CN1462071A - 用于柔性互连封装的系统 - Google Patents

用于柔性互连封装的系统 Download PDF

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CN1462071A
CN1462071A CN03107697A CN03107697A CN1462071A CN 1462071 A CN1462071 A CN 1462071A CN 03107697 A CN03107697 A CN 03107697A CN 03107697 A CN03107697 A CN 03107697A CN 1462071 A CN1462071 A CN 1462071A
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coupled
flexible
fingerprint sensor
contact
wire
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CN03107697A
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CN1310320C (zh
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迈克尔·曼纳萨拉
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Socionext Inc
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Fujitsu Ltd
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
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    • G06V40/12—Fingerprints or palmprints
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    • G06V40/1329—Protecting the fingerprint sensor against damage caused by the finger
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Abstract

本发明涉及一种柔性互连封装系统。本系统提供一种包括内部通路的柔性基板材料，所述通路耦合到安装在基板上的指纹传感器。指纹传感器的接合片使用诸如引线接合、球/凸块方法、自动带接合(TAB)、或任何其它用于集成电路的应用接合方法等，而连接到内部通路的导电通路片。最终包装包括形成敞口空腔的预制包装，由此允许暴露指纹传感器的传感器表面，以供用户接近。

Description

用于柔性互连封装的系统
相关专利申请的交叉引用
本专利申请引用共同拥有的美国专利申请作为参考，此美国专利申请为2002年3月9日申请的名称为“用于提供敞口空腔低型面包封半导体包装的系统”，并且序列号为10/094954。在所有目的方面，上述专利申请的全部内容在此引作参考。
技术领域
本发明涉及封装系统，并更具体地涉及柔性互连封装系统。
背景技术
由于许多消费者电子器件的尺寸缩小，因此封装系统变得日益重要。例如，蜂窝电话变得越来越小，以满足消费者希望便携式电话重量轻且易于携带的愿望。这些器件还必须提供消费者所要求的全部特征和功能。对于蜂窝电话通常要求有键盘、显示器和发声器。可以预料，最新式的电话将包括红外线(IR)接口、视频能力和用于增加安全性的指纹传感器。进而，消费者器件越来越小的进步以及特征的改进正在超越蜂窝电话的技术水平，达到诸如个人数字助理(PDA)和笔记本计算机的技术水平。
器件越来越小的趋势已着重强调各种用于把各个内部系统组件集成在器件壳体内的封装系统。然而，常规封装技术利用刚性电路板，以便固定组件并把组件电耦合在一起。结果，对于在壳体内在何处且如何布置组件以及所述组件在壳体外表面如何面对消费者，存在着限制。
电子封装中一个最重要的问题是封装问题和互连集成电路(IC)。IC是电子系统控制的核心，并且由于它们一般对电气、机械、物理和化学的影响敏感，因此需要封装工程师对它们认真考虑。同样地，IC封装是生产现代系统的过程的中间环节。
图1示出电子封装的三个阶段。封装(IC封装)的第一阶段是IC芯片120组装到IC包装122中。IC包装是保证对IC芯片进行环境保护的壳体，并且为下一阶段互连提供完全的测试和高产量的组装。IC包装提供对IC芯片互连的第一工序。IC芯片通过引线接合、自动带接合(TAB)或使用倒装片冲击方法而耦合到外部包装引脚。
封装的第二阶段可以描述为IC包装组装到承载电路板124上。承载电路板一般由单层或多层刚性基板组成，并设计得承载IC包装，以便提供对主印刷电路板(PCB)或底板126的下一阶段互连。
IC包装122和承载电路板124之间的互连接合一般通过焊球、IC插座和/或焊接片而有可能形成。当承载电路板124最终连接到主板(PCB)126时，完成封装的第三阶段。因而，目前的封装系统提供用于封装和互连电子组件的刚性封装结构系统。
图2示出把电气组件耦合到主电路板的另一常规技术。例如，电气组件为指纹传感器。电气组件102安装到较小的包括连接器106的刚性印刷电路板104上。主印刷电路板108还包括连接器110。接口电缆112把小电路板104耦合到主电路扳108。接口电缆112包括分别与连接器106和110配合的配合连接器114、116。因而，小电路板104和相关的连接器106、114用于把组件102耦合到主电路板108。
对于上述封装系统，容易发现存在几个局限性。例如，把组件102连接到主电路板108比较昂贵，因为它需要其上安装组件102的小电路板104以及与接口电缆112配合的连接器106、114。进而，该技术导致尺寸和柔性上的局限性，这是因为电路板104和相关连接器(106、114)的尺寸限制在壳体中何处以及如何布置组件102，而且限制所述组件在器件外表面如何面对用户。
因此，希望有一种允许组件耦合在一起的封装系统，此系统不受现有封装系统所存在的制约和限制。
发明内容
本发明包括柔性互连封装系统。本系统利用柔性印刷电路板作为主基板材料。在一个实施例中，使用标准模型连接粘合剂(导电的或非导电的)，把组件安装或连接到所述基板。所述组件的接合片用诸如引线接合、球/凸块方法、自动带接合(TAB)、或任何其它用于集成电路的应用接合工艺的技术，连接到柔性基板的导电通路片(conductive trace pad)。所述封装包括为预制包装形式的塑料转移成型，所述预制包装提供物理支撑和保护，并且在组件和基板之间实现可靠的连接。
使用本发明的封装系统提供超过常规系统的几个优点。在常规系统中，IC器件通常必须与主电路板的方向一致。然而，本发明的封装系统允许电路弯曲，从而提供一种实际上以任意方向放置器件的方法。例如，组件可布置得与主电路板分开，并且组件相对于主电路板的方向实际上是任意的。例如，组件可以是用于蜂窝电话中的指纹传感器。本发明的封装系统允许指纹传感器布置得与主电路板分开，并且在蜂窝电话的外表面上暴露和确定方向，以便提供最好的传感器位置供蜂窝电话用户使用。
