CN1659308A - Gas distribution showerhead - Google Patents
Gas distribution showerhead Download PDFInfo
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- CN1659308A CN1659308A CN028274970A CN02827497A CN1659308A CN 1659308 A CN1659308 A CN 1659308A CN 028274970 A CN028274970 A CN 028274970A CN 02827497 A CN02827497 A CN 02827497A CN 1659308 A CN1659308 A CN 1659308A
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- Prior art keywords
- panel
- gas
- wafer
- gas distribution
- elongate slit
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- 238000009826 distribution Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 97
- 238000000151 deposition Methods 0.000 claims description 38
- 230000008021 deposition Effects 0.000 claims description 31
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 230000005540 biological transmission Effects 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000005360 phosphosilicate glass Substances 0.000 claims description 3
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000005368 silicate glass Substances 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 238000004891 communication Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 description 12
- 239000002131 composite material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241001281935 Leptobotia elongata Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A gas distribution showerhead for use in a semiconductor fabrication process features a face plate (316) having gas outlet ports (318B) in the form of elongated slots or channels. The use of elongated gas outlet ports in accordance with embodiments of the present invention substantially reduces the incidence of undesirable spotting and streaking of deposited material where the showerhead is closely spaced from the wafer. A showerhead featuring a face plate having a tapered profile to reduce edge thickness of deposited material at close face plate-to-wafer spacings is also disclosed.
Description
Technical field
Method and apparatus according to embodiments of the invention relate generally to be used for producing the semiconductor devices relates to the gas distribution showerhead that adopts in the high temperature deposition technology particularly.
Background technology
High temperature chemical vapor deposition (CVD) technology is widely used in semi-conductor industry.Figure 1A shows the simplified cross-sectional view that is used to carry out traditional high temperature chemical vapor deposition device.For illustrative purposes, another figure of Figure 1A-the application does not show in proportion.
Gas distribution showerhead 106 is positioned at the top of wafer 102, and opens with gap (gap) Y branch with wafer 102.To concrete application, the big I of gap Y is controlled with respect to the height of shower nozzle 106 by adjusting wafer support structure 104.For example, in traditional deposition of not mixing up silex glass (USG) material, gap Y is reducible greater than 300 mils.
Gas distribution showerhead 106 comprises process gas inlet 108, and it has fluid to transmit with 110 of blocker plate (blocker plate) with aperture (apertures) 112.Gas distribution face plate 114 is positioned at the downstream of blocker plate 110.Panel 114 is from blocker plate 110 receiving process air-flows, and (hole) 116 is transported to wafer 102 through the hole with gas.As the result of flow of process gases, deposited material layer 118 is formed on the wafer 102.
Figure 1B shows conventional gas distribution face plate 114 perspective bottom view among Figure 1A.The hole 116 of panel 114 is distributed on the panel surface.Figure 1B only shows the example that hole 116 distributes on panel, can there be many other layouts in the hole on the panel.
With reference to Figure 1A, the effect of blocker plate 110 is to distribute the process gas flow 120 that enters in the inlet side 114a of panel 114 roughly again.Panel 114 reallocation air-flows are consistent to produce, and the air-flow of meticulous distribution is exposed under this air-flow wafer 102.The result who is exposed to the flow of process air of fine distribution forms high-quality deposited material layer 118 on wafer 102.
The conventional high-temperature deposition apparatus that is shown in Figure 1A-1B produces structure on semiconductor wafer surface be effective.One type the structure that forms by high temperature CVD be shallow trench isolation from (shallow trench isolation, STI).The cross-sectional view that Fig. 2 shows wafer 200 is amplified, this wafer 200 has semiconductor structure 202, as active transistor.Close on active semiconductor device 202 and another device by sti structure 204 electrical isolations, this sti structure 204 comprises and is marked with dielectric materials, as the groove of unadulterated silex glass (USG).
Sti structure forms by mask and etched wafer exposed region, thereby produces groove.Mask is removed then, and uses high-temperature technology, and USG is on wafer for deposition, is included in the groove.The USG that is deposited on the groove outside can remove by etching or chemically machinery polished (CMP) subsequently, to manifest final sti structure.
Be shown in conventional apparatus among Figure 1A-1B and be successfully applied to deposition material when being applied in high temperature, as USG for STI and other.Yet expectation improves the high temperature deposition Design of device.For example, by making shower nozzle obtain faster apart from wafer is nearer that sedimentation rate is known.Sedimentation rate will improve the output of deposition apparatus faster, therefore make the manager can regain the cost of purchase and maintenance facilities quickly.
