CN1421851A - 一次性写入应用的相变记录元件 - Google Patents
一次性写入应用的相变记录元件 Download PDFInfo
- Publication number
- CN1421851A CN1421851A CN02129728A CN02129728A CN1421851A CN 1421851 A CN1421851 A CN 1421851A CN 02129728 A CN02129728 A CN 02129728A CN 02129728 A CN02129728 A CN 02129728A CN 1421851 A CN1421851 A CN 1421851A
- Authority
- CN
- China
- Prior art keywords
- point
- recording element
- triangle
- phase change
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000009466 transformation Effects 0.000 title description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 239000000203 mixture Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000008859 change Effects 0.000 claims description 53
- 239000000956 alloy Substances 0.000 claims description 45
- 229910045601 alloy Inorganic materials 0.000 claims description 45
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 24
- 238000002310 reflectometry Methods 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 claims 1
- 210000002837 heart atrium Anatomy 0.000 claims 1
- 239000010410 layer Substances 0.000 description 104
- 239000011701 zinc Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 229910052717 sulfur Inorganic materials 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 11
- 238000012546 transfer Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 239000012782 phase change material Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000005864 Sulphur Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/24324—Sulfur
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
坐标 | |||
顶值点 | Sb | Sn | In |
a | 97 | 0 | 3 |
b | 85 | 15 | 0 |
c | 60 | 40 | 0 |
d | 48 | 42 | 10 |
e | 44 | 10 | 46 |
f | 64 | 5 | 31 |
g | 70 | 0 | 30 |
试样# | 溅射速率比 | 用ICP测量的浓度,% | ||||
R | Zn | Sb | In | Sn | Si | |
1 | 1.31 | 45.70 | 31.97 | 7.54 | 6.89 | 7.91 |
2 | 1.09 | 42.21 | 34.92 | 7.99 | 7.56 | 7.33 |
3 | 0.86 | 36.90 | 39.39 | 8.89 | 8.47 | 6.32 |
4 | 0.62 | 30.85 | 44.51 | 9.97 | 9.51 | 5.16 |
5 | 0.39 | 21.96 | 51.85 | 11.46 | 11.12 | 3.61 |
6 | 0.15 | 9.95 | 61.56 | 13.86 | 13.00 | 1.62 |
7 | 0.00 | 0.07 | 69.08 | 15.56 | 15.29 | 0.00 |
数据-时钟抖动,nS | ||
3T标记大小,μm | R=0 | R=0.65 |
0.50 | 3.3 | 2.4 |
0.45 | 3.4 | 2.8 |
0.43 | 4.4 | 3.1 |
0.41 | 5.2 | 4.5 |
数据-时钟抖动,nS | CNR | |||
3T标记大小,μm | R=0 | R=0.61 | R=0 | R=0.61 |
0.5 | 4.01 | 2.38 | 50.2 | 51.7 |
0.45 | 4.65 | 2.51 | 48.3 | 51.0 |
0.43 | 5.05 | 2.66 | 47.4 | 50.2 |
0.41 | 5.69 | 2.73 | 45.5 | 49.6 |
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/925,751 US6544617B1 (en) | 2001-08-09 | 2001-08-09 | Phase-change recording element for write once applications |
US09/925751 | 2001-08-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1421851A true CN1421851A (zh) | 2003-06-04 |
CN1242398C CN1242398C (zh) | 2006-02-15 |
Family
ID=25452173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021297282A Expired - Fee Related CN1242398C (zh) | 2001-08-09 | 2002-08-09 | 一次性写入应用的相变记录元件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6544617B1 (zh) |
EP (1) | EP1283522B1 (zh) |
JP (1) | JP4025139B2 (zh) |
KR (1) | KR20030014651A (zh) |
CN (1) | CN1242398C (zh) |
DE (1) | DE60222619T2 (zh) |