进而，所述封装系统允许器件通过位于电路板上的单个接插件而耦合到主电路板，从而，从电路容易接近并且快速连接和断开所述器件。这使用户容易更换，且不需把器件送回制造商。所述封装系统可应用于所有类型的电子器件、光学器件、接触/压力器件和任何其它类型的传感器或电气组件。
因而，已经消除对传感器在指定外壳(蜂窝电话、PDA等)上放置的限制。例如，根据本发明一个或多个实施例所提供的优点，蜂窝电话设计者现在能在外壳任意位置上自由地选择传感器组件的安装位置。由于所述封装系统容易从主电路板连接和断开，因此，传感器可以被最终用户更换或者可以在现场使用地点更换。因而，器件不必送回服务中心，并且用户不必花许多天来等待修复所述器件。
在本发明的一个实施例中，提供一种用于耦合电气组件的柔性互连装置。所述电气组件具有至少一个接触片，所述互连装置包括：柔性基板；以及柔性基板中的至少一个导电通路，其中，至少一个导电通路具有暴露的接触区，所述接触区直接电耦合到所述至少一个接触片。
在本发明的另一个实施例中，提供一种用于把指纹传感器柔性耦合到外部电路的柔性互连装置。所述互连装置包括：具有一个或多个导电通路的柔性基板，所述导电通路在一端形成连接器。所述连接器与耦合到外部电路的相应连接器配合。指纹传感器连接到所述基板并具有传感器表面。指纹传感器具有引线接合到导电通路的传感器触点。所述装置还包括耦合到指纹传感器之下的基板底部的模制包装，模制包装形成允许暴露指纹传感器的传感器表面以供用户接近的敞口顶部空腔。
附图说明
结合以下附图并根据以下详细描述，可以更加容易地理解本发明的前述几个方面和相应优点，在附图中：
图1示出电子封装的三个阶段；
图2示出常规封装系统的视图；
图3示出根据本发明构造的柔性互连封装系统的一个实施例的视图；
图4示出根据本发明构造的封装系统的一个实施例的侧视图；
图5示出根据本发明构造的柔性互连封装系统的第三实施例的视图；
图6示出根据本发明构造的柔性互连封装系统的第四实施例的视图；
图7示出根据本发明构造的柔性互连封装系统的第五实施例的视图；
图8示出使用根据本发明的柔性互连封装系统的三个器件。
具体实施方式
本发明包括克服常规封装系统限制的柔性互连封装系统。例如，在一个实施例中，所提供的柔性封装系统包括柔性基板和预先模制的或后组装的模制塑料包装，所述塑料包装形成用于容纳指纹传感器的敞口空腔。此种柔性封装系统可用于蜂窝电话或其它便携式电子器件的壳体内，以便在器件壳体的外表面设置传感器，同时把传感器电耦合到其方向与传感器方向不同的内电路板。
上述封装系统适合于形状因数非常小的器件，并且生产成本相对较低。进而，在传感器损坏的情况下，容易更换封装系统。例如，当指纹传感器和诸如钥匙或硬币的硬材料放在装有蜂窝电话的口袋里时，指纹传感器容易被硬材料损伤。
典型实施例
图3示出根据本发明构造的柔性互连封装系统200的一个实施例。系统200包括通常用202表示的基板材料。基板202包括顶部基板部分204和底部基板部分206。示出的电子组件208固定到顶部基板部分204上。在一个实施例中，组件208使用(导电的或不导电的)高温模片附着环氧树脂固定到基板204上。在另一个实施例中，组件208使用导电的或不导电的高温胶带固定。然而，任何适当的连接方式可用于把组件208固定到的基板204上。
一组通常用210表示的导电通路位于顶部和底部基板部分204和206之间。导电通路在组件208和边缘连接器212之间传递电信号。边缘连接器212构造得连接位于主电路板上的配合连接器(未示出)。导电通路由铜或其它适当的导电材料构成。在一个实施例中，通路层叠在顶部和底部基板部分之间。然而，其它工艺可用于把导电通路和基板结合在一起。例如，有可能把导电通路嵌入到单个基板部分中。
在图3所示的实施例中，只有一层导电通路。然而，有可能包括多层导电通路，在这，每层用辅助基板材料或其它适当柔性材料分隔和/或孤立。因而，有可能形成使用多层导电通路发送信号的复合电路，其中，所述多层导电通路具有电耦合不同层上通路的导电通道。
在边缘连接器212上，除去顶部基板部分中的一部分，以暴露导电通路的接触区214。接触区214与配合连接器的相应接触区配合，以使电信号从封装系统200传送到主电路板。如果需要，接触区可以是镀金的。边缘连接器212包括连接到接触区214之下底部基板部分206的加强筋206。加强筋用于加强边缘连接器212，并使之保持相对扁平或平直。
顶部基板部分还包括用218表示的间断，在此间断处除去一段顶部基板。顶部基板204被除去的段暴露出通路210的区域，所述区域称作通路片220。顶部基板部分被除去的段的位置靠近组件208。
组件208包括接触片222，接触片222耦合到组件208的内电路线路并且用于使组件连接到其它电路。在本发明的一个实施例中，接合引线224在接触片222和通路片220之间接合。接合引线用常规接合技术连接。基于以下几个原因，引线接合技术是用于器件互连的优选方法。第一，由于与任何互连方法相比，每根金引线连接的成本是最低的，因此接合引线成本低。第二，金引线是柔性的，并可根据所需的环形顺序、环形高度、或其它技术所不能提供的其它形状而定形或成形。第三，接合片可被电镀。柔性基板上的铜片非常适合于镀金或淀积金。这允许与金引线100％的兼容性，从而通过热声学工艺完成的金-金接合是非常可靠的。最后，容易使用接合机器，因为它们是可在任何指定组装铸造工厂使用的标准机器，并且所述工艺是标准的和低成本的，从而可支持无限的容量要求。
为了满足接合工艺的温度要求，柔性基板部分204和206包括高温基板材料。在一个实施例中，基板部分包括聚酰亚胺材料。例如，聚酰亚胺材料可以是称作“Kapton”的材料，此材料具有大约-200～+300℃的使用温度范围。适用于作为柔性基板部分204和206的另一材料称作“无粘性Kapton”。此材料具有大约-200～+350℃的使用温度范围。然而，柔性基板材料并不局限于上述材料，并可包括其使用温度可承受引线接合工艺或焊接工艺的任何柔性材料。因而，在一个实施例中，柔性基板材料基本上是具有薄片层铜通路的聚酰亚胺基板基础材料，所述铜通路用于在硅器件和外部边缘触点之间互连。
在安装接合引线之后，提供包封部分(未示出)以覆盖和保护接合引线222、接触片222和通路触点220。包封部分在此文的另一段落中更详细地讨论。进而，图3封装系统没有按比例示出，这是因为以224示出的封装系统部分可以比示出的长得多，从而允许组件布置得距边缘连接器212的距离可以改变。这允许封装系统提供最大的柔性，这是因为基板部分是柔性的并允许弯曲和扭曲以便组件222的方向朝着所需要的方向，而与边缘连接器212的方向无关。
图4示出根据本发明构造的封装系统300的一个实施例的侧视图。封装系统300分别包括顶部和底部基板部分302和304。系统300还包括导电通路区306、静电放电区308和预制包装310。
封装系统300包括传感器组件312。在一个实施例中，传感器组件是指纹传感器，并且包括传感器区314和一个或多个传感器触点316。一个或多个传感器触点316允许从传感器区获得的数据传递到其它电路。如果需要，传感器组件也可包括其它类型的IC传感器。
导电通路区306包括一个或多个导电通路326，导电通路326具有一个或多个通路触点318。例如，顶部基板部分302包括暴露所述一个或多个通路触点的开口。传感器触点和通路触点用接合引线320耦合在一起。结果，指纹传感器的信号经接合引线320从传感器触点316传递到通路触点318，以便在导电通路326上传输。
