CN1484314A - 半导体存储器 - Google Patents
半导体存储器 Download PDFInfo
- Publication number
- CN1484314A CN1484314A CNA031533949A CN03153394A CN1484314A CN 1484314 A CN1484314 A CN 1484314A CN A031533949 A CNA031533949 A CN A031533949A CN 03153394 A CN03153394 A CN 03153394A CN 1484314 A CN1484314 A CN 1484314A
- Authority
- CN
- China
- Prior art keywords
- voltage
- buffer
- memory cell
- word line
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002235896A JP4376495B2 (ja) | 2002-08-13 | 2002-08-13 | 半導体メモリ |
JP235896/2002 | 2002-08-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1484314A true CN1484314A (zh) | 2004-03-24 |
CN1278424C CN1278424C (zh) | 2006-10-04 |
Family
ID=31711978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031533949A Expired - Fee Related CN1278424C (zh) | 2002-08-13 | 2003-08-12 | 半导体存储器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6914797B2 (zh) |
JP (1) | JP4376495B2 (zh) |
KR (1) | KR101035933B1 (zh) |
CN (1) | CN1278424C (zh) |
TW (1) | TWI222066B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945739B (zh) * | 2005-10-04 | 2010-08-18 | 株式会社瑞萨科技 | 半导体存储器件 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4646636B2 (ja) * | 2004-02-20 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2007102188A1 (ja) * | 2006-03-03 | 2007-09-13 | Fujitsu Limited | 半導体記憶装置 |
JP5057739B2 (ja) * | 2006-10-03 | 2012-10-24 | 株式会社東芝 | 半導体記憶装置 |
KR101131945B1 (ko) | 2010-07-07 | 2012-03-29 | 주식회사 하이닉스반도체 | 비휘발성 메모리 장치 |
US8913421B2 (en) * | 2013-03-11 | 2014-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Writing to a memory cell |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169599B2 (ja) * | 1990-08-03 | 2001-05-28 | 株式会社日立製作所 | 半導体装置、その駆動方法、その読み出し方法 |
US5477499A (en) * | 1993-10-13 | 1995-12-19 | Advanced Micro Devices, Inc. | Memory architecture for a three volt flash EEPROM |
JP3085455B2 (ja) | 1997-06-25 | 2000-09-11 | 日本電気株式会社 | スタティックram |
JP3560480B2 (ja) | 1998-10-05 | 2004-09-02 | シャープ株式会社 | スタティック・ランダム・アクセスメモリ |
US6271713B1 (en) * | 1999-05-14 | 2001-08-07 | Intel Corporation | Dynamic threshold source follower voltage driver circuit |
-
2002
- 2002-08-13 JP JP2002235896A patent/JP4376495B2/ja not_active Expired - Fee Related
-
2003
- 2003-07-30 TW TW092120819A patent/TWI222066B/zh not_active IP Right Cessation
- 2003-07-30 US US10/629,588 patent/US6914797B2/en not_active Expired - Lifetime
- 2003-08-11 KR KR1020030055345A patent/KR101035933B1/ko not_active IP Right Cessation
- 2003-08-12 CN CNB031533949A patent/CN1278424C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1945739B (zh) * | 2005-10-04 | 2010-08-18 | 株式会社瑞萨科技 | 半导体存储器件 |
Also Published As
Publication number | Publication date |
---|---|
TW200405343A (en) | 2004-04-01 |
KR20040015682A (ko) | 2004-02-19 |
JP2004079044A (ja) | 2004-03-11 |
TWI222066B (en) | 2004-10-11 |
US20040032768A1 (en) | 2004-02-19 |
KR101035933B1 (ko) | 2011-05-23 |
JP4376495B2 (ja) | 2009-12-02 |
CN1278424C (zh) | 2006-10-04 |
US6914797B2 (en) | 2005-07-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081017 Address after: Tokyo, Japan, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kawasaki, Kanagawa, Japan Patentee before: Fujitsu Ltd. |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150514 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150514 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Kanagawa Patentee before: Fujitsu Semiconductor Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061004 Termination date: 20180812 |