CN103789747A - Gas spray head and making method of gas spray head - Google Patents
Gas spray head and making method of gas spray head Download PDFInfo
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- CN103789747A CN103789747A CN201210419129.7A CN201210419129A CN103789747A CN 103789747 A CN103789747 A CN 103789747A CN 201210419129 A CN201210419129 A CN 201210419129A CN 103789747 A CN103789747 A CN 103789747A
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- aperture
- silicon carbide
- graphite disk
- hole
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Abstract
The invention provides a gas spray head and a making method of the gas spray head, wherein the method comprises the following steps: a plurality of first-aperture holes are arranged on a graphite disc; the graphite disc is placed in a deposition reactor, the upper surface and the lower surface of the graphite disc and the inner wall of the first-aperture holes are deposited with a layer of silicon carbide; second-aperture holes are arranged in the deposited first-aperture holes, and the second-aperture holes are smaller than the first-aperture holes. By adopting the technical scheme, the silicon carbide which is not easy to be corroded by plasma is deposited on the lower surface of the graphite disc and the inner wall surface of gas inlet holes, so that the service life of the gas spray head is prolonged, and the cost is saved.
Description
Technical field
The present invention relates to the manufacture field of semiconducter device, relate in particular to a kind of making and control the technical field that reactant gases enters the spray header of reaction chamber.
Background technology
In the manufacturing processed of semiconductor devices, such as, in the treating processess such as etching, deposition, oxidation, sputter, conventionally can utilize plasma body to process substrate (semiconductor wafer, glass substrate etc.).Usually, for plasma processing apparatus, as the mode that generates plasma body, in the plasma processing apparatus of high frequency discharge mode, comprise capacitive coupling plasma reactor and jigger coupling type plasma reactor.Described condenser coupling type reactor disposes upper electrode and lower electrode conventionally, and preferably these two electrodes be arranged in parallel.And, conventionally on lower electrode, loading processed substrate, the high frequency electric source that plasma body is generated to use via integrator puts on upper electrode or lower electrode.By the high-frequency electric field being generated by this high frequency electric source, the external electrical of reactant gases is accelerated, thereby produce plasma body, lower substrate is carried out to plasma treatment.
In recent years, in field of semiconductor manufacture, used for the spray header with shape spray air feed to pending substrate.For example, in plasma etching treatment equipment, in treatment chamber, be provided with the mounting table for loading substrate, the position relative with this mounting table is provided with spray header, and the surface of this spray header is provided with multiple gas squit holes, produces plasma body with shape spray supply response gas.In above-mentioned plasma processing apparatus, because produce plasma body in treatment chamber, so the temperature of spray header is generally higher.
Its matrix of existing spray header is generally aluminium, but aluminium is easily corroded under plasma ambient, causes the life-span of this spray header not long.For this problem, in prior art, cover the strong aluminum oxide (Al of one deck anti-etching energy force rate aluminium by the outside surface at this matrix
2o
3), but, because spray header contacts with plasma body on its surface in use, and alumina surface easily generates aluminum fluoride particle with fluorine-containing plasma reaction, this particle is piled up gradually and is formed large particulate matter, drop and on wafer to be etched, can cause polluting, thereby aluminum oxide is not the tectal preferred material of spray header, in industry, be difficult for producing gradually the silicon (thermal conductivity: 149Wm of particle contamination and excellent heat dissipation performance
-1k
-1) or silicon carbide (thermal conductivity: 150Wm
-1k
-1) tectum replaces.
The spray header of the whole piece silicon carbide material forming by modes such as chemical vapour depositions has extraordinary corrosion resistance, but the spray header high cost that the method is made, does not possess the market competitiveness.If only, at the surface-coated silicon carbide of spray header, because plasma energy is too high, can bombard the production well of spray header, cause the spray header reduction in work-ing life.
Summary of the invention
In order to address the above problem, a kind of method that the invention provides gas spray and make this gas spray, described method comprises the following steps:
A). the hole in several the first apertures is set on a graphite disk;
B). described graphite disk is placed in a deposition reactor, at lower surface and described first aperture inwall deposition one deck silicon carbide of described graphite disk;
C). in the hole in described the first aperture that completes deposition, make the hole in the second aperture, described the second aperture is less than described the first aperture.
Further, described deposition reaction method is chemical Vapor deposition process, and described deposition reactor is CVD (Chemical Vapor Deposition) reactor.
Further, the upper surface of described graphite disk also deposits one deck silicon carbide.
The pore diameter range of described the first aperture is 1 millimeter-6 millimeters, and the pore diameter range of described second orifice is 0.1 millimeter-2 millimeters.
The thickness of the silicon carbide of the upper and lower surface of described graphite disk and described the first aperture inwall deposition was directly proportional to reacting gas concentration and reaction times in CVD (Chemical Vapor Deposition) reactor.
The outer further deposition of described silicon carbide layer one deck yttrium oxide, described yttrium oxide layer forms by chemical Vapor deposition process or plasma enhanced chemical vapor deposition method.
