer | Nv-zentrum basierender mikrowellenfreier quantensensor und dessen anwendungen und ausprägungen |
US20210095373A1 (en) * | 2019-08-13 | 2021-04-01 | Pt Creations | Synthetic diamond jewelry and fabrication method thereof |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1287A (en) * | 1839-08-14 | galpin | ||
JPS5576060A (en) * | 1978-12-04 | 1980-06-07 | Agency Of Ind Science & Technol | Metal surface coloring method |
JPS56127775A (en) * | 1980-03-06 | 1981-10-06 | Agency Of Ind Science & Technol | Protection of metallic copper from corrosion |
JPS62214173A (ja) * | 1986-03-17 | 1987-09-19 | Toyota Central Res & Dev Lab Inc | 透光性基板の着色方法 |
US5075764A (en) * | 1989-06-22 | 1991-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Diamond electric device and manufacturing method for the same |
JPH03115582A (ja) * | 1989-09-29 | 1991-05-16 | Tanaka Kikinzoku Kogyo Kk | ダイヤモンド上への貴金属コーティング方法 |
JP2836790B2 (ja) * | 1991-01-08 | 1998-12-14 | 株式会社神戸製鋼所 | ダイヤモンド薄膜へのオーミック電極形成方法 |
ZA933939B (en) * | 1992-06-05 | 1993-12-30 | De Beers Ind Diamond | Diamond doping |
USH1287H (en) * | 1992-06-16 | 1994-02-01 | The United States Of America As Represented By The Secretary Of The Navy | Ion implanted diamond metal-insulator-semiconductor field effect transistor |
JP3339137B2 (ja) * | 1993-10-27 | 2002-10-28 | 住友電気工業株式会社 | 合成ダイヤモンド単結晶およびその製造方法 |
US5702586A (en) * | 1994-06-28 | 1997-12-30 | The United States Of America As Represented By The Secretary Of The Navy | Polishing diamond surface |
JP3584450B2 (ja) * | 1995-03-17 | 2004-11-04 | 住友電気工業株式会社 | レーザー発振素子及びレーザー発振装置 |
JPH09106958A (ja) * | 1995-06-23 | 1997-04-22 | De Beers Ind Diamond Div Ltd | 結晶基体のドーピング |
JP2001035804A (ja) * | 1999-07-21 | 2001-02-09 | Agency Of Ind Science & Technol | ダイヤモンド半導体およびその作製方法 |
JP3138705B1 (ja) * | 1999-08-31 | 2001-02-26 | 工業技術院長 | ダイヤモンドpn接合ダイオードおよびその作製方法 |
US7241434B2 (en) * | 2000-08-11 | 2007-07-10 | Bellataire International, Llc | High pressure and high temperature production of diamonds |
CN1340331A (zh) * | 2000-08-30 | 2002-03-20 | 顾汉卿 | 钛表面修饰人工晶体的方法及其产品 |
US7402835B2 (en) * | 2002-07-18 | 2008-07-22 | Chevron U.S.A. Inc. | Heteroatom-containing diamondoid transistors |
KR20040012090A (ko) * | 2002-07-31 | 2004-02-11 | 송오성 | 다이아몬드의 발색방법 |
KR20040023447A (ko) * | 2002-09-11 | 2004-03-18 | 송오성 | 이온주입과 열처리 공정을 이용한 보석발색방법 |
US8168413B2 (en) * | 2006-11-22 | 2012-05-01 | Academia Sinica | Luminescent diamond particles |
-
2004
- 2004-03-04 KR KR1020040014557A patent/KR100644929B1/ko not_active IP Right Cessation
-
2005
- 2005-02-28 US US11/068,942 patent/US7604846B2/en not_active Expired - Fee Related
- 2005-03-03 JP JP2005059566A patent/JP4413157B2/ja not_active Expired - Fee Related
- 2005-03-04 IT IT000139A patent/ITTO20050139A1/it unknown
- 2005-03-04 CN CNB2005100531552A patent/CN100424225C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102021525A (zh) * | 2010-12-02 | 2011-04-20 | 武汉科技大学 | 一种基于离子注入的彩色不锈钢及其制备方法 |
CN102021525B (zh) * | 2010-12-02 | 2013-01-16 | 武汉科技大学 | 一种基于离子注入的彩色不锈钢及其制备方法 |
CN102208321A (zh) * | 2011-05-11 | 2011-10-05 | 江苏大学 | 一种激光诱导等离子体注入基材的方法及装置 |
CN102208321B (zh) * | 2011-05-11 | 2013-06-19 | 江苏大学 | 一种激光诱导等离子体注入基材的方法及装置 |
CN107840331A (zh) * | 2017-11-02 | 2018-03-27 | 长沙新材料产业研究院有限公司 | 一种金刚石改性的方法及改性金刚石 |
CN110625123A (zh) * | 2019-08-26 | 2019-12-31 | 中南钻石有限公司 | 一种高性能聚晶金刚石复合片及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4413157B2 (ja) | 2010-02-10 |
ITTO20050139A1 (it) | 2005-09-05 |
KR20050089239A (ko) | 2005-09-08 |
JP2005247686A (ja) | 2005-09-15 |
CN100424225C (zh) | 2008-10-08 |
KR100644929B1 (ko) | 2006-11-13 |
US20050196547A1 (en) | 2005-09-08 |
US7604846B2 (en) | 2009-10-20 |
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ASS | Succession or assignment of patent right |
Owner name: ENNAIJIN CO., LTD. Free format text: FORMER OWNER: KOREA ATOMIC ENERGY RESEARCH INSTITUTE Effective date: 20141124 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20141124 Address after: Gyeonggi Do, South Korea Patentee after: Grace Limited by Share Ltd Address before: South Korea Patentee before: Korea Atomic Energy Research Institute |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081008 Termination date: 20200304 |
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CF01 | Termination of patent right due to non-payment of annual fee |