WO2005037566A1 - 相変化型光記録媒体及びその製造方法、スパッタリングターゲット、並びに光記録媒体の使用方法及び光記録装置 - Google Patents
相変化型光記録媒体及びその製造方法、スパッタリングターゲット、並びに光記録媒体の使用方法及び光記録装置 Download PDFInfo
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- WO2005037566A1 WO2005037566A1 PCT/JP2004/015291 JP2004015291W WO2005037566A1 WO 2005037566 A1 WO2005037566 A1 WO 2005037566A1 JP 2004015291 W JP2004015291 W JP 2004015291W WO 2005037566 A1 WO2005037566 A1 WO 2005037566A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/2403—Layers; Shape, structure or physical properties thereof
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
Definitions
- Phase-change optical recording medium Phase-change optical recording medium, method of manufacturing the same, sputtering target, method of using optical recording medium, and optical recording apparatus
- the present invention relates to a phase capable of recording, reproducing, erasing, and / or rewriting information by irradiating a laser beam to cause a material constituting a recording layer to optically change.
- Changeable optical recording medium hereinafter sometimes referred to as “phase-change optical information recording medium”, “optical recording medium”, “optical information recording medium”, “information recording medium”
- the present invention relates to a method for manufacturing an optical recording medium, a sputtering target, a method for using a phase-change optical recording medium, and an optical recording apparatus.
- phase-change recording material used for DVD + RW is an improved version of the AglnSbTe-based high-speed recording material used for CD-RW, which enables recording and erasing at high linear velocities.
- the Sb content is higher than that of the CD-RW compatible recording material in order to correspond to the recording speed in the high linear velocity recording area.
- the crystallization speed increases, but the crystallization temperature decreases. Also, a decrease in the crystallization temperature leads to a deterioration in storage reliability.
- Such a problem of storage reliability of the disc has been suppressed to a level that does not pose a practical problem by increasing the Ag content in the recording material or adding a fifth element such as Ge.
- a fifth element such as Ge.
- the limit recording speed at this time is estimated to be about 18 mZs.
- the present inventors have focused on the GaSb material system as a next-generation high-speed recording material replacing the AglnSbTe system.
- the crystallization rate is high due to the large amount of Sb, and the bonding force between Ga and Sb is large. It takes a lot of energy to rearrange, Excellent stability of morphus mark.
- the inventors of the present invention concluded that the optical recording medium using the GaSb eutectic composition alloy for the recording layer can be repeatedly recorded at a high linear velocity of 8 times the speed of a DVD. We reported at the symposium (see Non-Patent Document 1).
- Patent Document 1 proposes to use a recording material in which a metal or chalcogenide element M is added to an alloy having a composition ratio of GaSb or InSb in the vicinity of 50:50.
- Patent Document 1 states that ⁇ GaSb or InSb alone cannot achieve amorphization because the crystallization rate is too high, but the addition of a metal or chalcogenide element M reduces the crystallization rate. And record information using the phase transition between crystalline and amorphous.
- the alloy near the Ga Sb composition has a melting point of 710 ° C and a crystallization temperature of 350 ° C.
- Patent Document 2 proposes a phase-change optical recording medium using an alloy containing GaSb as a main component as a recording material.
- this optical recording medium information is recorded by using a phase change between crystals, and the degree of modulation is 29% at best, and there is a practical problem.
- Patent Document 2 states, ⁇ If Ga is less than 20%, bulges may occur due to the formation of bubbles in the laser beam irradiation area, and the level at which the reflectance changes will become unstable. There is a practical problem ".
- the phase change between crystals utilizes the difference in reflectance due to the difference in crystal grain size, and is not suitable for high-density information recording in which minute marks need to be recorded.
- the composition formula is In Sb Sn (provided that 5 ⁇ x ⁇ 25, 4 xyz
- a write-once optical recording medium using a recording material represented by 5 ⁇ y ⁇ 80 and 10 ⁇ z ⁇ 38 has been proposed, but is a write-once optical recording medium and not a rewritable optical recording medium.
- composition formula is Cu Sb Te (however, 5 ⁇ x ⁇ 20, 40 ⁇ x ⁇ xy (100-x-y)
- An optical recording medium using a recording material represented by 55) has been proposed.
- the purpose of this proposal was to provide an optical recording medium capable of recording stably at a relatively low light beam scanning speed with little deterioration even after repeated recording and erasing with a low power semiconductor laser many times. It is not intended for high-speed recording at 8x DVD or higher.
- the DVD-ROM has the same capacity as the DVD-ROM, which has good in-circumferential uniformity after initial crystallization, and has a large degree of modulation even at a recording speed of 8x DVD (about 28mZs) or more, enabling overwrite recording and long-term recording.
- a phase-change optical recording medium that allows overwrite recording with little change in the crystal phase reflectivity even after storage has not yet been obtained, and it is hoped that its rapid and powerful provision will be possible! is there.
- Patent Document 1 US Pat. No. 4,818,666
- Patent Document 2 JP-A-61-168145
- Patent Document 3 JP-A-9-286174
- Patent Document 4 JP-A-9-286175
- Patent Document 5 Japanese Patent No. 2867390
- Non-Patent Document 1 Proceedings of the 14th Symposium on Phase Change Recording, pi Chamcteriza tion of Lra3 ⁇ 4b Phase—change Material oi High—Speed ReWritaole Media ”
- the present invention solves the conventional problems, responds to the above demands, has the same capacity as a DVD-ROM with good uniformity in the circumference after initial crystallization, and has a recording speed of 8x DVD (about 28mZs). Even with the above, overwrite recording is possible with a large degree of modulation, and there is little change in the reflectivity of the crystal phase even after long-term storage !, a high-quality phase-change optical recording medium, and production of the phase-change optical recording medium Method, sputtering target, and method of using phase-change optical recording medium It is intended to provide an optical recording device.
- the present invention is based on the above findings by the present inventors, and the means for solving the above problems are as follows. That is,
- a substrate and at least a first intermediate layer, a recording layer, a second intermediate layer, and a reflective layer on the substrate in any of this order or reverse order.
- ⁇ is s from elements other than Ga, Sn, Cu, and Sb, and mixtures of these elements
- the recording layer contains the above composition, it has excellent storage stability, has the same capacity as DVD-ROM, and has a recording linear velocity of 8 ⁇ DVD (about 28 mZs). 3) A phase change type optical recording medium capable of repeating recording at the above recording linear velocity is obtained.
