CN1574879A - 图像传感器 - Google Patents
图像传感器 Download PDFInfo
- Publication number
- CN1574879A CN1574879A CNA2004100714116A CN200410071411A CN1574879A CN 1574879 A CN1574879 A CN 1574879A CN A2004100714116 A CNA2004100714116 A CN A2004100714116A CN 200410071411 A CN200410071411 A CN 200410071411A CN 1574879 A CN1574879 A CN 1574879A
- Authority
- CN
- China
- Prior art keywords
- light receiving
- receiving element
- output
- array
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005070 sampling Methods 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000010354 integration Effects 0.000 claims description 6
- 238000012423 maintenance Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 16
- 101100443251 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG2 gene Proteins 0.000 description 11
- 101100041128 Schizosaccharomyces pombe (strain 972 / ATCC 24843) rst2 gene Proteins 0.000 description 11
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 description 8
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 description 8
- 230000007257 malfunction Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007600 charging Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011990 functional testing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Facsimile Heads (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP149267/03 | 2003-05-27 | ||
JP149267/2003 | 2003-05-27 | ||
JP2003149267A JP4071157B2 (ja) | 2003-05-27 | 2003-05-27 | イメージセンサー |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1574879A true CN1574879A (zh) | 2005-02-02 |
CN1574879B CN1574879B (zh) | 2010-06-09 |
Family
ID=33487146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100714116A Expired - Fee Related CN1574879B (zh) | 2003-05-27 | 2004-05-27 | 图像传感器 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20040245434A1 (zh) |
JP (1) | JP4071157B2 (zh) |
KR (1) | KR100886034B1 (zh) |
CN (1) | CN1574879B (zh) |
TW (1) | TWI344785B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101465939B (zh) * | 2007-12-21 | 2011-11-16 | 佳能株式会社 | 图像处理设备和图像处理方法 |
CN104079840A (zh) * | 2013-03-28 | 2014-10-01 | 恒景科技股份有限公司 | 影像传感器 |
CN104333719A (zh) * | 2014-11-12 | 2015-02-04 | 上海集成电路研发中心有限公司 | 全局快门像素单元及其信号采集方法和制造方法 |
CN104333718A (zh) * | 2014-11-12 | 2015-02-04 | 上海集成电路研发中心有限公司 | 10t全局快门像素单元及其信号采集方法和制造方法 |
CN107948552A (zh) * | 2017-12-28 | 2018-04-20 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN108802495A (zh) * | 2017-05-04 | 2018-11-13 | 亚德诺半导体集团 | 内部集成电路电阻校准 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002101261A (ja) * | 2000-09-26 | 2002-04-05 | Rohm Co Ltd | 画像読み取り装置 |
JP4202303B2 (ja) * | 2004-07-09 | 2008-12-24 | セイコーインスツル株式会社 | 光電変換装置及び信号読み出し回路とイメージセンサ |
KR100674957B1 (ko) * | 2005-02-23 | 2007-01-26 | 삼성전자주식회사 | 임의의 서브-샘플링 레이트로 아날로그 신호를 평균화하여서브-샘플링하는 고체 촬상 소자 및 그 구동 방법 |
JP5252817B2 (ja) * | 2006-03-29 | 2013-07-31 | キヤノン株式会社 | 撮像装置、放射線撮像装置、撮像装置の駆動方法、放射線撮像システムおよび撮像装置の製造方法 |
US20080054320A1 (en) * | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Method, apparatus and system providing suppression of noise in a digital imager |
JP4943942B2 (ja) * | 2007-05-18 | 2012-05-30 | 株式会社Pfu | イメージセンサ、イメージセンサユニットおよび画像読取装置 |
FR2943178B1 (fr) * | 2009-03-13 | 2011-08-26 | New Imaging Technologies Sas | Capteur matriciel a faible consommation |
