CN1561576A - 具有能量恢复电路的栅极驱动器装置 - Google Patents

具有能量恢复电路的栅极驱动器装置 Download PDF

Info

Publication number
CN1561576A
CN1561576A CNA028193199A CN02819319A CN1561576A CN 1561576 A CN1561576 A CN 1561576A CN A028193199 A CNA028193199 A CN A028193199A CN 02819319 A CN02819319 A CN 02819319A CN 1561576 A CN1561576 A CN 1561576A
Authority
CN
China
Prior art keywords
energy
loop
inductance
grid capacitance
gate drivers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA028193199A
Other languages
English (en)
Other versions
CN1561576B (zh
Inventor
F·李
J·钱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Italian Ericsson Ltd i L
TDK Electronics AG
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN1561576A publication Critical patent/CN1561576A/zh
Application granted granted Critical
Publication of CN1561576B publication Critical patent/CN1561576B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04163Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

本发明提供了一种新颖的栅极驱动器装置,其中能量恢复电路与方波栅极驱动器相结合。能量恢复电路包括第一回路,用于当栅极驱动器关断时将能量从栅极电容释放到电感,以及第二回路,用于将能量从电感释放到电源。固此,当栅极驱动器关断时,栅极电容的能量被转移至电源,且栅极驱动器装置仍然保持与方波驱动器相同的工作灵活性,并独立于开关频率。

