WO2023124334A1 - 一种用于单晶生长的热场调节装置和方法 - Google Patents

一种用于单晶生长的热场调节装置和方法 Download PDF

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WO2023124334A1
WO2023124334A1 PCT/CN2022/122631 CN2022122631W WO2023124334A1 WO 2023124334 A1 WO2023124334 A1 WO 2023124334A1 CN 2022122631 W CN2022122631 W CN 2022122631W WO 2023124334 A1 WO2023124334 A1 WO 2023124334A1
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thermal field
control unit
molten silicon
single crystal
cylinder
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PCT/CN2022/122631
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English (en)
French (fr)
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潘浩
全铉国
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西安奕斯伟材料科技有限公司
西安奕斯伟硅片技术有限公司
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Application filed by 西安奕斯伟材料科技有限公司, 西安奕斯伟硅片技术有限公司 filed Critical 西安奕斯伟材料科技有限公司
Priority to DE112022000964.0T priority Critical patent/DE112022000964T5/de
Priority to JP2023509541A priority patent/JP2024504533A/ja
Priority to KR1020237004794A priority patent/KR20230028564A/ko
Priority to US18/550,651 priority patent/US20240158952A1/en
Publication of WO2023124334A1 publication Critical patent/WO2023124334A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the embodiments of the present application relate to the field of thermal field technology for crystal pulling, and in particular to a thermal field adjustment device and method for single crystal growth.
  • the methods for manufacturing single crystal silicon rods include zone melting method and Czochralski method, and Czochralski (CZ) method is usually used.
  • the CZ method is to house the polysilicon material in a quartz crucible set in the furnace body of the crystal pulling furnace, melt the polysilicon raw material through a heater to obtain molten silicon, and continue to heat the molten silicon through the heater.
  • the 10mm rod-shaped seed crystal (called seed crystal) is in contact with the molten silicon liquid surface. At the appropriate temperature required by the process, the silicon atoms in the molten silicon will follow the silicon atom arrangement structure of the seed crystal to form a regular pattern on the solid-liquid interface.
  • FIG. 1 shows the schematic diagram of common crystal pulling furnace 10, and this crystal pulling furnace 10 comprises: body of furnace 11, crucible 12, heater 13, heat insulation cylinder 14, guide cylinder 15 and seed crystal pulling The device 16, wherein the heater 13, the heat insulation cylinder 14 and the flow guiding cylinder 15 are all fixed structures.
  • the growth environment In the crystal pulling process, in order to ensure the growth of high-quality single crystal silicon rods S with fewer defects, the growth environment must be strictly controlled, because in the process of growing single crystals by the Czochralski method, the process gas is drawn from the The top of the furnace 10 is charged, in order to ensure that volatile substances can be discharged in time through the guide tube 15 installed above the crucible 12 so that the process gas passes through the guide tube 15 and the inner wall of the furnace body 11 .
  • the single crystal silicon ingot S grows at the solid-liquid interface. Since the molten silicon continuously transforms from liquid to solid and attaches to the seed crystal, as the molten silicon in the crucible 12 continues to decrease, the molten silicon The position of the liquid level is also decreasing. In order to ensure that the liquid level of the molten silicon is always in contact with the crystal, it is necessary to continuously lift the crucible 12 upwards. In order to avoid contact between the draft tube 15 and the liquid level of the molten silicon, it is also necessary to ensure the stability of the gas flow.
  • the relative height of the guide cylinder 15 and the liquid level must be consistent, so the crucible 1 needs to move up synchronously with the crystal lift.
  • the CZ method mainly maintains the stability of the thermal field inside the crystal pulling furnace through the synchronous rising of the crucible and the seed crystal and the rotation of the crucible and the seed crystal. Bringing no small disadvantages.
  • the embodiment of the present application expects to provide a thermal field adjustment device and method for single crystal growth; during the crystal pulling process, the distance between the draft tube and the liquid surface of molten silicon can be kept consistent by adjusting the heat insulation tube, At the same time, independently adjust the heater to cooperate with the movement of the heat insulation cylinder to achieve diversified thermal field control, provide more methods for the crystal pulling process, and improve processing efficiency.