TW (1) | TWI234778B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109860388A (zh) * | 2019-01-09 | 2019-06-07 | 江苏理工学院 | 多层相变薄膜及制备方法和应用 |
CN110233203A (zh) * | 2018-03-06 | 2019-09-13 | 江苏理工学院 | 一种用于高温工况的类超晶格Zn-Sb/Ge-Sb纳米相变存储薄膜及其制备方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6605330B2 (en) * | 2001-11-13 | 2003-08-12 | Eastman Kodak Company | Phase-change recording element for write once applications |
JP2003331461A (ja) * | 2002-05-15 | 2003-11-21 | Pioneer Electronic Corp | 追記型光記録媒体 |
JP2006044215A (ja) * | 2003-11-10 | 2006-02-16 | Ricoh Co Ltd | 光記録媒体及びその製造方法、スパッタリングターゲット、並びに光記録媒体の使用方法及び光記録装置 |
US20070196617A1 (en) * | 2006-02-20 | 2007-08-23 | Moser Baer India Ltd. | High density optical recording media and a method for preparing the same |
US8663772B2 (en) * | 2007-03-19 | 2014-03-04 | Ricoh Company, Ltd. | Minute structure and information recording medium |
JP4793313B2 (ja) * | 2007-04-16 | 2011-10-12 | ソニー株式会社 | 光情報記録媒体ならびにその記録および/または再生方法 |
JP2009003993A (ja) | 2007-06-19 | 2009-01-08 | Sony Corp | 記録媒体およびその製造方法、並びに記録媒体用原盤およびその製造方法 |
TW200931409A (en) * | 2008-01-09 | 2009-07-16 | Cmc Magnetics Corp | AgSb recording thin film for the inorganic write-once optical disc and the manufacturing method |
KR200449439Y1 (ko) * | 2008-08-22 | 2010-07-09 | 김호준 | 신발끈 |
JP2010097639A (ja) | 2008-10-15 | 2010-04-30 | Sony Corp | 光情報記録媒体およびその記録再生方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795695A (en) | 1987-02-13 | 1989-01-03 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
CA1270640A (en) * | 1987-02-13 | 1990-06-26 | Kee-Chuan Pan | Recording elements comprising write-once thin film alloy layers |
US4960680A (en) | 1987-02-13 | 1990-10-02 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
US4812386A (en) | 1987-02-13 | 1989-03-14 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
US4865955A (en) | 1987-06-05 | 1989-09-12 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
US4798785A (en) | 1987-06-05 | 1989-01-17 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
US4774170A (en) | 1987-06-05 | 1988-09-27 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
US5077181A (en) | 1988-08-09 | 1991-12-31 | Eastman Kodak Company | Optical recording materials comprising antimony-tin alloys including a third element |
US4904577A (en) | 1988-11-21 | 1990-02-27 | Tyan Yuan Sheng | Optical recording element and alloy for use therein |
US5271978A (en) | 1992-01-31 | 1993-12-21 | Eastman Kodak Company | Optical recording media |
US5234803A (en) | 1992-05-21 | 1993-08-10 | Eastman Kodak Company | Optical recording media |
US5312664A (en) | 1992-05-21 | 1994-05-17 | Eastman Kodak Company | Optical recording media |
US5625609A (en) * | 1995-03-13 | 1997-04-29 | International Business Machines Corporation | Multiple data layer optical disk drive system with fixed aberration correction and optimum interlayer spacing |
US20020093901A1 (en) * | 2001-01-16 | 2002-07-18 | Davies David H. | First-side dual-layer optical data storage disk and method of manufacturing the same |
-
2001
- 2001-08-09 US US09/925,751 patent/US6544617B1/en not_active Expired - Lifetime
-
2002
- 2002-06-24 TW TW091113755A patent/TWI234778B/zh not_active IP Right Cessation