Further, the upper surface of described graphite disk and lower surface silicon carbide layer thickness are greater than 0.5 millimeter.
Further, the hole in the hole in described the first aperture and the second aperture is uniformly distributed on described gas spray.
Further, the lower end, hole in described the first aperture is from starting to make near the graphite disk surface of plasma body, and the height in the hole in described the first aperture is less than the thickness of described graphite disk.
Further, the present invention also provides a kind of gas spray, described gas spray comprises a graphite disk, described graphite disk upper and lower surface applies one deck silicon carbide, described graphite disk arranges several apertures, described aperture inwall applies one deck silicon carbide, and the silicon carbide thickness that described aperture inwall applies is greater than 0.5 millimeter.
The method of making gas spray of the present invention, by twice drilling, make being difficult for by the silicon carbide of plasma etching of the upper and lower surface of graphite disk and the larger thickness of the inner wall surface of air inlet port deposition, thereby provide cost savings the duration of service of prolongation gas spray simultaneously.
Accompanying drawing explanation
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 illustrates the vertical view of gas spray of the present invention;
Fig. 2 illustrates that described gas spray is along A-A cross section plane opening structure schematic diagram;
Fig. 3 illustrates that the gas spray of another embodiment is along A-A cross section plane opening structure schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
The invention provides a kind of method of making gas spray, first described method comprises the following steps:, the hole 12 that several first apertures are a1 is set on a graphite disk 10, for reactant gases is uniformly distributed in plasma etch chamber, the hole 12 in the first aperture is uniformly distributed on graphite disk 10; Hole 12 skewness in the first aperture on graphite disk 10 also can be set certainly, according to actual needs.Then, graphite disk 10 is placed in a deposition reactor, deposits one deck silicon carbide in hole 12 inner wall surface 24 in upper surface 20, lower surface 22 and first aperture of graphite disk 10; Finally, in the hole in described the first aperture that completes silicon carbide deposition, the hole 14 that the second aperture is a2 is set, described the second aperture a2 is less than described the first aperture a1.
Described deposition reactor can be CVD (Chemical Vapor Deposition) reactor, the graphite disk 10 that is provided with the first hole, aperture 12 is placed in CVD (Chemical Vapor Deposition) reactor, reaction gas in reactor is known from experience at the hole in graphite disk upper surface 20, lower surface 22 and the first aperture 12 inner wall surface 24 certain thickness silicon carbide of growing, because the technology of depositing silicon carbide in CVD (Chemical Vapor Deposition) reactor is prior art, a large amount of patent documentations and paper are described in detail and describe it, are no longer repeated at this.
Through the graphite disk of chemical vapour deposition, hole 12 inner wall surface in the first aperture have deposited one deck silicon carbide, aperture diminishes and is rough, make the hole 14 in the second aperture in 12 central positions, hole in the first aperture, the first aperture a1 scope is 1 millimeter-6 millimeters, the too small meeting of scope in the first aperture causes the silicon carbide layer thickness of deposition too small, and the scope in the first aperture is crossed conference and caused the spacing of the enterprising pore of graphite disk excessive; The aperture a2 scope of second orifice is 0.1 millimeter-2 millimeters.The thickness of the silicon carbide that hole 12 inner wall surface 24 in described graphite disk upper surface 20, lower surface 22 and the first aperture deposit was directly proportional to reacting gas concentration and reaction times in CVD (Chemical Vapor Deposition) reactor.
Through the graphite disk of chemical vapour deposition, upper surface 20, lower surface 22 are rough, as required it is cut, in guaranteeing to reach desired thickness, make upper surface 20, lower surface 22 smooth surfaces, the thickness of lower surface 22 silicon carbide after cutting is not less than 0.5 millimeter.The present embodiment, because graphite material is softer, although upper surface 20 can not contact with plasma body, for ease of installing, carries out chemical vapour deposition to upper surface 20 simultaneously.
In order further to improve the work-ing life of gas spray, can after having deposited, silicon carbide further deposit one deck yttrium oxide, and described yttrium oxide layer forms by chemical Vapor deposition process or plasma enhanced chemical vapor deposition method.In described yttrium oxide layer, be also mixed with at least one in yttrium fluoride, Erbium trioxide, silicon carbide, silicon nitride, zirconium white, aluminum oxide.
Because plasma body can only corrode the part of air inlet port near plasma body one end, in a further embodiment, deposit required gas in order to reduce silicon carbide, can be in the time that the first hole 312, aperture be set incomplete penetration graphite disk 10, then graphite disk 10 is placed in a deposition reactor, deposits one deck silicon carbide in hole 312 inner wall surface 324 in upper surface 20, lower surface 22 and first aperture of graphite disk 10; Finally, in the interior hole 314 that the second aperture is set, hole 312 in described the first aperture that completes deposition, described the second aperture is less than described the first aperture.
Other technologies scheme in the present embodiment is identical with above-described embodiment, is not repeated at this.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and modification, therefore protection scope of the present invention should be as the criterion with the scope that the claims in the present invention were defined.
