CN1417386A - 直拉硅单晶炉热屏方法及热屏蔽器 - Google Patents
直拉硅单晶炉热屏方法及热屏蔽器 Download PDFInfo
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- CN1417386A CN1417386A CN01134359A CN01134359A CN1417386A CN 1417386 A CN1417386 A CN 1417386A CN 01134359 A CN01134359 A CN 01134359A CN 01134359 A CN01134359 A CN 01134359A CN 1417386 A CN1417386 A CN 1417386A
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- heat shielding
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- 239000013078 crystal Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910002804 graphite Inorganic materials 0.000 claims description 20
- 239000010439 graphite Substances 0.000 claims description 20
- 238000004321 preservation Methods 0.000 claims description 15
- 239000010453 quartz Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 230000002950 deficient Effects 0.000 description 13
- 238000005520 cutting process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000289 melt material Substances 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 241000772415 Neovison vison Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- -1 pa melt fully Chemical compound 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
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CN 01134359 CN1215203C (zh) | 2001-11-01 | 2001-11-01 | 直拉硅单晶炉热屏方法及热屏蔽器 |
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CN 01134359 CN1215203C (zh) | 2001-11-01 | 2001-11-01 | 直拉硅单晶炉热屏方法及热屏蔽器 |
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CN1417386A true CN1417386A (zh) | 2003-05-14 |
CN1215203C CN1215203C (zh) | 2005-08-17 |
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Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101805922A (zh) * | 2010-04-27 | 2010-08-18 | 王敬 | 热屏和具有其的铸锭炉 |
CN101838842A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101838841A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101838846A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101838847A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101886289A (zh) * | 2009-05-13 | 2010-11-17 | 硅电子股份公司 | 从熔体中生长硅单晶的方法和装置 |
CN102011181A (zh) * | 2010-12-24 | 2011-04-13 | 温州神硅电子有限公司 | 一种直拉法生长太阳能用8吋硅单晶的热场装置 |
CN102162123A (zh) * | 2011-04-01 | 2011-08-24 | 江苏大学 | 双加热器移动热屏式直拉单晶炉 |
CN101760773B (zh) * | 2010-02-04 | 2011-11-09 | 西安隆基硅材料股份有限公司 | 一种直拉单晶隔热装料方法及其装置 |
CN102732949A (zh) * | 2012-06-21 | 2012-10-17 | 芜湖昊阳光能股份有限公司 | 一种石墨热场的导流筒结构 |
CN102758258A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 单晶炉用伸展式热屏蔽器 |
CN102758245A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 除氧型单晶炉 |
CN102817071A (zh) * | 2012-06-20 | 2012-12-12 | 合肥景坤新能源有限公司 | 防热辐射直拉多或单晶硅制备工艺 |
CN102817069A (zh) * | 2012-06-20 | 2012-12-12 | 合肥景坤新能源有限公司 | 复合加热防辐射式直拉多或单晶硅制备工艺 |
CN103451721A (zh) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | 带水冷热屏的单晶生长炉 |
CN104278320A (zh) * | 2013-07-04 | 2015-01-14 | 有研新材料股份有限公司 | 一种用于测量直拉硅单晶炉中硅熔体液面位置的装置 |
CN104619893A (zh) * | 2012-10-03 | 2015-05-13 | 信越半导体株式会社 | 单晶硅生长装置以及单晶硅生长方法 |
CN107130295A (zh) * | 2017-04-17 | 2017-09-05 | 宜昌南玻硅材料有限公司 | 一种消除硅芯棒隐裂的装置及方法 |