导电通路326包括形成边缘连接器322一部分的边缘触点320，边缘连接器322允许封装系统300耦合到作为其它电路中一部分的配合连接器。因而，指纹传感器的信号有可能经边缘连接器传递到其它电路。边缘连接器322还可包括用于支持边缘连接器322平直的加强筋(未示出)。
预制包装310解决在实际封装工艺中发生的各种限制和问题。由于在柔性基板下面的包装310提供额外的加强支撑，因此，全部芯片接合表面区域和可接合的通路触点318得到良好支撑。这用于阻遏在接合工艺中发生的任何弯曲动作，由此避免严重的封装和/或组装质量问题，这些问题如下所述。
A)在引线接合柔性基板时遇到的引线接合缺陷和故障，这是因为其材料表面与其它常规硬基板材料相比更“柔软”，所述常规硬基板材料例如为金属铅框架和有机基片PC板。例如，当毛细管引线接合工具接触柔性基板接合片时，为了使引线完全接合互连到硅芯片接合片，柔性基板的软度自然地经历从引线接合毛细管的顶端“跳起”的动作。这种现象称为“跳动毛细管”，并且会导致各种程度和形式的引线接合不完整以及质量缺陷，如断线、片上不粘附、粉碎性球接合、粗球、或细球等。
B)在封装组装工艺中的操作问题，在此工艺中，器件安装到柔性基板上，没有任何如本发明以上所述的增强或加强材料。因连接到柔性基板上的器件的单片或多片的偶然撞击、冲击或误送，使器件受损的危险可潜在地使柔性基板遭受变形、弯曲和折皱。因而，与器件操作和误送有关的几个质量缺陷可直接导致器件的可靠性故障。
本发明的预制包装用于减少或消除上述缺陷，从而实现器件和基板之间的可靠连接。预制包装310通过提供对基板材料底部和侧面的支撑而达到此结果。实际上，预制包装310提供允许组件安装到基板顶部上的敞口空腔。通过提供此敞口空腔，所述组件可以是诸如指纹传感器的传感器件，当指纹传感器被用户接触时阅读用户数据。在预制包装完全包封基板材料的情况下，安装此种传感器是不可能的，这样也就不能接近传感器表面。
在封装系统300中还包括包封区324，包封区324覆盖并保护接合引线320、传感器触点316和通路触点318。包封区324可包括塑料环氧树脂材料(团块顶部分配(glob top)、模制等)或其它适当的材料。因而，封装系统300提供这样一种方法，此方法用柔性基板封装指纹传感器312，并且不使用单独的电路板和辅助接口连接器就把所述传感器电耦合到另一电路。基板302、304和接触区306的长度选择得允许折叠和扭曲指纹传感器，使其方向朝着所希望的方向，而与边缘连接器322的方向无关。
根据本发明，封装系统300的优点是提供一种组装好的传感器包装，此包装适用于安装在最终的产品组装应用(即蜂窝电话、PDA、遥控钥匙锁等)中。由于此包装的结构包括在指纹扫描传感器的侧面和底面周围设置的加强物，因此，最终安装时，所述包装容易定位并固定到指定器件外壳的任意部件上。例如，预制包装可固定、紧固或扣入器件壳体中所设置的槽内，这使得传感器表面暴露在外壳上。预制包装的独特结构允许在封装系统中使用指纹传感器，因为所述包装提供可以接近传感器的“敞口顶部空腔”模制工艺，而不是完全包封器件，完全包封器件不允许接近传感器。
图5示出根据本发明构造的柔性互连封装系统400的另一实施例的视图。系统400包括顶部和底部基板部分402和404、以及导电通路区406。系统400用于柔性封装指纹传感器组件408，组件408具有传感器区410和传感器触点412。通路触点414通过顶部基板部分402分段中的间断而暴露。
接合引线416用于把传感器触点412耦合到通路触点414。包封材料418用于覆盖并保护接合引线和相关触点。提供导电触电420，以使指纹传感器组件408的信号通过传感器触点412、接合引线418和通路触点414传输，并通过导电触点420到达外部电路。
图6示出根据本发明构造的柔性互连封装系统500的另一实施例的视图。在此实施例中，金球凸块技术用于把指纹传感器组件耦合到柔性互连包装。
系统500包括环绕导电通路区506的柔性基板部分502和504。通路区506包括以508和510所示的通路触点。通路区包括与相应通路触点耦合的内部导电通路。例如，一个导电通路把一个以510表示的通路触点与一个以508表示的通路触点耦合在一起。
安装到柔性封装上的组件512包括组件触点514。组件触点514用导电球516技术耦合到通路触点510。包封部分518用于覆盖所述组件和通路触点，并用于加强组件与柔性包装的连接。
柔性封装系统500形成以520表示的边缘连接器。在一个实施例中，边缘连接器520用加强筋(未示出)加强。边缘连接器520连接到配合连接器，所述配合连接器耦合到外部电路。例如，配合连接器可以在包括主处理电路的主电路板上。从所述组件经组件触点和导电通路传递的信号通过边缘连接器而输入到外部电路。由于封装系统500是柔性的，因此，基板部分502、504和导电通路区506可以折叠、弯曲或扭曲，以允许组件512实际上相对于主电路板的任何方向取向。因而，壳体(即蜂窝电话壳体)内的组件位置不受主电路板的位置或方向的限制。进而，由于柔性封装系统500不需要小电路板耦合到所述组件，因此可实现额外的尺寸和空间，并节省成本。
图7示出根据本发明构造的柔性互连封装系统600的另一实施例的视图。图7解释柔性互连封装系统如何包括在此封装系统自身内互连的多个组件。
系统600包括环绕柔性导电通路区606的顶部和底部柔性基板部分602和604。组件608和610连接到顶部基板602。所述组件包括用于从所述组件传输信息信号的组件触点612。
导电通路区606包括用于从所述组件到626所示边缘连接器承载信号的导电通路616。除去624所示的一部分顶部，以暴露导电通路的通路片614。
在系统600中示出导电通路618，导电通路618把通路片620和通路片622耦合在一起。通路片(614、620、622)经接合引线632耦合到接触片612。从所述组件流进和流出的信号流经接合引线。
对于通路618，此通路用于耦合组件608和610之间的信号。例如，从组件608经通路片622传输的信号通过通路片620流向组件610。因而，根据本发明提供的柔性封装用于在多个组件之间发送信号。因此有可能在柔性互连包装上安装多个组件，并在那些组件之间发送信号以执行特定的功能。例如，有可能在根据本发明构造的柔性互连包装上安装麦克风组件和与其有关的前置放大器电路线路。因而，例如在蜂窝电话壳体内，柔性麦克风包装容易与主电路板耦合或去耦。柔性包装允许麦克风位于壳体中的任何地方，而与主电路板的方向无关。
图8示出使用根据本发明的柔性互连封装系统的三个器件。例如，在以上任一实施例中描述的封装系统可用于把指纹传感器耦合到蜂窝电话、PDA和智能卡内的主电路板。在所有这些器件中，柔性互连封装允许传感器的方向与主电路板无关，从而有可能在器件外表面实现对用户所需的呈现。
在一个实施例中，在柔性封装系统中包括预制包装，以便在蜂窝电话壳体上安装指纹传感器。预制包装用于在把指纹传感器接合到柔性基板的引线接合工艺中支撑柔性基板。预制包装包括允许指纹传感器安装到柔性基板的敞口顶部空腔，同时保证用户接近指纹传感器的传感器表面。因而，柔性封装系统允许指纹传感器实际上安装在蜂窝电话壳体的任何位置上，并且使传感器表面暴露得供用户接近。柔性基板允许指纹传感器的安装与指纹传感器相对于所连接的主要内部电路板的方向无关。
本发明包括柔性互连封装系统。上述实施例对于本发明是说明性的，并不用于把本发明的范围限制在所述特定实施例上。相应地，虽然已举例并描述本发明的一个或多个实施例，但可以理解，只要不偏离本发明的精神或基本特性，就可对本发明进行各种改变。相应地，本文的内容和描述是示例性的，但并不用于限制后附权利要求所述的本发明范围。

