CN1432075A - Method and device for feeding arsenic dopant into silicon crystal growing process - Google Patents
Method and device for feeding arsenic dopant into silicon crystal growing process Download PDFInfo
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- CN1432075A CN1432075A CN01810286A CN01810286A CN1432075A CN 1432075 A CN1432075 A CN 1432075A CN 01810286 A CN01810286 A CN 01810286A CN 01810286 A CN01810286 A CN 01810286A CN 1432075 A CN1432075 A CN 1432075A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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Abstract
In a silicon crystal growing machine an arsenic dopant is introduced into the silicon melt through a sealed feeding tube with an open end submerged below the silicon melt surface. The arsenic vapor generated is then introduced into the silicon melt volume directly with minimal arsenic vapor loss within the crystal grower volume above the silicon melt. The dopant feeding tube can be constructed either as an assembly that is attached to the crystal grower seed chuck and is lowered into the silicon melt using the seed chuck drive mechanism, or as a separate assembly that can be extended or retracted from the silicon melt through an access port in the crystal grower chamber wall above the silicon melt surface.
Description
Background of invention
The present invention relates to a kind of device that is used for arsenic dopant is added silicon crystal growing process.
In the silicon crystal process of growth of utilizing vertical pulling method (Czochralski method), the feature of the silicon ingot of being grown and character can change in the silicon of fusing by added minor dopant material before the silicon ingot growth.The dopant material that is used for this purpose is an arsenic.The problem that is run into when attempting to add the arsenic dopant material in the silicon melt is that in the silicon crystal grower, arsenic will be vaporized into gas phase from solid at 612 ℃ near vacuum state the time.If the mouth of arsenic dopant from the crystal grower of silicon melt top falls into the silicon of fusing, then most of arsenic will just vaporize before it arrives the silicon melt surface and is absorbed in the silicon of fusing and lose.
Brief summary of the invention
The present invention has overcome above-mentioned and this prior art relevant difficulty and shortcoming by with a kind of sealed feeder sleeve arsenic dopant being added in the silicon melt, and above-mentioned sealed feeder sleeve has an opening end, this opening end immerse the silicon melt surface below.Then the arsenic steam that is produced is directly added in the silicon melt volume, make arsenic vapor losses in the crystal grower volume above silicon melt for minimum.The doping agent feeder sleeve can or be made an assembly, this assembly is connected on the crystal grower seed chuck, and utilize the seed chuck driving mechanism in transferring to silicon melt, or make an assembly that separates, being somebody's turn to do assembly separately can stretch out in silicon melt or therefrom withdrawal by one in the crystal grower locular wall of silicon melt surface feeding mouth.
By with feeder sleeve assembly upside down turn, so that the lower aperture end of assembly is up, the arsenic dopant of packing into.Then arsenic dopant is poured into the doline end of assembly opening, so as it can be full of this assembly inner gland chamber top half.After the arsenic dopant of aequum is put into assembly, and then the runner assembly that faces up very carefully, so that assembly is got back to its original orientation, promptly the funnel end of opening is down.Therefore arsenic dopant will be arranged in below the sealing chamber of pipe half.Silicon in crystal grower was finished after its fusion stage and whole fusing, close the segregaion valve on the crystal grower, and pump gas made reception chamber get back to environment (atmosphere) pressure.Can allow the entrance door that leads to reception chamber open like this.Then doping agent feeder sleeve assembly is connected on the crystal grower seed chuck, and closes the entrance door that leads to reception chamber.Then with the reception chamber pumped down to technology vacuum tightness (being the 14-28 torr under the argon purge situation), and open the crystal grower segregaion valve.Then the doping agent feeder sleeve assembly of seed chuck and connection towards the silicon melt surface direction to transferring.
