CN103789747B - A kind of gas spray and make the method for this gas spray - Google Patents
A kind of gas spray and make the method for this gas spray Download PDFInfo
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- CN103789747B CN103789747B CN201210419129.7A CN201210419129A CN103789747B CN 103789747 B CN103789747 B CN 103789747B CN 201210419129 A CN201210419129 A CN 201210419129A CN 103789747 B CN103789747 B CN 103789747B
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- aperture
- graphite disk
- silicon carbide
- hole
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Abstract
The invention provides a kind of method of gas spray and this gas spray of making, described method comprises the following steps: the hole arranging several the first apertures on a graphite disk; Described graphite disk is placed in a deposition reactor, deposits one deck silicon carbide in the upper and lower surface of described graphite disk and described first aperture inwall; In the hole in described first aperture completing deposition, arrange the hole in the second aperture, described second aperture is less than described first aperture.By adopting this technical scheme, the lower surface of graphite disk and the inner wall surface of air inlet port are deposited not easily by the silicon carbide of plasma etching, thus provide cost savings simultaneously the duration of service extending gas spray.
Description
Technical field
The present invention relates to the manufacture field of semiconducter device, particularly relate to a kind of making and control the technical field that reactant gases enters the spray header of reaction chamber.
Background technology
In the manufacturing processed of semiconductor devices, such as, etch, deposit, be oxidized, in the treating processes such as sputtering, plasma body usually can be utilized to process substrate (semiconductor wafer, glass substrate etc.).Usually, for plasma processing apparatus, as the mode generating plasma body, in the plasma processing apparatus of high frequency discharge mode, comprise capacitive coupling plasma reactor and jigger coupling type plasma reactor.Described capacitively coupled reactor is configured with upper electrode and lower electrode usually, and preferably these two electrode runs parallel are arranged.And the processed substrate of mounting on lower electrode usually, the high frequency electric source generated by plasma body via integrator puts on upper electrode or lower electrode.By the high-frequency electric field generated by this high frequency electric source, the external electrical of reactant gases is accelerated, thus product plasma body carry out plasma treatment to lower substrate.
In recent years, in field of semiconductor manufacture, employ for pending substrate with the spray header of shape spray air feed.Such as in plasma etching treatment equipment, the mounting table for loading substrate is provided with in treatment chamber, the position relative with this mounting table is provided with spray header, and the surface of this spray header is provided with multiple gas squit hole, produces plasma body with shape spray supply response gas.In above-mentioned plasma processing apparatus, because produce plasma body in treatment chamber, so the temperature of spray header is general higher.
Its matrix of existing spray header is generally aluminium, but aluminium is easily corroded under plasma ambient, causes the life-span of this spray header not long.For this problem, by covering the strong aluminum oxide (Al of one deck anti-etching energy force rate aluminium at the outside surface of this matrix in prior art
2o
3), but, due to spray header its surface and Plasma contact in use, and alumina surface easily with fluorine-containing plasma reaction and generate aluminum fluoride particle, this particle is piled up gradually and is formed large particulate matter, drop and to cause polluting on wafer to be etched, thus aluminum oxide is not the tectal preferred material of spray header, is not easily produced particle contamination gradually and the silicon of excellent heat dissipation performance (thermal conductivity: 149Wm in industry
-1k
-1) or silicon carbide (thermal conductivity: 150Wm
-1k
-1) tectum replaced.
The spray header of the whole piece silicon carbide material formed by modes such as chemical vapour depositions has extraordinary corrosion resistance, but the spray header high cost that the method makes, does not possess the market competitiveness.If only at the surface-coated silicon carbide of spray header, because plasma energy is too high, can bombard the production well of spray header, cause the reduction in spray header work-ing life.
Summary of the invention
In order to solve the problem, the invention provides a kind of method of gas spray and this gas spray of making, described method comprises the following steps:
A). the hole in several the first apertures is set on a graphite disk;
B). described graphite disk is placed in a deposition reactor, deposits one deck silicon carbide at the lower surface of described graphite disk and described first aperture inwall;
C). in the hole in described first aperture completing deposition, make the hole in the second aperture, described second aperture is less than described first aperture.
Further, described deposition reaction method is chemical Vapor deposition process, and described deposition reactor is CVD (Chemical Vapor Deposition) reactor.
Further, the upper surface of described graphite disk also deposits one deck silicon carbide.
The pore diameter range of described first aperture is 1 millimeter-6 millimeters, and the pore diameter range of described second orifice is 0.1 millimeter-2 millimeters.
The upper and lower surface of described graphite disk and the thickness of silicon carbide of described first aperture inwall deposition are directly proportional to the reacting gas concentration in CVD (Chemical Vapor Deposition) reactor and reaction times.