Claims (17)

1.一种用于耦合电气组件的柔性互连装置，所述电气组件具有至少一个接触片，所述互连装置包括：
柔性基板；以及
柔性基板中的至少一个导电通路，其中，至少一个导电通路具有暴露的接触区，所述接触区直接电耦合到所述至少一个接触片。
2.如权利要求1所述的装置，其中，电气组件是集成电路，并且至少一个接触片包括至少一个印模触点。
3.如权利要求2所述的装置，其中，暴露的接触区引线接合到至少一个印模触点。
4.如权利要求2所述的装置，其中，暴露的接触区用球/凸块方法耦合到至少一个印模触点。
5.如权利要求2所述的装置，其中，暴露的接触区用自动带接合方法而耦合到至少一个印模触点。
6.如权利要求2所述的装置，进一步包括覆盖暴露接触区和印模触点的包封材料。
7.如权利要求6所述的装置，其中，包封材料是预制包装。
8.如权利要求6所述的装置，其中，包封材料是被传递模塑成的。
9.如权利要求2所述的装置，其中，柔性基板包括配置得与配合连接器配合的第二接触区。
10.如权利要求2所述的装置，其中，柔性基板包括第二接触区和第三接触区，其中，第二和第三接触区配置得与相应的配合连接器配合。
11.提供一种把电气组件耦合到基板材料的柔性互连装置的方法，所述电气组件具有至少一个接触片，并且基板材料具有至少一个包括暴露接触区的导电通路，本方法包括以下步骤：
把电气组件固定到基板材料；以及
把至少一个印模触点引线接合到暴露的接触区。
12.如权利要求11所述的方法，其中，引线接合的步骤是用TAB把至少一个印模触点耦合到暴露接触区的引线接合步骤。
13.如权利要求11所述的方法，其中，引线接合的步骤是用球/方法把至少一个印模触点耦合到暴露接触区的引线接合步骤。
14.如权利要求12所述的方法，进一步包括用包封材料覆盖至少一个印模触点和暴露接触区的步骤。
15.一种用于把指纹传感器柔性耦合到外部电路的柔性互连装置，所述互连装置包括：
具有一个或多个导电通路的柔性基板，所述导电通路在一端形成连接器，所述连接器与耦合到外部电路的相应连接器配合；
连接到所述基板并具有传感器表面的指纹传感器，指纹传感器具有引线接合到导电通路的传感器触点；以及
耦合到指纹传感器之下的基板底部部分的模制包装，模制包装形成允许暴露指纹传感器的传感器表面以供用户接近的敞口顶部空腔。
16.如权利要求15所述的装置，其中，指纹传感器安装到蜂窝电话的壳体上，以使传感器表面暴露在壳体外表面上，并且其中，外部电路位于壳体内的主PCB上。
17.如权利要求16所述的装置，其中，指纹传感器安装在其方向与相关主PCB的方向无关的壳体上。
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101393898B (zh) * 2007-09-21 2012-04-18 日月光半导体制造股份有限公司 封装结构及其制造方法
CN102087536B (zh) * 2009-12-07 2012-08-08 无锡江南计算技术研究所 刀片装置
CN103748976A (zh) * 2011-08-24 2014-04-23 大陆-特韦斯贸易合伙股份公司及两合公司 具有唯一的电支承件的传感器
CN107437046A (zh) * 2016-05-25 2017-12-05 讯芯电子科技（中山）有限公司 指纹传感器封装结构及其制作方法
CN108495587A (zh) * 2016-01-26 2018-09-04 奈克斯特生物测定学集团公司 具有指纹传感器的柔性卡
CN108490031A (zh) * 2018-04-02 2018-09-04 中国工程物理研究院激光聚变研究中心 一种柔性气体传感器封装结构及其封装方法
CN111344714A (zh) * 2017-09-19 2020-06-26 傲迪司威生物识别公司 适合集成到电子设备中的双面传感器模块

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1374146B1 (en) * 2000-12-05 2005-10-19 Validity Sensors Inc. Swiped aperture capacitive fingerprint sensing systems and methods
US7146029B2 (en) * 2003-02-28 2006-12-05 Fujitsu Limited Chip carrier for fingerprint sensor
JP4049112B2 (ja) * 2004-03-09 2008-02-20 株式会社日立製作所 電子装置
US8131026B2 (en) 2004-04-16 2012-03-06 Validity Sensors, Inc. Method and apparatus for fingerprint image reconstruction
WO2005104012A1 (en) * 2004-04-16 2005-11-03 Validity Sensors, Inc. Finger position sensing methods and apparatus
US8229184B2 (en) 2004-04-16 2012-07-24 Validity Sensors, Inc. Method and algorithm for accurate finger motion tracking
US8077935B2 (en) 2004-04-23 2011-12-13 Validity Sensors, Inc. Methods and apparatus for acquiring a swiped fingerprint image
US8447077B2 (en) 2006-09-11 2013-05-21 Validity Sensors, Inc. Method and apparatus for fingerprint motion tracking using an in-line array
US8165355B2 (en) 2006-09-11 2012-04-24 Validity Sensors, Inc. Method and apparatus for fingerprint motion tracking using an in-line array for use in navigation applications
US8358815B2 (en) 2004-04-16 2013-01-22 Validity Sensors, Inc. Method and apparatus for two-dimensional finger motion tracking and control
US8175345B2 (en) 2004-04-16 2012-05-08 Validity Sensors, Inc. Unitized ergonomic two-dimensional fingerprint motion tracking device and method
US7411279B2 (en) * 2004-06-30 2008-08-12 Endwave Corporation Component interconnect with substrate shielding