Yet, wafer with respect to shower nozzle every closelyer cause sedimentary material to demonstrate uneven pattern, seem to be exactly on wafer, to form spot and striped.But the pattern reacting hole of the sedimentary material of shower nozzle distance is put in faceplate with near wafer.
Fig. 3 A-3B is the photo of explanation according to the sedimentary result of embodiment of the invention material.Fig. 3 A is the photo that shows the wafer with usg film, and this film is sedimentary with traditional shower nozzle, and this shower nozzle panel is 75 mils to wafer pitch.Wafer among Fig. 3 A shows tangible spot and striped.
Fig. 3 B is the photo that shows the wafer with usg film, and this usg film is sedimentary with traditional shower nozzle, and this shower nozzle panel is 50 mils to wafer pitch.Wafer among Fig. 3 B is more obvious than spot and striped that the wafer among Fig. 3 A demonstrates.
Therefore, expectation obtains to allow to apply the method and structure of handling gas at next-door neighbour's substrate surface place.
Summary of the invention
The gas distribution showerhead of semiconductor fabrication applications (gas distribution showerhead) comprises the have pneumatic outlet panel (face plate) of (gas outlet port), the form of this pneumatic outlet is elongate slit and passage, rather than hole independently.According to embodiments of the invention, use elongated pneumatic outlet significantly to reduce the spot of not expecting of deposition material and the appearance of striped, wherein shower nozzle and wafer are closely spaced apart.The shower nozzle with tapered profiles for the edge thickness that reduces deposition material is also disclosed.
The embodiment that is used to form the device of material on semiconductor wafer comprises the treatment chamber that formed by the chamber wall, handle gas source (gas supply) and be positioned in the treatment chamber and be configured to receive the die support of semiconductor wafer.Gas distribution showerhead is positioned at the die support top, and separate with gas distribution showerhead, gas distribution showerhead comprises the panel with inlet part, this inlet part comprises the hole, the elongate slit delivery air of itself and panel exit portion, the length of elongate slit is the twice of plate thickness at least.
Embodiment according to the gas distribution face plate of embodiments of the invention comprises having certain thickness panel body.The inlet part of structure panel is to receive flow of process air, and this inlet part comprises the aperture with certain width.The exit portion of structure panel is to transmit the processing air-flow to semiconductor wafer, and this exit portion comprises elongate slit, and the air-flow transmission is carried out in itself and aperture, and the length of this elongate slit is at least the twice of panel body thickness.
Be used to form the device of material on semiconductor wafer, this device comprises treatment chamber, processing gas source and the die support that is formed by the chamber wall, and this die support is positioned in the process cavity, and is configured to receive semiconductor wafer.Gas distribution showerhead is above die support and comprise tapered panel, this tapered panel closes on die support, this tapered panel edge demonstrates the thickness that the thickness with respect to face plate center reduces, demonstrate from the center to the thickness of edge unanimity so that be deposited on material on the wafer, this wafer contacts with die support.
The method of distribution of gas comprises the inlet part (inlet portion) that gas is flow to gas distribution face plate from gas source in semiconductor fabrication process, this gas distribution face plate has the hole, and there is certain width in this hole, with the surface that gas is flow to semiconductor wafer from this hole by the elongate slit of the exit portion of gas distribution face plate, the length of this elongate slit is at least the twice of the thickness of gas distribution face plate.
These and other embodiment of the present invention, and feature and some potential advantage will describe in detail in conjunction with specification sheets and accompanying drawing below.
Description of drawings
Figure 1A is the sectional view of the conventional high-temperature depositing system of simplification.
Figure 1B is the panel perspective bottom view of the gas distribution showerhead of system among Figure 1A.
Fig. 2 shows the sectional view of conventional shallow trench isolation structure.
Fig. 3 A shows the photo of the wafer with usg film, and this film is to be the condition deposit of 75 mils to wafer pitch at panel with traditional sprinkler heads.
Fig. 3 B shows the photo of the wafer with usg film, and this film is to be the condition deposit of 50 mils to wafer pitch at panel with traditional sprinkler heads.
Fig. 4 A is the sectional view according to the high temperature deposition system of one embodiment of the present of invention simplification.
Fig. 4 B is the vertical view of an embodiment of panel, and this panel is used for according to gas distribution showerhead of the present invention.