- 2002-07-29 DE DE60222619T patent/DE60222619T2/de not_active Expired - Lifetime
- 2002-07-29 EP EP02078095A patent/EP1283522B1/en not_active Expired - Fee Related
- 2002-08-07 JP JP2002229381A patent/JP4025139B2/ja not_active Expired - Fee Related
- 2002-08-08 KR KR1020020046820A patent/KR20030014651A/ko not_active Application Discontinuation
- 2002-08-09 CN CNB021297282A patent/CN1242398C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110233203A (zh) * | 2018-03-06 | 2019-09-13 | 江苏理工学院 | 一种用于高温工况的类超晶格Zn-Sb/Ge-Sb纳米相变存储薄膜及其制备方法 |
CN110233203B (zh) * | 2018-03-06 | 2023-04-07 | 江苏理工学院 | 一种用于高温工况的类超晶格Zn-Sb/Ge-Sb纳米相变存储薄膜及其制备方法 |
CN109860388A (zh) * | 2019-01-09 | 2019-06-07 | 江苏理工学院 | 多层相变薄膜及制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
KR20030014651A (ko) | 2003-02-19 |
US6544617B1 (en) | 2003-04-08 |
CN1242398C (zh) | 2006-02-15 |
TWI234778B (en) | 2005-06-21 |
DE60222619T2 (de) | 2008-06-26 |
JP2003072244A (ja) | 2003-03-12 |
JP4025139B2 (ja) | 2007-12-19 |
EP1283522A1 (en) | 2003-02-12 |
EP1283522B1 (en) | 2007-09-26 |
DE60222619D1 (de) | 2007-11-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1242398C (zh) | 一次性写入应用的相变记录元件 | |
EP1959442B1 (en) | Optical information recording medium | |
CN1401117A (zh) | 光学信息介质及其使用 | |
EP1310953B1 (en) | Phase-change recording element for write-once applications | |
KR20060031641A (ko) | 광기록매체 및 이를 제조하기 위한 방법, 및 광기록매체상에 데이터를 기록하기 위한 방법 및 광기록매체로부터데이터를 재생하는 방법 | |
KR100770806B1 (ko) | 광기록매체와 그 제조방법 및 광기록매체에 대한 데이터기록방법 및 데이터 재생방법 | |
EP1388853A2 (en) | Optical recording/reproducing method and optical recording medium | |
CN1227381A (zh) | 光盘 | |
CN1235200C (zh) | 光学信息介质 | |
CN1230816C (zh) | 光记录介质 | |
JPWO2004032130A1 (ja) | 光学的情報記録媒体とその製造方法 | |
JP4271051B2 (ja) | 相変化型情報記録媒体及びスパッタリングターゲット | |
CN1251212C (zh) | 可重写光学数据存储介质 | |
JP2003231354A (ja) | 光情報記録媒体 | |
CN1494071A (zh) | 光记录媒体 | |
CN1146890C (zh) | 光记录介质及其制造方法 | |
WO2005044578A1 (ja) | 光記録媒体及びその製造方法、スパッタリングターゲット、並びに光記録媒体の使用方法及び光記録装置 | |
JP2006289940A (ja) | 相変化光情報記録媒体 | |
JP2006247855A (ja) | 多層相変化型光記録媒体 | |
JP2007062319A (ja) | 光記録媒体 | |
JP2002337451A (ja) | 光記録媒体 | |
WO2007083837A1 (en) | Optical recording medium | |
JP2003242687A (ja) | 多層相変化型情報記録媒体 | |
JP2005246625A (ja) | 光情報記録媒体 | |
WO2005037566A1 (ja) | 相変化型光記録媒体及びその製造方法、スパッタリングターゲット、並びに光記録媒体の使用方法及び光記録装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: 47 GROUP CO., LTD. Free format text: FORMER OWNER: EASTMAN KODAK COMPANY (US) 343 STATE STREET, ROCHESTER, NEW YORK Effective date: 20120704 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: NEW YORK, USA STATE TO: CALIFORNIA, USA STATE |
|
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Patentee after: 47 group Limited by Share Ltd. Address before: California, USA Patentee before: 47 Refco Group Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20120704 Address after: California, USA Patentee after: 47 Refco Group Ltd. Address before: American New York Patentee before: Eastman Kodak Co. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060215 Termination date: 20180809 |
|
CF01 | Termination of patent right due to non-payment of annual fee |