CN1432075A - 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置 - Google Patents

用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置 Download PDF

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Publication number
CN1432075A
CN1432075A CN01810286A CN01810286A CN1432075A CN 1432075 A CN1432075 A CN 1432075A CN 01810286 A CN01810286 A CN 01810286A CN 01810286 A CN01810286 A CN 01810286A CN 1432075 A CN1432075 A CN 1432075A
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CN
China
Prior art keywords
feeder sleeve
arsenic
melt
silicon melt
silicon
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Pending
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CN01810286A
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English (en)
Chinese (zh)
Inventor
C·F·切尔科
M·巴纳
M·库尔卡尼
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SunEdison Inc
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SunEdison Inc
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Publication of CN1432075A publication Critical patent/CN1432075A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN01810286A 2000-05-10 2001-04-04 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置 Pending CN1432075A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56835600A 2000-05-10 2000-05-10
US09/568,356 2000-05-10

Publications (1)

Publication Number Publication Date
CN1432075A true CN1432075A (zh) 2003-07-23

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Family Applications (1)

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CN01810286A Pending CN1432075A (zh) 2000-05-10 2001-04-04 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置

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Country Link
EP (1) EP1282733A1 (de)
JP (1) JP2003532611A (de)
KR (1) KR20030015239A (de)
CN (1) CN1432075A (de)
WO (1) WO2001086033A1 (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100348783C (zh) * 2004-03-29 2007-11-14 科发伦材料株式会社 直拉单晶硅用砷掺杂剂及其制造方法及单晶硅的制造方法
CN101173368B (zh) * 2006-10-30 2010-09-29 北京有色金属研究总院 在晶体生长过程中具有熔体掺杂功能的晶体生长装置
CN103160912A (zh) * 2011-12-08 2013-06-19 有研半导体材料股份有限公司 一种掺杂区熔单晶的制备工艺
CN104711675A (zh) * 2015-02-16 2015-06-17 浙江金瑞泓科技股份有限公司 磷砷锑共掺杂的n型重掺直拉硅单晶及其硅外延片
CN105026622A (zh) * 2012-12-31 2015-11-04 Memc电子材料有限公司 用于单晶半导体材料的受控掺杂的液体掺杂系统和方法
CN105369346A (zh) * 2015-12-09 2016-03-02 天津市环欧半导体材料技术有限公司 一种直拉重掺砷低电阻硅单晶的装置
TWI815015B (zh) * 2019-06-28 2023-09-11 環球晶圓股份有限公司 使用固相摻雜物之拉錠器設備

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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US7132091B2 (en) 2001-09-28 2006-11-07 Memc Electronic Materials, Inc. Single crystal silicon ingot having a high arsenic concentration
KR100486877B1 (ko) * 2002-10-15 2005-05-03 주식회사 실트론 저융점 도판트 주입관이 설치된 실리콘 단결정 성장 장치및 저융점 도판트 주입 방법
KR100485663B1 (ko) * 2002-11-25 2005-04-27 주식회사 실트론 실리콘 단결정 잉곳의 성장 장치
KR100777337B1 (ko) * 2006-05-24 2007-11-28 요업기술원 실리콘 단결정 잉고트의 제조방법
KR100777336B1 (ko) * 2006-05-24 2007-11-28 요업기술원 실리콘 단결정 잉고트의 제조장치
KR100777335B1 (ko) * 2006-05-24 2007-11-28 요업기술원 실리콘 단결정 잉고트의 제조방법
DE112008000893B8 (de) 2007-04-24 2022-02-24 Sumco Techxiv Corp. Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot
JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
JP5270996B2 (ja) 2008-07-30 2013-08-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
JP5462479B2 (ja) * 2008-12-17 2014-04-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
JP5226496B2 (ja) * 2008-12-17 2013-07-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
JP5410086B2 (ja) * 2008-12-19 2014-02-05 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
JP5144546B2 (ja) * 2009-01-14 2013-02-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
US8535439B2 (en) 2009-01-14 2013-09-17 Sumco Techxiv Corporation Manufacturing method for silicon single crystal
JP6317374B2 (ja) 2013-03-15 2018-04-25 エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニＭＥＭＣ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ， ＳｐＡ 半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム
WO2016142893A1 (en) 2015-03-10 2016-09-15 Sunedison Semiconductor Limited Liquid doping systems and methods for controlled doping of a melt
KR102576016B1 (ko) * 2018-12-14 2023-09-06 글로벌웨이퍼스 씨오., 엘티디. 고체 도펀트를 승화시키기 위한 다공성 파티션 부재와 함께 도핑 도관을 포함하는 잉곳 풀러 장치
US11028499B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
US11028500B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
US11795569B2 (en) * 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant
US11866844B2 (en) * 2020-12-31 2024-01-09 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using a vaporized dopant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542867A1 (de) * 1975-09-25 1977-03-31 Wacker Chemitronic Verfahren zur herstellung von halbleitereinkristallen mit einstellbarer dotierstoffkonzentration
JPS606920B2 (ja) * 1982-11-12 1985-02-21 工業技術院長 ガリウム砒素単結晶製造装置
JPS59156993A (ja) * 1983-02-23 1984-09-06 Komatsu Denshi Kinzoku Kk Ｃｚ単結晶のド−プ方法およびその装置
FR2628445B1 (fr) * 1988-03-11 1990-11-09 Thomson Hybrides Microondes Dispositif de synthese et tirage de materiaux iii-v, sous basse pression et procede mettant en oeuvre ce dispositif
AU6264198A (en) * 1997-02-06 1998-08-26 Crysteco, Inc. Method and apparatus for growing crystals
US6019838A (en) * 1998-01-05 2000-02-01 Memc Electronic Materials, Inc. Crystal growing apparatus with melt-doping facility

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100348783C (zh) * 2004-03-29 2007-11-14 科发伦材料株式会社 直拉单晶硅用砷掺杂剂及其制造方法及单晶硅的制造方法
CN101173368B (zh) * 2006-10-30 2010-09-29 北京有色金属研究总院 在晶体生长过程中具有熔体掺杂功能的晶体生长装置
CN103160912A (zh) * 2011-12-08 2013-06-19 有研半导体材料股份有限公司 一种掺杂区熔单晶的制备工艺
CN103160912B (zh) * 2011-12-08 2015-11-11 有研半导体材料有限公司 一种掺杂区熔单晶的制备工艺
CN105026622A (zh) * 2012-12-31 2015-11-04 Memc电子材料有限公司 用于单晶半导体材料的受控掺杂的液体掺杂系统和方法
CN105026622B (zh) * 2012-12-31 2018-02-02 Memc电子材料有限公司 用于单晶半导体材料的受控掺杂的液体掺杂系统和方法
CN104711675A (zh) * 2015-02-16 2015-06-17 浙江金瑞泓科技股份有限公司 磷砷锑共掺杂的n型重掺直拉硅单晶及其硅外延片
CN104711675B (zh) * 2015-02-16 2017-11-10 浙江金瑞泓科技股份有限公司 磷砷锑共掺杂的n型重掺直拉硅单晶及其硅外延片
CN105369346A (zh) * 2015-12-09 2016-03-02 天津市环欧半导体材料技术有限公司 一种直拉重掺砷低电阻硅单晶的装置
TWI815015B (zh) * 2019-06-28 2023-09-11 環球晶圓股份有限公司 使用固相摻雜物之拉錠器設備

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Publication number Publication date
KR20030015239A (ko) 2003-02-20
JP2003532611A (ja) 2003-11-05
EP1282733A1 (de) 2003-02-12
WO2001086033A1 (en) 2001-11-15

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