- the recording layer is represented by the following formula: Ga Sn Cu Sb (where a, ⁇ , ⁇ , and ⁇ are ⁇ ⁇ y ⁇ , respectively)
- the phase-change optical recording medium according to ⁇ 1> which contains a composition represented by the following formula: ⁇ 3>
- phase-change optical recording medium according to any one of ⁇ 2> to ⁇ 3>, wherein the recording medium has the same capacity as a DVD-ROM, which has good in-circumferential uniformity after initial crystallization, and has a recording line. It is possible to provide a phase-change optical recording medium that can perform overwrite recording even at a DVD speed of 8x speed (about 28 mZs) or more and has little change in the crystal phase reflectance even after long-term storage.
- phase-change-type light according to ⁇ 1>, wherein M is at least one selected from In, Te-Bi-Al, Zn-Ni-Mn, Cr-Mo, and Hf. It is a recording medium.
- the recording layer has the following formula: Ga Sn Cu Sb In ⁇ (where a, ⁇ , ⁇ , and ⁇ are
- phase-change optical recording medium comprising a composition represented by the following formula:
- the recording layer has the following formula: Ga Sn Cu Sb In ⁇ (where ⁇ , ⁇ , ⁇ and ⁇ are
- phase-change-type optical recording medium Represents the atomic composition ratio of each element, 8 ⁇ a ⁇ 16, 5 ⁇ j8 ⁇ 15, 1 ⁇ 15, 55 ⁇ 75, and 5 ⁇ 15, and ⁇ +
- 8 + ⁇ + ⁇ + ⁇ 100).
- the phase-change-type optical recording medium according to ⁇ 5> further comprising an alloy having a composition represented by the following formula:
- phase-change optical recording medium according to any one of ⁇ 4> and ⁇ 6>, wherein the recording is performed at the same capacity as DVD-ROM, which has good uniformity in the circumference after initial crystallization. It is possible to provide a phase-change type optical recording medium that can perform overwrite recording even at a linear velocity of 10 ⁇ DVD (about 35 mZs) or more and has little change in the crystal phase reflectance even after long-term storage.
- ⁇ 7> The recording layer according to the above ⁇ 1>, wherein the recording layer performs at least one of recording, reproducing, erasing, and rewriting of information by utilizing a reversible phase change between an amorphous phase and a crystalline phase.
- a phase-change optical recording medium according to any one of the above.
- the first and second intermediate layers wherein the first and second intermediate layers each contain a mixture of ZnS and SiO.
- phase-change optical recording medium according to any one of ⁇ 1> to ⁇ 7>.
- phase-change optical recording medium according to any one of ⁇ 1> to ⁇ 9>, wherein the reflection layer contains one of Ag and an Ag alloy.
- phase-change optical recording medium according to any one of ⁇ 1> to ⁇ 10>, wherein the thickness of the reflective layer is 60 to 300 nm.
- phase-change optical recording medium according to ⁇ 11>, wherein the thickness of the reflective layer is 120 to 250 nm.
- phase-change optical recording medium according to any one of ⁇ 1> to ⁇ 12>, further including a third intermediate layer between the second intermediate layer and the reflective layer.
- the reflective layer is formed of one of Ag and an Ag alloy, and the second protective layer is formed. Between ZnS and SiO
- M is at least one selected from In, Te, Bi, Al, Zn, Ni, Mn, Cr, Mo, and Hf.
- the recording layer is formed by using a sputtering method using an alloy target having a predetermined composition to obtain a desired recording layer composition.
- a sputtering method using an alloy target having a predetermined composition to obtain a desired recording layer composition.
- Phase change recording characterized by including a recording layer forming step of forming a recording layer by a sputtering method using the sputtering target according to any one of the above ⁇ 14> Rikaku 19>. This is a method for manufacturing a medium.
- phase-change optical recording medium of the present invention at least any of recording, reproducing, erasing, and rewriting of information is performed by irradiating the optical recording medium of the present invention with a laser beam. As a result, it is possible to efficiently and stably and reliably record, reproduce, erase, and rewrite information.
- phase change type optical recording medium according to any one of ⁇ 1> to ⁇ 13>, wherein information is recorded, reproduced, erased, and rewritten by irradiating a laser beam from the first intermediate layer side.
- a method for using a phase-change optical recording medium characterized by performing at least one of the following.
- at least one of information recording, reproduction, erasing, and rewriting is performed by irradiating the phase-change type optical recording medium of the present invention with a laser beam.
- phase-change optical recording medium is the phase-change optical recording medium according to any one of ⁇ 1> to ⁇ 13>.
- the optical recording device of the present invention is an optical recording device that irradiates a laser beam from a light source to a phase-change optical recording medium to record, reproduce, erase, or rewrite information on the phase-change optical recording medium.
- the phase change type optical recording medium of the present invention is used as the phase change type optical recording medium.
- at least one of recording, reproducing, erasing, and rewriting of information can be performed stably and reliably.
- FIG. 1 is a schematic sectional view showing an example of a basic layer configuration of a phase-change optical recording medium of the present invention.
- FIG. 2 is a graph showing the relationship between the thickness of a reflective layer and a change in modulation factor in Example 11.
- FIG. 3 is a diagram showing the repetition characteristics of Example 4 and Example 12 at a recording linear velocity of 28 mZs.
- FIG. 4 is a graph showing the relationship between the thickness of the reflective layer and the change in the degree of modulation in Example 22.
- FIG. 5 is a diagram showing the repetition characteristics of Example 14 and Example 23 at a recording linear velocity of 35 mZs.
- the phase-change optical recording medium of the present invention comprises a substrate, and at least a first intermediate layer, a recording layer, a second intermediate layer, and a reflective layer on the substrate in any one of the order and the reverse order. necessary And other layers according to.
- the phase change type optical recording medium performs at least one of recording, reproducing, erasing, and rewriting of information by irradiating a laser beam from the first intermediate layer side.
- the recording layer records and erases signals by irradiating a laser beam to change the phase between a crystalline phase and an amorphous phase.
- the reflectivity differs between the crystalline phase and the amorphous phase.
- the unrecorded state is defined as a high-reflectance crystalline phase, and the crystalline layer is irradiated with a high-power laser pulse to heat and rapidly cool the recording layer.
- An amorphous mark with low reflectance is recorded as a signal.