Description

具有能量恢复电路的栅极驱动器装置
本发明涉及用于功率MOSFET的栅极驱动器,更具体地涉及这样一种栅极驱动器装置,其中的能量恢复电路与方波栅极驱动器相结合,以便恢复在栅极驱动器中的关断损耗。
目前,用于功率MOSFET的栅极驱动器可以分为三个主要类别,即,方波、准谐振和谐振驱动器。如图1所示的方波栅极驱动器通常在由相同的控制信号驱动的一对图腾柱(totem pole)N和P沟道开关组成的IC中实现。方波驱动器的优势在于:易于实现,并且不依赖于开关频率。然而,没有方法可以用于恢复由MOSFET栅极电容的充放电所产生的导通和关断能量损耗,而这些能量损耗对于高频工作是无法容忍的。
如图2所示的准谐振驱动器可以消除栅极驱动器中的导通损耗,如图3所示的谐振驱动器可以通过每个开关周期期间、在谐振电感Lg和有效栅极电容Cg之间循环能量来消除导通和关断损耗。然而,不同于可以工作在“脉宽调制(PWM)”模式以及“可变频率控制”模式下的方波驱动器,准谐振和谐振驱动器由于其依赖于开关频率和占空比,因此只能在“可变频率控制”模式下的变窄的频率范围内正常工作。因此,准谐振和谐振驱动器中电路的工作频率严格受到限制。
因此,存在对于这样的栅极驱动器的需要,一方面,这种栅极驱动器是不依赖于开关频率的,另一方面,它能够从MOSFET的栅极电容中恢复一些能量。
本发明提供一种新颖的栅极驱动器装置,其中能量恢复电路与方波栅极驱动器结合。能量恢复电路能够在栅极驱动器的关断工作期间,通过将栅极电容中存储的能量转移至电源从而恢复关断损耗。具体地,能量恢复电路包括第一回路,用于当栅极驱动器关断时将能量从栅极电容释放到电感,以及第二回路,用于将能量从电感释放到电源。通过导通优选为FET的第一器件形成第一回路,通过利用优选为二极管的单向性器件形成第二回路。因此,当栅极驱动器关断时,栅极电容的能量被转移至电源,且栅极驱动器装置仍然保持与独立于开关频率的方波驱动器相同的工作灵活性。
参考附图,在阅读现有技术电路的描述和本发明的优选实施例的基础上,本发明的上述和其他特征以及优点将变得更加清楚,其中:
图1示出了传统的方波栅极驱动器电路;
图2示出了准谐振栅极驱动器电路;
图3示出了谐振栅极驱动器电路;
图4示出了本发明的栅极驱动器装置的电路;以及
图5示出了图4中的栅极驱动器装置的时序图。
如图4所示,根据本发明的新颖的栅极驱动器装置,能量恢复电路(如虚线框10中所述)与方波栅极驱动器电路相结合,以恢复栅极驱动器中的关断损耗。具体地,能量恢复电路包括电感L和单向性传导器件D,以及开关Q3。这里在本实施例中,Q3是FET而D是二极管。
如图4所示,电感L连接在FET Q3和二极管D的结合点与栅极电容Cg之间。在栅极驱动器的关断工作期间,当导通FET Q3和二极管D时,将会形成两个回路,用于在两个连续步骤中将能量栅极电容Cg恢复到电源Vc,这将在下面详细讨论。
为了导通主FET S,方波栅极驱动器电路中的FET Q1被导通,并将栅极电容Cg充电至Vc,以便上拉(pull up)S的栅极,正如图1所示的传统方波栅极驱动器中相同的方式。
然而,为了关断主FET S,本发明的栅极驱动器装置工作在不同于图1所示的传统方波栅极驱动器的方式中。具体地,在Q1关断之后,方波栅极驱动器电路的FET Q2并不立即导通而以相同于传统方波栅极驱动器中的方式将栅极钳位至地。取而代之的是,在Q1的关断和Q2的导通之间增加了滞后时间td,用于使能量恢复电路工作以便将关断栅极能量恢复回到电源Vc,其细节如图5中的时序图所示。
具体地,如图5所示,当在时间t0处关断Q1时,Q3导通。在Cg、L、Q3之间形成第一回路,该第一回路以谐振方式将能量从栅极电容Cg释放或转移至谐振电感L。Q3保持导通一段时期TonQ3直到t1
通过电感L和栅极电容Cg的设计来固定Q3的导通时间,Q3的导通时间由下列方程给出:
T on Q 3 = π 2 L · C g
总滞后时间td应当稍长于TonQ3,优选具有10-20%的余量。
在时刻t1,当Q3关断时,存储在谐振电感L中的能量通过二极管D和FET Q2的体二极管BD2返回至电源。因此,存储在栅极电容Cg中的能量被完全恢复。
在时刻t2,Q2在零电压下导通,S的栅极被钳位在地,以完成释放栅极电容Cg中的任何剩余能量。
如图5所示,栅极电压Vg的波形类似于方波,除了在下降沿期间其波形由能量恢复电路更改为正弦波形。
可以理解,滞后时间td不是电源级的开关频率和占空比的函数。因此,本发明的栅极驱动器装置可以容易地以恢复关断栅极能量的附加优势来取代任何的传统方波驱动。
上文具体描述了优选实施例。可以理解,不背离本发明的精神,各种变化和修改对于本领域技术人员来说都是显而易见的。因此,本发明的范围仅由附属权利要求所限定。

Claims (31)

