CN1617300A - 多晶硅薄膜的制造方法和用多晶硅薄膜制造的显示器件 - Google Patents

多晶硅薄膜的制造方法和用多晶硅薄膜制造的显示器件 Download PDF

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CN1617300A
CN1617300A CNA2004101005988A CN200410100598A CN1617300A CN 1617300 A CN1617300 A CN 1617300A CN A2004101005988 A CNA2004101005988 A CN A2004101005988A CN 200410100598 A CN200410100598 A CN 200410100598A CN 1617300 A CN1617300 A CN 1617300A
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朴志容
朴惠香
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Samsung Display Co Ltd
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Abstract

本发明涉及一种多晶硅薄膜的制造方法，该方法通过使用具有激光透射区和非透射区混合结构的掩模而能够利用激光得到均匀结晶的多晶硅薄膜，其中激光透射区基于激光扫描方向轴线不对称，激光透射区基于某一中心轴线对称，将激光透射区在平行于该中心轴线的另一轴线的方向上移动一定距离，从而使激光透射区和非激光透射区交替地设置。

Description

多晶硅薄膜的制造方法和用多晶硅薄膜制造的显示器件
技术领域
本发明涉及一种用于设备中的多晶硅薄膜的制造方法和使用由该方法制造的多晶硅薄膜的设备，特别涉及能控制多晶硅薄膜晶粒形状的多晶硅薄膜的制造方法和使用多晶硅薄膜的设备。
背景技术
通常，连续横向固化(SLS)结晶法通过将激光束两次或更多次地照射在非晶硅层上来横向生长晶粒硅。如此形成的多晶硅晶粒为柱状；此外，由于晶粒的有限尺寸，在相邻的晶粒间出现晶粒边界。
通过SLS结晶技术可以在衬底上形成多晶或单晶的大硅晶粒，并且能获得与由单晶硅制造的薄膜晶体管(TFT)相似的特性。
图1A、图1B、图1C示出了普通的SLS结晶法。
在图1A中示出的SLS结晶法中，激光束穿过具有激光束透射区和激光束非透射区的掩模照射在非晶硅薄膜层上，从而熔化激光束透射区的非晶硅。
如果在激光束照射结束后开始冷却，那么结晶优先发生在非晶硅和熔化硅之间的界面处，其中形成从非晶硅和熔化硅界面向熔化硅层方向温度逐渐减小的温度梯度。
因此，参见图1B，由于热通量在从掩模的界面向熔化硅层中心部分的方向上流动，因此形成了具有横向生长的柱状晶粒的多晶硅薄膜层。多晶硅横向生长直到熔化硅层完全固化。
如图1C所示，通过移动载物台进而移动掩模、并且将激光束照射在非晶硅薄膜层和已结晶多晶硅层的露出部分上，将非晶硅和晶体硅熔化。硅原子粘附在被掩模覆盖的已形成的多晶硅晶粒上，所以在熔化以后当熔化非晶硅和晶体硅冷却时晶粒的长度增加。
图2A、图2B、图2C示出用普通制造多晶硅薄膜的掩模结构形成结晶晶粒硅的方法，图3A、图3B、图3C示出多晶硅薄膜制造的不同阶段的平面图。
在图2A中，使用具有激光束透射区和激光束非透射区的普通掩模将激光束照射在非晶硅上，使非晶硅熔化。当熔化非晶硅固化时形成多晶硅。
将掩模移动图2B所示的确定距离，激光束照射在部分以前形成的多晶硅和单晶硅上，如图2C所示。通过不断地扫描多晶硅并且以此方式在多晶硅上照射激光束，在非晶硅的掩模图案和透射区彼此重叠的位置处，多晶硅熔化并且在固化时结晶。
激光脉冲照射的每部分多晶硅的结晶度不同，原因在于，激光发射能量密度的偏差，或者激光束如图3A所示地曾经照射过的非晶硅中的激光束的能量密度不均匀。
具体地，如图3B和图3C所示，激光扫描线在不同激光发射之间的上下边界引起条状缺陷。
这些条状缺陷引起显示器亮度的不均匀，特别是对于有机电致发光器件。