US7348666B2 (en) * 2004-06-30 2008-03-25 Endwave Corporation Chip-to-chip trench circuit structure
WO2006019911A1 (en) * 2004-07-26 2006-02-23 Sun Microsystems, Inc. Multi-chip module and single-chip module for chips and proximity connectors
DE602005022900D1 (de) 2004-10-04 2010-09-23 Validity Sensors Inc Fingerabdruckerfassende konstruktionen mit einem substrat
US20060093192A1 (en) 2004-11-03 2006-05-04 Bechtel J S Finger guide device
US7929736B2 (en) * 2004-11-03 2011-04-19 Pen-One, Inc. Finger guide device for use with stylus or pen
US20060129839A1 (en) * 2004-12-13 2006-06-15 Jun Ye Flexchip-mounted fingerprint sensor
US7383691B2 (en) * 2005-01-26 2008-06-10 Hewlett-Packard Development Company, L.P. Modular networked sensor assembly
KR100652904B1 (ko) * 2005-05-12 2006-12-01 한국과학기술원 센서 시스템
US7460697B2 (en) * 2005-07-19 2008-12-02 Validity Sensors, Inc. Electronic fingerprint sensor with differential noise cancellation
JP4351201B2 (ja) * 2005-09-16 2009-10-28 富士通株式会社 指紋センサ付き携帯装置
US8358816B2 (en) 2005-10-18 2013-01-22 Authentec, Inc. Thinned finger sensor and associated methods
CA2626526C (en) * 2005-10-18 2013-03-19 Authentec, Inc. Finger sensor including flexible circuit and associated methods
TWI308381B (en) * 2006-03-22 2009-04-01 Advanced Semiconductor Eng Package structure and manufacturing method thereof
KR100792670B1 (ko) * 2006-06-13 2008-01-09 주식회사 애트랩 반도체 장치 및 접촉센서 장치
US8026903B2 (en) * 2007-01-03 2011-09-27 Apple Inc. Double-sided touch sensitive panel and flex circuit bonding
US8107212B2 (en) 2007-04-30 2012-01-31 Validity Sensors, Inc. Apparatus and method for protecting fingerprint sensing circuitry from electrostatic discharge
US8290150B2 (en) 2007-05-11 2012-10-16 Validity Sensors, Inc. Method and system for electronically securing an electronic device using physically unclonable functions
CN101414565B (zh) 2007-10-16 2012-07-04 飞思卡尔半导体（中国）有限公司 形成预成型引线框的方法
US7592204B2 (en) * 2007-11-29 2009-09-22 Honeywell International Inc. Package design of small diameter sensor
US8276816B2 (en) 2007-12-14 2012-10-02 Validity Sensors, Inc. Smart card system with ergonomic fingerprint sensor and method of using
US8204281B2 (en) 2007-12-14 2012-06-19 Validity Sensors, Inc. System and method to remove artifacts from fingerprint sensor scans
US20090194857A1 (en) * 2008-02-01 2009-08-06 Yong Liu Thin Compact Semiconductor Die Packages Suitable for Smart-Power Modules, Methods of Making the Same, and Systems Using the Same
US8116540B2 (en) 2008-04-04 2012-02-14 Validity Sensors, Inc. Apparatus and method for reducing noise in fingerprint sensing circuits
US8005276B2 (en) 2008-04-04 2011-08-23 Validity Sensors, Inc. Apparatus and method for reducing parasitic capacitive coupling and noise in fingerprint sensing circuits
TWI444903B (zh) 2008-07-22 2014-07-11 Validity Sensors Inc 提供裝置組件安全之系統及其方法
CN201238309Y (zh) * 2008-08-13 2009-05-13 深圳华为通信技术有限公司 一种通信设备
US8149001B2 (en) * 2008-08-15 2012-04-03 Standard Microsystems Corporation Low cost fingerprint sensor system
US8391568B2 (en) 2008-11-10 2013-03-05 Validity Sensors, Inc. System and method for improved scanning of fingerprint edges
