CN1647593A - Ecr等离子体源和ecr等离子体装置 - Google Patents
Ecr等离子体源和ecr等离子体装置 Download PDFInfo
- Publication number
- CN1647593A CN1647593A CNA038077477A CN03807747A CN1647593A CN 1647593 A CN1647593 A CN 1647593A CN A038077477 A CNA038077477 A CN A038077477A CN 03807747 A CN03807747 A CN 03807747A CN 1647593 A CN1647593 A CN 1647593A
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- Prior art keywords
- plasma
- microwave
- ecr
- test portion
- peristome
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008676 import Effects 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005507 spraying Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
- H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP106710/2002 | 2002-04-09 | ||
JP2002106710A JP4173679B2 (ja) | 2002-04-09 | 2002-04-09 | Ecrプラズマ源およびecrプラズマ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1647593A true CN1647593A (zh) | 2005-07-27 |
CN100348078C CN100348078C (zh) | 2007-11-07 |
Family
ID=28786436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038077477A Expired - Fee Related CN100348078C (zh) | 2002-04-09 | 2003-04-09 | Ecr等离子体源和ecr等离子体装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7485204B2 (zh) |
EP (1) | EP1494512B1 (zh) |
JP (1) | JP4173679B2 (zh) |
KR (1) | KR100802201B1 (zh) |
CN (1) | CN100348078C (zh) |
AU (1) | AU2003236008A1 (zh) |
DE (1) | DE60330655D1 (zh) |
WO (1) | WO2003086032A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100405878C (zh) * | 2005-12-07 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体刻蚀装置 |
CN101248707B (zh) * | 2005-08-24 | 2011-08-31 | 陶氏康宁公司 | 制造等离子体的方法和装置 |
CN103114278A (zh) * | 2013-02-06 | 2013-05-22 | 上海君威新能源装备有限公司 | 平面磁控ecr-pecvd等离子源装置 |
CN105836165A (zh) * | 2016-05-05 | 2016-08-10 | 哈尔滨工业大学 | 空间环境地面模拟等离子体产生装置及采用该装置实现的等离子体产生方法 |
CN106561446A (zh) * | 2016-10-27 | 2017-04-19 | 合肥优亿科机电科技有限公司 | 微波源高密度低能离子束生物改性设备 |
CN108566717A (zh) * | 2018-06-29 | 2018-09-21 | 合肥中科离子医学技术装备有限公司 | 采用微波垂直注入激励等离子体发生装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007111076A1 (ja) | 2006-03-24 | 2007-10-04 | Konica Minolta Medical & Graphic, Inc. | 透明バリア性シートおよび透明バリア性シートの製造方法 |
JPWO2007111075A1 (ja) | 2006-03-24 | 2009-08-06 | コニカミノルタエムジー株式会社 | 透明バリア性シート及び透明バリア性シートの製造方法 |
WO2007111098A1 (ja) | 2006-03-24 | 2007-10-04 | Konica Minolta Medical & Graphic, Inc. | 透明バリア性シート及びその製造方法 |
JPWO2007111074A1 (ja) | 2006-03-24 | 2009-08-06 | コニカミノルタエムジー株式会社 | 透明バリア性シート及び透明バリア性シートの製造方法 |
JPWO2007111092A1 (ja) | 2006-03-24 | 2009-08-06 | コニカミノルタエムジー株式会社 | 透明バリア性シートおよび透明バリア性シートの製造方法 |
KR100819902B1 (ko) * | 2007-05-25 | 2008-04-08 | 주식회사 제너럴디스플레이 | 펄스형 마이크로파의 합성을 이용한 대면적 전자싸이클로트론 공진 플라즈마장치 |
JP5216446B2 (ja) * | 2007-07-27 | 2013-06-19 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及び表示装置の作製方法 |
TW201141316A (en) * | 2010-05-04 | 2011-11-16 | Ind Tech Res Inst | A linear-type microwave plasma source using rectangular waveguide with a biased slot as the plasma reactor |