  • an embodiment of the present application provides a thermal field adjustment device for single crystal growth, the thermal field adjustment device is arranged in a crystal pulling furnace, and the thermal field adjustment device includes:
  • the embodiment of the present application provides a thermal field adjustment method for single crystal growth, the thermal field adjustment method includes:
  • the heat-insulating cylinder drives the guide cylinder to the highest position, and after the polysilicon raw material is completely melted into molten silicon, adjust the guide cylinder to a fixed distance from the liquid surface of the molten silicon ;
  • the height position of the crucible is controlled and rotated, and the heat insulating cylinder is driven to drive the guide cylinder to move downwards in the vertical direction, so that the guide cylinder is moved downward during the crystal pulling process.
  • the distance between the bottom and the liquid level of the molten silicon is always consistent.
  • the embodiment of the present application provides a thermal field adjustment device and method for single crystal growth; during the crystal pulling process, the heat-insulating cylinder drives the guide cylinder to move downward in the vertical direction, so that the guide cylinder and the melting
  • the liquid surface distance of silicon remains consistent, avoiding the disadvantages caused by the movement of the crucible.
  • the independently movable heater cooperates with the heat insulation cylinder to realize diversified thermal field control, provide more methods and supports for the adjustment of process parameters, effectively increase the pulling speed and reduce the oxygen concentration, that is, to improve the lifting speed. Pulling speed and reduced oxygen concentration are facilitated, resulting in faster ingot cooling and faster growth.
  • FIG. 1 is a schematic diagram of a crystal pulling furnace in the related art
  • Fig. 2 is a schematic diagram of a crystal pulling furnace provided with a thermal field regulating device for regulating single crystal growth provided by an embodiment of the present application;
  • Fig. 3a is a schematic diagram of the position of the guide cylinder and the heater after charging the crystal pulling furnace shown in Fig. 2;
  • Fig. 3b is a schematic diagram of the position of the guide cylinder and the heater in the chemical material stage of the crystal pulling furnace shown in Fig. 2;
  • FIG. 4 is a schematic flow chart of a thermal field adjustment method for adjusting single crystal growth provided by the embodiment of the present application.
  • FIG. 5 is a schematic flowchart of a method for accelerating the cooling of a single crystal silicon rod in a thermal field adjustment method for adjusting single crystal growth provided by an embodiment of the present application.
  • the crucible 12 rises slowly in the vertical direction to ensure that the distance between the crucible 12 and the single crystal silicon rod S remains within an ideal range. Simultaneously, the slow rise of the crucible 12 is driven by mechanical parts, and because the heater 13 remains motionless, the mechanical parts used to drive the crucible 12 are located in the thermal field of the heater 13 for a long time to passively receive the thermal radiation of the heater 13, As a result, the service life of the crucible 12 is reduced, and due to the principle of thermal expansion and contraction, the movement accuracy of the mechanical parts will also be affected to a certain extent, thereby affecting the stability of the solid-liquid interface of molten silicon in the crucible 12 during the crystal pulling process.
  • this application proposes a thermal field adjustment device for single crystal growth.
  • the heat-insulating cylinder drives the guide cylinder to descend instead of rising the crucible, so that the height and position of the crucible remain unchanged. , thereby increasing the crystal pulling efficiency.
  • this thermal field adjustment device can at least comprise: the heat insulation cylinder 14 that is fixedly installed with the guide tube 15 on the top, the second A control unit T1 and a second control unit T2.
  • the heat insulation cylinder 14 is arranged between the furnace body 11 of the crystal pulling furnace and the heater 13 to prevent the thermal energy of the thermal field in the crystal pulling furnace 100 from radiating outward.
  • the heat insulation cylinder 14 can be made of rigid carbon felt, and a more advanced honeycomb structure can also be used in order to improve the heat insulation and heat preservation effect.
  • heat-insulating cylinder 14 at least comprises side insulation cover 141 and top insulation cover 142, and heat-insulating cylinder 14 can be formed as a whole, also can segmental molding and then assemble again, and the manufacturing cost of segmented and combined heat-insulating cylinder Low and easier to replace for damaged sections.
  • the side insulation cover 141 is arranged in parallel with the heater 13, and is used to surround the heater 13 to prevent the heat of the heater 13 from radiating outward so as to enhance the heating effect of the heater 13 and reduce heat loss.
  • the top heat preservation cover 142 starts from the top of the side heat preservation cover 141 and extends horizontally toward the pulled single crystal silicon rod S until it stops above the crucible 12, and is used to protect the heat loss of the thermal field from the top, thereby improving the crystal pulling thermal field. s efficiency.