- GaSb has a high crystallization temperature
- the recording conditions are determined according to the optical recording medium immediately after being manufactured, and if the reflectance changes significantly after long-term storage, a signal is sent to the optical recording medium.
- Such an optical recording medium cannot be marketed as a product because recording becomes impossible.
- the reason why the reflectivity of the GaSbSn alloy is reduced is as follows. In the subsequent crystal phase, there are many vacancies, and the crystal phase is in a state where the crystal phase is distorted. The distortion is relaxed with time, and the low reflection shows a lower reflectance than the crystal phase after laser beam irradiation. It is conceivable that it changes to a crystalline phase.
- the GaSbSn alloy is further added with another metal, for example, at least one of Cu and In, in order to solve the above-mentioned problem, a decrease in reflectance after long-term storage can be suppressed. This is presumably because when at least one of Cu and In is added, vacancies found in the GaSbSn alloy are filled with Cu and In, so that the crystal becomes a crystal with little distortion, and the reflectance hardly decreases.
- a combination of Cu and In it is possible to achieve both a high crystallization rate, a small crystallization rate, and a change in reflectance.
- the recording layer has the following formula: Ga Sn Cu Sb ⁇ (where M is Ga, Sn,
- Elements other than Cu and Sb, and a mixture of the elements At least one element selected.
- In is particularly preferable among at least one selected from In, Te, Bi, Al, Zn, Ni, Mn, Cr, Mo and Hf.
- overwrite recording at a DVD speed of 8 times (about 28 mZs) or more is performed using the following formula: Ga Sn Cu Sb (where ⁇ , ⁇
- the content of Ga is less than 5 atomic%, it becomes difficult to form an amorphous phase, and the degree of modulation and recording jitter are reduced. If it exceeds 20 atomic%, the crystallization speed becomes too slow, and it may not be possible to repeat recording at more than 8x DVD speed (about 28mZs). On the other hand, if the content of Sn is less than 10 at%, uniform initial crystallization cannot be performed. If the content exceeds 30 at%, the crystallization speed becomes too fast, and it becomes difficult to form amorphous.
- the Cu content is less than 1 atomic%, the change in reflectance after long-term storage increases, and if it exceeds 20 atomic%, the crystallization speed becomes too slow, making it impossible to repeatedly record at 8x DVD speed. There is.
- the content of Sb is less than 40 atomic%, it is difficult to make the material amorphous, and if the content of Sb is 80 atomic% or more, the uniformity in the circumference after the initialization may be poor.
- the recording layer has the same capacity as a DVD-ROM and has a DVD speed of 10 times (about 3 times).
- ⁇ , j8, ⁇ , and ⁇ represent the atomic composition ratio of each element, and 5 ⁇ 20, 2 ⁇ 20, 1 ⁇ 20, 40 ⁇ 80, and 2 ⁇ 20.
- the content of Ga is less than 5 atomic%, the stability of the amorphous phase is deteriorated. If the content of Ga is more than 20 atomic%, the crystallization speed becomes too slow, and it may be impossible to repeatedly record at a DVD speed of 10 times or more. . If the content of Sn is less than 2 atomic%, uniform initial crystallization may not be performed. If the content of Sn is more than 20 atomic%, the crystallization speed may be too high to make amorphization difficult. It can be. If the Cu content is less than 1 atomic%, the reflectance fluctuation after long-term storage may be too large. If the Cu content is more than 20 atomic%, the crystallization speed becomes too slow, and the DVD is repeatedly recorded at 10 ⁇ speed.
- the In is less than 2 at%, the repetitive recording characteristics at 10 ⁇ DVD speed may be degraded. If the In exceeds 20 at%, the crystallization speed may be too high to make amorphous formation difficult. is there. On the other hand, if the content of Sb is less than 40 at%, it is difficult to make it amorphous, and if it exceeds 80 at%, the uniformity in the circumference after the initialization may be deteriorated.
- a method for forming the recording layer various vapor phase growth methods, for example, a vacuum evaporation method, a sputtering method Ring method, plasma CVD method, optical CVD method, ion plating method, electron beam evaporation method, etc. are used.
- the sputtering method is superior in terms of mass productivity, film quality, and the like.
- Ar gas is used as a film forming gas
- the input power is 1 kW
- the Ar gas pressure (the film forming chamber pressure) is 2 ⁇ 10 -3 Torr.
- the thickness of the recording layer is not particularly limited and can be appropriately selected depending on the intended purpose, and is preferably 10 to 30 nm, more preferably 10 to 20 nm.
- the film thickness is smaller than 10 nm, the light absorbing ability may be reduced and the function as a recording layer may be lost, and when it exceeds 30 nm, the recording sensitivity may be deteriorated.
- FIG. 1 is a schematic sectional view showing an example of the phase change optical recording medium of the present invention.
- a first intermediate layer 2, a recording layer 3, a second intermediate layer 4, a third intermediate layer 5, and a reflective layer 6 are laminated on the substrate 1 in this order.
- a protective layer made of an ultraviolet (UV) curable resin may be formed on the reflective layer by spin coating. If necessary, a further layer of the phase change type optical recording medium may be formed on the protective layer.
- Another substrate may be attached for reinforcement or protection.
- UV ultraviolet
- the substrate As a material for the substrate 1, glass, ceramics, resin, or the like is usually used, but a resin substrate is preferable from the viewpoint of moldability and cost.
- the resin include polycarbonate resin, acrylic resin, epoxy resin, polystyrene resin, acrylonitrile styrene copolymer, polyethylene resin, polypropylene resin, silicone resin, fluorine resin, and the like. ABS resin, urethane resin and the like. Among them, polycarbonate resin and acrylic resin are particularly preferable from the viewpoint of moldability, optical properties and cost.
- the thickness of the substrate 1 is determined by the wavelength of a commonly used laser and the focusing characteristics of a pickup lens, which are not particularly limited.
- a substrate with a thickness of 1.2 mm is used for a CD system with a wavelength of 780 nm, and a substrate with a thickness of 0.6 mm is used for a DVD system with a wavelength of 650 to 665 nm.
- the substrate has, for example, a guide groove for tracking on its surface, a diameter of 12 cm, and a thickness of 12 cm.
- a polycarbonate resin substrate having a disk shape of 0.6 mm and excellent in workability and optical characteristics is preferable.