US8600122B2 (en) 2009-01-15 2013-12-03 Validity Sensors, Inc. Apparatus and method for culling substantially redundant data in fingerprint sensing circuits
US8278946B2 (en) 2009-01-15 2012-10-02 Validity Sensors, Inc. Apparatus and method for detecting finger activity on a fingerprint sensor
US8374407B2 (en) 2009-01-28 2013-02-12 Validity Sensors, Inc. Live finger detection
JP5212159B2 (ja) * 2009-02-16 2013-06-19 株式会社デンソー センサ装置
US8072764B2 (en) 2009-03-09 2011-12-06 Apple Inc. Multi-part substrate assemblies for low profile portable electronic devices
KR101585211B1 (ko) * 2009-04-09 2016-01-13 삼성전자주식회사 전자 장치
US9336428B2 (en) 2009-10-30 2016-05-10 Synaptics Incorporated Integrated fingerprint sensor and display
US9274553B2 (en) 2009-10-30 2016-03-01 Synaptics Incorporated Fingerprint sensor and integratable electronic display
US9400911B2 (en) 2009-10-30 2016-07-26 Synaptics Incorporated Fingerprint sensor and integratable electronic display
US8791792B2 (en) 2010-01-15 2014-07-29 Idex Asa Electronic imager using an impedance sensor grid array mounted on or about a switch and method of making
US8421890B2 (en) 2010-01-15 2013-04-16 Picofield Technologies, Inc. Electronic imager using an impedance sensor grid array and method of making
US8866347B2 (en) 2010-01-15 2014-10-21 Idex Asa Biometric image sensing
US9666635B2 (en) 2010-02-19 2017-05-30 Synaptics Incorporated Fingerprint sensing circuit
US8716613B2 (en) 2010-03-02 2014-05-06 Synaptics Incoporated Apparatus and method for electrostatic discharge protection
US9001040B2 (en) 2010-06-02 2015-04-07 Synaptics Incorporated Integrated fingerprint sensor and navigation device
KR101503183B1 (ko) 2010-06-18 2015-03-16 오쎈테크, 인코포레이티드 감지 영역 위에 캡슐화 층을 포함하는 핑거 센서 및 관련 방법
US8717775B1 (en) * 2010-08-02 2014-05-06 Amkor Technology, Inc. Fingerprint sensor package and method
US8331096B2 (en) 2010-08-20 2012-12-11 Validity Sensors, Inc. Fingerprint acquisition expansion card apparatus
US8553420B2 (en) 2010-10-19 2013-10-08 Tessera, Inc. Enhanced stacked microelectronic assemblies with central contacts and improved thermal characteristics
US8701267B2 (en) * 2010-11-05 2014-04-22 Authentec, Inc. Method of making a finger sensor package
US8594393B2 (en) 2011-01-26 2013-11-26 Validity Sensors System for and method of image reconstruction with dual line scanner using line counts
US8538097B2 (en) 2011-01-26 2013-09-17 Validity Sensors, Inc. User input utilizing dual line scanner apparatus and method
GB2489100A (en) 2011-03-16 2012-09-19 Validity Sensors Inc Wafer-level packaging for a fingerprint sensor
US8928153B2 (en) 2011-04-21 2015-01-06 Tessera, Inc. Flip-chip, face-up and face-down centerbond memory wirebond assemblies
US8633576B2 (en) 2011-04-21 2014-01-21 Tessera, Inc. Stacked chip-on-board module with edge connector
US8952516B2 (en) 2011-04-21 2015-02-10 Tessera, Inc. Multiple die stacking for two or more die
US9013033B2 (en) 2011-04-21 2015-04-21 Tessera, Inc. Multiple die face-down stacking for two or more die
US8970028B2 (en) 2011-12-29 2015-03-03 Invensas Corporation Embedded heat spreader for package with multiple microelectronic elements and face-down connection
US8337216B1 (en) * 2011-07-26 2012-12-25 Apple Inc. Touch sensor back plane ground connection