  • the guide tube 15 fixedly installed on the top insulation cover 142 is conical with a large upper part and a smaller lower part. It has thermal insulation performance, and is used to ensure that the molten silicon in the crucible 12 has a suitable temperature gradient along the radial direction, and the molten silicon in the drawn single crystal silicon rod S and the crucible 12 has a suitable temperature gradient along the axial direction.
  • the guide tube 15 is configured to reduce the deposition of silicon monoxide (SiO) on the upper part of the crystal pulling furnace 100, thereby ensuring that the drawn single crystal silicon rod S has better quality, and at the same time, it can extend the length of each part in the crystal pulling furnace 100. service life.
  • the guide tubes are combined guide tubes consisting of a thin-walled conical outer graphite tube-felt sandwich-thin-walled conical inner graphite tube.
  • the air guide tube 15 and the top insulation cover 142 can be detachably connected through the hook L.
  • the first control unit T1 is connected to the bottom of the crucible 12. During the process of pulling the ingot S, the first control unit T1 controls the height and position of the crucible 12 through mechanical components, and only rotates relative to the central axis of the crucible 12 .
  • the second control unit T2 is connected to the heat insulation cylinder 14, and is optionally installed at the bottom of the heat insulation cylinder 14 to prevent the second control unit T2 from being subjected to long-term heat radiation in the crystal pulling furnace, which will affect the transmission accuracy of mechanical components.
  • the second control unit T2 can drive the heat insulation cylinder 14 to move up and down in the vertical direction through a transmission mode such as a motor or a ball screw.
  • the heat-insulating cylinder 14 drives the draft cylinder 15 to descend instead of rising the crucible 12, during the crystal pulling process, the height position of the crucible 12 remains unchanged, and the second control unit T2 drives the heat-insulating cylinder 14 to move downward, thereby Drive the guide tube 15 fixedly installed on the top of the heat insulation tube 14 to descend, and the bottom of the guide tube 15 enters the crucible 12, so that the distance between the bottom of the guide tube 15 and the liquid level of the molten silicon is always kept at a distance that can ensure the drawing unit Within a reasonable range of the quality of the crystalline silicon rods, optionally, the distance between the bottom of the draft tube and the liquid surface of the molten silicon is always kept consistent.
  • the thermal field regulating device also includes a liquid level sensor and a processor (not shown) electrically connected.
  • the liquid level sensor can be an imaging device such as a Charge Coupled Device (CCD) camera, a digital camera or a high-definition video camera.
  • CCD Charge Coupled Device
  • the liquid level sensor can obtain real-time information on the liquid level change status of the molten silicon in the crucible, and the processor will obtain the liquid level information from the liquid level sensor.
  • the sensor receives the liquid level change status information of the molten silicon and obtains the liquid level drop height of the molten silicon during the crystal pulling process, and sends a control signal to the second control unit T2, and the second control unit T2 accurately adjusts the heat insulation according to the control signal.
  • the lowering height of the tube 14 is to precisely regulate the distance between the bottom of the draft tube 15 and the liquid level of the molten silicon, so as to ensure that the bottom of the draft tube 15 does not contact the liquid level of the molten silicon.
  • the processor is connected to the second control unit T2 through a wire.
  • the heater 13 is arranged on the periphery of the crucible 12 to radiate heat to the crucible 12 to melt the silicon raw material to obtain molten silicon, and keep the molten silicon at a temperature conducive to pulling single crystal silicon rods S.
  • the heater is fixed and cannot move when straightening the single crystal silicon rod. Therefore, when the single crystal silicon rod is drawn from the molten silicon, the formed single crystal silicon on the top of the molten silicon liquid surface The rod is still within the heat radiation range of the heater, which not only leads to slow heat dissipation of the single crystal silicon rod, reduces the cooling rate, and cannot effectively increase the pulling speed, but also reduces the oxygen concentration of the single crystal silicon rod.
  • the thermal field regulating device further includes a third control unit T3 capable of supporting the heater 13 from below and driving the heater 13 to descend vertically to match the descending of the heat insulation cylinder 14 .