Claims (10)
1. a method of making gas spray, is characterized in that, described method comprises the following steps:
A). the hole in several the first apertures is set on a graphite disk;
B). described graphite disk is placed in a deposition reactor, at lower surface and described first aperture inwall deposition one deck silicon carbide of described graphite disk;
C). in the hole in described the first aperture that completes deposition, make the hole in the second aperture, described the second aperture is less than described the first aperture.
2. method according to claim 1, is characterized in that: described deposition reaction method is chemical Vapor deposition process, and described deposition reactor is CVD (Chemical Vapor Deposition) reactor.
3. method according to claim 1, is characterized in that: the upper surface at described graphite disk also deposits one deck silicon carbide.
4. method according to claim 1, is characterized in that: the pore diameter range of described the first aperture is 1 millimeter-6 millimeters, and the pore diameter range of described second orifice is 0.1 millimeter-2 millimeters.
5. method according to claim 1, is characterized in that: the thickness of the silicon carbide of the upper and lower surface of described graphite disk and described the first aperture inwall deposition was directly proportional to reacting gas concentration and reaction times in CVD (Chemical Vapor Deposition) reactor.
6. method according to claim 1, is characterized in that: the outer further deposition of described silicon carbide layer one deck yttrium oxide, described yttrium oxide layer forms by chemical Vapor deposition process or plasma enhanced chemical vapor deposition method.
7. method according to claim 1, is characterized in that: described silicon carbide layer thickness is greater than 0.5 millimeter.
8. method according to claim 1, is characterized in that: the hole in the hole in described the first aperture and the second aperture is uniformly distributed on described gas spray.
9. method according to claim 1, is characterized in that: the lower end, hole in described the first aperture is from starting to make near the graphite disk surface of plasma body, and the height in the hole in described the first aperture is less than the thickness of described graphite disk.
10. a gas spray, described gas spray comprises a graphite disk, described graphite disk upper and lower surface applies one deck silicon carbide, it is characterized in that: described graphite disk arranges several apertures, described aperture inwall applies one deck silicon carbide, and the silicon carbide thickness that described aperture inwall applies is greater than 0.5 millimeter.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210419129.7A CN103789747B (en) | 2012-10-26 | 2012-10-26 | A kind of gas spray and make the method for this gas spray |
| TW102137389A TW201416489A (en) | 2012-10-26 | 2013-10-16 | Gas spray head and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210419129.7A CN103789747B (en) | 2012-10-26 | 2012-10-26 | A kind of gas spray and make the method for this gas spray |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103789747A true CN103789747A (en) | 2014-05-14 |
| CN103789747B CN103789747B (en) | 2016-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210419129.7A Active CN103789747B (en) | 2012-10-26 | 2012-10-26 | A kind of gas spray and make the method for this gas spray |
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| Country | Link |
|---|---|
| CN (1) | CN103789747B (en) |
| TW (1) | TW201416489A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908819A (en) * | 2019-12-03 | 2021-06-04 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
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| CN101255552A (en) * | 2007-02-27 | 2008-09-03 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
| KR20100052829A (en) * | 2008-11-11 | 2010-05-20 | 세메스 주식회사 | Shadow frame for plasma enhanced chemical vapor deposition apparatus |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
| CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
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| US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| US8137467B2 (en) * | 2007-10-16 | 2012-03-20 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US20100037823A1 (en) * | 2008-08-18 | 2010-02-18 | Applied Materials, Inc. | Showerhead and shadow frame |
| CN102246274A (en) * | 2008-10-10 | 2011-11-16 | 奥塔装置公司 | Concentric showerhead for vapor deposition |
| EP2409324A4 (en) * | 2009-03-16 | 2013-05-15 | Alta Devices Inc | Wafer carrier track |
| TWI507561B (en) * | 2010-12-10 | 2015-11-11 | Ind Tech Res Inst | Showerhead integrating intake and exhaust |
| TWI534291B (en) * | 2011-03-18 | 2016-05-21 | 應用材料股份有限公司 | Showerhead assembly |
| TWM430477U (en) * | 2011-12-29 | 2012-06-01 | Ind Tech Res Inst | Server cabinet |
| TWM430479U (en) * | 2011-12-29 | 2012-06-01 | Ind Tech Res Inst | Gas showerhead |
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2012
- 2012-10-26 CN CN201210419129.7A patent/CN103789747B/en active Active
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- 2013-10-16 TW TW102137389A patent/TW201416489A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101255552A (en) * | 2007-02-27 | 2008-09-03 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
| KR20100052829A (en) * | 2008-11-11 | 2010-05-20 | 세메스 주식회사 | Shadow frame for plasma enhanced chemical vapor deposition apparatus |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
| CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908819A (en) * | 2019-12-03 | 2021-06-04 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
| CN112908819B (en) * | 2019-12-03 | 2022-04-01 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201416489A (en) | 2014-05-01 |
| TWI496944B (en) | 2015-08-21 |
| CN103789747B (en) | 2016-03-09 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CP01 | Change in the name or title of a patent holder |