US10043052B2 (en) 2011-10-27 2018-08-07 Synaptics Incorporated Electronic device packages and methods
US9195877B2 (en) 2011-12-23 2015-11-24 Synaptics Incorporated Methods and devices for capacitive image sensing
US9785299B2 (en) 2012-01-03 2017-10-10 Synaptics Incorporated Structures and manufacturing methods for glass covered electronic devices
US9268991B2 (en) 2012-03-27 2016-02-23 Synaptics Incorporated Method of and system for enrolling and matching biometric data
US9251329B2 (en) 2012-03-27 2016-02-02 Synaptics Incorporated Button depress wakeup and wakeup strategy
US9137438B2 (en) 2012-03-27 2015-09-15 Synaptics Incorporated Biometric object sensor and method
US9600709B2 (en) 2012-03-28 2017-03-21 Synaptics Incorporated Methods and systems for enrolling biometric data
US9152838B2 (en) 2012-03-29 2015-10-06 Synaptics Incorporated Fingerprint sensor packagings and methods
EP2958053A1 (en) 2012-04-10 2015-12-23 Idex Asa Biometric sensing
US9162872B2 (en) 2012-09-10 2015-10-20 Invensense, Inc. Pre-molded MEMS device package having conductive column coupled to leadframe and cover
US9665762B2 (en) 2013-01-11 2017-05-30 Synaptics Incorporated Tiered wakeup strategy
US9888283B2 (en) 2013-03-13 2018-02-06 Nagrastar Llc Systems and methods for performing transport I/O
USD758372S1 (en) * 2013-03-13 2016-06-07 Nagrastar Llc Smart card interface
WO2015026288A1 (en) * 2013-08-23 2015-02-26 Fingerprint Cards Ab Connection pads for a fingerprint sensing device
EP3087349A4 (en) 2013-12-27 2017-08-30 BYD Company Limited Capacitance detecting device for fingerprint identification and fingerprint identification apparatus comprising the same
KR20160130747A (ko) 2013-12-30 2016-11-14 비와이디 컴퍼니 리미티드 지문을 검측하기 위한 센서, 지문 식별 장치, 및 지문 검측을 위한 센서의 제어 방법
TWI493187B (zh) * 2014-02-17 2015-07-21 Morevalued Technology Co Let 藉由信號外延結構形成之具有平坦接觸面之生物感測器及其製造方法
US20150296607A1 (en) * 2014-04-11 2015-10-15 Apple Inc. Electronic Device With Flexible Printed Circuit Strain Gauge Sensor
US20150296622A1 (en) * 2014-04-11 2015-10-15 Apple Inc. Flexible Printed Circuit With Semiconductor Strain Gauge
CN104051367A (zh) * 2014-07-01 2014-09-17 苏州晶方半导体科技股份有限公司 指纹识别芯片封装结构和封装方法
USD864968S1 (en) 2015-04-30 2019-10-29 Echostar Technologies L.L.C. Smart card interface
KR102379704B1 (ko) 2015-10-30 2022-03-28 삼성전자주식회사 반도체 패키지
KR20170082358A (ko) * 2016-01-06 2017-07-14 하나 마이크론(주) 스마트 기기의 트랙패드 반도체 패키지 및 그 제조 방법
TW201730809A (zh) * 2016-02-19 2017-09-01 致伸科技股份有限公司 指紋辨識模組及其製造方法
TWI623249B (zh) * 2016-02-23 2018-05-01 致伸科技股份有限公司 指紋辨識模組及其製造方法
US9939920B2 (en) 2016-03-03 2018-04-10 Microsoft Technology Licensing, Llc Keyset fingerprint sensor with backlight
US10248251B2 (en) * 2016-08-16 2019-04-02 Guangdong Oppo Mobile Telecommunications Corp. Method for manufacturing input assembly, input assembly and terminal
KR102528424B1 (ko) * 2016-08-31 2023-05-04 삼성전자주식회사 전자 부품 및 그를 포함하는 전자 장치
US10395164B2 (en) * 2016-12-15 2019-08-27 Fingerprint Cards Ab Fingerprint sensing module and method for manufacturing the fingerprint sensing module
US11610429B2 (en) 2016-12-15 2023-03-21 Fingerprint Cards Anacatum Ip Ab Fingerprint sensing module and method for manufacturing the fingerprint sensing module