- the tracking guide groove is preferably a meandering groove having a pitch of 0.74 ⁇ 0.03 ⁇ m, a groove depth of 22-40 ⁇ m, and a groove width of 0.2-0.4 / zm. In particular, by increasing the depth of the groove, the reflectivity of the phase-change optical recording medium decreases, and the degree of modulation can be increased.
- the bonding layer for bonding the substrate 1 on which the information signal is written and the bonding substrate is a double-sided adhesive sheet in which an adhesive is applied to both sides of the base film, a thermosetting resin or It is formed by UV curing resin.
- the thickness of the adhesive layer is usually about 50 m.
- the bonding substrate does not need to be transparent when an adhesive sheet or a thermosetting resin is used as an adhesive layer, but when an ultraviolet-curable resin is used for the adhesive layer. It is preferable to use a transparent substrate that transmits ultraviolet light. Usually, the thickness of the bonding substrate is preferably 0.6 mm, which is the same as that of the transparent substrate 1 on which information signals are written.
- the first intermediate layer 2 preferably has good adhesion to the substrate and the recording layer, and preferably has high heat resistance. Further, the first intermediate layer 2 functions as a light interference layer that enables effective light absorption of the recording layer. Therefore, it is preferable to have optical characteristics suitable for repetitive recording at a high linear velocity.
- the material of the first intermediate layer for example, SiO, SiO, ZnO, SnO, Al O, TiO
- Metal oxides such as, InO, MgO, ZrO; nitrides such as SiN, A1N, TiN, BN, ZrN;
- Sulfides such as ZnS, InS and TaS; carbides such as SiC, TaC, BC, WC, TiC and ZrC
- Diamond-like carbon or a mixture thereof.
- a mixture of ZnS and SiO is preferred.
- the mixture molar ratio of ZnS and SiO (ZnS: SiO) is 50-90: 50.
- the first intermediate layer 2 may be formed by various vapor deposition methods, for example, a vacuum deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam deposition method, and the like. Is mentioned. Among these, the sputtering method is superior in terms of mass productivity, film quality, and the like.
- the sputtering conditions for example, Ar gas is used as a film forming gas, the input power is 3 kW, and the Ar gas pressure (the film forming chamber pressure) is 2 ⁇ 10 -3 Torr.
- the thickness of the first intermediate layer is not particularly limited and can be appropriately selected depending on the purpose, and is preferably 40 to 500 nm, more preferably 60 to 200 nm. If the film thickness is less than Onm, the substrate may be deformed because the substrate is heated at the same time when the recording layer is heated, and if it exceeds 500 nm, the substrate and the first intermediate layer may be deformed. Peeling may easily occur at the interface.
- the second intermediate layer 4 preferably has good adhesion to the recording layer and the reflective layer, and preferably has high heat resistance. Further, the second intermediate layer 4 serves as a light interference layer that enables effective light absorption of the recording layer. Also, it is preferable to have optical characteristics suitable for repetitive recording at a high linear velocity.
- the material of the first intermediate layer for example, SiO, SiO
- Metal oxides such as, InO, MgO, ZrO; nitrides such as SiN, A1N, TiN, BN, ZrN;
- Sulfides such as ZnS, InS and TaS; carbides such as SiC, TaC, BC, WC, TiC and ZrC
- Diamond-like carbon or a mixture thereof.
- a mixture of ZnS and SiO is preferred.
- the mixture molar ratio of ZnS and SiO (ZnS: SiO) is 50-90: 50.
- various vapor deposition methods for example, a vacuum deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam deposition method, and the like Is used.
- the sputtering method is superior in terms of mass productivity, film quality, and the like.
- Ar gas is used as a film forming gas
- the input power is 3 kW
- the Ar gas pressure (the film forming chamber pressure) is 2 ⁇ 10 -3 Torr.
- the thickness of the second intermediate layer is not particularly limited and can be appropriately selected depending on the intended purpose, and is preferably 5 to 100 nm, more preferably 5 to 20 nm. If the film thickness exceeds 100 nm, heat may be too high to form an amorphous phase, and if it is less than 5 nm, the recording sensitivity may deteriorate.
- the reflection layer plays a role as a light reflection layer, and also plays a role as a heat radiation layer for releasing heat applied to the recording layer by laser light irradiation during recording. Since the formation of the amorphous mark is greatly affected by the cooling rate due to heat radiation, the selection of the reflective layer is made at a high linear velocity. This is important for compatible phase change optical recording media.
- the reflective layer 6 can be made of, for example, a metal material such as Al, Au, Ag, Cu, and Ta, or an alloy thereof.
- Cr, Ti, Si, Cu, Ag, Pd, Ta, or the like can be used as an additive element to these metal materials.
- a high thermal conductivity Z a metal with a high reflectivity
- the thermal conductivity of Ag is as high as 27 WZm'K. This is because a quenching structure suitable for forming an amorphous mark can be realized.
- pure silver is the best in consideration of high thermal conductivity as described above, Cu may be added in consideration of corrosion resistance. In this case, the characteristics of Ag are not impaired, and copper must be added!
- the amount range is preferably about 0.1 to 10 atomic%, and particularly preferably 0.5 to 3 atomic%. Excessive addition of copper can reduce the high thermal conductivity of Ag.
- the reflective layer 6 can be formed by various vapor deposition methods, for example, a vacuum deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method, an electron beam deposition method, or the like. Among them, the sputtering method is superior in mass productivity, film quality, and the like. Sputtering conditions, using Ar gas as a deposition gas, input power 5 kW, an Ar gas pressure (Narumakushitsuki pressure) 2 X 10 _3 Torr is preferred.
- the thickness of the reflective layer can be appropriately selected depending on the particular purpose, and is preferably 60 to 300 nm, more preferably 120 to 250 nm. If the thickness is less than 60 nm, a heat radiation effect cannot be obtained, and amorphous may be difficult to form. If the thickness is more than 300 nm, interface peeling may easily occur.
- a resin protection layer can be further provided on the reflection layer 6 as necessary.
- the resin protective layer has an effect of protecting the recording layer during the process and at the time when the product is formed, and is usually formed of an ultraviolet curable resin.
- the thickness of the resin protective layer is preferably 2-5 / zm.
- Third intermediate layer Preferably, a third intermediate layer 5 is provided between the second intermediate layer 4 and the reflective layer 6.
- a material of the third intermediate layer 5 for example, Si, SiC, SiN, SiO, TiC, TiO, TiC Ti
- pure Ag or Ag alloy When pure Ag or Ag alloy is used for the reflective layer, it contains sulfur such as a mixture of ZnS and SiO.