  • the second control unit T2 and the third control unit T3 can drive the heat insulation cylinder 14 and the heater 13 independently, so as to ensure the height position relationship between the heater 13 and the heat insulation cylinder 14, so that it will not lead to deterioration of crystal quality or single crystal problem of low efficiency.
  • the process of pulling the single crystal silicon rod S by the crystal pulling furnace 100 shown in accompanying drawing 3 may include raising the polysilicon raw material in the crucible 12 by raising the position of the draft tube 15; The raw material is heated to melt the polycrystalline silicon raw material to form molten silicon; after the polycrystalline silicon raw material is completely melted, the draft tube 15 is lowered so that the distance between the bottom of the draft tube 15 and the liquid surface of the molten silicon can ensure the quality of the drawn monocrystalline silicon rod; 13 and the heat insulating cylinder 14 to stabilize the temperature of the liquid surface of the molten silicon, and draw the single crystal silicon rod S by means of contacting the seed crystal with the molten silicon.
  • the heat-insulating cylinder drives the guide cylinder to the highest position, and after the polysilicon raw material is completely melted into molten silicon, adjust the guide cylinder to a fixed distance from the liquid surface of the molten silicon;
  • the height position of the crucible is controlled and rotated, and the heat insulating cylinder is driven to drive the draft tube to move downward in the vertical direction, so that the bottom of the draft tube and the liquid of molten silicon will The face distance is always the same.
  • the present application can drive the guide tube to descend instead of the crucible to rise through the way of the heat insulation tube descending, and realizes stably keeping the distance between the bottom of the draft tube and the liquid surface of molten silicon constant.