1.一种栅极驱动器装置,用于驱动功率MOSFET,包括:
控制信号源(Vc),用于提供控制驱动功率;
方波栅极驱动器电路(Q1、Q2),用于对栅极电容(Cg)充电,以便导通所述MOSFET;
能量恢复电路(D、Q3、L),用于在所述栅极驱动器的关断工作期间使所述栅极电容向所述电源放电。
2.权利要求1所述的栅极驱动器装置,其中所述能量恢复电路包括与所述栅极电容相连的谐振电感(L)。
3.权利要求2所述的栅极驱动器装置,进一步包括与所述电感(L)和所述栅极电容(Cg)相连的第一传导(Q3)器件,用于形成一个回路,以便在所述关断工作期间将能量从所述栅极电容释放到所述电感。
4.权利要求3所述的栅极驱动器,其中所述第一传导器件是FET。
5.权利要求2-4任一所述的栅极驱动器装置,进一步包括与所述电感(L)和所述电源(Vc)相连的第二传导器件(D),用于将能量从所述电感释放到所述电源。
6.权利要求5所述的栅极驱动器,其中所述第二传导器件是二极管(D)。
7.前述任一权利要求所述的栅极驱动器装置,其中所述栅极驱动器电路包括第三传导器件(Q1),用于一个回路,所述电源通过该回路对所述栅极电容进行充电。
8.权利要求7所述的栅极驱动器装置,其中所述第三传导器件是FET(Q1)。
9.前述任一权利要求所述的栅极驱动器装置,其中所述栅极驱动器电路包括第四传导器件(Q2),或形成一个回路,所述栅极电容能够通过该回路完全放电。
10.权利要求9所述的栅极驱动器装置,其中所述第四传导器件是FET(Q2)。
11.一种用于在用于驱动功率MOSFET的方波栅极驱动器的关断操作中恢复能量的方法,包括:
提供能量恢复电路,用于在所述栅极驱动器的所述关断工作期间,使栅极电容向所述栅极驱动器的电源放电;
当所述栅极驱动器关断时,通过所述能量恢复电路将所述栅极电容器放电。
12.权利要求11的方法,其中所述放电包括步骤:在所述栅极驱动器关断之后,形成第一回路以便将能量从所述栅极电容释放到谐振电感。
13.权利要求12的方法,其中所述第一回路包括彼此串联的所述栅极电容、所述电感和第一传导器件。
14.权利要求13的方法,其中所述形成所述第一回路的步骤是通过导通所述第一传导器件来实现的。
15.权利要求14的方法,其中所述放电进一步包括步骤:保持所述第一传导器件导通一段预定时间。
16.权利要求15的方法,其中所述时间期间为 π 2 L · C g , 其中L是所述谐振电感的电感值,(Cg)是所述栅极电容的电容值。
17.权利要求12-16任一的方法,其中所述放电进一步包括步骤:形成第二回路,以便将能量从所述电感释放到所述电源。
18.权利要求17的方法,其中所述第二回路包括彼此串联的所述电感、第二传导器件和所述电源。
19.权利要求17或18的方法,进一步包括步骤:形成第三回路,以便完全释放所述栅极电容中的剩余能量。
20.当从属于权利要求18时的权利要求19的方法,其中形成所述第三回路的所述步骤是在所述第二导通器件关断一段滞后时间td之后执行的。
21.一种栅极驱动器装置,用于对功率MOSFET充电和放电,包括:
电源,用于提供控制驱动功率(Vc);
方波栅极驱动器电路,包括:
第一导通器件(Q1),用于当所述栅极驱动器导通时,形成用于所述控制信号源到所述栅极电容的回路;
第二导通器件(Q2),用于当所述栅极驱动器关断时,形成用于将能量从所述栅极电容释放到地的回路;
关断能量恢复电路,包括:
电感(L),用于存储从所述栅极电容Cg中释放的能量;
第三导通器件(Q3),用于形成回路以将所述栅极电容的能量释放到所述电感;
第四导通器件(D),用于形成回路以将能量从所述电感释放到所述电源;
由此,当所述栅极驱动器装置关断时,通过所述恢复电路来恢复栅极电容中的能量。
22.权利要求21的栅极驱动器,其中所述第一导通器件(Q1)是FET。
23.权利要求21或22的栅极驱动器,其中所述第二导通器件(Q2)是FET。
24.权利要求21-23任一的栅极驱动器,其中所述第三导通器件(Q3)是FET。
25.权利要求21-24任一的栅极驱动器,其中所述第四导通器件是二极管(D)。
26.一种用于恢复方波栅极驱动器中的关断损耗的能量恢复电路,用于对功率MOSFET的栅极电容进行放电,包括:
第一回路,用于在所述栅极驱动器的关断工作期间,将能量从所述栅极电容释放到电感(L);和
第二回路,用于将能量从所述电感释放到所述栅极驱动器的电源。
27.权利要求26的能量恢复电路,其中所述第一回路包括与所述电感(L)和所述栅极电容(Cg)串联的第一传导器件(Q1)。
28.权利要求27的能量恢复电路,其中当所述栅极驱动器关断时所述第一传导器件(Q1)导通,以便形成所述第一回路从而开始从所述栅极电容到所述电感的放电。
29.权利要求27或28的能量恢复电路,其中所述第一导通器件(Q1)是FET。
30.权利要求26-29任一的能量恢复电路,其中所述第二回路包括与所述电感(L)和所述电源串联的第二传导器件。
31.权利要求30的能量恢复电路,其中所述第二导通器件是二极管(D)。
CN028193199A 2001-10-01 2002-09-11 具有能量恢复电路的栅极驱动器装置 Expired - Lifetime CN1561576B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/968,093 US6650169B2 (en) 2001-10-01 2001-10-01 Gate driver apparatus having an energy recovering circuit
US09/968,093 2001-10-01
PCT/IB2002/003747 WO2003030359A2 (en) 2001-10-01 2002-09-11 Gate driver apparatus having an energy recovering circuit