Described silicon carbide layer deposits one deck yttrium oxide outward further, and described yttrium oxide layer is formed by chemical Vapor deposition process or plasma enhanced chemical vapor deposition method.
Further, the upper surface of described graphite disk and lower surface silicon carbide layer thickness are greater than 0.5 millimeter.
Further, the hole in described first aperture and the hole in the second aperture are uniformly distributed on described gas spray.
Further, the lower end, hole in described first aperture makes from the graphite disk surface near plasma body, and the height in the hole in described first aperture is less than the thickness of described graphite disk.
Further, the present invention also provides a kind of gas spray, described gas spray comprises a graphite disk, described graphite disk upper and lower surface applies one deck silicon carbide, described graphite disk arranges several apertures, described aperture inwall applies one deck silicon carbide, and the silicon carbide thickness of described aperture inwall coating is greater than 0.5 millimeter.
The method of making gas spray of the present invention, by twice drilling, make the inner wall surface deposition of the upper and lower surface of graphite disk and air inlet port compared with heavy thickness not easily by the silicon carbide of plasma etching, thus to provide cost savings the duration of service extending gas spray simultaneously.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 illustrates the vertical view of gas spray of the present invention;
Fig. 2 illustrates that described gas spray is along A-A cross section plane opening structure schematic diagram;
Fig. 3 illustrates that the gas spray of another embodiment is along A-A cross section plane opening structure schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
The invention provides a kind of method making gas spray, first described method comprises the following steps:, a graphite disk 10 arranges the hole 12 that several first apertures are a1, in order to make reactant gases be uniformly distributed in plasma etch chamber, the hole 12 in the first aperture is uniformly distributed on graphite disk 10; Certainly, hole 12 skewness in the first aperture on graphite disk 10 also can be set according to actual needs.Then, graphite disk 10 is placed in a deposition reactor, deposits one deck silicon carbide in hole 12 inner wall surface 24 in the upper surface 20 of graphite disk 10, lower surface 22 and the first aperture; Finally, in the hole in described first aperture completing depositing SiC, arrange the hole 14 that the second aperture is a2, described second aperture a2 is less than described first aperture a1.
Described deposition reactor can be CVD (Chemical Vapor Deposition) reactor, the graphite disk 10 being provided with the first pore 12 is placed in CVD (Chemical Vapor Deposition) reactor, reaction gas in reactor is known from experience and is grown certain thickness silicon carbide in hole 12 inner wall surface 24 in graphite disk upper surface 20, lower surface 22 and the first aperture, technology due to depositing silicon carbide in CVD (Chemical Vapor Deposition) reactor is prior art, a large amount of patent documentations and paper are described in detail it and describe, and are no longer repeated at this.
Through the graphite disk of chemical vapour deposition, hole 12 inner wall surface in the first aperture deposited one deck silicon carbide, aperture diminishes and rough, the hole 14 in the second aperture is made in the central position, hole 12 in the first aperture, first aperture a1 scope is 1 millimeter-6 millimeters, the too small meeting of scope in the first aperture causes the silicon carbide layer thickness of deposition too small, and the scope in the first aperture is crossed conference and caused the spacing of the enterprising pore of graphite disk excessive; The aperture a2 scope of second orifice is 0.1 millimeter-2 millimeters.The thickness of silicon carbide that hole 12 inner wall surface 24 in described graphite disk upper surface 20, lower surface 22 and the first aperture deposits is directly proportional to the reacting gas concentration in CVD (Chemical Vapor Deposition) reactor and reaction times.
Through the graphite disk of chemical vapour deposition, upper surface 20, lower surface 22 are rough, cut it as required, while guarantee reaches desired thickness, make upper surface 20, lower surface 22 smooth surface, the thickness of lower surface 22 silicon carbide after cutting is not less than 0.5 millimeter.The present embodiment is softer due to graphite material, although upper surface 20 can not contact with plasma body, for ease of installing, carries out chemical vapour deposition to upper surface 20 simultaneously.
In order to improve the work-ing life of gas spray further, can deposit one deck yttrium oxide further after depositing SiC completes, described yttrium oxide layer is formed by chemical Vapor deposition process or plasma enhanced chemical vapor deposition method.At least one in yttrium fluoride, Erbium trioxide, silicon carbide, silicon nitride, zirconium white, aluminum oxide is also mixed with in described yttrium oxide layer.
Because plasma body can only corrode the part of air inlet port near plasma body one end, in a further embodiment, in order to reduce the gas needed for depositing SiC, can when arranging the first pore 312 incomplete penetration graphite disk 10, then graphite disk 10 is placed in a deposition reactor, deposits one deck silicon carbide in hole 312 inner wall surface 324 in the upper surface 20 of graphite disk 10, lower surface 22 and the first aperture; Finally, in the hole 312 in described first aperture completing deposition, arrange the hole 314 in the second aperture, described second aperture is less than described first aperture.