PCT国际专利申请No.WO97/45827和美国专利No.6322625公开了通过连续横向固化(SLS)方法将衬底上的非晶硅转变成多晶硅或者在衬底上仅使选择区结晶的技术。
此外，美国专利No.6177391中公开了仅对单晶硅获得TFT特性，由于当通过SLS结晶法使有源沟道方向平行于晶粒生长方向生长时，晶粒边界对载流子方向的阻挡效应被最小化。但是该专利还公开了，大量的晶粒边界起载流子的陷阱作用，并且当有源沟道方向垂直于晶粒生长方向时，TFT特性显著变差。
然而存在以下的情况：使用通常垂直于像素单元区TFT的TFT驱动电路制备有源矩阵显示器件，其中当有源沟道区方向相对于晶体生长方向倾斜30到60度时，显示器的亮度均匀性得到改善。
但是使用这种方法，在通过SLS结晶法形成晶粒之后，仍然存在由于激光能量密度的非均匀性造成的非均匀晶粒的问题。
此外，使用这种方法，不能在整个衬底上实现结晶，因此始终存在未结晶区域，尽管韩国特许公开的NO.2002-93194中介绍了以下方法，其中，形成三角形(“”)激光束图案并且通过沿着宽度方向移动三角形(“”)激光束图案进行结晶。
发明内容
因此，本发明提出一种制造多晶硅薄膜的方法和一种使用多晶硅薄膜制造的设备，其能够显著地避免现有技术的限制和缺点引起的一个或多个问题。
本发明提供一种改善由SLS结晶法制造的多晶硅薄膜均匀性的方法。
本发明提供一种使用由上述方法制造的多晶硅薄膜的设备。
本发明的其他特征在下文的描述中阐明，部分通过所述描述显然可知或者通过实践本发明习得。
本发明公开一种多晶硅薄膜制造方法，其中通过激光使非晶硅结晶，该方法包括：形成具有激光透射区和非激光透射区的掩模；以及基于平行于预定中心轴线的轴线将激光透射区移动一定距离。激光透射区相对激光扫描轴线不对称，并且激光透射区相对预定中心轴线对称。激光透射区和激光非透射区交错设置。预定的中心轴线是x和/或y。
本发明还公开了一种使用多晶硅薄膜的显示器，该多晶硅薄膜通过以下方法制备：形成具有激光透射区和激光非透射区的掩模，基于平行于预定的中心轴线的轴线将激光透射区移动一定距离。预定的中心轴线是x和/或y，激光透射区在激光扫描轴线上不对称，激光透射区在预定的中心轴线上对称，预定的中心轴线是x和/或y。激光透射区和激光非透射区交错设置。
本发明还公开了一种制造多晶硅薄膜用的掩模，其包括激光透射区和激光非透射区，激光透射区相对激光扫描方向轴线不对称，并且激光透射区相对预定的中心轴线对称。预定的中心轴线是x和/或y。
应该认识到，前述整体描述和下文的详细描述是示例和说明用的，目的在于提供对请求保护的发明做出进一步的解释。
附图说明
附图提供对发明的进一步理解并且组成说明书的一部分，其示出了本发明的实施例，并与下文的描述一起解释本发明的原理，附图中：
图1A、图1B、图1C示出了普通的顺序横向固化(SLS)结晶方法；
图2A、图2B、图2C示出了用普通的制造多晶硅薄膜掩模结构来结晶晶粒硅的方法；
图3A、图3B、图3C示出了图2A、图2B、图2C制造多晶硅薄膜的各个阶段；
图4A示出当激光在线形透射图案上照射一次的情形；
图4B示出通过移动掩模图案一确定距离而将激光在线形透射图案上照射两次的情形；
图5A示出当激光在两种不同长度线形透射图案上照射一次的情形；
图5B示出通过移动掩模图案一确定距离而将激光在不同长度线形透射图案上照射两次的情形；
图6A示出当激光在两种不同长度线形透射图案上照射一次、但是透射图案的长度小于第一实施例的透射图案的长度的情形；以及
图6B示出当通过移动掩模图案一确定距离而将激光在不同长度线形透射图案上照射两次的情形。
具体实施方式
下面详细描述本发明的实施例，该实施例的示例在附图中示出。
作为参考，类似参考符号在所有视图中表示对应部件。
图4A和图4B示出根据本发明第一个示例性实施例的掩模图案以及扫描过程。图4A示出激光在线形透射图案上照射一次的情形。图4B示出通过移动掩模图案一确定距离而将激光在线形透射图案上照射两次的情形。
根据图4A，透射图案组具有形成在上下掩模图案中的透射区，透射区相对于x轴互相不对称，该x轴是平行于扫描方向的方向轴，透射区相对于与x轴垂直的y、y’轴互相对称。