  • the step of driving the heat insulation cylinder to drive the deflector cylinder to move vertically downward so that the distance between the bottom of the deflector cylinder and the liquid surface of the molten silicon during the crystal pulling process is always consistent includes:
  • the second control unit is controlled according to the change of the liquid level of the molten silicon, so that the distance between the guide cylinder and the liquid level of the molten silicon is always consistent.
  • the thermal field adjustment method includes:
  • the heater While the heat insulation cylinder moves downward, the heater is driven to move downward in the vertical direction, so as to keep the liquid surface temperature of the molten silicon constant and make the heater no longer transfer heat to the drawn single crystal silicon rod;
  • the heat insulation cylinder and the heater move downward in the vertical direction at the same time, which is used to improve the thermal field of the pulled single crystal silicon rod, so that the cooling rate of the drawn single crystal silicon rod is faster.
  • the present application provides a thermal field adjustment device and method for single crystal growth, which replaces the rise of the crucible by the way that the heat insulation cylinder is passed through the guide cylinder and the rise is solved.
  • the problem of swaying crystal silicon rods, and at the same time, the problem of slow heat loss and cooling rate reduction of single crystal silicon rods is solved by driving the heater to move up and down and lowering the heat insulation cylinder in the above process.

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

一种用于单晶生长的热场调节装置和方法，该热场调节装置包括：顶部固定安装有导流筒的隔热筒；第一控制单元和第二控制单元，其中，所述第一控制单元经配置为在拉晶过程中控制坩埚的高度位置不变，所述第二控制单元经配置为在拉晶过程中驱动所述隔热筒沿竖直方向做升降运动，使得所述导流筒的底部与熔融硅的液面的距离始终保持一致。

Description

一种用于单晶生长的热场调节装置和方法
相关申请的交叉引用
本申请主张在2021年12月29日在中国提交的中国专利申请No.202111632073.9的优先权，其全部内容通过引用包含于此。
技术领域
本申请实施例涉及拉晶热场技术领域，尤其涉及一种用于单晶生长的热场调节装置和方法。
背景技术
制造单晶硅棒的方法有区熔法和切克劳斯基法，通常采用切克劳斯基(Czochralski，CZ)法。在氩气保护下，CZ法是将多晶硅料收容在设置于拉晶炉炉体内的石英坩埚里，通过加热器融化多晶硅原料获得熔融硅，并通过加热器持续保温熔融硅，将一根直径只有10mm的棒状晶种(称籽晶)与熔融硅液面接触，在工艺要求合适的温度下，熔融硅中的硅原子会顺着晶种的硅原子排列结构在固液交界面上形成规则的结晶，成为单晶体，将晶种一边旋转一边提拉，熔融硅中的硅原子会在之前形成的单晶体上继续结晶，并延续其规则的原子排列结构，同时加速提拉，生产出目标直径和品质的单晶硅棒。