Because this assembly is transferred in the interior silicon melt of crystal grower, so the length of doping agent feeder sleeve assembly is selected like this, during with the opening end of convenient assembly contact melt, arsenic dopant in the assembly just in time advances to a vertical position in the environment of crystal grower hot-zone, just reaches its 612 ℃ of vaporization temperatures at this position arsenic dopant.Then the opening end of doping agent feeder sleeve assembly is immersed a fixed predetermined distance, transfer to now in the environment of crystal grower hot-zone so that the whole sealing chamber of arsenic dopant is housed, therefore whole sealing chamber is under 612 ℃ or higher temperature.Arsenic dopant is vaporized fully, and arsenic steam is because its pressure surpass the vacuum tightness in the crystal grower, so be diffused into the central canal in the feeder sleeve assembly now downwards.Steam arrives silicon melt, and here it is absorbed by silicon melt and gives the silicon ingot that grows out desirable characteristic from silicon melt.After whole arsenic dopants are all vaporized and are transported to silicon melt, from silicon melt, withdraw from doping agent feeder sleeve assembly then, till this assembly and seed chuck turn back in the reception chamber.Close the segregaion valve on the crystal grower then, then with the reception chamber pump to environment (atmosphere) pressure.Open the reception chamber door then and take out doping agent feeder sleeve assembly.Then a silicon seed is installed in the seed chuck, and closes the reception chamber door.Then with the reception chamber pumped down to vacuum (being the 14-28 torr under the argon purge situation), open the crystal grower segregaion valve, and the beginning crystal growth technique.
The improvement of doping agent feeder sleeve assembly comprises a near endless member that is placed in the feeder sleeve lower end.The purposes of these parts provides a visual indicator, when immersing a fixed predetermined distance with the end of convenient assembly, so that be under the sufficiently high temperature near the whole sealing chamber at assembly top, arsenic dopant is vaporized fully.Doping agent feeder sleeve assembly is transferred in the melt, until endless member become just immerse the silicon melt lower face till.
Also have another kind of alternative design to replace endless member in this field, this design comprises a disk or barrier, and this disk or barrier are fixed near the lower end of doping agent feeder sleeve assembly.Assembly is transferred in the silicon melt, until disk or barrier or just contact the silicon melt surface, or till when just immersing the silicon melt lower face.Opposite with endless member, the purposes of disk or barrier relates to any arsenic steam after it leaves the opening end of feeder sleeve assembly and before being absorbed by silicon melt fully, and the arsenic steam that injects silicon melt will pass melt " bubbling " up.Disk or barrier will be used for blocking the silicon melt free surface, are used for a quite big distance around the feeder sleeve assembly, and before steam can be advanced further and move to any free silicon face, arsenic steam are trapped in the melt.This gives steam the time that is more absorbed by silicon melt.
With in each crystal ingot process of growth, adopting the doping agent supply assembly is connected to differently with the mode that unloads from the crystal grower seed chuck on the crystal grower seed chuck be, also can enter the silicon melt surface with the feeding mouth that similar feeder sleeve assembly can pass on the crystal grower, this feeding mouth is used for doping agent is added in the silicon ingot growth technique.In this case, doping agent feeder sleeve assembly is mounted to the part of a slide assemblies, this slide assemblies can stretch or shrink the doping agent feeder sleeve.In order to keep vacuum-sealing, the stretching, extension of feeder sleeve assembly and contractile motion are sealed, preferably use metallic bellows (bellows) sealing.The actuating of feeder sleeve slide assemblies can perhaps can drive by a fractional motor with manually carrying out.After the silicon fusing in crystal grower, doping agent feeder sleeve assembly is stretched out downwards by feeding mouth, be deep into the next fixed predetermined depth in silicon melt surface until the lower end of feeder sleeve opening.After in silicon melt is immersed in the lower end of doping agent feeder sleeve assembly, make arsenic dopant then in falling into feeder sleeve, when restrictor in it runs into feeder sleeve or baffle plate till.When doping agent arrived restrictor or baffle plate, it was in a position of crystal grower inside now, and here envrionment temperature substantially exceeds arsenic near the vaporization temperature under the vacuum state (14-28 torr).Arsenic steam is downwards towards feeder sleeve then, and is the same just as the scheme of installing with seed chuck in this invention, makes arsenic steam directly inject silicon melt.After arsenic dopant steam is absorbed by silicon melt, again doping agent feeder sleeve assembly is extracted out from silicon melt, till the position until the lower open end of feeder sleeve assembly returns the feeding mouth of just opening in crystal grower below.