CN103997611B (zh) * | 2014-03-05 | 2017-02-22 | 浙江悍马光电设备有限公司 | 一种基于噪声模板的图像固定模式噪声的抑制方法 |
WO2020062076A1 (zh) * | 2018-09-28 | 2020-04-02 | 华为技术有限公司 | 初始化同步装置、初始化同步方法及摄像机 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262871A (en) * | 1989-11-13 | 1993-11-16 | Rutgers, The State University | Multiple resolution image sensor |
US5949483A (en) * | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
AU2154099A (en) * | 1997-12-18 | 1999-07-12 | Simage Oy | Device for imaging radiation |
US6633029B2 (en) * | 1998-03-16 | 2003-10-14 | Silicon Video, Inc. | Video bus for high speed multi-resolution imagers and method thereof |
US6133862A (en) * | 1998-07-31 | 2000-10-17 | Intel Corporation | Method and apparatus to reduce row reset noise in photodiode |
JP3571934B2 (ja) * | 1998-10-23 | 2004-09-29 | セイコーインスツルメンツ株式会社 | イメージセンサー |
US6249618B1 (en) * | 1998-12-18 | 2001-06-19 | Syscan, Inc. | Circuit architecture and method for switching sensor resolution |
US6759641B1 (en) * | 2000-09-27 | 2004-07-06 | Rockwell Scientific Licensing, Llc | Imager with adjustable resolution |
WO2002043366A2 (en) * | 2000-11-27 | 2002-05-30 | Vision Sciences Inc. | Programmable resolution cmos image sensor |
US6914227B2 (en) * | 2001-06-25 | 2005-07-05 | Canon Kabushiki Kaisha | Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system |
US6794627B2 (en) * | 2001-10-24 | 2004-09-21 | Foveon, Inc. | Aggregation of active pixel sensor signals |
JP3944829B2 (ja) * | 2002-01-17 | 2007-07-18 | ソニー株式会社 | 固体撮像装置およびその駆動方法 |
-
2003
- 2003-05-27 JP JP2003149267A patent/JP4071157B2/ja not_active Expired - Fee Related
-
2004
- 2004-05-26 TW TW093114999A patent/TWI344785B/zh not_active IP Right Cessation
- 2004-05-27 CN CN2004100714116A patent/CN1574879B/zh not_active Expired - Fee Related
- 2004-05-27 KR KR1020040037890A patent/KR100886034B1/ko active IP Right Grant
- 2004-05-27 US US10/854,871 patent/US20040245434A1/en not_active Abandoned
-
2006
- 2006-02-03 US US11/346,828 patent/US7501609B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101465939B (zh) * | 2007-12-21 | 2011-11-16 | 佳能株式会社 | 图像处理设备和图像处理方法 |
CN104079840A (zh) * | 2013-03-28 | 2014-10-01 | 恒景科技股份有限公司 | 影像传感器 |
CN104079840B (zh) * | 2013-03-28 | 2017-05-17 | 恒景科技股份有限公司 | 影像传感器 |
CN104333719A (zh) * | 2014-11-12 | 2015-02-04 | 上海集成电路研发中心有限公司 | 全局快门像素单元及其信号采集方法和制造方法 |
CN104333718A (zh) * | 2014-11-12 | 2015-02-04 | 上海集成电路研发中心有限公司 | 10t全局快门像素单元及其信号采集方法和制造方法 |
CN104333719B (zh) * | 2014-11-12 | 2018-04-06 | 上海集成电路研发中心有限公司 | 全局快门像素单元及其信号采集方法和制造方法 |
CN108802495A (zh) * | 2017-05-04 | 2018-11-13 | 亚德诺半导体集团 | 内部集成电路电阻校准 |
CN108802495B (zh) * | 2017-05-04 | 2020-11-20 | 亚德诺半导体集团 | 内部集成电路电阻校准 |
CN107948552A (zh) * | 2017-12-28 | 2018-04-20 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
CN107948552B (zh) * | 2017-12-28 | 2020-03-31 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20040102347A (ko) | 2004-12-04 |
US7501609B2 (en) | 2009-03-10 |
JP4071157B2 (ja) | 2008-04-02 |
TWI344785B (en) | 2011-07-01 |
KR100886034B1 (ko) | 2009-02-26 |
US20060192079A1 (en) | 2006-08-31 |
TW200509674A (en) | 2005-03-01 |
CN1574879B (zh) | 2010-06-09 |
JP2004356724A (ja) | 2004-12-16 |
US20040245434A1 (en) | 2004-12-09 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160310 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100609 Termination date: 20200527 |