参见附图1，其示出了常见的拉晶炉10的示意图，该拉晶炉10包括：炉体11、坩埚12、加热器13、隔热筒14、导流筒15以及籽晶提拉装置16，其中加热器13、隔热筒14和导流筒15均属于固定结构。在拉晶过程中，为确保生长出缺陷较少的高品质单晶硅棒S，对其生长环境必须进行严格控制，这是因为在直拉法生长单晶的过程中，工艺气体从拉晶炉10的顶部充入，为了保证挥发物质能够及时排出通过安装在坩埚12上方的导流筒15使得工艺气体经过导流筒15和炉体11的内壁。再通过真空泵从拉拉晶炉10的底部排气口排出。在晶棒S的形成过程中，单晶硅棒S生长在固液交界面处，由于 熔融硅持续从液态转化为固态依附在籽晶上，随着坩埚12中的熔融硅不断减少，熔融硅的液面位置也在不断下降，为了保证熔融硅的液面始终与晶体接触，需要持续向上提升坩埚12，为了避免导流筒15与熔融硅的液面接触，同时也要保证气体流动的稳定，导流筒15与液面的相对高度须要保持一致，因此坩埚1需要随着晶体提升同步上移。同时，CZ法主要通过坩埚和籽晶的同步上升以及坩埚和籽晶的旋转来保持拉晶炉内部热场的稳定性，然而，坩埚上升对拉晶炉内能耗和热场的稳定性都带来的不小的弊端。
发明内容
有鉴于此，本申请实施例期望提供用于单晶生长的热场调节装置和方法；能够在拉晶过程中，通过调节隔热筒以实现导流筒与熔融硅液面的距离保持一致，同时独立调节加热器以配合隔热筒的移动以实现多样化的热场控制，为拉晶工艺提供更多方法，提高加工效率。
本申请实施例的技术方案是这样实现的：
第一方面，本申请实施例提供了一种用于单晶生长的热场调节装置，所述热场调节装置布置在拉晶炉内，所述热场调节装置包括：
顶部固定安装有导流筒的隔热筒；第一控制单元和第二控制单元，其中，所述第一控制单元经配置为在拉晶过程中控制坩埚的高度位置不变，所述第二控制单元经配置为在拉晶过程中驱动所述隔热筒沿竖直方向做升降运动，使得所述导流筒的底部与熔融硅的液面的距离始终保持一致。
第二方面，本申请实施例提供了一种用于单晶生长的热场调节方法，所述热场调节方法包括：
在拉制单晶硅棒开始前，通过隔热筒带动导流筒处于最高位置，待多晶硅原料完全熔化成熔融硅后，调节所述导流筒至与所述熔融硅的液面固定距离处；在拉晶过程中，控制坩埚的高度位置不变并旋转，驱动所述隔热筒以带动所述导流筒沿竖直方向向下移动，以使得在拉晶过程中所述导流筒的底部与所述熔融硅的液面距离始终保持一致。
本申请实施例提供了一种用于单晶生长的热场调节装置和方法；在拉晶过程中，通过隔热筒带动导流筒沿竖直方向向下移动，以使得导流筒与熔融硅的液面距离保持一致，避免了坩埚移动带来的弊端。同时，通过独立移动的加热器配合所述隔热筒实现多样化的热场控制，为工艺参数的调节提供更多的方法和支持，有效提高提拉速度以及降低氧浓度，即，使得提高提拉速度和降低氧浓度变得容易，使得晶棒冷却更快，生长更快。
附图说明
图1为相关技术中拉晶炉的示意图；
图2为具有本申请实施例提供的一种用于调节单晶生长的热场调节装置的拉晶炉的示意图；
图3a为图2示出的拉晶炉装料后导流筒和加热器位置示意图；
图3b为图2示出的拉晶炉化料阶段导流筒和加热器位置示意图；
图4为本申请实施例提供的一种用于调节单晶生长的热场调节方法的流程示意图；
图5为本申请实施例提供的一种用于调节单晶生长的热场调节方法中加速单晶硅棒冷却方法的流程示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。
在拉晶炉内通过CZ法拉制单晶硅的过程中，在坩埚上升的过程中由于保护气体流动的不稳定以及机械传动带来的震动会造成熔融硅液面颤动和单晶硅棒摇晃的问题。摇晃的单晶硅棒和不稳定的熔融硅固液界面会破坏拉晶炉内热场的稳定性，导致晶体缺陷的形成。上述问题不仅造成晶体难以无错位生长，而且对晶体的质量有十分不利的影响。
继续参见附图1，随着拉晶过程的行进，坩埚12在竖直方向上缓慢上升 保证坩埚12与单晶硅棒S之间的距离保持在理想范围之内。同时，坩埚12的缓慢上升是由机械部件驱动的，由于加热器13保持不动，用于驱动坩埚12的机械部件长时间位于加热器13的热场中被动的接收加热器13的热辐射，导致坩埚12的使用寿命降低，并且由于热胀冷缩的原理，该机械部件的运动精度也会受到一定程度的影响，进而影响拉晶过程中坩埚12中熔融硅固液界面的稳定性。
因此，针对上述所面临的技术问题，本申请提出了一种用于单晶生长的热场调节装置，通过隔热筒带动导流筒下降以代替坩埚的上升，使得坩埚的高度位置保持不变，从而提高拉晶效率。参见附图2，其示出了具有该热场调节装置的拉晶炉100的示意性结构，该热场调节装置中至少可以包括：顶部固定安装有导流筒15的隔热筒14、第一控制单元T1和第二控制单元T2。