This doping agent feeder sleeve assembly can pass that feeding mouth on the crystal grower stretches out and the advantage of second kind of scheme of withdrawing is, the silicon ingot growth technique needn't stop for opening crystal grower and the feeder sleeve assembly being installed on the seed chuck, also needn't stop this technology again with the installation silicon seed for take out the doping agent feeder sleeve assembly of using up from seed chuck then.Another advantage of this scheme is, though feeder sleeve extended to go deep into the silicon melt surface after, arsenic dopant also can be stored in the container of the outside feeder sleeve upper end of crystal grower.Before the hypomere that falls into the feeder sleeve assembly, the vaporization of arsenic does not take place at doping agent.Under the situation of the doping agent feeder sleeve assembly of installing with seed chuck, assembly with the seed chuck pulling rope driving mechanism in transferring to silicon melt, the lower open end of feeder sleeve fully deeply with immerse in the silicon melt fully before, may begin to take place some vaporization of arsenic.
To the change of all above-mentioned feeder sleeve assemblies, as the solution of arsenic dopant being injected silicon melt under minimum doping agent damaed cordition, feeder sleeve is preferably made with clear fused-quartz.Clear fused-quartz after the feeder sleeve assembly is extracted out from silicon melt, immerses the silicon of those feeder sleeve surface adhesion minute quantities in the silicon melt, is easy to keep cleaner.Yet, surpass certain hour, some clear fused-quartz glass surface wherein, particularly those surfaces that directly contact with silicon melt, also attenuation will suffer erosion.Therefore, no matter be to use the doping agent feeder sleeve assembly of installing with seed chuck, also be to use the doping agent feeder sleeve assembly that is activated by slide assemblies, the actual feeder sleeve assembly that contacts with silicon melt all will have the limited life-span, and will need periodic replacement.
Other purposes and a characteristics part will be conspicuous, and a part will be pointed out in the back.
Brief description
Fig. 1 is the part sectioned view of crystal grower furnace chamber;
Fig. 2 is the skeleton view of first embodiment of doping agent feeder sleeve assembly of the present invention;
Fig. 3 is the sectional view of Fig. 2 embodiment;
Fig. 4 is the skeleton view of second embodiment of doping agent feeder sleeve assembly of the present invention;
Fig. 5 is the sectional view of Fig. 4 embodiment;
Fig. 6 is the crystal grower furnace chamber part sectioned view with a feeder sleeve assembly, and this feeder sleeve assembly is installed to according on the slip control type feeding device of the present invention;
Fig. 7 is the sectional view of doping agent feeder sleeve assembly the 3rd embodiment of the present invention; With
Fig. 8 is the sectional view of another embodiment of doping agent feeder sleeve assembly of the present invention.
Corresponding title is represented corresponding parts in institute's drawings attached.
Preferred embodiment describes in detail
Illustrate the several embodiment that are used for arsenic dopant feeder sleeve assembly.Fig. 2 and 3 illustrates the first embodiment of the present invention.Assembly 10 is welded and the fusion technique manufacturing with quartzy by clear fused-quartz fully.Although when making this assembly, can not stain and nonreactive refractory materials arsenic, silicon and graphite with other, but clear fused-quartz is a preferable material, because clear fused-quartz can allow the arsenic dopant in the visual observation assembly and arsenic is vaporized and the situation of injection silicon melt.The primary member of this assembly is a kind of heavy wall formula clear fused-quartz pipe 11, and it is that 25mm, wall thickness are that 3mm and length are 475mm that this silica tube 11 has external diameter.The lower end 12 of silica tube 11 expands outwardly, so that form doline (toroidal) geometrical shape, this shape helps in the arsenic dopant material plug-in package.On the silica tube surface of distance flared end 12 about 125mm, an annular projection 14 is set.This annular projection 14 is used for the opening end 12 of visual definite assembly and has immersed fixing and predetermined degree of depth of silicon melt lower face, and this solution surface is shown in Figure 1 to be label 16.It is 12mm that the opposite ends 18 of this silica tube narrows down to a less external diameter, and should have length than small outer-diametric portion is 61mm.
Welding and what be fused to 25mm diameter silica tube upper end is the big and second short clear fused-quartz pipe 20 of length of a diameter, it is 44mm that this second silica tube 20 has external diameter, wall thickness is that 3mm and length are 150mm.With these upper end 22 sealings than the quartzy pipeline section of major diameter, the top end at assembly 10 forms a closed chamber 24 like this.As shown in Figure 2, the square clear fused-quartz rod 26 of one section weak point welds and is fused on the top surface of the assembly of finishing 10.Also a little breach or plate 28 are added on the square quartz pushrod 26, it is such to make this thrust play a seed crystal, and on the seed chuck that can be assembled to doping agent feeder sleeve assembly 10 in the Hamco crystal grower.Should also be noted that the joint between the upper end of the seed crystal that guarantees resemble the thrust and pipe fitting closure is firm, and the big fillet of low-stress formula with 8mm radius is added on this joint.