Fig. 4 C is the fish-eye view of an embodiment of panel, and this panel is used for according to gas distribution showerhead of the present invention.
Fig. 4 D is the sectional view that the panel among Fig. 4 A-4B amplifies.
Fig. 5 A is the photo that shows the wafer with usg film, and this film is that to use shower nozzle according to the embodiment of the invention be the condition deposit of 75 mils to wafer pitch at panel.
Fig. 5 B is the photo that shows the wafer with usg film, and this film is that to use shower nozzle according to the embodiment of the invention be the condition deposit of 50 mils to wafer pitch at panel.
Fig. 6 A is the orthographic plan with composite panel of hole and elongate slit.
Fig. 6 B is the photo that shows the wafer with usg film, and this film is to be the condition deposit of 75 mils to wafer pitch at panel with the shower nozzle with composite hole/slot (composite hole/slot) structure.
Fig. 6 C is the photo that shows the wafer with usg film, and this film is to be the condition deposit of 50 mils to wafer pitch at panel with the shower nozzle with composite hole/slot structure.
Fig. 7 A-7D is the orthographic plan of demonstration according to the simplification of the panel of the interchangeable embodiment of the present invention, and the panel of this embodiment has multi-form elongate slit.
Fig. 8 draws in the deposition of the USG under differing temps and pressure, and sedimentation rate and panel are to the graphic representation that concerns between the wafer pitch.
Fig. 9 draws sedimentation rate and panel in a big way to the graphic representation that concerns between the wafer pitch.
Figure 10 draws for the USG depositing operation under differing temps and pressure, and film percentage of contraction and wet etching selectivity and panel are to graph of a relation between the wafer pitch.
Figure 11 A and 11B show the cross-sectional picture of fleet plough groove isolation structure, and this shallow trench cross-sectional structure is by high temperature USG formation of deposits, and this USG deposition uses traditional shower nozzle and shower nozzle of the present invention to carry out respectively.
Figure 12 draws for two panels to wafer pitch, the graphic representation that concerns between the mass rate of the increase that calculates and the distance apart from center wafer.
Figure 13 shows the sectional view according to the simplification of the interchangeable embodiment of high temperature deposition system of the present invention.
Figure 14 draws for three different panels to wafer pitch, the graphic representation that concerns between the mass rate of the increase that calculates and the distance apart from center wafer.
Embodiment
Embodiment according to gas distribution showerhead of the present invention comprises the panel with pneumatic outlet, and the form of this outlet is elongate slit or raceway groove (channel).Use elongated pneumatic outlet according to the embodiment of the invention, this significantly reduces at nearly panel to the spot of not expecting of the condition deposit material of wafer pitch and the formation of striped.Also disclose and had the shower nozzle of tapered profiles with the edge thickness of minimizing deposition material.
Fig. 4 A shows the sectional view according to the simplification of an embodiment of chemical gas-phase deposition system of the present invention.Device 300 comprises wafer 302, and this wafer is with in wafer support structure 304 contacts and be set at deposition chambers 306.Gas distribution showerhead 308 is positioned at wafer 302 tops, and separates with gap Y ' with wafer 302.
Gas distribution showerhead 308 comprises process gas inlet 310, and it carries out gas transmission with the blocker plate 312 with aperture 314.Gas distribution face plate 316 has main body 315, and the thickness of this main body is Z, and is positioned at the downstream of blocker plate 312.Panel 316 is from blocker plate 312 receiving process air-flows, and deliver a gas to wafer 302 by the apertures 318 in the main body 315.
For whole deposition apparatus is described, Fig. 4 A is simplified the aperture 318 that has constant cross-sectional profiles with demonstration.Yet the U.S. Patent No. 4854263 that transfers the application's transferee discloses the value in panel aperture, the increase of the cross section that this panel aperture demonstration and air flow line are tangent.
Fig. 4 B is (gas inlet) view of bowing of an embodiment of panel 316, and this panel 316 is used for according to gas distribution showerhead of the present invention.Fig. 4 C be panel 316 an embodiment face upward (pneumatic outlet) view, this panel 316 is used for according to gas distribution showerhead of the present invention.