Publications (2)

Publication Number Publication Date
CN1561576A true CN1561576A (zh) 2005-01-05
CN1561576B CN1561576B (zh) 2013-03-27

Family

ID=25513722

Family Applications (1)

Application Number Title Priority Date Filing Date
CN028193199A Expired - Lifetime CN1561576B (zh) 2001-10-01 2002-09-11 具有能量恢复电路的栅极驱动器装置

Country Status (6)

Country Link
US (1) US6650169B2 (zh)
EP (1) EP1446876A2 (zh)
JP (1) JP4581070B2 (zh)
KR (1) KR100977912B1 (zh)
CN (1) CN1561576B (zh)
WO (1) WO2003030359A2 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101351963B (zh) * 2005-11-25 2012-06-27 欧司朗股份有限公司 具有连接到高电势的降压晶体管的电路装置
CN101816128B (zh) * 2007-10-05 2015-09-02 爱立信电话股份有限公司 用于动力开关元件的驱动电路
CN105245091A (zh) * 2015-10-27 2016-01-13 东南大学 一种功率变换器中功率mos管的栅极驱动电路
WO2016019889A1 (zh) * 2014-08-07 2016-02-11 王玮冰 数字发送器、数字收发器及其控制方法
CN106357096A (zh) * 2015-07-14 2017-01-25 英飞凌科技奥地利有限公司 操作开关晶体管的系统和方法
CN106877635A (zh) * 2017-03-07 2017-06-20 浙江大学 隔离型高频低损驱动电路
CN107787556A (zh) * 2015-06-30 2018-03-09 弗罗纽斯国际有限公司 用于控制晶体管的电路装置
CN111313660A (zh) * 2019-11-21 2020-06-19 华中科技大学 一种混合式谐振驱动电路及其控制方法

