CN1593073B - 晶片保持体及制备半导体的系统 - Google Patents

晶片保持体及制备半导体的系统 Download PDF

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Publication number
CN1593073B
CN1593073B CN038015390A CN03801539A CN1593073B CN 1593073 B CN1593073 B CN 1593073B CN 038015390 A CN038015390 A CN 038015390A CN 03801539 A CN03801539 A CN 03801539A CN 1593073 B CN1593073 B CN 1593073B
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CN
China
Prior art keywords
good
guide member
wafer
mullite
reaction chamber
Prior art date
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Expired - Fee Related
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CN038015390A
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English (en)
Chinese (zh)
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CN1593073A (zh
Inventor
夏原益宏
仲田博彦
柊平启
桥仓学
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN1593073A publication Critical patent/CN1593073A/zh
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Publication of CN1593073B publication Critical patent/CN1593073B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10P72/7616—
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H10P72/0432—
    • H10P72/0602—
    • H10P72/50—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
CN038015390A 2002-09-18 2003-03-19 晶片保持体及制备半导体的系统 Expired - Fee Related CN1593073B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP270951/2002 2002-09-18
JP2002270951A JP3832409B2 (ja) 2002-09-18 2002-09-18 ウエハー保持体及び半導体製造装置
PCT/JP2003/003379 WO2004028208A1 (ja) 2002-09-18 2003-03-19 ウエハー保持体及び半導体製造装置

Publications (2)

Publication Number Publication Date
CN1593073A CN1593073A (zh) 2005-03-09
CN1593073B true CN1593073B (zh) 2011-07-20

Family

ID=32024867

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038015390A Expired - Fee Related CN1593073B (zh) 2002-09-18 2003-03-19 晶片保持体及制备半导体的系统

Country Status (7)

Country Link
US (2) US7268321B2 (OSRAM)
EP (1) EP1542506A4 (OSRAM)
JP (1) JP3832409B2 (OSRAM)
KR (1) KR100919734B1 (OSRAM)
CN (1) CN1593073B (OSRAM)
TW (1) TW200405444A (OSRAM)
WO (1) WO2004028208A1 (OSRAM)

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JP2007053280A (ja) * 2005-08-19 2007-03-01 Sumitomo Electric Ind Ltd 半導体加熱ヒータ用容器
TWI308908B (en) * 2005-12-27 2009-04-21 Ngk Insulators Ltd Aluminum nitride composite body, and manufacturing method of the same
US20080016684A1 (en) * 2006-07-06 2008-01-24 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US20080006204A1 (en) * 2006-07-06 2008-01-10 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US20080142755A1 (en) * 2006-12-13 2008-06-19 General Electric Company Heater apparatus and associated method
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US9624089B1 (en) * 2010-11-11 2017-04-18 Arctic Innovations, Llc Cold weather hydration systems, devices, components and methods
US20130189022A1 (en) * 2011-11-30 2013-07-25 Component Re-Engineering Company, Inc. Hermetically Joined Plate And Shaft Devices
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9088085B2 (en) * 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9728437B2 (en) * 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
JP6767826B2 (ja) * 2016-09-23 2020-10-14 日本特殊陶業株式会社 加熱装置
JP6767833B2 (ja) * 2016-09-29 2020-10-14 日本特殊陶業株式会社 加熱装置
JP6758143B2 (ja) * 2016-09-29 2020-09-23 日本特殊陶業株式会社 加熱装置
US10679873B2 (en) * 2016-09-30 2020-06-09 Ngk Spark Plug Co., Ltd. Ceramic heater
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
WO2020067128A1 (ja) * 2018-09-28 2020-04-02 京セラ株式会社 セラミック構造体及びウェハ用システム
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US12331984B2 (en) * 2021-05-10 2025-06-17 Applied Materials, Inc. Cryogenic micro-zone electrostatic chuck connector assembly

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110230043A (zh) * 2019-05-17 2019-09-13 苏州珂玛材料科技股份有限公司 化学气相淀积设备、陶瓷加热盘与陶瓷加热盘的制备方法

Also Published As

Publication number Publication date
JP2004111585A (ja) 2004-04-08
TW200405444A (en) 2004-04-01
US20070044718A1 (en) 2007-03-01
CN1593073A (zh) 2005-03-09
TWI308366B (OSRAM) 2009-04-01
JP3832409B2 (ja) 2006-10-11
KR20050042070A (ko) 2005-05-04
US7268321B2 (en) 2007-09-11
US7408131B2 (en) 2008-08-05
EP1542506A1 (en) 2005-06-15
US20050077284A1 (en) 2005-04-14
KR100919734B1 (ko) 2009-09-29
EP1542506A4 (en) 2008-06-11
WO2004028208A1 (ja) 2004-04-01

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Granted publication date: 20110720

Termination date: 20200319

CF01 Termination of patent right due to non-payment of annual fee