Shown in Fig. 4 B, limit, the gas inlet 316a of panel 316 receives the process gas flow from the rough segmentation cloth of blocker plate, and it comprises the hole 318a that a plurality of independently diameters are X.Shown in Fig. 4 C, the pneumatic outlet limit 316b of panel 316 is sent to wafer with the process gas that segments cloth from panel, and it comprises the elongate slit 318b that a plurality of successive length are L.Elongate slit 318b can from more than one independently hole 318a receive air-flow.Have been found that it is the L elongate slit that length is provided, make panel 316 can be positioned at the contiguous place of wafer surface, and can not cause that deposition material demonstrates the shape characteristic of not expecting that as spot and striped, wherein slit length L is at least half of thickness Z of panel 316.
Fig. 4 D shows the sectional view of the amplification of panel among Fig. 4 A-4C.Fig. 4 D shows that for the specific embodiment of explanation, the cross-sectional width X of the hole 318a on the air flow inlet part is significantly narrower than the cross-sectional width X ' of the elongate slit 318b on the air stream outlet part 316b.Embodiments of the invention can utilize the ratio of X '/X to equal 2.25 or bigger elongated face plate slots.
Fig. 5 A-5B is the photo of explanation according to the material deposition results of the embodiment of the invention.Fig. 5 B is the photo that shows the wafer with usg film, and this usg film is to be the condition deposit of 75 mils to wafer pitch at panel by the shower nozzle according to embodiments of the invention.Wafer among Fig. 5 A demonstrates than using traditional sprinkler heads sedimentary film when spacing is identical as shown in Figure 3A to demonstrate spot and the striped that obviously lacks.
Fig. 5 B is the photo that shows the wafer with usg film, and this usg film is to be the condition deposit of 50 mils to wafer pitch at panel by the shower nozzle according to embodiments of the invention.Wafer among Fig. 5 B demonstrates spot and the striped that significantly lacks at the film of uniform distances deposit than the traditional sprinkler heads of using shown in Fig. 3 B.
In performance history of the present invention, the composite panel with conventional holes and elongate slit opening is used to deposit USG on wafer.Fig. 6 A shows the orthographic plan that this composite spray jet head 450 is simplified, and it comprises first area 452, and this zone comprises conventional holes 454, also comprises second area 456, and this zone comprises the elongate slit 458 according to the embodiment of the invention.
Fig. 6 B is the photo that shows the wafer with usg film, and this usg film is to be 75 mil condition deposit at panel to wafer pitch by the composite spray jet head among Fig. 6 A.Fig. 6 C is the photo that shows the wafer with usg film, and this usg film is to be 50 mil condition deposit at panel to wafer pitch by the shower nozzle with composite hole/slot structure.Fig. 6 B and Fig. 6 C disclose by the sedimentary material 402 of elongate slit and demonstrate than by the sedimentary material 400 more slick patterns of the conventional holes of composite panel.
Though top figure explanation has a plurality of successive, at the shower nozzle of the slit that exports the limit concentric orientation, this ad hoc structure is not that the present invention is necessary.Also can adopt the elongate slit of other structure, and this shower nozzle will still be within the scope of the present invention.
Fig. 7 A-7D shows that wherein each gas distribution face plate has the elongate slit of different orientation according to the upward view of the simplification of the exit portion of a plurality of interchangeable embodiment of gas distribution face plate of the present invention.Panel exit portion 660 among Fig. 7 A has a plurality of discontinuous slits 662, and they along the circumferential direction are orientated.Panel exit portion 664 among Fig. 7 B has a plurality of discontinuous slits 466, and they radially are orientated.Panel exit portion 668 among Fig. 7 C has a plurality of discontinuous slits 670, and they are taked uniquely is decentraction, does not also arrange in radial oriented mode.Panel exit portion 672 among Fig. 7 D has a plurality of discontinuous slits 674, and itself and conventional holes 676 make up.
Embodiment according to apparatus and method of the present invention provides many benefits.For example, Fig. 8 is depicted under the differing temps, and sedimentation rate and panel are to the graphic representation that concerns between the wafer pitch in the USG depositing operation.Fig. 8 shows the depositing operation occur in 510 ℃ or 540 ℃, and panel is to the increase that reduces to cause sedimentation rate of wafer pitch.Under wafer pitch, this relation is more outstanding at nearer panel.
Fig. 9 draw the USG sedimentation rate to panel widely to wafer pitch scope (50-25 mil).Fig. 9 shows under nearer spacing, and the increase of USG sedimentation rate also shows under the nearer condition of spacing, to the influence of sedimentation rate.