隔热筒14布置在拉晶炉的炉体11与加热器13之间，能够防止拉晶炉100内热场的热能向外辐射。隔热筒14可采用刚性碳毡制成，为了提高隔热和保温效果还可以采用更为先进的蜂窝结构。参见附图2，隔热筒14其至少包括侧面保温罩141和顶部保温罩142，隔热筒14可以是整体成型，也可以分段成型再进行组合，分段组合式的隔热筒制造成本低，而且针对损坏的部段更加容易更换。侧面保温罩141与加热器13平行布置，用于包围加热器13以防止加热器13的热量向外辐射从而增强加热器13的加热效果减少热量损失。顶部保温罩142从侧面保温罩141的顶部出发沿水平方向朝向拉制的单晶硅棒S延伸，直至坩埚12的上方停止，用于从顶部保护热场的热量损失，从而提高拉晶热场的效率。
固定安装在顶部保温罩142上的导流筒15呈上大下小的锥形，其主要起高温气体导流作用，因此，具有良好的耐热性能和一定的力学性能；导流筒15还具有保温隔热性能，用于保障坩埚12中的熔融硅沿径向、在拉制单晶硅棒S与坩埚12中的熔融硅沿轴向有合适的温度梯度。此外，导流筒15经配置为减少一氧化硅(SiO)在拉晶炉100上部的沉积，从而确保拉制的单晶硅棒S具有较好质量，同时能够延长拉晶炉100中各部件的使用寿命。目前， 导流筒多为由薄壁锥形外石墨筒-毡体夹心-薄壁锥形内石墨筒构成的组合式导流筒。可选地，导流筒15与顶部保温罩142能够通过挂扣L可拆卸连接。
第一控制单元T1连接在坩埚12底部，在拉制晶棒S的过程中第一控制单元T1通过机械部件控制坩埚12的高度位置不变只做相对于坩埚12中心轴线的旋转运动。第二控制单元T2与隔热筒14连接，可选地安装在隔热筒14的底部以避免第二控制单元T2在拉晶炉内受到长时间的热辐射导致机械部件的传动精度受到影响。第二控制单元T2能够通过电机或滚珠丝杠等传动方式驱动隔热筒14沿着竖直方向做升降运动。基于通过隔热筒14带动导流筒15下降以代替坩埚12的上升的构思，在拉晶过程中，坩埚12的高度位置不变，第二控制单元T2驱动隔热筒14向下移动，从而带动固定安装在隔热筒14顶部的导流筒15下降，导流筒15的底部进入坩埚12内，使得导流筒15的底部与熔融硅的液面的距离始终保持在能够保证拉制单晶硅棒质量的合理范围内，可选地，始终保持导流筒的底部与熔融硅的液面的距离一致。
该热场调节装置还包括电连接的液面传感器和处理器(未示出)。液面传感器可以是电荷耦合器件(Charge Coupled Device,CCD)相机、数码相机或高清摄像机等成像装置，通过液面传感器能够实时获得坩埚中熔融硅的液面变化状态信息，处理器将从液面传感器接收到熔融硅的液面变化状态信息处理后获得拉晶过程中熔融硅的液面下降高度，并向第二控制单元T2发出控制信号，第二控制单元T2根据该控制信号准确调节隔热筒14的下降高度以精确地调控导流筒15的底部与熔融硅的液面的距离，用于保障导流筒15的底部不与熔融硅的液面接触。可选地，为了保证处理器信号传输的稳定性，处理器与第二控制单元T2通过线连接。
参见附图2，加热器13布置在坩埚12外周对坩埚12进行热辐射以融化硅原料得到熔融硅，并且保持熔融硅一直处于利于拉制单晶硅棒S的温度。相关技术中加热器是固定的，并不能够在拉直单晶硅棒时移动，因此在从熔融硅中拉制出单晶硅棒的同时，处于熔融硅液面顶部已成型的单晶硅棒仍然处在加热器的热辐射范围内，不仅导致单晶硅棒热量散失缓慢，冷却速率降 低，提拉速度得不到有效地提升，还使得单晶硅棒的氧浓度下降。在通过第二控制单元T2驱动隔热筒14下降的同时，隔热筒14相对于加热器13的位置降低，导致隔热筒14的保温效果降低，无法充分加热熔融硅的液面，继而无法充分降低单晶硅棒S的氧浓度。为了解决该问题，该热场调节装置还包括第三控制单元T3，第三控制单元T3能够从下方支承加热器13并驱动加热器13沿竖直方向下降以配合隔热筒14的下降。通过上述结构，使得拉制的单晶硅棒S处于易冷却的状态，增强了冷却效率，加快了提拉速度。第二控制单元T2与第三控制单元T3能够分别独立驱动隔热筒14和加热器13，从而保证加热器13与隔热筒14的高度位置关系，因此也不会导致结晶质量恶化或单晶化效率低下的问题。
通过附图3所示的拉晶炉100拉制单晶硅棒S的过程，可以包括在坩埚12内升高导流筒15位置装入多晶硅原料；随后通过加热器13对坩埚12内的多晶硅原料进行加热以熔化多晶硅原料形成熔融硅；待多晶硅原料完全融化后降低导流筒15，使得导流筒15底部与熔融硅的液面的距离能够保证拉制单晶硅棒质量；通过加热器13和隔热筒14稳定熔融硅的液面的温度，通过籽晶与熔融硅接触的方式拉制单晶硅棒S。上述过程中，为了始终保持导流筒15底部与熔融硅的液面的距离恒定，同时避免因熔融硅的液面下降而上升坩埚12带来弊端，而使用导流筒15下降的方式实现保持导流筒15底部与熔融硅的液面的距离恒定。参见附图4，其示出了本申请实施例提供的一种用于单晶生长的热场调节方法，该热场调节方法能够应用于附图2所示的拉晶炉，该热场调节方法包括以下步骤：
