CN1372324A - 闪烁器面板、制造闪烁器面板方法、辐射探测装置及辐射探测系统 - Google Patents
闪烁器面板、制造闪烁器面板方法、辐射探测装置及辐射探测系统 Download PDFInfo
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- CN1372324A CN1372324A CN02106212A CN02106212A CN1372324A CN 1372324 A CN1372324 A CN 1372324A CN 02106212 A CN02106212 A CN 02106212A CN 02106212 A CN02106212 A CN 02106212A CN 1372324 A CN1372324 A CN 1372324A
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- Prior art keywords
- insulating barrier
- reflector
- scintillator panel
- base member
- scintillator
- Prior art date
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Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2002—Optical details, e.g. reflecting or diffusing layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/008—Measuring neutron radiation using an ionisation chamber filled with a gas, liquid or solid, e.g. frozen liquid, dielectric
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
- G21K2004/12—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens with a support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31721—Of polyimide
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Measurement Of Radiation (AREA)
Abstract
Description
编号 | 第二绝缘层 | 反射层 | 第二绝缘层 | 基体元件 | 评价 |
1 | 不存在 | Al | 不存在 | a-c | × |
2 | 存在(SiO2) | Al | 不存在 | a-c | △ |
3 | 不存在 | Al | 存在(聚酰亚胺) | a-c | ○ |
4 | 存在(聚酰亚胺) | Al | 存在(聚酰亚胺) | a-c | ◎ |
图10A所示的结构 | 实施例6 | 实施例7 | |
腐蚀发生时间 | 1000小时 | 1200小时 | 2000小时 |
Claims (40)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001031164A JP4298177B2 (ja) | 2001-02-07 | 2001-02-07 | シンチレータパネル、放射線検出装置及びシステム |
JP031164/2001 | 2001-02-07 | ||
JP2001272024A JP4878427B2 (ja) | 2001-09-07 | 2001-09-07 | シンチレータパネル、放射線撮像装置及び放射線検出システム |
JP272024/2001 | 2001-09-07 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200510128775 Division CN1776456B (zh) | 2001-02-07 | 2002-02-07 | 闪烁器面板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1372324A true CN1372324A (zh) | 2002-10-02 |
CN1287464C CN1287464C (zh) | 2006-11-29 |
Family
ID=26609066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021062129A Expired - Fee Related CN1287464C (zh) | 2001-02-07 | 2002-02-07 | 闪烁器面板、制造闪烁器面板方法、辐射探测装置及辐射探测系统 |
Country Status (3)
Country | Link |
---|---|
US (5) | US6835936B2 (zh) |
EP (2) | EP1231483B1 (zh) |
CN (1) | CN1287464C (zh) |
Cited By (10)
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CN100438080C (zh) * | 2002-10-23 | 2008-11-26 | Ipl知识产权许可有限公司 | 具有一个或多个导电触点的辐射检测器及其制造方法 |
CN102349114A (zh) * | 2009-03-13 | 2012-02-08 | 浜松光子学株式会社 | 放射线图像转换面板以及其制造方法 |
CN102354696A (zh) * | 2011-07-22 | 2012-02-15 | 上海奕瑞光电子科技有限公司 | X射线探测器 |
CN102565839A (zh) * | 2010-11-02 | 2012-07-11 | 索尼公司 | 辐射检测元件、辐射检测模块及辐射图像诊断设备 |
CN104903745A (zh) * | 2013-01-08 | 2015-09-09 | 斯基恩特-X公司 | 包含多层涂层的x射线闪烁体 |
CN105913894A (zh) * | 2010-12-27 | 2016-08-31 | 富士胶片株式会社 | 放射线图像检测装置以及放射线图像检测装置的制造方法 |
CN106233161A (zh) * | 2014-04-28 | 2016-12-14 | 爱克发医疗保健公司 | 具有铁磁性层的放射照相平板检测器及其产生方法 |
CN109196332A (zh) * | 2016-01-05 | 2019-01-11 | 得克萨斯大学体系董事会 | 用于光学发射检测的装置和方法 |
CN109415561A (zh) * | 2016-07-15 | 2019-03-01 | 沙特基础工业全球技术有限公司 | 聚(醚酰亚胺-硅氧烷)/聚苯二甲酰胺组合物、由其制备的制品及其制造方法 |
CN110753973A (zh) * | 2017-06-15 | 2020-02-04 | 佳能株式会社 | 闪烁体板、放射线成像装置和闪烁体板的制造方法 |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100389980B1 (ko) | 1998-06-18 | 2003-07-12 | 하마마츠 포토닉스 가부시키가이샤 | 신틸레이터 패널, 방사선 이미지 센서 및 그 제조 방법 |
US7034306B2 (en) * | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