Figure 10 is depicted under the different temperature and pressures, and to the USG depositing operation, film percentage of contraction and wet etching selectivity and panel are to the graph of a relation between the wafer pitch.Figure 10 shows when at nearly panel during to wafer pitch, demonstrates low-shrinkage at 510 ℃ and 540 ℃ of sedimentary usg films.These data show that it is higher to form density, the film that quality is higher under nearly spacing.
Wet etch data among Figure 10 is with relevant to this discovery of settled layer of the quality-improving of wafer pitch deposit at nearly panel.Especially, sedimentary usg film has shown wet etching selectivity and more highdensity consistence when closely panel is to wafer pitch.
Figure 11 A and 11B show the photo of insulation structure of shallow groove cross section, and this structure is by using according to shower nozzle high temperature USG formation of deposits of the present invention.The USG depositing operation that Figure 11 A and 11B show occurs in 510 ℃, and panel is 75 mils to wafer pitch.Photo demonstrates at 1050 ℃, the shallow ditch groove structure that deposition back (post-deposition) 60 minutes USG of annealing fills.It is comparable that Figure 11 A and 11B demonstrate the gap quality of filling and the quality that technology obtains that adopts the traditional panel design that are obtained by the technology according to the embodiment of the invention.
Though up to the present, the present invention describes in conjunction with being used in the siliceous precursor gases that high temperature deposition do not mix up in the silex glass, and the present invention is not limited to this specific embodiment.Shower nozzle according to embodiments of the invention can be used for distributing kind gas widely, these gases are useful in the array of semiconductor fabrication process, this semiconductor fabrication process is including, but not limited to mixing up the chemical vapour deposition of silicon oxide, and the form of these silicon oxide is phosphosilicate glass (PSG), borosilicate glass (BSG) or boron phosphorus silicate glass (BPSG).
Can use example to include, but are not limited to the positive silane of tetraethyl-(TEOS), triethyl phosphate (TEPO) and triethyl borate (TEB) according to the shower nozzle distribution of gas of embodiments of the invention.The present invention is not limited to the distribution flow of precursor gases, also can be used for the gas that delivery vehicles gas such as helium and nitrogen etc. are not participated in the CVD reaction directly.
Also can be used for delivering precursor gases so that the formation of non-oxide silicon materials according to the shower nozzle of the embodiment of the invention, these materials are including, but not limited to metal, nitride and oxynitride.Though and above in conjunction with this shower nozzle of high temperature CVD process explanation, be used in delivering gas in the CVD technology of other type according to the embodiment of the embodiment of the invention, as plasma enhanced chemical vapor deposition (PECVD) technology or accurate aumospheric pressure cvd (SACVD) technology.
Also be not limited to chemical vapor deposition method according to embodiments of the invention and be used in combination.Also can be used to delivering gas in other type semiconductor manufacturing process according to shower nozzle of the present invention, as dry etching process or plasma etch process.
Also be not limited to the shower nozzle panel that use has slit according to embodiments of the invention.With reference to figure 4A, a result of shower nozzle 308 relative wafer 302 nearly spacings increases at the downward process gas flow of Waffer edge.The increase of the mass rate of Waffer edge causes that the thickness 320a at sedimentary material 320 edges increases.
Figure 12 draws for two panels to wafer pitch, the mass rate of the increase that calculates and apart from the relation curve between the distance of center wafer.Under wafer pitch, the mass rate that deposition increases is consistent relatively from the center wafer to the edge 0.270 inch conventional wide face plate.Yet under wafer pitch, the mass rate that this technology demonstrates remarkable increase flows to the wafer outer peripheral areas at 0.075 inch narrower panel.The mass rate of this increase produces deposited material layer, and this deposited material layer edge thickness is obviously thick than center thickness.
Therefore, shower nozzle alternative embodiment of the present invention can use the panel with tapered profiles to avoid nearly panel under the wafer pitch condition, and deposition material is in the increase of edge's thickness.Figure 13 shows the sectional view according to the simplification of high temperature deposition system alternative embodiment of the present invention.Device 900 comprises wafer 902, and it contacts with wafer support structure 904, and is positioned in the deposition chambers 906.Gas distribution showerhead 908 is positioned at wafer 902 tops, and with wafer 902 with gap Y " separate.