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19953884A1 (de) * 1999-11-09 2001-05-23 Infineon Technologies Ag Schaltungsanordnung zur Erzeugung von Signalformen
US7116728B2 (en) * 2001-05-25 2006-10-03 Matsushita Electric Industrial Co., Ltd. Quadrature alignment in communications receivers using dual delay lines
JP4043321B2 (ja) * 2002-08-29 2008-02-06 松下電器産業株式会社 スイッチング電源装置
GB0310844D0 (en) * 2003-05-12 2003-06-18 Adiabatic Logic Ltd Improvements to resonant line drivers
EP1654804B1 (en) * 2003-08-01 2007-01-17 Philips Intellectual Property & Standards GmbH High frequency control of a semiconductor switch
JP4763606B2 (ja) * 2003-09-08 2011-08-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体スイッチの高周波制御
US8253195B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253197B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8212317B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7330017B2 (en) 2004-01-29 2008-02-12 Enpirion, Inc. Driver for a power converter and a method of driving a switch thereof
US8212315B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 (en) 2004-01-29 2007-06-12 Enpirion, Inc. Laterally diffused metal oxide semiconductor device and method of forming the same
US8212316B2 (en) 2004-01-29 2012-07-03 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US8253196B2 (en) 2004-01-29 2012-08-28 Enpirion, Inc. Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
US7214985B2 (en) * 2004-08-23 2007-05-08 Enpirion, Inc. Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7612602B2 (en) * 2005-01-31 2009-11-03 Queen's University At Kingston Resonant gate drive circuits
US7598792B2 (en) * 2005-01-31 2009-10-06 Queen's University At Kingston Resonant gate drive circuits
JP4496988B2 (ja) * 2005-02-21 2010-07-07 株式会社デンソー ゲート駆動回路
US7453292B2 (en) * 2005-11-04 2008-11-18 Queen's University At Kingston Resonant gate drive circuit with centre-tapped transformer
US7521907B2 (en) * 2006-03-06 2009-04-21 Enpirion, Inc. Controller for a power converter and method of operating the same
US7285876B1 (en) * 2006-05-01 2007-10-23 Raytheon Company Regenerative gate drive circuit for power MOSFET
CN101079576B (zh) * 2006-05-24 2010-04-07 昂宝电子(上海)有限公司 用于提供对电源调节器的开关的系统
US7893676B2 (en) * 2006-07-20 2011-02-22 Enpirion, Inc. Driver for switch and a method of driving the same
US7948280B2 (en) * 2006-10-20 2011-05-24 Enpirion, Inc. Controller including a sawtooth generator and method of operating the same
JP5196818B2 (ja) * 2007-03-14 2013-05-15 株式会社東芝 半導体スイッチング素子のドライブ回路及びx線高電圧装置
EP2171835B1 (en) * 2007-07-09 2014-07-23 Power Concepts NZ Limited Drive circuit
US7876080B2 (en) * 2007-12-27 2011-01-25 Enpirion, Inc. Power converter with monotonic turn-on for pre-charged output capacitor
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US8686698B2 (en) 2008-04-16 2014-04-01 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8692532B2 (en) 2008-04-16 2014-04-08 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US7679342B2 (en) 2008-04-16 2010-03-16 Enpirion, Inc. Power converter with power switch operable in controlled current mode
US8410769B2 (en) 2008-04-16 2013-04-02 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8541991B2 (en) 2008-04-16 2013-09-24 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US9246390B2 (en) 2008-04-16 2016-01-26 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US8698463B2 (en) 2008-12-29 2014-04-15 Enpirion, Inc. Power converter with a dynamically configurable controller based on a power conversion mode
US9548714B2 (en) 2008-12-29 2017-01-17 Altera Corporation Power converter with a dynamically configurable controller and output filter
WO2010091697A1 (de) * 2009-02-13 2010-08-19 Hüttinger Elektronik Gmbh + Co. Kg Verfahren zur leistungsversorgung eines plasmaprozesses und plasmaversorgungseinrichtung
US8138529B2 (en) 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
US8624662B2 (en) * 2010-02-05 2014-01-07 Transphorm Inc. Semiconductor electronic components and circuits
US8867295B2 (en) 2010-12-17 2014-10-21 Enpirion, Inc. Power converter for a memory module
US8456201B2 (en) * 2011-07-06 2013-06-04 Eaton Corporation Energy-recycling resonant drive circuits for semiconductor devices
