CN1438692A - 半导体布线形成方法及装置、器件制造方法及装置和晶片 - Google Patents
半导体布线形成方法及装置、器件制造方法及装置和晶片 Download PDFInfo
- Publication number
- CN1438692A CN1438692A CN02154277A CN02154277A CN1438692A CN 1438692 A CN1438692 A CN 1438692A CN 02154277 A CN02154277 A CN 02154277A CN 02154277 A CN02154277 A CN 02154277A CN 1438692 A CN1438692 A CN 1438692A
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- Prior art keywords
- mentioned
- semiconductor wires
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- film
- vacuum chamber
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- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 177
- 238000000034 method Methods 0.000 title claims description 60
- 230000015572 biosynthetic process Effects 0.000 title claims description 54
- 239000000463 material Substances 0.000 claims abstract description 170
- 238000001704 evaporation Methods 0.000 claims abstract description 123
- 230000008020 evaporation Effects 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000010949 copper Substances 0.000 claims description 75
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 73
- 229910052802 copper Inorganic materials 0.000 claims description 73
- 239000012528 membrane Substances 0.000 claims description 49
- 230000004888 barrier function Effects 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 28
- 230000005684 electric field Effects 0.000 claims description 19
- 238000010894 electron beam technology Methods 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 238000010891 electric arc Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 89
- 239000010410 layer Substances 0.000 description 54
- 238000007747 plating Methods 0.000 description 13
- 239000011324 bead Substances 0.000 description 12
- 230000009471 action Effects 0.000 description 11
- 238000005498 polishing Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000009499 grossing Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 238000005034 decoration Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 230000005012 migration Effects 0.000 description 4
- 238000013508 migration Methods 0.000 description 4
- 238000000280 densification Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000013036 cure process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 210000003414 extremity Anatomy 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (36)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP383534/2001 | 2001-12-17 | ||
JP2001383534A JP2003188115A (ja) | 2001-12-17 | 2001-12-17 | 半導体配線形成方法及び装置、半導体デバイス製造方法及び装置、並びにウエハ |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1438692A true CN1438692A (zh) | 2003-08-27 |
Family
ID=19187601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02154277A Pending CN1438692A (zh) | 2001-12-17 | 2002-12-17 | 半导体布线形成方法及装置、器件制造方法及装置和晶片 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20030153180A1 (zh) |
EP (1) | EP1325969A3 (zh) |
JP (1) | JP2003188115A (zh) |
KR (1) | KR20030051352A (zh) |
CN (1) | CN1438692A (zh) |
TW (1) | TW200301310A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100404206C (zh) * | 2005-12-08 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 拆装半导体抽真空设备的方法 |
CN102234779A (zh) * | 2010-04-22 | 2011-11-09 | 初星太阳能公司 | 用于将复合半导体高速溅射到大面积基底上的方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7509734B2 (en) * | 2003-03-03 | 2009-03-31 | United Technologies Corporation | Repairing turbine element |
US7216428B2 (en) | 2003-03-03 | 2007-05-15 | United Technologies Corporation | Method for turbine element repairing |
CN101914760B (zh) * | 2003-09-19 | 2012-08-29 | 株式会社日立国际电气 | 半导体装置的制造方法及衬底处理装置 |
US7615132B2 (en) * | 2003-10-17 | 2009-11-10 | Hitachi High-Technologies Corporation | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method |