在拉制单晶硅棒开始前，通过隔热筒带动导流筒处于最高位置，待多晶硅原料完全熔化成熔融硅后，调节所述导流筒至与熔融硅的液面固定距离处；
在拉晶过程中，控制坩埚的高度位置不变并旋转，驱动隔热筒以带动导流筒沿竖直方向向下移动，以使得在拉晶过程中导流筒的底部与熔融硅的液面距离始终保持一致。
通过附图4所示的技术方案，本申请能够通过隔热筒下降的方式带动导 流筒下降代替坩埚上升，实现了稳定地保持导流筒底部与熔融硅的液面的距离恒定。进一步地，驱动隔热筒以带动导流筒沿竖直方向向下移动，以使得在拉晶过程中导流筒的底部与熔融硅的液面距离始终保持一致的这一步骤具体包括：
在拉晶过程中，监控熔融硅的液面高度变化；
依据熔融硅的液面高度变化控制第二控制单元，使得导流筒与熔融硅的液面的距离始终保持一致。
由于在从熔融硅中拉制出单晶硅棒的同时，处于熔融硅液面顶部已成型的单晶硅棒仍然处在加热器的热辐射范围内，不仅导致单晶硅棒热量散失缓慢，冷却速率降低，提拉速度得不到有效地提升，还使得单晶硅棒的氧浓度下降。参见附图5，本申请还提出通过加热器与隔热筒能够同时下降的方式使得拉制的单晶硅棒处于易冷却的状态，该热场调节方法包括：
在隔热筒向下移动的同时，驱动加热器沿竖直方向向下移动，用于保持熔融硅的液面温度恒定并且使得加热器不再向拉制的单晶硅棒传递热量；
隔热筒与加热器同时沿竖直方向向下移动，用于改善拉制单晶硅棒的热场，使得拉制的单晶硅棒的冷却速率更快。
因此本申请提供了一种用于单晶生长的热场调节装置和方法，通过隔热筒带通导流筒下降的方式代替坩埚的上升解决的由坩埚上升引起的熔融硅液面颤动和单晶硅棒摇晃的问题，同时在上述过程中通过驱动加热器上下移动配合隔热筒下降的结构解决了单晶硅棒热量散失缓慢，冷却速率降低的问题。
需要说明的是：本申请实施例所记载的技术方案之间，在不冲突的情况下，可以任意组合。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (10)

  1. 一种用于单晶生长的热场调节装置，所述热场调节装置布置在拉晶炉内，所述热场调节装置包括：
    顶部固定安装有导流筒的隔热筒；
    第一控制单元和第二控制单元，其中，所述第一控制单元经配置为在拉晶过程中控制坩埚的高度位置不变，所述第二控制单元经配置为在拉晶过程中驱动所述隔热筒沿竖直方向做升降运动，使得所述导流筒的底部与熔融硅的液面的距离始终保持一致。
  2. 根据权利要求1所述的热场调节装置，其中，所述隔热筒包括侧面保温罩和顶部保温罩，所述侧面保温罩与加热器平行，所述顶部保温罩布置成从所述侧面保温罩的顶部朝向拉制的单晶硅棒水平延伸而不超过所述坩埚上方，所述导流筒与所述顶部保温罩固定连接。
  3. 根据权利要求1所述的热场调节装置，其中，所述第二控制单元还用于在拉晶过程中驱动所述隔热筒下降。
  4. 根据权利要求2所述的热场调节装置，所述热场调节装置还包括第三控制单元，用于驱动所述加热器沿竖直方向做升降运动。
  5. 根据权利要求4所述的热场调节装置，其中，所述第二控制单元与所述第三控制单元能够分别独立驱动所述隔热筒和所述加热器。
  6. 根据权利要求1所述的热场调节装置，其中，所述第一控制单元还用于驱动所述坩埚绕所述坩埚的中心线旋转。
  7. 根据权利要求1所述的热场调节装置，所述热场调节装置还包括液面传感器和处理器，所述液面传感器经配置为监控所述熔融硅的液面的高度变化，所述处理器经配置为根据所述熔融硅的液面的高度变化向所述控制单元传递控制信号。
  8. 一种用于单晶生长的热场调节方法，所述热场调节方法应用于根据权利要求1-7任一所述的单晶生长的热场调节装置，所述热场调节方法包括：
    在拉制单晶硅棒开始前，通过隔热筒带动导流筒处于最高位置，待多晶硅原料完全熔化成熔融硅后，调节所述导流筒至与所述熔融硅的液面固定距离处；
    在拉晶过程中，控制坩埚的高度位置不变并旋转，驱动所述隔热筒以带动所述导流筒沿竖直方向向下移动，以使得在拉晶过程中所述导流筒的底部与所述熔融硅的液面距离始终保持一致。
  9. 根据权利要求8所述的热场调节方法，其中，所述驱动所述隔热筒以带动所述导流筒沿竖直方向向下移动，以使得在拉晶过程中所述导流筒的底部与所述熔融硅的液面距离始终保持一致，具体包括：
    在拉晶过程中，监控所述熔融硅的液面高度变化；
    依据所述熔融硅的液面高度变化控制第二控制单元，使得所述导流筒与所述熔融硅的液面的距离始终保持一致。
  10. 根据权利要求8所述的热场调节方法，所述热场调节方法还包括：
    在所述隔热筒向下移动的同时，驱动加热器沿竖直方向向下移动，用于保持所述熔融硅的液面温度恒定并且使得所述加热器不再向拉制的单晶硅棒传递热量；
    所述隔热筒与所述加热器同时沿竖直方向向下移动，用于改善拉制单晶硅棒的热场，使得所述拉制的单晶硅棒的冷却速率更快。
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