The operation of this arsenic dopant feeder sleeve assembly 10 is as follows.At first handle component rotates 180 ° end to end reversedly from erect position shown in its Fig. 2, so that the expansion of assembly and opening end are towards the top.In this position, can pour into by the opening end 12 of assembly 10 up to 200g granular solids arsenic dopant material, in it is deposited in by the formed enclosed chamber 24 of 44mm diameter silica tube till.After feeder sleeve assembly 10 is put in whole chargings of arsenic dopant, with this assembly slowly and carefully Rotate 180 ° get back to its original erect position as shown in Figure 2.At this moment, the granular arsenic dopant material of solid will be deposited in the lower end of 44mm diameter silica tube closed cavities or chamber, so that it is contained between the outer wall of pipeline section 18 of the inwall of outer tube 20 and 12mm reduced.Loaded now under the arsenic dopant situation at feeder sleeve assembly 10, it is ready in the crystal grower 30 that is installed to shown in Fig. 1 now.Crystal grower 30 can be a kind of 15 inches Hamco crystal grower (model is CG2000 RC-30), but suitably regulating under the size situation of feeder sleeve assembly 10, also can use other crystal grower.Hamco is a department that is positioned at the Kayex of New York Rochester.
In crystal grower 30, finish after the fusing of silicon charging, close the segregaion valve (not shown) on the crystal grower 30, and make reception chamber 32 reach the atmospheric condition of environment, so that can open the entrance door 34 of reception chamber.The feeder sleeve assembly 10 of arsenic dopant will be housed then, use the mode identical, be assembled on the crystal grower seed chuck assembly (not shown) with standard construction with silicon seed is installed.Feeder sleeve assembly 10 is suspended on the seed chuck assembly facing to the below with feeder sleeve assembly 10 flared lower ends 12 now.Close crystal grower reception chamber door 34 now, reception chamber is bled so that consistent, and open segregaion valve with the vacuum of burner hearth inside (under the argon purge situation, being the 14-28 torr).
Utilize the seed chuck feed drive unit that feeder sleeve assembly 10 is transferred on the silicon melt surface now.When the flared end 12 of feeder sleeve assembly 10 arrives bath surface 16, be positioned at arsenic dopant near the place, 44mm diameter enclosed chamber bottom at assembly 10 tops, will be positioned at about 285mm place, 16 tops, silicon melt surface.Utilize remote multi-path accessing computer (MARC) (a kind of in this technology well-known nonlinear finite element model software) thermal modelization to analyze design in the hot-zone that the present invention is being used for this purpose, arsenic dopant material at this place, 24 bottoms, chamber will be warmed up to and be higher than 612 ℃ temperature, and will begin vaporization.At this moment, feeder sleeve assembly 10 is further transferred in the silicon melt, the ring 14 in silica tube 11 contacts with silicon melt surface 16, has also promptly stretched into 125mm again downwards.At this moment, the whole closed volume in the quartzy pipeline section of the 44mm of assembly 10 diameter sufficiently drops in the hot-zone of crystal puller now, so that its temperature promptly surpasses the vaporization temperature of arsenic dopant now above 612 ℃.Arsenic dopant steam is full of chamber 24 now, and leads to the pipe 11 of the 25mm diameter in the feeder sleeve assembly 10 downwards, immerses the silicon melt at end place below it arrives assembly.In case arsenic steam arrives the volume of silicon melt, it just is absorbed in the silicon melt, therefore gives and treat desired feature of the silicon ingot of growing and quality from this silicon melt.Because the volume in this doping process process in the feeder sleeve assembly 10 and the internal volume of crystal grower are isolated, thus have only minimum arsenic dopant loss and discharge crystal grower, and most of arsenic dopant is absorbed by silicon melt.