掩模图案基于平行于某一中心轴线的另一轴线移动一定距离，这样，在激光在前述掩模图形上照射一次之后，当掩模移动时，透射区和非透射区互换。
如图4B所示，在移动掩模以前的那部分透射区和在移动掩模以后的部分透射区重叠，其中部分透射区被移动形成在非透射区上，同时部分非透射区被移动形成在透射区上。
因此，在区域b上形成和区域a上相同的晶粒，原因在于，移动掩模后，通过在使用激光熔化区域b的晶粒之后结晶熔化的晶粒，使用与照射区域a的激光能量相同的能量使区域b二次结晶，但是，根据图3B所示的激光照射能量偏差，在激光在掩模图形上照射一次的情况下，晶粒在垂直方向上形成得不同。最后，产生如图4A所示的、透射区被移动d-I的效果，其中距离d-I是通过将距离d减去在透射区之间的非透射区的最小宽度I，其中d大于I。
掩模基于y”轴沿着扫描方向轴移动掩模宽度的1/4。
因此，以均匀形成晶粒的方式形成多晶硅薄膜。
虽然图4A示出线形透射区的形状，但是透射区不限于线形形状。
图5A和图5B示出据本发明的第二示例性实施例的平面图的掩模图案和扫描情况。图5A示出当激光在不同长度的三种线形透射图案上照射一次的情况，图5B示出通过将掩模图案移动一定距离而将激光在不同长度线形透射图案上照射两次的情况。
如图5A和图5B所示，根据本发明第二示例性实施例的掩模图案具有如下结构：包括第一线形透射区、第二线形透射区和第三线形透射区，其中第二线形透射区的长度比第一线形透射区的长度短，第三线形透射区的长度比第二线形透射区的长度短。
该掩模图案也可以是如下方式的，其中透射区基于x轴相互不对称，该x轴是平行于扫描线方向的轴线，并且透射区基于与x轴垂直的y、y’轴相互对称。
掩模图案在平行于某一中心轴线的另一轴线上移动一定距离，这样，在激光在前述掩模上照射一次后，移动掩模时，使透射区和非透射区互换。
即，如图5B所示，移动掩模前的部分透射区和移动掩模后的部分透射区重叠，其中部分透射区被移动而形成在非透射区上，同时部分非透射区被移动而形成在透射区上。
因此，在区域b上形成和区域a上相同的晶粒，原因在于，移动掩模后，通过在使用激光熔化区域b的晶粒之后结晶熔化的晶粒，使用与照射区域a的激光能量相同的能量使区域b二次结晶，但是，根据图3B所示的激光照射能量偏差，在激光在掩模图形上照射一次的情况下，晶粒在垂直方向上形成得不同。最后，产生如图5A所示的、透射区被移动d-I的效果。
图6A和图6B是示出根据本发明第三示例性实施例的掩模图案和扫描情况的平面图。图6A示出当激光在两种线形透射图案照射一次的情况，其中所述线形图案具有不同长度并且其长度比第一实施例中的短。图6B示出当通过移动掩模图案一定距离而将激光在不同长度线形透射图案上照射两次的情况。
掩模图案也可以是如下方式的，其中透射区基于x轴相互不对称，该x轴是平行于扫描线方向的轴线，透射区基于与x轴垂直的y、y’轴线相互对称。
掩模图案在平行于某一中心轴线的另一轴线上移动一定距离，这样，当激光在前述掩模上照射一次时，移动掩模，从而使透射区和非透射区互换。
即，如图6B所示，移动掩模前的部分透射区和移动掩模后的部分透射区重叠，其中部分透射区被移动而形成在非透射区上，同时部分非透射区被移动而形成在透射区上。
因此，在区域b上形成和区域a上相同的晶粒，原因在于，移动掩模后，通过在使用激光熔化区域b的晶粒之后结晶熔化的晶粒，使用与照射区域a的激光能量相同的能量使区域b二次结晶，但是，根据图3B所示的激光照射能量偏差，在激光在掩模图形上照射一次的情况下，晶粒在垂直方向上形成得不同。最后，产生如图5A所示的、透射区被移动d-I的效果。
如前所述，通过如本发明示例性实施例所述地设计掩膜图案，可以防止结晶过程中由于激光能量偏差而引起的多晶硅的不均匀结晶。
本发明所用的显示器优选是平板显示器，例如液晶显示器或有机电致发光器件。
如前所述，通过形成掩模图案来克服由于激光偏差而引起的多晶硅不均匀结晶，本发明能够解决显示器的亮度不均匀问题。
显然，在不脱离本发明精神和范围的前提下可以对本发明做出各种修改和变动。因此，本发明覆盖在权利要求书及其等价物的范围内的各种修改和变动。