- Material is preferred as a constituent material of the third intermediate layer.
- the thickness of the third intermediate layer is preferably 2-20 nm, more preferably 2-20 nm. If the film thickness is less than 2 nm, it may not function as a nora layer, and if it exceeds 20 nm,
- the degree of modulation may be reduced.
- the interface layer contains SiO and has a thickness of 2 lOnm. This enables high power recording
- the damage to the substrate can be reduced, so that the repetitive recording characteristics in high-power recording are improved, and the recording power margin can be widened. If the thickness of the interface layer is less than 2 nm, it may be difficult to form a uniform SiO film.
- phase change optical recording medium of the present invention has been described in detail above.
- the present invention is not limited to the above embodiment, and various changes may be made without departing from the spirit of the present invention.
- a bonding substrate such as that found in a DVD system
- a phase-change optical recording medium or the like in which two identical or different phase-change optical recording media are bonded to each other via a resin protective layer. Is also applicable.
- the sputtering target of the present invention is used for manufacturing a recording layer, and has the following formula: Ga Sn Cu Sb ⁇ ⁇ (where M is an element other than Ga, Sn, Cu, and Sb, and a mixture ⁇ of the elements)
- In is particularly preferable among at least one selected from In, Te, Bi, Al, Zn, Ni, Mn, Cr, Mo and Hf.
- the sputtering target has the following formula: Ga Sn Cu Sb (provided that
- ⁇ , j8, ⁇ , and ⁇ represent the atomic composition ratio of each element, and are 5 ⁇ 20, 10 ⁇ 30, 1 ⁇ 20, and 40 ⁇ 80.
- ⁇ + ⁇ + ⁇ 100 at a) preferably contain a composition represented by the tool following equation, Ga Sn Cu Sb (However, 5 ⁇ ⁇ ⁇ 1
- the sputtering target has the following formula: Ga Sn Cu Sb In ⁇
- the method of producing the sputtering target can be appropriately selected depending on the particular purpose, and a predetermined charged amount is weighed in advance and heated and melted in a glass ampoule. Thereafter, this is taken out and pulverized by a pulverizer, and the obtained powder is heated and sintered to obtain a disk-shaped sputtering target.
- initial crystallization is easy, and the same capacity as the DVD-ROM and the DVD 8 ⁇ speed ( Even at a high linear velocity of about 28 mZs) or more, the recording sensitivity is good, the recording can be repeated, and the phase change type optical recording medium excellent in the storage reliability can be provided.
- phase change optical recording medium having the same capacity as a DVD-ROM and having good repetitive recording characteristics in a wide recording linear velocity region, and a sputtering target for manufacturing the phase change optical recording medium. it can.
- the method for producing a phase change recording medium of the present invention includes at least a recording layer forming step, an initial crystallization step, and further includes other steps as necessary.
- the recording layer forming step is a step of forming a recording layer by a sputtering method using the sputtering target of the present invention.
- the sputtering method is not particularly limited and can be appropriately selected from known methods depending on the purpose.
- Ar gas is used as a film forming gas
- an input voltage is 11 kW
- a film forming gas flow rate is 10 to 10 kW.
- 40 sccm is preferred.
- Ar gas pressure in the chamber in one in sputtering 7. 0 X 10- 3 mTorr ( mbar) or less.
- a phase change optical recording medium is rotated at a constant linear velocity in the range of 10- 21MZs, a step of performing initial crystallization at a power density 15- 40mWZ m 2.
- the initial crystallization is performed by rotating the phase-change optical recording medium at a predetermined linear velocity or at a predetermined constant angular velocity from the substrate side through an objective lens through a semiconductor laser.
- Irradiate light for recording such as an oscillation wavelength of 720 nm. Due to the irradiation light, the recording layer absorbs the light and locally raises the temperature.
- information is recorded by forming pits and changing their optical characteristics.
- the reproduction of the information recorded as described above is performed by irradiating the laser beam from the first intermediate layer side while rotating the phase-change optical recording medium at a predetermined linear velocity, and detecting the reflected light. It can be carried out.
- the method for using the phase-change optical recording medium of the present invention includes recording, reproducing, erasing, and writing information by irradiating a laser beam from the first intermediate layer side of the phase-change optical recording medium of the present invention. At least one of the replacements is performed.
- the recording linear velocity of the optical recording medium is, for example, DVD 8 ⁇ speed (about 28 mZs) or more.
- recording light such as a semiconductor laser (for example, an oscillation wavelength of 600 to 720 nm) is irradiated from the substrate side through the objective lens while rotating the optical recording medium at a predetermined linear velocity. Due to the irradiation light, the recording layer absorbs the light and locally raises the temperature. For example, information is recorded by forming pits and changing the optical characteristics. The information recorded as described above can be reproduced by rotating the optical recording medium at a predetermined linear velocity, irradiating the substrate with a laser beam, and detecting the reflected light.
- a semiconductor laser for example, an oscillation wavelength of 600 to 720 nm
- the optical recording apparatus of the present invention is an optical recording apparatus that irradiates a laser beam from a light source to a phase change optical recording medium to record information on the phase change optical recording medium.
- the optical recording device can be appropriately selected depending on the purpose of the present invention.
- a laser light source that is a light source such as a semiconductor laser that emits a laser beam, a laser-light source, A condensing lens that condenses light on an optical recording medium mounted on a spindle, an optical element that guides laser light emitted from a laser light source to a condensing lens and a laser light detector, and a laser that detects reflected light of laser light
- a photodetector is provided, and other means are provided as necessary.
- the optical recording device guides laser light emitted from a laser light source to a light collecting lens by an optical element, and condenses and irradiates the laser light to a phase change optical recording medium by the light collecting lens. To record. At this time, the optical recording device guides the reflected light of the laser light to the laser single photodetector, and controls the light amount of the laser light source based on the detection amount of the laser light by the laser light detector.
- the laser light detector converts the detected amount of the detected laser light into a voltage or a current and outputs it as a detected amount signal.
- Examples of the other means include a control means.
- the control means is not particularly limited as long as the movement of each means described above can be controlled. Examples thereof include devices such as a sequencer and a computer for irradiating and scanning an intensity-modulated laser beam.