US20050205415A1 (en) * | 2004-03-19 | 2005-09-22 | Belousov Igor V | Multi-component deposition |
US7404986B2 (en) | 2004-05-07 | 2008-07-29 | United Technologies Corporation | Multi-component deposition |
KR100660136B1 (ko) | 2004-11-05 | 2006-12-21 | 한국전기연구원 | 박막증착장치 |
DE102005025935B4 (de) * | 2005-06-06 | 2007-06-28 | Createc Fischer & Co. Gmbh | Hochtemperatur-Verdampferzelle und Verfahren zur Verdampfung hochschmelzender Materialien |
US7700166B2 (en) * | 2005-06-06 | 2010-04-20 | Createc Fischer & Co. Gmbh | Process for evaporating high-melting materials |
JP4757689B2 (ja) * | 2006-03-31 | 2011-08-24 | 株式会社昭和真空 | 成膜装置及び成膜方法 |
ITBO20060397A1 (it) * | 2006-05-24 | 2007-11-25 | Consiglio Nazionale Ricerche | Macchina per la deposizione automatizzata di materiale mediante un aerografo |
EP1862562A1 (en) * | 2006-05-31 | 2007-12-05 | Mec Company Ltd. | Method for manufacturing substrate, and vapor deposition apparatus used for the same |
KR100831025B1 (ko) * | 2007-07-13 | 2008-05-20 | (주) 세기정밀 | 반도체 부품 표면의 휘스커 발생 방지 장치 |
EP2020454B1 (en) * | 2007-07-27 | 2012-09-05 | Applied Materials, Inc. | Evaporation apparatus with inclined crucible |
JP5342364B2 (ja) * | 2009-08-05 | 2013-11-13 | 新明和工業株式会社 | 給電機構および真空処理装置 |
TW201213595A (en) * | 2010-09-29 | 2012-04-01 | Hon Hai Prec Ind Co Ltd | Coating device |
WO2012060819A1 (en) * | 2010-11-02 | 2012-05-10 | Empire Technology Development Llc | Semiconductor structure with insulated through silicon via |
US20130220546A1 (en) * | 2011-11-09 | 2013-08-29 | Sakti 3, Inc. | High throughput physical vapor deposition apparatus and method for manufacture of solid state batteries |
US9971341B2 (en) | 2014-01-06 | 2018-05-15 | Globalfoundries Inc. | Crystal oscillator and the use thereof in semiconductor fabrication |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63109162A (ja) * | 1986-10-24 | 1988-05-13 | Res Dev Corp Of Japan | イオンプレ−テイング方法とその装置 |
US5322712A (en) * | 1993-05-18 | 1994-06-21 | Air Products And Chemicals, Inc. | Process for improved quality of CVD copper films |
JPH09209128A (ja) * | 1996-01-30 | 1997-08-12 | Puresuteeji:Kk | 蒸発源にレーザを用いたイオンプレーティング装置 |
US5933758A (en) * | 1997-05-12 | 1999-08-03 | Motorola, Inc. | Method for preventing electroplating of copper on an exposed surface at the edge exclusion of a semiconductor wafer |
JP3031301B2 (ja) * | 1997-06-25 | 2000-04-10 | 日本電気株式会社 | 銅配線構造およびその製造方法 |
JP3428865B2 (ja) * | 1997-07-09 | 2003-07-22 | キヤノン株式会社 | 堆積膜の形成装置及び堆積膜形成方法 |
JP3138810B2 (ja) * | 1997-10-31 | 2001-02-26 | 森六株式会社 | イオンプレーティング装置 |
JP3944317B2 (ja) * | 1998-06-09 | 2007-07-11 | 住友重機械工業株式会社 | Cu成膜方法 |
-
2001
- 2001-12-17 JP JP2001383534A patent/JP2003188115A/ja active Pending
-
2002
- 2002-12-12 TW TW091135942A patent/TW200301310A/zh unknown
- 2002-12-16 US US10/320,333 patent/US20030153180A1/en not_active Abandoned
- 2002-12-16 KR KR1020020080513A patent/KR20030051352A/ko not_active Application Discontinuation
- 2002-12-17 CN CN02154277A patent/CN1438692A/zh active Pending
- 2002-12-17 EP EP02258686A patent/EP1325969A3/en not_active Withdrawn
-
2005
- 2005-04-06 US US11/100,285 patent/US20050199983A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100404206C (zh) * | 2005-12-08 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 拆装半导体抽真空设备的方法 |
CN102234779A (zh) * | 2010-04-22 | 2011-11-09 | 初星太阳能公司 | 用于将复合半导体高速溅射到大面积基底上的方法 |
CN102234779B (zh) * | 2010-04-22 | 2015-07-08 | 初星太阳能公司 | 用于将复合半导体高速溅射到大面积基底上的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200301310A (en) | 2003-07-01 |
KR20030051352A (ko) | 2003-06-25 |
EP1325969A3 (en) | 2003-08-06 |
JP2003188115A (ja) | 2003-07-04 |
US20050199983A1 (en) | 2005-09-15 |
EP1325969A2 (en) | 2003-07-09 |
US20030153180A1 (en) | 2003-08-14 |
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