Claims (18)

1、一种使用激光由非晶硅制造多晶硅的方法，包括：
设置具有激光透射区和非透射区的掩模图案的掩模；以及，
基于与预定中心轴线平行的轴线方向移动掩模，
其中，激光透射区基于激光扫描方向轴线不对称，并且激光透射区基于预定中心轴线方向对称；以及
激光透射区和激光非透射区是交替设置。
2、如权利要求1所述的方法，其特征在于，激光透射区是全等的线形区域。
3、如权利要求1所述的方法，其特征在于，激光透射区包括线形图案的第一激光透射区和线形图案的第二激光透射区，并且第二激光透射区比第一激光透射区短。
4、如权利要求3所述的方法，其特征在于，激光透射区还包括线形图案的第三激光透射区，第三激光透射区比第一激光透射区长。
5、如权利要求1所述的方法，其特征在于，平行于预定中心轴线的轴线位于掩模的中心，并且掩模基于与预定中心轴线平行的轴线移动掩模宽度的1/4。
6、如权利要求1所述的方法，其特征在于，预定中心轴线垂直于激光扫描方向轴。
7、如权利要求1所述的方法，其特征在于，平行于预定中心轴线的轴线垂直于激光扫描轴线方向，并且位于掩模中心。
8、如权利要求1所述的方法，其特征在于，激光透射区具有如下结构：当掩模基于与预定中心轴线平行的轴线移动一定距离时，激光透射区在垂直于激光扫描轴线的方向上部分重叠。
9、如权利要求8所述的方法，其特征在于，在垂直于激光扫描方向轴的方向上，激光透射区的重叠距离比激光透射区的宽度短。
10、如权利要求1所述的方法，其特征在于，激光透射区基于y轴不对称。
11、一种显示器，其使用通过以下工艺制造的多晶硅薄膜：
设置具有激光透射区和非透射区的掩模图案的掩模；和
基于与预定中心轴线平行的轴线移动掩模，
其中，激光透射区基于激光扫描方向轴线不对称，并且激光透射区基于预定中心轴线对称；以及
激光透射区和激光非透射区交替设置。
12、如权利要求11所述的显示器，其特征在于，显示器是有机电致发光器件或者液晶显示器。
13、一种用于制造多晶硅薄膜的掩模，包括：
激光透射区；和
以及激光非透射区，
其中，激光透射区基于激光扫描方向轴线不对称，激光透射区基于预定中心轴线对称，并且激光透射区和激光非透射区交替设置。
14、如权利要求13所述的掩模，其特征在于，激光透射区是全等的线形区域。
15、如权利要求13所述的掩模，其特征在于，激光透射区包括具有线形图案的第一激光透射区和具有线形图案的第二激光透射区，其中第一激光透射区比第二激光透射区长。
16、如权利要求15所述的掩模，其特征在于，激光透射区还包括具有线形图案的第三激光透射区，其中第三激光透射区比第一激光透射区长。
17、如权利要求13所述的掩模，其特征在于，激光透射区具有如下结构：当掩模基于平行于预定中心轴线的轴线移动一定距离时，激光透射区在垂直于激光扫描轴线方向上部分重叠。
18、如权利要求17所述的掩模，其特征在于，在垂直于激光扫描方向轴线的方向上，激光透射区的重叠距离比激光透射区的宽度短。
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