CN1540768A - 一种源漏下陷型超薄体soimos晶体管及其集成电路的制作方法 - Google Patents
一种源漏下陷型超薄体soimos晶体管及其集成电路的制作方法 Download PDFInfo
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- CN1540768A CN1540768A CNA2003101034242A CN200310103424A CN1540768A CN 1540768 A CN1540768 A CN 1540768A CN A2003101034242 A CNA2003101034242 A CN A2003101034242A CN 200310103424 A CN200310103424 A CN 200310103424A CN 1540768 A CN1540768 A CN 1540768A
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Application Number | Priority Date | Filing Date | Title |
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CNB2003101034242A CN1328795C (zh) | 2003-10-31 | 2003-10-31 | 一种源漏下陷型超薄体soimos晶体管及其制作方法 |
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CNB2003101034242A CN1328795C (zh) | 2003-10-31 | 2003-10-31 | 一种源漏下陷型超薄体soimos晶体管及其制作方法 |
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CN1540768A true CN1540768A (zh) | 2004-10-27 |
CN1328795C CN1328795C (zh) | 2007-07-25 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314089C (zh) * | 2004-12-21 | 2007-05-02 | 北京大学 | 场效应晶体管的制备方法 |
CN100452354C (zh) * | 2005-08-25 | 2009-01-14 | 中芯国际集成电路制造(上海)有限公司 | 多层膜作为硬掩模和抗反射层的应变源漏cmos的制作方法 |
CN100463143C (zh) * | 2005-07-07 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | 具有氧化物间隔层的应变源漏cmos的集成方法 |
CN103094177A (zh) * | 2011-11-08 | 2013-05-08 | 中芯国际集成电路制造(上海)有限公司 | 一种soi和基于soi的mos器件及其制作方法 |
CN104051276A (zh) * | 2006-09-28 | 2014-09-17 | 格罗方德半导体公司 | 受应力的场效晶体管的制造方法 |
CN114267628A (zh) * | 2021-03-24 | 2022-04-01 | 青岛昇瑞光电科技有限公司 | 超薄绝缘体上硅(soi)衬底基片及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102856198B (zh) * | 2011-06-27 | 2015-06-24 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6274913B1 (en) * | 1998-10-05 | 2001-08-14 | Intel Corporation | Shielded channel transistor structure with embedded source/drain junctions |
US6420218B1 (en) * | 2000-04-24 | 2002-07-16 | Advanced Micro Devices, Inc. | Ultra-thin-body SOI MOS transistors having recessed source and drain regions |
-
2003
- 2003-10-31 CN CNB2003101034242A patent/CN1328795C/zh not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1314089C (zh) * | 2004-12-21 | 2007-05-02 | 北京大学 | 场效应晶体管的制备方法 |
CN100463143C (zh) * | 2005-07-07 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | 具有氧化物间隔层的应变源漏cmos的集成方法 |
CN100452354C (zh) * | 2005-08-25 | 2009-01-14 | 中芯国际集成电路制造(上海)有限公司 | 多层膜作为硬掩模和抗反射层的应变源漏cmos的制作方法 |
CN104051276A (zh) * | 2006-09-28 | 2014-09-17 | 格罗方德半导体公司 | 受应力的场效晶体管的制造方法 |
CN103094177A (zh) * | 2011-11-08 | 2013-05-08 | 中芯国际集成电路制造(上海)有限公司 | 一种soi和基于soi的mos器件及其制作方法 |
CN114267628A (zh) * | 2021-03-24 | 2022-04-01 | 青岛昇瑞光电科技有限公司 | 超薄绝缘体上硅(soi)衬底基片及其制备方法 |
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Publication number | Publication date |
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CN1328795C (zh) | 2007-07-25 |
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Effective date of registration: 20110128 Address after: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Co-patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
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