CN102254776A (zh) * | 2010-05-19 | 2011-11-23 | 财团法人工业技术研究院 | 具有偏心开槽可变介质导波管的线型微波等离子体源 |
US9013191B2 (en) | 2011-09-12 | 2015-04-21 | The United States Of America As Represented By The Secretary Of The Army | Microwave cavity with dielectric region and method thereof |
FR3042797B1 (fr) | 2015-10-27 | 2021-01-22 | Commissariat Energie Atomique | Dispositif pour la fabrication d'une couche en carbone amorphe par plasma a la resonance cyclotron electronique |
KR102164480B1 (ko) * | 2019-02-14 | 2020-10-13 | 주식회사 쌤빛 | 개선된 ecr 균일 플라즈마 발생 장치 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947728A (ja) | 1982-09-10 | 1984-03-17 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ付着方法および装置 |
JPS62152127A (ja) * | 1985-12-25 | 1987-07-07 | Sumitomo Metal Ind Ltd | プラズマ装置 |
JPH0770519B2 (ja) * | 1986-02-28 | 1995-07-31 | 日本電信電話株式会社 | プラズマ処理装置 |
JPS62229841A (ja) * | 1986-03-28 | 1987-10-08 | Anelva Corp | 真空処理装置 |
JPH01134926A (ja) * | 1987-11-20 | 1989-05-26 | Nippon Telegr & Teleph Corp <Ntt> | プラズマ生成源およびそれを用いたプラズマ処理装置 |
US4893584A (en) | 1988-03-29 | 1990-01-16 | Energy Conversion Devices, Inc. | Large area microwave plasma apparatus |
JP2902009B2 (ja) * | 1989-10-16 | 1999-06-07 | 株式会社日立製作所 | マイクロ波プラズマ処理装置および処理方法 |
JP2537304B2 (ja) | 1989-12-07 | 1996-09-25 | 新技術事業団 | 大気圧プラズマ反応方法とその装置 |
JPH0562940A (ja) * | 1991-09-03 | 1993-03-12 | Sony Corp | 矩形基板のドライエツチング装置 |
FR2691035B1 (fr) | 1992-05-07 | 1994-06-17 | France Telecom | Dispositif et machine a plasma de traitement chimique et procede utilisant ce dispositif. |
DE69318480T2 (de) * | 1992-06-23 | 1998-09-17 | Nippon Telegraph & Telephone | Plasmabearbeitungsgerät |
EP0702393A3 (en) * | 1994-09-16 | 1997-03-26 | Daihen Corp | Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber |
FR2733384B1 (fr) | 1995-04-21 | 1997-07-04 | Univ Lille Sciences Tech | Dispositif pour creer deux ou plusieurs decharges plasma dans un meme tube guide d'onde |
KR100197113B1 (ko) | 1995-08-25 | 1999-06-15 | 니시마쓰 다이조 | 장방형 도파관에서 긴 슬롯을 통해 플라즈마실에 마이크로웨이브를 조사하는 플라즈마 처리장치 |
US5961851A (en) * | 1996-04-02 | 1999-10-05 | Fusion Systems Corporation | Microwave plasma discharge device |
US5975014A (en) * | 1996-07-08 | 1999-11-02 | Asm Japan K.K. | Coaxial resonant multi-port microwave applicator for an ECR plasma source |
US5707452A (en) * | 1996-07-08 | 1998-01-13 | Applied Microwave Plasma Concepts, Inc. | Coaxial microwave applicator for an electron cyclotron resonance plasma source |
JP2000312045A (ja) | 1999-02-26 | 2000-11-07 | Tadahiro Omi | レーザ発振装置、露光装置及びデバイスの製造方法 |
US6186090B1 (en) * | 1999-03-04 | 2001-02-13 | Energy Conversion Devices, Inc. | Apparatus for the simultaneous deposition by physical vapor deposition and chemical vapor deposition and method therefor |
US6169466B1 (en) * | 1999-05-10 | 2001-01-02 | Com Dev Limited | Corrugated waveguide filter having coupled resonator cavities |