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JP5031172B2 (ja) | 2000-09-11 | 2012-09-19 | 浜松ホトニクス株式会社 | シンチレータパネル、放射線イメージセンサおよびそれらの製造方法 |
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US7067079B2 (en) * | 2002-12-03 | 2006-06-27 | Universities Research Association, Inc. | Extruded plastic scintillator including inorganic powders |
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US7618511B2 (en) * | 2003-03-07 | 2009-11-17 | Hamamatsu Photonics K.K. | Scintillator panel and method of manufacturing radiation image sensor |
JP4289913B2 (ja) * | 2003-03-12 | 2009-07-01 | キヤノン株式会社 | 放射線検出装置及びその製造方法 |
US7112802B2 (en) * | 2003-04-11 | 2006-09-26 | Canon Kabushiki Kaisha | Scintillator panel, radiation detecting apparatus, and radiation detection system |
US7054408B2 (en) * | 2003-04-30 | 2006-05-30 | General Electric Company | CT detector array having non pixelated scintillator array |
US20040262535A1 (en) * | 2003-06-27 | 2004-12-30 | Paul Leblans | Binderless storage phosphor screen comprising a support including an amorphous (a-C) carbon layer |
US7164140B2 (en) * | 2004-03-31 | 2007-01-16 | Fuji Photo Film Co., Ltd. | Stimulable phosphor panel and method of producing stimulable phosphor panel |
US7335521B2 (en) * | 2004-07-02 | 2008-02-26 | Oc Oerlikon Balzers Ag | Method for the production of multilayer discs |
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US7214947B2 (en) * | 2005-03-25 | 2007-05-08 | General Electric Company | Detector assembly and method of manufacture |
US7605200B2 (en) * | 2005-03-28 | 2009-10-20 | Ut-Battelle, Llc | Boron loaded scintillator |
US7718986B2 (en) * | 2007-01-25 | 2010-05-18 | Konica Minolta Medical & Graphic, Inc. | Radiation image conversion panel, production method of the same, and X-ray image capturing system |
JP5597354B2 (ja) | 2007-03-27 | 2014-10-01 | 株式会社東芝 | シンチレータパネル及び放射線検出器 |
FR2916575B1 (fr) * | 2007-05-23 | 2009-09-18 | Trixell Sas Soc Par Actions Si | Procede de realisation d'un detecteur de rayonnement |
US7732788B2 (en) * | 2007-10-23 | 2010-06-08 | Hamamatsu Photonics K.K. | Radiation image converting panel, scintillator panel and radiation image sensor |
US7465932B1 (en) | 2007-06-15 | 2008-12-16 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
US7468514B1 (en) * | 2007-06-15 | 2008-12-23 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
KR101352359B1 (ko) * | 2007-07-23 | 2014-01-23 | 삼성디스플레이 주식회사 | 엑스선 검출기 및 그 제조 방법 |
US20090162535A1 (en) * | 2007-12-21 | 2009-06-25 | Jean-Pierre Tahon | Method of forming a phosphor or scintillator material and vapor deposition apparatus used therefor |
DE102008004308A1 (de) * | 2008-01-15 | 2009-07-16 | Biotronik Crm Patent Ag | Durchführung für eine Batterie, Verfahren zur Herstellung derselben und Batterie |
US9075150B2 (en) * | 2009-07-30 | 2015-07-07 | Carestream Health, Inc. | Radiographic detector formed on scintillator |
JP2011137665A (ja) * | 2009-12-26 | 2011-07-14 | Canon Inc | シンチレータパネル及び放射線撮像装置とその製造方法、ならびに放射線撮像システム |
JP6071041B2 (ja) * | 2012-03-30 | 2017-02-01 | 日立金属株式会社 | シンチレータアレイの製造方法及び放射線検出器の製造方法 |
JP6256903B2 (ja) * | 2012-06-05 | 2018-01-10 | モックステック・インコーポレーテッド | 非晶質炭素およびアルミニウムのx線窓 |
JP6041594B2 (ja) * | 2012-09-14 | 2016-12-14 | 浜松ホトニクス株式会社 | シンチレータパネル、及び、放射線検出器 |
JP6245799B2 (ja) * | 2012-11-29 | 2017-12-13 | キヤノン株式会社 | 放射線撮像装置、及び放射線撮像システム |
JP6079284B2 (ja) * | 2013-02-08 | 2017-02-15 | 株式会社島津製作所 | 放射線検出器および放射線検出器の製造方法 |
DE102013217082A1 (de) * | 2013-08-27 | 2015-03-05 | Behr Gmbh & Co. Kg | Gehäuse für eine Belüftungs-, Heizungs- und/oder Klimaanlage |