CN102332755A (zh) * 2011-07-22 2012-01-25 杭州硅星科技有限公司 低压驱动电容负载的能量回收电路及其驱动方法
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
US8847631B2 (en) * 2011-12-23 2014-09-30 General Electric Company High speed low loss gate drive circuit
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
US20140159130A1 (en) 2012-11-30 2014-06-12 Enpirion, Inc. Apparatus including a semiconductor device coupled to a decoupling device
US9059076B2 (en) 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
US9537425B2 (en) 2013-07-09 2017-01-03 Transphorm Inc. Multilevel inverters and their components
US9536938B1 (en) 2013-11-27 2017-01-03 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US9673192B1 (en) 2013-11-27 2017-06-06 Altera Corporation Semiconductor device including a resistor metallic layer and method of forming the same
US10020739B2 (en) 2014-03-27 2018-07-10 Altera Corporation Integrated current replicator and method of operating the same
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
KR101519850B1 (ko) * 2014-07-09 2015-05-14 중앙대학교 산학협력단 Mosfet의 공진형 게이트 드라이버 장치
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
CN107251433B (zh) * 2015-02-16 2020-10-30 三菱电机株式会社 半导体器件驱动电路
US10103627B2 (en) 2015-02-26 2018-10-16 Altera Corporation Packaged integrated circuit including a switch-mode regulator and method of forming the same
WO2016149146A1 (en) 2015-03-13 2016-09-22 Transphorm, Inc. Paralleling of switching devices for high power circuits
US9509217B2 (en) 2015-04-20 2016-11-29 Altera Corporation Asymmetric power flow controller for a power converter and method of operating the same
KR101731608B1 (ko) 2015-10-02 2017-04-28 (주) 성산기업 현미 및 왕겨 선별장치
CN108432105B (zh) * 2015-12-22 2020-04-14 三菱电机株式会社 栅极驱动电路以及具备该栅极驱动电路的电力变换装置
JP6653285B2 (ja) * 2017-03-21 2020-02-26 矢崎総業株式会社 スイッチング制御装置
US10500959B2 (en) * 2017-03-29 2019-12-10 Ford Global Technologies, Llc Single supply hybrid drive resonant gate driver
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
US10250249B1 (en) 2017-06-30 2019-04-02 Bel Power Solutions Inc. Recuperative gate drive circuit and method
US10355688B2 (en) * 2017-12-06 2019-07-16 Silanna Asia Pte Ltd Controlled current manipulation for regenerative charging of gate capacitance
CN115133752A (zh) * 2021-03-25 2022-09-30 台达电子企业管理(上海)有限公司 驱动装置及其控制方法
CN115313803A (zh) * 2022-08-22 2022-11-08 天津大学 一种谐振无损驱动电路结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204561A (en) * 1989-07-17 1993-04-20 Sgs-Thomson Microelectronics S.A. Gate control circuit for mos transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010261A (en) * 1989-12-08 1991-04-23 General Electric Company Lossless gate driver circuit for a high frequency converter
US5264736A (en) * 1992-04-28 1993-11-23 Raytheon Company High frequency resonant gate drive for a power MOSFET
US6208535B1 (en) * 1994-10-31 2001-03-27 Texas Instruments Incorporated Resonant gate driver
DE19524529A1 (de) * 1995-07-05 1997-01-09 Siemens Ag Leistungsarme Treiberstufe
JP3271525B2 (ja) 1996-07-29 2002-04-02 株式会社村田製作所 共振ドライブ回路
JPH10136638A (ja) 1996-10-31 1998-05-22 Fuji Electric Co Ltd ゲート駆動回路
JPH10337000A (ja) 1997-06-02 1998-12-18 Fuji Electric Co Ltd ゲート駆動回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204561A (en) * 1989-07-17 1993-04-20 Sgs-Thomson Microelectronics S.A. Gate control circuit for mos transistor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101351963B (zh) * 2005-11-25 2012-06-27 欧司朗股份有限公司 具有连接到高电势的降压晶体管的电路装置
CN101816128B (zh) * 2007-10-05 2015-09-02 爱立信电话股份有限公司 用于动力开关元件的驱动电路
WO2016019889A1 (zh) * 2014-08-07 2016-02-11 王玮冰 数字发送器、数字收发器及其控制方法
CN107787556A (zh) * 2015-06-30 2018-03-09 弗罗纽斯国际有限公司 用于控制晶体管的电路装置
CN107787556B (zh) * 2015-06-30 2020-10-23 弗罗纽斯国际有限公司 用于控制晶体管的电路装置
CN106357096A (zh) * 2015-07-14 2017-01-25 英飞凌科技奥地利有限公司 操作开关晶体管的系统和方法
CN106357096B (zh) * 2015-07-14 2019-07-19 英飞凌科技奥地利有限公司 操作开关晶体管的系统和方法
CN105245091A (zh) * 2015-10-27 2016-01-13 东南大学 一种功率变换器中功率mos管的栅极驱动电路
CN105245091B (zh) * 2015-10-27 2018-04-06 东南大学 一种功率变换器中功率mos管的栅极驱动电路
CN106877635A (zh) * 2017-03-07 2017-06-20 浙江大学 隔离型高频低损驱动电路
CN106877635B (zh) * 2017-03-07 2019-05-24 浙江大学 隔离型高频低损驱动电路
CN111313660A (zh) * 2019-11-21 2020-06-19 华中科技大学 一种混合式谐振驱动电路及其控制方法
CN111313660B (zh) * 2019-11-21 2021-04-20 华中科技大学 一种混合式谐振驱动电路及其控制方法