CN107523869A (zh) * | 2017-09-21 | 2017-12-29 | 浙江晶盛机电股份有限公司 | 一种单晶炉可提升水冷热屏装置 |
CN114277433A (zh) * | 2021-12-24 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | 应用于汉虹单晶炉的单晶退火产品的生长方法 |
CN114561692A (zh) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | 一种用于改善大直径单晶硅生长固液界面温度梯度的方法 |
-
2001
- 2001-11-01 CN CN 01134359 patent/CN1215203C/zh not_active Expired - Lifetime
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101886289A (zh) * | 2009-05-13 | 2010-11-17 | 硅电子股份公司 | 从熔体中生长硅单晶的方法和装置 |
CN101886289B (zh) * | 2009-05-13 | 2013-09-25 | 硅电子股份公司 | 从熔体中生长硅单晶的方法和装置 |
CN101760773B (zh) * | 2010-02-04 | 2011-11-09 | 西安隆基硅材料股份有限公司 | 一种直拉单晶隔热装料方法及其装置 |
CN101838842A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101838841A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101838846A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101838847A (zh) * | 2010-02-23 | 2010-09-22 | 上海汉虹精密机械有限公司 | 单晶炉装置 |
CN101805922A (zh) * | 2010-04-27 | 2010-08-18 | 王敬 | 热屏和具有其的铸锭炉 |
CN102011181A (zh) * | 2010-12-24 | 2011-04-13 | 温州神硅电子有限公司 | 一种直拉法生长太阳能用8吋硅单晶的热场装置 |
CN102011181B (zh) * | 2010-12-24 | 2012-10-03 | 温州神硅电子有限公司 | 一种直拉法生长太阳能用8吋硅单晶的热场装置 |
CN102162123A (zh) * | 2011-04-01 | 2011-08-24 | 江苏大学 | 双加热器移动热屏式直拉单晶炉 |
CN102162123B (zh) * | 2011-04-01 | 2012-11-07 | 江苏大学 | 双加热器移动热屏式直拉单晶炉 |
CN102758245A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 除氧型单晶炉 |
CN102758258A (zh) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | 单晶炉用伸展式热屏蔽器 |
CN102817071A (zh) * | 2012-06-20 | 2012-12-12 | 合肥景坤新能源有限公司 | 防热辐射直拉多或单晶硅制备工艺 |
CN102817069A (zh) * | 2012-06-20 | 2012-12-12 | 合肥景坤新能源有限公司 | 复合加热防辐射式直拉多或单晶硅制备工艺 |
CN102732949A (zh) * | 2012-06-21 | 2012-10-17 | 芜湖昊阳光能股份有限公司 | 一种石墨热场的导流筒结构 |
CN104619893A (zh) * | 2012-10-03 | 2015-05-13 | 信越半导体株式会社 | 单晶硅生长装置以及单晶硅生长方法 |
US9783912B2 (en) | 2012-10-03 | 2017-10-10 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal growing apparatus and method for growing silicon single crystal |
CN108823636A (zh) * | 2012-10-03 | 2018-11-16 | 信越半导体株式会社 | 单晶硅生长装置以及单晶硅生长方法 |
CN104278320A (zh) * | 2013-07-04 | 2015-01-14 | 有研新材料股份有限公司 | 一种用于测量直拉硅单晶炉中硅熔体液面位置的装置 |
CN103451721A (zh) * | 2013-08-19 | 2013-12-18 | 浙江晶盛机电股份有限公司 | 带水冷热屏的单晶生长炉 |
CN107130295A (zh) * | 2017-04-17 | 2017-09-05 | 宜昌南玻硅材料有限公司 | 一种消除硅芯棒隐裂的装置及方法 |
CN107523869A (zh) * | 2017-09-21 | 2017-12-29 | 浙江晶盛机电股份有限公司 | 一种单晶炉可提升水冷热屏装置 |
CN107523869B (zh) * | 2017-09-21 | 2024-03-05 | 浙江晶盛机电股份有限公司 | 一种单晶炉可提升水冷热屏装置 |
CN114277433A (zh) * | 2021-12-24 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | 应用于汉虹单晶炉的单晶退火产品的生长方法 |
CN114561692A (zh) * | 2022-04-11 | 2022-05-31 | 麦斯克电子材料股份有限公司 | 一种用于改善大直径单晶硅生长固液界面温度梯度的方法 |
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CN1215203C (zh) | 2005-08-17 |
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Correction item: Patentee|Address Correct: You Yan Semi Materials Co., Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road False: GRINM Semiconductor Materials Co., Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Number: 33 Volume: 31 |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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