US6246175B1 (en) * | 1999-10-25 | 2001-06-12 | National Science Council | Large area microwave plasma generator |
JP4441038B2 (ja) * | 2000-02-07 | 2010-03-31 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
JP4358076B2 (ja) * | 2004-09-17 | 2009-11-04 | 株式会社小糸製作所 | 車両用灯具 |
-
2002
- 2002-04-09 JP JP2002106710A patent/JP4173679B2/ja not_active Expired - Lifetime
-
2003
- 2003-04-09 EP EP03745980A patent/EP1494512B1/en not_active Expired - Fee Related
- 2003-04-09 AU AU2003236008A patent/AU2003236008A1/en not_active Abandoned
- 2003-04-09 DE DE60330655T patent/DE60330655D1/de not_active Expired - Lifetime
- 2003-04-09 KR KR1020047015840A patent/KR100802201B1/ko active IP Right Grant
- 2003-04-09 CN CNB038077477A patent/CN100348078C/zh not_active Expired - Fee Related
- 2003-04-09 WO PCT/JP2003/004481 patent/WO2003086032A1/ja active Application Filing
- 2003-04-09 US US10/510,479 patent/US7485204B2/en not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101248707B (zh) * | 2005-08-24 | 2011-08-31 | 陶氏康宁公司 | 制造等离子体的方法和装置 |
CN100405878C (zh) * | 2005-12-07 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体刻蚀装置 |
CN103114278A (zh) * | 2013-02-06 | 2013-05-22 | 上海君威新能源装备有限公司 | 平面磁控ecr-pecvd等离子源装置 |
CN103114278B (zh) * | 2013-02-06 | 2014-12-24 | 上海君威新能源装备有限公司 | 平面磁控ecr-pecvd等离子源装置 |
CN105836165A (zh) * | 2016-05-05 | 2016-08-10 | 哈尔滨工业大学 | 空间环境地面模拟等离子体产生装置及采用该装置实现的等离子体产生方法 |
CN106561446A (zh) * | 2016-10-27 | 2017-04-19 | 合肥优亿科机电科技有限公司 | 微波源高密度低能离子束生物改性设备 |
CN108566717A (zh) * | 2018-06-29 | 2018-09-21 | 合肥中科离子医学技术装备有限公司 | 采用微波垂直注入激励等离子体发生装置 |
Also Published As
Publication number | Publication date |
---|---|
CN100348078C (zh) | 2007-11-07 |
US20050145339A1 (en) | 2005-07-07 |
EP1494512A1 (en) | 2005-01-05 |
AU2003236008A1 (en) | 2003-10-20 |
KR100802201B1 (ko) | 2008-02-11 |
JP4173679B2 (ja) | 2008-10-29 |
EP1494512A4 (en) | 2006-09-13 |
US7485204B2 (en) | 2009-02-03 |
EP1494512B1 (en) | 2009-12-23 |
JP2003303698A (ja) | 2003-10-24 |
DE60330655D1 (de) | 2010-02-04 |
WO2003086032A1 (fr) | 2003-10-16 |
KR20040111486A (ko) | 2004-12-31 |
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Owner name: MES AFTY CO., LTD. Free format text: FORMER NAME: NTT AFTY ENGINEERING CO., LTD. |
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Address after: Tokyo, Japan Patentee after: MES AFTY Co. Address before: Tokyo, Japan Patentee before: NTT afty Engineering Co.,Ltd. |
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Owner name: JSWAFTY CO., LTD. Free format text: FORMER OWNER: MES AFTY CO., LTD. Effective date: 20141027 |
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Effective date of registration: 20141027 Address after: Tokyo, Japan Patentee after: JSWAFTY Limited by Share Ltd. Address before: Tokyo, Japan Patentee before: MES AFTY Co. |
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