- overwrite recording is possible even when the recording linear velocity is equal to or higher than the DVD 8 ⁇ speed (about 28 mZs), with the same capacity as the DVD-ROM, which has good circumferential uniformity after the initial crystallization. It is possible to provide a phase-change optical recording medium in which the change in the reflectance of the crystal phase is small even after long-term storage. Further, according to the present invention, it is possible to provide a phase change type optical recording medium having a large degree of modulation and good overwrite recording characteristics.
- a polycarbonate resin substrate having a track pitch of 0.74 m, a guide groove having a groove depth of 400 A and a diameter of 12 cm and a thickness of 0.6 mm was prepared.
- the first intermediate layer, the recording layer, the second intermediate layer, and the third intermediate layer were formed on the substrate by a sputtering method in an Ar gas atmosphere using a single-wafer sputtering apparatus (Big Sprinter, manufactured by Unaxis). , and it was first deposited a reflective layer in this order with a sputtering target made of (ZnS) composition of (SiO) (mol 0/0),
- the film thickness was deposited a first intermediate layer by a sputtering method so as to 70nm on the substrate, using a sputtering target having a composition of Ga Sn Cu Sb (atomic 0/0),
- a recording layer was formed on the first intermediate layer by a sputtering method so as to have a thickness of 16 nm.
- the target of the recording layer is weighed in advance, heated and melted in a glass ampoule, taken out, crushed by a crusher, and heated and sintered to obtain a disc-shaped target. Shaped.
- ICP inductively coupled plasma
- the composition ratio was the same as the target charge amount.
- a sequential ICP emission spectrometer (Seiko Instrument Co., Ltd., SPS4000) was used.
- the alloy composition of the recording layer and the alloy composition of the sputtering target were the same. is there.
- a second intermediate layer was formed on the recording layer by a sputtering method so as to have a film thickness of lOnm.
- a third intermediate layer was formed on the second intermediate layer by a sputtering method so as to have a film thickness of nm using a sputtering target capable of producing SiC force.
- a reflective layer was formed on the third intermediate layer by a sputtering method so as to have a thickness of 140 nm, using a sputtering target having an Ag force.
- an acrylic curing resin (SD318, manufactured by Dainippon Ink and Chemicals, Inc.) is applied on the reflective layer so as to have a film thickness of 5 to 10 m by a spin coating method, followed by ultraviolet curing. To form an organic protective layer.
- Example 1 a polycarbonate resin substrate having a diameter of 12 cm and a thickness of 0.6 mm was bonded to the organic protective layer using an ultraviolet-curable resin (DVD003, manufactured by Nippon Chemical Industry Co., Ltd.). As described above, the phase change type optical recording medium of Example 1 was manufactured.
- an ultraviolet-curable resin DVD003, manufactured by Nippon Chemical Industry Co., Ltd.
- phase-change optical recording medium - in Example 1 the sputtering data having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 2 was produced in the same manner as in Example 1 except that a recording layer was formed by a sputtering method using one get.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 3 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- Example 4 In the same manner as in Example 1 except that the recording layer was formed by a sputtering method using a get. Thus, a phase change type optical recording medium of Example 4 was produced.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 5 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering Target having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 6 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a unit.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 7 was produced in the same manner as in Example 1 except that the recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering Target having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 8 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a unit.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 9 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a get.
- Example 1 Preparation of phase change optical recording medium-
- the sputtering target composed of Ga Sn Cu Sb (atomic 0 / o) was used.
- a phase-change optical recording medium of Example 10 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a unit.
- phase-change optical recording medium - in Example 1 the sputtering Target having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 1 was produced in the same manner as in Example 1 except that the recording layer was formed by a sputtering method using a unit.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 2 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 3 was produced in the same manner as in Example 1 except that the recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 4 was produced in the same manner as in Example 1 except that a recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering Target having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 5 was produced in the same manner as in Example 1 except that the recording layer was formed by a sputtering method using a unit. (Comparative Example 6)
- phase-change optical recording medium - in Example 1 the sputtering coater having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 6 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a get.
- phase-change optical recording medium - in Example 1 the sputtering Target having a composition of Ga Sn Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 7 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method using a unit.
- phase-change optical recording medium - in Example 1 the sputtering target having a composition of Ga Sn Sb (atomic 0/0)
- a phase-change optical recording medium of Comparative Example 8 was produced in the same manner as in Example 1, except that the recording layer was formed by a sputtering method.
- phase change optical recording medium using a Hitachi Computer Peripherals Co., Ltd. initial KaSo location (POP 120- 7AH), is rotated at a constant linear velocity 12MZs, power density of 20 mWZ m 2 laser The irradiation was performed by sending light in the radial direction and moving it at 36 mZr.
- the recording strategy was optimized for each recording. All regenerations were performed at a linear velocity of 3.5 mZs and a power of 0.7 mW.
- the jitter is a value obtained by standardizing data to clock jitter ⁇ with the detection window width Tw. The results are shown in Tables 3 and 4.
- the evaluation criteria for each evaluation item are as follows. ⁇ Uniform distribution in the circumference after initial crystallization>
- the case where the obtained in-circumference reflectance distribution was less than 10% was evaluated as ⁇ , the case of 10-13% was evaluated as ⁇ , and the case of exceeding 13% was evaluated as X.
- the inner circumference reflectivity distribution is less than 10%, but if the inner circumference reflectivity distribution is less than 10%, it is sufficiently possible to optimize the initialization conditions so that the inner circumference reflectivity distribution is less than 10%. It is.
- the degree of modulation at a recording linear velocity of 28 mZs the case where the DVD standard value is 60% or more is ⁇ , the case where 65% or more that can obtain a more stable system is ⁇ , and the case where it is 55% or more and less than 60%. ⁇ , when less than 55%, was evaluated as X. Up to 4x DVD recording, the standard value of the modulation factor was 60% or more, and the power reflectivity is high! In this case, if the modulation factor is 55% or more, practical use is possible.
- the optical recording medium of Example 110 had good distribution uniformity in the circumference after the initialization, and good jitter after the initial recording and the 100-time recording at 8x DVD speed. Further, with respect to the degree of modulation, in Example 14, the degree of modulation for obtaining a stable system was 65% or more, which was particularly good, and the reduction in reflectance was small with respect to storage stability. After the optical recording medium of Example 110 was held in a constant temperature bath at 80 ° C. and 85% RH for 300 hours, recording was performed at a recording linear velocity of 28 mZs. The jitter was 9% or less.
- Comparative Example 1 the modulation degree and the recording jitter at 8 ⁇ speed recording were bad.