After arsenic dopant had been vaporized and absorbed in the silicon melt, feeder sleeve assembly 10 was upwards drawn back the disengaging melt volume, and returned in the reception chamber 32 on the crystal grower.At this moment, close the segregaion valve of crystal grower 30, and get back to ambient atmospheric conditions for reception chamber 32 pump gas, can allow to open reception chamber door 34 like this.From the seed chuck assembly, take off arsenic dopant feeder sleeve assembly 10 then, and silicon seed is installed in the seed chuck assembly.Close reception chamber door 34, reception chamber 32 is vacuumized, and open the crystal grower segregaion valve.Crystal grower can carry out silicon ingot growth technique process now, and silicon melt is doped to now has desired arsenic dopant concentration.In view of the hypertoxic character of arsenic, so during this technology, should always take suitable security measures.
Alternative embodiment of the present invention is shown in the Figure 4 and 5.In this embodiment, ring 14 a usefulness disk 40 that is provided with for 125mm apart from the lower end 12 of doping agent feeder sleeve assembly 10 replaces, and these disk 40 usefulness clear fused-quartzs are made, and disk 40 welds also and is fused on the feeder sleeve.In this embodiment, this disk 40 thick for 5mm and diameter be 150mm.The operation of the operation of this embodiment and Fig. 2 and 3 illustrated embodiments much at one, and this disc-shaped part and annular element play same function.In these two embodiment, the end of feeder sleeve assembly all immerses in the melt.
Be ring 14 among Fig. 2 and 3 or the disk 40 in the Figure 4 and 5 when contacting bath surface 16 when no matter, the end 12 of feeder sleeve assembly all immerses fixed required separation distance in the silicon melt, is used for the correct vaporization of arsenic dopant and it absorption at silicon melt.Yet disk 40 as shown in Figures 4 and 5 also plays an additional effect.When arsenic steam when the immersion end 12 of feeder sleeve assembly 10 is discharged into the silicon melt, arsenic steam can be around " bubbling " (bubbling) on the outer radial of feeder sleeve assembly 10, and arrives silicon melt surface 16 before it is absorbed in the silicon melt.If arsenic steam arrived bath surface before absorbing, then arsenic steam may be emitted from bath surface, and arsenic dopant may be lost.By disk 40 being placed on the feeder sleeve assembly 10 and disk 40 being placed on bath surface 16 places, disk 40 will play a kind of barrier or blocking layer (baffle plate) effect.The arsenic steam at any arrival bath surface 16 places all will be blocked by disk 40, and the one section longer distance of being forced to advance before it can overflow bath surface just arrives on the external diameter of disk 40.This will force arsenic steam to spend the more time in melt, allow more arsenic dopant be absorbed by silicon melt simultaneously.
Another alternative embodiment of the present invention is shown in Figure 6.In this embodiment, feeder sleeve assembly 50 is fixed on the mechanical slide assemblies 52, and this machinery slide assemblies 52 is installed in the outside of crystal growing furnace 30.For this reason, adopt the doping agent on stove 30 transition sections that are arranged at present on the Hamco minor diameter crystal grower to feed mouth 54.Machinery slide assemblies 52 is assembled to this with attached feeder sleeve assembly 50 and feeds on the mouth 54, enters stove 30 so that feeding mouth 54 can be run through in the lower end 56 of feeder sleeve assembly 50, and the lower end 56 of feeder sleeve assembly 50 is immersed in the silicon melt.
With the foregoing description arsenic dopant be placed on be assembled on the seed chuck in the feeder sleeve assembly and in crystal grower different, originally arsenic dopant puts into same Hamco tubular assembly, and this tubular assembly is used for that normally doping agent is fed mouth 54 by doping agent and is added on the Hamco minor diameter crystal grower.Then this doping agent wound packages is fitted on mechanical slide assemblies 52 and the feeder sleeve assembly 50.This can finish when crystal grower superposes and loads onto chunk polysilicon before the beginning crystal growing process.Begin and after the fusion stage finishes in process, feeder sleeve assembly 50 is extended through feed mouthfuls 54 and the lower end 56 of feeder sleeve assembly 50 immersed in the silicon melts again.Present doping agent cartridge module 57 has a valve, and this valve can be opened at this moment, so that doping agent is put into feeder sleeve 50 downwards, doping agent will be vaporized herein, be absorbed in the silicon melt then.Under this design conditions, can provide argon purge by accessory 59, this accessory 59 will allow argon gas stream pass the doping agent tube and pass feeder sleeve assembly 50, so that guarantee these parts when finishing the melt-doping process, remove any arsenic dopant that stays fully.