Other technologies scheme in the present embodiment is identical with above-described embodiment, is not repeated at this.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (10)
1. make a method for gas spray, it is characterized in that, described method comprises the following steps:
A). the hole in several the first apertures is set on a graphite disk;
B). described graphite disk is placed in a deposition reactor, deposits one deck silicon carbide at the lower surface of described graphite disk and described first aperture inwall;
C). in the hole in described first aperture completing deposition, make the hole in the second aperture, described second aperture is less than described first aperture.
2. method according to claim 1, is characterized in that: described deposition reaction method is chemical Vapor deposition process, and described deposition reactor is CVD (Chemical Vapor Deposition) reactor.
3. method according to claim 1, is characterized in that: also deposit one deck silicon carbide at the upper surface of described graphite disk.
4. method according to claim 1, is characterized in that: the pore diameter range of described first aperture is 1 millimeter-6 millimeters, and the pore diameter range of described second orifice is 0.1 millimeter-2 millimeters.
5. method according to claim 1, is characterized in that: the upper and lower surface of described graphite disk and the thickness of silicon carbide of described first aperture inwall deposition are directly proportional to the reacting gas concentration in CVD (Chemical Vapor Deposition) reactor and reaction times.
6. method according to claim 1, is characterized in that: described silicon carbide layer deposits one deck yttrium oxide outward further, and described yttrium oxide layer is formed by chemical Vapor deposition process or plasma enhanced chemical vapor deposition method.
7. method according to claim 1, is characterized in that: described silicon carbide layer thickness is greater than 0.5 millimeter.
8. method according to claim 1, is characterized in that: the hole in described first aperture and the hole in the second aperture are uniformly distributed on described gas spray.
9. method according to claim 1, is characterized in that: the lower end, hole in described first aperture makes from the graphite disk surface near plasma body, and the height in the hole in described first aperture is less than the thickness of described graphite disk.
10. a gas spray, described gas spray comprises a graphite disk, described graphite disk upper and lower surface applies one deck silicon carbide, it is characterized in that: described graphite disk arranges several apertures, described aperture inwall applies one deck silicon carbide, and the silicon carbide thickness of described aperture inwall coating is greater than 0.5 millimeter.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210419129.7A CN103789747B (en) | 2012-10-26 | 2012-10-26 | A kind of gas spray and make the method for this gas spray |
| TW102137389A TW201416489A (en) | 2012-10-26 | 2013-10-16 | Gas spray head and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210419129.7A CN103789747B (en) | 2012-10-26 | 2012-10-26 | A kind of gas spray and make the method for this gas spray |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103789747A CN103789747A (en) | 2014-05-14 |
| CN103789747B true CN103789747B (en) | 2016-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210419129.7A Active CN103789747B (en) | 2012-10-26 | 2012-10-26 | A kind of gas spray and make the method for this gas spray |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103789747B (en) |
| TW (1) | TW201416489A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
| CN112908819B (en) * | 2019-12-03 | 2022-04-01 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101255552A (en) * | 2007-02-27 | 2008-09-03 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
| CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| US8137467B2 (en) * | 2007-10-16 | 2012-03-20 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US20100037823A1 (en) * | 2008-08-18 | 2010-02-18 | Applied Materials, Inc. | Showerhead and shadow frame |
| CN102246274A (en) * | 2008-10-10 | 2011-11-16 | 奥塔装置公司 | Concentric showerhead for vapor deposition |
| KR101037189B1 (en) * | 2008-11-11 | 2011-05-26 | 세메스 주식회사 | Shadow frame for plasma enhanced chemical vapor deposition apparatus |
| EP2409324A4 (en) * | 2009-03-16 | 2013-05-15 | Alta Devices Inc | Wafer carrier track |
| TWI507561B (en) * | 2010-12-10 | 2015-11-11 | Ind Tech Res Inst | Showerhead integrating intake and exhaust |
| TWI534291B (en) * | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | Showerhead assembly |
| TWM430477U (en) * | 2011-12-29 | 2012-06-01 | Ind Tech Res Inst | Server cabinet |
| TWM430479U (en) * | 2011-12-29 | 2012-06-01 | Ind Tech Res Inst | Gas showerhead |
-
2012
- 2012-10-26 CN CN201210419129.7A patent/CN103789747B/en active Active
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- 2013-10-16 TW TW102137389A patent/TW201416489A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101255552A (en) * | 2007-02-27 | 2008-09-03 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
| CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201416489A (en) | 2014-05-01 |
| TWI496944B (en) | 2015-08-21 |
| CN103789747A (en) | 2014-05-14 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CP01 | Change in the name or title of a patent holder |