- Comparative example Sample No. 2 had particularly poor repetitive recording characteristics at 8 ⁇ speed and uniformity in the circumference after initial crystallization.
- Comparative Example 3 the crystallization speed was too high to make it amorphous, and it was not possible to record at 8 ⁇ speed.
- Comparative Example 4 the crystallization speed was too slow to record at 8 ⁇ speed.
- Comparative Example 5 the uniformity of the distribution in the circumference after the initial crystallization was poor, and the recording jitter was bad.
- Comparative Example 6 the crystallization speed was too high to make it amorphous, so that the recording could not be performed at 8 ⁇ speed.
- Comparative Example 7 the uniformity of distribution in the circumference after the initial crystallization was poor, and the recording jitter was bad. Comparative Example 8 did not contain Cu, so that the reflectance of the crystal phase after long-term storage varied greatly.
- Seven optical recording media were produced in the same manner as in Example 2 except that the thickness of the reflective layer was changed to 40 nm, 60 nm, 120 nm, 140 nm, 200 nm, 250 nm, and 300 nm, respectively.
- the degree of modulation is 60% or more when the thickness of the reflective layer is between 60 and 300 nm, and the degree of modulation is 65% or more especially when the thickness of the reflective layer is between 120 and 250 nm. A modulation degree sufficient to obtain a system was obtained.
- the degree of modulation of the obtained optical recording medium was examined at a recording linear velocity of 28 mZs, the degree of modulation was as small as 52%.
- FIG. 3 shows the results of the repetition characteristics of the optical recording media of Examples 4 and 12 at a recording linear velocity of 28 mZs.
- a polycarbonate resin substrate having a track pitch of 0.74 m, a guide groove having a groove depth of 400 A and a diameter of 12 cm and a thickness of 0.6 mm was prepared.
- a single-wafer sputtering apparatus The first intermediate layer, recording layer, second intermediate layer, third intermediate layer, and reflective layer were formed in this order by a sputtering method in an Ar gas atmosphere using a device (Big Sprinter, manufactured by Unaxis).
- the film thickness was deposited a first intermediate layer by a sputtering method so as to 70nm on the substrate, use a sputtering target having a composition of Ga Sn In Cu Sb (atomic 0/0)
- a recording layer was formed on the first intermediate layer by a sputtering method so as to have a thickness of 16 nm.
- the target of the recording layer was weighed in advance, heated and melted in a glass ampule, taken out, crushed by a crusher, and heated and sintered to obtain a disk-shaped target shape. .
- the composition ratio of the recording layer after film formation was measured by inductively coupled plasma (ICP) emission spectroscopy, the composition ratio was the same as the target charge amount.
- ICP emission spectroscopy a sequential ICP emission spectrometer (SPS4000 manufactured by Seiko Instruments Inc.) was used. Note that, in Examples and Comparative Examples described later, the alloy composition of the recording layer and the alloy composition of the sputtering target are the same.
- a second intermediate layer was formed on the recording layer by a sputtering method so as to have a film thickness of lOnm.
- a third intermediate layer was formed on the second intermediate layer by a sputtering method so as to have a film thickness of nm using a sputtering target capable of producing SiC force.
- a reflective layer was formed on the third intermediate layer by a sputtering method so as to have a thickness of 140 nm, using a sputtering target having an Ag force.
- an acrylic curing resin (SD318, manufactured by Dainippon Ink and Chemicals, Inc.) is applied on the reflective layer so as to have a film thickness of 5 to 10 m by a spin coating method, followed by ultraviolet curing. To form an organic protective layer.
- Example 13 a phase-change optical recording medium of Example 13 was produced.
- phase-change optical recording medium - in Example 13 a composition of Ga Sn In Cu Sb (atomic 0/0) sputtering
- a phase change optical recording medium of Example 14 was produced in the same manner as in Example 13, except that the recording layer was formed by a sputtering method using a target.
- phase-change optical recording medium - in Example 13 a composition of Ga Sn In Cu Sb (atomic 0/0) sputtering
- a phase change optical recording medium of Example 15 was produced in the same manner as in Example 13, except that the recording layer was formed by a sputtering method using a target.
- phase-change optical recording medium - in Example 13 sputtering data having a composition of Ga Sn In Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 16 was produced in the same manner as in Example 13 except that a recording layer was formed by a sputtering method using one get.
- phase-change optical recording medium - in Example 13 sputtering data having a composition of Ga Sn In Cu Sb (atomic 0/0)
- a phase change optical recording medium of Example 17 was produced in the same manner as in Example 13, except that a recording layer was formed by a sputtering method using one get.
- phase-change optical recording medium - in Example 13 sputtering data having a composition of Ga Sn In Cu Sb (atomic 0/0)
- phase change optical recording medium In the thirteenth embodiment, a sputtering target having a composition of Ga Sn In Cu Sb (atomic 0 / o) was used.
- a phase change optical recording medium of Example 19 was produced in the same manner as in Example 13, except that the recording layer was formed by a sputtering method using one get.
- phase-change optical recording medium - in Example 13 a composition of Ga Sn In Cu Sb (atomic 0/0) sputtering
- a phase change optical recording medium of Example 20 was produced in the same manner as in Example 13, except that a recording layer was formed by a sputtering method using a target.
- phase-change optical recording medium - in Example 13 a composition of Ga Sn In Cu Sb (atomic 0/0) sputtering
- a phase change optical recording medium of Example 21 was produced in the same manner as in Example 13, except that a recording layer was formed by a sputtering method using a target.
- phase-change optical recording medium - in Example 13 a composition of Ga Sn In Cu Sb (atomic 0/0) sputtering
- a phase change optical recording medium of Comparative Example 9 was produced in the same manner as in Example 13, except that the recording layer was formed by a sputtering method using a target.
- phase-change optical recording medium - in Example 13 sputtering data having a composition of Ga Sn In Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 10 was produced in the same manner as in Example 13, except that the recording layer was formed by a sputtering method using one get.
- phase-change optical recording medium - in Example 13 sputtering data having a composition of Ga Sn In Cu Sb (atomic 0/0)
- a phase change optical recording medium of Comparative Example 11 was produced in the same manner as in Example 13, except that the recording layer was formed by a sputtering method using one get. (Comparative Example 12)
- a phase change optical recording medium of Comparative Example 13 was produced in the same manner as in Example 13 except that the recording layer was formed by a sputtering method using one get.