Fig. 7 and 8 is the views as two embodiment of the end of the feeder sleeve assembly 50 that uses in assembly shown in Figure 6.In the embodiment shown in fig. 7, near the end 56 of feeder sleeve assembly, lay a filter screen or baffle plate 58.When arsenic dopant during along feeder sleeve assembly 50 landing, it is blocked and rests on filter screen or the baffle plate 58.Now arsenic is that it will be vaporized herein in the hot-zone in thermal zone.This hot-zone constitutes one of them part of the chamber that the granular solids doping agent of transferring in the growth room is housed.Arsenic steam can be by some apertures 60 in filter screen or the baffle plate 58 then, and these apertures 60 are too little, so that can not allow granular solids arsenic particle pass through.Then arsenic steam is injected silicon melt, arsenic is absorbed as mentioned above in silicon melt.In the embodiment of Fig. 8, the small diameter pipeline 62 of filter screen or one section weak point of baffle plate 58 usefulness replaces, and this pipeline 62 is as an isocon (bypass pipe).When adding solid arsenic, its falls through the upper end 64 of isocon 62 openings, and rests on the shelf 66 that just in time is positioned at isocon inlet below, and this shelf 66 closes the feeder sleeve assembly, has only an aperture to aim at the lower end 68 of feeder sleeve assembly.When arsenic was vaporized, arsenic steam can pass re-injection feeder sleeve assembly 50 isocon 62 then and overflow, and passes its lower end 68 and arrives silicon melt.In Fig. 7 and 8 two embodiment, can add argon purge, so that whole arsenic steam are driven in the silicon melt.
When introducing the element of the present invention or the embodiment of the invention, article " ", " a kind of ", " being somebody's turn to do " and " described " regulation meaning have been meant one or more elements.Term " comprises ", " comprising " and " having " be defined as and comprise and look like and be meant that except the element of enumerating additional element can also be arranged.
In view of the foregoing, as can be seen, several purposes of the present invention have all reached, and obtain other favourable results.
Without departing from the present invention, above-mentioned structure and method can be carried out various changes, that comprised in the above description all will be interpreted as it is illustrative with all items shown in the accompanying drawing, and hard-core meaning.
Claims (26)
1. feeder sleeve assembly that is used for a kind of doping agent is supplied to silicon melt in the crystal grower, it comprises:
An elongated feeder sleeve, this feeder sleeve have the upper end of an opening and the lower end of an opening;
An enclosed chamber, this enclosed chamber center on and the upper end of sealing feeder sleeve opening is provided with, and are formed on the doping agent solid material of the predetermined amount of wherein packing into;
This indoor enough distance is stretched in the upper end of feeder sleeve opening, and when being arranged to be in erect position with convenient feeder sleeve, the doping agent granular solids material of predetermined amount is below the feeder sleeve upper end.
2. feeder sleeve assembly according to claim 1 is characterized in that: the upper end portion of the upper end of contiguous its opening of feeder sleeve has the diameter that reduces from the feeder sleeve major portion.
3. feeder sleeve assembly according to claim 1 is characterized in that: the end portion of the lower end of contiguous its opening of feeder sleeve has the diameter bigger than feeder sleeve major portion.
4. feeding assembly according to claim 3 is characterized in that: this end portion is a doline.
5. feeder sleeve assembly according to claim 1, it is characterized in that: the length of doping agent feeder sleeve assembly is selected to, when the surface of the silicon melt in the following end in contact crystal chamber of feeder sleeve opening, the indoor granular solids arsenic dopant of feeder sleeve of sealing is arranged on an indoor position of crystal growth, reaches its vaporization temperature at least at this position arsenic dopant.
6. feeding assembly according to claim 1 is characterized in that comprising a ring, and this ring is connected on the feeder sleeve with one heart, predetermined distance apart from the feeder sleeve lower end.
7. feeder sleeve according to claim 1 is characterized in that comprising a disk, and this disk is connected on the feeder sleeve with one heart, predetermined distance apart from the feeder sleeve lower end.
8. feeder sleeve according to claim 7 is characterized in that: this disk has enough diameters, when being arranged on the bath surface with convenient disk, in case the arsenic dopant of vaporization was overflowed from melt before being absorbed by melt.