TWI604389B (zh) * 2017-01-06 2017-11-01 致伸科技股份有限公司 指紋辨識模組
TWI644601B (zh) * 2017-03-03 2018-12-11 致伸科技股份有限公司 指紋辨識模組的治具及指紋辨識模組的製造方法
CN110300975A (zh) * 2017-03-10 2019-10-01 指纹卡有限公司 包括指纹传感器装置和连接至该传感器装置的基板的指纹传感器模块
CN108962868B (zh) * 2017-05-25 2020-07-03 矽品精密工业股份有限公司 封装结构及其制法
CN109427696B (zh) * 2017-08-25 2020-06-05 致伸科技股份有限公司 指纹感测芯片封装结构
KR102138671B1 (ko) * 2019-05-14 2020-08-11 (주)비티비엘 지문센서부가 개선된 스마트카드
KR20210023195A (ko) * 2019-08-22 2021-03-04 삼성전자주식회사 인쇄 회로 기판을 포함하는 카메라 모듈 및 이를 포함하는 전자 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235650A1 (de) * 1982-09-27 1984-03-29 Philips Patentverwaltung Gmbh, 2000 Hamburg Informationskarte und verfahren zu ihrer herstellung
US5963679A (en) * 1996-01-26 1999-10-05 Harris Corporation Electric field fingerprint sensor apparatus and related methods
US6028773A (en) * 1997-11-14 2000-02-22 Stmicroelectronics, Inc. Packaging for silicon sensors
US5969418A (en) * 1997-12-22 1999-10-19 Ford Motor Company Method of attaching a chip to a flexible substrate
JP2002516439A (ja) * 1998-05-19 2002-06-04 インフィネオン テクノロジース アクチエンゲゼルシャフト 生物測定学的な特徴、特に指紋を検出するためのセンサ装置
US6014066A (en) * 1998-08-17 2000-01-11 Trw Inc. Tented diode shunt RF switch
US6307258B1 (en) * 1998-12-22 2001-10-23 Silicon Bandwidth, Inc. Open-cavity semiconductor die package
JP4222690B2 (ja) * 1999-07-12 2009-02-12 ソニーケミカル＆インフォメーションデバイス株式会社 フレキシブル配線基板素片及び配線シート
EP1085788A3 (en) * 1999-09-14 2003-01-02 Seiko Epson Corporation Composite flexible wiring board, method of manufacturing the same, electro-optical device, and electronic equipment
JP3227444B2 (ja) * 1999-11-10 2001-11-12 ソニーケミカル株式会社 多層構造のフレキシブル配線板とその製造方法
DE10016135A1 (de) * 2000-03-31 2001-10-18 Infineon Technologies Ag Gehäusebaugruppe für ein elektronisches Bauteil
US7049166B2 (en) * 2000-08-17 2006-05-23 Authentec, Inc. Methods and apparatus for making integrated circuit package including opening exposing portion of the IC
US6672174B2 (en) * 2001-07-23 2004-01-06 Fidelica Microsystems, Inc. Fingerprint image capture device with a passive sensor array
US6653723B2 (en) * 2002-03-09 2003-11-25 Fujitsu Limited System for providing an open-cavity low profile encapsulated semiconductor package

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101393898B (zh) * 2007-09-21 2012-04-18 日月光半导体制造股份有限公司 封装结构及其制造方法
CN102087536B (zh) * 2009-12-07 2012-08-08 无锡江南计算技术研究所 刀片装置
CN103748976A (zh) * 2011-08-24 2014-04-23 大陆-特韦斯贸易合伙股份公司及两合公司 具有唯一的电支承件的传感器
CN103748976B (zh) * 2011-08-24 2018-01-02 大陆-特韦斯贸易合伙股份公司及两合公司 具有唯一的电支承件的传感器
CN108495587A (zh) * 2016-01-26 2018-09-04 奈克斯特生物测定学集团公司 具有指纹传感器的柔性卡
CN108495587B (zh) * 2016-01-26 2020-08-11 奈克斯特生物测定学集团公司 具有指纹传感器的柔性卡
CN107437046A (zh) * 2016-05-25 2017-12-05 讯芯电子科技（中山）有限公司 指纹传感器封装结构及其制作方法
CN107437046B (zh) * 2016-05-25 2020-12-01 讯芯电子科技（中山）有限公司 指纹传感器封装结构及其制作方法
CN111344714A (zh) * 2017-09-19 2020-06-26 傲迪司威生物识别公司 适合集成到电子设备中的双面传感器模块
CN108490031A (zh) * 2018-04-02 2018-09-04 中国工程物理研究院激光聚变研究中心 一种柔性气体传感器封装结构及其封装方法
CN108490031B (zh) * 2018-04-02 2024-03-01 中国工程物理研究院激光聚变研究中心 一种柔性气体传感器封装结构及其封装方法

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US6924496B2 (en) 2005-08-02
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