As above described in conjunction with Fig. 4 A, the nearly spacing of the relative wafer of panel can cause the increase of the flow quality of Waffer edge.Therefore, embodiment shown in Figure 13 comprises the panel 918 with tapered profiles.Especially, the edge section 918a of panel 918 is recessed with respect to the centre portions 918b of panel 918.Cone angle A representative is by the angle of face plate center to the thickness difference definition at edge, and this angle size is about 0.5 ° to 5 °.
The using gas distribution showerhead makes that sedimentary material has improved thick consistency when closely panel is to wafer pitch.Table A is tapered panel and flat panel sedimentary material when the spacing of 100 mils and 75 mils relatively, sedimentation rate, thick consistency, and thickness range.
Table A
Clearance distance (mil) | Tapered panel | Flat panel | ||||
Sedimentation rate (/min) | 1 σ consistence | Scope | Sedimentation rate (/min) | 1 σ consistence | Scope | |
????75 | ????1950 | ????7.3 | ????12.7 | ????2000 | ????13.4 | ????20.5 |
????100 | ????1600 | ????4.6 | ????7.6 | ????1890 | ????8.7 | ????13.3 |
Table A demonstrates and utilizes the tapered panel deposition to cause the formation of material layer to have more consistent center to edge thickness.Though be collected in the deposition that data reaction in the Table A utilizes tapered panel and flat panel, this flat panel has elongate slit, needn't have elongate slit according to the tapered panel of the embodiment of the invention.
Figure 14 draws three different face plate profiles, the mass rate of the increase that calculates and apart from the graph of a relation between the distance of center wafer.Figure 14 shows that the peak valley of the quality that increases changes and reduces 35% and 46% respectively by the gap being reduced gradually 0.025 inch and 0.050 inch respectively on entire wafer.According to the use of the tapered face plate structures of the embodiment of the invention, can cause the deposition of material layer to demonstrate the center and be changed to 800 dusts () or littler to edge thickness.
Here only show and certain embodiments of the invention have been described.Should be understood that the present invention can use in multiple other combination and environment, and can in the present invention's category disclosed herein, change and revise.For example, be not limited to the semiconductor wafer of processing virtually any size according to the apparatus and method of the embodiment of the invention, and be 200 millimeters wafer to relating to diameter, diameter is that the semiconductor wafer fabrication process of 300 millimeters wafer or other shape and size is all useful.
Though describe the present invention and a plurality of embodiment here in detail, these equivalences with interchangeable mode and intelligible obvious variation and revise and should comprise within the scope of the invention.
Claims (29)
1. device that is used on semiconductor wafer forming material, this device comprises:
The treatment chamber that forms by the chamber wall;
Be positioned at the die support in the described treatment chamber, construct described die support to receive semiconductor wafer;
Handle gas source; With
Gas distribution showerhead, it separates above described die support and with described die support, described gas distribution showerhead comprises the panel with inlet part, and this inlet part comprises the hole, and the elongate slit of the exit portion of itself and described panel carries out the fluid transmission.
2. device according to claim 1, the length of wherein said elongate slit is at least half of described plate thickness.
3. device according to claim 1, wherein said gas distribution showerhead further comprises blocker plate, and described blocker plate comprises perforation, and described blocker plate is positioned at the upstream of the described inlet part of described panel, and carries out the fluid transmission with it.
4. device according to claim 1, wherein said elongate slit are successive and are the communication orientation.
5. device according to claim 1, the width of the cross section of wherein said elongate slit is greater than the cross-sectional width in described hole.
6. device according to claim 5, the cross-sectional width of wherein said elongate slit are bigger 2.25 times than the cross-sectional width in described hole at least.
7. gas distribution face plate, it comprises:
Panel body, it has certain thickness;
Inlet part, it is configured to receive flow of process air, and described inlet part comprises the aperture with certain width;
Exit portion, it is configured to flow of process air is sent to semiconductor wafer, and described exit portion comprises elongate slit, and the fluid transmission is carried out in itself and described aperture.
8. gas distribution face plate according to claim 7, the length of wherein said elongate slit are at least half of thickness of described panel body.
9. gas distribution face plate according to claim 7, wherein said elongate slit are annular and are successive.
10. gas distribution face plate according to claim 7, the width of wherein said elongate slit is greater than the width in described aperture.
11. gas distribution face plate according to claim 10, the width of wherein said elongate slit are bigger 2.25 times than the width in described aperture at least.