9. feeder sleeve according to claim 1 is characterized in that: it is made with quartzy.
10. method that is used for arsenic dopant is supplied to silicon crystal growth machine silicon melt, above-mentioned crystal growth machine comprises a crystal growing chamber, this method may further comprise the steps:
The granular solids arsenic dopant of predetermined amount is put into one be connected to an enclosed chamber on the feeder sleeve, when feeder sleeve was in erect position, the upper end of the opening of feeder sleeve was positioned at the top of granular solids arsenic dopant;
The lower aperture end of feeder sleeve is transferred in the silicon melt, so that it is below bath surface, and the enclosed chamber that granular solids arsenic will be housed transfers in the crystal growing chamber, so that make the vaporization of granular solids arsenic, and enters in the melt by feeder sleeve.
11. method according to claim 10 is characterized in that: feeder sleeve is provided with a fathometer indicator at tube exterior, is used for when telltale is in bath surface, with the degree of depth of visual definite pipe in melt.
12. method according to claim 11 is characterized in that: telltale is a disk that is connected to one heart on the feeder sleeve.
13. method according to claim 12 is characterized in that: disk has enough diameters, in case the arsenic dopant of vaporization was overflowed from melt before being absorbed by melt.
14. method according to claim 13 is characterized in that: disk diameter is at least about 150mm.
15. method according to claim 11 is characterized in that: telltale is a ring that is connected to the feeder sleeve outside with one heart.
16. method according to claim 10 is characterized in that: the lower end of feeder sleeve opening is a doline.
17. a method that is used for arsenic dopant is supplied to a silicon melt in the silicon crystal growth machine, this silicon crystal growth machine comprises a crystal growing chamber, and this method may further comprise the steps:
The granular solids arsenic dopant of predetermined amount is put into a upper chambers of a feeder sleeve assembly that is communicated with a feeder sleeve, this upper chambers has the upper end of a sealing;
The lower aperture end of feeder sleeve is transferred in the silicon melt, so that it is positioned at the below of bath surface, and at least a portion that the chamber of granular solids arsenic dopant will be housed transfers in the crystal growing chamber, so that make the vaporization of granular solids arsenic, and enters melt by feeder sleeve.
18. method according to claim 17 is characterized in that, this is put into step and comprises:
The granular solids arsenic dopant of predetermined amount is put into an enclosed chamber that is connected on the feeder sleeve, when feeder sleeve is in erectility, make the upper end of feeder sleeve opening be positioned at the top of granular solids arsenic dopant.
19. method according to claim 17 is characterized in that, this is put into step and comprises:
The granular solids arsenic dopant of predetermined amount is placed in this chamber that is connected on the feeder sleeve on the baffle plate, the downside of baffle plate is communicated with the lower end of feeder sleeve.
20. method according to claim 17 is characterized in that: feeder sleeve is used for when telltale is in the bath surface place at fathometer indicator of outer setting of pipe, with the degree of depth of visual definite feeder sleeve in melt.
21. method according to claim 20 is characterized in that: telltale is a disk that is connected to one heart on the feeder sleeve.
22. method according to claim 21 is characterized in that: disk has enough diameters, so that the arsenic of anti-devaporation was overflowed from melt before being absorbed by melt.
23. method according to claim 22 is characterized in that: disk diameter is about 150mm.
24. method according to claim 20 is characterized in that: telltale is a ring that is connected to the feeder sleeve outside with one heart.
25. method according to claim 17 is characterized in that: the lower end of feeder sleeve opening is a doline.