US20150153487A1 (en) * | 2013-11-29 | 2015-06-04 | Delta Electronics, Inc. | Wavelength-converting device |
JP6487263B2 (ja) * | 2015-04-20 | 2019-03-20 | 浜松ホトニクス株式会社 | 放射線検出器及びその製造方法 |
JP7325295B2 (ja) * | 2019-10-24 | 2023-08-14 | 浜松ホトニクス株式会社 | シンチレータパネル、放射線検出器、シンチレータパネルの製造方法、及び、放射線検出器の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53122356A (en) | 1977-04-01 | 1978-10-25 | Hitachi Ltd | X-ray fluorescent film |
US5381014B1 (en) * | 1993-12-29 | 1997-06-10 | Du Pont | Large area x-ray imager and method of fabrication |
JPH10160898A (ja) | 1996-11-29 | 1998-06-19 | Sony Corp | 蛍光体素子及び放射線像観測装置 |
JP3077941B2 (ja) * | 1997-02-14 | 2000-08-21 | 浜松ホトニクス株式会社 | 放射線検出素子及びその製造方法 |
KR100514546B1 (ko) * | 1997-02-14 | 2005-12-02 | 하마마츠 포토닉스 가부시키가이샤 | 방사선검출소자및그제조방법 |
EP1118879B1 (en) * | 1998-06-18 | 2006-04-26 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
KR100389980B1 (ko) * | 1998-06-18 | 2003-07-12 | 하마마츠 포토닉스 가부시키가이샤 | 신틸레이터 패널, 방사선 이미지 센서 및 그 제조 방법 |
US6160259A (en) * | 1998-10-23 | 2000-12-12 | Adac Laboratories | Channel-specific control of pulse integration in a gamma camera system in response to pulse pile-up |
US6277489B1 (en) * | 1998-12-04 | 2001-08-21 | The Regents Of The University Of California | Support for high performance affinity chromatography and other uses |
DE60024644T2 (de) * | 1999-04-16 | 2006-08-17 | Hamamatsu Photonics K.K., Hamamatsu | Szintillatorpanel und strahlungsbildsensor |
AU2001225485A1 (en) * | 2000-01-11 | 2001-07-24 | Hamamatsu Photonics K.K. | X-ray image sensor |
US6888106B2 (en) * | 2000-04-07 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic heater |
US6835936B2 (en) * | 2001-02-07 | 2004-12-28 | Canon Kabushiki Kaisha | Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system |
DE10120520A1 (de) * | 2001-04-26 | 2002-11-14 | Infineon Technologies Ag | Halbleiterbauelement und Herstellungsverfahren |
CN1276287C (zh) * | 2002-02-20 | 2006-09-20 | 富士胶片株式会社 | 放射线图像形成材料及放射线图像形成方法 |
JP2004241653A (ja) * | 2003-02-06 | 2004-08-26 | Hamamatsu Photonics Kk | X線撮像素子 |
JP4591399B2 (ja) | 2006-04-03 | 2010-12-01 | パナソニック株式会社 | 部品接合方法ならびに部品接合構造 |
-
2002
- 2002-02-04 US US10/061,319 patent/US6835936B2/en not_active Expired - Fee Related
- 2002-02-06 EP EP20020002698 patent/EP1231483B1/en not_active Expired - Lifetime
- 2002-02-06 EP EP20110158677 patent/EP2357495B1/en not_active Expired - Lifetime
- 2002-02-07 CN CNB021062129A patent/CN1287464C/zh not_active Expired - Fee Related
-
2004
- 2004-09-02 US US10/932,068 patent/US7425707B2/en not_active Expired - Fee Related
- 2004-09-02 US US10/932,003 patent/US6911654B2/en not_active Expired - Fee Related
- 2004-09-02 US US10/932,002 patent/US6992296B2/en not_active Expired - Lifetime
-
2005
- 2005-03-24 US US11/087,708 patent/US7170063B2/en not_active Expired - Fee Related
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US20050023494A1 (en) | 2005-02-03 |
US7170063B2 (en) | 2007-01-30 |
EP2357495B1 (en) | 2013-07-24 |
EP1231483A3 (en) | 2006-08-30 |
US7425707B2 (en) | 2008-09-16 |
EP1231483A2 (en) | 2002-08-14 |
US20050205797A1 (en) | 2005-09-22 |
US6911654B2 (en) | 2005-06-28 |
US20020162965A1 (en) | 2002-11-07 |
US6835936B2 (en) | 2004-12-28 |
CN1287464C (zh) | 2006-11-29 |
US20050023493A1 (en) | 2005-02-03 |
EP2357495A1 (en) | 2011-08-17 |
EP1231483B1 (en) | 2013-01-23 |
US20050026004A1 (en) | 2005-02-03 |
US6992296B2 (en) | 2006-01-31 |
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