Also Published As

Publication number Publication date
WO2003030359A3 (en) 2004-06-10
WO2003030359A2 (en) 2003-04-10
KR100977912B1 (ko) 2010-08-24
CN1561576B (zh) 2013-03-27
JP2005505226A (ja) 2005-02-17
US20030062930A1 (en) 2003-04-03
US6650169B2 (en) 2003-11-18
EP1446876A2 (en) 2004-08-18
KR20040045459A (ko) 2004-06-01
JP4581070B2 (ja) 2010-11-17

Similar Documents

Publication Publication Date Title
CN1561576A (zh) 具有能量恢复电路的栅极驱动器装置
CN1849748B (zh) 半导体开关的高频控制
EP0699015B1 (en) Power circuit with energy recovery for driving an electroluminescent device
CN102223747B (zh) 一种pwm调光led驱动器及其驱动方法
CN1068998C (zh) 半桥驱动器电路
EP0788298A1 (en) Reduced bus-voltage integrated-boost high power-factor circuit for powering gas discharge lamps
KR0166432B1 (ko) 전계발광 소자용 전계발광 소자 점등 장치 및 방법
CN1182649C (zh) 低输出电压dc-dc变换器的自驱动同步整流电路
CN1234958A (zh) 脉冲电压序列产生方法及其电路装置
CN1397149A (zh) 用于lcd背光的带耦合电感的反向电路
CN104901536A (zh) 双向dc-dc升降压系统及储能系统
CN1157100C (zh) 谐振转换器电路
CN1133263C (zh) 升压及降压变换软开关拓扑电路
US5568016A (en) Power supply for an electroluminescent panel or the like
CN1711688A (zh) 具有逻辑电平控制的集成式浮动电力传输设备和方法
CN100446394C (zh) 具有功率因数校正器的交直流变换器
US5418434A (en) Voltage-boosting circuit for an electroluminescent lamp driver
CN101658067A (zh) 用于点燃和驱动放电灯的电路装置
CN1398504A (zh) 电压馈电推挽式逻辑链路控制谐振液晶显示器背光逆变器电路
CN100375581C (zh) 高效高功率因数电镇流器
CN113872437B (zh) 一种脉冲负载电源及其电压滞环控制方法
EP1661109A1 (en) Charge recovery for enhanced transistor drive
US7564431B2 (en) Method for reducing power consumption of plasma display panel
JP4167835B2 (ja) 電界発光ランプパネルのスイッチ方式エネルギー回収
CN1760957A (zh) 利用电容性负载的软切换来产生矩形电压信号的放大器

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20070914

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20070914

Address after: Holland Ian Deho Finn

Applicant after: NXP B.V.

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

ASS Succession or assignment of patent right

Owner name: NXP BV

Free format text: FORMER OWNER: KONINKL PHILIPS ELECTRONICS NV

Effective date: 20110120

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: EINDHOVEN, HOLLAND TO: PLAN-LES-OUATES, SWITZERLAND

TA01 Transfer of patent application right

Effective date of registration: 20110120

Address after: Swiss Prang Eli Ute

Applicant after: ST Wireless

Address before: Holland Ian Deho Finn

Applicant before: NXP B.V.

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SNAPTRACK, INC.

Free format text: FORMER OWNER: ST-ERICSSON S. A.

Effective date: 20150807

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee

Owner name: ST-ERICSSON S. A.

Free format text: FORMER NAME: ST-ERICSSON INC.

CP03 Change of name, title or address

Address after: Geneva, Switzerland

Patentee after: Italian Ericsson Ltd. in liquidation

Address before: Swiss Prang Eli Ute

Patentee before: St-Ericsson S.A.

TR01 Transfer of patent right

Effective date of registration: 20150807

Address after: American California

Patentee after: EPCOS AG

Address before: Geneva, Switzerland

Patentee before: Italian Ericsson Ltd. in liquidation

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130327