12. a device that is used for forming material on semiconductor wafer, described device comprises:
Treatment chamber by the definition of chamber wall;
Be positioned at the die support in the described treatment chamber, construct described wafer support to receive semiconductor wafer;
Handle gas source; With
Gas distribution showerhead, it is above described die support and comprise tapered panel, the contiguous described die support of this panel, the edge of described tapered panel demonstrates the thickness that the center thickness with respect to described panel reduces, thereby produce a bevel angle, so that the material that is deposited on the wafer contacts with described die support, to demonstrate consistent center to edge thickness.
13. device according to claim 12, wherein said bevel angle is between 0.5 ° and 5 °.
14. device according to claim 12, wherein said tapered panel comprises:
Inlet part, it is configured to receive flow of process air, and described inlet part comprises the aperture with certain width;
Exit portion, it is configured to transmit described flow of process air to semiconductor wafer, and described exit portion comprises elongate slit, and the fluid transmission is carried out in itself and described aperture.
15. device according to claim 14, the length of wherein said elongate slit is at least half of described plate thickness.
16. device according to claim 14, wherein said elongate slit are annular and are successive.
17. device according to claim 14, wherein said elongate slit width is greater than the width in described aperture.
18. device according to claim 17, the width of wherein said elongate slit are bigger 2.25 times than the width in described aperture at least.
19. the method for a distribution of gas in the semiconductor fabrication process process, it comprises:
Deliver a gas to the inlet part of gas distribution face plate from source of the gas, described gas distribution face plate comprises the hole with certain width; And
The elongate slit of the exit portion by described gas distribution face plate carries described gas to semiconductor wafer surface from described hole.
20. method according to claim 19, wherein said gas is carried by elongate slit, and the length of described elongate slit is at least half of described gas distribution face plate thickness.
21. method according to claim 19, wherein at least a carrier gas and a kind of process gas are carried by described panel.
22. method according to claim 19, wherein said gas is carried in chemical vapor deposition method.
23. method according to claim 19, wherein said gas are not carry in mixing up the high temperature deposition technology of silex glass, so that the spacing between described panel and the described wafer is 300 mils or littler.
24. method according to claim 19, the wherein said gas that is transferred is selected from the group of being made up of the positive silane of tetraethyl-, triethyl phosphate, triethyl borate, ozone, oxygen, helium and nitrogen a kind of.
25. method according to claim 19, the wherein said gas that is transferred causes being selected from the deposition of the material in the group of being made up of borosilicate glass, phosphosilicate glass or boron phosphorus silicate glass.
26. method according to claim 19, wherein said gas is carried from described gas distribution face plate, and described gas distribution face plate is recessed with respect to centre portions, thereby produces the panel bevel angle between 0.5 ° to 5 °.
27. method according to claim 19, wherein said gas is carried in dry etching process.
28. a device that is used for forming material on semiconductor wafer, described device comprises:
Treatment chamber by the definition of chamber wall;
Be positioned at the die support in the described treatment chamber, it is configured to receive semiconductor wafer;
Handle gas source; With
Gas distribution showerhead, it is above described die support and comprise that tapered panel, the contiguous described die support of described panel, described tapered panel comprise,
Inlet part, it is configured to receive flow of process air, and described inlet part comprises the aperture with certain width; And
Exit portion, it is configured to transmit flow of process air to semiconductor wafer, and described exit portion comprises elongate slit, and the fluid transmission is carried out in itself and described aperture.
The edge of wherein said tapered panel demonstrates the thickness that the thickness with respect to described face plate center reduces, thereby produces bevel angle, so that the material that is deposited on the wafer contacts with described die support, with the center that the demonstrates unanimity thickness to the edge.
29. according to the described device of claim 28, wherein said bevel angle is between 0.5 ° and 5 °.
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- 2002-11-27 WO PCT/US2002/038035 patent/WO2003064725A1/en active Application Filing
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- 2002-11-27 JP JP2003564312A patent/JP4426306B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
KR20040085164A (en) | 2004-10-07 |
CN100342057C (en) | 2007-10-10 |
TWI283437B (en) | 2007-07-01 |
KR100993037B1 (en) | 2010-11-08 |
JP4426306B2 (en) | 2010-03-03 |
TW200302510A (en) | 2003-08-01 |
WO2003064725A1 (en) | 2003-08-07 |
US20030140851A1 (en) | 2003-07-31 |
JP2005516407A (en) | 2005-06-02 |
US6793733B2 (en) | 2004-09-21 |
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