- a phase change optical recording medium of Comparative Example 14 was produced in the same manner as in Example 13, except that a recording layer was formed by a sputtering method using one get.
- phase-change optical recording medium - in Example 13 a composition of Ga Sn In Cu Sb (atomic 0/0) sputtering
- phase change optical recording medium using a Hitachi Computer Peripherals Co., Ltd. initial KaSo location (POP 120- 7AH), is rotated at a constant linear velocity 12MZs, power density of 20 mWZ m 2 laser The irradiation was performed by sending light in the radial direction and moving it at 36 mZr.
- Each optical recording medium was evaluated for uniformity of distribution in the circumference after initial crystallization, degree of modulation at a recording linear velocity of 35 mZs, jitter after initial recording and 100 times of overwriting, and storage stability.
- the jitter is a value obtained by standardizing data to clock jitter ⁇ with the detection window width Tw. The results are shown in Tables 7 and 8.
- ⁇ was evaluated as less than 9%, ⁇ as 9% or more and 10% or less, and X as more than 10%. If the standard value is 10% or less, which is a jitter of less than 9%, it is a level that can be practically used by optimizing the layer configuration. [0117] ⁇ Reflectance variation of crystal phase after long-term storage>
- the change in reflectance at 80 ° C is small.However, considering that the most severe optical recording media use environment is around 55 ° C, if it can be guaranteed at 70 ° C, it will be sufficient for practical use. It is a possible level.
- the crystallization speed was too slow, so that it was impossible to repeatedly record at 10 ⁇ DVD speed.
- the optical recording medium of Comparative Example 11 similarly to Comparative Example 9, it was difficult to form an amorphous phase and the modulation was small.
- the optical recording medium of Comparative Example 12 was inferior in the in-circumference distribution uniformity after the initial crystallization and had poor recording jitter.
- the recording jitter was poor, and the amorphous mark disappeared after the accelerated test under the environment of 80 ° C-85% RH.
- the optical recording medium of Comparative Example 14 had poor uniformity of distribution in the circumference after the initial crystallization, and also had poor recording jitter.
- the optical recording medium of Comparative Example 15 was difficult to be made amorphous.
- the modulation is more than 60% when the thickness of the reflective layer is between 60 and 300 nm, and the modulation is more than 65% especially when the thickness of the reflective layer is between 120 and 250 nm.
- the modulation depth sufficient to obtain a stable system was obtained.
- An optical recording medium was manufactured in the same manner as in Example 14, except that the Ag force was changed to AlTi (Ti: 1% by mass) in the material of the reflective layer.
- the degree of modulation of the obtained optical recording medium was examined at a recording linear velocity of 35 mZs, the degree of modulation was as small as 45%.
- FIG. 5 shows the repetitive recording characteristics of Example 23 at a recording linear velocity of 35 mZs, which were evaluated in the same manner as Examples 13-21, together with the results of Example 14.
Abstract
Description
Claims
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EP04792508A EP1685971A4 (en) | 2003-10-16 | 2004-10-15 | PHASE TRANSITION TYPE OPTICAL RECORDING MEDIUM, METHOD FOR PRODUCING THE SAME, SPUTTERING TARGET, METHOD OF USING THE OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDING APPARATUS |
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JP2003-355932 | 2003-10-16 | ||
JP2003355932A JP3955007B2 (ja) | 2003-10-16 | 2003-10-16 | 相変化型光記録媒体 |
JP2003-393139 | 2003-11-21 | ||
JP2003393139A JP3664403B2 (ja) | 2003-11-21 | 2003-11-21 | 相変化型光記録媒体 |
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ES2302663B2 (es) * | 2008-02-28 | 2009-02-16 | Universidad Politecnica De Madrid | Procedimiento para la obtencion de peliculas de materiales semiconductores incorporando una banda intermedia. |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60177446A (ja) * | 1984-02-23 | 1985-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 光デイスク記録媒体 |
JPS63307234A (ja) * | 1987-06-05 | 1988-12-14 | Hitachi Ltd | 記録媒体用ガリウム−アンチモン合金 |
JP2002144736A (ja) * | 2000-08-31 | 2002-05-22 | Matsushita Electric Ind Co Ltd | 情報記録媒体およびその製造方法ならびにその記録再生方法 |
JP2003094819A (ja) * | 2001-09-21 | 2003-04-03 | Ricoh Co Ltd | 光記録媒体及び光記録媒体用スパッタリングターゲット |
JP2003231354A (ja) * | 2002-02-05 | 2003-08-19 | Ricoh Co Ltd | 光情報記録媒体 |
JP2003291534A (ja) * | 2002-04-02 | 2003-10-15 | Ricoh Co Ltd | 光記録媒体 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US4904577A (en) * | 1988-11-21 | 1990-02-27 | Tyan Yuan Sheng | Optical recording element and alloy for use therein |
US5312664A (en) * | 1992-05-21 | 1994-05-17 | Eastman Kodak Company | Optical recording media |
US6231945B1 (en) * | 1997-09-09 | 2001-05-15 | Hitachi, Ltd. | Information recording medium |
CN1290106C (zh) * | 2002-03-07 | 2006-12-13 | 株式会社理光 | 光记录媒体及其制造方法 |
-
2004
- 2004-10-15 WO PCT/JP2004/015291 patent/WO2005037566A1/ja active Application Filing
- 2004-10-15 EP EP04792508A patent/EP1685971A4/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60177446A (ja) * | 1984-02-23 | 1985-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 光デイスク記録媒体 |
JPS63307234A (ja) * | 1987-06-05 | 1988-12-14 | Hitachi Ltd | 記録媒体用ガリウム−アンチモン合金 |
JP2002144736A (ja) * | 2000-08-31 | 2002-05-22 | Matsushita Electric Ind Co Ltd | 情報記録媒体およびその製造方法ならびにその記録再生方法 |
JP2003094819A (ja) * | 2001-09-21 | 2003-04-03 | Ricoh Co Ltd | 光記録媒体及び光記録媒体用スパッタリングターゲット |
JP2003231354A (ja) * | 2002-02-05 | 2003-08-19 | Ricoh Co Ltd | 光情報記録媒体 |
JP2003291534A (ja) * | 2002-04-02 | 2003-10-15 | Ricoh Co Ltd | 光記録媒体 |
Non-Patent Citations (1)
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---|
See also references of EP1685971A4 * |
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