26. a method that is used for arsenic dopant is supplied to the silicon melt in the silicon crystal growth machine, this crystal growth machine comprises a crystal growing chamber, and this method may further comprise the steps:
A doping agent feeder sleeve is set, and this doping agent feeder sleeve has top opening end and baffle plate that is positioned at wherein of a lower aperture end and a sealing;
The lower aperture end of feeder sleeve is transferred in the silicon melt,, and made baffle plate in a hot-zone of crystal growth machine so that it is below bath surface;
The granular solids arsenic dopant of predetermined amount is placed on the baffle plate,, and enters melt by the lower aperture end of feeder sleeve so that make the vaporization of granular solids arsenic.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56835600A | 2000-05-10 | 2000-05-10 | |
| US09/568,356 | 2000-05-10 |
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| Publication Number | Publication Date |
|---|---|
| CN1432075A true CN1432075A (en) | 2003-07-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01810286A Pending CN1432075A (en) | 2000-05-10 | 2001-04-04 | Method and device for feeding arsenic dopant into silicon crystal growing process |
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| Country | Link |
|---|---|
| EP (1) | EP1282733A1 (en) |
| JP (1) | JP2003532611A (en) |
| KR (1) | KR20030015239A (en) |
| CN (1) | CN1432075A (en) |
| WO (1) | WO2001086033A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100348783C (en) * | 2004-03-29 | 2007-11-14 | 科发伦材料株式会社 | Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof |
| CN101173368B (en) * | 2006-10-30 | 2010-09-29 | 北京有色金属研究总院 | Crystal growing apparatus with melt-doping facility in crystal growth process |
| CN103160912A (en) * | 2011-12-08 | 2013-06-19 | 有研半导体材料股份有限公司 | Doped region melting single crystal preparation process |
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| DE2542867A1 (en) * | 1975-09-25 | 1977-03-31 | Wacker Chemitronic | PROCESS FOR MANUFACTURING SEMICONDUCTOR SINGLE CRYSTALS WITH ADJUSTABLE DOPENANT CONCENTRATION |
| JPS606920B2 (en) * | 1982-11-12 | 1985-02-21 | 工業技術院長 | Gallium arsenide single crystal production equipment |
| JPS59156993A (en) * | 1983-02-23 | 1984-09-06 | Komatsu Denshi Kinzoku Kk | Method and device for doping cz single crystal |
| FR2628445B1 (en) * | 1988-03-11 | 1990-11-09 | Thomson Hybrides Microondes | DEVICE FOR SYNTHESIS AND DRAWING OF III-V MATERIALS, UNDER LOW PRESSURE AND METHOD USING THE SAME |
| US6059876A (en) * | 1997-02-06 | 2000-05-09 | William H. Robinson | Method and apparatus for growing crystals |
| US6019838A (en) * | 1998-01-05 | 2000-02-01 | Memc Electronic Materials, Inc. | Crystal growing apparatus with melt-doping facility |
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2001
- 2001-04-04 EP EP01924683A patent/EP1282733A1/en not_active Withdrawn
- 2001-04-04 WO PCT/US2001/011006 patent/WO2001086033A1/en not_active Application Discontinuation
- 2001-04-04 CN CN01810286A patent/CN1432075A/en active Pending
- 2001-04-04 JP JP2001582616A patent/JP2003532611A/en not_active Withdrawn
- 2001-04-04 KR KR1020027015127A patent/KR20030015239A/en not_active Application Discontinuation
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| CN100348783C (en) * | 2004-03-29 | 2007-11-14 | 科发伦材料株式会社 | Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof |
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| CN103160912A (en) * | 2011-12-08 | 2013-06-19 | 有研半导体材料股份有限公司 | Doped region melting single crystal preparation process |
| CN103160912B (en) * | 2011-12-08 | 2015-11-11 | 有研半导体材料有限公司 | A kind of preparation technology of the zone melting single-crystal that adulterates |
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| CN105026622B (en) * | 2012-12-31 | 2018-02-02 | Memc电子材料有限公司 | Liquid doped system and method for the controlled doping of single-crystal semiconductor material |
| CN104711675A (en) * | 2015-02-16 | 2015-06-17 | 浙江金瑞泓科技股份有限公司 | Phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal and silicon epitaxial wafer thereof |
| CN104711675B (en) * | 2015-02-16 | 2017-11-10 | 浙江金瑞泓科技股份有限公司 | The N-type adulterating vertical pulling silicon monocrystalline and its silicon epitaxial wafer of phosphorus arsenic antimony codope |
| CN105369346A (en) * | 2015-12-09 | 2016-03-02 | 天津市环欧半导体材料技术有限公司 | Device used for czochralski method of highly arsenic-doped low-resistance silicon single crystals |
| TWI815015B (en) * | 2019-06-28 | 2023-09-11 | 環球晶圓股份有限公司 | Ingot puller apparatus that use a solid-phase dopant |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030015239A (en) | 2003-02-20 |
| JP2003532611A (en) | 2003-11-05 |
| EP1282733A1 (en) | 2003-02-12 |
| WO2001086033A1 (en) | 2001-11-15 |
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