CN1507631A - 用以在写入存储器阵列时偏压选择和未选择阵列线的方法与装置 - Google Patents
用以在写入存储器阵列时偏压选择和未选择阵列线的方法与装置 Download PDFInfo
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- CN1507631A CN1507631A CNA028096592A CN02809659A CN1507631A CN 1507631 A CN1507631 A CN 1507631A CN A028096592 A CNA028096592 A CN A028096592A CN 02809659 A CN02809659 A CN 02809659A CN 1507631 A CN1507631 A CN 1507631A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/73—Array where access device function, e.g. diode function, being merged with memorizing function of memory element
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (51)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27781501P | 2001-03-21 | 2001-03-21 | |
US27779401P | 2001-03-21 | 2001-03-21 | |
US27773801P | 2001-03-21 | 2001-03-21 | |
US60/277,738 | 2001-03-21 | ||
US60/277,794 | 2001-03-21 | ||
US60/277,815 | 2001-03-21 | ||
US09/897,771 | 2001-06-29 | ||
US09/897,771 US6618295B2 (en) | 2001-03-21 | 2001-06-29 | Method and apparatus for biasing selected and unselected array lines when writing a memory array |
PCT/US2002/008675 WO2002078003A2 (en) | 2001-03-21 | 2002-03-21 | Method and apparatus for biasing selected and unselected array lines when writing a memory array |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1507631A true CN1507631A (zh) | 2004-06-23 |
CN1507631B CN1507631B (zh) | 2012-07-04 |
Family
ID=27501208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN028096592A Expired - Fee Related CN1507631B (zh) | 2001-03-21 | 2002-03-21 | 用以在写入存储器阵列时偏压选择和未选择阵列线的方法与装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6618295B2 (zh) |
CN (1) | CN1507631B (zh) |
AU (1) | AU2002336227A1 (zh) |
MY (1) | MY122955A (zh) |
TW (1) | TW550588B (zh) |
WO (1) | WO2002078003A2 (zh) |
Cited By (6)
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CN101136249B (zh) * | 2006-08-29 | 2012-01-04 | 三星电子株式会社 | 能够基于操作模式产生不同电压的电压产生电路 |
CN101010762B (zh) * | 2004-09-01 | 2012-02-29 | 国际商业机器公司 | 用于电子熔丝的低电压编程和差动检测的集成电路与方法 |
CN104700891A (zh) * | 2013-12-09 | 2015-06-10 | 华邦电子股份有限公司 | 电阻式存储器装置及其写入方法 |
CN104979006A (zh) * | 2014-04-01 | 2015-10-14 | 北京兆易创新科技股份有限公司 | 一种存储器编程方法和系统 |
CN108701483A (zh) * | 2016-02-23 | 2018-10-23 | 德克萨斯仪器股份有限公司 | 具有泄漏补偿的存储器电路 |
CN112530478A (zh) * | 2019-09-17 | 2021-03-19 | 铠侠股份有限公司 | 半导体存储装置 |
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CN108701483A (zh) * | 2016-02-23 | 2018-10-23 | 德克萨斯仪器股份有限公司 | 具有泄漏补偿的存储器电路 |
CN108701483B (zh) * | 2016-02-23 | 2023-03-14 | 德克萨斯仪器股份有限公司 | 具有泄漏补偿的存储器电路 |
CN112530478A (zh) * | 2019-09-17 | 2021-03-19 | 铠侠股份有限公司 | 半导体存储装置 |
CN112530478B (zh) * | 2019-09-17 | 2024-03-05 | 铠侠股份有限公司 | 半导体存储装置 |
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US20020136047A1 (en) | 2002-09-26 |
TW550588B (en) | 2003-09-01 |
WO2002078003A2 (en) | 2002-10-03 |
MY122955A (en) | 2006-05-31 |
AU2002336227A1 (en) | 2002-10-08 |
US6618295B2 (en) | 2003-09-09 |
CN1507631B (zh) | 2012-07-04 |
WO2002078003A3 (en) | 2003-08-07 |
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