CN102011181A - 一种直拉法生长太阳能用8吋硅单晶的热场装置 - Google Patents
一种直拉法生长太阳能用8吋硅单晶的热场装置 Download PDFInfo
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- CN102011181A CN102011181A CN 201010603178 CN201010603178A CN102011181A CN 102011181 A CN102011181 A CN 102011181A CN 201010603178 CN201010603178 CN 201010603178 CN 201010603178 A CN201010603178 A CN 201010603178A CN 102011181 A CN102011181 A CN 102011181A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 239000013078 crystal Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 92
- 239000010439 graphite Substances 0.000 claims abstract description 92
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 16
- 238000004321 preservation Methods 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
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- 239000007788 liquid Substances 0.000 abstract description 9
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical compound [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 3
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- 239000007787 solid Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 28
- 229910052786 argon Inorganic materials 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
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- 229910052760 oxygen Inorganic materials 0.000 description 7
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- 238000005336 cracking Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 238000005204 segregation Methods 0.000 description 1
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- 239000011856 silicon-based particle Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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CN201010603178A CN102011181B (zh) | 2010-12-24 | 2010-12-24 | 一种直拉法生长太阳能用8吋硅单晶的热场装置 |
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CN102011181A true CN102011181A (zh) | 2011-04-13 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103194792A (zh) * | 2013-04-16 | 2013-07-10 | 江西豪安能源科技有限公司 | 一种用于制造准单晶籽晶用9英寸直拉单晶硅的生长方法 |
CN107604430A (zh) * | 2016-07-11 | 2018-01-19 | 上海超硅半导体有限公司 | 低氧含量单晶硅生长方法 |
CN110484967A (zh) * | 2019-09-30 | 2019-11-22 | 内蒙古中环光伏材料有限公司 | 一种直拉硅单晶炉平底导流筒 |
WO2020156213A1 (zh) * | 2019-02-01 | 2020-08-06 | 上海新昇半导体科技有限公司 | 一种半导体晶体生长装置 |
CN113818074A (zh) * | 2021-08-24 | 2021-12-21 | 包头美科硅能源有限公司 | 颗粒硅直接用于ccz直拉法制备单晶硅的装置及其方法 |
TWI761956B (zh) * | 2019-10-17 | 2022-04-21 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
CN114574943A (zh) * | 2022-03-03 | 2022-06-03 | 广东高景太阳能科技有限公司 | 一种单晶炉及一种单晶 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417386A (zh) * | 2001-11-01 | 2003-05-14 | 北京有色金属研究总院 | 直拉硅单晶炉热屏方法及热屏蔽器 |
CN1990918A (zh) * | 2005-12-26 | 2007-07-04 | 北京有色金属研究总院 | 一种提高直拉硅单晶炉热场部件寿命的方法及单晶炉 |
CN200974872Y (zh) * | 2006-11-01 | 2007-11-14 | 新疆新能源股份有限公司 | 一种具有保护气控制装置的直拉单晶炉 |
CN201276609Y (zh) * | 2008-09-01 | 2009-07-22 | 宁晋晶兴电子材料有限公司 | 单晶生长加热装置 |
CN201485533U (zh) * | 2009-08-18 | 2010-05-26 | 芜湖升阳光电科技有限公司 | 双向气流的硅晶体生长装置 |
CN101798704A (zh) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | 18英寸热场生长φ8″太阳能级直拉硅单晶工艺 |
CN201933197U (zh) * | 2010-12-24 | 2011-08-17 | 温州神硅电子有限公司 | 一种直拉法生长太阳能用8吋硅单晶的热场装置 |
-
2010
- 2010-12-24 CN CN201010603178A patent/CN102011181B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417386A (zh) * | 2001-11-01 | 2003-05-14 | 北京有色金属研究总院 | 直拉硅单晶炉热屏方法及热屏蔽器 |
CN1990918A (zh) * | 2005-12-26 | 2007-07-04 | 北京有色金属研究总院 | 一种提高直拉硅单晶炉热场部件寿命的方法及单晶炉 |
CN200974872Y (zh) * | 2006-11-01 | 2007-11-14 | 新疆新能源股份有限公司 | 一种具有保护气控制装置的直拉单晶炉 |
CN201276609Y (zh) * | 2008-09-01 | 2009-07-22 | 宁晋晶兴电子材料有限公司 | 单晶生长加热装置 |
CN201485533U (zh) * | 2009-08-18 | 2010-05-26 | 芜湖升阳光电科技有限公司 | 双向气流的硅晶体生长装置 |
CN101798704A (zh) * | 2009-12-31 | 2010-08-11 | 峨嵋半导体材料研究所 | 18英寸热场生长φ8″太阳能级直拉硅单晶工艺 |
CN201933197U (zh) * | 2010-12-24 | 2011-08-17 | 温州神硅电子有限公司 | 一种直拉法生长太阳能用8吋硅单晶的热场装置 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103194792A (zh) * | 2013-04-16 | 2013-07-10 | 江西豪安能源科技有限公司 | 一种用于制造准单晶籽晶用9英寸直拉单晶硅的生长方法 |
CN103194792B (zh) * | 2013-04-16 | 2016-02-03 | 江西豪安能源科技有限公司 | 一种用于制造准单晶籽晶用9英寸直拉单晶硅的生长方法 |
CN107604430A (zh) * | 2016-07-11 | 2018-01-19 | 上海超硅半导体有限公司 | 低氧含量单晶硅生长方法 |
WO2020156213A1 (zh) * | 2019-02-01 | 2020-08-06 | 上海新昇半导体科技有限公司 | 一种半导体晶体生长装置 |
TWI730594B (zh) * | 2019-02-01 | 2021-06-11 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
JP2022518858A (ja) * | 2019-02-01 | 2022-03-16 | ヅィング セミコンダクター コーポレーション | 半導体結晶成長装置 |
JP7295252B2 (ja) | 2019-02-01 | 2023-06-20 | ヅィング セミコンダクター コーポレーション | 半導体結晶成長装置 |
CN110484967A (zh) * | 2019-09-30 | 2019-11-22 | 内蒙古中环光伏材料有限公司 | 一种直拉硅单晶炉平底导流筒 |
TWI761956B (zh) * | 2019-10-17 | 2022-04-21 | 大陸商上海新昇半導體科技有限公司 | 一種半導體晶體生長裝置 |
CN113818074A (zh) * | 2021-08-24 | 2021-12-21 | 包头美科硅能源有限公司 | 颗粒硅直接用于ccz直拉法制备单晶硅的装置及其方法 |
CN114574943A (zh) * | 2022-03-03 | 2022-06-03 | 广东高景太阳能科技有限公司 | 一种单晶炉及一种单晶 |
CN114574943B (zh) * | 2022-03-03 | 2023-09-08 | 高景太阳能股份有限公司 | 一种单晶炉及一种单晶 |
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CN102011181B (zh) | 2012-10-03 |
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Address after: 325800 Zhejiang province Cangnan County Lingxi town industrial park two Ring Road South Patentee after: God silicon new energy Co., Ltd. Address before: 325000 Zhejiang province Cangnan County Lingxi town industrial park two ring road south of Wenzhou silicon Electronics Co. Ltd. Patentee before: Wenzhou Shengui Electronics Co., Ltd. |
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