CN102856198B - 一种半导体结构及其制造方法 - Google Patents
一种半导体结构及其制造方法 Download PDFInfo
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- CN102856198B CN102856198B CN201110175568.3A CN201110175568A CN102856198B CN 102856198 B CN102856198 B CN 102856198B CN 201110175568 A CN201110175568 A CN 201110175568A CN 102856198 B CN102856198 B CN 102856198B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000002360 preparation method Methods 0.000 title abstract 3
- 239000002184 metal Substances 0.000 claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 44
- 238000004519 manufacturing process Methods 0.000 claims description 29
- 229910010038 TiAl Inorganic materials 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 abstract description 25
- 239000012212 insulator Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- -1 SiCOH Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910020177 SiOF Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 241000849798 Nita Species 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110175568.3A CN102856198B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体结构及其制造方法 |
US13/380,857 US8906753B2 (en) | 2011-06-27 | 2011-08-25 | Semiconductor structure and method for manufacturing the same |
CN201190000059.0U CN203038895U (zh) | 2011-06-27 | 2011-08-25 | 一种半导体结构 |
PCT/CN2011/078877 WO2013000196A1 (zh) | 2011-06-27 | 2011-08-25 | 一种半导体结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110175568.3A CN102856198B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102856198A CN102856198A (zh) | 2013-01-02 |
CN102856198B true CN102856198B (zh) | 2015-06-24 |
Family
ID=47402669
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110175568.3A Active CN102856198B (zh) | 2011-06-27 | 2011-06-27 | 一种半导体结构及其制造方法 |
CN201190000059.0U Expired - Lifetime CN203038895U (zh) | 2011-06-27 | 2011-08-25 | 一种半导体结构 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201190000059.0U Expired - Lifetime CN203038895U (zh) | 2011-06-27 | 2011-08-25 | 一种半导体结构 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8906753B2 (zh) |
CN (2) | CN102856198B (zh) |
WO (1) | WO2013000196A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104347705B (zh) * | 2013-07-29 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种应力沟道pmos器件及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100346483C (zh) * | 2003-08-26 | 2007-10-31 | 国际商业机器公司 | 场效应晶体管以及包括场效应晶体管的集成电路 |
US7541629B1 (en) * | 2008-04-21 | 2009-06-02 | International Business Machines Corporation | Embedded insulating band for controlling short-channel effect and leakage reduction for DSB process |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100344220B1 (ko) * | 1999-10-20 | 2002-07-19 | 삼성전자 주식회사 | 에스·오·아이(soi) 구조를 갖는 반도체 소자 및 그 제조방법 |
KR100374554B1 (ko) * | 2000-09-22 | 2003-03-04 | 주식회사 하이닉스반도체 | 에스오아이 소자의 반도체 몸체-기판 접촉 구조 및 그제조방법 |
CN1328795C (zh) * | 2003-10-31 | 2007-07-25 | 北京大学 | 一种源漏下陷型超薄体soimos晶体管及其制作方法 |
US7923782B2 (en) * | 2004-02-27 | 2011-04-12 | International Business Machines Corporation | Hybrid SOI/bulk semiconductor transistors |
KR100639971B1 (ko) * | 2004-12-17 | 2006-11-01 | 한국전자통신연구원 | 리세스된 소스/드레인 구조를 갖는 초박막의 에스오아이모스 트랜지스터 및 그 제조방법 |
US7271442B2 (en) * | 2005-01-12 | 2007-09-18 | International Business Machines Corporation | Transistor structure having stressed regions of opposite types underlying channel and source/drain regions |
DE102005052055B3 (de) * | 2005-10-31 | 2007-04-26 | Advanced Micro Devices, Inc., Sunnyvale | Eingebettete Verformungsschicht in dünnen SOI-Transistoren und Verfahren zur Herstellung desselben |
US20080121985A1 (en) * | 2006-11-07 | 2008-05-29 | International Business Machines Corporation | Structure and method to improve short channel effects in metal oxide semiconductor field effect transistors |
US7659583B2 (en) * | 2007-08-15 | 2010-02-09 | International Business Machines Corporation | Ultrathin SOI CMOS devices employing differential STI liners |
US20100171118A1 (en) * | 2009-01-08 | 2010-07-08 | Samar Kanti Saha | Junction Field-Effect Transistor Having Insulator-Isolated Source/Drain Regions and Fabrication Method Therefor |
US8669146B2 (en) * | 2011-01-13 | 2014-03-11 | International Business Machines Corporation | Semiconductor structures with thinned junctions and methods of manufacture |
US8466013B2 (en) * | 2011-06-30 | 2013-06-18 | Institute of Microelectronics, Chinese Academy of Sciences | Method for manufacturing a semiconductor structure |
-
2011
- 2011-06-27 CN CN201110175568.3A patent/CN102856198B/zh active Active
- 2011-08-25 WO PCT/CN2011/078877 patent/WO2013000196A1/zh active Application Filing
- 2011-08-25 US US13/380,857 patent/US8906753B2/en active Active
- 2011-08-25 CN CN201190000059.0U patent/CN203038895U/zh not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100346483C (zh) * | 2003-08-26 | 2007-10-31 | 国际商业机器公司 | 场效应晶体管以及包括场效应晶体管的集成电路 |
US7541629B1 (en) * | 2008-04-21 | 2009-06-02 | International Business Machines Corporation | Embedded insulating band for controlling short-channel effect and leakage reduction for DSB process |
Also Published As
Publication number | Publication date |
---|---|
CN102856198A (zh) | 2013-01-02 |
CN203038895U (zh) | 2013-07-03 |
US8906753B2 (en) | 2014-12-09 |
US20140124859A1 (en) | 2014-05-08 |
WO2013000196A1 (zh) | 2013-01-03 |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NMC Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20190220 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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